US5077593A - Dark current-free multiquantum well superlattice infrared detector - Google Patents
Dark current-free multiquantum well superlattice infrared detector Download PDFInfo
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- US5077593A US5077593A US07/457,613 US45761389A US5077593A US 5077593 A US5077593 A US 5077593A US 45761389 A US45761389 A US 45761389A US 5077593 A US5077593 A US 5077593A
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- 239000002800 charge carrier Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 11
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
Definitions
- the present invention relates generally to photodetectors fabricated from semiconductor materials. More specifically, the present invention relates to a multiquantum well photodetector having a reduced dark current.
- a superlattice is typically fabricated using molecular beam epitaxy or metalorganic chemical vapor deposition to form a multilayered heterojunction structure. The thickness of each active layer is reduced to the order of carrier de Broglie wavelength such that two dimensional quantization occurs, resulting in a series of discrete energy levels.
- a typical superlattice photodetector includes a plurality of alternating gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) layers. Each period of the superlattice comprises one GaAs layer and one AlGaAs layer.
- the GaAs layers are heavily doped n-type and comprise the quantum well layers which are interposed between AlGaAs barrier layers.
- the conduction band edge of the barrier layer material is above that of the conduction band edge of the quantum well layers, forming periodic quantum wells.
- the height of the energy barrier of the barrier layers can be varied by changing the ratio of aluminum-to-gallium to confine electrons at a selected energy level in the quantum wells.
- superlattice devices In order to reduce thermionic emission of electrons from the quantum wells, superlattice devices of this nature are operated at temperatures based on a selected detection wavelength.
- An electrical bias applied perpendicular to the alternating barrier and quantum well layers in the absence of illumination produces a low current known as the dark current which results from quantum mechanical tunneling of electrons through the potential barriers of the barrier layers.
- the superlattice when the superlattice is illuminated by photons of the appropriate energy, electrons are excited out of the quantum wells in response to the radiation by transitions between energy levels. These photoexcited electrons increase the conductivity of the device.
- these devices are in effect photoconductors and that a signal can be derived which is representative of the detected radiation.
- One such device is disclosed in European Patent No. 275-150-A, wherein a photodetector having a superlattice defining multiple quantum wells is provided for infrared radiation detection.
- electrons in the quantum wells have two bound states.
- Incident infrared radiation produces intersub-band absorption between the ground state and the excited state.
- the applied bias, the height of the potential energy barriers of the barrier layers, and the spacing of the energy states in the quantum well layers are configured such that electrons in the excited state have a high tunneling probability.
- a signal current results from tunneling of the photoexcited electrons through the potential barriers of the barrier layers.
- energy levels of neighboring wells are matched to optimize tunneling of photoexcited electrons while inhibiting dark current tunneling.
- the detector comprises a 50 period GaAs/AlGaAs superlattice positioned between contact layers grown on a semi-insulating GaAs substrate.
- One advantage of these devices is the ability to control peak absorption wavelength by varying quantum well layer dimensions and barrier layer composition and thickness.
- the quantum wells contain a single bound state. By photoexciting the quantum well electrons into the continuum while the superlattice is appropriately biased, electrons travel above the superlattice potential barriers toward the collector, rather than through the barriers by quantum mechanical tunneling. Assuming an adequate mean-free path, the photoexcited carriers produce a signal representative of photon absorption in the quantum well layers.
- the solution proposed by others to reduce dark current in these devices is to increase the thickness of each of the barrier layers of the superlattice. Since photoconduction is not achieved through tunneling, thin barriers are not necessary from the standpoint of optimizing tunneling current. More specifically, in the aforementioned photodetector described by Levine and others, barrier layers of AlGaAs 300 angstroms in thickness and GaAs quantum well layers 40 angstroms in thickness were arranged to form a 50 period superlattice. By increasing the barrier width from 140 to 300 angstroms and the barrier height from 160 mV to 250 mV, the dark current was reduced by several orders of magnitude. This reduction in dark current resulted from a decrease in electron tunneling through the thick barrier layers. However, this method of decreasing the dark current suffers from several serious limitations.
- Photodetector performance is based primarily on the quantum efficiency of the device, the response time and the sensitivity of the device. Although increasing the thickness of the superlattice barrier layers reduces dark current, it also limits the quantum efficiency of the detector. It will be appreciated that the mean-free path of electrons through the superlattice in a selected material system is essentially established by the bias voltage. Thus, if barrier layer thicknesses are substantially increased, as suggested, to significantly reduce the dark current, the periodicity number of the superlattice must be reduced to prevent recombination of the photoexcited electrons in the superlattice.
- photoexcited charge carriers in order for photoexcited charge carriers to be detected, they must have a mean-free path which is at least equal to the distance through the superlattice. If the mean-free path is less than this minimum distance, the photoexcited electrons will fall in the ground state of quantum wells in the superlattice or be trapped in the blocking or barrier layers prior to reaching the ohmic contact. Thus, either the number of superlattice layers must be decreased, resulting in fewer quantum well layers which reduces quantum efficiency, or the applied bias must be increased which in turn increases the tunneling current.
- tunneling is prevented by a single, thick blocking layer positioned between the superlattice and the positively biased ohmic contact with respect to the other ohmic contact.
- a semiconductor device which includes two superlattices separated by a centrally disposed barrier layer which has a lower transmission coefficient than the barrier layers of the superlattices. It is stated that the central barrier layer is thicker than the barrier layers of the superlattices.
- the semiconductor device exhibits negative differential conductance due to voltage dependent discontinuities between energy minibands of the two superlattices.
- the device is a tunneling current device and is not a photodetector.
- Another object of the present invention is to provide a low dark current multiquantum well photodetector in which tunneling current is reduced or eliminated by means other than by increasing superlattice barrier layer thicknesses.
- Still another object of the present invention is to provide a low dark current multiquantum well photodetector for use in infrared detector focal plane arrays.
- the present invention provides in one aspect a photodetector which includes a plurality of quantum well layers and barrier layers arranged to form a superlattice.
- a blocking layer of barrier material is provided between the superlattice and the collector ohmic contact.
- the blocking layer has a predetermined thickness which substantially eliminates the tunneling current component of the photodetector dark current.
- the blocking layer thickness is substantially greater than the thickness of the individual barrier layers of the superlattice.
- the blocking layer of the present invention is preferably placed at the end of one multiquantum well superlattice structure, with the blocking layer and superlattice positioned between contact layers.
- One of the contact layers is in turn disposed on a semi-insulating semiconductor substrate which serves as an optical window to infrared radiation.
- an electrical bias is applied to the photodetector across the contact layers perpendicular to the superlattice layers. Photons of the appropriate wavelength incident on the surface of the substrate are absorbed in the quantum well layers of the superlattice, causing photoexcitation of electrons confined in the quantum wells.
- FIG. 1 is a schematic representation of a photodetector in accordance with the present invention
- FIG. 2 is an example of a simplified partial energy band diagram for the detector illustrated in FIG. 1 with no applied bias
- FIG. 3 is a schematic representation of the photodetector of the present invention in another embodiment.
- FIG. 4 is a current-voltage (I-V) curve plot of photovoltaic IR detection for a GaAs/AlGaAs MQW infrared detector.
- photodetector 10 comprising substrate 12 on which contact layer 14 is disposed.
- substrate 12 on which contact layer 14 is disposed.
- the semiconductor material from which substrate 12 is fabricated permits travel therethrough of incident radiation of the wavelength to be detected.
- the preferred materials for use in fabricating photoconductor 10 are gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs), most preferably Al x Ga 1-x As where x is between 0.2 to 0.3.
- substrate 12 preferably comprises semi-insulating GaAs.
- Contact layer 14 is heavily doped n-type GaAs such that the Fermi level lies within the conduction band of the material.
- the various semiconductor layers of photodetector 10 are epitaxial layers which are preferably formed by either molecular beam epitaxy or metal organic chemical vapor deposition.
- Superlattice 16 is shown disposed on contact layer 14 and comprises multiple heterostructure layers of semiconductor materials having alternating conductivities. More specifically, superlattice 16 includes a plurality of quantum well layers 18 interleaved between a plurality of barrier layers 20.
- FIG. 2 of the drawings which is a partial energy diagram of the conduction band edge of the various layers of photodetector 10, the conduction band edge of the barrier layers, i.e., the height of the potential energy barriers, is above the conduction band edge of the alternating quantum well layers.
- each quantum well layer is sufficiently small, preferably from about 20 to about 60 angstroms, and most preferably about 40 angstroms, such that quantum effects are significant.
- the thickness of each barrier layer 20 is preferably from 40 to about 300 angstroms, and most preferably about 140 angstroms.
- the period of superlattice 16 is preferably about 180 angstroms in thickness.
- quantum well layers 18 In order to maximize the quantum efficiency of photodetector 10, it is desirable to provide as many quantum well layers 18 as possible. As will be explained more fully, photon absorption occurs in the quantum well layers and thus quantum efficiency is a function of quantum well layer number. However, the distance between last quantum well layer 18 and contact layer 24 ideally should not exceed the mean-free path of photoexcited electrons at the device operation voltage. As stated, in order for an excited electron to contribute to the signal it must reach the contact layer 24. Although only several periods are shown, it is most preferred that superlattice 16 comprise a 50 period structure. GaAs quantum well layers 18 are heavily doped n-type with a donor impurity such as Ge, S, Si, Sn, Te or Se. A particularly preferred dopant is Si at a concentration of about 1 ⁇ 10 18 to about 5 ⁇ 10 18 cm -3 , and most preferably about 2 ⁇ 10 18 cm -3 .
- the potential barrier height of barrier layers 20 is about 160 meV above that of the quantum wells. It will be appreciated that the barrier width is small enough that there is a finite tunneling probability. A single bound state of electrons in the quantum wells is provided above the conduction band of the wells, but below the potential barriers of the barrier layers. In order to provide a periodic energy profile, the compositional and dimensional characteristics of the semiconductor layers which make up superlattice 16 are closely controlled and the superlattice periods are symmetrical.
- the energy gap between the bound state and the excited state of electrons in the quantum wells is 100 meV for absorption of long wavelength infrared radiation with peak detection of about 12 ⁇ m.
- the first excited state of electrons in the quantum wells lies above the conduction band edge of the barrier layers.
- GaAs/AlGaAs superlattice is particularly preferred in the present invention, other materials are also suitable. For example, it may be desirable to use materials such as InGaAs/InAlAs on InP, SiGe on Si, and HgCdTe.
- superlattices fabricated from III-V, IV-IV and II-VI semiconductor materials are suitable for use in the present invention. Lattice match and thermal coefficient considerations, impurity concentrations, and fabrication techniques for use in the present invention will be understood by those of skill in the art. It is also to be understood that although the present invention is particularly suited for the detection of long wavelength and low background infrared radiation, photodetector 10 may be useful in the detection of shorter wavelength radiation. Further, it is contemplated that photodetector 10 may be useful in particle detection.
- blocking layer 22 is seen interposed between outermost quantum well layer 18a of superlattice 16 and contact layer 24.
- blocking layer 22 is positioned at the opposite end of superlattice 16.
- blocking layer 22 provides the means by which dark current is significantly reduced in photodetector 10.
- contact layer 14 is heavily doped N-type and is shown in epitaxial contact with barrier layer 20d.
- Blocking layer 22 is formed of a material which is reasonably well lattice-matched with adjacent quantum well layer 18a of superlattice 16. Most preferably, blocking layer 22 is formed of the same material from which barrier layers 18 are formed, intrinsic Al x Ga 1-x As in this particular embodiment. It is important that the conduction band edge of blocking layer 22 is lower than the miniband of excited states in the continuum such that electrons in the continuum can move through blocking layer 22 above its potential barrier as shown in FIG. 2. In the preferred embodiment, the conduction band edge of blocking layer 22 is at the same energy level as that of barrier layers 18.
- a second blocking layer at the opposite end of the superlattice 16 may be provided such that the bias can be reversed while still blocking the tunneling current.
- blocking layer 22 is substantially thicker than each barrier layer 20.
- Blocking layer 22 should be at least 100 percent thicker than superlattice barrier layer 20. In this particular embodiment, it is preferred that blocking layer 22 have a thickness of approximately 500 to 2000 angstroms and most preferably approximately 800 angstroms.
- blocking layer 22 comprises one wall of the last quantum well and can thus be thought of as part of the superlattice, or alternatively, as being positioned adjacent the end of superlattice 16. In any event, it is the placement of blocking layer 22 in the path of electron flow from quantum well layers 18 to terminal 28 which reduces dark current in the present invention.
- blocking layer 22 is included in the total thickness or distance between quantum well layer 18b and contact layer 24 with respect to mean-free path considerations, by blocking the tunneling current with a single blocking layer 22, more efficient blocking of the tunneling current is achieved in less space than where tunneling is merely reduced by increasing the thickness of each barrier layer 20 as proposed in the prior art.
- an appropriate detector bias voltage is applied at terminal 26 by voltage source 30 to establish an electric field transverse or perpendicular to superlattice 16 in the direction of blocking layer 22.
- Terminal 28 is connected to a transimpedance amplifier 34, and its potential at terminal 28 is virtually 0 volt.
- the voltage at the output of the transimpedance amplifier is measured by voltmeter 32.
- the output voltage is proportional to the current generated by the detector.
- the transimpedance amplifier 34 serves to amplify the current generated by the detector and provide the voltage at the output.
- photoconductor 10 is preferably operated at a sufficiently low temperature.
- the tunneling component of the dark current which would otherwise reduce the signal-to-noise ratio is effectively eliminated by the presence of blocking layer 22. More specifically, electrons which tunnel through the potential barriers of barrier layers 20, cannot tunnel through blocking layer 22 due to the width of its potential barrier. Since tunneling electrons do not reach contact layer 24, they do not contribute to the dark current. In this fashion, the tunneling current is effectively eliminated.
- the device shown in FIG. 3 functions in essentially the same manner; however, the bias is reversed such that photoexcited electrons are collected at contact layer 14, which is the standard approach.
- the present invention provides a multiquantum well superlattice photodetector which blocks tunneling current in a manner which does not require any increase in the thickness of the individual barriers of the superlattice.
- quantum efficiency can be optimized by providing large period superlattice structures for maximum photon absorption. Due to the reduction of device dark current the signal-to-noise ratio is markedly improved.
- the present invention facilitates the design of photodetectors having large dynamic ranges and sensitivity.
- the decreased power dissipation of photodetector 10 also permits focal plane arrays to be constructed which do not produce excessive heat.
Abstract
Description
Claims (28)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US07/457,613 US5077593A (en) | 1989-12-27 | 1989-12-27 | Dark current-free multiquantum well superlattice infrared detector |
US07/792,502 US5352904A (en) | 1989-12-27 | 1991-11-21 | Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency |
US09/819,186 US6534783B1 (en) | 1989-12-27 | 1993-11-15 | Stacked multiple quantum well superlattice infrared detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US07/457,613 US5077593A (en) | 1989-12-27 | 1989-12-27 | Dark current-free multiquantum well superlattice infrared detector |
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US79251191A Continuation | 1989-12-27 | 1991-11-12 |
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US07/792,502 Continuation-In-Part US5352904A (en) | 1989-12-27 | 1991-11-21 | Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency |
US09/819,186 Continuation-In-Part US6534783B1 (en) | 1989-12-27 | 1993-11-15 | Stacked multiple quantum well superlattice infrared detector |
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US07/457,613 Expired - Lifetime US5077593A (en) | 1989-12-27 | 1989-12-27 | Dark current-free multiquantum well superlattice infrared detector |
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Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0509247A2 (en) * | 1991-03-15 | 1992-10-21 | Fujitsu Limited | Infrared detector |
US5326984A (en) * | 1991-07-05 | 1994-07-05 | Thomson-Csf | Electromagnetic wave detector |
US5352904A (en) * | 1989-12-27 | 1994-10-04 | Hughes Aircraft Company | Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency |
US5399880A (en) * | 1993-08-10 | 1995-03-21 | At&T Corp. | Phototransistor with quantum well base structure |
US5416338A (en) * | 1992-02-29 | 1995-05-16 | Nippondenso Co., Ltd. | Semiconductor device with quantum well resonance states |
US5510627A (en) * | 1994-06-29 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Infrared-to-visible converter |
US5539206A (en) * | 1995-04-20 | 1996-07-23 | Loral Vought Systems Corporation | Enhanced quantum well infrared photodetector |
US5646421A (en) * | 1993-07-16 | 1997-07-08 | Liu; Hui Chun | Multicolor voltage tunable quantum well intersubband infrared photodetector |
US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
WO1998009141A2 (en) * | 1996-08-27 | 1998-03-05 | California Institute Of Technology | Infrared radiation-detecting device |
US5844253A (en) * | 1996-11-22 | 1998-12-01 | Electronics And Telecommunications Research Institute | High speed semiconductor phototransistor |
WO1999017341A2 (en) * | 1997-09-27 | 1999-04-08 | National University Of Singapore | Dual band infrared detector using step multiquantum wells with superlattice barriers |
US5977557A (en) * | 1997-12-23 | 1999-11-02 | Electronics & Telecommunications Research Institute | Hot-electron photo transistor |
US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
US6277297B1 (en) * | 1991-08-22 | 2001-08-21 | Raytheon Company | Optical window composition |
US6420728B1 (en) * | 2000-03-23 | 2002-07-16 | Manijeh Razeghi | Multi-spectral quantum well infrared photodetectors |
US20020153487A1 (en) * | 2001-04-18 | 2002-10-24 | Hui Chun Liu | Room temperature quantum well infrared detector |
US6534783B1 (en) * | 1989-12-27 | 2003-03-18 | Raytheon Company | Stacked multiple quantum well superlattice infrared detector |
JP3538143B2 (en) | 1997-11-26 | 2004-06-14 | カリフォルニア・インスティテュート・オブ・テクノロジー | Broadband quantum well infrared photodetector |
US20060108528A1 (en) * | 2004-11-24 | 2006-05-25 | Chang-Hua Qiu | Ifrared detector composed of group III-V nitrides |
US20080025360A1 (en) * | 2006-07-27 | 2008-01-31 | Christoph Eichler | Semiconductor layer structure with superlattice |
US20080116476A1 (en) * | 2006-11-22 | 2008-05-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device |
CN100392870C (en) * | 2005-09-23 | 2008-06-04 | 中国科学院上海技术物理研究所 | Self-amplifying infrared detector |
CN100541832C (en) * | 2007-11-30 | 2009-09-16 | 中国科学院上海技术物理研究所 | Optical voltage multi-quanta trap infrared detector |
US20110133088A1 (en) * | 2009-12-03 | 2011-06-09 | Technion Research & Development Foundation Ltd. | Method and system for detecting light and designing a light detector |
US20110210313A1 (en) * | 2009-08-01 | 2011-09-01 | Sumitomo Electric Industries, Ltd. | Semiconductor device and manufacturing method thereof |
US8729528B2 (en) | 2009-09-29 | 2014-05-20 | Research Triangle Institute | Quantum dot-fullerene junction optoelectronic devices |
US20140191196A1 (en) * | 2013-01-04 | 2014-07-10 | Gwangju Institute Of Science And Technology | Optical device including three coupled quantum well structure |
US9054262B2 (en) | 2009-09-29 | 2015-06-09 | Research Triangle Institute | Integrated optical upconversion devices and related methods |
US9349970B2 (en) | 2009-09-29 | 2016-05-24 | Research Triangle Institute | Quantum dot-fullerene junction based photodetectors |
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Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534783B1 (en) * | 1989-12-27 | 2003-03-18 | Raytheon Company | Stacked multiple quantum well superlattice infrared detector |
US5352904A (en) * | 1989-12-27 | 1994-10-04 | Hughes Aircraft Company | Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency |
EP0509247A3 (en) * | 1991-03-15 | 1993-01-13 | Fujitsu Limited | Infrared detector |
EP0509247A2 (en) * | 1991-03-15 | 1992-10-21 | Fujitsu Limited | Infrared detector |
US5326984A (en) * | 1991-07-05 | 1994-07-05 | Thomson-Csf | Electromagnetic wave detector |
US6277297B1 (en) * | 1991-08-22 | 2001-08-21 | Raytheon Company | Optical window composition |
US6287478B1 (en) * | 1991-08-22 | 2001-09-11 | Raytheon Company | Optical window |
US5416338A (en) * | 1992-02-29 | 1995-05-16 | Nippondenso Co., Ltd. | Semiconductor device with quantum well resonance states |
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