CN100392870C - Self-amplifying infrared detector - Google Patents
Self-amplifying infrared detector Download PDFInfo
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- CN100392870C CN100392870C CNB2005100299828A CN200510029982A CN100392870C CN 100392870 C CN100392870 C CN 100392870C CN B2005100299828 A CNB2005100299828 A CN B2005100299828A CN 200510029982 A CN200510029982 A CN 200510029982A CN 100392870 C CN100392870 C CN 100392870C
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Abstract
The present invention discloses a self-amplifying infrared detector, which is composed of a self amplifying section for detecting signals, and the self amplifying section is composed of an InGaAs/AlGaAs multi-quantum well infrared detector, an AlAs/GaAs/AlAs resonant tunneling diode and InAs quantum dots. The present invention has the advantage of skillfully adopting a quantum confinement effect of the quantum dots and an electronic tunneling effect of the resonant tunneling diode, and the quantum dots and the resonant tunneling diode are effectively combined as a self amplifying unit of the infrared quantum well detector. The self amplifying unit and the infrared quantum well detector can be integrated on the same ship, and the present invention is a system with completely integrated amplification and detection.
Description
Technical field
The present invention relates to photodetector, specifically be meant a kind of highly sensitive self-amplifying infrared detector the effective combination of resonance tunnel-through diode (RTD), quantum dot (QD) and P type doped quantum well (QW).
Background technology
All Detection Techniques all are more to obtaining, and the direction of target information develops more clearly.If thermal imaging system can obtain the target information than high s/n ratio under more weak radiation, just can improve Effect on Detecting to target, can be applied in many infrared technique applications.Its main deficiency of present quantum trap infrared detector has: it is little and quantum efficiency that cause is low that material aligns the incident radiation absorption coefficient of light, and carrier lifetime is short and responsiveness that cause is little and dark current is big etc.
Have now found that quantum-dot structure in the quantum dot produces three-dimensional quantum limitation effect to wherein charge carrier, caused the density of states feature of division and the high separation of energy level, thereby made semiconductor-quantum-point have very wide application prospect at aspects such as single-electron device, memory and various photoelectric devices.The charge carrier that is limited in the quantum dot can influence the tunnelling process of electronics by resonance tunnel-through diode by near the electrostatic potential the resonance tunnel-through diode potential barrier that influences the neighbour.Effective combination of resonance tunnel-through diode and quantum dot is expected to realize the detection of single quantum electric charge, can realize efficient, the low noise detection of a small amount of photon to the regulation and control of electronics in the quantum dot in conjunction with the photohole of p type doped quantum well.Thereby make device that bigger detectivity be arranged, little dark current, high quantum efficiency.
Summary of the invention
Purpose of the present invention is exactly to propose a kind of electron tunneling process of utilizing quantum dot as quantum switch control resonance tunnel-through diode, detection to the intersubband transitions light absorption effect in the quantum well is amplified, realize the amplification certainly of device detectivity in certain infrared band, reach a small amount of photon detectivity of device.
For achieving the above object, technical scheme of the present invention is: utilize the molecular beam epitaxial growth technology with InGaAs/AlGaAs multiple quantum well infrared detector and AlAs GaAs being integrated on the same substrate of the detectable signal formed of AlAs resonance tunnel-through diode and InAs quantum dot from amplifier section.Be specially:
By on substrate 1, being arranged in order growth n
+-GaAs emission electrode layer 2, intrinsic GaAs wall 3, by the AlAs barrier layer the GaAs potential well layer AlAs the barrier layer resonance tunnel-through diode 4, intrinsic GaAs wall 5, self-organizing InAs quantum dot layer 6, the p type In that form
xGa
1-xAs/Al
yGa
1-yAs Multiple Quantum Well 7, intrinsic GaAs wall 8, n
+-GaAs collector layer 9 is formed.
The thickness of said intrinsic GaAs wall 3 is 18～22nm; The thickness of intrinsic GaAs wall 5 is 1.5～2.5nm; The thickness of intrinsic GaAs wall 8 is 300～320nm.
Each layer of said above-mentioned resonance tunnel-through diode 4 is nanoscale thin layer superlattice structure.Each layer thickness is identical, is 8～12nm.
The averag density of said self-organizing InAs quantum dot layer is 80-120/μ m
2
Said p type In
xGa
1-xAs/Al
yGa
1-yAs Multiple Quantum Well 7 is by alternating growth 30 or 50 cycle Al
yGa
1-yAs barrier layer/p type doping In
xGa
1-xThe As quantum well layer is formed.In
xGa
1-xThe thickness of As quantum well, In component x value, Al
yGa
1-yThe value of As barrier height, A1 component y value is relevant with the infrared wavelength that will survey.
Of the present inventionly comprise from amplifier section: AlAs GaAs AlAs resonance tunnel-through diode and InAs quantum dot.Discrete energy levels in the InAs quantum dot is mainly occupied by the electron institute, thus the built-in electromotive force of quantum dot to AlAs GaAs the AlAs resonance tunnel-through diode bias is arranged.The electronics that comes self-emission electrode can pass the AlAs potential barrier by tunnel effect and enter the InAs quantum dot under the positive bias voltage effect, thereby has increased the electron energy level that InAs quantum dot static potential energy has increased AlAs potential barrier surface, and tunnelling current is ended.This critical condition is the operating state of device.Under such operating state, the photohole that p type doping InGaAs/AlGaAs quantum well absorbs the infrared radiation generation moves to the emission electrode direction under bias effect, captured by the InAs quantum dot, and reduced InAs quantum dot static potential energy with electron recombination the electron energy level on AlAs potential barrier surface is reduced, be coupled with the resonance tunnel-through diode electron energy level, make a large amount of emitter electronics can cross two AlAs barrier structures by tunnelling again and form the effective amplification that infrared radiation is absorbed the photo-generated carrier that produces.
The course of work of device of the present invention:
When at n
+One end of-GaAs emission electrode and and n
+When adding bias voltage between the-GaAs collector electrode, the electronics that comes self-emission electrode enters the InAs quantum dot by the AlAs potential barrier that tunnel effect can be passed AlAs GaAs AlAs diode under the positive bias voltage effect.Whenever an electronics enters the InAs quantum dot static potential energy of this quantum dot is increased, can cause coulomb blockage in this case, promptly its can be to second the electron production barrier effect that enters this quantum dot that comes subsequently in case a certain electron tunneling enters quantum dot, tunnelling current is ended, just allow other electronics to enter quantum dot after having only this electronics to disappear.Adopt the p type to mix in the InGaAs/AlGaAs of this system quantum well, there is the hole to exist in the ground state of valence band, absorb infrared light, the hole is energized into continuous state from ground state, become photohole, simultaneously because at quantum well two ends applying bias voltage, photohole moves to the emission electrode direction under this extra electric field effect, captured by the InAs quantum dot, be quantum dot charging, and with the InAs quantum dot in electron recombination, i.e. quantum dot discharge, reduced electron amount in the quantum dot, reduced electronic potential, the electron energy level on AlAs potential barrier surface has been reduced, and be coupled with the resonance tunnel-through diode electron energy level, make electron tunneling cross two AlAs potential barriers, cause tunnelling current to increase.Whole process is to be controlled the tunnelling electronics of process AlAs GaAs AlAs diode under applying bias as quantum switch by the InAs quantum dot, because the energy level of quantum dot is quantized, so its photohole number of capturing from the InGaAs/AlGaAs quantum well also is quantized, and then by controlling the motion of single electron in the quantum dot, observe the single electron tunnel effect, thereby finish the detection of single light induced electron, realized the amplification certainly of infrared acquisition sensitivity.
Following good effect of the present invention and advantage
1, amplifying highly sensitive Infrared Detectors certainly compares to traditional Infrared Detectors and bigger detectivity is arranged, little dark current, high quantum efficiency.
2, infrared detecting unit of the present invention adopts p type In
xGa
1-xAs/Al
yGa
1-yAs Multiple Quantum Well, the quantum well valence band heavy hole of this structure absorb photon and produce intersubband transition, do not need grating coupler so allow the normal incidence radiation, thereby have simplified the preparation technology of detector.
3, the present invention has adopted the tunnel effect of the quantum limitation effect and the resonance tunnel-through diode electronics of quantum dot dexterously, with the two effectively in conjunction with as the infrared quantum well detector from amplifying unit, and can be integrated on the same chip with the infrared quantum trap, be a kind of system fully-integrated with detection of amplifying.
4, the integrated design of infrared quantum trap of the present invention and resonance tunnel-through diode and quantum dot helps the material growth, and simplied system structure is convenient to be applied to help reduced volume simultaneously in the technology of focal plane, reduces cost, and is convenient to enlarge its range of application.
Description of drawings
Fig. 1 is the structural representation that amplifies highly sensitive Infrared Detectors certainly of the present invention
Fig. 2 is for being with schematic diagram from amplifying highly sensitive Infrared Detectors
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail:
See Fig. 1, utilize the molecular beam epitaxial growth technology on substrate 1, to be arranged in order growth n
+-GaAs emission electrode layer 2, intrinsic GaAs wall 3, by the AlAs potential barrier the GaAs potential well AlAs the potential barrier resonance tunnel-through diode 4, intrinsic GaAs wall 5, self-organizing InAs quantum dot layer 6, the p type In that form
xGa
1-xAs/Al
yGa
1-yAs Multiple Quantum Well 7, intrinsic GaAs wall 8, n
+-GaAs collector layer 9.
AlAs GaAs AlAs resonance tunnel-through diode layer be a kind of superlattice structure, its core is to clip nanoscale thin layer GaAs potential well material in the AlAs barrier material of nanoscale thin layer, is a kind of two ends negative resistance device based on quantum tunneling effect.As get each layer thickness and be: the AlAs potential barrier is about 10nm, the GaAs potential well is about 10nm.By quantum mechanics as can be known, in potential well, formed discrete energy levels, under not biased situation, the position E of first quantized level in the trap
1(at the bottom of the emitter conduction band) is higher than emitter electronics Fermi level E
F, do not have the resonance tunnel-through phenomenon to take place; When applying bias increases, make E
1Be lower than emitter Fermi level E
F, but when being higher than at the bottom of the emitter conduction band, electronics has bigger probability tunnelling to pass through dual potential barrier structure.With the rising of bias voltage, tunnelling current rises.Work as E
1When aliging at the bottom of the emitter conduction band, tunnelling current reaches peak value.If bias voltage further strengthens, make E
1When being lower than at the bottom of the emitter conduction band, resonance tunnel-through ends, and electric current jumps to electric current between paddy from peak current, the negative differential resistance effect occurs.
Self-organizing InAs quantum dot layer, be by SK (Stranski-Krastanov) pattern on the intrinsic GaAs of tens nanometers wall, because the InAs of growth and the lattice mismatch self-organizing of GaAs form.Its size can be grown to: highly be about 3nm, end diameter is about 20nm.The energy level of electronics becomes discrete quantized level in the quantum dot, and quantum-dot structure produces three-dimensional quantum limitation effect to charge carrier wherein.Each quantum dot can by capture monochromatic light give birth to the hole and and electron recombination, and electron energy level descends and the coupling of GaAs potential well electron energy level near making the AlAs potential barrier, makes the increase of tunnelling electronics.So can reach the detection of a few photohole by the variation of tracking system electric current, thereby reach a few photon detection, the sensitivity that the raising system surveys.
P type In
xGa
1-xAs/Al
yGa
1-yThe As Multiple Quantum Well is to utilize the semi-conducting material molecular beam epitaxy technique to cover on the self-organizing InAs quantum dot layer, successively the Al in alternating growth n cycle
yGa
1-yAs barrier layer (n+1 layer) and In
xGa
1-xAs potential well layer (n layer).The value that can get n is 30 or 50.In
xGa
1-xAs and Al
yGa
1-yThe value of the bed thickness of As and x, y is relevant with the infrared wavelength that will survey.This is because of the spectral sensitivity characteristic of quantum trap infrared detector or the transition energy of intersubband, by In
xGa
1-xThe thickness of As trap and Al
yGa
1-yThe height decision of As potential barrier, dark current (mainly being the tunnelling current that flows through potential barrier) is determined by potential barrier thickness in addition.So can be by changing In
xGa
1-xThe component x of In, In among the As
xGa
1-xAs potential well width or Al
yGa
1-yThe As barrier layer thickness improves the performance of device.In addition, the lattice mismatch of InGaAs and AlGaAs is bigger, for fear of In
xGa
1-xThe three dimensional growth In of As layer
xGa
1-xAs trap bed thickness can not surpass critical thickness and x is unsuitable excessive.Can get x is 0.2～0.3.
When the AlGaAs of quantum trap infrared detector potential barrier thickness is 25nm, by typical quantum trap infrared detector design general rule, can be by changing In
xGa
1-xThe width of As potential well, the component of In or adjusting Al
yGa
1-yThe A1 component of As potential barrier realizes any one infrared acquisition wavelength of wavelength 3～20 micron wavebands, and concrete parameter can see Table 1.
Table 1
| In component/x | A1 component/y | Trap is wide/nm | Survey peak value (μ m) |
| 0.3 | 0.45 | 8 | 3.5 |
| 0.3 | 0.26 | 6 | 5 |
| 0.2 | 0.12 | 4 | 10 |
| 0.2 | 0 | 8 | 15 |
| 0.2 | 0 | 4 | 20 |
Claims (1)
1. self-amplifying infrared detector comprises: the detectable signal that InGaAs/AlGaAs multiple quantum well infrared detector and AlAs GaAs AlAs resonance tunnel-through diode and InAs quantum dot are formed is characterized in that being specially from amplifier section:
By on substrate (1), being arranged in order growth n
+-GaAs emission electrode layer (2), the first intrinsic GaAs wall (3), by the AlAs barrier layer the GaAs potential well layer AlAs the barrier layer resonance tunnel-through diode (4), the second intrinsic GaAs wall (5), self-organizing InAs quantum dot layer (6), the p type In that form
xGa
1-xAs/Al
yGa
1-yAs Multiple Quantum Well (7), the 3rd intrinsic GaAs wall (8), n
+-GaAs collector layer (9) is formed;
The thickness of the said first intrinsic GaAs wall (3) is 18～22nm;
Each layer of said above-mentioned resonance tunnel-through diode (4) is nanoscale thin layer superlattice structure, and each layer thickness is identical, is 8～12nm;
The averag density of said self-organizing InAs quantum dot layer (6) is 80-120 μ m
-2
Said p type In
xGa
1-xAs/Al
yGa
1-yAs Multiple Quantum Well (7) is by alternating growth 30 or 50 cycle Al
yGa
1-yAs barrier layer/p type doping In
xGa
1-xThe As quantum well layer is formed, In
xGa
1-xThe thickness of As quantum well, In component x value, Al
yGa
1-yThe value of As barrier height, Al component y value is relevant with the infrared wavelength that will survey.
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|---|---|---|---|
| CNB2005100299828A CN100392870C (en) | 2005-09-23 | 2005-09-23 | Self-amplifying infrared detector |
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|---|---|---|---|
| CNB2005100299828A CN100392870C (en) | 2005-09-23 | 2005-09-23 | Self-amplifying infrared detector |
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| CN100392870C true CN100392870C (en) | 2008-06-04 |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100498288C (en) * | 2006-06-30 | 2009-06-10 | 中国科学院上海技术物理研究所 | Detector converted on infrared wavelength, near-infrared wavelength |
| CN100424896C (en) * | 2006-11-24 | 2008-10-08 | 中国科学院上海技术物理研究所 | Self gain quanta trap infrared detector in long wave |
| CN100495742C (en) * | 2006-12-21 | 2009-06-03 | 中国科学院半导体研究所 | InGaAs / InAlAs coupling quantum spot infrared detector and preparation method thereof |
| CN100479202C (en) * | 2006-12-27 | 2009-04-15 | 中国科学院上海技术物理研究所 | Resonance tunnel penetration enhanced indium gallium arsenic/gallium arsenic quanta trap infrared detector |
| CN101109724B (en) * | 2007-08-16 | 2010-05-19 | 中国科学院上海技术物理研究所 | Method for detecting quantum dot density inside multiple quantum well light emitting diode |
| CN100559618C (en) * | 2007-10-31 | 2009-11-11 | 中国科学院上海技术物理研究所 | The quanta point resonance tunnel penetration diode and the detection method that are used for faint light detection |
| CN103337568B (en) * | 2013-05-22 | 2016-01-20 | 西安交通大学 | Strained super lattice tunnel junction ultraviolet LED epitaxial structure and preparation method thereof |
| CN106785246A (en) * | 2016-12-14 | 2017-05-31 | 上海电机学院 | A kind of phasmon active waveguide switching device |
| CN108538935B (en) * | 2018-04-16 | 2021-02-19 | 北京工业大学 | Tunnel compensation superlattice infrared detector |
| JP7291942B2 (en) * | 2019-07-26 | 2023-06-16 | 国立大学法人神戸大学 | Quantum infrared sensor |
| CN112151639B (en) * | 2020-10-14 | 2022-06-21 | 中国工程物理研究院电子工程研究所 | Nitride resonance tunneling diode structure suitable for ultraviolet detection |
| WO2023000272A1 (en) * | 2021-07-22 | 2023-01-26 | 中山大学 | High-gain photoelectric detector |
| CN113644150B (en) * | 2021-07-22 | 2024-08-30 | 中山大学 | High-gain photoelectric detector |
| CN114899269A (en) * | 2021-12-01 | 2022-08-12 | 郑厚植 | High-gain photoelectric detector and high-gain photoelectric detection method |
| CN114551618B (en) * | 2022-02-10 | 2023-09-12 | 中国科学院上海技术物理研究所 | Structure of wide-spectrum InGaAs focal plane and preparation method thereof |
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