CN1286397A - Cascaded infrared photovoltaic detector with more quantum traps - Google Patents

Cascaded infrared photovoltaic detector with more quantum traps Download PDF

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Publication number
CN1286397A
CN1286397A CN 00125725 CN00125725A CN1286397A CN 1286397 A CN1286397 A CN 1286397A CN 00125725 CN00125725 CN 00125725 CN 00125725 A CN00125725 A CN 00125725A CN 1286397 A CN1286397 A CN 1286397A
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quantum well
layer
multiple quantum
quantum
traps
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CN1123935C (en
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陆卫
李宁
江俊
袁先璋
李志锋
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Abstract

A cascaded infrared photovoltaic detector with more quantum traps has a compound semiconductor substrate, on which 5 barrier layers and quantum trap layers with different widthes are alternatively grown to form a period and multiple periods of quantum trape are repeatably grown. It features stronger photovoltaic signals in quantum trap area at low temp under infrared radiation, so it is more suitable for infrared focal plane device.

Description

Cascaded infrared photovoltaic detector with more quantum traps
The present invention relates to multiple quantum well infrared detector, particularly cascaded infrared photovoltaic detector with more quantum traps.
In present quantum type infrared focus plane technology, photosensitive element chip all is made up of the detector picture dot of electricity and optical fractionation on the space of some guide types.And there is bigger dark current in the guide type device, and this dark current requirement sensing circuit has enough big electric capacity and adapts to it, thereby has brought following 2 problems:
1, the ultimate principle of guide type device has determined the quantum efficiency of device to be proportional to absorption coefficient, in order to improve the quantum efficiency of device, or in order under similar detectivity condition, to increase responsiveness significantly, need to increase the electron concentration on the quantum well ground state, but the increase of electron concentration directly increases dark current to ultralinear again, directly causes the detectivity of device to descend.Energy position place that the basic physics cause of very big dark current is an excited state exists does not very highly have the density of electronic states of contribution to light absorption, exists the doping content of an optimization to come contradiction between balance doping content and the responsiveness for this reason;
2, owing to be the guide type device, along with doping content rising or response wave length develop to the long wave direction, the impedance exponential form of device descends, make sensing circuit saturated soon, require the electric capacity of sensing circuit to have exponential form to rise for this reason, limit but this electric capacity has been read out the microelectronic technique of circuit fabrication, the increase of this electric capacity simultaneously also causes the increasing of sensing circuit self-noise, the final performance of focal plane device is descended, need to adopt the photovoltaic type device to solve this problem for this reason.
The photovoltaic type device architecture of people's proposition at present is similar substantially to the guide type device architecture, structure has the quantum well active region of opto-electronic conversion effect to infrared light between upper/lower electrode, in the active region, there is a quantum well that mixes to be used for infrared Absorption, and with the electron excitation of ground state to excited state, adjacent with this quantum well is the potential barrier of a gradual change, makes the electronics on excited state moved by this built in field effect, thereby form photovoltage jointly with impurity center, i.e. the photovoltaic signal. document Jung Hee Leeet.al. " An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infraredphotodetector operating at 3.4 μ m and 205K " the Appled Physics Letters Vol.74 No.5 that sees reference; Y.H.Wang et.al. " Voltage-tunable dual-mode operation InAlAs/InGaAs quantumwell infrared photodetector for narrow-and broadband detection at 10 μ m " Appl.Phys.Lett.62 (6), M.Z.Tidrow et.al. " A three-well quantum well infraredphotodetector " Appl.Phys.Lett.69 (22).
Though the working temperature of device and responsiveness and detectivity are superior not as good as the guide type device, but the photovoltaic type device is a developing direction, therefore the quantum trap infrared detector structure of any photovoltaic type all is of great practical value as long as the photovoltaic type performance can be done remarkable improvement.
The purpose of this invention is to provide a kind of basic mechanism that is independent of existing photovoltaic detector, utilize the cascade transmission effects of photoelectron in coupling quantum well, design a kind of structurally unique cascaded infrared photovoltaic detector with more quantum traps, its photovoltaic performance is obviously strengthened.
Design proposal of the present invention is as follows:
Promptly on a compound semiconductor materials substrate, adopt molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) film growth techniques, with compound semiconductor materials alternating growth barrier layer and quantum well layer, form a Multiple Quantum Well, its structure is:
C 1L 1(AL 2AL 2AL 2…A)L 1C 2，
C 1Be lower electrode layer, C 2Be upper electrode layer; L 1Be wide barrier layer; L 2Be two potential barrier separation layers between the single cycle; A is the single cycle, is the basic probe unit of Multiple Quantum Well coupled structure; By
QW 1L 3QW 2L 3QW 3L 3QW 4L 3QW 5Constitute QW 1 ... 5The quantum well layer that differs for width; L 3Barrier layer for basic probe unit in the Multiple Quantum Well coupled structure.
In order to improve the photovoltaic signal of detector effectively, but a repeated growth 30-50 cycle, and use L between each cycle 2Barrier layer is isolated.After the material growth is finished, at the electrode layer C of Multiple Quantum Well chip 1Last system bottom electrode, C 2Last system top electrode.
Said compound semiconductor materials is GaAs/AlGaAs or InGaAs/AlGaAs.
For convenience of explanation, we are example with the GaAs/AlGaAs mqw material, and it is as follows to provide elaboration synoptic diagram of the present invention:
Fig. 1 is a single cycle Multiple Quantum Well cascade photovoltaic detector photoelectric response schematic diagram of the present invention;
Fig. 2 is the structural representation of Multiple Quantum Well cascade photovoltaic detector of the present invention;
Fig. 3 cuts open for the local amplification of the upper electrode layer A of the Multiple Quantum Well cascade photovoltaic detector of Fig. 2 and shows synoptic diagram.
Below in conjunction with accompanying drawing single cycle Multiple Quantum Well cascade photovoltaic detector photoelectric response principle of the present invention is elaborated: see Fig. 1, the electron excitation that will be in ground state by infrared light in doped quantum well forms the photoelectron of detector on excited state.This photoelectron is within life-span on the excited state and contiguous coupling quantum well excited state generation resonance tunnel-through at it, thereby photoelectron is transferred to contiguous quantum well.Because the energy difference of ground state and excited state is the integral multiple of vertical optical phonon energy in the contiguous quantum well, for this reason the life-span of electronics on excited state very short, photoelectron is very fast to relax towards ground state in the vicinity quantum well.The transfer of cascade tunnelling takes place in photoelectron in one group of coupling quantum well subsequently, has caused the increasing of photoelectron and impurity positive center distance, forms the photovoltaic signal.
More clear for mechanism being set forth, we are embodiment with the GaAs/AlGaAs quantum-well materials still.
1. the preparation of Multiple Quantum Well chip:
(1) growth of the membraneous material of Multiple Quantum Well chip:
Adopt molecular beam epitaxy (MBE) on GaAs substrate 1, to grow in turn: C by following structure 1Be GaAs:Si, concentration is 10 18/ cm 3Thickness is 1 μ m; L 1Be Al 0.45Ga 0.55As ' thickness is 50nm; QW 1Be GaAs:Si, concentration is 10 18/ cm 3Thickness is 2.55nm; L 3Be Al 0.45Ga 0.55As, thickness are 2nm; QW 2Be Al 0.25Ga 0.75As, thickness are 5nm; L 3Be Al 0.45Ga 0.55As, thickness are 2nm; QW 3Be Al 0.17Ga 0.83As, thickness are 50nm; L 3Be Al 0.45Ga 0.55As, thickness are 2nm; QW 4Be Al 0.9Ga 0.91As, thickness are 5nm; L 3Be Al 0.45Ga 0.55As, thickness are 2nm; QW 5Be GaAs, thickness is 5nm; Then with QW 1To QW 5Be one-period, and use L between per two cycles 2Be Al 0.45Ga 0.55As, thickness are that 10nm does the potential barrier isolation, 30 cycles of repeated growth, last regrowth L 1Be Al 0.45Ga 0.55As ' thickness is 50nm; C 2Be GaAs:Si, concentration is 10 18/ cm 3' thickness is 100nm; Form a Multiple Quantum Well 2.
Width is the GaAs QW of 2.55nm 1Ground state and first excited state all are in the limited local attitude of formation in the quantum well in the quantum well, but first excited state and adjacent quantum well QW 2In first excited state be in the energy position of Near resonance oscillating tunnelling, quantum well QW simultaneously 2, QW 3, QW 4, QW 5Ground state successively all forms the tunneling resonance state with the first excited state of adjacent quantum well.QW in device 1, QW 2, QW 3, QW 4, QW 55 quantum well structures be combined to form a basic probe unit, promptly form a principle device.
(2) electrode preparation
Top electrode 3 directly is made in the C at top 2On the layer, bottom electrode 4 is by corroding portion C 1The above material of layer all removed, and exposes C 1Layer, preparation bottom electrode 4 on this layer is seen Fig. 2 again.
(3) Multiple Quantum Well chip table preparation
At upper electrode layer C 2Go up and to make grating, see Fig. 3, the infrared luminous energy of incident is coupled in the quantum well fully goes, produce quantum well QW by caustic solution 1In electronics from ground state to the first excited state transition.
2, the course of work of device:
The Multiple Quantum Well chip is placed in the refrigeration Dewar that has an infrared band optical window.The infrared response wave band is the 8-10 micron, and chip refrigeration is to about 80K.Carefully finely tune the bias voltage 7 of device, form good resonance tunnel-through condition, subsequently infrared light 5 is radiated on the Multiple Quantum Well chip, this moment is because exciting of infrared light causes quantum well QW 1In electronics be excited to enter first excited state, this excited state and adjacent quantum well excited state are in resonance state simultaneously, electronics is tunneling to QW very soon 2In the trap.At QW 2In the quantum well electronics to the speed of ground state relaxation more than QW 1Fast in the quantum well, so the tunnelling electronics will be tunneling to QW apace 5The ground state of quantum well, and this electronics is difficult to reverse tunnel to QW 1In the quantum well.Finishing of this process just formed photovoltaic voltage signal 6, and the duration of this signal is by determining to other longer scattering processes of ground state relaxation time than the excited state in the quantum well.So just improve the useful life of photo-generated carrier, strengthened the responsiveness of device.
The present invention has following good effect and advantage:
1. the present invention has been owing to adopted the cascade tunneling structure, can be more effectively with photoelectron in the real space with assorted The matter center of positive charge is separated, and guarantees that separated electronics can not directly turn back to the impurity center position, like this Just effectively improved responsiveness and the device operating temperature of infrared light, made it satisfy worker under liquid nitrogen temperature Do.
2. the present invention is the photovoltaic type device, the relatively current guide type infrared quantum trap device that generally uses, Effectively reduced dark current, in focal plane device is used, can have been arranged the very long time of integration, to improve device The sensitivity of part and temperature resolution.

Claims (3)

1. cascaded infrared photovoltaic detector with more quantum traps, comprise a substrate (1), go up at substrate (1) and adopt molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) film growth techniques, alternating growth barrier layer and quantum well layer, form a Multiple Quantum Well (2), it is characterized in that:
Said Multiple Quantum Well (2) structure is
C 1L 1(AL 2AL 2AL 2A) L 1C 2, C 1Be lower electrode layer, C 2Be upper electrode layer; L 1Be wide barrier layer; L 2Be two potential barrier separation layers between the single cycle; A is the single cycle, is the basic probe unit of Multiple Quantum Well coupled structure; By
QW 1L 3QW 2L 3QW 3L 3QW 4L 3QW 5Constitute QW 1 ... 5The quantum well layer that differs for width; L 3Barrier layer for basic probe unit in the Multiple Quantum Well coupled structure;
And be the single cycle with A, repeated growth 30-50 cycle;
Top electrode (3) directly is made in the C at top 2On the layer, bottom electrode (4) is by corroding portion C 1The above material of layer all removed, and exposes C 1Layer prepares bottom electrode (4) again on this layer.
2. according to claim 1 cascaded infrared photovoltaic detector with more quantum traps, it is characterized in that: said upper electrode layer C 2Be raster shape.
3. according to claim 1 cascaded infrared photovoltaic detector with more quantum traps, it is characterized in that: the material of said Multiple Quantum Well (2) is GaAs/AlGaAs or InGaAs/AlGaAs compound semiconductor.
CN 00125725 2000-10-19 2000-10-19 Cascaded infrared photovoltaic detector with more quantum traps Expired - Fee Related CN1123935C (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100392870C (en) * 2005-09-23 2008-06-04 中国科学院上海技术物理研究所 Self-amplifying infrared detector
CN102110736A (en) * 2010-11-09 2011-06-29 北京理工大学 Colloid quantum dot-based infrared photoelectric detector and manufacturing method thereof
CN103500766A (en) * 2013-10-19 2014-01-08 山东大学 Broadband long-wave-response GaAs/AlxGa1-xAs quantum well infrared detector and manufacturing method and application thereof
CN104183658A (en) * 2014-08-15 2014-12-03 中国科学院上海技术物理研究所 Potential barrier cascading quantum well infrared detector
CN105789354A (en) * 2016-04-15 2016-07-20 中国科学院上海技术物理研究所 Wide-spectrum quantum cascade infrared detector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100580923C (en) * 2007-12-07 2010-01-13 中国科学院上海技术物理研究所 Quanta trap infrared detector for multi-folded light dispersion coupling

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100392870C (en) * 2005-09-23 2008-06-04 中国科学院上海技术物理研究所 Self-amplifying infrared detector
CN102110736A (en) * 2010-11-09 2011-06-29 北京理工大学 Colloid quantum dot-based infrared photoelectric detector and manufacturing method thereof
CN102110736B (en) * 2010-11-09 2012-05-23 北京理工大学 Colloid quantum dot-based infrared photoelectric detector and manufacturing method thereof
CN103500766A (en) * 2013-10-19 2014-01-08 山东大学 Broadband long-wave-response GaAs/AlxGa1-xAs quantum well infrared detector and manufacturing method and application thereof
CN104183658A (en) * 2014-08-15 2014-12-03 中国科学院上海技术物理研究所 Potential barrier cascading quantum well infrared detector
CN105789354A (en) * 2016-04-15 2016-07-20 中国科学院上海技术物理研究所 Wide-spectrum quantum cascade infrared detector

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