CN111540797A - Middle and far infrared avalanche photoelectric detector - Google Patents
Middle and far infrared avalanche photoelectric detector Download PDFInfo
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- CN111540797A CN111540797A CN202010404849.0A CN202010404849A CN111540797A CN 111540797 A CN111540797 A CN 111540797A CN 202010404849 A CN202010404849 A CN 202010404849A CN 111540797 A CN111540797 A CN 111540797A
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- 239000000463 material Substances 0.000 claims abstract description 50
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 47
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000010521 absorption reaction Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000001514 detection method Methods 0.000 claims abstract description 5
- 229910005542 GaSb Inorganic materials 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
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- 239000000523 sample Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Abstract
The invention discloses a middle and far infrared avalanche photodetector, which comprises: the substrate, the buffer layer, the lower ohmic contact layer, the multiplication layer, the charge layer, the gradient layer, the absorption layer and the upper ohmic contact layer are sequentially connected from bottom to top, and the doping types of the substrate and the buffer layer are n-type; or the substrate, the buffer layer, the second ohmic contact layer, the absorption layer, the gradient layer, the charge layer, the multiplication layer and the first ohmic contact layer are sequentially connected from bottom to top, and the doping types of the substrate and the buffer layer are p-type; wherein the multiplication layer is AlAsxSb1‑xThe material, x is more than or equal to 0.12 and less than or equal to 0.18, and a plurality of gradient layers (InAs)m/(AlAs0.15Sb0.85)nQuantum well structures or InyAl1‑yAszSb1‑zThe detection wavelength of the material and the absorption layer is middle and far infrared wave band. The invention providesThe supplied middle and far infrared avalanche photodetector can block dark current, reduce noise, does not need a cooling device, improves the working temperature of devices, reduces cost and is convenient to use.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a middle and far infrared avalanche photodetector with the wavelength larger than 3.0 microns.
Background
The middle and far infrared avalanche photodetector has very important application in both military field and civil field, such as night vision, early warning, environment monitoring, single lightSub-probe and free communication, etc. At present, commercial mid-far infrared detectors are mainly made of mercury cadmium telluride materials, but mercury cadmium telluride avalanche photodetectors need to work at low temperature, so that the cost caused by low configuration temperature is increased, and the detectors are inconvenient to use. In addition, in the existing pure InAs avalanche photodetector which is researched more frequently, in order to obtain high gain, thicker InAs material needs to be epitaxially grown, the cost is increased, and meanwhile, the carrier concentration in the material of the InAs avalanche photodetector needs to be ensured to be low and to be 10 DEG14cm-3And the magnitude of the order of magnitude.
Disclosure of Invention
Technical problem to be solved
The present invention aims to provide a mid-and far-infrared avalanche photodetector to at least partially solve the above technical problems.
(II) technical scheme
In view of the above, the present invention provides a mid-far infrared avalanche photodetector, comprising:
the substrate 1, the buffer layer 2, the lower ohmic contact layer 3, the multiplication layer 4, the charge layer 5, the gradient layer 6, the absorption layer 7 and the upper ohmic contact layer 8 are sequentially connected from bottom to top, and the doping types of the substrate 1 and the buffer layer 2 are n-type; or
The substrate 1, the buffer layer 2, the second ohmic contact layer 8, the absorption layer 7, the graded layer 6, the charge layer 5, the multiplication layer 4 and the first ohmic contact layer 3 are sequentially connected from bottom to top, and the doping types of the substrate 1 and the buffer layer 2 are p-type;
wherein the multiplication layer 4 is AlAsxSb1-xMaterial, x is more than or equal to 0.12 and less than or equal to 0.18, a plurality of gradient layers 6 (InAs)m/(AlAs0.15Sb0.85)nQuantum well structures or InyAl1-yAszSb1-zThe detection wavelength of the material, the absorption layer 7, is the middle and far infrared band.
Further, wherein:
in some embodiments, the substrate 1 is an InAs or GaSb substrate.
In some embodiments, the buffer layer 2 is of InAs or GaSb material and has a thickness of 0.3 to 0.5 microns.
In some embodiments, the thickness of the lower ohmic contact layer 3 is 0.5 to 1 micron, the doping type is n-type, and the carrier concentration is 5 × 1017cm-3～2×1018cm-3。
In some embodiments, the upper ohmic contact layer 8 has a thickness of 0.5 to 1 micron, a doping type of p-type, and a carrier concentration of 5 × 1017cm-3～2×1018cm-3。
In some embodiments, the thickness of the multiplication layer 4 is 0.5 micron to 1 micron, and the carrier concentration is less than or equal to 1 × 1016cm-3。
In some embodiments, graded layer 6 is a plurality (InAs)m/(AlAs0.15Sb0.85)nIn the quantum well structure, along the direction from the absorption layer 7 to the charge layer 5, the thickness component m of InAs is reduced from 5 nm to 0 nm, and AlAs0.15Sb0.85Increases the thickness component n from 0 nm to 5 nm.
In some embodiments, graded layer 6 is InyAl1-yAszSb1-zIn the material, along the direction from the absorption layer 7 to the charge layer 5, the In component y is reduced from 1 to 0, and the As component z is reduced from 1 to x.
In some embodiments, the charge layer 5 is AlAsxSb1-xThe material has the thickness of 200-1000 nm, is doped in n type, and has the carrier concentration of 1 × 1017cm-3～1×1018cm-3。
In some embodiments, the absorption layer 7 is made of InAs material with a thickness of 1-3 μm, and the lower ohmic contact layer 3 and the upper ohmic contact layer 8 are made of InAs material.
In some embodiments, the absorption layer 7 is made of InAs/GaSb superlattice material, the thickness of the absorption layer is 1-3 microns, and the lower ohmic contact layer 3 and the upper ohmic contact layer 8 are made of InAs/GaSb superlattice material.
In some embodiments, the absorption layer 7 is made of InAs/InAsSb superlattice material, the thickness of the absorption layer is 1-3 microns, and the lower ohmic contact layer 3 and the upper ohmic contact layer 8 are made of InAs/InAsSb superlattice material.
In some embodiments, the carriers of the absorption layer 7Is p-type and has a carrier concentration of 1 × 1015cm-3～2×1016cm-3。
(III) advantageous effects
The middle and far infrared avalanche photodetector provided by the invention has the following beneficial effects:
(1) based on a lattice constant of
Family material system of antimonide semiconductor compound, using AlAs matched with substrate latticexSb1-xThe material is used as a multiplication layer, A1AsSb has high forbidden band width, on one hand, the high gain effect can be better realized, on the other hand, the dark current of the device can be blocked, and the working temperature of the device is increased to room temperature, so that a cooling device is not needed, the cost is reduced, the use is convenient, and moreover, the material is based on a III-V system, the process is relatively mature, and the compatibility is strong;
(2) the absorption layer is made of InAs or InAs/GaSb (InAsSb) superlattice material, so that the wavelength can be adjusted by changing the thickness of InAs or GaSb (InAsSb), the absorption layer can cover the whole infrared band, has a lower electron hole impact ionization rate ratio, and is suitable for providing gain for a multiplication region;
(3) increase (InAs)m/(AlAs0.15Sb0.85)nQuantum well structure or pure InyAl1-yAszSb1-zThe material is used as a gradient layer, the energy band of the gradient layer is adjusted through energy band engineering, the band-guide difference between the absorption layer and the multiplication layer is buffered, the photoproduction electrons of the absorption layer are transported to the avalanche multiplication layer for multiplication and amplification, and the photoresponse and multiplication effect of the device are improved;
(4) adding a layer of AlAsxSb1-xThe material is used as a charge layer, so that the distribution of voltage in an absorption region is reduced, the tunneling current of the absorption region is reduced, the noise of the device is reduced, the performance of the device is improved, and the room-temperature operation is realized.
Drawings
Fig. 1 is a structural diagram of a mid-far infrared avalanche photodetector provided by an embodiment of the present invention.
In the figure:
First ohmic contact layer 3 multiplication layer 4
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention provides a middle and far infrared avalanche photodetector based on an antimonide semiconductor compound family system, which comprises:
the substrate 1, the buffer layer 2, the lower ohmic contact layer 3, the multiplication layer 4, the charge layer 5, the gradient layer 6, the absorption layer 7 and the upper ohmic contact layer 8 are sequentially connected from bottom to top, and the doping types of the substrate 1 and the buffer layer 2 are n-type; or
The substrate 1, the buffer layer 2, the second ohmic contact layer 8, the absorption layer 7, the graded layer 6, the charge layer 5, the multiplication layer 4 and the first ohmic contact layer 3 are sequentially connected from bottom to top, and the doping types of the substrate 1 and the buffer layer 2 are p-type;
wherein the multiplication layer 4 is AlAsxSb1-xMaterial, x is more than or equal to 0.12 and less than or equal to 0.18, a plurality of gradient layers 6 (InAs)m/(AlAs0.15Sb0.85)nQuantum well structures or InyAl1-yAszSb1-zThe detection wavelength of the material, the absorption layer 7, is the middle and far infrared band.
In view of the above, an embodiment of the present invention provides a specific mid-infrared avalanche photodetector, referring to fig. 1, which has the following structure, including:
a substrate 1 made of a material
The InAs or GaSb of family can be better matched with the crystal lattice of the material which grows subsequently by adopting the substrate,the method is favorable for obtaining high-quality devices; or may be non
The GaAs and Si family, the mismatching between the substrate and the subsequent epitaxial layer needs to be adjusted subsequently, and the epitaxial growth is carried out.
A buffer layer 2 made of a material
InAs or GaSb of family, the thickness is 0.3-0.5 micron, the doping concentration is 5 × 1017cm-3～2×1018cm-3The purpose is to smooth the surface and simultaneously can be used as an electrode ohmic contact.
And a lower ohmic contact layer 3, the thickness of which is 0.5-1 micron, the material of which is InAs, InAs/GaSb or InAs/InAsSb, the thickness of which is consistent with that of the absorption layer 7, and the material is doped in an n type at the same time, wherein the concentration of the lower ohmic contact layer is 5 × 1017cm-3～2×1018cm-3And the method is used for manufacturing ohmic contact of the lower electrode.
Fourthly, a multiplication layer 4, the material of the multiplication layer is AlAsxSb1-xWherein, the range of the component x of As is more than or equal to 0.12 and less than or equal to 0.18, the thickness of the multiplication layer 4 is 0.5 to 1 micron, and the carrier concentration is less than or equal to 1 × 1016cm-3The AlAsxSb1-xHas high electron-hole impact ionization rate and wide energy gap width, and is used for improving gain and blocking dark current to reduce noise when impact ionization occurs.
Fifthly, a charge layer 5, the material of the charge layer is AlAsxSb1-xWherein, the composition of As is the same As that in the multiplication layer 4, the thickness of the charge layer 5 is 200 nm-1000 nm, the doping is n-type, and the carrier concentration is 1 × 1017cm-3～1×1018cm-3The purpose of this layer is to reduce the electric field distribution in the absorbing layer 7 and to prevent excessive tunneling currents.
Sixthly, a plurality of gradient layers 6 (InAs)m/(AlAs0.15Sb0.85)nQuantum well structure or pure InyAl1-yAszSb1-zA material; when a plurality of (InAs)m/(AlAs0.15Sb0.85)nIn the quantum well structure, the thickness component m of InAs is reduced from 5 nm to 0 nm along the direction from the absorption layer 7 to the charge layer 5, and AlAs0.15Sb0.85The thickness component n of (a) increases from 0 nm to 5 nm; when pure In is usedyAl1-yAszSb1-zIn the material, the composition y of In decreases from 1 to 0 and the composition z of As decreases from 1 to x along the direction from the absorption layer 7 to the charge layer 5.
Seventhly, an absorption layer 7 is made of InAs, InAs/GaSb superlattice material or InAs/InAsSb superlattice material, the period thickness of the InAs/GaSb superlattice material or InAs/InAsSb superlattice material can be designed according to the required detection wavelength, the absorption layer is used for absorbing middle and far infrared photons to generate electron hole pairs, the electrons are transported to a multiplication layer to carry out avalanche multiplication, the thickness of the layer is 1-3 microns, the current carriers are weak p-type, and the concentration of the current carriers is controlled to be 1 × 1016cm-3Within.
Eighthly, an upper ohmic contact layer 8 which is made of InAs, InAs/GaSb or InAs/InAsSb material, keeps consistent with the material of the absorption layer 7, and simultaneously carries out p-type doping on the material, wherein the concentration is 5 × 1017cm-3～2×1018cm-3And the method is used for manufacturing the ohmic contact of the upper electrode.
After the device epitaxy is completed through the above one to eight structural structures, the epitaxial wafer can be subjected to mesa manufacture through standard semiconductor device processes such as cleaning, photoetching, developing, corrosion, medium film plating, metal electrode sputtering, packaging and the like to form discrete medium and far infrared avalanche photodetector unit devices or area array devices.
In the above embodiment, the normal incidence is adopted, i.e. the infrared light is absorbed by incidence from the front surface of the epitaxy, and if the back incidence is adopted, i.e. the infrared light is absorbed by incidence from the substrate surface, the sequence of 3-8 layers needs to be reversed, the doping type of 2 layers is converted into p type, and the substrate type of 1 layer is converted into p type.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A mid-far infrared avalanche photodetector is characterized by comprising:
the semiconductor device comprises a substrate (1), a buffer layer (2), a first ohmic contact layer (3), a multiplication layer (4), a charge layer (5), a gradual change layer (6), an absorption layer (7) and a second ohmic contact layer (8) which are sequentially connected from bottom to top, wherein the doping types of the substrate (1) and the buffer layer (2) are n-type; or
The substrate (1), the buffer layer (2), the second ohmic contact layer (8), the absorption layer (7), the gradual change layer (6), the charge layer (5), the multiplication layer (4) and the first ohmic contact layer (3) are sequentially connected from bottom to top, and the doping types of the substrate (1) and the buffer layer (2) are p-type;
wherein the multiplication layer (4) is AlAsxSb1-xMaterial, x is more than or equal to 0.12 and less than or equal to 0.18, the gradient layer (6) is a plurality of (InAs)m/(AlAs0.15Sb0.85)nQuantum well structures or InyAl1-yAszSb1-zThe detection wavelength of the absorption region (7) is a middle and far infrared band.
2. The mid-far infrared avalanche photodetector of claim 1, characterized in that the thickness of the multiplication layer (4) is 0.5 to 1 micron, and the carrier concentration is less than or equal to 1 × 1016cm-3。
3. The mid-far infrared avalanche photodetector of claim 1, characterized in that:
the gradual change layer (6) is a plurality of layers (InAs)m/(AlAs0.15Sb0.85)nIn the case of quantum well structure, the quantum well structure is arranged along the absorption layer (7)The direction of the charge layer (5), in which the thickness component m of InAs is reduced from 5 nm to 0 nm, AlAs0.15Sb0.85Increases the thickness component n from 0 nm to 5 nm.
4. The mid-far infrared avalanche photodetector of claim 1, characterized In that the graded layer (6) is InyAl1-yAszSb1-zIn the material, along the direction from the absorption layer (7) to the charge layer (5), the component y of In is reduced from 1 to 0, and the component z of As is reduced from 1 to x.
5. The mid-far infrared avalanche photodetector of claim 1, characterized in that the substrate (1) is an InAs or GaSb substrate.
6. The mid-far infrared avalanche photodetector according to claim 1, characterized in that the buffer layer (2) is of InAs or GaSb material with a thickness of 0.3-0.5 microns.
7. The mid-far infrared avalanche photodetector of claim 1, characterized in that:
the thickness of the lower ohmic contact layer (3) is 0.5-1 micron, the doping type is n-type, and the carrier concentration is 5 × 1017cm-3～2×1018cm-3；
The thickness of the upper ohmic contact layer (8) is 0.5-1 micron, the doping type is p-type, and the carrier concentration is 5 × 1017cm-3～2×1018cm-3。
8. The mid-far infrared avalanche photodetector of claim 1, characterized in that the charge layer (5) is AlAsxSb1-xThe material has the thickness of 200-1000 nm, is doped in n type, and has the carrier concentration of 1 × 1017cm-3～1×1018cm-3。
9. The mid-far infrared avalanche photodetector of claim 1, characterized in that:
the absorption layer (7) is made of InAs materials, the thickness of the absorption layer is 1-3 micrometers, and the lower ohmic contact layer (3) and the upper ohmic contact layer (8) are made of InAs materials; or
The absorption layer (7) is made of InAs/GaSb superlattice materials, the thickness of the absorption layer is 1-3 microns, and the lower ohmic contact layer (3) and the upper ohmic contact layer (8) are made of InAs/GaSb superlattice materials; or
The absorbing layer (7) is made of InAs/InAsSb superlattice materials, the thickness of the absorbing layer is 1-3 microns, and the lower ohmic contact layer (3) and the upper ohmic contact layer (8) are made of InAs/InAsSb superlattice materials.
10. The mid-far infrared avalanche photodetector of any one of claims 1 to 9, wherein the carriers of the absorption layer (7) are p-type with a carrier concentration of 1 × 1015cm-3～2×1016cm-3。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022099746A1 (en) * | 2020-11-12 | 2022-05-19 | 江苏华兴激光科技有限公司 | Single-carrier high-speed detector for 850 nm waveband |
| CN114582996A (en) * | 2020-12-02 | 2022-06-03 | 中国科学院半导体研究所 | Periodically-changed superlattice wide-spectrum infrared detector and preparation method thereof |
| WO2022237495A1 (en) * | 2021-05-11 | 2022-11-17 | 华为技术有限公司 | Apd, preparation method for apd, detector and laser radar system |
| CN115548144A (en) * | 2022-11-04 | 2022-12-30 | 安徽华晟新能源科技有限公司 | Semiconductor substrate and processing method thereof, solar cell and preparation method thereof |
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| CN103022218A (en) * | 2012-12-26 | 2013-04-03 | 华中科技大学 | InAs avalanche photodiode and method for manufacturing same |
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