CN100454585C - Gallium nitride-base ultraviolet detector with PIN structure and production thereof - Google Patents

Gallium nitride-base ultraviolet detector with PIN structure and production thereof Download PDF

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Publication number
CN100454585C
CN100454585C CNB2004100743636A CN200410074363A CN100454585C CN 100454585 C CN100454585 C CN 100454585C CN B2004100743636 A CNB2004100743636 A CN B2004100743636A CN 200410074363 A CN200410074363 A CN 200410074363A CN 100454585 C CN100454585 C CN 100454585C
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gallium nitride
type ohmic
layer
pin structure
ohmic contact
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CN1747184A (en
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赵德刚
杨辉
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Institute of Semiconductors of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to a gallium nitride-base ultraviolet detector with a PIN structure. The present invention is characterized in that the present invention comprises a substrate, an N-type ohmic contact layer which is manufactured on the substrate, a source layer which is manufactured on the N-type ohmic contact layer, a window layer which is manufactured on the source layer, an N-type ohmic electrode which is manufactured on the N-type ohmic contact layer, and a p-type ohmic electrode which is manufactured on the window layer. The area of the source layer is less than that of the N-type ohmic contact layer.

Description

PIN structure gallium nitride-base ultraviolet detector and preparation method thereof
Technical field
The invention belongs to field of semiconductor devices, be meant a kind of novel PIN structure gallium nitride-base ultraviolet detector device especially.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) are big with its energy gap, spectral region is wide (having covered from ultraviolet to infrared all band), heat-resisting quantity and good corrosion resistance, in optoelectronics and microelectronics field huge using value are arranged.The GaN ultraviolet detector is a kind of very important GaN base optical electronic part, and, military domain civilian in guided missile alarm, the detection of rocket plumage cigarette, ultraviolet communication, chemical and biological weapons detection, aircraft guidance, spaceship, fire monitoring etc. has important use to be worth.Compare with the silicon ultraviolet detector, the GaN base ultraviolet detector because have that visible light is blind, quantum efficiency is high, the incomparable advantage of can under high temperature and causticity environment, working or the like, can accomplish that in actual applications false alarm rate is low, highly sensitive, antijamming capability is strong, be subjected to people's attention greatly.
In numerous gallium nitride ultraviolet detector device architectures and since the PIN structure have external quantum efficiency height, dark current little, be fit to do advantage such as array, be subject to people's attention.Up to the present, in the structure of all PIN structure gallium nitride ultraviolet detectors, all adopt the intrinsic gallium nitride, because the intrinsic gallium nitride has higher background election concentration as active area, cause width of depletion region very narrow, be difficult to further improve the external quantum efficiency of device.But the background election concentration of intrinsic gallium nitride is difficult to further reduce, thereby has hindered further developing of gallium nitride ultraviolet detector.
Summary of the invention
The objective of the invention is to propose novel PIN structure gallium nitride ultraviolet detector, this structure adopts P type gallium nitride as active area, can effectively improve the external quantum efficiency of device.
A kind of PIN structure of the present invention gallium nitride-base ultraviolet detector is characterized in that, comprising:
One substrate;
One N type ohmic contact layer, this N type ohmic contact layer is produced on the substrate;
One active layer, this active layer are produced on the N type ohmic contact layer, and the area of this active layer is less than N type ohmic contact layer;
One Window layer, this Window layer is produced on the active layer;
One N type Ohmic electrode, this N type Ohmic electrode is produced on the N type ohmic contact layer;
One P type Ohmic electrode, this P type Ohmic electrode is produced on the Window layer.
Wherein this substrate is sapphire or silicon or carborundum or gallium nitride or GaAs material.
Wherein N type ohmic contact layer is a gallium nitride material, and its electron concentration is greater than 1 * 10 18Cm -3
Wherein active layer is a P type gallium nitride material, and its free carrier concentration is less than 1 * 10 16Cm -3
Wherein Window layer is a P type Al-Ga-N material, and its al composition is higher than the al composition of the gallium nitride material of active layer and N type ohmic contact layer.
Wherein N type Ohmic electrode is dot structure or loop configuration.
Wherein P type Ohmic electrode is dot structure or loop configuration.
The manufacture method of a kind of PIN structure of the present invention gallium nitride ultraviolet detector is characterized in that, comprises the steps:
Step 1: on substrate with epitaxial growth equipment growth N type ohmic contact layer;
Step 2: the active layer of on N type ohmic contact layer, growing;
Step 3: growth window layer on active layer;
Step 4: active layer, Window layer are carried out partial etching;
Step 5: on Window layer, make P type Ohmic electrode;
Step 6: on N type ohmic contact layer, make N type Ohmic electrode;
Step 7: with about substrate thinning to 100 μ m, carry out then that tube core is cut apart, pressure welding, be encapsulated at last on the shell, make PIN structure gallium nitride ultraviolet detector device.
Wherein substrate is sapphire or silicon or carborundum or gallium nitride or GaAs material.
Wherein N type ohmic contact layer is a gallium nitride material, and its electron concentration is greater than 1 * 10 18Cm -3
Wherein active layer is a P type gallium nitride material, and its free carrier concentration is less than 1 * 10 16Cm -3
Wherein Window layer is a P type Al-Ga-N material, and its al composition is higher than the al composition of the gallium nitride material of active layer and N type ohmic contact layer.
Wherein N type Ohmic electrode is dot structure or loop configuration.
Wherein P type Ohmic electrode is dot structure or loop configuration.
The present invention adopts the very low P type gallium nitride of free carrier concentration as active area, adds the higher P type Al-Ga-N material of layer of aluminum component then as Window layer on the active area of P type gallium nitride.The device overall structure is P-Al yGa 1-yN/P --Al xGa 1-xN/N +-Al xGa 1-xN (0≤x＜y≤1).Like this, when near the incident illumination wavelength is the energy of absorption edge of active area is mapped on the device, because Window layer does not absorb, incident light is directly absorbed by P type gallium nitride active layer, because the width of depletion region of this one deck is very wide, photo-generated carrier can fully be separated by internal electric field, forms photoelectric current, thereby has avoided the compound in a large number of photo-generated carrier.In addition on the one hand, because Window layer does not absorb photon, thereby avoided realizing the difficulty of P type ohmic contact.The external quantum efficiency of device is improved.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
The PIN structure gallium nitride-base ultraviolet detector structural representation that Fig. 1 the present invention proposes.
Embodiment
See also shown in Figure 1, a kind of PIN structure of the present invention gallium nitride-base ultraviolet detector, comprising:
One substrate 10, this substrate 10 are sapphire or silicon or carborundum or gallium nitride or GaAs material;
One N type ohmic contact layer 11, this N type ohmic contact layer is produced on the substrate 10, and this N type ohmic contact layer 11 is a gallium nitride material, and its electron concentration is greater than 1 * 10 18Cm -3
One active layer 12, this active layer 12 is produced on the N type ohmic contact layer 11, and the area of this active layer 12 is less than N type ohmic contact layer 11, and this active layer 12 is a P type gallium nitride material, and its free carrier concentration is less than 1 * 10 16Cm -3
One Window layer 13, this Window layer 13 is produced on the active layer 12, and this Window layer 13 is a P type Al-Ga-N material, and its al composition is higher than the al composition of the gallium nitride material of active layer 12 and N type ohmic contact layer 11;
One N type Ohmic electrode 14, this N type Ohmic electrode is produced on the N type ohmic contact layer 11, and this N type Ohmic electrode 14 is dot structure or loop configuration;
One P type Ohmic electrode 15, this P type Ohmic electrode is produced on the Window layer 13, and this P type Ohmic electrode 15 is dot structure or loop configuration.
Please shown in Figure 1 in conjunction with consulting again, the manufacture method of a kind of PIN structure of the present invention gallium nitride ultraviolet detector comprises the steps:
Step 1: with epitaxial growth equipment growth N type ohmic contact layer 11, this substrate 10 is sapphire or silicon or carborundum or gallium nitride or GaAs material on substrate 10;
Step 2: growth active layer 12 on N type ohmic contact layer 11, this N type ohmic contact layer 11 is a gallium nitride material, its electron concentration is greater than 1 * 10 18Cm -3
Step 3: growth window layer 13 on active layer 12, this active layer 12 is a P type gallium nitride material, its free carrier concentration is less than 1 * 10 16Cm -3
Step 4: active layer 12, Window layer 13 are carried out partial etching;
Step 5: make P type Ohmic electrode 15 on Window layer 13, this Window layer 13 is a P type Al-Ga-N material, and its al composition is higher than the al composition of the gallium nitride material of active layer 12 and N type ohmic contact layer 11, and this P type Ohmic electrode 15 is dot structure or loop configuration;
Step 6: make N type Ohmic electrode 14 on N type ohmic contact layer 11, this N type Ohmic electrode 14 is dot structure or loop configuration;
Step 7: substrate 10 is thinned to about 100 μ m, carries out then that tube core is cut apart, pressure welding, be encapsulated at last on the shell, make PIN structure gallium nitride ultraviolet detector device.
In order to further specify the structure of the PIN structure gallium nitride ultraviolet detector that the present invention proposes, we are that 165nm is that example illustrates this preparation of devices process (in conjunction with consulting Fig. 1) with the response device cut-off wavelength, specific as follows: with the sapphire is substrate 10, (thickness is 3 μ m, and electron concentration is 3 * 10 to grow N type GaN layer 11 successively with MOCVD equipment 18Cm -3), (thickness is 0.6 μ m to weak P type GaN active layer 12, and hole concentration is 5 * 10 15Cm -3), P type Al 0.1Ga 0.9(thickness is 0.1 μ m to N Window layer 13, and hole concentration is 1 * 10 17Cm -3).Make ledge structure with dry etching, expose N type GaN layer 11, make P type Ohmic electrode 15 (Ni/Au electrode), N type Ohmic electrode 14 (Ti/Al electrode) with technologies such as photoetching, plated films then.Wherein, be that 500 ℃, thermal annealing time are to realize transparency electrodes and improved P type ohmic contact characteristic in 5 minutes in temperature.Carry out at last that substrate thinning, tube core are cut apart, pressure welding, encapsulation, make PIN structure gallium nitride ultraviolet detector.
A kind of novel PIN structure gallium nitride-base ultraviolet detector that the present invention proposes, this device architecture adopt the P type gallium nitride layer of low carrier concentration as active area, effectively improve the external quantum efficiency of device.

Claims (13)

1, a kind of PIN structure gallium nitride-base ultraviolet detector is characterized in that, comprising:
One substrate;
One N type ohmic contact layer, this N type ohmic contact layer is produced on the substrate;
One active layer, this active layer are produced on the N type ohmic contact layer, and the area of this active layer is less than N type ohmic contact layer; This active layer is a P type gallium nitride material, and its free carrier concentration is less than 1 * 10 16Cm -3
One Window layer, this Window layer is produced on the active layer;
One N type Ohmic electrode, this N type Ohmic electrode is produced on the N type ohmic contact layer;
One P type Ohmic electrode, this P type Ohmic electrode is produced on the Window layer.
According to right 1 described PIN structure gallium nitride-base ultraviolet detector, it is characterized in that 2, wherein this substrate is sapphire or silicon or carborundum or gallium nitride or GaAs material.
3, according to right 1 described PIN structure gallium nitride-base ultraviolet detector, it is characterized in that wherein N type ohmic contact layer is a gallium nitride material, its electron concentration is greater than 1 * 10 18Cm -3
4, according to right 1 described PIN structure gallium nitride-base ultraviolet detector, it is characterized in that wherein Window layer is a P type Al-Ga-N material, its al composition is higher than the al composition of the gallium nitride material of active layer and N type ohmic contact layer.
5, according to right 1 described PIN structure gallium nitride-base ultraviolet detector, it is characterized in that wherein N type Ohmic electrode is dot structure or loop configuration.
6, according to right 1 described PIN structure gallium nitride-base ultraviolet detector, it is characterized in that wherein P type Ohmic electrode is dot structure or loop configuration.
7, a kind of manufacture method of PIN structure gallium nitride ultraviolet detector is characterized in that, comprises the steps:
Step 1: on substrate with epitaxial growth equipment growth N type ohmic contact layer;
Step 2: the active layer of on N type ohmic contact layer, growing;
Step 3: growth window layer on active layer;
Step 4: active layer, Window layer are carried out partial etching;
Step 5: on Window layer, make P type Ohmic electrode;
Step 6: on N type ohmic contact layer, make N type Ohmic electrode;
Step 7: with about substrate thinning to 100 μ m, carry out then that tube core is cut apart, pressure welding, be encapsulated at last on the shell, make PIN structure gallium nitride ultraviolet detector device.
According to the manufacture method of right 7 described PIN structure gallium nitride-base ultraviolet detectors, it is characterized in that 8, wherein substrate is sapphire or silicon or carborundum or gallium nitride or GaAs material.
According to the manufacture method of right 7 described PIN structure gallium nitride-base ultraviolet detectors, it is characterized in that 9, wherein N type ohmic contact layer is a gallium nitride material, its electron concentration is greater than 1 * 10 18Cm -3
According to the manufacture method of right 7 described PIN structure gallium nitride-base ultraviolet detectors, it is characterized in that 10, wherein active layer is a P type gallium nitride material, its free carrier concentration is less than 1 * 10 16Cm -3
According to the manufacture method of right 7 described PIN structure gallium nitride-base ultraviolet detectors, it is characterized in that 11, wherein Window layer is a P type Al-Ga-N material, its al composition is higher than the al composition of the gallium nitride material of active layer and N type ohmic contact layer.
According to the manufacture method of right 7 described PIN structure gallium nitride-base ultraviolet detectors, it is characterized in that 12, wherein N type Ohmic electrode is dot structure or loop configuration.
According to the manufacture method of right 7 described PIN structure gallium nitride-base ultraviolet detectors, it is characterized in that 13, wherein P type Ohmic electrode is dot structure or loop configuration.
CNB2004100743636A 2004-09-10 2004-09-10 Gallium nitride-base ultraviolet detector with PIN structure and production thereof Expired - Fee Related CN100454585C (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100568542C (en) * 2008-03-18 2009-12-09 苏州纳米技术与纳米仿生研究所 A kind of PIN type indoor temperature nucleus radiation detector and preparation method thereof
CN102569556B (en) * 2012-01-09 2015-09-02 厦门市三安光电科技有限公司 There is light-emitting diode and the manufacture method of high enabling n-type ohmic contact
CN102522468B (en) * 2012-01-09 2014-10-15 安徽三安光电有限公司 Light emitting diode with good n-type ohmic contact and manufacturing method thereof
US9397253B2 (en) 2012-01-09 2016-07-19 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode and manufacturing method therefor
CN106033105A (en) * 2015-03-09 2016-10-19 中国农业大学 Method for determining p-type AlGaN material
CN110676344B (en) * 2019-09-16 2021-02-19 深圳第三代半导体研究院 Double-response GaN ultraviolet detector and preparation method thereof
CN115274891A (en) * 2022-07-04 2022-11-01 深圳大学 Vacuum ultraviolet photoelectric detector and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020155634A1 (en) * 2001-04-20 2002-10-24 General Electric Company Homoepitaxial gallium nitride based photodetector and method of producing
US20040135222A1 (en) * 2002-12-05 2004-07-15 Research Foundation Of City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020155634A1 (en) * 2001-04-20 2002-10-24 General Electric Company Homoepitaxial gallium nitride based photodetector and method of producing
US20040135222A1 (en) * 2002-12-05 2004-07-15 Research Foundation Of City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures

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