CN101101935A - Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method - Google Patents
Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method Download PDFInfo
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- CN101101935A CN101101935A CNA2006101112620A CN200610111262A CN101101935A CN 101101935 A CN101101935 A CN 101101935A CN A2006101112620 A CNA2006101112620 A CN A2006101112620A CN 200610111262 A CN200610111262 A CN 200610111262A CN 101101935 A CN101101935 A CN 101101935A
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Abstract
The invention is concerned with the the ultraviolet (UV) detector to improve the GaN group pin structure performance. It includes substrate, the nucleation layer, the high pH indicator module N ohmic contact layer, the source layer, the GaN contact electrode, the ohmic contact layer and the ohmic contact electrode. The components are overlapping one with another from the bottom to the top follows the statement orderly, expect the point or ring structure ohmic contact electrode that is on the both sides above the ohmic contact layer.
Description
Technical field
The present invention relates to technical field of semiconductor device, be meant the ultraviolet detector and the manufacture method of a kind of raising gallium nitride (GaN) based Schottky structure performance especially.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) have huge using value with its spectral region wide (having covered from ultraviolet to infrared all band) in the optoelectronics field.The GaN ultraviolet detector is a kind of very important GaN base optical electronic part, and, military domain civilian in guided missile alarm, the detection of rocket plumage cigarette, ultraviolet communication, chemical and biological weapons detection, aircraft guidance, spaceship, fire monitoring etc. has important use to be worth.Compare with the Si ultraviolet detector, the GaN base ultraviolet detector because have that visible light is blind, quantum efficiency is high, the incomparable advantage of can under high temperature and causticity environment, working or the like, can accomplish that in actual applications false alarm rate is low, highly sensitive, antijamming capability is strong, be subjected to people's attention greatly.
At present, developed the GaN ultraviolet detector of multiple structures such as MSM (metal-semiconductor-metal) structure, Schottky junction structure, pin structure in the world, wherein Schottky junction structure has been subjected to people's attention owing to avoided the bigger P type GaN of difficulty.But because the existence of deep energy level, photo-generated carrier is easy at depletion region compound, thereby has reduced the external quantum efficiency of device, and in addition, these deep energy levels also can be aggravated tunnelling current, have increased noise, has hindered the practical application of device and further develops.
Summary of the invention
The object of the invention is, a kind of ultraviolet detector and manufacture method of the GaN of raising based Schottky structure performance have been proposed, this structure and method can reduce active area deep energy level defect density, thereby effectively reduce the compound and tunnelling current of photo-generated carrier, thereby have improved the performance of device.
A kind of ultraviolet detector that improves GaN based Schottky structure performance of the present invention is characterized in that device architecture comprises:
One substrate;
One nucleating layer, this nucleating layer is produced on the substrate;
The N type ohmic contact layer of one high concentration, this N type ohmic contact layer is produced on the nucleating layer;
One active layer, this active layer are produced on the centre above the N type ohmic contact layer;
One schottky junctions touched electrode, this schottky junctions touched electrode is produced on the active layer;
One Ohm contact electrode, this Ohm contact electrode is dots structure or loop configuration, is produced on the both sides above the ohmic contact layer.
Wherein substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
Wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
N type AlxGa 1-xN (0≤x≤1) material that wherein high N type ohmic contact layer is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3.
Wherein active layer is N type AlxGa 1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
A kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance of the present invention is characterized in that, may further comprise the steps:
(1) on substrate, utilize epitaxial growth equipment to grow into stratum nucleare;
(2) the high N type doping content ohmic contact layer of growth on nucleating layer;
(3) active layer of on high N type doping content ohmic contact layer, growing;
(4) with partial etching around the both sides of the active layer on the high N type doping content ohmic contact layer;
(5) on active layer, make N type Schottky electrode;
(6) both sides make N type Ohm contact electrode on high N type doping content ohmic contact layer;
(7) with substrate thinning;
(8) carry out tube core then and cut apart, be encapsulated on the shell, finish the making of gallium nitride-base ultraviolet detector.
Wherein said substrate is sapphire, silicon, gallium nitride, GaAs or carbofrax material.
Wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
N type AlxGa 1-xN (0≤x≤1) material that wherein high N type ohmic contact layer is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3.
Wherein active layer is N type AlxGa1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
Wherein N type Ohmic electrode is dots structure or loop configuration.
Wherein with substrate thinning to the 90-110 micron.
It (mainly is the Ga room that the method that the present invention proposes has reduced active area deep energy level defect density, Al room or the like), effectively raise GaN based Schottky structure UV detector performance, it is characterized in that, in GaN based Schottky structure material for detector structure active layer N--AlxGa 1-xN (0≤x≤1), take involuntary doping, result of study shows, a spot of Si mixes, can significantly increase the Ga room, point defect concentrations such as Al room, these defectives belong to deep energy level defect, can effectively reduce minority diffusion length and minority carrier life time, increase the recombination probability of photo-generated carrier.Simultaneously, these deep energy level point defects can also help to increase tunnelling probability, thereby have increased the dark current and the noise of device.And involuntary doping, but can significantly reduce the density of these point defects, so, the method of the raising GaN based Schottky structure UV detector performance that the present invention proposes, compound and the tunnelling probability of deep energy level point defect be can reduce, thereby the external quantum efficiency and the noise that has reduced device of device effectively raised photo-generated carrier.
Description of drawings
In order to further specify content of the present invention, below in conjunction with example and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the GaN based Schottky structure UV detector structure schematic diagram that the present invention is suitable for.
Fig. 2 is two kinds of device photoelectric flow pattern experimental results.Wherein, solid line represents that active area adopts the N--GaN layer optogalvanic spectra of involuntary doping, and dotted line represents that active area adopts the optogalvanic spectra of the N--GaN layer of light Si doping.
Fig. 3 is two kinds of device IV characteristic test results.Wherein, solid line represents that active area adopts the N--GaN layer IV characteristic curve dotted line of involuntary doping to represent that active area adopts the IV characteristic curve of the N--GaN layer of light Si doping.
Fig. 4 is the positron annihilation experimental result of two kinds of devices.Wherein, what square real point was represented is the Schottky junction structure device that active area adopts the N--GaN layer of involuntary doping, and dotted line represents that active area adopts the Schottky junction structure device of the N--GaN layer of light Si doping.
Embodiment
See also shown in Figure 1, a kind of ultraviolet detector that improves GaN based Schottky structure performance of the present invention, device architecture comprises:
One substrate 10, this substrate 10 is sapphire, silicon, carborundum, gallium nitride or GaAs material;
One nucleating layer 11, this nucleating layer 11 is produced on the substrate 10, and this nucleating layer 11 is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy;
The N type ohmic contact layer 12 of one high concentration, this N type ohmic contact layer 12 is produced on the nucleating layer 11, N type AlxGa1-xN (0≤x≤1) material that this high N type ohmic contact layer 12 is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3;
One active layer 13, this active layer 13 are produced on the centre above the N type ohmic contact layer 12, N type AlxGa1-xN (0≤x≤1) material that this active layer 13 is involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3;
One schottky junctions touched electrode 14, this schottky junctions touched electrode 14 is produced on the active layer 13;
One Ohm contact electrode 15, this Ohm contact electrode 15 is dots structure or loop configuration, is produced on the both sides above the ohmic contact layer 12.
Please consult shown in Figure 1ly again, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance is characterized in that, may further comprise the steps:
(1) utilize epitaxial growth equipment to grow into stratum nucleare 11 on substrate 10, described substrate 10 is sapphire, silicon, gallium nitride, GaAs or carbofrax material, and this nucleating layer 11 is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy;
(2) the high N type doping content ohmic contact layer 12 of growth on nucleating layer 11, N type AlxGa1-xN (0≤x≤1) material that this high N type ohmic contact layer 12 is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3;
(3) growth active layer 13 on high N type doping content ohmic contact layer 12, and the N type AlxGa1-xN that this active layer 13 is involuntary doping (0≤x1) material, its electron concentration is smaller or equal to 1 * 1017cm-3;
(4) with partial etching around the both sides of the active layer 13 on the high N type doping content ohmic contact layer 12;
(5) on active layer 13, make N type Schottky electrode 14;
(6) both sides make N type Ohm contact electrode 15 on high N type doping content ohmic contact layer 12, and this N type Ohmic electrode 15 is dots structure or loop configuration;
(7) with substrate 10 attenuates;
(8) carry out tube core then and cut apart, be encapsulated on the shell, finish the making of gallium nitride-base ultraviolet detector.
Wherein substrate 10 is thinned to the 90-110 micron.
Please shown in Figure 1 in conjunction with consulting again, the preparation process of the high performance GaN based Schottky structure UV detector that the present invention proposes is as follows: at silicon, sapphire, gallium nitride, GaAs or carbofrax material is substrate 10, utilize the equipment of MOCVD, MBE or other growth GaN materials to grow device architecture, this structure comprises nucleating layer 11, N type ohmic contact layer 12, active layer 13.Successively make schottky junctions touched electrode 14, Ohm contact electrode 15 with methods such as photoetching, plated films then, wherein, need thermal annealing to realize the Schottky transparency electrode and improve the Schottky contacts characteristic.Carry out attenuate at last again, cut apart, pressure welding, be packaged into the ultraviolet detector device.In device architecture, we take the N--AlxGa1-xN layer of involuntary doping as active layer 13, this layer has point defect densities such as less Ga room, Al room, thereby reduced the recombination probability and the tunnelling probability of photo-generated carrier, effectively raise device external quantum efficiency, reduced the noise of device.
We are that the GaN schottky junction structure UV detector of 365nm is the preparation process that example illustrates this device architecture with the response cut-off wavelength for the effect that further specifies this device architecture, specific as follows: utilizing MOCVD equipment is that substrate 10 grows device architecture with the sapphire, and this structure comprises that (thickness is that 3 μ m, electron concentration are 3 * 1018cm-3), (thickness is that 0.4 μ m, electron concentration are 2 * 1016cm-3) to active area N--GaN layer 13 for nucleating layer 11, N+-GaN layer 12.Die-size is 1.2mm * 1.2mm.Carve ledge structure with methods such as dry etchings, expose N+-GaN layer 11.Successively make N type schottky junctions touched electrode 14 (Ni/Au electrodes with methods such as photoetching, plated films then, wherein Ni, Au thickness are respectively 3nm, 5nm), N type Ohm contact electrode 15 (Ti/Al electrode), wherein, need realize the Schottky transparency electrode in 5 minutes and improve the Schottky contacts characteristic 500 ℃ of annealing.Carry out attenuate, cutting, pressure welding at last again, be packaged into the ultraviolet detector device example, wherein substrate can be thinned to the 90-110 micron.
We compare the performance of taking involuntary doping to do the GaN schottky junction structure UV detector of active area and taking light Si doping to do the GaN schottky junction structure UV detector of active area that the present invention proposes, and the result is as follows:
Fig. 2 is the optogalvanic spectra experimental result of two kinds of device architectures.Wherein, solid line represents that active area adopts the optogalvanic spectra of the N--GaN layer Schottky junction structure detector of involuntary doping, and dotted line represents that active area adopts the optogalvanic spectra of the N--GaN layer Schottky junction structure detector of light Si doping.
Fig. 3 is two kinds of device IV characteristic test results.Wherein, solid line represents that active area adopts the N--GaN layer Schottky junction structure detector IV characteristic curve of involuntary doping, and dotted line represents that active area adopts the Schottky junction structure detector IV characteristic curve of the N--GaN layer of light Si doping.
Fig. 4 is the positron annihilation experimental result of two kinds of devices.Wherein, what square real point was represented is the Schottky junction structure device that active area adopts the N--GaN layer of involuntary doping, and dotted line represents that active area adopts the Schottky junction structure device of the N--GaN layer of light Si doping.
From above-mentioned experimental result, do the schottky junction structure UV detector of active area than taking light Si to mix, the external quantum efficiency of taking involuntary doped layer to do the GaN schottky junction structure UV detector of active area that the present invention proposes has improved, dark current has reduced, and device performance is improved.
The present invention proposes the GaN based Schottky structure UV detector of taking involuntary doping to do active layer, experimental result shows that this layer can effectively reduce point defect densities such as Ga room, and device performance also is significantly improved.
Claims (12)
1, a kind of ultraviolet detector that improves GaN based Schottky structure performance is characterized in that device architecture comprises:
One substrate;
One nucleating layer, this nucleating layer is produced on the substrate;
The N type ohmic contact layer of one high concentration, this N type ohmic contact layer is produced on the nucleating layer;
One active layer, this active layer are produced on the centre above the N type ohmic contact layer;
One schottky junctions touched electrode, this schottky junctions touched electrode is produced on the active layer;
One Ohm contact electrode, this Ohm contact electrode is dots structure or loop configuration, is produced on the both sides above the ohmic contact layer.
2, a kind of ultraviolet detector that improves GaN based Schottky structure performance according to claim 1 is characterized in that, wherein substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
3, a kind of ultraviolet detector that improves GaN based Schottky structure performance according to claim 1 is characterized in that, wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
4, a kind of ultraviolet detector that improves GaN based Schottky structure performance according to claim 1, it is characterized in that, N type AlxGa 1-xN (0≤x≤1) material that wherein high N type ohmic contact layer is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3.
5, a kind of ultraviolet detector that improves GaN based Schottky structure performance according to claim 1 is characterized in that, wherein active layer is N type AlxGa 1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
6, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance is characterized in that, may further comprise the steps:
(1) on substrate, utilize epitaxial growth equipment to grow into stratum nucleare;
(2) the high N type doping content ohmic contact layer of growth on nucleating layer;
(3) active layer of on high N type doping content ohmic contact layer, growing;
(4) with partial etching around the both sides of the active layer on the high N type doping content ohmic contact layer;
(5) on active layer, make N type Schottky electrode;
(6) both sides make N type Ohm contact electrode on high N type doping content ohmic contact layer;
(7) with substrate thinning;
(8) carry out tube core then and cut apart, be encapsulated on the shell, finish the making of gallium nitride-base ultraviolet detector.
7, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance according to claim 6 is characterized in that wherein said substrate is sapphire, silicon, gallium nitride, GaAs or carbofrax material.
8, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance according to claim 6 is characterized in that, wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
9, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance according to claim 6, it is characterized in that, N type AlxGa 1-xN (0≤x≤1) material that wherein high N type ohmic contact layer is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3.
10, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance according to claim 6, it is characterized in that, wherein active layer is N type AlxGa 1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
11, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance according to claim 6 is characterized in that wherein N type Ohmic electrode is dots structure or loop configuration.
12, a kind of manufacture method that improves the ultraviolet detector of GaN based Schottky structure performance according to claim 6 is characterized in that, wherein with substrate thinning to the 90-110 micron.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101621066B (en) * | 2008-07-02 | 2011-06-01 | 中国科学院半导体研究所 | GaN-based solar-blind UV detector area array and manufacturing method thereof |
| CN101640227B (en) * | 2009-09-07 | 2012-12-05 | 中国科学院微电子研究所 | Self-gain solar-blind AlGaN ultraviolet detector and preparation method thereof |
| CN102832286A (en) * | 2012-09-12 | 2012-12-19 | 中国电子科技集团公司第三十八研究所 | Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof |
| CN103944534A (en) * | 2014-04-25 | 2014-07-23 | 中国科学院微电子研究所 | Digital phase shifter |
| CN104393093A (en) * | 2014-11-13 | 2015-03-04 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
| CN111564511A (en) * | 2020-05-19 | 2020-08-21 | 河北工业大学 | AlGaN-MSM detector structure based on polarization effect and preparation method thereof |
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2006
- 2006-08-17 CN CNA2006101112620A patent/CN101101935A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621066B (en) * | 2008-07-02 | 2011-06-01 | 中国科学院半导体研究所 | GaN-based solar-blind UV detector area array and manufacturing method thereof |
| CN101640227B (en) * | 2009-09-07 | 2012-12-05 | 中国科学院微电子研究所 | Self-gain solar-blind AlGaN ultraviolet detector and preparation method thereof |
| CN102832286A (en) * | 2012-09-12 | 2012-12-19 | 中国电子科技集团公司第三十八研究所 | Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof |
| CN102832286B (en) * | 2012-09-12 | 2015-04-08 | 中国电子科技集团公司第三十八研究所 | Two-operation-mode ultraviolet detector with vertical structure and preparation method thereof |
| CN103944534A (en) * | 2014-04-25 | 2014-07-23 | 中国科学院微电子研究所 | Digital phase shifter |
| CN104393093A (en) * | 2014-11-13 | 2015-03-04 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
| CN104393093B (en) * | 2014-11-13 | 2017-02-01 | 北京工业大学 | High-detectivity gallium-nitride-based Schottky ultraviolet detector using graphene |
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
| CN111564511A (en) * | 2020-05-19 | 2020-08-21 | 河北工业大学 | AlGaN-MSM detector structure based on polarization effect and preparation method thereof |
| CN111564511B (en) * | 2020-05-19 | 2023-03-21 | 河北工业大学 | AlGaN-MSM detector structure based on polarization effect and preparation method thereof |
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