CN101621066B - GaN-based solar-blind UV detector area array and manufacturing method thereof - Google Patents

GaN-based solar-blind UV detector area array and manufacturing method thereof Download PDF

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CN101621066B
CN101621066B CN2008101160407A CN200810116040A CN101621066B CN 101621066 B CN101621066 B CN 101621066B CN 2008101160407 A CN2008101160407 A CN 2008101160407A CN 200810116040 A CN200810116040 A CN 200810116040A CN 101621066 B CN101621066 B CN 101621066B
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ohmic contact
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contact layer
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CN101621066A (en
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颜廷静
苏艳梅
王国东
种明
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Abstract

The invention discloses a GaN-based solar-blind UV detector area array and a manufacturing method thereof. The GaN-based solar-blind UV detector area array comprises a substrate, a nucleating layer grown on the substrate, an N-type ohmic contact layer grown on the nucleating layer, an active layer grown on the N-type ohmic contact layer, a P-type ohmic contact layer grown on the active layer, a P-type ohmic contact electrode grown on the P-type ohmic contact layer, a secondary metal grown on the P-type ohmic contact electrode, an N-type ohmic contact electrode grown on the N-type ohmic contact layer and a passivation layer layer deposited on two sides of the N-type ohmic contact layer, the active layer, the P-type ohmic contact layer, the P-type ohmic contact electrode, the secondary metal and the N-type ohmic contact electrode.

Description

GaN based solar-blind UV detector area array and preparation method thereof
Technical field
The invention belongs to technical field of semiconductor device, be meant a kind of GaN based solar-blind UV detector area array and preparation method thereof especially.
Background technology
The ultraviolet detection technology all has a wide range of applications at aspects such as military and civilians.In the military affairs, in fields such as missile warning, aircraft guidance, confidential corespondence, chemical and biological weapons detection, all there is important use to be worth; On civilian, the demand of ultraviolet detector is arranged all at aspects such as naked light detection, biological medicine analysis, ozone monitoring, offshore oil prison, solar illumination monitoring, public security scoutings.Particularly when response wave band is in 200～280nm,, thereby form " day blind area (being also referred to as solar blind) " because the strong absorption of ozone layer makes the ultraviolet ray of this wave band can not arrive ground.If the ultraviolet warning system places non-solar-blind band with response wave band, owing to there is not natural daylight irradiation, background noise is very little, and false alarm rate can significantly reduce.
GaN as third generation semi-conducting material belongs to direct gap semiconductor, has advantages such as energy gap is big, electron saturation velocities is high, dielectric constant is little, and superior physical and chemical stability can be worked it under exacting terms, is fit to the multiple device of preparation.Its ternary alloy three-partalloy AlGaN particularly changes between 3.14～6.12eV continuously with the variation energy gap of Al component, and the corresponding wavelength scope is 200～365nm, is to make particularly one of the ideal material of solar-blind UV detector of ultraviolet detector.
Since the superior character of GaN and alloy thereof and aspect ultraviolet detection application prospects, GaN base ultraviolet detector particularly UV detector area array becomes one of present research focus.But because in the growth of high Al component AlGaN material, the making of P-AlGaN ohmic contact, and aspect such as face battle array manufacture craft exists difficulty, hindered the actual fabrication and the application of solar-blind UV detector area array.
Summary of the invention
The objective of the invention is to, a kind of GaN based solar-blind UV detector area array and preparation method thereof is provided, it can be used to realize ultraviolet imagery, improves the practicality of device.
The invention provides a kind of manufacture method of GaN based solar-blind UV detector area array, it is characterized in that, comprise the steps:
A kind of manufacture method of GaN based solar-blind UV detector area array is characterized in that, comprises the steps:
Step 1: be prepared into stratum nucleare, N type ohmic contact layer, active layer and P type ohmic contact layer on substrate successively, this nucleating layer is selected the aluminium nitride material of low-temperature epitaxy for use; This N type ohmic contact layer is selected heavily doped Al-Ga-N material for use, and wherein al composition is more than or equal to 0.45, and its electron concentration is greater than 1 * 10 18Cm -3This active layer is selected the N type Al-Ga-N material of involuntary doping for use, and wherein al composition is more than or equal to 0.45, and its electron concentration is less than 1 * 10 17Cm -3This P type ohmic contact layer is selected Al-Ga-N material for use, and wherein al composition is identical with al composition in the active layer, and its free carrier concentration is greater than 1 * 10 17Cm -3
Step 2: growth one P type Ohm contact electrode on P type ohmic contact layer;
Step 3: etching is carried out in the chip structure both sides that abovementioned steps prepares, and etching depth arrives N type ohmic contact layer, forms step-like structure;
Step 4: the shared N type Ohm contact electrode of growth on N type ohmic contact layer, the material selection titanium aluminium titanium of this N type Ohm contact electrode, electrode is a loop configuration, only draws at the face array edge, and is shared by all pixels;
Step 5: at the upper surface of the chip structure that abovementioned steps prepares and two outgrowth passivation layers of the step-like structure after the etching;
Step 6: photoetching on passivation layer, erode away fairlead, and in fairlead, above the P type Ohm contact electrode growth titanium double-level-metal;
Step 7: with substrate thinning to 150 micron, carry out tube core and cut apart, finish detector array and make.
Wherein the material selection sapphire or the aluminium nitride of substrate.
The material selection nickel billon of P type Ohm contact electrode wherein.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with example and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the material grown junction composition of this UV detector area array;
Fig. 2 obtains pixel structural representation behind the table top for etching;
Fig. 3 for element manufacturing finish after the pixel structural representation;
Fig. 4 is the face battle array schematic diagram of element manufacturing after finishing.
Embodiment
See also Fig. 1-Fig. 4, the invention provides a kind of GaN based solar-blind UV detector area array, comprising:
One substrate 10, the material of this substrate 10 are sapphire or aluminium nitride material;
One nucleating layer 20, this nucleating layer 20 is grown on the substrate 10, and this nucleating layer 20 is the aluminium nitride material of low-temperature epitaxy;
One N type ohmic contact layer 30, this N type ohmic contact layer 30 is grown on the nucleating layer 20, and this N type ohmic contact layer 30 is heavily doped Al-Ga-N material, P type ohmic contact layer 50 and the active layer 40 chatted after wherein al composition is higher than, its electron concentration is greater than 1 * 10 18Cm -3
One active layer 40, this active layer 40 are grown on the N type ohmic contact layer 30, the N type Al-Ga-N material that this active layer 40 is involuntary doping, and wherein al composition is more than or equal to 0.45, and its electron concentration is less than 1 * 10 17Cm -3
One P type ohmic contact layer 50, this P type ohmic contact layer 50 is grown on the active layer 40, this P type ohmic contact layer 50 is an Al-Ga-N material, wherein al composition is identical with active layer 40, its free carrier concentration greater than 1 * 1017cm -3, wherein N type ohmic contact layer 30, active layer 40 and P type ohmic contact layer 50 form the semi-conducting material of PIN type structure;
One P type Ohm contact electrode 60, this P type Ohm contact electrode 60 is grown on the P type ohmic contact layer 50, and the material of this P type Ohm contact electrode 60 is the nickel billon;
One secondary metals 70, these secondary metals 70 be grown in P type Ohm contact electrode 60 above, the material of these secondary metals 70 is the titanium double-level-metal;
One N type Ohm contact electrode 90, this N type Ohm contact electrode 90 is grown on the N type ohmic contact layer 30, the material of this N type Ohm contact electrode 90 is a titanium aluminium titanium multiple layer metal, electrode is a loop configuration, only draw at the face array edge, shared by all pixels, needn't in each pixel, draw respectively;
One passivation layer 80, this passivation layer 80 are deposited on the both sides of N type ohmic contact layer 30, active layer 40, P type ohmic contact layer 50, P type Ohm contact electrode 60, secondary metals 70 and N type Ohm contact electrode 90.
Please consult Fig. 1-Fig. 4 again, the invention provides a kind of growing method of GaN based solar-blind UV detector area array, comprise the steps:
Step 1: on substrate 10, be prepared into stratum nucleare 20, N type ohmic contact layer 30, active layer 40, P type ohmic contact layer 50 successively, this N type ohmic contact layer 30, active layer 40 and P type ohmic contact layer 50 form the semi-conducting material of PIN type structure, and the material of described substrate 10 is sapphire or aluminium nitride material; Described nucleating layer 20 is the aluminium nitride material of low-temperature epitaxy; Described N type ohmic contact layer 30 is heavily doped Al-Ga-N material, and wherein al composition is higher than P type ohmic contact layer 50 and active layer 40, and its electron concentration is greater than 1 * 10 18Cm -3The N type Al-Ga-N material that described active layer 40 is involuntary doping, wherein al composition is more than or equal to 0.45, and its electron concentration is less than 1 * 10 17Cm -3Described P type ohmic contact layer 50 is an Al-Ga-N material, and wherein al composition is identical with active layer 40, and its free carrier concentration is greater than 1 * 10 17Cm -3
Step 2: growth one P type Ohm contact electrode 60 on P type ohmic contact layer 50, the material of this P electrode metal 60 is the nickel billon, obtains chip structure;
Step 3: etching is carried out in the chip structure both sides that prepare, and etching depth arrives N type ohmic contact layer 30, forms step-like structure;
Step 4: the shared N type Ohm contact electrode 90 of growth on N type ohmic contact layer 30, the material of this N type Ohm contact electrode 90 is a titanium aluminium titanium multiple layer metal, electrode is a loop configuration, only draw at the face array edge, shared by all pixels, needn't in each pixel, draw respectively, obtain new chip structure;
Step 5: at the upper surface of chip structure and two outgrowth passivation layers 80 of the step-like structure after the etching;
Step 6: photoetching on passivation layer 80, erode away fairlead, and in fairlead, above the P type Ohm contact electrode 60 growth secondary metals 70, the material of these secondary metals 70 is the titanium double-level-metal;
Step 7: substrate 10 is thinned to 150 microns, carries out tube core and cut apart, finish detector array and make.
For further specifying a kind of GaN based solar-blind UV detector area array of the present invention and preparation method thereof, we are that 247nm is that example manufacturing process that this device is described is (in conjunction with consulting Fig. 1-Fig. 4) with the response device wavelength, specific as follows: with the sapphire is substrate 10, with MOCVD equipment grow low temperature (500 ℃) aln nucleation layer 20 (thickness is 0.8 μ m) successively, (material is Al to heavily doped N type ohmic contact layer 30 0.85Ga 0.15N, thickness are 0.6 μ m, and electron concentration is 3 * 10 18Cm -3), (material is Al for the N type active layer 40 of involuntary doping 0.65Ga 0.35N, thickness are 0.15 μ m, and electron concentration is 1 * 10 16Cm -3), (material is Al to P type ohmic contact layer 0.65Ga 0.35N, thickness are 0.3 μ m, and carrier concentration is 1 * 10 17Cm -3), wherein N type ohmic contact layer 30, active layer 40 and P type ohmic contact layer 50 form P-Al xGa L-xN/N-Al xGa L-xN/N+-Al yGa L-yThe semi-conducting material (seeing also Fig. 1) of N (0.45≤x＜y≤1) type structure, like this, when light incides on the detector by the back, the short light (＜225nm is by the numerical value decision of y) of wavelength is absorbed by N type ohmic contact layer 30, can not arrive active area 40 and produce response, the formation shortwave ends, the long light (＞255nm is by the numerical value decision of x) of wavelength can not cause the response of active layer 40, forms long wave cut-off function.Utilize technology growth one P type Ohm contact electrodes 60 on P type ohmic contact layer 50 such as photoetching, plated film, the material of this P electrode metal 60 is the nickel gold, and thickness is 5nm/5nm, and 500 ℃ of following short annealings 5 minutes to improve P electrode ohmic contact characteristic; Obtain terraced structure with dry etching then, etching depth is 0.5 μ m (seeing also Fig. 2); The shared N type Ohm contact electrode 90 of growth on N type ohmic contact layer 30 again, the material of this N type Ohm contact electrode 90 is a titanium aluminium titanium multiple layer metal, thickness is 15nm/200nm/40nm/250nm, electrode is a loop configuration, only draw at the face array edge, shared by all pixels, needn't in each pixel, draw respectively, obtain new chip structure; At the upper surface of chip structure and two outgrowth passivation layers 80 of the step-like structure after the etching; Photoetching on passivation layer 80, erode away fairlead, and in fairlead, above the P type Ohm contact electrode 60 growth secondary metals 70, the material of these secondary metals 70 is titanium double-level-metal (seeing also Fig. 3); At last substrate 10 is thinned to 150 microns, carries out tube core and cut apart, finish detector array and make (seeing also Fig. 4).
Only above-described, it only is preferred embodiment of the present invention, when can not limiting scope of the invention process with this, promptly every simple equivalent of being done according to the present patent application claim and invention description content changes and modifies, and all still belongs in the scope that claim of the present invention contains.

Claims (3)

1. the manufacture method of a GaN based solar-blind UV detector area array is characterized in that, comprises the steps:
Step 1: be prepared into stratum nucleare, N type ohmic contact layer, active layer and P type ohmic contact layer on substrate successively, this nucleating layer is selected the aluminium nitride material of low-temperature epitaxy for use; This N type ohmic contact layer is selected heavily doped Al-Ga-N material for use, and wherein al composition is more than or equal to 0.45, and its electron concentration is greater than 1 * 10 18Cm -3This active layer is selected the N type Al-Ga-N material of involuntary doping for use, and wherein al composition is more than or equal to 0.45, and its electron concentration is less than 1 * 10 17Cm -3This P type ohmic contact layer is selected Al-Ga-N material for use, and wherein al composition is identical with al composition in the active layer, and its free carrier concentration is greater than 1 * 10 17Cm -3
Step 2: growth one P type Ohm contact electrode on P type ohmic contact layer;
Step 3: etching is carried out in the chip structure both sides that abovementioned steps prepares, and etching depth arrives N type ohmic contact layer, forms step-like structure;
Step 4: the shared N type Ohm contact electrode of growth on N type ohmic contact layer, the material selection titanium aluminium titanium of this N type Ohm contact electrode, electrode is a loop configuration, only draws at the face array edge, and is shared by all pixels;
Step 5: at the upper surface of the chip structure that abovementioned steps prepares and two outgrowth passivation layers of the step-like structure after the etching;
Step 6: photoetching on passivation layer, erode away fairlead, and in fairlead, above the P type Ohm contact electrode growth titanium double-level-metal;
Step 7: with substrate thinning to 150 micron, carry out tube core and cut apart, finish detector array and make.
2. the manufacture method of GaN based solar-blind UV detector area array according to claim 1 is characterized in that, wherein the material selection sapphire or the aluminium nitride of substrate.
3. the manufacture method of GaN based solar-blind UV detector area array according to claim 1 is characterized in that, wherein the material selection nickel billon of P type Ohm contact electrode.
CN2008101160407A 2008-07-02 2008-07-02 GaN-based solar-blind UV detector area array and manufacturing method thereof Expired - Fee Related CN101621066B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102244146B (en) * 2011-07-01 2013-01-23 中国科学院半导体研究所 GaN-base ultraviolet detector area array which does not transmit infrared light and visible light
CN103682103B (en) * 2013-12-13 2016-02-24 浙江大学 Organic-inorganic composite day-blind type ultraviolet light detector
CN103682104B (en) * 2013-12-13 2016-03-23 浙江大学 Organic/nano sodium tantalate composite solar blind UV detector
JP6206159B2 (en) * 2013-12-17 2017-10-04 三菱電機株式会社 Manufacturing method of semiconductor device
CN109273553A (en) * 2018-09-29 2019-01-25 镇江镓芯光电科技有限公司 A kind of AlGaN base p-i-n solar blind ultraviolet detector and preparation method

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CN1681134A (en) * 2004-04-07 2005-10-12 中国科学院半导体研究所 Ultraviolet detector with gallium nitride Schottky structure and production thereof
CN1684275A (en) * 2005-02-28 2005-10-19 浙江大学 Thin film material for sunlight blind area ultraviolet detector and its producing method
CN101101935A (en) * 2006-07-06 2008-01-09 中国科学院半导体研究所 Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483130B1 (en) * 1999-03-24 2002-11-19 Honeywell International Inc. Back-illuminated heterojunction photodiode
CN1681134A (en) * 2004-04-07 2005-10-12 中国科学院半导体研究所 Ultraviolet detector with gallium nitride Schottky structure and production thereof
CN1684275A (en) * 2005-02-28 2005-10-19 浙江大学 Thin film material for sunlight blind area ultraviolet detector and its producing method
CN101101935A (en) * 2006-07-06 2008-01-09 中国科学院半导体研究所 Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method

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