CN101101934A - Ultraviolet detector for improving the performance of GaN base pin structure and its making method - Google Patents
Ultraviolet detector for improving the performance of GaN base pin structure and its making method Download PDFInfo
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Abstract
The invention is concerned with the ultraviolet (UV) detector to improve the GaN group pin structure performance. The device includes the substrate, the nucleation layer, the module N ohmic contact, the source layer, the module P ohmic contact and its contact electrode, and then ohmic contact electrode. The components are overlapping one with another from the bottom to the top follows the statement orderly. The module P and N ohmic contact electrode can shape in point or ring structure.
Description
Technical field
The present invention relates to technical field of semiconductor device, be meant the method for a kind of raising gallium nitride (GaN) base pin structure ultraviolet detector performance especially.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) have huge using value with its spectral region wide (having covered from ultraviolet to infrared all band) in the optoelectronics field.The GaN ultraviolet detector is a kind of very important GaN base optical electronic part, and, military domain civilian in guided missile alarm, the detection of rocket plumage cigarette, ultraviolet communication, chemical and biological weapons detection, aircraft guidance, spaceship, fire monitoring etc. has important use to be worth.Compare with the Si ultraviolet detector, the GaN base ultraviolet detector because have that visible light is blind, quantum efficiency is high, the incomparable advantage of can under high temperature and causticity environment, working or the like, can accomplish that in actual applications false alarm rate is low, highly sensitive, antijamming capability is strong, be subjected to people's attention greatly.
At present, developed the GaN ultraviolet detector of multiple structures such as MSM (metal-semiconductor-metal) structure, Schottky junction structure, pin structure in the world, wherein the pin structure is because advantage such as quantum efficiency height, dark current be little has been subjected to people's attention.But because the existence of deep energy level, photo-generated carrier is easy at depletion region compound, thereby has reduced the external quantum efficiency of device, in addition, these deep energy levels also can be aggravated tunnelling current and generation-recombination current, have increased noise, have hindered the practical application of device and further develop.
Summary of the invention
The object of the invention is, a kind of ultraviolet detector and manufacture method of the GaN of raising base pin structural behaviour have been proposed, this method can reduce active area deep energy level defect density, thereby reduce effectively that photo-generated carrier is compound, tunnelling current and generation-recombination current, thereby improved the performance of device.
A kind of ultraviolet detector that improves GaN base pin structural behaviour of the present invention is characterized in that device architecture comprises:
One substrate;
One nucleating layer, this nucleating layer is produced on the substrate;
One N type ohmic contact layer, this N type ohmic contact layer is produced on the nucleating layer;
One active layer, this active layer is produced on the centre above the ohmic contact layer;
One P type ohmic contact layer, this P type ohmic contact layer is produced on the active layer;
P type Ohm contact electrode, this P type Ohm contact electrode is dots structure or loop configuration, is produced on above the P type ohmic contact layer;
One N type Ohm contact electrode, this Ohmic electrode is dots structure or loop configuration, is produced on above the N type ohmic contact layer.
Wherein substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
Wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
Wherein N type ohmic contact layer is N type AlxGa1-xN (0≤x≤1) material of high electron concentration, and its electron concentration is more than or equal to 1 * 1018cm-3.
Wherein active layer is N type AlxGa1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
Wherein P type ohmic contact layer is P type AlxGa1-xN (0≤x≤1) material of high concentration, and its free hole concentration is more than or equal to 1 * 1017cm-3.
A kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour of the present invention is characterized in that, the device preparation may further comprise the steps:
(1) on substrate, utilize epitaxial growth equipment to grow into stratum nucleare;
(2) growth N type ohmic contact layer on nucleating layer;
(3) active layer of on N type ohmic contact layer, growing;
(4) growing P-type ohmic contact layer on active layer;
(5) with partial etching around active layer on the N type ohmic contact layer and the P type ohmic contact layer;
(6) the making P type Ohm contact electrode on P type ohmic contact layer;
(7) the making N type Ohm contact electrode on N type concentration layer;
(8) with substrate thinning;
(9) carry out tube core then and cut apart, be encapsulated on the shell, finish the making of gallium nitride-base ultraviolet detector.
Wherein said substrate is sapphire, silicon, gallium nitride, GaAs or carbofrax material.
Wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
Wherein N type ohmic contact layer is N type AlxGa1-xN (0≤x≤1) material of high electron concentration, and its electron concentration is more than or equal to 1 * 1018cm-3.
Wherein active layer is N type AlxGa1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
Wherein P type ohmic contact layer is P type AlxGa1-xN (0≤x≤1) material of high concentration, and its free hole concentration is more than or equal to 1 * 1017cm-3.
Wherein P type Ohm contact electrode is dots structure or loop configuration.
Wherein N type Ohm contact electrode 16 is dots structure or loop configuration.
Wherein with substrate thinning to the 90-110 micron.
It (mainly is the Ga room that the method that the present invention proposes has reduced active area deep energy level defect density, Al room or the like), effectively raise GaN base pin structure ultraviolet detector performance, it is characterized in that, in GaN base pin structure material for detector structure active layer N--AlxGa1-xN (0≤x≤1), take involuntary doping, result of study shows, a spot of Si mixes, can significantly increase the Ga room, point defect concentrations such as Al room, these defectives belong to deep energy level defect, can effectively reduce minority diffusion length and minority carrier life time, increase the recombination probability of photo-generated carrier.Simultaneously, these deep energy level point defects can also help to increase tunnelling probability and generation-recombination current, thereby have increased the dark current and the noise of device.And involuntary doping, but can significantly reduce the density of these point defects, so, the method of the raising GaN base pin structure ultraviolet detector performance that the present invention proposes, compound and the tunnelling probability of deep energy level point defect be can reduce, thereby the external quantum efficiency and the noise that has reduced device of device effectively raised photo-generated carrier.
Description of drawings
In order to further specify content of the present invention, below in conjunction with example and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the GaN base pin structure UV detector structure schematic diagram that the present invention is suitable for.
Fig. 2 is the positron annihilation experiment of two kinds of active areas.Wherein square solid dot is represented the GaN layer of involuntary doping, and hollow dots is represented the GaN layer that the light Si of variable concentrations mixes.
Embodiment
See also shown in Figure 1, a kind of ultraviolet detector that improves GaN base pin structural behaviour of the present invention, device architecture comprises:
One substrate 10, this substrate 10 is sapphire, silicon, carborundum, gallium nitride or GaAs material;
One nucleating layer 11, this nucleating layer 11 is produced on the substrate 10, and this nucleating layer 11 is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy;
One N type ohmic contact layer 12, this N type ohmic contact layer 12 is produced on the nucleating layer 11, N type AlxGa1-xN (0≤x≤1) material that this N type ohmic contact layer 12 is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3;
One active layer 13, this active layer 13 are produced on the centre above the ohmic contact layer 12, N type AlxGa1-xN (0≤x≤1) material that this active layer 13 is involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3;
One P type ohmic contact layer 14, this P type ohmic contact layer 14 is produced on the active layer 13, P type AlxGa1-xN (0≤x≤1) material that this P type ohmic contact layer 14 is a high concentration, its free hole concentration is more than or equal to 1 * 1017cm-3;
P type Ohm contact electrode 15, this P type Ohm contact electrode 15 is dots structure or loop configuration, is produced on above the P type ohmic contact layer 14;
One N type Ohm contact electrode 16, this Ohmic electrode 16 is dots structure or loop configuration, is produced on above the N type ohmic contact layer 12.
Please consult again shown in Figure 1, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour of the present invention, device preparation may further comprise the steps:
(1) utilize epitaxial growth equipment to grow into stratum nucleare 11 on substrate 10, this substrate 10 is sapphire, silicon, gallium nitride, GaAs or carbofrax material, and this nucleating layer 11 is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy;
(2) growth N type ohmic contact layer 12 on nucleating layer 11, N type AlxGa1-xN (0≤x≤1) material that this N type ohmic contact layer 12 is high electron concentration, its electron concentration is more than or equal to 1 * 1018cm-3;
(3) growth active layer 13 on N type ohmic contact layer 12, N type AlxGa1-xN (0≤x≤1) material that this active layer 13 is involuntary doping;
(4) growing P-type ohmic contact layer 14 on active layer 13, its electron concentration be smaller or equal to 1 * 1017cm-3, P type AlxGa1-xN (0≤x≤1) material that this P type ohmic contact layer 14 is a high concentration, and its free hole concentration is more than or equal to 1 * 1017cm-3;
(5) with partial etching around active layer 13 on the N type ohmic contact layer 12 and the P type ohmic contact layer 14;
(6) the making P type Ohm contact electrode 15 on P type ohmic contact layer 14, this P type Ohm contact electrode 15 is dots structure or loop configuration;
(7) the making N type Ohm contact electrode 16 on N type concentration layer 12, this N type Ohm contact electrode 16 is dots structure or loop configuration;
(8) with substrate 10 attenuates;
(9) carry out tube core then and cut apart, be encapsulated on the shell, finish the making of gallium nitride-base ultraviolet detector.
Wherein substrate 10 is thinned to the 90-110 micron.
In conjunction with consulting Fig. 1, the preparation process of the high performance GaN base pin structure ultraviolet detector that the present invention proposes is as follows: at silicon, sapphire, gallium nitride, GaAs or carbofrax material is substrate 10, utilize the equipment of MOCVD, MBE or other growth GaN materials to grow device architecture, this structure comprises nucleating layer 11, N type ohmic contact layer 12, active layer 13, P type ohmic contact layer 14.Successively make P type Ohm contact electrode 15, N type Ohm contact electrode 16 with methods such as photoetching, plated films then, wherein, need thermal annealing to activate the P type and improve the Schottky contacts characteristic.Carry out attenuate at last again, cut apart, pressure welding, be packaged into the ultraviolet detector device, substrate 10 can be thinned to the 90-110 micron.In device architecture, we take the N--AlxGa1-xN layer of involuntary doping as active layer 13, this layer has point defect densities such as less Ga room, Al room, thereby reduced the recombination probability and the tunnelling probability of photo-generated carrier, effectively raise device external quantum efficiency, reduced the noise of device.
We are that the GaN base pin structure ultraviolet detector of 365nm is the preparation process that example illustrates this device architecture with the response cut-off wavelength for the effect that further specifies this device architecture, specific as follows: utilizing MOCVD equipment is that substrate 10 grows device architecture with the sapphire, and this structure comprises that (thickness is that 3 μ m, electron concentration are 3 * 1018cm-3), (thickness is that 0.4 μ m, electron concentration are 2 * 1016cm-3), (thickness is that 0.1 μ m, electron concentration are 3 * 1017cm-3) to P-GaN layer 14 to active area N--GaN layer 13 for nucleating layer 11, N+-GaN layer 12.After material had been grown, 750 ℃ of thermal annealings activated the P type in 20 minutes.Die-size is 1.2mm * 1.2mm.Carve ledge structure with methods such as dry etchings, expose N+-GaN layer 12.Successively make P type Ohm contact electrode 15 (Ni/Au electrodes with methods such as photoetching, plated films then, wherein Ni, Au thickness are respectively 3nm, 5nm), N type Ohm contact electrode 16 (Ti/Al electrode), wherein, need improve ohmic contact characteristic in 5 minutes 500 ℃ of annealing.Carry out attenuate, cutting, pressure welding at last again, be packaged into the ultraviolet detector device example.
We take involuntary Doped GaN to do active layer and take the active layer positron annihilation experimental result of light Si Doped GaN to compare what the present invention proposed, and the result is as follows:
The positron annihilation experiment of two kinds of active areas of Fig. 2.Wherein square solid dot is represented the GaN layer of involuntary doping, and hollow dots is represented the GaN layer that the light Si of variable concentrations mixes.
Obviously, the S parameter of the GaN layer of involuntary doping is significantly less than the S parameter of the GaN layer of light Si doping, means that the Ga vacancy concentration of involuntary Doped GaN layer will be starkly lower than the GaN layer that light Si mixes.The Ga room is a kind of deep energy level point defect, can promote photo-generated carrier compound, increase tunnelling current and produce a recombination current, thereby reduced device performance.
From above-mentioned experimental result, than taking light Si Doped GaN to do active layer, the point defect density of taking involuntary Doped GaN layer to do active area that the present invention proposes obviously reduces, and device performance will improve.
The present invention proposes the GaN base pin structure ultraviolet detector of taking involuntary doping to do active layer, experimental result shows that this layer can effectively reduce point defect densities such as Ga room, and device performance will be significantly improved.
Claims (15)
1, a kind of ultraviolet detector that improves GaN base pin structural behaviour is characterized in that device architecture comprises:
One substrate;
One nucleating layer, this nucleating layer is produced on the substrate;
One N type ohmic contact layer, this N type ohmic contact layer is produced on the nucleating layer;
One active layer, this active layer is produced on the centre above the ohmic contact layer;
One P type ohmic contact layer, this P type ohmic contact layer is produced on the active layer;
P type Ohm contact electrode, this P type Ohm contact electrode is dots structure or loop configuration, is produced on above the P type ohmic contact layer;
One N type Ohm contact electrode, this Ohmic electrode is dots structure or loop configuration, is produced on above the N type ohmic contact layer.
2, a kind of ultraviolet detector that improves GaN base pin structural behaviour according to claim 1 is characterized in that, wherein substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
3, a kind of ultraviolet detector that improves GaN base pin structural behaviour according to claim 1 is characterized in that, wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
4, a kind of ultraviolet detector that improves GaN base pin structural behaviour according to claim 1, it is characterized in that, wherein N type ohmic contact layer is N type AlxGa 1-xN (0≤x≤1) material of high electron concentration, and its electron concentration is more than or equal to 1 * 1018cm-3.
5, a kind of ultraviolet detector that improves GaN base pin structural behaviour according to claim 1 is characterized in that, wherein active layer is N type AlxGa 1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
6, a kind of ultraviolet detector that improves GaN base pin structural behaviour according to claim 1, it is characterized in that, wherein P type ohmic contact layer is P type AlxGa 1-xN (0≤x≤1) material of high concentration, and its free hole concentration is more than or equal to 1 * 1017cm-3.
7, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour is characterized in that, the device preparation may further comprise the steps:
(1) on substrate, utilize epitaxial growth equipment to grow into stratum nucleare;
(2) growth N type ohmic contact layer on nucleating layer;
(3) active layer of on N type ohmic contact layer, growing;
(4) growing P-type ohmic contact layer on active layer;
(5) with partial etching around active layer on the N type ohmic contact layer and the P type ohmic contact layer;
(6) the making P type Ohm contact electrode on P type ohmic contact layer;
(7) the making N type Ohm contact electrode on N type concentration layer;
(8) with substrate thinning;
(9) carry out tube core then and cut apart, be encapsulated on the shell, finish the making of gallium nitride-base ultraviolet detector.
8, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7 is characterized in that wherein said substrate is sapphire, silicon, gallium nitride, GaAs or carbofrax material.
9, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7 is characterized in that, wherein nucleating layer is the gallium nitride material of low-temperature epitaxy or the aluminium nitride material of low-temperature epitaxy.
10, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7, it is characterized in that, wherein N type ohmic contact layer is N type AlxGa 1-xN (0≤x≤1) material of high electron concentration, and its electron concentration is more than or equal to 1 * 1018cm-3.
11, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7, it is characterized in that, wherein active layer is N type AlxGa 1-xN (0≤x≤1) material of involuntary doping, and its electron concentration is smaller or equal to 1 * 1017cm-3.
12, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7, it is characterized in that, wherein P type ohmic contact layer is P type AlxGa 1-xN (0≤x≤1) material of high concentration, and its free hole concentration is more than or equal to 1 * 1017cm-3.
13, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7 is characterized in that wherein P type Ohm contact electrode is dots structure or loop configuration.
14, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7 is characterized in that wherein N type Ohm contact electrode 16 is dots structure or loop configuration.
15, a kind of manufacture method that improves the ultraviolet detector of GaN base pin structural behaviour according to claim 7 is characterized in that, wherein with substrate thinning to the 90-110 micron.
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| CN102290478A (en) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | p-i-n-type unijunction InGaN solar cell |
| CN101640227B (en) * | 2009-09-07 | 2012-12-05 | 中国科学院微电子研究所 | Self-gain solar-blind AlGaN ultraviolet detector and preparation method thereof |
| CN104900731A (en) * | 2015-06-03 | 2015-09-09 | 中国科学院半导体研究所 | Infrared photoelectric detector and manufacturing method thereof |
| CN105374903A (en) * | 2015-12-22 | 2016-03-02 | 中国科学院半导体研究所 | Al<x>Ga<1-x>N-based ultraviolet detector and preparation method |
| CN105679779A (en) * | 2016-03-22 | 2016-06-15 | 中国电子科技集团公司第三十八研究所 | Red spot response detector |
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| CN102290478B (en) * | 2011-09-05 | 2016-03-09 | 中国电子科技集团公司第十八研究所 | A kind of p-i-n type unijunction InGaN solar cell |
| CN102290478A (en) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | p-i-n-type unijunction InGaN solar cell |
| CN104900731A (en) * | 2015-06-03 | 2015-09-09 | 中国科学院半导体研究所 | Infrared photoelectric detector and manufacturing method thereof |
| CN105374903B (en) * | 2015-12-22 | 2017-04-12 | 中国科学院半导体研究所 | Al＜x＞Ga＜1-x＞N-based ultraviolet detector and preparation method |
| CN105374903A (en) * | 2015-12-22 | 2016-03-02 | 中国科学院半导体研究所 | Al<x>Ga<1-x>N-based ultraviolet detector and preparation method |
| CN106997908A (en) * | 2016-01-22 | 2017-08-01 | 中国科学院物理研究所 | It can be seen that blind UV detector cells and array |
| CN105679779A (en) * | 2016-03-22 | 2016-06-15 | 中国电子科技集团公司第三十八研究所 | Red spot response detector |
| CN106960885A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of PIN structural UV photodetector and preparation method thereof |
| CN106960885B (en) * | 2017-05-02 | 2018-07-06 | 常熟理工学院 | A kind of PIN structural UV photodetector and preparation method thereof |
| CN108305907A (en) * | 2018-01-26 | 2018-07-20 | 中国电子科技集团公司第三十八研究所 | A kind of novel homojunction PIN ultraviolet detectors |
| CN113948604A (en) * | 2021-10-18 | 2022-01-18 | 中国科学院长春光学精密机械与物理研究所 | Three-dimensional structure high-gain AlGaN solar blind ultraviolet detector and preparation method thereof |
| CN113948604B (en) * | 2021-10-18 | 2024-05-17 | 中国科学院长春光学精密机械与物理研究所 | Three-dimensional structure high-gain AlGaN solar blind ultraviolet detector and preparation method thereof |
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