CN107910402A - A kind of indium-gallium-arsenide infrared detector material preparation method - Google Patents
A kind of indium-gallium-arsenide infrared detector material preparation method Download PDFInfo
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- CN107910402A CN107910402A CN201710508453.9A CN201710508453A CN107910402A CN 107910402 A CN107910402 A CN 107910402A CN 201710508453 A CN201710508453 A CN 201710508453A CN 107910402 A CN107910402 A CN 107910402A
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- 239000000463 material Substances 0.000 title claims abstract description 37
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 99
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 69
- 230000012010 growth Effects 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 230000007547 defect Effects 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 5
- -1 aluminium arsenic Chemical compound 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000011946 reduction process Methods 0.000 abstract description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000004064 recycling Methods 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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Abstract
The invention discloses a kind of preparation method of indium-gallium-arsenide infrared detector part material, including：1) in indium phosphide donor substrate Epitaxial growth cushion；2) indium aluminium arsenic sacrifice layer is formed on the buffer layer, and InP epitaxial thin layers are formed on sacrifice layer；3) InAlAs sacrifice layers and InP epitaxial thin layers are formed on epitaxial thin layer；4) repeat step 3) to obtaining N number of InAlAs sacrifice layers and InP epitaxial thin layers；5) ion implanting is carried out from epitaxial thin layer side, form defect layer in the sacrifice layer of most last layer, after the epitaxial thin layer of most last layer is bonded with silicon receptor substrate, and made annealing treatment, top film is peeled off, the InAlAs sacrifice layers on released part surface are surface-treated；Repeat this step and obtain N number of Si bases InP flexible substrates and the InP donor substrates containing sacrifice layer；6) InGaAs panel detector structure epitaxial growths are carried out on flexible substrates.The present invention for substrate repeat utilization, flexible substrate can large-scale integrated, save the indium-gallium-arsenide infrared detector part preparation method of reduction process.
Description
Technical field
The invention belongs to indium gallium arsenic infrared detection technique application field, and in particular to a kind of donor substrate repeat utilization,
Flexible substrate can large-scale integrated, save the indium-gallium-arsenide infrared detector part material preparation method of reduction process.
Background technology
Infrared acquisition is a kind of technology for obtaining object infra-red radiation information, utilizes object various pieces infra-red radiation difference
Imaging, people can perceive region invisible to the naked eye.Therefore infrared detector is in national defense safety, space flight and aviation, environment prison
Survey and civil field is respectively provided with major application.Indium gallium arsenic (InGaAs) is a kind of excellent infrared detecting materials of photoelectric properties,
Investigative range is mainly 900-2500 nanometers of near infrared band, and material for detector extension generally directly in InP substrate is given birth to
Long, epitaxial material uniformity and stability are preferable.InGaAs detectors can work at room temperature, and detectivity is high, dark current
Density is low, is also widely used in the civil fields such as fiber optic communication at present.By III-V photoelectric devices be integrated in microelectronic technique into
Merging for photoelectron and microelectronics can be realized on ripe Si substrates, many new applications can not only be brought, and lining can also be saved
Bottom and process costs.It is InP substrate more than twice in addition, the good heat conductivity of Si substrates, therefore Si base InGaAs detectors
Thermal impedance is smaller, can obtain the saturation current density of higher, increases the dynamic range of detection.At present, make on a si substrate
InGaAs detector most straightforward approach is bonding chip, i.e., InGaAs material for detector is grown first in InP substrate, then
InGaAs detectors front is bonded on Si substrates, InP substrate is removed by reduction process, preparation process is complicated, and exists
The shortcomings of InP substrate wastes and is of high cost.Another heterogeneous integrated approach is directly on a si substrate epitaxial growth InGaAs
Infrared detector, but due to the lattice mismatch (8%) of InP and Si, need to before material for detector layer extension growth structure
The InGaP structures of more complicated cushion, such as more layer component alternations.
Except epitaxial growth, ion beam lift-off technology (referring to patent document CN105957831) is also heterogeneous integrated work
The common methods of skill.Ion beam lift-off technology is the cutting technique for injecting ions into defect project and the layer turn based on bonding chip
Shifting technology combines, and is heterogeneous integrated common method.Thin layer is cut and shifted to the method to relatively just in single crystalline substrate
In suitable foreign substrate, there is certain economic benefit.For ion beam lift-off technology, first ion implanting (hydrogen ion or
Person's helium ion) produce a Gaussian Profile, one specifically parallel at surface location (injection ion concentration maximum or
Lattice injures maximum) defect layer is formed, the chip being ion implanted in subsequent annealing process will split along defect layer.Will
III-V thin layers, which are bonded on Si substrates, can form flexible substrate.Flexible substrate is to study very popular topic all the time.
The epitaxial layer of usual lattice mismatch is grown in substrate surface forming core, when epitaxial layer exceedes critical thickness, can produce threading dislocation
Extend through whole epitaxial layer.According to flexible substrate material, since epitaxy layer thickness is more than flexible substrate when threading dislocation produces
Thickness, the threading dislocation of generation slide into flexible substrate, are finally terminating at formation interface at fexible film and epitaxial layer interface
Dislocation, does not have threading dislocation in epitaxial layer, crystalline quality of material greatly improves, this has greatly the big mismatched material of epitaxial growth
Place.Because silicon is a kind of good Heat Conduction Material, it can also alleviate the heat mistake of epitaxial material and substrate material using silicon substrate flexible substrate
With problem.
The content of the invention
, should it is an object of the present invention to providing a kind of inexpensive InGaAs infrared detector material preparation methods
Method realizes the epitaxial structures growth of InGaAs detectors using Si base InP flexible substrates.
Present invention the defects of being peeled off using InAlAs ion beam layer or sacrifice layer, after stripping using to sacrifice layer and
InP has the reagent cleaning sacrifice layer of good etch selectivities so that donor substrate part and receptor substrate part surface are clean
It is smooth, there is provided Si base InP flexible substrates are directly used in the preparation of InGaAs infrared detectors material, with respect to other heterogeneous integrated sides
Method have it is simple in structure, be not required to be thinned InP substrate advantage.InP donor substrates after stripping can also reuse repeatedly with
Si substrate bondings form larger size Si base InP flexible substrates, can be used for large scale InGaAs infrared detector material systems
It is standby.
Indium-gallium-arsenide infrared detector part material preparation method provided by the invention, including：
1) in indium phosphide donor substrate Epitaxial growth cushion；
2) formed on the buffer layer with the matched indium aluminium arsenic sacrifice layer of buffer layer lattice, the formation InP extensions on sacrifice layer
Thin layer；
3) InAlAs sacrifice layers and InP epitaxial thin layers are formed on epitaxial thin layer；
4) repeat step 3) to obtaining N number of InAlAs sacrifice layers and InP epitaxial thin layers；The N is whole more than or equal to 2
Number；
5) ion implanting is carried out from the epitaxial thin layer side of most last layer, defect is formed in most surface InAlAs sacrifice layers
Layer, after be bonded the processed semiconductor wafer and silicon receptor substrate are positive, and the bonding structure is moved back
Fire processing, makes top film be peeled off along InAlAs sacrifice layers from InP donor substrates, to the InAlAs sacrifice layers on released part surface
Carry out surface treatment and form Si base InP flexible substrates；This step is repeated to obtaining N number of Si bases InP flexible substrates and containing sacrifice layer
InP donor substrates；
6) InGaAs panel detector structure epitaxial growths are carried out in InP flexible substrates.
As a kind of better choice of the above method, the indium phosphide donor substrate obtains to remove the step 5) after sacrifice layer
The donor substrates of InP containing sacrifice layer obtained.
As a kind of better choice of the above method, between sacrificial layer thickness 200nm to the 1200nm.Art technology
Personnel can further growth selection 200-300,300-500,500-700 or 700-1000nm as needed sacrifice layer.
As a kind of better choice of the above method, the ion implanting depth is more than most top layer InP epitaxial thin layers
Thickness, less than the most thickness of top layer InP epitaxial thin layers and the summation of most top layer InAlAs sacrificial layer thickness.
As a kind of better choice of the above method, at the surface after the most top layer InAlAs sacrifice layers are peeling-off
Reason process is that InAlAs is corroded, but to the incorrosive wet etchings of InP or other chemical methodes, the remnants of InAlAs sacrifice layers
Thing easy to clean.
As a kind of better choice of the above method, the Si substrates are bonded with multiple InP donor substrates and realize that InP is soft
Property substrate size expand.
As a kind of better choice of the above method, the InGaAs infrared detectors of step 6) epitaxial growth are with heterogeneous
Knot, Quantum Well or superlattice structure.
As a kind of better choice of the above method, the InGaAs infrared detectors of step 6) epitaxial growth have PIN junction
Structure.
As a kind of better choice of the above method, cushion, sacrifice layer, epitaxial thin layer and InGaAs panel detector structures lead to
Cross molecular beam epitaxy, chemical vapor deposition and/or growth by liquid phase epitaxy method.
As a kind of better choice of the above method, cushion and the donor substrate material identical, is InP cushions,
Thickness is between 200nm to 1000nm.Those skilled in the art can further growth selection 200-300,300- as needed
500th, the cushion of 500-700 or 700-1000nm.
As a kind of better choice of the above method, semiconductive thin film depth of cover scope 10nm to the 1000nm it
Between.Those skilled in the art can further growth selection 10-50,50-100,100-200,200-300,300- as needed
500th, the semiconductor film layer of 500-700 or 700-1000nm.
As a kind of better choice of the above method, the receptor substrate is 30-60% to the transmitance of infrared light.It is described
The receptor substrate for being used to be bonded it is transparent to detector infrared band or absorptivity is very low, such as silicon (Si) and germanium (Ge).It is described
The receptor substrate for being used to be bonded it is transparent to detector infrared band or absorptivity is very low, such as 0.5 millimeter of adoptable material
Thick silicon (Si), the infrared light transmittance of its 1.5~10 micron waveband at room temperature is close to 50%.
After carrying out annealing steps in the above method, top layer InP films are shelled along InAlAs sacrifice layers from InP donor substrates
From sacrifice layer is the InAlAs easily corroded by solvent selectivity, so as to obtain the Si base heteroepitaxial structures of clean surface
With repeatable utilization and the InP donor substrate structures of clean surface.
The present invention is chosen to the selective corrosion of InAlAs and InP afterwards using InAlAs sacrifice layer, slabbing
Remaining InAlAs sacrifice layers, obtained silicon substrate material and semiconductor substrate materials clean surface are cleared up in agent, there is provided Si bases InP
Flexible substrate, while saving reduction steps, which can also reuse, energy conservation and environmental protection.And by the party
The InP flexible substrates that method provides are used directly for the epitaxial growth of InGaAs material for detector, it is not necessary to which epitaxial growth is complicated
Buffer layer structure.It can be overcome currently by the large scale flexible substrate repeatedly bonded together to form on same Si host substrates
The size-constrained Difficulty of InP substrate, meets large scale InGaAs focal plane arrays (FPA)s (FPAs) detector extension demand.
The InAlAs that the heterogeneous integrated middle use of Si bases of the present invention is easily selectively corroded simply is easy to as sacrifice layer, method
Realize, available in the conventional heterogeneous integrated technique of Si bases.In this way, successfully InP films can be transferred to
While Si base substrates, further simplify technique, there is provided Si base flexible substrate InGaAs material for detector is realized while growth
InP donor substrates reuse.
The present invention has following beneficial effect：
1) InAlAs that the heterogeneous integrated middle use of Si bases InGaAs of the invention is easily selectively corroded, can as sacrifice layer
So that donor substrate and receptor substrate clean surface are smooth after slabbing, and realize that InP donor substrates reuse, reduce
InGaAs detectors manufacture cost, energy conservation and environmental protection；
2) receptor substrate surface InP films serve as the epitaxial growth that flexible substrate is used directly for InGaAs detectors,
The residual stress in subsequent epitaxial layer is reduced, improves crystal quality, this is for lifting Si base InGaAs detector performances, particularly
Expand wavelength InGaAs detectors (2.5 microns), play the role of it is important, and simplify technique, it is easy to accomplish；
3) in late stage process, substrate thinning technique is saved, substantially reduces cost, further simplifies technique；Finally, can be with
Repeatedly bonding is realized on single Si substrates, it is of great advantage to development large scale InGaAs FPAs detectors.
Brief description of the drawings
Fig. 1 a-1f are the structure chart of the intermediate product in preparation flow each stage of the present invention；
Fig. 2 is a kind of structure diagram of InGaAs FPAs detectors.
Embodiment
Illustrate embodiments of the present invention below by way of specific embodiment, those skilled in the art can be by this specification institute
The content of exposure understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific implementations
Mode is embodied or practiced, and the various details in this specification can also be based on different viewpoints and application, without departing from this
Various modifications or alterations are carried out under the spirit of invention.
Illustrate to pass through exemplified by technique that is heterogeneous integrated and then growing InGaAs material for detector by InP and Si base substrates below
Using easily by the InAlAs that citric acid and hydrogen peroxide solution-selective corrodes as sacrifice layer realize donor substrate recycling, acceptor
Material is directly used in the processing step of InGaAs material for detector epitaxial growths, these structures and preparation process can be promoted directly
To other kinds of Si bases substrate it is heterogeneous it is integrated in, its concrete structure can be as shown in Figure 2.Concrete technology step is as follows：
(1) 500nm InP cushions are grown in InP substrate；
(2) the InAlAs sacrifice layers of 600nm are grown on the buffer layer；
(3) the InP film cap rocks of 200nm are grown on sacrifice layer；
(4) Fig. 1 a are referred to, are repeated in 9 formation donor substrates of growth 600nm InAlAs/200nm InP；
(5) Fig. 1 b are referred to, hydrogen ion injection is carried out from donor substrate top, the energy of ion implanting is 1KeV-3MeV,
Dosage is 1 × 1015/cm2-5×1017/cm2(the injection depth that can reach 700nm)；
(6) Fig. 1 c are referred to, silicon substrate are bonded with said structure, bonding temperature is room temperature；
(7) said structure is annealed at 250 DEG C；
(8) Fig. 1 d are referred to, slabbing separation occurs after annealing and realizes transfer of the InP thin layers to silicon substrate, by donor substrate
It is positioned over citric acid：Hydrogen peroxide=3:In 1 corrosive agent, deionized water or high pure nitrogen cleaning table are used after sacrifice layer decomposition
Face, at most repeatable step (5)-(8) realize that large scale shifts 9 times；
(9) Fig. 1 e and Fig. 1 f are referred to, receptor substrate is positioned over citric acid：Hydrogen peroxide=3:In 1 corrosive agent, treat sacrificial
Domestic animal layer clears up surface with deionized water or high pure nitrogen after decomposing and forms Si base InGaAs flexible substrates；
(10) Fig. 2 is referred to, InGaAs panel detector structure materials are carried out in Si bases InGaAs flexible substrates obtained above
Growth, is followed successively by InP cushions, and thickness 200nm, N+ doping concentration are 1.5 × 1018/cm3Lower doped layer, thickness is
500nm, the InGaAs absorbed layers to undope, thickness is 1 μm and P+ doping concentrations are 1 × 1019The upper doped layer of/cm3, thickness
For 500nm.
It should be noted last that the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, it is above-mentioned
Various parameters are those skilled in the art's adjustable content as needed, such as select the Si substrates, different of different-thickness
Buffer layer thickness, sacrificial layer thickness and the suitable sacrifice layer of selection simultaneously adjust the corresponding method for removing sacrifice layer.
Although the present invention is described in detail with reference to embodiment, it will be understood by those of ordinary skill in the art that, it is right
Technical scheme technical scheme is modified or replaced equivalently, without departure from the spirit and scope of technical solution of the present invention, its is equal
It should cover among scope of the presently claimed invention.
Claims (8)
1. a kind of indium-gallium-arsenide infrared detector part material preparation method, including：
1) in indium phosphide donor substrate Epitaxial growth cushion；
2) indium aluminium arsenic sacrifice layer is formed on the buffer layer, and InP epitaxial thin layers are formed on sacrifice layer；
3) InAlAs sacrifice layers and InP epitaxial thin layers are formed on epitaxial thin layer；
4) repeat step 3) to obtaining N number of InAlAs sacrifice layers and InP epitaxial thin layers；
5) ion implanting is carried out from the epitaxial thin layer side of most last layer, defect layer is formed in the InAlAs sacrifice layers of most surface,
The processed semiconductor wafer is bonded with silicon receptor substrate front afterwards, and the bonding structure is carried out at annealing
Reason, makes top film be peeled off along InAlAs sacrifice layers from InP donor substrates, and the InAlAs sacrifice layers on released part surface are carried out
Surface treatment forms Si base InP flexible substrates；Repeat this step and supplied to N number of Si bases InP flexible substrates and InP containing sacrifice layer is obtained
Body substrate；
6) InGaAs panel detector structure epitaxial growths are carried out in InP flexible substrates.
2. indium-gallium-arsenide infrared detector part material preparation method according to claim 1, it is characterised in that：The indium phosphide
The donor substrates of InP containing sacrifice layer that donor substrate obtains for the step 5) after removal sacrifice layer.
3. indium-gallium-arsenide infrared detector part material preparation method according to claim 1 or 2, it is characterised in that：Described
Ion implanting depth is more than the thickness of most top layer InP epitaxial thin layers, less than the most thickness of top layer InP epitaxial thin layers and most top layer
The summation of InAlAs sacrificial layer thickness.
4. indium-gallium-arsenide infrared detector part material preparation method according to claim 1 or 2, it is characterised in that it is described most
Surface treatment process after top layer InAlAs sacrifice layers are peeling-off is that InAlAs is corroded, but to the incorrosive wet methods of InP
Corrosion.
5. the preparation method of indium-gallium-arsenide infrared detector part material according to claim 1 or 2, it is characterised in that：It is described
Si substrates be bonded with multiple InP donor substrates realize InP flexible substrates size expand.
6. the preparation method of indium-gallium-arsenide infrared detector part material according to claim 1 or 2, it is characterised in that：Step
6) the InGaAs panel detector structures of epitaxial growth are hetero-junctions, Quantum Well or superlattice structure.
7. the preparation method of indium-gallium-arsenide infrared detector part material according to claim 1 or 2, it is characterised in that：Step
6) the InGaAs panel detector structures of epitaxial growth have PIN structural.
8. indium-gallium-arsenide infrared detector part material preparation method according to claim 1 or 2, it is characterised in that：Cushion,
Sacrifice layer, epitaxial thin layer and InGaAs panel detector structures pass through molecular beam epitaxy, chemical vapor deposition and/or liquid phase epitaxy method
Growth.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600417A (en) * | 2019-08-02 | 2019-12-20 | 中国科学院微电子研究所 | Epitaxial transfer method on GaAs substrate and manufactured semiconductor device |
| CN112951940A (en) * | 2021-04-23 | 2021-06-11 | 湖南汇思光电科技有限公司 | InGaAs detector structure based on InPOI substrate and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH03153021A (en) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | Manufacture of semiconductor device |
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| CN110600417A (en) * | 2019-08-02 | 2019-12-20 | 中国科学院微电子研究所 | Epitaxial transfer method on GaAs substrate and manufactured semiconductor device |
| CN112951940A (en) * | 2021-04-23 | 2021-06-11 | 湖南汇思光电科技有限公司 | InGaAs detector structure based on InPOI substrate and preparation method |
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| CN107910402B (en) | 2020-07-17 |
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