CN105405913A - Low dark current InGaAs detector and preparation method thereof - Google Patents
Low dark current InGaAs detector and preparation method thereof Download PDFInfo
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- CN105405913A CN105405913A CN201510928646.0A CN201510928646A CN105405913A CN 105405913 A CN105405913 A CN 105405913A CN 201510928646 A CN201510928646 A CN 201510928646A CN 105405913 A CN105405913 A CN 105405913A
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- inp
- dark current
- cap layers
- layer
- passivation layer
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims description 14
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052738 indium Inorganic materials 0.000 claims description 24
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a low dark current InGaAs detector. The low dark current InGaAs detector comprises a second electrode, an N-type InP substrate and an intrinsic InP buffer layer, all of which are arranged in a stacking manner; an InGaAs photosensitive layer is directly formed on the InP buffer layer; an InP cap layer and a passivation layer grown in an extensional mode are arranged on the InGaAs photosensitive layer in the stacking manner; the area of the InP cap layer is smaller than or equal to that of the InGaAs photosensitive layer; a through hole for exposing partial region of the InP cap layer is formed in the passivation layer; and a first annular electrode is formed along the inner sidewall of the through hole. The film-forming quality of the passivation layer prepared through the extensional mode is much higher than that of the passivation layer prepared by a traditional technology, so that the dark current of the InGaAs detector can be reduced greatly, and the sensitivity can be improved.
Description
Technical field
The present invention relates to photodetector technical field, indium gallium arsenic detector being specifically related to a kind of low-dark current and preparation method thereof.
Background technology
Indium gallium arsenic detector has two kinds of technology paths, planar device and mesa devices at present.Planar device is because in technical process, and indium gallium arsenic uptake zone is protected well by epitaxial loayer, generally has lower dark current, therefore applies wider.But the manufacture craft of planar type detector is comparatively complicated, the formation of its PN junction needs to rely on diffusion or ion implantation, and distributed mass and the interface steep of doping content also can not show a candle to direct epitaxial growth, have impact on the performance of detector.Mesa detector is compared mutually, and manufacture craft is more simple, but needs to carry out mesa etch in technical process, and the indium gallium arsenic uptake zone sidewall come out, needs to carry out extraordinary passivation, could reduce dark current as much as possible.The passivation mode of current employing comprises silicon nitride, polyimides etc., although can reduce dark current greatly, because the restriction of thin film-forming method, the device dark electric current of preparation is still larger.
Summary of the invention
For this reason, to be solved by this invention is the excessive problem of indium-gallium-arsenic plane type detector dark current, thus indium gallium arsenic detector that a kind of low-dark current is provided and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of low-dark current indium gallium arsenic detector of the present invention, comprise the second electrode of stacked setting, N-type InP substrate and eigen I nP resilient coating, described InP resilient coating is directly formed with InGaAs photosensitive layer, stackedly on described InGaAs photosensitive layer be provided with InP cap layers and the passivation layer by epitaxial growth, described InP cap layers area is less than or equal to the area of described InGaAs photosensitive layer; Offer the through hole exposing described InP cap layers subregion in described passivation layer, form annular first electrode along described through hole madial wall.
Preferably, the energy gap of described passivation material need be greater than the energy gap of photosensitive layer InGaAs.
Preferably, described passivation material is the InAlAs by epitaxial growth.
Described passivation layer covers the sidewall of described InGaAs photosensitive layer, described InP cap layers and described InP resilient coating.
Described InP cap layers is also directly provided with the anti-reflection layer at least covering described second electrode middle section, for reducing the reflection ray of described InP cap layers.
The preparation method of low-dark current indium gallium arsenic detector of the present invention, comprises the steps:
S1, in N-type InP substrate the nP of epitaxial growth eigen I successively resilient coating, eigen I nGaAs photosensitive layer and P type InP cap layers;
S2, buffer layer patterning to InGaAs photosensitive layer, InP cap layers and InP, form the table top exposing InP substrate subregion;
Epitaxial wafer after S3, formation table top, after cleaning, carries out secondary epitaxy growth, forms passivation layer;
S4, over the passivation layer formation expose the through hole of InP cap layers subregion, form the first electrode of ring-type at the madial wall of through hole;
S5, prepare the second electrode at the back side of N-type InP substrate.
In step S2, described passivation layer also covers the sidewall of described InGaAs photosensitive layer, described InP cap layers and described InP resilient coating.
The step directly forming the anti-reflection layer at least covering described first electrode middle section in described InP cap layers is also comprised after step S4.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of low-dark current indium gallium arsenic detector of the present invention, its passivation layer adopts the mode of secondary epitaxy to be prepared, and quality of forming film, far away higher than traditional handicraft, greatly can reduce the generation of dark current, significantly promotes the performance of indium gallium arsenic detector.
2, the preparation method of a kind of low-dark current indium gallium arsenic detector of the present invention, technique is simple, and preparation cost is low, easily realizes large-scale industrial production.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1-4 is a kind of low-dark current indium gallium arsenic detector of the present invention structural representations in preparation process;
In figure, Reference numeral is expressed as: 1-N type InP substrate, 2-InP resilient coating, 3-InGaAs resilient coating, 4-InP cap layers, 5-passivation layer, 6-first electrode, 7-anti-reflection layer, 8-second electrode.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
embodiment
The present embodiment provides a kind of low-dark current indium gallium arsenic detector, as shown in Figure 4, comprise second electrode (8) of stacked setting, N-type InP substrate (1) and eigen I nP resilient coating (2), described InP resilient coating is directly formed with InGaAs photosensitive layer (3), described InGaAs photosensitive layer (3) is above stacked is provided with InP cap layers (4) and the passivation layer (5) by epitaxial growth, and described InP cap layers area is less than or equal to the area of described InGaAs photosensitive layer; Offer the through hole exposing described InP cap layers subregion in described passivation layer, form annular first electrode (6) along described through hole madial wall.
In the present embodiment, described InP substrate (1) is preferably N-type InP substrate, and thickness is 350 μm, and doped chemical is element sulphur, and doping content is 2-8 × 10
18cm
-3.
Described InP resilient coating (2) is intrinsic semiconductor layer, undopes in growth course, and thickness is 1 μm.
Described InGaAs photosensitive layer (3) is intrinsic semiconductor layer, and the present embodiment is preferably In
0.53ga
0.47as, thickness is 3 μm.
Described InP cap layers (4) is p type semiconductor layer, and the present embodiment is preferably the InP layer doped with Zn-ef ficiency, and doping content is 5 × 10
18cm
-3, thickness is 1 μm.
Described passivation layer (5) is intrinsic material, and the present embodiment is preferably In
0.53al
0.47as, thickness is 0.3 μm.
Offer the through hole exposing described InP cap layers (4) subregion in described passivation layer (5), form annular first electrode (6) along described through hole madial wall.
The back side of described InP substrate 1, directly forms the second electrode (8).
As convertible embodiment of the present invention, described InP cap layers (4) is also directly provided with the anti-reflection layer (7) at least covering described second electrode (6) middle section, for reducing the reflection ray of described InP cap layers (4), improve light amount, thus improve described low-dark current indium gallium arsenic detector sensitivity.
The preparation method of described low-dark current indium gallium arsenic detector, comprises the steps:
S1, as shown in Figure 1, by growth technology InP resilient coating (2), described InGaAs photosensitive layer (3) and described InP cap layers (4) described in epitaxial growth successively on described N-type InP substrate (1).
S2, as shown in Figure 2, by etching technics, patterning is carried out to described InGaAs photosensitive layer (3), described InP cap layers (4) and described InP resilient coating (2), form the table top exposing described InP substrate (1) subregion.
S3, as shown in Figure 3, by secondary epitaxy growing technology, InAlAs passivation layer (5) described in described InP substrate (1) surface, described InP resilient coating (2) sidewall, described InGaAs photosensitive layer (3) sidewall, described InP cap layers (4) sidewall and surperficial epitaxial growth one deck.
S4, as described in Figure 4, by wet-etching technology, forms the through hole exposing described InP cap layers (4) subregion described passivation layer (5) is upper; Formed described first electrode (6) of ring-type at the madial wall of through hole by evaporation process; Utilize same evaporation process, at back side evaporation second electrode (7) of described InP substrate (1).
As convertible embodiment of the present invention; the step directly at least covering the anti-reflection layer of described first electrode (6) middle section in the upper formation of described InP cap layers (4) is also comprised after step S4; all can realize object of the present invention, belong to protection scope of the present invention.
As convertible embodiment of the present invention; the preparation technology of each element in the indium of low-dark current described in above-mentioned steps gallium arsenic detector is not limited thereto; other treatment process that can reach same effect of the prior art; and select corresponding treatment process all can reach object of the present invention according to different materials, belong to protection scope of the present invention.
Claims (8)
1. a low-dark current indium gallium arsenic detector, it is characterized in that, comprise second electrode (8) of stacked setting, N-type InP substrate (1) and eigen I nP resilient coating (2), described InP resilient coating (2) is directly formed with InGaAs photosensitive layer (3), described InGaAs photosensitive layer (3) is above stacked is provided with InP cap layers (4) and the passivation layer (5) by epitaxial growth, and described InP cap layers area is less than or equal to the area of described InGaAs photosensitive layer; Offer the through hole exposing described InP cap layers subregion in described passivation layer (5), form annular first electrode (6) along described through hole madial wall.
2. low-dark current indium gallium arsenic detector according to claim 1, is characterized in that, the energy gap of described passivation layer (5) need be greater than the energy gap of described InGaAs photosensitive layer (3).
3. low-dark current indium gallium arsenic detector according to claim 1, it is characterized in that, described passivation layer (5) is InAlAs.
4. low-dark current indium gallium arsenic detector according to claim 1, is characterized in that, described passivation layer (5) covers the sidewall of described InGaAs photosensitive layer (3), described InP cap layers (4) and described InP resilient coating (2).
5. low-dark current indium gallium arsenic detector according to claim 1, it is characterized in that, described InP cap layers (4) is also directly provided with the anti-reflection layer (7) at least covering described first electrode (6) middle section, for reducing the reflection ray of described InP cap layers (4).
6. the preparation method of low-dark current indium gallium arsenic detector of the present invention, comprises the steps:
S1, in N-type InP substrate (1) nP of epitaxial growth eigen I successively resilient coating (2), eigen I nGaAs photosensitive layer (3) and P type InP cap layers (4);
S2, to InGaAs photosensitive layer (3), InP cap layers (4) and InP resilient coating (2) patterning, formed and expose the table top of InP substrate (1) subregion;
Epitaxial wafer after S3, formation table top, after clean, carries out secondary epitaxy growth, forms passivation layer (5);
S4, form the through hole exposing InP cap layers (4) subregion passivation layer (5) is upper, form first electrode (6) of ring-type at the madial wall of through hole;
S5, prepare the second electrode (8) at the back side of N-type InP substrate (1).
7. the preparation method of low-dark current indium gallium arsenic detector according to claim 6, it is characterized in that, in step S2, described passivation layer (5) also covers the sidewall of described InGaAs photosensitive layer (3), described InP cap layers (4) and described InP resilient coating (2).
8. the preparation method of low-dark current indium gallium arsenic detector according to claim 6, it is characterized in that, after step S4, also comprise the step directly at least covering the anti-reflection layer (7) of described first electrode (6) middle section in the upper formation of described InP cap layers (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510928646.0A CN105405913A (en) | 2015-12-15 | 2015-12-15 | Low dark current InGaAs detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510928646.0A CN105405913A (en) | 2015-12-15 | 2015-12-15 | Low dark current InGaAs detector and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105405913A true CN105405913A (en) | 2016-03-16 |
Family
ID=55471292
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510928646.0A Pending CN105405913A (en) | 2015-12-15 | 2015-12-15 | Low dark current InGaAs detector and preparation method thereof |
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| Country | Link |
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| CN (1) | CN105405913A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910402A (en) * | 2017-06-28 | 2018-04-13 | 超晶科技（北京）有限公司 | A kind of indium-gallium-arsenide infrared detector material preparation method |
| CN109860326A (en) * | 2018-12-14 | 2019-06-07 | 苏州矩阵光电有限公司 | A kind of photodetector and preparation method thereof |
| CN110176507A (en) * | 2019-05-31 | 2019-08-27 | 厦门市三安集成电路有限公司 | Passivating structure and photodiode of a kind of table top PIN and preparation method thereof |
-
2015
- 2015-12-15 CN CN201510928646.0A patent/CN105405913A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910402A (en) * | 2017-06-28 | 2018-04-13 | 超晶科技（北京）有限公司 | A kind of indium-gallium-arsenide infrared detector material preparation method |
| CN109860326A (en) * | 2018-12-14 | 2019-06-07 | 苏州矩阵光电有限公司 | A kind of photodetector and preparation method thereof |
| CN110176507A (en) * | 2019-05-31 | 2019-08-27 | 厦门市三安集成电路有限公司 | Passivating structure and photodiode of a kind of table top PIN and preparation method thereof |
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Application publication date: 20160316 |
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