CN104362215A - High-efficiency flexible thin film solar cell manufacturing method - Google Patents
High-efficiency flexible thin film solar cell manufacturing method Download PDFInfo
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- CN104362215A CN104362215A CN201410477359.8A CN201410477359A CN104362215A CN 104362215 A CN104362215 A CN 104362215A CN 201410477359 A CN201410477359 A CN 201410477359A CN 104362215 A CN104362215 A CN 104362215A
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- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000005260 corrosion Methods 0.000 claims abstract description 26
- 230000007797 corrosion Effects 0.000 claims abstract description 26
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 109
- 239000011241 protective layer Substances 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 11
- 238000011946 reduction process Methods 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000008033 biological extinction Effects 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-efficiency flexible thin film solar cell manufacturing method. The method includes providing an epitaxial substrate; growing an epitaxial structure on the epitaxial substrate; growing an ohmic contact layer on the epitaxial structure, and growing an epitaxial protecting layer on the ohmic contact layer; bonding the epitaxial protecting layer on a rigid supporting template; adopting an epitaxial substrate thinning process to thin the epitaxial substrate; evaporating a back electrode on the thinned epitaxial substrate, and bonding the thinned epitaxial substrate on a flexible thin film substrate; removing the rigid supporting template and the epitaxial protecting layer; evaporating front grid electrodes on the ohmic contact layer, removing the ohmic contact layer of a light absorbing portion through a selective corrosion process, evaporating an anti-reflection film in a corrosion area, and slivering to obtain a solar cell. The solar cell manufactured by the method is high in conversion efficiency, reliability and flexibility, and weight is reduced.
Description
Technical field
The present invention relates to technical field of solar batteries, refer in particular to a kind of high-efficiency flexible thin-film solar cells manufacture method.
Background technology
The III-V solar cell being representative with GaInP/GaInAs/Ge three-joint solar cell has the advantages such as photoelectric conversion efficiency is high, Radiation hardness strong, good temp characteristic, be used widely in Spacecraft Electrical Power System and high power concentrating photovoltaic power station, ground, and replacement crystal silicon solar batteries becomes spacecraft main power source completely.
Because GaInP/GaInAs/Ge three-joint solar cell is based on thicker rigidity Ge substrate, usual rigidity Ge substrate thickness >=140 μm, battery chip weight is comparatively large and shortage is flexible, adds the weight and volume of spacecraft solar panel.And traditional Copper Indium Gallium Selenide, cadmium telluride or amorphous silicon flexible thin-film solar cell fail to enter space application market due to reasons such as conversion efficiency is low, poor stabilities.
Therefore, development flexible thin film type III-V solar cell can meeting spatial aircraft to the requirement of solar cell high efficiency, high reliability, effectively can reduce again the weight of spacecraft solar panel.Adopt flexible thin-film battery can be curling, reduce the volume of solar panel simultaneously, the lift-launch ability of room for promotion aircraft and reduce launch cost; In addition, this high-efficiency flexible thin-film solar cells also can meet the application requirement of near space vehicle, such as solar pilotless plane, unmanned airship etc.; This case produces thus.
Summary of the invention
The object of the present invention is to provide a kind of high-efficiency flexible thin-film solar cells manufacture method, high, the good reliability of conversion efficiency of solar cell that the method manufactures, and better flexible and weight reduction.
For reaching above-mentioned purpose, solution of the present invention is:
A kind of high-efficiency flexible thin-film solar cells manufacture method, comprises the following steps:
Step one, provides epitaxial substrate;
Step 2, at extension Grown epitaxial structure;
Step 3, epitaxial structure grows ohmic contact layer, growing epitaxial protective layer on ohmic contact layer;
Step 4, is bonded to extension protective layer in rigid support template;
Step 5, adopts epitaxial substrate reduction process that epitaxial substrate is thinning;
Step 6, evaporation back electrode in the epitaxial substrate after thinning, and be bonded on fexible film substrate;
Step 7, removes rigid support template and extension protective layer;
Step 8, on ohmic contact layer evaporation front gate line electrode, and removed the ohmic contact layer of extinction part by selective corrosion technique, at corrosion area evaporation antireflective coating, sliver process and get final product.
Further, the gross thickness of thinning epitaxial substrate and epitaxial structure and ohmic contact layer is 20-60 μm.
Further, epitaxial substrate reduction process is: first adopt high concentration etchant solution, increases corrosion temperature, etches the back side of epitaxial substrate under high corrosion rate; After epitaxial substrate is thinning, adopts dilution etchant solution, reduce etchant solution temperature, under low corrosion speed, continue the back side of etching epitaxial substrate to target thickness.
Further, epitaxial substrate reduction process is: remove epitaxial substrate redundance until target thickness by the method for mechanical lapping.
Further, epitaxial substrate reduction process is: first adopt the thinning epitaxial substrate of chemical corrosion, then continues to adopt the thinning epitaxial substrate of mechanical lapping to target thickness; Or first adopt the thinning epitaxial substrate of mechanical lapping, then continue to adopt the thinning epitaxial substrate of method of chemical corrosion thick to target.
A kind of high-efficiency flexible thin-film solar cells, thinning epitaxial substrate side arranges back electrode, and back electrode is bonded on fexible film substrate; Thinning epitaxial substrate opposite side arranges epitaxial structure, epitaxial structure arranges ohmic contact layer, ohmic contact layer arranges front gate line electrode, and selective corrosion ohmic contact layer, corrosion area arranges antireflective coating.
Further, the gross thickness of thinning epitaxial substrate and epitaxial structure and ohmic contact layer is 20-60 μm.
Further, epitaxial structure is single-junction structure.
Further, unijunction epitaxial structure is in thinning epitaxial substrate, arrange battery BSF layer, and battery BSF layer sets gradually battery base, battery emitter region and battery Window layer, and battery Window layer is adjacent with ohmic contact layer.
Further, epitaxial structure is double junction structure.
Further, binode epitaxial structure is in thinning epitaxial substrate, arrange end battery BSF layer, battery BSF layer in the end sets gradually battery base, the end, battery emitter region, the end, end battery Window layer, tunnel junctions, top battery BSF layer, battery base, top, battery emitter region, top and top battery Window layer, and top battery Window layer is adjacent with ohmic contact layer.
Further, epitaxial structure is three junction structures.
Further, three knot epitaxial structures are in thinning epitaxial substrate, arrange end battery BSF layer, battery BSF layer in the end sets gradually battery base, the end, battery emitter region, the end, end battery Window layer, battery tunnel junctions of the middle end, middle battery BSF layer, middle battery base, middle battery emitter region, middle battery Window layer, middle top battery tunnel junctions, top battery BSF layer, battery base, top, battery emitter region, top, top battery Window layer, and top battery Window layer is adjacent with ohmic contact layer.
Further, three knot epitaxial structures for arrange battery emitter region, the end in Ge epitaxial substrate, battery emitter region, the end sets gradually end battery Window layer, battery tunnel junctions of the middle end, middle battery BSF layer, middle battery base, middle battery emitter region, middle battery Window layer, middle top battery tunnel junctions, top battery BSF layer, battery base, top, battery emitter region, top, top battery Window layer, and top battery Window layer is adjacent with ohmic contact layer.
Further, the material of epitaxial substrate is InP, GaAs or Ge.
Adopt after such scheme, the present invention by rigidity epitaxial substrate by epitaxy technique growing epitaxial structure, then by the thinning epitaxial substrate of reduction process, and be bonded on fexible film substrate and formed.
Epitaxial structure, according to energy gap order from small to large, is superimposed upon in epitaxial substrate from the bottom to top successively.Epitaxial structure in the present invention is epitaxially grown monocrystalline III-V material, and quality of materials is good, and conversion efficiency is high.In addition, different from III-V race's thin-film solar cells that tradition adopts inverted structure to grow, epitaxial structures succession of the present invention is formal dress epitaxial growth, the adverse effects such as the P/N type doping diffusion avoiding upside-down mounting epitaxial growth to bring, remain the feature of formal dress rigid substrate III-V race's multijunction solar cell, have that conversion efficiency is high, quality is than advantages such as power (W/kg) height, good reliabilitys.
The present invention also provides above-mentioned a kind of high-efficiency soft hull cell manufacture method, by mechanical lapping, chemical corrosion or the mechanical lapping thinning epitaxial substrate of method in conjunction with chemical corrosion, be different from the manufacture method of traditional flexible thin-film solar cell, do not need to peel off sacrifice layer, manufacture craft is simple and easy to realize, the large-area thin-film solar cells of easy making, improves the rate of finished products of thin-film solar cells.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention one epitaxial growth structure schematic diagram;
Fig. 2 be the embodiment of the present invention one thinning after epitaxial substrate structural representation;
Fig. 3 is the embodiment of the present invention one thin-film solar cells chip structure schematic diagram;
Fig. 4 is the embodiment of the present invention two epitaxial growth structure schematic diagram;
Fig. 5 be the embodiment of the present invention two thin after epitaxial substrate subtract structural representation;
Fig. 6 is the embodiment of the present invention two thin-film solar cells chip structure schematic diagram.
Label declaration
Epitaxial substrate 1 epitaxial loayer 2
Battery BSF layer 21 battery base 22
Battery emitter region 23 battery Window layer 24
End battery emitter region, battery base 25, the end 26
End battery tunnel junctions 28 in end battery Window layer 27
Battery base 210 in middle battery BSF layer 29
Battery Window layer 212 in middle battery emitter region 211
Middle top battery tunnel junctions 213 pushes up battery BSF layer 214
Battery base 215, top pushes up battery emitter region 216
Top battery Window layer 217 ohmic contact layer 3
Extension protective layer 4 rigid support template 5
Back electrode 6 fexible film substrate 7
Front gate line electrode 8 antireflective coating 9.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Embodiment one
As shown in Figure 1; the unijunction solar cell epitaxial structure that the present invention discloses; grown epitaxial layer 2, ohmic contact layer 3, extension protective layer 4 successively in epitaxial substrate 1; in the present embodiment; epitaxial loayer 2 carries on the back electric field for growing battery BSF(in epitaxial substrate 1) layer 21; battery BSF layer 21 grows battery base 22, battery emitter region 23 and battery Window layer 24 successively, and battery Window layer 24 is adjacent with ohmic contact layer 3.
In epitaxial process, epitaxial substrate 1 uses GaAs substrate, and the thickness of epitaxial substrate 1 is 350 μm.
Battery BSF layer 21 material is AlGaAs, and thickness is 50nm.Battery base 22 and battery emitter region 23 material adopt GaAs III-V compounds of group, and battery base 22 thickness is 3 μm, and the thickness of battery emitter region 23 is 500nm.Battery Window layer 24 material is GaInP III-V compounds of group, and thickness is 50nm.
Ohmic contact layer 3 material is GaAs III-V compounds of group, and thickness is 500nm.Extension protective layer 4 material is AlGaInP III-V compounds of group, and thickness is 600nm.
Described extension protective layer 4 connection pastes in rigid support template 5, and rigid support template 5 is silicon substrate.The unnecessary part of epitaxial substrate 1 is removed by the method for wet etching.Be specially, first use the etchant solution H of high corrosion rate
2sO
4: H
2o
2: the volume ratio of HF is 3:2:2, H
2sO
4, H
2o
2, HF is industry universal, and temperature is increased to 70 DEG C of corrosive liquid temperature, the back side of etching epitaxial substrate 1; After 5 minutes, change to the etchant solution H of low corrosion speed
2sO
4: H
2o
2: the volume ratio of HF is 1:2:2, and temperature is adjusted to 25 DEG C of corrosive liquid temperature.After 10 minutes; Epitaxial loayer 2, thinning after epitaxial substrate 1 and the gross thickness of ohmic contact layer 3 be 40 μm, as shown in Figure 2.
Evaporation back electrode 6 in thinning epitaxial substrate 1, and be bonded in and have on the fexible film substrate 5 of conductivity.Removal rigid support template 5 and thickness are the AlGaInP extension protective layer 4 of 600nm.Evaporation front gate line electrode 8 on ohmic contact layer 3, and the ohmic contact layer 3 being removed shading light part by selective corrosion technique, evaporation antireflective coating 9 is in the front of solar cell.Final sliver process, namely obtains described flexible thin-film solar cell by above manufacture craft, as shown in Figure 3.
Embodiment two
As shown in Figure 4, the solar cell epitaxial structure that the present invention discloses, its epitaxial substrate 1 material is Ge, grown epitaxial layer 2 successively in epitaxial substrate 1, ohmic contact layer 3, extension protective layer 4, in the present embodiment, epitaxial loayer 2 for grow battery base, the end 25 in epitaxial substrate 1, battery base, the end 25 grows battery emitter region, the end 26 successively, end battery Window layer 27, battery tunnel junctions of the middle end 28, middle battery BSF layer 29, middle battery base 210, middle battery emitter region 211, middle battery Window layer 212, middle top battery tunnel junctions 213, top battery BSF layer 214, battery base 215, top, battery emitter region 216, top, top battery Window layer 217, top battery Window layer 217 is adjacent with ohmic contact layer 3.
The material of battery base, the end 25 and battery emitter region, the end 26 is growth substrates Ge, and battery emitter region, the end 26 is formed by diffusing V clan source, and thickness is 500nm; End battery Window layer 27 material is GaInP III-V compounds of group, and the thickness of end battery Window layer 27 is 20nm; Tunnel junctions 28 material of the middle end is that two-layer opposite polarity GaAs/GaAs material is formed by stacking, and the gross thickness of tunnel junctions of the middle end 28 is 50nm; Middle battery BSF layer 29 material is AlGaAs, and the thickness of middle battery BSF layer 29 is 50nm; Middle battery base 210 and middle battery emitter region 211 material adopt GaInAs III-V compounds of group mated with Ge substrate lattice, and In component is 1%, and middle battery base 210 thickness is 3 μm, and the thickness of middle battery emitter region 211 is 100nm; Middle battery Window layer 212 material is AlInP III-V compounds of group, and middle battery Window layer 212 thickness is 100nm; Middle top battery tunnel junctions 213 material is GaInP/AlGaAs, and middle top battery tunnel junctions 213 thickness is 50nm; Top battery BSF layer 214 material is AlGaInP, and top battery BSF layer 214 thickness is 100nm; Battery base, top 215 and battery emitter region 216, top material adopt GaInP III-V compounds of group, and battery base 215, top thickness is 600nm, and battery emitter region 216, top thickness is 100nm; Top battery Window layer 217 material is AlInP III-V compounds of group, and top battery Window layer 217 thickness is 50nm.
Ohmic contact layer 3 material is GaAs III-V compounds of group, and thickness is 500nm.Extension protective layer 4 material is AlGaInP III-V compounds of group, and thickness is 600nm.
Extension protective layer 4 connection pastes rigid support template 5, and rigid support template 5 is on silicon substrate.The unnecessary part of epitaxial substrate 1 is removed by the method for wet etching.Be specially, first use the etchant solution NaOH:H of high corrosion rate
2o
2: H
2the volume ratio of O is 3:6:1, NaOH, H
2o
2, H
2o is industry universal, and temperature is increased to 60 DEG C of corrosive liquid temperature, the back side of etching epitaxial substrate 1.After 20 minutes, change to the etchant solution NaOH:H of low corrosion speed
2o
2: H
2the volume ratio of O is 1:2:1, and temperature is adjusted to 25 DEG C of corrosive liquid temperature, after 15 minutes, epitaxial loayer 2, thinning after epitaxial substrate 1 and the gross thickness of ohmic contact layer 3 be 40 μm, as shown in Figure 5.
Evaporation back electrode 6 in thinning epitaxial substrate 1, and be bonded in and have on the fexible film substrate 7 of conductivity.Removal rigid support template 5 and thickness are the AlGaInP extension protective layer 4 of 600nm.Evaporation front gate line electrode 8 on ohmic contact layer 3, and the ohmic contact layer 3 of shading light part is removed by selective corrosion technique, evaporation antireflective coating 9 is in the front of solar cell, and namely final sliver process obtains described flexible thin-film solar cell, as shown in Figure 6.
The foregoing is only preferred embodiment of the present invention, not to the restriction of this case design, all equivalent variations done according to the design key of this case, all fall into the protection range of this case.
Claims (10)
1. a high-efficiency flexible thin-film solar cells manufacture method, is characterized in that, comprises the following steps:
Step one, provides epitaxial substrate;
Step 2, at extension Grown epitaxial structure;
Step 3, epitaxial structure grows ohmic contact layer, growing epitaxial protective layer on ohmic contact layer;
Step 4, is bonded to extension protective layer in rigid support template;
Step 5, adopts epitaxial substrate reduction process that epitaxial substrate is thinning;
Step 6, evaporation back electrode in the epitaxial substrate after thinning, and be bonded on fexible film substrate;
Step 7, removes rigid support template and extension protective layer;
Step 8, on ohmic contact layer evaporation front gate line electrode, and removed the ohmic contact layer of extinction part by selective corrosion technique, at corrosion area evaporation antireflective coating, sliver process and get final product.
2. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, is characterized in that, the gross thickness of thinning epitaxial substrate and epitaxial structure and ohmic contact layer is 20-60 μm.
3. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterized in that, epitaxial substrate reduction process is: first adopt high concentration etchant solution, increases corrosion temperature, etches the back side of epitaxial substrate under high corrosion rate; After epitaxial substrate is thinning, adopts dilution etchant solution, reduce etchant solution temperature, under low corrosion speed, continue the back side of etching epitaxial substrate to target thickness.
4. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterized in that, epitaxial substrate reduction process is: remove epitaxial substrate redundance until target thickness by the method for mechanical lapping.
5. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterized in that, epitaxial substrate reduction process is: first adopt the thinning epitaxial substrate of chemical corrosion, then continues to adopt the thinning epitaxial substrate of mechanical lapping to target thickness; Or first adopt the thinning epitaxial substrate of mechanical lapping, then continue to adopt the thinning epitaxial substrate of method of chemical corrosion thick to target.
6. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterized in that, epitaxial structure is single-junction structure.
7. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 6, it is characterized in that, unijunction epitaxial structure is in thinning epitaxial substrate, arrange battery BSF layer, battery BSF layer sets gradually battery base, battery emitter region and battery Window layer, and battery Window layer is adjacent with ohmic contact layer.
8. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterized in that, epitaxial structure is double junction structure.
9. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 8, it is characterized in that, binode epitaxial structure is in thinning epitaxial substrate, arrange end battery BSF layer, battery BSF layer in the end sets gradually battery base, the end, battery emitter region, the end, end battery Window layer, tunnel junctions, top battery BSF layer, battery base, top, battery emitter region, top and top battery Window layer, and top battery Window layer is adjacent with ohmic contact layer.
10. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterized in that, epitaxial structure is three junction structures; Three knot epitaxial structures are in thinning epitaxial substrate, arrange end battery BSF layer, battery BSF layer in the end sets gradually battery base, the end, battery emitter region, the end, end battery Window layer, battery tunnel junctions of the middle end, middle battery BSF layer, middle battery base, middle battery emitter region, middle battery Window layer, middle top battery tunnel junctions, top battery BSF layer, battery base, top, battery emitter region, top, top battery Window layer, and top battery Window layer is adjacent with ohmic contact layer.
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| CN104867989A (en) * | 2015-06-01 | 2015-08-26 | 河北英沃泰电子科技有限公司 | High-efficiency flexible GaAs solar cell and manufacturing method thereof |
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| US20080245409A1 (en) * | 2006-12-27 | 2008-10-09 | Emcore Corporation | Inverted Metamorphic Solar Cell Mounted on Flexible Film |
| CN101764174A (en) * | 2008-12-25 | 2010-06-30 | 上海太阳能工程技术研究中心有限公司 | Method for manufacturing light-focusing multi-junction gallium arsenide solar cell |
| CN103208561A (en) * | 2013-03-22 | 2013-07-17 | 上海中科高等研究院 | Flexible thin-film solar cell and preparation method for solar cell |
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| US20080245409A1 (en) * | 2006-12-27 | 2008-10-09 | Emcore Corporation | Inverted Metamorphic Solar Cell Mounted on Flexible Film |
| CN101764174A (en) * | 2008-12-25 | 2010-06-30 | 上海太阳能工程技术研究中心有限公司 | Method for manufacturing light-focusing multi-junction gallium arsenide solar cell |
| CN103208561A (en) * | 2013-03-22 | 2013-07-17 | 上海中科高等研究院 | Flexible thin-film solar cell and preparation method for solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104867989A (en) * | 2015-06-01 | 2015-08-26 | 河北英沃泰电子科技有限公司 | High-efficiency flexible GaAs solar cell and manufacturing method thereof |
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