CN103199142B - GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof - Google Patents

GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof Download PDF

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CN103199142B
CN103199142B CN201310114572.8A CN201310114572A CN103199142B CN 103199142 B CN103199142 B CN 103199142B CN 201310114572 A CN201310114572 A CN 201310114572A CN 103199142 B CN103199142 B CN 103199142B
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gaas
battery
gainp
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ingaas
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CN103199142A (en
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赵勇明
董建荣
李奎龙
孙玉润
曾徐路
于淑珍
赵春雨
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The invention provides a kind of GaInP/GaAs/InGaAs/Ge four-junction solar cell, its band-gap energy is respectively 1.89eV, 1.42eV, 1.0eV and 0.67eV；Including Ge battery, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs, (In) GaAs bonded layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot and the sub-battery of GaInP.The present invention also provides for the preparation method of a kind of GaInP/GaAs/InGaAs/Ge four-junction solar cell, including step: 1) a Ge battery is provided；2) stratum nucleare, the first cushion, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs and (In) GaAs bonded layer are grown into successively at Ge battery surface；3) a GaAs substrate is provided；4) the second cushion, sacrifice layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot, the sub-battery of GaInP and GaAs contact layer are grown the most successively；5) GaAs substrate is peeled off；6) (In) GaAs bonded layer is bonded with GaAs or GaInP bonded layer.

Description

GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof
Technical field
The present invention relates to area of solar cell, particularly relate to GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof.
Background technology
As one preferable green energy resource material, solaode becomes the study hotspot of various countries, in order to promote the most practical of solaode, improves a kind of effective means that its photoelectric transformation efficiency is its reduction cost of electricity-generating.Laminated cell uses the sub-battery tandem energy of different energy gap to improve the utilization rate of sunlight greatly, studying more and that technology is more ripe system at present is GaInP/GaAs/Ge tri-junction battery, and the high conversion efficiency that this material system reaches under a sun at present is 32%-33%.But battery at the bottom of Ge covers wider spectrum in this three junction battery, its short circuit current is relatively big, in order to the currents match realized with other sub-batteries will necessarily reduce sunlight utilization rate.In order to improve conversion efficiency further, need end battery is split, insert, in the middle of at GaAs and Ge battery, the InGaAsN material that a band gap is 1.00eV, make four junction batteries, it is achieved photoelectric current mates, improve battery efficiency.
But the InGaAsN fault in material of preparation is many at present, carrier mobility is low, have impact on the raising of battery performance.Therefore research worker actively seeks other approach to obtain efficient solaode, it is proved to be feasible at the InGAs of GaAs substrate mismatch growth 1.0eV, in order to save transition zone number, the general method using upside-down mounting growth, but device performance decreases relative to formal dress growth.As used merely the bonding of InGaAsP/InGaAs (1.05/0.74eV) the binode battery of GaInP/GaAs based on GaAs substrate (1.9/1.42eV) and InP substrate from the angle of Lattice Matching, bonding chip battery needs two substrates of GaAs and InP, and it is less with the absorptance of InGaAsP with InGaAs of InP Lattice Matching, need to grow nearly 6 microns of thick epitaxial layers, this considerably increases the cost of manufacture of battery；How to realize the combination of multijunction solar cell rational band gap, reduce current mismatch and simultaneously and don't improve battery cost of manufacture and difficulty becomes the problem that solution needed badly by current III-V race's solaode.
Summary of the invention
The technical problem to be solved is to provide GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof.
In order to solve the problems referred to above, the invention provides a kind of GaInP/GaAs/InGaAs/Ge four-junction solar cell, including Ge battery, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs, (In) GaAs bonded layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot and the sub-battery of GaInP.
Further, described Ge battery comprises the first base that material is Ge, and the first launch site that material is Ge arranged on the first base.
Further, the band-gap energy of described four-junction solar cell is respectively 1.89eV, 1.42eV, 1.0eV and 0.67eV.
Further, described Ge battery and the sub-battery of InGaAs are successively set on described Ge substrate according to the direction away from Ge substrate, form band-gap energy and are respectively first double-junction solar battery of 1.0eV, 0.67eV.
Further, the sub-battery of described GaAs and the sub-battery of GaInP grow according to the direction away from GaAs substrate, peel off described GaAs substrate, form band-gap energy and are respectively second double-junction solar battery of 1.89eV, 1.42eV.
Further, described second double-junction solar battery is bonded by described (In) GaAs bonded layer and GaAs or GaInP bonded layer with described first double-junction solar battery.
In order to solve the problems referred to above, the present invention also provides for the preparation method of a kind of GaInP/GaAs/InGaAs/Ge four-junction solar cell, including step: 1) a Ge battery is provided；2) stratum nucleare, the first cushion, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs and (In) GaAs bonded layer are grown into successively at Ge battery surface；3) a GaAs substrate is provided；4) the second cushion, sacrifice layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot, the sub-battery of GaInP and GaAs contact layer are grown the most successively；5) GaAs substrate is peeled off；6) described (In) GaAs bonded layer is bonded with described GaAs or GaInP bonded layer.
Further, also including after step 6): 7) Ge cell backside after cleaning makes P electrode, and GaAs contact layer surface after cleaning makes palisade N electrode, forms target solaode.
The present invention provides GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof, and advantage is:
1. this four knots tandem solar cell band gap is combined as 1.90eV, 1.42eV, ~ 1.00eV, 0.67eV, the currents match of each sub-battery, it is achieved that high voltage, and low current exports, reduces the heat-energy losses in photoelectric conversion process, improve battery efficiency；
2. this four knots tandem solar cell uses the growth of formal dress growing method, reduces the difficulty of device growth and battery process；
3. peel off after GaAs substrate polished after, repeatable utilization, reduce the cost of battery；
4. use Ge as supporting substrate, take full advantage of the good mechanical strength of Ge material and heat conductivity.
Accompanying drawing explanation
Fig. 1 show the structure chart of the GaInP/GaAs/InGaAs/Ge four-junction solar cell that the present invention the first detailed description of the invention provides；
Fig. 2 show the preparation method flow chart of steps of the GaInP/GaAs/InGaAs/Ge four-junction solar cell that the present invention the second detailed description of the invention provides；
Fig. 3 show the structure chart that the GaInP/GaAs/InGaAs/Ge four-junction solar cell of the present invention the second detailed description of the invention offer is formed after step S202；
Fig. 4 show the structure chart that the GaInP/GaAs/InGaAs/Ge four-junction solar cell of the present invention the second detailed description of the invention offer is formed after step S204.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the GaInP/GaAs/InGaAs/Ge four-junction solar cell that the present invention provides and preparation method thereof is elaborated.
First detailed description of the invention
Fig. 1 show the structure chart of the GaInP/GaAs/InGaAs/Ge four-junction solar cell that this detailed description of the invention provides.
This detailed description of the invention provides a kind of GaInP/GaAs/InGaAs/Ge four-junction solar cell using formal dress mode to grow, and band gap is combined as 1.90eV/1.42eV/ ~ 1.00eV/0.67eV.Ge battery 30 that described GaInP/GaAs/InGaAs/Ge tetra-junction battery solaode includes setting gradually, the nucleating layer 03 of InGaAs or GaInP, InGaAs cushion the 04, first tunnel knot 31, gradual transition layer 07, the sub-battery of InGaAs 32, (In) GaAs bonded layer 12, GaAs or GaInP bonded layer 17, the sub-battery of GaAs the 33, second tunnel knot 34, the sub-battery of GaInP 35 and GaAs contact layer 28.
The described sub-battery 32 of Ge battery 30 and InGaAs is successively set on described Ge substrate according to the direction away from Ge substrate, forms band-gap energy and is respectively first double-junction solar battery of 1.0eV, 0.67eV.The sub-battery 35 of the sub-battery of described GaAs 33 and GaInP grows according to the direction away from GaAs substrate 14, forms band-gap energy and is respectively second double-junction solar battery of 1.89eV, 1.42eV.Peeling off described GaAs substrate 14, described second double-junction solar battery is bonded by described (In) GaAs bonded layer 12 and GaAs or GaInP bonded layer 17 with described first double-junction solar battery, forms four-junction solar cell.
Described Ge battery 30 comprises the first base 01 that material is Ge, and the first launch site 02 that material is Ge arranged on the first base 01.Wherein, the first base 01 is Ge substrate.
Then at the nucleating layer 03 of described Ge battery 30 superficial growth InGaAs or GaInP, and at nucleating layer 03 superficial growth InGaAs cushion 04.As optional embodiment, the band gap of described InGaAs cushion 04 is more than 0.67eV.
Described first tunnel knot 31 comprises successively according to being gradually distance from the GaInP or (In) GaAs doped layer 04 and (Al) GaAs doped layer 05 that Ge battery 30 direction arranges.Wherein, (In) GaAs represents InGaAs or GaAs, and (Al) GaAs represents AlGaAs or GaAs.As optional embodiment, the doping type of described first doped layer 05 be N-type, the doping type of the second doped layer 06 be p-type.
The material of described gradual transition layer 07 is AlyGa1-x-yInxAs or Ga1-xInxP, is used for realizing Ge battery 30 lattice paprmeter to InGaAs battery 32 lattice constant transition.Wherein said AlyGa1-x-yInxIn As, x is in the range of 0 ~ 0.27, and y is in the range of 0 ~ 0.4；And Ga1-xInxIn P, x is in the range of 0.48 ~ 0.78.The band gap of described gradual transition layer 07 is more than 1.0eV.
The sub-battery of described InGaAs 32 comprises successively according to the second launch site 10 and the second Window layer 11 being gradually distance from the second back surface field layer 08 that material is AlGaInAs of Ge battery 30 direction setting, material is second base 09 of InGaAs, material is InGaAs, and the material of described second Window layer 11 is GaInP, InGaAlAs or AlInP.
The lattice paprmeter of the lattice paprmeter battery with InGaAs 32 of described (In) GaAs bonded layer 12 is identical.
Described bonded layer 17 material is GaAs or GaInP, thickness 200-800nm.
The sub-battery of described GaAs 33 comprise successively according to being gradually distance from the 3rd back surface field layer 18 that material is GaInP or AlGaAs that Ge battery 30 direction arranges, material be the 3rd base 19 of GaAs, material be the 3rd launch site 20 of GaAs and the 3rd Window layer 21 that material is Al (Ga) InP.
Described second tunnel knot 34 comprises successively according to being gradually distance from the 5th doped layer 22 that material is GaInP or GaAs that Ge battery 30 direction is arranged, and the 6th doped layer 23 that material is (Al) GaAs.As optional embodiment, the doping type of described 5th doped layer 22 be N-type, the doping type of the 6th doped layer 23 be p-type.
The sub-battery of described GaInP 35 comprise successively according to be gradually distance from the material that Ge battery 30 direction arranges be the 4th back surface field layer 24 of Al (Ga) InP, material be the 4th base 25 of GaInP, material be the 4th launch site 26 of GaInP and the 4th Window layer 27 that material is AlInP.
Superficial growth at the sub-battery of described GaInP 35 has GaAs contact layer 28 as ohmic contact layer.As optional embodiment, the doping type of GaAs contact layer 28 is N-type.
Described GaInP/GaAs/InGaAs/Ge four-junction solar cell farther includes N electrode 36 and P electrode 37.N electrode 36 is positioned at GaAs contact layer 28 surface, and P electrode 37 is positioned at the back side of Ge battery 30.
Second detailed description of the invention
This detailed description of the invention provides a kind of method using formal dress method to prepare GaInP/GaAs/InGaAs/Ge four-junction solar cell.Fig. 2 show the preparation method flow chart of steps of the GaInP/GaAs/InGaAs/Ge four-junction solar cell that this detailed description of the invention provides, and next elaborates the step shown in Fig. 2.
Step S201, it is provided that a Ge battery.
Step S201 farther includes step: provide a p-type Ge substrate being used as Ge battery 30 first base 01；Described Ge substrate is formed first launch site 02 of Ge by P or As Elements Diffusion, to form Ge battery 30.
Step S202, grows the nucleating layer of InGaAs or GaInP, InGaAs cushion, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs and (In) GaAs bonded layer successively at Ge battery surface.The structure chart that the GaInP/GaAs/InGaAs/Ge four-junction solar cell that this detailed description of the invention provides is formed after step S202 is as shown in Figure 3.
Step S202 farther includes step: on InGaAs cushion 04 surface successively according to being gradually distance from the first doped layer 05 that Ge battery 30 direction growth material is GaInP or GaAs and the second doped layer 06 that material is (Al) GaAs, to form the first tunnel knot 31.Wherein, the doping type of the first doped layer 05 be N-type, the doping type of the second doped layer 06 be p-type.
In step S202, the material of described gradual transition layer 07 is AlyGa1-x-yInxAs or Ga1-xInxP, wherein AlyGa1-x-yInxIn As, x is in the range of 0 ~ 0.27, and y is in the range of 0 ~ 0.4, and Ga1-xInxIn P, x is in the range of 0.48 ~ 0.78.The band gap of described gradual transition layer 07 is more than 1.0eV, it is to avoid the photon through InGaAs battery is absorbed by gradual transition layer 07.Al is grown by lattice mutationyGa1-x-yInxAs or Ga1-xInxThe method release stress of P gradual transition layer 07, it is achieved by the transition of the sub-battery of Ge battery 30 to InGaAs 32.
As optional embodiment, AlyGa1-x-yInxAs or Ga1-xInxThe gradual transition layer 07 of P can use In component and Al composition progressive method growth, make Stress Release.As optional embodiment, AlyGa1-x-yInxAs or Ga1-xInxP gradual transition layer 07 can use the method for In component and Al component stepping to grow, and promotes that Stress Release suppresses threading dislocation to arrive active area simultaneously by forming multiple interfaces.As optional embodiment, AlyGa1-x-yInxAs or Ga1-xInxThe gradual transition layer 07 of P can use In component and the method growth that Al composition is progressive and stepping combines to make Stress Release, suppression threading dislocation arrive active area.
Step S202 farther includes step: on gradual transition layer 07 surface successively according to be gradually distance from Ge battery 30 direction growth material be the second back surface field layer 08 of AlGaInAs, material be second base 09 of InGaAs, material be second launch site 10 and second Window layer 11 of InGaAs, wherein, the material of the second Window layer 11 is GaInP, InGaAlAs or AlInP, to form the sub-battery of InGaAs 32.
Step S203, it is provided that a GaAs substrate.
Step S204, the most successively growth GaAs cushion, AlAs sacrifice layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot, the sub-battery of GaInP and GaAs contact layer.The structure chart that the GaInP/GaAs/InGaAs/Ge four-junction solar cell that this detailed description of the invention provides is formed after step S204 is as shown in Figure 4.
Step S204 farther includes step: on GaAs or GaInP bonded layer 17 surface successively according to being gradually distance from the 3rd back surface field layer 18 that direction growth material is GaInP or AlGaAs of GaAs substrate 14, material is the 3rd base 19 of GaAs, material is the 3rd launch site 20 of GaAs and the 3rd Window layer 21 that material is Al (Ga) InP, to form the sub-battery of GaAs 33.
Step S204 farther includes step: on GaAs battery 33 surface successively according to being gradually distance from the 5th doped layer 22 that GaAs battery 33 direction growth material is GaInP or GaAs and the 6th doped layer 23 that material is (Al) GaAs, to form the second tunnel knot 34.
Step S204 farther includes step: on the second tunnel knot 34 surface successively according to being gradually distance from the 4th Window layer 27 of the 4th launch site 26 and AlInP that GaAs battery 33 direction growth material is the 4th back surface field layer 24 of Al (Ga) InP, the 4th base 25 of GaInP, GaInP, to form the sub-battery of GaInP 35.
As optional embodiment, in step S204, between GaAs substrate 14 and GaAs or GaInP bonded layer 17, grow GaAs cushion 15, AlAs sacrifice layer 16 successively；When GaAs substrate 14 removed by needs, selective corrosion liquid is used to be corroded by AlAs sacrifice layer 16, it is achieved the stripping of GaAs substrate 14.Described GaAs cushion 15 is the GaAs material of bradyauxesis, thickness 100-500nm；Described AlAs sacrifice layer 16 thickness is 5-15nm；Described GaAs or GaInP bonded layer 17 thickness is 200-800nm.
Step S205, by GaAs substrate desquamation at GaAs or GaInP bonded layer.
Alternatively, GaAs contact layer 28 is adhered to mutually with the substrate such as Si or glass, then use wet etching to remove GaAs substrate 14, such as use selective corrosion liquid to be corroded by AlAs sacrifice layer 16, it is achieved the stripping of GaAs substrate 14.
Step S206, is bonded (In) GaAs bonded layer with GaAs or GaInP bonded layer.
As optional embodiment, described GaInP/GaAs/InGaAs/Ge four-junction solar cell preparation method farther includes the making step of N electrode, P electrode, including: clean and remove epi-layer surface and the pollutant at the back side；Ge cell backside after cleaning makees P electrode, makes palisade N electrode on GaAs contact layer surface, forms target solaode, as shown in Figure 1.
Above-mentioned steps all uses MOCVD (MetalOrganicChemicalVaporDeposition, metallo-organic compound chemical gaseous phase deposition) or MBE (MolecularBeamEpitaxy, molecular beam epitaxy) mode to grow.
According to mocvd method, then the n-type doping atom of Ge layer is As or P, and remainder layer n-type doping atom is Si, Se, S or Te, and p-type foreign atom is Zn, Mg or C；
According to MBE method, then the n-type doping atom of Ge layer is As or P, and remainder layer n-type doping atom is Si, Se, S, Sn or Te, and p-type foreign atom is Be, Mg or C.
Next one embodiment of the present of invention is given.
The GaInP/GaAs/InGaAs/Ge four-junction solar cell of the present embodiment offer one employing MOCVD method growth, as shown in Figures 3 and 4, including:
(1) the first base 01 being Ge battery 30 with p-type Ge substrate, diffuses to form n-type doping about 2 × 10 at p-type Ge substrate surface by P/As source18cm-3The first launch site 02 of Ge battery 30, thus form Ge battery 30；Then at the nucleating layer 03 of N-type the first launch site 02 superficial growth InGaAs or GaInP, and n-type doping about 3 × 1017cm-3, thickness be the InGaAs cushion 04 of 0.1 micron.
(2) in cushion 04 superficial growth n-type doping concentration more than 1 × 1019cm-3Above, thickness be first doped layer 05 of GaInP or GaAs of 0.015 micron, then in the first doped layer 05 superficial growth p-type doping content more than 1 × 1019cm-3, thickness is second doped layer 06 of (Al) GaAs of 0.015 micron, thus forms the first tunnel knot 31.
(3) in the first tunnel knot 31 superficial growth p-type doping 4 × 1017cm-3, thickness be about the Al of 3 micronsyGa1-x-yInxAs or Ga1-xInxThe gradual transition layer 07 of P, it is achieved Ge battery 30 lattice paprmeter is to InGaAs battery 32 lattice constant transition.
(4) in gradual transition layer 07 superficial growth p-type doping content about 1 × 1018cm-3, thickness be the AlGaInAs layer of 0.1 micron as the second back surface field layer 08 of the sub-battery of InGaAs 32, then in the second back surface field layer 08 superficial growth p-type doping content about 3 × 1017cm-3, thickness be the InGaAs layer of 3.0 microns as the second base 09 of the sub-battery of InGaAs 32, then in the second base 09 superficial growth n-type doping concentration about 2 × 1018cm-3, thickness be the InGaAs layer of 0.2 micron as the second launch site 10 of the sub-battery of InGaAs 32, thickness highly doped in the second launch site 10 superficial growth N-type is that GaInP, InGaAlAs or AlInP layer of 0.05 micron is as the second Window layer 11 of the sub-battery of InGaAs 32.
(5) in the second Window layer 11 superficial growth n-type doping concentration about 4 × 10 of the sub-battery of InGaAs 3218cm-3, the InGaAs bonded layer 12 of thickness 0.5 micron, the lattice paprmeter of the lattice paprmeter of InGaAs bonded layer 12 battery with InGaAs 32 is identical.
(6) the undoped GaAs cushion 15 of growth thickness 0.3 micron on GaAs substrate 14, AlAs sacrifice layer 16 and the p-type doping content about 4 × 10 of next growth 0.01 micron18cm-3, the GaAs bonded layer 17 of thickness 0.5 micron.
(7) in GaAs bonded layer 17 superficial growth p-type doping content about 1 × 1018cm-3, thickness 0.1 micron AlGaAs layer as the 3rd back surface field layer 18 of the sub-battery of GaAs 33, following growing P-type doping content about 1 × 1017cm-3, thickness about 3 microns GaAs layer as the 3rd base 19 of the sub-battery of GaAs 33, in the 3rd base 19 superficial growth n-type doping concentration about 2 × 1018cm-3, thickness 0.15 micron GaAs layer as the 3rd launch site 20 of the sub-battery of GaAs 33, Al (Ga) layer of InP of, thickness 0.05 micron highly doped in one layer of N-type of the 3rd launch site 20 superficial growth is as the 3rd Window layer 21 of the sub-battery of GaAs 33, to reduce the compound of photo-generated carrier.
(8) in GaAs battery 33 superficial growth n-type doping concentration more than 1 × 1019cm-3, the 5th doped layer 22 of GaInP or GaAs of thickness 0.015 micron, in the 5th doped layer 22 superficial growth p-type doping content more than 1 × 1019cm-3Above, the 6th doped layer 23 of (Al) GaAs of thickness 0.015 micron, thus form the second tunnel knot 34；
(9) in the second tunnel knot 34 superficial growth p-type doping content about 2 × 1018cm-3, thickness 0.05 micron Al (Ga) layer of InP as the 4th back surface field layer 24 of the sub-battery of GaInP 35, be about 1 × 10 in the 4th back surface field layer 24 superficial growth p-type doping content17cm-3, thickness 0.5 micron GaInP layer as the 4th base 25 of the sub-battery of GaInP 35, then be about 2 × 10 in the 4th base 25 superficial growth n-type doping concentration18cm-3, thickness 0.2 micron GaInP layer as the 4th launch site 26 of the sub-battery of GaInP 35, the AlInP layer of, thickness 0.02 micron highly doped in the 4th launch site 26 superficial growth N-type is as the 4th Window layer 27 of the sub-battery of GaInP 35.
(10) then it is about 6 × 10 in GaInP battery 35 superficial growth n-type doping concentration18cm-3, thickness 0.5 micron GaAs layer as the contact layer 28 of the sub-battery of GaInP 35, be used for forming Ohmic contact.
(11) use HF acid as selective corrosion liquid, remove AlAs sacrifice layer 16, it is achieved the stripping of GaAs substrate 14；Then InGaAs bonded layer 12 is bonded with GaAs bonded layer 17.
(2) technology for preparing electrode
P electrode 37, N electrode 36 is prepared respectively, it is thus achieved that required solaode, the structure of described solaode is as shown in Figure 1 on contact layer 28 surface of the p-type back side, the first base 01 and N-type GaAs.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.

Claims (7)

1. a GaInP/GaAs/InGaAs/Ge four-junction solar cell, it is characterized in that, including Ge battery, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs, (In) GaAs bonded layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot and the sub-battery of GaInP, the band-gap energy of described four-junction solar cell is respectively 1.89eV, 1.42eV, 1.0eV and 0.67eV, and the thickness of described GaAs or GaInP bonded layer is 200～800nm.
GaInP/GaAs/InGaAs/Ge four-junction solar cell the most according to claim 1, it is characterised in that described Ge battery comprises the first base that material is Ge, and the first launch site that material is Ge arranged on the first base.
GaInP/GaAs/InGaAs/Ge four-junction solar cell the most according to claim 1, it is characterized in that, described Ge battery and the sub-battery of InGaAs are successively set on described Ge substrate according to the direction away from Ge substrate, form band-gap energy and are respectively first double-junction solar battery of 1.0eV, 0.67eV.
GaInP/GaAs/InGaAs/Ge four-junction solar cell the most according to claim 3, it is characterized in that, the sub-battery of described GaAs and the sub-battery of GaInP grow according to the direction away from GaAs substrate, peel off described GaAs substrate, form band-gap energy and be respectively second double-junction solar battery of 1.89eV, 1.42eV.
GaInP/GaAs/InGaAs/Ge four-junction solar cell the most according to claim 4, it is characterized in that, described second double-junction solar battery is bonded by described (In) GaAs bonded layer and GaAs or GaInP bonded layer with described first double-junction solar battery.
6. the preparation method of the GaInP/GaAs/InGaAs/Ge four-junction solar cell described in a claim 1, it is characterised in that include step:
1) a Ge battery is provided；
2) stratum nucleare, the first cushion, the first tunnel knot, gradual transition layer, the sub-battery of InGaAs and (In) GaAs bonded layer are grown into successively at Ge battery surface；
3) a GaAs substrate is provided；
4) growing the second cushion, sacrifice layer, GaAs or GaInP bonded layer, the sub-battery of GaAs, the second tunnel knot, the sub-battery of GaInP and GaAs contact layer the most successively, the thickness of described GaAs or GaInP bonded layer is 200～800nm；
5) GaAs substrate is peeled off；
6) described (In) GaAs bonded layer is bonded with described GaAs or GaInP bonded layer；
The band-gap energy of described four-junction solar cell is respectively 1.89eV, 1.42eV, 1.0eV and 0.67eV.
The preparation method of GaInP/GaAs/InGaAs/Ge four-junction solar cell the most according to claim 6, it is characterised in that step 6) also include afterwards:
7) Ge cell backside after cleaning makes P electrode, and GaAs contact layer surface after cleaning makes palisade N electrode, forms target solaode.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101950774A (en) * 2010-08-17 2011-01-19 中国科学院苏州纳米技术与纳米仿生研究所 Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101950774A (en) * 2010-08-17 2011-01-19 中国科学院苏州纳米技术与纳米仿生研究所 Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery
CN102790118A (en) * 2012-07-19 2012-11-21 中国科学院苏州纳米技术与纳米仿生研究所 GaInP/GaAs/InGaAs/Ge four-junction solar battery and manufacturing method thereof

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