CN103247722B - The manufacture method of four knot cascade solar cells - Google Patents
The manufacture method of four knot cascade solar cells Download PDFInfo
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- CN103247722B CN103247722B CN201310196952.0A CN201310196952A CN103247722B CN 103247722 B CN103247722 B CN 103247722B CN 201310196952 A CN201310196952 A CN 201310196952A CN 103247722 B CN103247722 B CN 103247722B
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Abstract
The invention discloses the manufacture method of a kind of four knot cascade solar cells, adopt InP as supporting substrate, first the InGaAsP/InGaAs binode battery of preparation and InP Lattice Matching in InP substrate; Then on InGaAsP/InGaAs binode battery, prepare an InP bonded layer, and on described InP bonded layer, be bonded a GaAs bonded layer; The last GaInP/GaAs binode battery of preparation and GaAs Lattice Matching on GaAs bonded layer. The present invention is inheriting conventional two knots cascade solar cell photoelectric transformation efficiencies are of a relatively high, stable, on the basis of life-span length, four statement of account sheet efficient solar batteries prepared can obtain high voltage, low current output, thus the ohmic loss effectively reduced in super-high power concentrator solar cell, it is achieved higher photoelectric transformation efficiency.
Description
Technical field
The present invention relates to solar-photovoltaic technology field, manufacture method and the method for particularly relating to a kind of four knot cascade solar cells make the four knot cascade solar cells obtained.
Background technology
As the desirable green energy resource material of one, solar cell becomes the study hotspot of various countries, in order to promote the practical further of solar cell, improves a kind of effective means that its photoelectric transformation efficiency is its reduction cost of electricity-generating.
Laminated cell adopts the sub-serial battery of different energy gap can be greatly enhanced the utilization rate of sunlight, at present research is more and system that technology is comparatively ripe is GaInP/GaAs/Ge tri-junction battery, and the most high conversion efficiency that this material system reaches at present is 32-33%. But battery at the bottom of Ge covers wider spectrum in this three junction battery, its short circuit current is relatively big, in order to the currents match realized with other sub-batteries will necessarily reduce sunlight utilization rate. In order to improve conversion efficiency further, it is necessary to end battery is split, insert, in the middle of at GaAs and Ge battery, the InGaAsN material that a band gap is 1.00eV, make four junction batteries, it is achieved photoelectric current mates, improve battery efficiency.
But the InGaAsN fault in material of preparation is many at present, carrier mobility is low, have impact on the raising of battery performance. Therefore research worker actively seeks other approach to obtain efficient solaode, the InGAs growing 1.0eV at GaAs substrate mismatch is proved to be feasible, in order to save transition zone number, the method being generally adopted upside-down mounting growth, but the relative formal dress growth of device performance decreases. And InGAs and the GaAs of 1.0eV exists the lattice mismatch of 2.1%, its crystal mass is difficult to improve. Bonding such as simple InGaAsP/InGaAs (1.05/0.74eV) the binode battery adopting the GaInP/GaAs (1.9/1.42eV) based on GaAs substrate and InP substrate from the angle of Lattice Matching, conventional wafer bonding techniques is adopted then to need two substrate growth of GaAs and InP, upside-down mounting growth GaAs base binode battery can be adopted and peel off GaAs substrate, but add a step stripping technology, add the difficulty of battery cost of manufacture and processing technology.
How to realize the combination of multijunction solar cell rational band gap, reduce current mismatch and simultaneously and don't improve battery cost of manufacture and difficulty becomes the problem that current III-V II-VI group solar cell needs solution badly.
Summary of the invention
The purpose of the present invention is to propose to the manufacture method of a kind of four knot cascade solar cells, inheriting conventional two knots cascade solar cell photoelectric transformation efficiencies are of a relatively high, stable, on the basis of life-span length, prepare four statement of account sheet efficient solar batteries, to obtain high voltage, low current output, thus the ohmic loss effectively reduced in super-high power concentrator solar cell, it is achieved higher photoelectric transformation efficiency.
In order to realize above-mentioned purpose, present invention employs following technical scheme:
The manufacture method of a kind of four knot cascade solar cells, adopts InP as supporting substrate, first the InGaAsP/InGaAs binode battery of preparation and InP Lattice Matching in InP substrate; Then on InGaAsP/InGaAs binode battery, prepare an InP bonded layer, and on described InP bonded layer, be bonded a GaAs bonded layer; The last GaInP/GaAs binode battery of preparation and GaAs Lattice Matching on GaAs bonded layer; Finally give the four knot cascade solar cells of band-gap energy respectively 1.89/1.42/1.0/0.73eV.
Described InP bonded layer forms tunnel knot with GaAs bonded layer; Preferably, the thickness of described InP bonded layer is 10-50nm; The thickness of described GaAs bonded layer is 0.01-10 μm.
Preferably, prepare concretely comprising the following steps of InGaAsP/InGaAs binode battery, according to the direction away from InP substrate successively grown InP cushion in InP substrate, the sub-battery of InGaAs, the first tunnel knot and the sub-battery of InGaAsP.
Preferably, prepare concretely comprising the following steps of GaInP/GaAs binode battery, GaAs bonded layer grows GaAs cushion successively according to away from the direction on GaAs bonded layer, the sub-battery of GaAs, the second tunnel knot and the sub-battery of GaInP.
It addition, the surface that the method is additionally included in battery makes positive and negative electrode and antireflective film.
It is a further object to provide a kind of four knot cascade solar cells, this solar cell includes the InGaAsP/InGaAs binode battery with InP Lattice Matching and the GaInP/GaAs binode battery with GaAs Lattice Matching, and described InGaAsP/InGaAs binode battery is grown in InP substrate; Described InGaAsP/InGaAs binode battery is provided with an InP bonded layer, described InP bonded layer is bonded with a GaAs bonded layer; Described GaInP/GaAs binode battery is grown on GaAs bonded layer; Described InP bonded layer forms tunnel knot with GaAs bonded layer.
Preferably, the thickness of described InP bonded layer is 10-50nm.
Preferably, the thickness of described GaAs bonded layer is 0.01-10 μm.
Compared with prior art, it is an advantage of the current invention that:
1) the generally conventional outer thickness adopting GaAs substrate is 350 microns, and the present invention adopts the GaAs thin-bed technique of bonding less than 10 microns, directly prepares binode battery on this GaAs bonded layer, is greatly saved the consumption of GaAs substrate; Further, As, as rare metal and extremely toxic substance, reduces it and makes consumption decrease the pollution to environment;
2) present invention is inheriting conventional two knots cascade solar cell photoelectric transformation efficiencies are of a relatively high, stable, on the basis of life-span length, four statement of account sheet efficient solar batteries prepared can obtain high voltage, low current output, thus the ohmic loss effectively reduced in super-high power concentrator solar cell, it is achieved higher photoelectric transformation efficiency.
Accompanying drawing explanation
Fig. 1 is the process flow diagram that one embodiment of the invention prepares four knot cascade solar cells.
Fig. 2 is the structural representation of the InGaAsP/InGaAs binode battery prepared in InP substrate in one embodiment of the invention.
Fig. 3 is the schematic diagram preparing InP bonded layer and GaAs bonded layer in one embodiment of the invention on InGaAsP/InGaAs binode battery.
Fig. 4 is the structural representation of the four knot cascade solar cells that invention one embodiment prepares.
Detailed description of the invention
Below will in conjunction with accompanying drawing embodiment, the present invention will be further described.
As previously mentioned, in view of at present with InGaP/(In) GaAs/Ge tri-ties the photovoltaic technology that tandem solar cell is representative and is still unable to reach and mates with the best of solar spectrum, and make the objective difficulties of lattice mismatch between the semi-conducting material that the solaode that monolithical tandem three is tied and three knots are above exists, the purpose of the present invention is to propose to the manufacture method of a kind of four knot cascade solar cells, inheriting, conventional two knot cascade solar cell photoelectric transformation efficiencies are of a relatively high, stable, on the basis of life-span length, prepare four statement of account sheet efficient solar batteries, to obtain high voltage, low current exports, thus the ohmic loss effectively reduced in super-high power concentrator solar cell, realize higher photoelectric transformation efficiency.
The embodiment of the invention discloses the manufacture method of a kind of four knot cascade solar cells, adopt InP as supporting substrate, first the InGaAsP/InGaAs binode battery of preparation and InP Lattice Matching in InP substrate; Then on InGaAsP/InGaAs binode battery, prepare an InP bonded layer, and on described InP bonded layer, be bonded a GaAs bonded layer; The last GaInP/GaAs binode battery of preparation and GaAs Lattice Matching on GaAs bonded layer; Finally give the four knot cascade solar cells of band-gap energy respectively 1.89/1.42/1.0/0.73eV.
Described InP bonded layer forms tunnel knot with GaAs bonded layer; Preferably, the thickness of described InP bonded layer is 10-50nm; The thickness of described GaAs bonded layer is 0.01-10 μm.
Preferably, prepare concretely comprising the following steps of InGaAsP/InGaAs binode battery, according to the direction away from InP substrate successively grown InP cushion in InP substrate, the sub-battery of InGaAs, the first tunnel knot and the sub-battery of InGaAsP; Prepare concretely comprising the following steps of GaInP/GaAs binode battery, GaAs bonded layer grows GaAs cushion successively according to away from the direction on GaAs bonded layer, the sub-battery of GaAs, the second tunnel knot and the sub-battery of GaInP.
Shown in ginseng Fig. 1 to Fig. 4, the manufacture method of four knot cascade solar cells specifically includes following steps:
S101, adopts InP as supporting substrate, and the InGaAsP/InGaAs binode battery of growth and InP Lattice Matching grows 0.2-1 μm of InP cushion, InGaAs battery, the first tunnel knot, InGaAsP battery successively according to the direction away from InP face.
Wherein InGaAs battery includes, 0.05 μm of P++InP back surface field, 3 μm of P-InGaAs bases, 0.15 μm of n+ launch site, 0.1 μm of n++InP Window layer; First tunnel knot includes, 0.02 μm of n++InGaAs, 0.02 μm of P++InGaAs; InGaAsP battery includes, 0.05 μm of P++InP back surface field, 2.8 μm of P-InGaAsP bases, 0.1 μm of n+InGaAsP launch site, 0.05 μm of n++InP Window layer;
S102, InGaAsP battery is prepared the InP bonded layer that a thickness is 10-50nm, then the P++GaAs material layer being bonded 0.01-10 μm on the face of InP bonded layer forms GaAs bonded layer, forms heterogeneous tunnel knot between described InP bonded layer and GaAs bonded layer;
S103, on GaAs bonded layer, formal dress growth GaInP/GaAs binode battery, grows 0.2-1 μm of GaAs cushion, GaAs battery, the second tunnel knot, GaInP battery, the GaAs contact layer of 0.2-1 μm successively according to the direction away from GaAs face;
Wherein GaAs battery includes 0.05 μm of P++AlGaAs back surface field, 3 μm of p-GaAs bases, the n+GaAs launch site of 0.15 μm, the n++AlInP Window layer of 0.1 μm; Second tunnel knot includes, 0.02 μm of n++GaInP, 0.02 μm of p++AlGaAs; GaInP battery includes 0.05 μm of P++AlGaInP back surface field, 0.7 μm of p-GaInP base, 0.1 μm of n+GaInP launch site, 0.04 μm of AlInP Window layer, 0.5 μm of GaAs contact layer.
S104, followed by the technical process of battery: make positive and negative electrode and antireflective film respectively on the surface of battery, ultimately forms target solaode.
In the present embodiment, N, N+, N++ represent that doping content is～1.0 × 10 respectively17-1.0×1018/cm2,～1.0 × 1018-9.0×1018/cm2,～9.0 × 1018-1.0×1020/cm2; P-, P++ represent that doping content is～1.0 × 10 respectively15-1.0×1018/cm2,～9.0 × 1018-1.0×1020/cm2。
Above-mentioned steps all adopts MOCVD (MetalOrganicChemicalVaporDeposition, metallo-organic compound chemical gaseous phase deposition) or MBE (MolecularBeamEpitaxy, molecular beam epitaxy) mode to grow.
According to mocvd method, then each layer n-type doping atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C;
According to MBE method, then each layer n-type doping atom is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
It should be noted that, in this article, the relational terms of such as first and second or the like is used merely to separate an entity or operation with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially. And, term " includes ", " comprising " or its any other variant are intended to comprising of nonexcludability, so that include the process of a series of key element, method, article or equipment not only include those key elements, but also include other key elements being not expressly set out, or also include the key element intrinsic for this process, method, article or equipment. When there is no more restriction, statement " including ... " key element limited, it is not excluded that there is also other identical element in including the process of described key element, method, article or equipment.
The above is only the detailed description of the invention of the application; it should be pointed out that, for those skilled in the art, under the premise without departing from the application principle; can also making some improvements and modifications, these improvements and modifications also should be regarded as the protection domain of the application.
Claims (5)
1. the manufacture method of a knot cascade solar cell, it is characterised in that: adopt InP as supporting substrate, first the InGaAsP/InGaAs binode battery of preparation and InP Lattice Matching in InP substrate; Then on InGaAsP/InGaAs binode battery, prepare an InP bonded layer, and on described InP bonded layer, be bonded a GaAs bonded layer; The last GaInP/GaAs binode battery of preparation and GaAs Lattice Matching on GaAs bonded layer; Described InP bonded layer forms tunnel knot with GaAs bonded layer;
Wherein, the thickness of described GaAs bonded layer is 0.01-10 μm.
2. the manufacture method of four knot cascade solar cells according to claim 1, it is characterised in that: the thickness of described InP bonded layer is 10-50nm.
3. the manufacture method of four knot cascade solar cells according to claim 1, it is characterized in that: prepare concretely comprising the following steps of InGaAsP/InGaAs binode battery, according to the direction away from InP substrate successively grown InP cushion in InP substrate, the sub-battery of InGaAs, the first tunnel knot and the sub-battery of InGaAsP.
4. the manufacture method of four knot cascade solar cells according to claim 1, it is characterized in that: prepare concretely comprising the following steps of GaInP/GaAs binode battery, GaAs bonded layer grows GaAs cushion successively according to away from the direction on GaAs bonded layer, the sub-battery of GaAs, the second tunnel knot and the sub-battery of GaInP.
5. the manufacture method of four knot cascade solar cells according to claim 1, it is characterised in that: the method is additionally included in the surface of battery and makes positive and negative electrode and antireflective film.
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| CN104979312B (en) * | 2014-04-14 | 2018-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor structure and preparation method thereof |
| CN104916715B (en) * | 2015-05-25 | 2017-09-26 | 中国电子科技集团公司第十八研究所 | A kind of preparation method of quantum dot five-junction solar cell |
| CN113990977B (en) * | 2021-10-26 | 2024-06-25 | 扬州乾照光电有限公司 | Multi-junction solar cell structure and preparation method thereof |
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| CN101950774A (en) * | 2010-08-17 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery |
| CN102651419A (en) * | 2012-05-18 | 2012-08-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Quadruple-junction cascading solar battery and fabrication method thereof |
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| CN101950774A (en) * | 2010-08-17 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery |
| CN102651419A (en) * | 2012-05-18 | 2012-08-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Quadruple-junction cascading solar battery and fabrication method thereof |
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