CN105576068A - Double-face-growing InP five-junction solar battery - Google Patents
Double-face-growing InP five-junction solar battery Download PDFInfo
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- CN105576068A CN105576068A CN201510956796.2A CN201510956796A CN105576068A CN 105576068 A CN105576068 A CN 105576068A CN 201510956796 A CN201510956796 A CN 201510956796A CN 105576068 A CN105576068 A CN 105576068A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 26
- 230000012010 growth Effects 0.000 claims description 24
- 238000010276 construction Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 229910017464 nitrogen compound Inorganic materials 0.000 description 4
- 150000002830 nitrogen compounds Chemical class 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention discloses a double-face-growing InP five-junction solar battery. The double-face-growing InP five-junction solar battery comprises a double-face-polished InP substrate. A (AlxGa1-x)yIn1-yP sub-battery, a AlzGa1-zAs sub-battery, a GamIn1-mP component gradient buffer layer, an InP sub-battery window layer and an InP sub-battery emitter region layer are arranged on the upper surface of the InP substrate. an InP sub-battery back field layer, a GaInAsP sub-battery and a GaInAs sub-battery are arranged on the lower surface of the InP substrate. The (AlxGa1-x)yIn1-yP sub-battery is connected with the AlzGa1-zAs sub-battery through a fourth tunnel junction, the GamIn1-mP component gradient buffer layer is connected with the InP sub-battery window layer through a third tunnel junction, the InP sub-battery back field layer is connected with the GaInAsP sub-battery through a second tunnel junction, the GaInAsP sub-battery is connected with the GaInAs sub-battery through a first tunnel junction.
Description
Technical field
The present invention relates to solar-photovoltaic technology field, particularly relate to a kind of InP five connection solar cell of two-sided growth.
Background technology
Along with improving constantly and the lasting reduction of manufacturing cost of photoelectric conversion efficiency, iii-v multijunction solar cell is widely used in spatial overlay and ground light gathering photovoltaic power generating system.At present, the main product of iii-v multijunction solar cell is GaInP/Ga (In) As/Ge three-junction solar battery, its photoelectric conversion efficiency under AM0 spectrum reaches 30%, but due to difference in band gap larger between Ga (In) As battery and Ge battery, the short circuit current of Ge battery is caused to be that the twice of two knot batteries is above large, due to the current limit reason of cascaded structure, this structure causes a part of spectrum by abundant conversion, can not limit the raising of battery performance.Subsequently, in order to realize solar cell effectively absorbing solar spectral, Duo Jia unit is is researching and developing four-junction solar battery technology, its typical bandgap structure is 1.9/1.42/1.02/0.75eV, owing to can realize the coupling of each sub-cell light electric current, the efficiency of this four-junction solar battery under AM0 spectrum can reach 33-34%.But, to improve the photoelectric conversion efficiency of stacked solar cell, cascade solar cell further, need to continue to increase sub-battery footing.In theory, the footing of stacked solar cell, cascade solar cell is more, and the division of solar spectrum is more careful, and the band gap distribution of battery is also mated more with the energy of solar spectrum, and therefore the thermalization loss of photo-generated carrier can reduce, and corresponding efficiency will improve.Therefore, efficiency can reach five connection solar cells of more than 36% by becoming the direction of multijunction solar cell of future generation research and development, is subject to increasing attention.
The current technological approaches realizing five connection solar cells mainly contains and adopts rare nitrogen compound GaInAsN to prepare coupling five connection solar cell and bonding semiconductor technology two kinds as the sub-battery of 1.0eV.Rare nitrogen compound GaInAsN is wherein adopted to be by epitaxial growth GaInAsN (1.0eV) sub-battery successively on germanium substrate (Ge battery: 0.67eV) as the method for the sub-battery material of 1.0eV, GaInAs (1.4eV) sub-battery, AlGaInAs (1.7eV) sub-battery and AlGaInP (2.05eV) sub-battery form laminated cell structure, but it is poor with the GaInAsN epitaxial material crystal mass of current technological means growth, make the sub-battery performance of 1.0eV lower, thus cause laminated cell whole efficiency low.And bonding semiconductor technology relates to two kinds of preparation methods, one is difference back growth AlGaInP (2.05eV) sub-battery on gaas substrates, AlGaInAs (1.7eV) sub-battery and GaInAs (1.4eV) sub-battery and in InP substrate forward growth GaInAs (0.75eV) sub-battery and GaInAsP (1.05eV) sub-battery, then by bonding semiconductor technique sub-for these two parts battery is bonded to and forms five connection solar cells together; Another kind is first back growth AlGaInP (2.05eV) sub-battery successively on gaas substrates, AlGaInAs (1.7eV) sub-battery, GaAs (1.42eV), GaInAs (1.0eV) and GaInAs (0.75eV) sub-battery, be bonded in the support substrates such as such as Si again, final etching is fallen GaAs substrate and is obtained five connection solar cells, but these methods relate to bonding semiconductor technology, complex process can cause the increase of battery cost.Therefore, adopt the InP substrate of twin polishing, first AlGaInP is prepared at InP substrate upper surface, AlGaAs and InP battery, prepare the sub-battery of GaInAsP and GaInAs at lower surface again, final formation bandgap structure is five connection solar cells of 2.06/1.7/1.37/1.05/0.75eV, and the bandgap structure of this battery can reach the optimum Match with solar spectrum on the one hand, improve open circuit voltage and the fill factor, curve factor of multijunction cell, then improve the photoelectric conversion efficiency of battery.On the other hand, this method avoid the complex technology techniques such as the comparatively difficult compound-material of the growths such as the rare nitrogen compound GaInAsN of growth and bonding semiconductor technology, reduce preparation difficulty and the cost of battery.
Summary of the invention
The technical problem to be solved in the present invention is: InP five connection solar cell providing a kind of two-sided growth.By the method in the two-sided growth of InP substrate upper and lower surface, obtain by (Al
xga
1-x)
yin
1-ythe sub-battery of P, Al
zga
1-zfive knot stacked solar cell, cascade solar cells of the sub-battery composition of As battery, InP battery, the sub-battery of GaInAsP and GaInAs, the bandgap structure of battery can be made to reach the optimum Match with solar spectrum, play the advantage of iii-v stacked solar cell, cascade solar cell, and improve open circuit voltage and the fill factor, curve factor of battery, then improve the photoelectric conversion efficiency of battery.
The technical scheme that the present invention takes for the technical problem existed in solution known technology is:
InP five connection solar cell for two-sided growth, comprises the InP substrate of twin polishing; This InP substrate comprises a upper surface and a lower surface;
Described InP substrate is as InP battery base layer;
Described InP battery base layer upper surface be configured with InP battery emitter layer; InP battery Window layer is configured with at the upper surface of described InP battery emitter layer; Ga is configured with at the upper surface of described InP battery Window layer
min
1-mp component-gradient buffer layer; At described Ga
min
1-mthe upper surface of P component-gradient buffer layer is configured with Al
zga
1-zas battery; At described Al
zga
1-zthe upper surface of As battery is configured with (Al
xga
1-x)
yin
1-ythe sub-battery of P; Wherein: the upper surface of described InP battery Window layer and Ga
min
1-mconnected by the 3rd tunnel junction between P component-gradient buffer layer; Described Al
zga
1-zthe upper surface of As battery and (Al
xga
1-x)
yin
1-yconnected by the 4th tunnel junction between the sub-battery of P;
Described InP battery base layer lower surface be configured with InP cell back field layer; The sub-battery of GaInAsP is configured with at the lower surface of described InP cell back field layer; The sub-battery of GaInAs is configured with at the lower surface of the sub-battery of described GaInAsP; Connected by the second tunnel junction between the lower surface of described InP cell back field layer and the sub-battery of GaInAsP; Connected by the first tunnel junction between the lower surface of the sub-battery of described GaInAsP and the sub-battery of GaInAs;
Described Al
zga
1-zas battery and (Al
xga
1-x)
yin
1-ythe sub-battery Lattice Matching of P; Described InP battery Window layer, InP battery emitter layer, InP cell back field layer, the sub-battery of GaInAsP and the sub-battery Lattice Matching of GaInAs.
Further: described (Al
xga
1-x)
yin
1-y(the Al that the sub-battery of P configures from top to bottom successively
nga
1-n)
yin
1-yp Window layer, (Al
xga
1-x)
yin
1-yp emitter region, (Al
xga
1-x)
yin
1-yp base, (Al
nga
1-n)
yin
1-yp back surface field layer; Described (Al
nga
1-n)
yin
1-yp back surface field layer is by the 4th tunnel junction and Al
zga
1-zas battery connects; Wherein: described (Al
xga
1-x)
yin
1-ythe y value of P material be 0.5, x value in 0 ~ 0.5 interval, corresponding (Al
xga
1-x)
yin
1-yp material band gap is in 1.85eV ~ 2.23eV interval; Described (Al
nga
1-n)
yin
1-ythe y value of P material be 0.5, n value in 0 ~ 1 interval, corresponding (Al
nga
1-n)
yin
1-yp material band gap is in 1.85eV ~ 2.3eV interval.
Further: described Al
zga
1-zas battery includes GaInP Window layer from top to bottom successively according to laminated construction, Al
zga
1-zas emitter region, Al
zga
1-zas base, GaInP back surface field layer; Wherein: z value in 0 ~ 0.35 interval, corresponding A l
zga
1-zas material band gap is in 1.42eV ~ 1.85eV interval.
Further: described Ga
min
1-mthe m value of P component-gradient buffer layer from top to bottom in 0.52 ~ 0 interval gradual change, corresponding lattice constant from Al
zga
1-zas coupling fades to and mates with InP, be namely
interval gradual change.
Further: described InP battery Window layer, InP emitter layer, InP substrate, InP cell back field layer forms InP battery jointly.
Further: the sub-battery of described GaInAsP includes InP Window layer from top to bottom successively according to laminated construction, GaInAsP emitter region, GaInAsP base, InP back surface field layer; Described InP Window layer is connected with InP cell back field layer by the second tunnel junction.
Further: the sub-battery of described GaInAs includes GaInAs Window layer from top to bottom successively according to laminated construction, GaInAs emitter region, GaInAs base, GaInAs back surface field layer; Described GaInAs Window layer is connected with InP back surface field layer by the first tunnel junction.
The advantage that the present invention has and good effect are:
The present invention utilizes the two-sided substrate of InP simultaneously as support substrates and InP battery base layer, and arranges (Al at the upper surface of InP substrate
xga
1-x)
yin
1-yp and Al
zga
1-zas battery, InP battery Window layer and InP battery emitter layer, arrange InP cell back field layer at its lower surface, and the sub-battery of GaInAsP and GaInAs finally obtains (the Al that band gap is combined as 2.06/1.7/1.37/1.05/0.75eV
xga
1-x)
yin
1-yp/Al
zga
1-zas/InP/GaInAsP/GaInAs five junction battery, the bandgap structure of battery can be made to realize mating with solar spectrum, improve open circuit voltage and the fill factor, curve factor of multijunction cell, then the photoelectric conversion efficiency of battery is improved, also avoid the complex technology techniques such as the comparatively difficult compound-material of the growths such as the rare nitrogen compound GaInAsN of growth and bonding semiconductor technology, reduce preparation difficulty and the cost of battery.
Accompanying drawing illustrates:
Fig. 1 is the structure chart of the preferred embodiment of the present invention;
Wherein: 1, the first tunnel junction; 2, the second tunnel junction; 3, the 3rd tunnel junction; 4, the 4th tunnel junction; 5, InP cell back field layer; 6, InP battery emitter layer; 7, InP battery Window layer.
Embodiment
For summary of the invention of the present invention, Characteristic can be understood further, hereby exemplify following examples, and coordinate accompanying drawing to be described in detail as follows:
Refer to Fig. 1, a kind of InP five connection solar cell of two-sided growth, comprise the P type InP substrate of twin polishing (in the present embodiment, concrete selection P type InP substrate, but also can select N-type InP substrate in practical application, the conduction type of other layers of materials need be adjusted accordingly), described InP substrate is simultaneously as the base layer of InP battery; (Al is disposed with from top to bottom according to laminated construction at the upper surface of described InP battery
xga
1-x)
yin
1-ythe sub-battery of P, Al
zga
1-zas battery, Ga
min
1-mp component-gradient buffer layer, InP battery Window layer and InP battery emitter layer; InP cell back field layer is disposed with from top to bottom according to laminated construction, the sub-battery of GaInAsP and the sub-battery of GaInAs at described InP battery lower surface.Described (Al
xga
1-x)
yin
1-ythe sub-battery of P and Al
zga
1-zconnected by the 4th tunnel junction 4 between As battery, described Ga
min
1-mconnected by the 3rd tunnel junction 3 between P component-gradient buffer layer and InP battery Window layer, connected by the second tunnel junction 2 between described InP cell back field layer and the sub-battery of GaInAsP, connected by the first tunnel junction 1 between the sub-battery of GaInAsP and the sub-battery of GaInAs; Described (Al
xga
1-x)
yin
1-ythe sub-battery of P and Al
zga
1-zas battery Lattice Matching; Described InP battery Window layer 7, InP battery emitter layer 6, InP cell back field layer 5, the sub-battery of GaInAsP and the sub-battery Lattice Matching of GaInAs.
Described (Al
xga
1-x)
yin
1-ythe internal structure of the sub-battery of P includes N-type (Al from top to bottom successively according to laminated construction
nga
1-n)
yin
1-yp Window layer, N-type (Al
xga
1-x)
yin
1-yp emitter region, P type (Al
xga
1-x)
yin
1-yp base, P type (Al
nga
1-n)
yin
1-yp back surface field layer; Wherein said (Al
xga
1-x)
yin
1-yp material, y value be 0.5, x value in 0 ~ 0.5 interval, corresponding (Al
xga
1-x)
yin
1-yp material band gap is in 1.85eV ~ 2.23eV interval, and in the present embodiment, x value gets 0.25, corresponding (Al
xga
1-x)
yin
1-yp material band gap is at about 2.06eV, and lattice constant is about
wherein said (Al
nga
1-n)
yin
1-yp material, y value be 0.5, n value in 0 ~ 1 interval, corresponding (Al
nga
1-n)
yin
1-yp material band gap is in 1.85eV ~ 2.3eV interval, and in the present embodiment, n value gets 1, corresponding (Al
xga
1-x)
yin
1-yp material band gap is at about 2.3eV, and lattice constant is about
Described Al
zga
1-zas battery includes N-type GaInP Window layer from top to bottom successively according to laminated construction, N-type Al
zga
1-zas emitter region, P type Al
zga
1-zas base, P type GaInP back surface field layer; Wherein said Al
zga
1-zin As battery, z value in 0 ~ 0.35 interval, corresponding A l
zga
1-zas material band gap is in 1.42eV ~ 1.85eV interval, and in the present embodiment, x value gets 0.22, corresponding A l
zga
1-zas material band gap at about 1.7eV, lattice constant
substantially with (Al
xga
1-x)
yin
1-ythe sub-battery Lattice Matching of P.
Described Ga
min
1-mp component-gradient buffer layer, m value is in 0.52 ~ 0 interval gradual change from top to bottom, corresponding lattice constant from Al
zga
1-zas coupling fades to mates with InP, namely exists
interval gradual change.
Described InP battery Window layer is N-type InP material, and InP battery emitter layer is N-type InP material, and InP cell back field layer is P type InP material, and above-mentioned three-decker and P type InP substrate form InP battery jointly;
The sub-battery of described GaInAsP includes N-type InP Window layer from top to bottom successively according to laminated construction, N-type GaInAsP emitter region, P type GaInAsP base, P type InP back surface field layer;
The sub-battery of described GaInAs includes N-type GaInAs Window layer from top to bottom successively according to laminated construction, N-type GaInAs emitter region, P type GaInAs base, P type GaInAs back surface field layer.
Be the concrete preparation process of InP five connection solar cell of the above-mentioned two-sided growth of the present embodiment below, as follows:
First, with the P type InP single-chip of 2 inches of twin polishings for substrate, then metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy technique (MBE) or chemical beam epitaxy technology (CBE) is adopted to grow N-type InP battery emitter layer 6 successively at InP substrate upper surface, N-type InP battery Window layer 7,3rd tunnel junction 3, Ga
min
1-mp component-gradient buffer layer, Al
zga
1-zas battery, the 4th tunnel junction 4 and (Al
xga
1-x)
yin
1-ythe sub-battery of P, then InP substrate is overturn 180 °, finally at InP substrate lower surface successively growing P-type InP cell back field layer 5, second tunnel junction 2, the sub-battery of GaInAsP, the first tunnel junction 1 and the sub-battery of GaInAs, can complete the preparation of InP five connection solar cell of two-sided growth.
In sum, the present invention utilizes the InP substrate of twin polishing, and InP substrate upper surface is provided with the (Al that band gap is 2.06eV
xga
1-x)
yin
1-ythe Al of P, 1.7eV
zga
1-zas battery, arranging band gap at lower surface is the sub-battery of GaInAsP of 1.05eV and the sub-battery of GaInAs of 0.75eV, and by InP battery Window layer, InP battery emitter layer, InP substrate and InP cell back field layer form the InP battery that band gap is 1.37eV, finally obtain (the Al that bandgap structure is 2.06/1.7/1.37/1.05/0.75eV
xga
1-x)
yin
1-yp/Al
zga
1-zas/InP/GaInAsP/GaInAs five connection solar cell, such bandgap structure can realize and the mating of solar spectrum, and improves the photoelectric conversion efficiency of battery.
Above embodiments of the invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All changes and improvement etc. done according to the present patent application scope, all should still belong within patent covering scope of the present invention.
Claims (7)
1. InP five connection solar cell for two-sided growth, comprises the InP substrate of twin polishing; This InP substrate comprises a upper surface and a lower surface; It is characterized in that:
Described InP substrate is as InP battery base layer;
InP battery emitter layer is configured with at the upper surface of described InP battery base layer; InP battery Window layer is configured with at the upper surface of described InP battery emitter layer; Ga is configured with at the upper surface of described InP battery Window layer
min
1-mp component-gradient buffer layer; At described Ga
min
1-mthe upper surface of P component-gradient buffer layer is configured with Al
zga
1-zas battery; At described Al
zga
1-zthe upper surface of As battery is configured with (Al
xga
1-x)
yin
1-ythe sub-battery of P; Wherein: the upper surface of described InP battery Window layer and Ga
min
1-mconnected by the 3rd tunnel junction between P component-gradient buffer layer; Described Al
zga
1-zthe upper surface of As battery and (Al
xga
1-x)
yin
1-yconnected by the 4th tunnel junction between the sub-battery of P;
Described InP battery base layer lower surface be configured with InP cell back field layer; The sub-battery of GaInAsP is configured with at the lower surface of described InP cell back field layer; The sub-battery of GaInAs is configured with at the lower surface of the sub-battery of described GaInAsP; Connected by the second tunnel junction between the lower surface of described InP cell back field layer and the sub-battery of GaInAsP; Connected by the first tunnel junction between the lower surface of the sub-battery of described GaInAsP and the sub-battery of GaInAs;
Described Al
zga
1-zas battery and (Al
xga
1-x)
yin
1-ythe sub-battery Lattice Matching of P; Described InP battery Window layer, InP battery emitter layer, InP cell back field layer, the sub-battery of GaInAsP and the sub-battery Lattice Matching of GaInAs.
2. InP five connection solar cell of two-sided growth according to claim 1, is characterized in that: described (Al
xga
1-x)
yin
1-y(the Al that the sub-battery of P configures from top to bottom successively
nga
1-n)
yin
1-yp Window layer, (Al
xga
1-x)
yin
1-yp emitter region, (Al
xga
1-x)
yin
1-yp base, (Al
nga
1-n)
yin
1-yp back surface field layer; Described (Al
nga
1-n)
yin
1-yp back surface field layer is by the 4th tunnel junction and Al
zga
1-zas battery connects; Wherein: described (Al
xga
1-x)
yin
1-ythe y value of P material be 0.5, x value in 0 ~ 0.5 interval, corresponding (Al
xga
1-x)
yin
1-yp material band gap is in 1.85eV ~ 2.23eV interval; Described (Al
nga
1-n)
yin
1-ythe y value of P material be 0.5, n value in 0 ~ 1 interval, corresponding (Al
nga
1-n)
yin
1-yp material band gap is in 1.85eV ~ 2.3eV interval.
3. InP five connection solar cell of two-sided growth according to claim 1, is characterized in that: described Al
zga
1-zas battery includes GaInP Window layer from top to bottom successively according to laminated construction, Al
zga
1-zas emitter region, Al
zga
1-zas base, GaInP back surface field layer; Wherein: z value in 0 ~ 0.35 interval, corresponding A l
zga
1-zas material band gap is in 1.42eV ~ 1.85eV interval.
4. InP five connection solar cell of two-sided growth according to claim 1, is characterized in that: described Ga
min
1-mthe m value of P component-gradient buffer layer from top to bottom in 0.52 ~ 0 interval gradual change, corresponding lattice constant from Al
zga
1-zas coupling fades to and mates with InP, be namely
interval gradual change.
5. InP five connection solar cell of two-sided growth according to claim 1, is characterized in that: described InP battery Window layer, InP battery emitter layer, and InP substrate, InP cell back field layer forms InP battery jointly.
6. InP five connection solar cell of two-sided growth according to claim 1, is characterized in that: the sub-battery of described GaInAsP includes InP Window layer from top to bottom successively according to laminated construction, GaInAsP emitter region, GaInAsP base, InP back surface field layer; Described InP Window layer is connected with InP cell back field layer by the second tunnel junction.
7. InP five connection solar cell of two-sided growth according to claim 6, is characterized in that: the sub-battery of described GaInAs includes GaInAs Window layer from top to bottom successively according to laminated construction, GaInAs emitter region, GaInAs base, GaInAs back surface field layer; Described GaInAs Window layer is connected with InP back surface field layer by the first tunnel junction.
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