CN105576068B - Double-face-growing InP five-junction solar battery - Google Patents
Double-face-growing InP five-junction solar battery Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The invention discloses a double-face-growing InP five-junction solar battery. The double-face-growing InP five-junction solar battery comprises a double-face-polished InP substrate. A (AlxGa1-x)yIn1-yP sub-battery, a AlzGa1-zAs sub-battery, a GamIn1-mP component gradient buffer layer, an InP sub-battery window layer and an InP sub-battery emitter region layer are arranged on the upper surface of the InP substrate. an InP sub-battery back field layer, a GaInAsP sub-battery and a GaInAs sub-battery are arranged on the lower surface of the InP substrate. The (AlxGa1-x)yIn1-yP sub-battery is connected with the AlzGa1-zAs sub-battery through a fourth tunnel junction, the GamIn1-mP component gradient buffer layer is connected with the InP sub-battery window layer through a third tunnel junction, the InP sub-battery back field layer is connected with the GaInAsP sub-battery through a second tunnel junction, the GaInAsP sub-battery is connected with the GaInAs sub-battery through a first tunnel junction.
Description
Technical field
The present invention relates to solar-photovoltaic technology field, five connection solar cells of InP of more particularly to a kind of two-sided growth.
Background technology
With the continuous improvement and the lasting reduction of manufacturing cost of photoelectric transformation efficiency, iii-v multijunction solar cell quilt
It is widely used in spatial overlay and ground light gathering photovoltaic power generating system.At present, the main flow of iii-v multijunction solar cell is produced
Product are GaInP/Ga (In) As/Ge three-junction solar batteries, and its photoelectric transformation efficiency under AM0 spectrum has reached 30%, but
Due to difference in band gap larger between Ga (In) As batteries and Ge batteries, the short circuit current for causing Ge batteries is two knot above
The twice of sub- battery is big, and due to the current limit reason of cascaded structure, this structure causes a part of spectrum can not be abundant
Conversion, limits the raising of battery performance.Subsequently, it is sharp in order to realize effective absorption of the solar cell to solar spectral
With, many units are researching and developing four-junction solar battery technology, and its typical bandgap structure is 1.9/1.42/1.02/0.75eV, by
In the matching that can realize each sub- cell light electric current, efficiency of this four-junction solar battery under AM0 spectrum can reach 33-
34%.But, to the photoelectric transformation efficiency for further improving stacked solar cell, cascade solar cell, need to continue to increase sub- battery knot number.Reason
For upper, the knot number of stacked solar cell, cascade solar cell is more, and the division of solar spectrum is more careful, and the band gap of battery is distributed and solar spectrum
Energy also more match, therefore photo-generated carrier transconversion into heat loss can reduce, corresponding efficiency will be improved.Therefore, efficiency
Five connection solar cells that more than 36% can be reached will become the direction of multijunction solar cell research and development of future generation, by more and more
Attention.
Currently realize that the technological approaches of five connection solar cells mainly have sub as 1.0eV using dilute nitrogen compound GaInAsN
Battery prepares two kinds of five connection solar cells of matching and bonding semiconductor technology.Dilute nitrogen compound GaInAsN conducts are adopted wherein
The method of the sub- battery materials of 1.0eV is by germanium substrate (Ge batteries：Epitaxial growth GaInAsN successively on 0.67eV)
(1.0eV) sub- battery, the sub- batteries of GaInAs (1.4eV), the sub- batteries of AlGaInAs (1.7eV) and AlGaInP (2.05eV) son electricity
Pond is constituting laminated cell structure, but the GaInAsN epitaxial material crystal mass grown with current technology means is poor so that
The sub- battery performances of 1.0eV are relatively low, so as to cause laminated cell whole efficiency low.And bonding semiconductor technology is related to two kinds and prepares
Method, one kind are to distinguish the sub- battery of back growth AlGaInP (2.05eV) on gaas substrates, AlGaInAs (1.7eV) son electricity
Pond and the sub- batteries of GaInAs (1.4eV) and in InP substrate the sub- battery of positive growth GaInAs (0.75eV) and GaInAsP
(1.05eV) sub- battery, then this two parts battery is bonded to by five knot sun electricity of composition together by bonding semiconductor technique
Pond；Another kind is the first sub- battery of back growth AlGaInP (2.05eV) successively on gaas substrates, and AlGaInAs (1.7eV) is sub
Battery, GaAs (1.42eV), GaInAs (1.0eV) and the sub- batteries of GaInAs (0.75eV), then it is bonded to Si etc.
On support substrate, final etching is fallen GaAs substrates and obtains five connection solar cells, but these methods are related to bonding semiconductor technology, technique
Complexity can cause the increase of battery cost.Therefore, using the InP substrate of twin polishing, first prepare in InP substrate upper surface
AlGaInP, AlGaAs and InP battery, then the sub- batteries of GaInAsP and GaInAs are prepared in lower surface, ultimately form band gap knot
Five connection solar cells of the structure for 2.06/1.7/1.37/1.05/0.75eV, on the one hand the bandgap structure of the battery can reach with
The best match of solar spectrum, improves the open-circuit voltage and fill factor, curve factor of multijunction cell, improves then the opto-electronic conversion effect of battery
Rate.On the other hand, this method avoid the more difficult compound-material of the growth such as dilute nitrogen compound GaInAsN of growth and partly lead
The complex technology technique such as body bonding techniques, reduces preparation difficulty and the cost of battery.
The content of the invention
The technical problem to be solved in the present invention is：A kind of five connection solar cells of InP of two-sided growth are provided.By in InP
The method of the two-sided growth of substrate upper and lower surface, obtains by (AlxGa1-x)yIn1-yThe sub- batteries of P, AlzGa1-zAs batteries, InP are electric
Five knot stacked solar cell, cascade solar cells of the sub- battery composition of pond, the sub- batteries of GaInAsP and GaInAs, reach can the bandgap structure of battery
With the best match of solar spectrum, the advantage of iii-v stacked solar cell, cascade solar cell is played, and improves open-circuit voltage and the filling of battery
The factor, improves the photoelectric transformation efficiency of battery then.
The present invention is adopted the technical scheme that by solving technical problem present in known technology：
A kind of five connection solar cells of InP of two-sided growth, including the InP substrate of twin polishing；The InP substrate is included on one
Surface and a lower surface；
The InP substrate is used as InP battery base layers；
InP battery emitter layers are configured with the upper surface of the InP batteries base layer；It is electric in InP
The upper surface of pond emitter layer is configured with InP battery Window layer；It is configured with the upper surface of the InP batteries Window layer
GamIn1-mP component-gradient buffer layers；In the GamIn1-mThe upper surface of P component-gradient buffer layers is configured with AlzGa1-zAs is electric
Pond；In the AlzGa1-zThe upper surface of As batteries is configured with (AlxGa1-x)yIn1-yThe sub- batteries of P；Wherein：The InP batteries
The upper surface and Ga of Window layermIn1-mConnected by the 3rd tunnel knot between P component-gradient buffer layers；The AlzGa1-zAs is electric
The upper surface and (Al in pondxGa1-x)yIn1-yConnected by the 4th tunnel knot between the sub- batteries of P；
InP cell back field layers are configured with the lower surface of the InP batteries base layer；In the InP batteries
The lower surface of back surface field layer is configured with the sub- batteries of GaInAsP；GaInAs electricity is configured with the lower surface of the sub- batteries of the GaInAsP
Pond；Connected by the second tunnel knot between the lower surface and the sub- batteries of GaInAsP of the InP cell back fields layer；It is described
Connected by the first tunnel knot between the lower surface and the sub- batteries of GaInAs of the sub- batteries of GaInAsP；
The AlzGa1-zAs batteries and (AlxGa1-x)yIn1-yThe sub- battery Lattice Matchings of P；The InP batteries window
Layer, InP battery emitter layers, InP cell back field layers, the sub- batteries of GaInAsP and the sub- battery Lattice Matchings of GaInAs.
Further：(the AlxGa1-x)yIn1-yThe sub- batteries of P include the (Al for configuring successively from top to bottomnGa1-n)yIn1-yP
Window layer, (AlxGa1-x)yIn1-yP launch sites, (AlxGa1-x)yIn1-yP bases, (AlnGa1-n)yIn1-yP back surface field layers；It is described
(AlnGa1-n)yIn1-yP back surface field layers pass through the 4th tunnel knot and AlzGa1-zAs batteries connect；Wherein：(the AlxGa1-x)yIn1-yThe y values of P materials are that 0.5, x values are interval interior 0～0.5, correspondence (AlxGa1-x)yIn1-yP material band gaps 1.85eV～
2.23eV in interval；(the AlnGa1-n)yIn1-yThe y values of P materials are that 0.5, n values are interval interior 0～1, correspondence (AlnGa1-n)yIn1-yP material band gaps are in 1.85eV～2.3eV is interval.
Further：The AlzGa1-zAs batteries include GaInP Window layer from top to bottom successively according to laminated construction,
AlzGa1-zAs launch sites, AlzGa1-zAs bases, GaInP back surface field layers；Wherein：In z values are interval 0～0.35, corresponding A lzGa1- zAs material band gaps are in 1.42eV～1.85eV is interval.
Further：The GamIn1-mThe m values of P component-gradient buffer layers are from top to bottom in 0.52～0 interval gradual change, correspondence
Lattice paprmeter from AlzGa1-zAs matching fade to match with InP, beInterval gradual change.
Further：The InP batteries Window layer, InP emitter layers, InP substrate, the common structure of InP cell back field layers
Into InP batteries.
Further：The sub- battery of the GaInAsP includes InP Window layer from top to bottom successively according to laminated construction,
GaInAsP launch sites, GaInAsP bases, InP back surface field layers；The InP Window layer is carried on the back with InP batteries by the second tunnel knot
Field layer connection.
Further：The sub- battery of the GaInAs includes GaInAs Window layer from top to bottom successively according to laminated construction,
GaInAs launch sites, GaInAs bases, GaInAs back surface field layers；The GaInAs Window layer is by the first tunnel knot and InP back surface fields
Layer connection.
The present invention has the advantages and positive effects that：
The present invention utilizes the two-sided substrates of InP while as support substrate and InP battery base layers, and in InP substrate
Upper surface arranges (AlxGa1-x)yIn1-yP and AlzGa1-zAs batteries, InP batteries Window layer and InP battery emitter layers,
InP cell back field layers are set in its lower surface, the sub- batteries of GaInAsP and GaInAs finally give band gap and are combined as 2.06/
1.7/1.37/1.05/0.75eV (AlxGa1-x)yIn1-yP/AlzGa1-zFive junction batteries of As/InP/GaInAsP/GaInAs, can
So that the bandgap structure of battery is realized matching with solar spectrum, the open-circuit voltage and fill factor, curve factor of multijunction cell is improved, is carried then
The photoelectric transformation efficiency of high battery, it is thus also avoided that the more difficult compound-material of growth such as dilute nitrogen compound GaInAsN of growth
With the complex technology technique such as bonding semiconductor technology, preparation difficulty and the cost of battery is reduced.
Description of the drawings：
Fig. 1 is the structure chart of the preferred embodiment of the present invention；
Wherein：1st, the first tunnel knot；2nd, the second tunnel knot；3rd, the 3rd tunnel knot；4th, the 4th tunnel knot；5th, InP batteries
Back surface field layer；6th, InP batteries emitter layer；7th, InP batteries Window layer.
Specific embodiment
For the content of the invention, feature and effect of the present invention can be further appreciated that, following examples are hereby enumerated, and coordinates accompanying drawing
Describe in detail as follows：
Refer to Fig. 1, a kind of five connection solar cells of InP of two-sided growth, the p-type InP substrate including twin polishing is (at this
In embodiment, specifically chosen p-type InP substrate, but N-type InP substrate, the conduction of other layers of materials in practical application, also may be selected
Type need to be adjusted accordingly), InP substrate base layer simultaneously as InP batteries；In the upper table of the InP batteries
Face is disposed with (Al from top to bottom according to laminated constructionxGa1-x)yIn1-yThe sub- batteries of P, AlzGa1-zAs batteries, GamIn1-mP
Component-gradient buffer layer, InP batteries Window layer and InP battery emitter layers；In the InP battery lower surfaces according to folded
Rotating fields are disposed with InP cell back field layers, the sub- batteries of GaInAsP and the sub- batteries of GaInAs from top to bottom.It is described
(AlxGa1-x)yIn1-yThe sub- batteries of P and AlzGa1-zConnected by the 4th tunnel knot 4 between As batteries, the GamIn1-mP components
Connected by the 3rd tunnel knot 3 between graded buffer layer and InP battery Window layer, the InP cell back fields layer and
Connected by the second tunnel knot 2 between the sub- batteries of GaInAsP, between the sub- batteries of GaInAsP and the sub- batteries of GaInAs, pass through first
Tunnel knot 1 connects；(the AlxGa1-x)yIn1-yThe sub- batteries of P and AlzGa1-zAs battery Lattice Matchings；The InP battery windows
Mouth layer 7, InP batteries emitter layer 6, the sub- battery of InP cell back fields layer 5, GaInAsP and the sub- battery lattices of GaInAs
Match somebody with somebody.
(the AlxGa1-x)yIn1-yThe internal structure of the sub- batteries of P includes N-type from top to bottom successively according to laminated construction
(AlnGa1-n)yIn1-yP Window layer, N-type (AlxGa1-x)yIn1-yP launch sites, p-type (AlxGa1-x)yIn1-yP bases, p-type
(AlnGa1-n)yIn1-yP back surface field layers；Wherein described (AlxGa1-x)yIn1-yP materials, y values are that 0.5, x values are interval interior 0～0.5,
Correspondence (AlxGa1-x)yIn1-yIn 1.85eV～2.23eV is interval, and in the present embodiment, x values take 0.25 to P material band gaps, right
Answer (AlxGa1-x)yIn1-yP material band gaps are about in 2.06eV or so, lattice paprmeterWherein described (AlnGa1-n)yIn1-yP materials, y values are that 0.5, n values are interval interior 0～1, correspondence (AlnGa1-n)yIn1-yP material band gaps are in 1.85eV～2.3eV
In interval, and in the present embodiment, n values take 1, correspondence (AlxGa1-x)yIn1-y, in 2.3eV or so, lattice paprmeter is about for P material band gaps
For
The AlzGa1-zAs batteries include N-type GaInP Window layer, N-type from top to bottom successively according to laminated construction
AlzGa1-zAs launch sites, p-type AlzGa1-zAs bases, p-type GaInP back surface field layer；Wherein described AlzGa1-zIn As batteries, z values
Interval interior, corresponding A l 0～0.35zGa1-zAs material band gaps are interval interior in 1.42eV～1.85eV, and in the present embodiment, x
Value takes 0.22, corresponding A lzGa1-zAs material band gaps are in 1.7eV or so, lattice paprmeterSubstantially with (AlxGa1-x)yIn1-yP
Sub- battery Lattice Matching.
The GamIn1-mP component-gradient buffer layers, in 0.52～0 interval gradual change, corresponding lattice is normal for m values from top to bottom
Number from AlzGa1-zAs matchings fade to match with InP, that is, existInterval gradual change.
The InP batteries Window layer is N-type InP material, and InP batteries emitter layer is N-type InP material, and InP is electric
Pond back surface field layer is p-type InP material, and above-mentioned three-decker and p-type InP substrate collectively form InP batteries；
The sub- battery of the GaInAsP includes N-type InP Window layer, N-type from top to bottom successively according to laminated construction
GaInAsP launch sites, p-type GaInAsP base, p-type InP back surface field layer；
The sub- battery of the GaInAs includes N-type GaInAs Window layer, N-type from top to bottom successively according to laminated construction
GaInAs launch sites, p-type GaInAs base, p-type GaInAs back surface field layer.
It is the concrete preparation process of five connection solar cells of InP of the above-mentioned two-sided growth of the present embodiment below, it is as follows：
First, the p-type InP single-chip with 2 inches of twin polishings is as substrate, then using metal organic chemical vapor deposition
Or molecular beam epitaxy technique (MBE) or chemical beam epitaxy technology (CBE) grow N-type successively in InP substrate upper surface (MOCVD)
InP batteries emitter layer 6, N-type InP batteries Window layer 7, the 3rd tunnel knot 3, GamIn1-mP component-gradient buffer layers,
AlzGa1-zAs batteries, the 4th tunnel knot 4 and (AlxGa1-x)yIn1-yThe sub- batteries of P, then InP substrate is overturn into 180 °, finally exist
InP substrate lower surface growing P-type InP cell back fields layer 5 successively, the second tunnel knot 2, the sub- batteries of GaInAsP, the first tunnel knot
1 and GaInAs battery, you can complete the preparation of five connection solar cells of InP of two-sided growth.
In sum, InP substrate of the present invention using twin polishing, InP substrate upper surface is provided with band gap is
(the Al of 2.06eVxGa1-x)yIn1-yThe Al of P, 1.7eVzGa1-zAs batteries, arrange band gap for 1.05eV's in lower surface
The sub- batteries of GaInAs of the sub- batteries of GaInAsP and 0.75eV, and by InP battery Window layer, InP battery emitter layers, InP
Substrate and InP cell back fields layer constitute InP battery of the band gap for 1.37eV, finally give bandgap structure for 2.06/1.7/
1.37/1.05/0.75eV (AlxGa1-x)yIn1-yP/AlzGa1-zFive connection solar cells of As/InP/GaInAsP/GaInAs, this
The bandgap structure of sample can be realized matching with solar spectrum, improve the photoelectric transformation efficiency of battery.
Above embodiments of the invention are described in detail, but the content have been only presently preferred embodiments of the present invention,
It is not to be regarded as the practical range for limiting the present invention.All changes made according to the present patent application scope and improvement etc., all should
Still belong within the patent covering scope of the present invention.
Claims (6)
1. five connection solar cells of InP of a kind of two-sided growth, including the InP substrate of twin polishing；The InP substrate includes a upper table
Face and a lower surface；It is characterized in that：
The InP substrate is used as InP battery base layers；
InP battery emitter layers are configured with the upper surface of the InP batteries base layer；Launch in the InP batteries
The upper surface of region layer is configured with InP battery Window layer；Ga is configured with the upper surface of the InP batteries Window layermIn1-mP
Component-gradient buffer layer；In the GamIn1-mThe upper surface of P component-gradient buffer layers is configured with AlzGa1-zAs batteries；Institute
State AlzGa1-zThe upper surface of As batteries is configured with (AlxGa1-x)yIn1-yThe sub- batteries of P；Wherein：The InP batteries Window layer
Upper surface and GamIn1-mConnected by the 3rd tunnel knot between P component-gradient buffer layers；The AlzGa1-zAs batteries it is upper
Surface and (AlxGa1-x)yIn1-yConnected by the 4th tunnel knot between the sub- batteries of P；
InP cell back field layers are configured with the lower surface of the InP batteries base layer；In the InP cell back fields
The lower surface of layer is configured with the sub- batteries of GaInAsP；The sub- batteries of GaInAs are configured with the lower surface of the sub- batteries of the GaInAsP；
Connected by the second tunnel knot between the lower surface and the sub- batteries of GaInAsP of the InP cell back fields layer；The GaInAsP
Connected by the first tunnel knot between the sub- battery of lower surface and GaInAs of sub- battery；
The AlzGa1-zAs batteries and (AlxGa1-x)yIn1-yThe sub- battery Lattice Matchings of P；The InP batteries Window layer, InP
Sub- battery emitter layer, InP cell back field layers, the sub- batteries of GaInAsP and the sub- battery Lattice Matchings of GaInAs；
The GamIn1-mThe m values of P component-gradient buffer layers from top to bottom in 0.52～0 interval gradual change, corresponding lattice paprmeter from
With AlzGa1-zAs matching fade to match with InP, beInterval gradual change.
2. five connection solar cells of InP of two-sided growth according to claim 1, it is characterised in that：(the AlxGa1-x)yIn1-yThe sub- batteries of P include the (Al for configuring successively from top to bottomnGa1-n)yIn1-yP Window layer, (AlxGa1-x)yIn1-yP launch sites,
(AlxGa1-x)yIn1-yP bases, (AlnGa1-n)yIn1-yP back surface field layers；(the AlnGa1-n)yIn1-yP back surface field layers pass through the 4th tunnel
Knot and AlzGa1-zAs batteries connect；Wherein：(the AlxGa1-x)yIn1-yThe y values of P materials are that 0.5, x values are interval 0～0.5
It is interior, correspondence (AlxGa1-x)yIn1-yP material band gaps are in 1.85eV～2.23eV is interval；(the AlnGa1-n)yIn1-yP materials
Y values are that 0.5, n values are interval interior 0～1, correspondence (AlnGa1-n)yIn1-yP material band gaps are in 1.85eV～2.3eV is interval.
3. five connection solar cells of InP of two-sided growth according to claim 1, it is characterised in that：The AlzGa1-zAs
Battery includes GaInP Window layer, Al from top to bottom successively according to laminated constructionzGa1-zAs launch sites, AlzGa1-zAs bases,
GaInP back surface field layers；Wherein：In z values are interval 0～0.35, corresponding A lzGa1-zAs material band gaps are interval in 1.42eV～1.85eV
It is interior.
4. five connection solar cells of InP of two-sided growth according to claim 1, it is characterised in that：The InP battery windows
Mouth layer, InP battery emitter layers, InP substrate, InP cell back field layers collectively form InP batteries.
5. five connection solar cells of InP of two-sided growth according to claim 1, it is characterised in that：The GaInAsP electricity
Pond includes InP Window layer, GaInAsP launch sites, GaInAsP bases, InP back surface fields from top to bottom successively according to laminated construction
Layer；The InP Window layer is connected with InP cell back field layers by the second tunnel knot.
6. five connection solar cells of InP of two-sided growth according to claim 5, it is characterised in that：The GaInAs electricity
Pond includes GaInAs Window layer, GaInAs launch sites, GaInAs bases, the GaInAs back ofs the body from top to bottom successively according to laminated construction
Field layer；The GaInAs Window layer is connected with InP back surface field layers by the first tunnel knot.
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| CN109326674B (en) * | 2018-11-27 | 2024-01-12 | 中山德华芯片技术有限公司 | Five-junction solar cell containing multiple double heterojunction sub-cells and preparation method thereof |
| CN109742166A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第十八研究所 | Five-junction solar cell and preparation method thereof |
| CN112909099B (en) * | 2021-01-15 | 2022-04-12 | 中山德华芯片技术有限公司 | Solar cell with double-sided stress compensation |
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| CN103346191A (en) * | 2013-06-06 | 2013-10-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAsP/InGaAs four-knot cascade solar cell and preparation method thereof |
| CN104282795A (en) * | 2013-07-03 | 2015-01-14 | 中国电子科技集团公司第十八研究所 | Method for manufacturing GaInP/GaAs/InGaAs/Ge solar cell |
| CN104465843A (en) * | 2014-11-28 | 2015-03-25 | 瑞德兴阳新能源技术有限公司 | Double-sided growth GaAs four-junction solar cell |
| CN204315590U (en) * | 2014-11-28 | 2015-05-06 | 瑞德兴阳新能源技术有限公司 | Silicon-based four-junction solar cell with double-sided growth |
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