CN105355670B - Five-junction solar energy cells including DBR structure - Google Patents
Five-junction solar energy cells including DBR structure Download PDFInfo
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- CN105355670B CN105355670B CN201510812277.9A CN201510812277A CN105355670B CN 105355670 B CN105355670 B CN 105355670B CN 201510812277 A CN201510812277 A CN 201510812277A CN 105355670 B CN105355670 B CN 105355670B
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 44
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a five-junction solar energy cell including a DBR structure. According to the cell, a Ge single crystal slice is taken as a substrate, the Ge substrate is sequentially provided with a GaInAs/GaInP buffer layer, an AlGaAs/GaInAs DBR, a Ga1-3xIn3xNxAs1-x sub cell, an AlAs/AlGaAs DBR, a Ga1-3yIn3yNyAs1-y sub cell, an AlGaInAs sub cell and an AlGaInP sub cell, wherein the AlGaAs/GaInAs DBR is used for reflecting long-wave photons, and the AlAs/AlGaAs DBR is used for reflecting middle/long-wave photons. Through the cell, the photons can be absorbed and utilized secondarily by the sub cells, sub cell collection efficiency is improved, so photoelectric conversion efficiency of the five-junction solar energy cell is improved, moreover, thickness of the sub cells can be reduced, cell production efficiency is improved, and cell production cost is reduced.
Description
Technical field
The present invention relates to the technical field of photovoltaic, refer in particular to it is a kind of containing DBR (Distributed Bragg Reflection layer,
Distributed Brag Reflector) structure five-junction solar cell.
Background technology
Solaode can substantially be divided into three major types from the point of view of technology development：First generation crystal silicon solar batteries, second
For thin-film solar cells and third generation GaAs optically focused (tying more) solaode.At present, gallium arsenide compound solar-electricity
Pond is widely used in concentrating photovoltaic power generation (CPV) system and space power system because of its conversion efficiency apparently higher than crystal silicon battery
System.The GaInP/GaInAs/Ge that the main flow structure of GaAs multijunction cell is made up of GaInP, GaInAs and Ge batteries
Three-joint solar cell, integrally keeps Lattice Matching, band gap to be combined as 1.85/1.40/0.67eV on battery structure.However, right
In sunlight spectrum, the band gap combination of this three junction battery be not it is optimal, due to the sub- batteries of GaInAs and Ge batteries it
Between larger difference in band gap away from the solar spectrum energy that Ge bottoms battery absorbs under this structure is more than what middle battery and top battery absorbed
Go out a lot, the maximum accessible middle battery of short circuit current and twice (V.Sabnis, H.Yuen, the and of top battery of Ge batteries
M.Wiemer, AIP Conf.Proc.1477 (2012) 14), due to the current limit reason of cascaded structure, this structure is caused
A big chunk solar energy can not be limited the raising of battery performance by abundant conversion.
Theory analysis shows that the knot of semiconducting compound four and five-junction solar cell can optimize band gap combination, improve electricity
The photoelectric transformation efficiency in pond, but Lattice Matching must be kept on material is selected, so just can guarantee that the crystal of epitaxial material
Quality.In the last few years, during researcher finds GaInNAs quaternary alloy materials, by adjusting the component of In and N, and In groups are kept
Point about 3 times of N components, just can so that the optical band gap of GaInNAs reaches 0.9～1.4eV, and with Ge substrates (or GaAs
Substrate) Lattice Matching.Therefore, can be grown based on Ge substrates and obtain AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/
Ga1-3xIn3xNxAs1-x/Ge five-junction solar cells, the band gap combined adjustable of five junction battery be 2.0～2.1/1.6～
1.7/1.25～1.35/0.95～1.05/0.67eV, is close to the optimal band gap combination of five junction batteries, its ground spectrum optically focused effect
The rate limit up to 50%, spatial spectral limiting efficiency up to 36%, significantly larger than traditional three junction battery, this is primarily due to compare
In three junction batteries, five junction batteries can more fully utilize sunlight, improve the open-circuit voltage and fill factor, curve factor of battery.
However, in the actual fabrication process of GaInNAs materials, as GaInNAs needs low-temperature epitaxy just to can guarantee that N is former
Effectively being incorporated to for son, can introduce substantial amounts of C atoms simultaneously, cause concentration of background carriers too high in material, affect few son diffusion
Length.Now, if GaInNAs material layers are too thick, the effective collection to photo-generated carrier can not be formed；If GaInNAs materials
Layer is too thin, can not fully absorb the photon of corresponding wave band.Therefore, Bragg reflecting layer is inserted below GaInNAs material layers
(DBR) structure can reduce GaInNAs battery design thickness with the effectively solving problem.In structure design, can be by adjusting
Dbr structure reflects the sunlight of corresponding wave band, makes not reflected back by secondary suction by the absorption photon of GaInNAs materials for the first time
Receive, equivalent to " the effective absorber thickness " that in a disguised form increased GaInNAs, perfection solve minority diffusion length it is less and absorb
Contradiction between thickness requirement.Further, since N sources (the usually dimethylhydrazine source) price for providing N atoms is more organic than general
Source will be higher by a lot, and reducing GaInNAs layer thickness can also reduce the production cost of battery.
To sum up, the AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/ containing dbr structure
Ge five-junction solar cells can both meet the theoretical design requirements of five junction batteries, can be solved in actual fabrication process again
The less problem of GaInNAs material minority diffusion lengths, can also save the production cost of battery, can farthest play five
The advantage of junction battery, improves battery efficiency.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art and shortcoming, a kind of containing dbr structure five knots sun is proposed
Energy battery, can improve the sub- battery collection efficiencies of GaInNAs, increase by five junction batteries entirety short circuit current, and can reduce
The sub- cell thickness of GaInNAs, saves production cost, and the final advantage for playing five junction batteries improves battery entirety opto-electronic conversion effect
Rate.
For achieving the above object, technical scheme provided by the present invention is：A kind of electricity of the five-junction solar containing dbr structure
Pond, includes Ge substrates, and the Ge substrates are p-type Ge single-chip；Above the Ge substrates according to stratiform overlaying structure by under
It is supreme to be disposed with GaInAs/GaInP cushions, AlGaAs/GaInAs DBR, Ga1-3xIn3xNxAs1-xSub- battery, AlAs/
AlGaAs DBR、Ga1-3yIn3yNyAs1-yThe sub- battery of sub- battery, AlGaInAs and the sub- batteries of AlGaInP；The GaInAs/
Connected by the first tunnel knot between GaInP cushions and AlGaAs/GaInAs DBR, the Ga1-3xIn3xNxAs1-xSub- battery
Connected by the second tunnel knot with AlAs/AlGaAs DBR, the Ga1-3yIn3yNyAs1-ySub- battery and the sub- batteries of AlGaInAs
Connected by the 3rd tunnel knot, the sub- battery of the AlGaInAs and the sub- batteries of AlGaInP are by the connection of the 4th tunnel knot；Wherein,
The AlGaAs/GaInAs DBR are used for reflecting longer-wave photons, and the AlAs/AlGaAs DBR are used for longer-wave photons in reflection.
The reflection wavelength of the AlGaAs/GaInAs DBR is 1000～1300nm, in the AlGaAs/GaInAs DBR
The logarithm of AlGaAs/GaInAs combination layers is 10～30 pairs.
The Ga1-3xIn3xNxAs1-xGa in sub- battery1-3xIn3xNxAs1-xThe optical band gap of material is 0.95～1.05eV.
The reflection wavelength of the AlAs/AlGaAs DBR is 800～1000nm, AlAs/ in the AlAs/AlGaAs DBR
The logarithm of AlGaAs combination layers is 10～30 pairs.
The Ga1-3yIn3yNyAs1-yGa in sub- battery1-3yIn3yNyAs1-yThe optical band gap of material is 1.25～1.35eV.
In the sub- battery of the AlGaInAs, the optical band gap of AlGaInAs materials is 1.6～1.7eV.
In the sub- battery of the AlGaInP, the optical band gap of AlGaInP materials is 2.0～2.1eV.
The present invention compared with prior art, has the advantage that and beneficial effect：
It is critical only that for the present invention is incorporated into DBR reflection layer structures in five-junction solar cell, in Ga1- 3xIn3xNxAs1-xSub- battery and Ga1-3yIn3yNyAs1-yInsert AlGaAs/GaInAs DBR and AlAs/ below sub- battery respectively
AlGaAs DBR, by adjusting dbr structure parameter, make not reflected back by two by the absorption photon of GaInNAs materials for the first time
Secondary absorption, equivalent to " the effective absorber thickness " that in a disguised form increased GaInNAs, perfection solve minority diffusion length it is less and
Contradiction between absorber thickness requirement.The battery structure can both meet the theoretical design requirements of five junction batteries, and can solve real
In the preparation process of border, the less problem of GaInNAs materials minority diffusion length, can also save the production cost of battery, can be maximum
Degree ground plays the advantage of five junction batteries, improves battery efficiency.
Description of the drawings
Fig. 1 is the five-junction solar cell structural representation containing dbr structure of the present invention.
Specific embodiment
With reference to specific embodiment, the invention will be further described.
As shown in figure 1, the five-junction solar cell containing dbr structure described in the present embodiment, includes Ge substrates, the Ge
Substrate is p-type Ge single-chip；GaInAs/ is disposed with from the bottom to top according to stratiform overlaying structure on the Ge substrates
GaInP cushions, AlGaAs/GaInAs DBR, Ga1-3xIn3xNxAs1-xSub- battery, AlAs/AlGaAs DBR, Ga1- 3yIn3yNyAs1-yThe sub- battery of sub- battery, AlGaInAs and the sub- batteries of AlGaInP；The GaInAs/GaInP cushions and
Connected by the first tunnel knot between AlGaAs/GaInAs DBR, the Ga1-3xIn3xNxAs1-xSub- battery and AlAs/AlGaAs
DBR is connected by the second tunnel knot, the Ga1-3yIn3yNyAs1-ySub- battery and the sub- batteries of AlGaInAs pass through the 3rd tunnel knot
Connection, the sub- battery of the AlGaInAs and the sub- batteries of AlGaInP are by the connection of the 4th tunnel knot.
The AlGaAs/GaInAs DBR are used for reflecting longer-wave photons, and its reflection wavelength is 1000～1300nm, should
In AlGaAs/GaInAs DBR, the logarithm of AlGaAs/GaInAs combination layers is 10～30 pairs.
The Ga1-3xIn3xNxAs1-xGa in sub- battery1-3xIn3xNxAs1-xThe optical band gap of material is 0.95～1.05eV.
The AlAs/AlGaAs DBR are used for longer-wave photons in reflection, and its reflection wavelength is 800～1000nm, the AlAs/
In AlGaAs DBR, the logarithm of AlAs/AlGaAs combination layers is 10～30 pairs.
The Ga1-3yIn3yNyAs1-yGa in sub- battery1-3yIn3yNyAs1-yThe optical band gap of material is 1.25～1.35eV.
In the sub- battery of the AlGaInAs, the optical band gap of AlGaInAs materials is 1.6～1.7eV.
In the sub- battery of the AlGaInP, the optical band gap of AlGaInP materials is 2.0～2.1eV.
It is the concrete preparation process of the above-mentioned five-junction solar cell containing dbr structure of the present embodiment below, its situation is as follows：
First, with 4 inches of p-type Ge single-chips as substrate, then using metal organic chemical vapor deposition technology (MOCVD)
Or molecular beam epitaxial growth technology (MBE) grows GaInAs/GaInP cushions, the first tunnel successively in the upper surface of Ge substrates
Knot, AlGaAs/GaInAs DBR, Ga1-3xIn3xNxAs1-xSub- battery, the second tunnel knot, AlAs/AlGaAs DBR, Ga1- 3yIn3yNyAs1-ySub- battery, the 3rd tunnel knot, the sub- batteries of AlGaInAs, the 4th tunnel knot and the sub- batteries of AlGaInP, you can complete
The preparation of the five-junction solar cell containing dbr structure.
In sum, the present invention utilizes DBR reflection layer structures, and combines GaInNAs material own characteristics, ties the sun five
The Ga of energy battery1-3xIn3xNxAs1-xSub- battery and Ga1-3yIn3yNyAs1-yInsert AlGaAs/GaInAs below sub- battery respectively
DBR and AlAs/AlGaAs DBR, by adjusting dbr structure parameter, make first not anti-by the absorption photon of GaInNAs materials
It is emitted back towards by double absorption, equivalent to " the effective absorber thickness " that in a disguised form increased GaInNAs, this not only can meet five knots
The theoretical design requirements of battery, can solve the less problem of GaInNAs material minority diffusion lengths in actual fabrication process again, also
The production cost of battery can be saved, the advantage of five junction batteries can be farthest played, be significantly improved battery efficiency.In a word,
The present invention can more fully utilize solar energy, improve the photoelectric transformation efficiency of GaAs multijunction cells, be worthy to be popularized.
The examples of implementation of the above are only the preferred embodiments of the invention, not limit the enforcement model of the present invention with this
Enclose, therefore the change made by all shapes according to the present invention, principle, all should cover within the scope of the present invention.
Claims (5)
1. a kind of five-junction solar cell containing dbr structure, includes Ge substrates, it is characterised in that：The Ge substrates are p-type Ge
Single-chip；Above the Ge substrates according to stratiform overlaying structure be disposed with from the bottom to top GaInAs/GaInP cushions,
AlGaAs/GaInAs DBR、Ga1-3xIn3xNxAs1-xSub- battery, AlAs/AlGaAs DBR, Ga1-3yIn3yNyAs1-ySub- battery,
The sub- batteries of AlGaInAs and the sub- batteries of AlGaInP；Lead between the GaInAs/GaInP cushions and AlGaAs/GaInAs DBR
Cross the connection of the first tunnel knot, the Ga1-3xIn3xNxAs1-xSub- battery and AlAs/AlGaAs DBR are connected by the second tunnel knot,
The Ga1-3yIn3yNyAs1-ySub- battery and the sub- batteries of AlGaInAs are connected by the 3rd tunnel knot, the sub- battery of the AlGaInAs
Connected by the 4th tunnel knot with the sub- batteries of AlGaInP；Wherein, the AlGaAs/GaInAs DBR are used for reflecting longer-wave photons,
The AlAs/AlGaAs DBR are used for longer-wave photons in reflection；The Ga1-3xIn3xNxAs1-xGa in sub- battery1-3xIn3xNxAs1-x
The optical band gap of material is 0.95～1.05eV；The Ga1-3yIn3yNyAs1-yGa in sub- battery1-3yIn3yNyAs1-yThe light of material
Band gap is 1.25～1.35eV.
2. a kind of five-junction solar cell containing dbr structure according to claim 1, it is characterised in that：The AlGaAs/
The reflection wavelength of GaInAs DBR be 1000～1300nm, AlGaAs/GaInAs combination layers in the AlGaAs/GaInAs DBR
Logarithm is 10～30 pairs.
3. a kind of five-junction solar cell containing dbr structure according to claim 1, it is characterised in that：The AlAs/
The reflection wavelength of AlGaAs DBR be 800～1000nm, the logarithm of AlAs/AlGaAs combination layers in the AlAs/AlGaAs DBR
For 10～30 pairs.
4. a kind of five-junction solar cell containing dbr structure according to claim 1, it is characterised in that：It is described
In the sub- batteries of AlGaInAs, the optical band gap of AlGaInAs materials is 1.6～1.7eV.
5. a kind of five-junction solar cell containing dbr structure according to claim 1, it is characterised in that：The AlGaInP
In sub- battery, the optical band gap of AlGaInP materials is 2.0～2.1eV.
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| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | Double-side growth four-junction solar cell with reflecting layer and preparation method thereof |
| JP6740780B2 (en) * | 2016-07-28 | 2020-08-19 | 三菱電機株式会社 | Optical semiconductor device |
| CN106206849B (en) * | 2016-08-24 | 2017-11-21 | 中山德华芯片技术有限公司 | Temperature monitoring method when prepared by six joint solar cells containing dbr structure |
| CN106449848B (en) * | 2016-10-28 | 2017-09-29 | 上海空间电源研究所 | A kind of multijunction solar cell containing compound multi-photon chamber |
| CN107221574B (en) * | 2017-07-19 | 2023-04-18 | 中山德华芯片技术有限公司 | Composite DBR structure applied to multi-junction solar cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203721752U (en) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | Three-junction solar cell with distributed Bragg reflector |
| US9018521B1 (en) * | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
| CN205385027U (en) * | 2015-11-19 | 2016-07-13 | 中山德华芯片技术有限公司 | Five knot solar cell that contain DBR structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9018521B1 (en) * | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
| CN203721752U (en) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | Three-junction solar cell with distributed Bragg reflector |
| CN205385027U (en) * | 2015-11-19 | 2016-07-13 | 中山德华芯片技术有限公司 | Five knot solar cell that contain DBR structure |
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