CN105355670A - A five-junction solar cell with DBR structure - Google Patents
A five-junction solar cell with DBR structure Download PDFInfo
- Publication number
- CN105355670A CN105355670A CN201510812277.9A CN201510812277A CN105355670A CN 105355670 A CN105355670 A CN 105355670A CN 201510812277 A CN201510812277 A CN 201510812277A CN 105355670 A CN105355670 A CN 105355670A
- Authority
- CN
- China
- Prior art keywords
- algaas
- sub
- battery
- junction
- alas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 27
- 230000003287 optical effect Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及太阳能光伏的技术领域，尤其是指一种含DBR(分布式布拉格反射层，DistributedBragReflector)结构的五结太阳能电池。The invention relates to the technical field of solar photovoltaics, in particular to a five-junction solar cell with a DBR (Distributed Bragg Reflector, Distributed Bragg Reflector) structure.
背景技术Background technique
太阳能电池从技术发展来看，大体可以分为三大类：第一代晶硅太阳能电池、第二代薄膜太阳能电池和第三代砷化镓聚光(多结)太阳能电池。目前，砷化镓化合物太阳能电池因其转换效率明显高于晶硅电池而被广泛地应用于聚光光伏发电(CPV)系统和空间电源系统。砷化镓多结电池的主流结构是由GaInP、GaInAs和Ge子电池组成的GaInP/GaInAs/Ge三结太阳能电池，电池结构上整体保持晶格匹配，带隙组合为1.85/1.40/0.67eV。然而，对于太阳光光谱，这种三结电池的带隙组合并不是最佳的，由于GaInAs子电池和Ge子电池之间较大的带隙差距，这种结构下Ge底电池吸收的太阳光谱能量比中电池和顶电池吸收的多出很多，Ge电池的短路电流最大可接近中电池和顶电池的两倍(V.Sabnis,H.Yuen,andM.Wiemer,AIPConf.Proc.1477(2012)14)，由于串联结构的电流限制原因，这种结构造成了很大一部分太阳光能量不能被充分转换利用，限制了电池性能的提高。From the perspective of technological development, solar cells can be roughly divided into three categories: the first generation of crystalline silicon solar cells, the second generation of thin-film solar cells and the third generation of gallium arsenide concentrating (multi-junction) solar cells. At present, gallium arsenide compound solar cells are widely used in concentrated photovoltaic (CPV) systems and space power systems because their conversion efficiency is significantly higher than that of crystalline silicon cells. The mainstream structure of gallium arsenide multi-junction solar cells is a GaInP/GaInAs/Ge triple-junction solar cell composed of GaInP, GaInAs and Ge sub-cells. The cell structure maintains lattice matching as a whole, and the band gap combination is 1.85/1.40/0.67eV. However, for the solar spectrum, the bandgap combination of this triple-junction cell is not optimal, due to the large bandgap gap between the GaInAs subcell and the Ge subcell, the solar spectrum absorbed by the Ge bottom cell under this structure The energy absorbed by the middle battery and the top battery is much more, and the short-circuit current of the Ge battery can be close to twice that of the middle battery and the top battery (V.Sabnis, H.Yuen, and M.Wiemer, AIPConf.Proc.1477(2012) 14), due to the current limitation of the series structure, this structure causes a large part of the solar energy to not be fully converted and utilized, which limits the improvement of battery performance.
理论分析表明，半导体化合物四结和五结太阳能电池可以优化带隙组合，提高电池的光电转换效率，但是在材料选择上必须保持晶格匹配，这样才能保证外延材料的晶体质量。近些年来，研究者发现GaInNAs四元合金材料中，通过调节In和N的组分，并保持In组分约为N组分的3倍，就能使得GaInNAs的光学带隙达到0.9～1.4eV，并且与Ge衬底(或GaAs衬底)晶格匹配。因此，基于Ge衬底可以生长得到AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge五结太阳能电池，该五结电池的带隙组合可调节为2.0～2.1/1.6～1.7/1.25～1.35/0.95～1.05/0.67eV，接近五结电池的最佳带隙组合，其地面光谱聚光效率极限可达50％，空间光谱极限效率可达36％，远远高于传统三结电池，这主要是因为相比于三结电池，五结电池可以更加充分地利用太阳光，提高电池的开路电压和填充因子。Theoretical analysis shows that semiconductor compound four-junction and five-junction solar cells can optimize the band gap combination and improve the photoelectric conversion efficiency of the cell, but the lattice matching must be maintained in the material selection, so as to ensure the crystal quality of the epitaxial material. In recent years, researchers have found that in GaInNAs quaternary alloy materials, by adjusting the composition of In and N, and keeping the In composition about 3 times that of the N composition, the optical band gap of GaInNAs can reach 0.9-1.4eV , and lattice-matched with the Ge substrate (or GaAs substrate). Therefore, AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge five-junction solar cells can be grown based on Ge substrates, and the band gap combination of the five-junction cells can be adjusted to 2.0～2.1/1.6～1.7/ 1.25～1.35/0.95～1.05/0.67eV, which is close to the optimal bandgap combination of five-junction cells. Its ground spectral light-gathering efficiency limit can reach 50%, and its spatial spectral limit efficiency can reach 36%, which is much higher than that of traditional three-junction cells. battery, this is mainly because compared with the three-junction battery, the five-junction battery can make full use of sunlight and improve the open circuit voltage and fill factor of the battery.
然而，在GaInNAs材料的实际制备过程中，由于GaInNAs需要低温生长才能保证N原子的有效并入，材料中会同时引入大量的C原子，造成背景载流子浓度过高，影响少子扩散长度。此时，若GaInNAs材料层太厚，并不能形成对光生载流子的有效收集；若GaInNAs材料层太薄则不能将相应波段的光子完全吸收。因此，在GaInNAs材料层下面插入布拉格反射层(DBR)结构可以有效解决该问题，降低GaInNAs电池设计厚度。在结构设计中，可以通过调节DBR结构反射相应波段的太阳光，使初次没有被GaInNAs材料的吸收光子反射回去被二次吸收，相当于变相地增加了GaInNAs的“有效吸收厚度”，完美解决了少子扩散长度较小和吸收厚度要求之间的矛盾。另外，由于提供N原子的N源(一般是二甲基肼源)价格比一般的有机源都要高出很多，减小GaInNAs材料层厚度还可以降低电池的生产成本。However, in the actual preparation process of GaInNAs materials, since GaInNAs needs to be grown at low temperature to ensure the effective incorporation of N atoms, a large number of C atoms will be introduced into the material at the same time, causing the background carrier concentration to be too high and affecting the minority carrier diffusion length. At this time, if the GaInNAs material layer is too thick, it cannot form an effective collection of photogenerated carriers; if the GaInNAs material layer is too thin, it cannot completely absorb the photons of the corresponding wavelength band. Therefore, inserting a Bragg reflector (DBR) structure under the GaInNAs material layer can effectively solve this problem and reduce the design thickness of the GaInNAs battery. In structural design, it is possible to adjust the DBR structure to reflect sunlight in the corresponding band, so that the photons that are not absorbed by the GaInNAs material for the first time are reflected back to be absorbed for the second time, which is equivalent to increasing the "effective absorption thickness" of GaInNAs in a disguised form, which perfectly solves the problem. The contradiction between the small minority carrier diffusion length and the absorption thickness requirement. In addition, since the price of the N source (usually dimethylhydrazine source) that provides N atoms is much higher than that of general organic sources, reducing the thickness of the GaInNAs material layer can also reduce the production cost of the battery.
综上，含DBR结构的AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge五结太阳能电池既可以满足五结电池的理论设计要求，又能解决实际制备过程中GaInNAs材料少子扩散长度较小的问题，还可以节约电池的生产成本，可最大程度地发挥五结电池的优势，提高电池效率。In summary, AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge five-junction solar cells with DBR structure can not only meet the theoretical design requirements of five-junction cells, but also solve the problem of minority carrier diffusion of GaInNAs materials in the actual preparation process. The problem of small length can also save the production cost of the battery, and can maximize the advantages of the five-junction battery and improve battery efficiency.
发明内容Contents of the invention
本发明的目的在于克服现有技术的不足与缺点，提出一种含DBR结构的五结太阳能电池，可以提高GaInNAs子电池收集效率，增加五结电池整体短路电流，而且可以减少GaInNAs子电池厚度，节约生产成本，最终发挥五结电池的优势，提高电池整体光电转换效率。The purpose of the present invention is to overcome the deficiencies and shortcomings of the prior art, and propose a five-junction solar cell containing a DBR structure, which can improve the collection efficiency of the GaInNAs sub-cell, increase the overall short-circuit current of the five-junction cell, and reduce the thickness of the GaInNAs sub-cell. Save production costs, and finally give full play to the advantages of the five-junction battery to improve the overall photoelectric conversion efficiency of the battery.
为实现上述目的，本发明所提供的技术方案为：一种含DBR结构的五结太阳能电池，包括有Ge衬底，所述Ge衬底为p型Ge单晶片；在所述Ge衬底上面按照层状叠加结构由下至上依次设置有GaInAs/GaInP缓冲层、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、AlGaInAs子电池和AlGaInP子电池；所述GaInAs/GaInP缓冲层和AlGaAs/GaInAsDBR之间通过第一隧道结连接，所述Ga1-3xIn3xNxAs1-x子电池和AlAs/AlGaAsDBR通过第二隧道结连接，所述Ga1-3yIn3yNyAs1-y子电池和AlGaInAs子电池通过第三隧道结连接，所述AlGaInAs子电池和AlGaInP子电池通过第四隧道结连接；其中，所述AlGaAs/GaInAsDBR用于反射长波光子，所述AlAs/AlGaAsDBR用于反射中长波光子。In order to achieve the above object, the technical solution provided by the present invention is: a five-junction solar cell containing a DBR structure, including a Ge substrate, and the Ge substrate is a p-type Ge single wafer; GaInAs/GaInP buffer layer, AlGaAs/GaInAsDBR, Ga 1-3x In 3x N x As 1-x sub-cells, AlAs/AlGaAsDBR, Ga 1-3y In 3y N y As 1 are arranged sequentially from bottom to top according to the layered superposition structure -y subcells, AlGaInAs subcells and AlGaInP subcells; the GaInAs/GaInP buffer layer and the AlGaAs/GaInAsDBR are connected through a first tunnel junction, and the Ga 1-3x In 3x NxAs 1-x subcells and AlAs/AlGaAsDBR is connected through the second tunnel junction, the Ga 1-3y In 3y N y As 1-y subcell and the AlGaInAs subcell are connected through the third tunnel junction, and the AlGaInAs subcell and the AlGaInP subcell are connected through the fourth tunnel Junction connection; wherein, the AlGaAs/GaInAsDBR is used to reflect long-wavelength photons, and the AlAs/AlGaAsDBR is used to reflect medium-long-wavelength photons.
所述AlGaAs/GaInAsDBR的反射波长为1000～1300nm，该AlGaAs/GaInAsDBR中AlGaAs/GaInAs组合层的对数为10～30对。The reflection wavelength of the AlGaAs/GaInAs DBR is 1000-1300 nm, and the number of pairs of AlGaAs/GaInAs combined layers in the AlGaAs/GaInAs DBR is 10-30 pairs.
所述Ga1-3xIn3xNxAs1-x子电池中Ga1-3xIn3xNxAs1-x材料的光学带隙为0.95～1.05eV。The optical band gap of the Ga 1-3x In 3x N x As 1-x material in the Ga 1-3x In 3x N x As 1-x sub-cell is 0.95-1.05eV.
所述AlAs/AlGaAsDBR的反射波长为800～1000nm，该AlAs/AlGaAsDBR中AlAs/AlGaAs组合层的对数为10～30对。The reflection wavelength of the AlAs/AlGaAs DBR is 800-1000 nm, and the number of pairs of AlAs/AlGaAs combination layers in the AlAs/AlGaAs DBR is 10-30 pairs.
所述Ga1-3yIn3yNyAs1-y子电池中Ga1-3yIn3yNyAs1-y材料的光学带隙为1.25～1.35eV。The optical band gap of the Ga 1-3y In 3y N y As 1-y material in the Ga 1-3y In 3y N y As 1-y sub-cell is 1.25-1.35 eV.
所述AlGaInAs子电池中AlGaInAs材料的光学带隙为1.6～1.7eV。The optical band gap of the AlGaInAs material in the AlGaInAs sub-cell is 1.6-1.7 eV.
所述AlGaInP子电池中AlGaInP材料的光学带隙为2.0～2.1eV。The optical band gap of the AlGaInP material in the AlGaInP sub-cell is 2.0-2.1 eV.
本发明与现有技术相比，具有如下优点与有益效果：Compared with the prior art, the present invention has the following advantages and beneficial effects:
本发明的关键在于将DBR反射层结构引入到五结太阳能电池中，在Ga1-3xIn3xNxAs1-x子电池和Ga1-3yIn3yNyAs1-y子电池下方分别插入AlGaAs/GaInAsDBR和AlAs/AlGaAsDBR，通过调节DBR结构参数，使初次没有被GaInNAs材料的吸收光子反射回去被二次吸收，相当于变相地增加了GaInNAs的“有效吸收厚度”，完美解决了少子扩散长度较小和吸收厚度要求之间的矛盾。该电池结构既可以满足五结电池的理论设计要求，又能解决实际制备过程中GaInNAs材料少子扩散长度较小的问题，还可以节约电池的生产成本，可最大程度地发挥五结电池的优势，提高电池效率。The key of the present invention is to introduce the DBR reflective layer structure into the five-junction solar cell, under the Ga 1-3x In 3x N x As 1-x sub-cell and the Ga 1-3y In 3y N y As 1-y sub-cell, respectively Inserting AlGaAs/GaInAsDBR and AlAs/AlGaAsDBR, by adjusting the DBR structure parameters, the photons that are not absorbed by the GaInNAs material for the first time are reflected back and absorbed again, which is equivalent to increasing the "effective absorption thickness" of GaInNAs in a disguised form, which perfectly solves the minority carrier diffusion The contradiction between the smaller length and the absorption thickness requirement. The battery structure can not only meet the theoretical design requirements of the five-junction battery, but also solve the problem of the small minority carrier diffusion length of the GaInNAs material in the actual preparation process, save the production cost of the battery, and maximize the advantages of the five-junction battery. Improve battery efficiency.
附图说明Description of drawings
图1为本发明所述含DBR结构的五结太阳能电池结构示意图。FIG. 1 is a schematic diagram of the structure of a five-junction solar cell containing a DBR structure according to the present invention.
具体实施方式detailed description
下面结合具体实施例对本发明作进一步说明。The present invention will be further described below in conjunction with specific examples.
如图1所示，本实施例所述的含DBR结构的五结太阳能电池，包括有Ge衬底，所述Ge衬底为p型Ge单晶片；在所述Ge衬底上面按照层状叠加结构由下至上依次设置有GaInAs/GaInP缓冲层、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、AlGaInAs子电池和AlGaInP子电池；所述GaInAs/GaInP缓冲层和AlGaAs/GaInAsDBR之间通过第一隧道结连接，所述Ga1-3xIn3xNxAs1-x子电池和AlAs/AlGaAsDBR通过第二隧道结连接，所述Ga1-3yIn3yNyAs1-y子电池和AlGaInAs子电池通过第三隧道结连接，所述AlGaInAs子电池和AlGaInP子电池通过第四隧道结连接。As shown in Figure 1, the five-junction solar cell containing the DBR structure described in this embodiment includes a Ge substrate, and the Ge substrate is a p-type Ge single wafer; The structure is provided with GaInAs/GaInP buffer layer, AlGaAs/GaInAsDBR, Ga 1-3x In 3x N x As 1-x subcell, AlAs/AlGaAsDBR, Ga 1-3y In 3y N y As 1-y subcell in sequence from bottom to top , AlGaInAs sub-cell and AlGaInP sub-cell; the GaInAs/GaInP buffer layer and AlGaAs/GaInAsDBR are connected through a first tunnel junction, and the Ga 1-3x In 3x N x As 1-x sub-cell and AlAs/AlGaAsDBR are connected through The second tunnel junction is connected, the Ga 1-3y In 3y N y As 1-y subcell is connected to the AlGaInAs subcell through a third tunnel junction, and the AlGaInAs subcell is connected to an AlGaInP subcell through a fourth tunnel junction.
所述AlGaAs/GaInAsDBR用于反射长波光子，其反射波长为1000～1300nm，该AlGaAs/GaInAsDBR中AlGaAs/GaInAs组合层的对数为10～30对。The AlGaAs/GaInAs DBR is used to reflect long-wave photons, and its reflection wavelength is 1000-1300 nm. The logarithm of the AlGaAs/GaInAs combination layer in the AlGaAs/GaInAs DBR is 10-30 pairs.
所述Ga1-3xIn3xNxAs1-x子电池中Ga1-3xIn3xNxAs1-x材料的光学带隙为0.95～1.05eV。The optical band gap of the Ga 1-3x In 3x N x As 1-x material in the Ga 1-3x In 3x N x As 1-x sub-cell is 0.95-1.05eV.
所述AlAs/AlGaAsDBR用于反射中长波光子，其反射波长为800～1000nm，该AlAs/AlGaAsDBR中AlAs/AlGaAs组合层的对数为10～30对。The AlAs/AlGaAsDBR is used to reflect medium and long wave photons, and its reflection wavelength is 800-1000nm, and the logarithm of the AlAs/AlGaAs combination layer in the AlAs/AlGaAsDBR is 10-30 pairs.
所述Ga1-3yIn3yNyAs1-y子电池中Ga1-3yIn3yNyAs1-y材料的光学带隙为1.25～1.35eV。The optical band gap of the Ga 1-3y In 3y N y As 1-y material in the Ga 1-3y In 3y N y As 1-y sub-cell is 1.25-1.35 eV.
所述AlGaInAs子电池中AlGaInAs材料的光学带隙为1.6～1.7eV。The optical band gap of the AlGaInAs material in the AlGaInAs sub-cell is 1.6-1.7 eV.
所述AlGaInP子电池中AlGaInP材料的光学带隙为2.0～2.1eV。The optical band gap of the AlGaInP material in the AlGaInP sub-cell is 2.0-2.1 eV.
下面为本实施例上述含DBR结构的五结太阳能电池的具体制备过程，其情况如下：The following is the specific preparation process of the above-mentioned five-junction solar cell containing the DBR structure of the present embodiment, and the situation is as follows:
首先，以4英寸p型Ge单晶片为衬底，然后采用金属有机化学气相沉积技术(MOCVD)或分子束外延生长技术(MBE)在Ge衬底的上表面依次生长GaInAs/GaInP缓冲层、第一隧道结、AlGaAs/GaInAsDBR、Ga1-3xIn3xNxAs1-x子电池、第二隧道结、AlAs/AlGaAsDBR、Ga1-3yIn3yNyAs1-y子电池、第三隧道结、AlGaInAs子电池、第四隧道结和AlGaInP子电池，即可完成含DBR结构的五结太阳能电池的制备。First, a 4-inch p-type Ge single wafer was used as the substrate, and then a GaInAs/GaInP buffer layer was sequentially grown on the upper surface of the Ge substrate by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). First tunnel junction, AlGaAs/GaInAsDBR, Ga 1-3x In 3x N x As 1-x subcell, second tunnel junction, AlAs/AlGaAsDBR, Ga 1-3y In 3y N y As 1-y subcell, third tunnel junction Junction, AlGaInAs sub-cell, fourth tunnel junction and AlGaInP sub-cell, the preparation of a five-junction solar cell with a DBR structure can be completed.
综上所述，本发明利用DBR反射层结构，并结合GaInNAs材料自身特点，在五结太阳能电池的Ga1-3xIn3xNxAs1-x子电池和Ga1-3yIn3yNyAs1-y子电池下方分别插入AlGaAs/GaInAsDBR和AlAs/AlGaAsDBR，通过调节DBR结构参数，使初次没有被GaInNAs材料的吸收光子反射回去被二次吸收，相当于变相地增加了GaInNAs的“有效吸收厚度”，这不仅可以满足五结电池的理论设计要求，又能解决实际制备过程中GaInNAs材料少子扩散长度较小的问题，还可以节约电池的生产成本，可最大程度地发挥五结电池的优势，显著提高电池效率。总之，本发明可以更加充分地利用太阳光能量，提高GaAs多结电池的光电转换效率，值得推广。In summary, the present invention utilizes the DBR reflective layer structure, combined with the characteristics of the GaInNAs material itself, in the Ga 1-3x In 3x N x As 1-x sub-cell and Ga 1-3y In 3y N y As of the five-junction solar cell AlGaAs/GaInAsDBR and AlAs/AlGaAsDBR are respectively inserted under the 1-y sub-cell. By adjusting the structural parameters of the DBR, the photons that are not absorbed by the GaInNAs material for the first time are reflected back and absorbed again, which is equivalent to increasing the "effective absorption thickness" of GaInNAs in a disguised form. ", which can not only meet the theoretical design requirements of the five-junction battery, but also solve the problem of the small minority carrier diffusion length of the GaInNAs material in the actual preparation process, save the production cost of the battery, and maximize the advantages of the five-junction battery. Significantly improves battery efficiency. In a word, the present invention can make full use of sunlight energy and improve the photoelectric conversion efficiency of GaAs multi-junction cells, which is worthy of popularization.
以上所述之实施例子只为本发明之较佳实施例，并非以此限制本发明的实施范围，故凡依本发明之形状、原理所作的变化，均应涵盖在本发明的保护范围内。The implementation examples described above are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, all changes made according to the shape and principles of the present invention should be covered within the protection scope of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510812277.9A CN105355670B (en) | 2015-11-19 | 2015-11-19 | Five-junction solar cell with DBR structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510812277.9A CN105355670B (en) | 2015-11-19 | 2015-11-19 | Five-junction solar cell with DBR structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105355670A true CN105355670A (en) | 2016-02-24 |
| CN105355670B CN105355670B (en) | 2017-03-22 |
Family
ID=55331602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510812277.9A Active CN105355670B (en) | 2015-11-19 | 2015-11-19 | Five-junction solar cell with DBR structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105355670B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | A double-sided growth four-junction solar cell with a reflective layer and its preparation method |
| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | Temperature monitoring method applied to the preparation of six-junction solar cells with DBR structure |
| CN106449848A (en) * | 2016-10-28 | 2017-02-22 | 上海空间电源研究所 | Multi-junction solar cell containing composite multi-photon cavity |
| CN107221574A (en) * | 2017-07-19 | 2017-09-29 | 中山德华芯片技术有限公司 | Compound dbr structure applied to multijunction solar cell and preparation method thereof |
| CN107666110A (en) * | 2016-07-28 | 2018-02-06 | 三菱电机株式会社 | Optical semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203721752U (en) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | Three-junction solar cell with distributed Bragg reflector |
| US9018521B1 (en) * | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
| CN205385027U (en) * | 2015-11-19 | 2016-07-13 | 中山德华芯片技术有限公司 | A five-junction solar cell with DBR structure |
-
2015
- 2015-11-19 CN CN201510812277.9A patent/CN105355670B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9018521B1 (en) * | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
| CN203721752U (en) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | Three-junction solar cell with distributed Bragg reflector |
| CN205385027U (en) * | 2015-11-19 | 2016-07-13 | 中山德华芯片技术有限公司 | A five-junction solar cell with DBR structure |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | A double-sided growth four-junction solar cell with a reflective layer and its preparation method |
| CN107666110A (en) * | 2016-07-28 | 2018-02-06 | 三菱电机株式会社 | Optical semiconductor device |
| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | Temperature monitoring method applied to the preparation of six-junction solar cells with DBR structure |
| CN106449848A (en) * | 2016-10-28 | 2017-02-22 | 上海空间电源研究所 | Multi-junction solar cell containing composite multi-photon cavity |
| CN107221574A (en) * | 2017-07-19 | 2017-09-29 | 中山德华芯片技术有限公司 | Compound dbr structure applied to multijunction solar cell and preparation method thereof |
| CN107221574B (en) * | 2017-07-19 | 2023-04-18 | 中山德华芯片技术有限公司 | Composite DBR structure applied to multi-junction solar cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105355670B (en) | 2017-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105355680B (en) | Six-junction solar cell with matched crystal lattices | |
| CN112447868B (en) | A high-quality four-junction space solar cell and its preparation method | |
| CN104465843B (en) | Double-sided growth GaAs four-junction solar cell | |
| CN105826420A (en) | A double-sided growth four-junction solar cell with a reflective layer and its preparation method | |
| CN105355670B (en) | Five-junction solar cell with DBR structure | |
| CN109301006B (en) | DBR structure applied to lattice mismatched multi-junction solar cell | |
| CN210535681U (en) | Lattice-mismatched five-junction solar cell | |
| CN106024924A (en) | Lattice mismatch solar cell containing novel tunneling junction and preparation method thereof | |
| CN106252451B (en) | A five-junction stacked solar cell and its preparation method | |
| CN101478014A (en) | Light splitting manufacturing process for five-junction solar cell system | |
| CN109326674B (en) | Five-junction solar cell containing multiple double heterojunction sub-cells and preparation method thereof | |
| CN104241416B (en) | Three-junction solar cell with quantum well structure | |
| CN105576068B (en) | Double-face-growing InP five-junction solar battery | |
| CN109148621B (en) | Double-sided growth efficient six-junction solar cell and preparation method thereof | |
| CN104465809B (en) | Double-face growing silicon-based four-junction solar cell | |
| CN206282866U (en) | A five-junction tandem solar cell | |
| CN205385027U (en) | A five-junction solar cell with DBR structure | |
| CN205385028U (en) | A lattice-matched six-junction solar cell | |
| CN105810760A (en) | A lattice-matched five-junction solar cell and manufacturing method thereof | |
| CN109638089B (en) | A method for manufacturing a spatial GaInP/GaAs/CuInGaSe triple junction cell epitaxial wafer | |
| CN205194710U (en) | A four-junction solar cell with a reflective layer | |
| CN209045576U (en) | A kind of novel dbr structure applied to lattice mismatch multijunction solar cell | |
| CN204315612U (en) | Double-sided growth four-junction solar cell with quantum structure | |
| CN103000740A (en) | GaAs/GaInP double knot solar battery and manufacturing method thereof | |
| CN106206849B (en) | Temperature monitoring method for preparing six-junction solar cell with DBR structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A five junction solar cell with DBR structure Effective date of registration: 20210929 Granted publication date: 20170322 Pledgee: Industrial Bank Limited by Share Ltd. Zhongshan branch Pledgor: ZHONGSHAN DEHUA CHIP TECHNOLOGY Co.,Ltd. Registration number: Y2021980010236 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |