CN101478014A - Light splitting manufacturing process for five-junction solar cell system - Google Patents
Light splitting manufacturing process for five-junction solar cell system Download PDFInfo
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- CN101478014A CN101478014A CNA2008102431251A CN200810243125A CN101478014A CN 101478014 A CN101478014 A CN 101478014A CN A2008102431251 A CNA2008102431251 A CN A2008102431251A CN 200810243125 A CN200810243125 A CN 200810243125A CN 101478014 A CN101478014 A CN 101478014A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
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- 238000005516 engineering process Methods 0.000 description 7
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- 238000013082 photovoltaic technology Methods 0.000 description 5
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Abstract
The invention discloses a spectrum-dividing fabrication method of a five-junction solar battery system. The method is characterized in that solar spectrum are divided by two spectrum-dividing devices into a continuous high-energy region, a sub-high-energy region and a low-energy region sequentially; a single junction structure is adopted in the high-energy region to match the high-energy spectra; and two double-junction tandem structures with different band gap widths are adopted in the sub-high-energy region and the low-energy region to match the sub-high-energy spectra and the low-energy spectra, so as to achieve absorption and conversion of full-spectrum energy of the solar light. By adopting the spectrum-dividing devices, the two-plus-two-plus-one structure, the solar battery system can absorb and utilize energy of the solar spectral bands matched with the band gap width of the material, thereby reducing thermal loss in photoelectrical conversion, maximally realizing solar full-spectrum absorption and improving the photoelectrical conversion efficiency. Meanwhile, the solar battery system can obviate low cost resulting from the adoption of a plurality of different substrates in a mechanical tandem solar battery system, and can effectively solve the problem of lattice mismatch during the growth of single four-junction tandem semiconductor battery material.
Description
Technical field
The present invention relates to the photovoltaic technology field that solar energy utilizes, relate in particular to the beam-splitting structure design and the making of solar cell system.
Background technology
The worsening shortages of conventional energy resource such as oil, coal and to its excessively the earth ecology problem that caused of exploitation be the challenge of the maximum that faced human 21 century.The solar energy highly effective generation technology as a kind of cleaning, the renewable energy utilization technology constantly makes a breakthrough.Crystal-silicon solar cell, amorphous silicon solar cell, amorphous silicon film solar battery, III-V compound semiconductor solar cell, II-VI compound semiconductor polycrystal film solar cell etc., increasing solar cell technology reaches its maturity.Improving constantly and the lasting reduction of manufacturing cost of photoelectric conversion efficiency makes photovoltaic technology all obtain using widely in space and ground.Look back photovoltaic technology in nearest 10 years development, aspect the efficient raising, the solar battery structure of tying tandem type is the most noticeable more.2007, the average efficiency of InGaP/ (In) the GaAs/Ge three knot cascade solar cell large-scale production that people such as the breadboard R.R.King of U.S.'s renewable energy resources make was near 30%.Under 240 times of optically focused, the lab A M1.5D efficient of this multijunction solar cell has surpassed 40%.Multijunction structure can realize the full spectral absorption to sunlight effectively, thereby improves photoelectric conversion efficiency.
Because the Energy distribution broad in the solar spectrum, existing any semi-conducting material all can only absorb the photon of energy greater than energy gap.The less photon of energy will be absorbed by the back electrode metal through battery in the sunlight, is transformed into heat energy; High-energy photon exceeds the excess energy of energy gap width, then release the dot matrix atom that battery material itself is passed in effect by the energy calorimetric of photo-generated carrier, makes material heating itself.These energy all can not be passed to load by photo-generated carrier, become effective electric energy.Therefore the theoretical transformation efficient of unijunction solar cell is generally lower.
In addition, the growth technology of semi-conducting material, particularly the development of the maturation of the gas phase epitaxy of metal organic compound technology of III-V compound semiconductor makes the whole integrated form of preparation tie cascade solar cell more becomes possibility, in theory, footing is many more, efficient is high more, and this has been proved to be one of effective way of raising the efficiency.Yet practice up to now shows, is that the photovoltaic technology of representative still can't reach the optimum Match with solar spectrum with InGaP/ (In) GaAs/Ge three knot cascade solar cells; If will mate with solar spectrum to greatest extent, just must in this three knots cascade battery, increase the knot that more has different band gap.Though band gap width can desirable be arranged in pairs or groups, the restriction of the problems such as stress defective that are subjected to lattice constant mismatch between different semi-conducting materials but theoretic efficient often improves and bring thus, and the peak efficiency that causes the monolithic four of direct growth to tie the tandem type solar cells only is 35.7%.The above solar cell of three knots of growing simultaneously is very difficult, and the growth rate of finished products of material is low, cost is expensive.
Summary of the invention
At above-mentioned be that the photovoltaic technology of representative still can't reach the optimum Match with solar spectrum with InGaP/ (In) GaAs/Ge three knot tandem solar cell, and the objective difficulty of making lattice mismatch between the semi-conducting material that the above monolithic tandem solar cell of three knots exists, purpose of the present invention is intended to: the light splitting manufacturing process that a kind of five-junction solar cell system is provided, the mechanical cascade solar cell photoelectric conversion efficiency of three knots was higher relatively in the past inheriting, stable, on the basis of life-span length, make the efficient of entire cell system reach optimum, obtain higher open circuit voltage, make optical output power reach maximization.
For reaching above-mentioned purpose, the solution that the present invention proposes is:
The light splitting manufacturing process of five-junction solar cell system is characterized in that: utilize two light-dividing devices in turn solar spectrum to be divided into continuous high energy district, inferior high energy district and low energy district, adopt a unijunction structure to mate high energy spectrum in the high energy district; And mate time high energy spectrum and low energy spectral bands by two two knot cascade structures respectively with the low energy district with different band gap widths in inferior high energy district, realize absorption conversion to the full spectrum of sunlight.
Further, described light splitting manufacturing process comprises the steps:
Step 1: the epitaxial wafer that utilizes metal-organic chemical vapor deposition equipment method growth for solar battery;
Step 2: on epitaxial wafer, make top electrode, below substrate, make bottom electrode;
Step 3: select for use two dichroscope beam splitting systems to arrange in turn as light-dividing device, the transmission that utilizes first order dichroscope and reflection are divided into the two-beam of high energy spectrum and relative low energy spectrum with sunlight from the space, the transmission that utilizes second level dichroscope again with reflect the two-beam that the sunlight of relative low energy spectrum is divided into inferior high energy spectrum and low energy spectrum from the space;
Step 4: two the binode cascade batteries and the single junction cell of different band gap widths are aimed at corresponding band light beam after the beam split respectively, and the electricity of carrying out battery connects and light focusing unit is installed.
Further, described epitaxial wafer is three groups, is made of two binode cascade structures and a unijunction structure collocation respectively.
Further, a described binode cascade structure is the InGaP/GaAs structure, absorbs to answer time high energy wave band sunlight; Described another binode cascade structure is In
0.3Ga
0.7As/Ge structure or be grown in InGaAsP/In on the InP substrate
0.58Ga
0.42The As structure absorbs corresponding low energy wave band sunlight; Described unijunction structure is unijunction InGaN or ZnSe structure, the corresponding high energy wave band sunlight that absorbs.
The light splitting manufacturing process of the five-junction solar cell system of the present invention's design, its advantage is:
(1). add a solar battery structure of tying again by adopting light-dividing device and two to add two, constitute the solar cell system of cascade with the different semi-conducting material of multiple band gap width, absorb the solar spectrum that is complementary most with its material gap length, reduce the heat energy loss in the opto-electronic conversion, realize the absorption of the full spectrum of sunlight to a greater extent, improve photoelectric conversion efficiency.
(2). the sunlight after adopting light-dividing device to optically focused is divided into three parts of different-waveband, respectively by three groups of different absorbed, reduced in the mechanical tandem type solar cell system and to have used expensive that a plurality of different substrate caused, and the lattice mismatch issue of the above monolithic cascaded semiconductor solar cell material of three knots of effectively having avoided growing.
(3). based on the application of the multijunction solar cell of optically focused, beam split, can promote the power output of solar battery system unit are, and on system level, reduce the manufacturing cost of unit power.
Description of drawings
Fig. 1 is the schematic diagram of beam split multijunction solar cell of the present invention system one example structure;
Fig. 2 is the schematic diagram of another example structure of beam split multijunction solar cell of the present invention system.
Embodiment
For making the above-mentioned purpose of the present invention, feature and advantage can more obvious easy understanding, below special in conjunction with the specific embodiment of the invention, be described in detail below:
The schematic diagram of beam split multijunction solar cell system configuration of the present invention as depicted in figs. 1 and 2.Can be clear that by accompanying drawing: this multijunction solar cell system configuration comprises: cell panel body, epitaxial wafer and Semiconductor substrate thereof, light-dividing device.Especially, this solar cell system be two add two add again one the knot configuration, promptly by binode In
0.3Ga
0.7As/Ge or be grown in InGaAsP/In on the InP substrate
0.58Ga
0.42The solar cell 1c of As cascade or 1d, binode InGaP/GaAs tandem solar cell b carry out making after electricity links to each other with the solar cell 1a of unijunction InGaN or ZnSe.As core technology of the present invention, this two adds two and adds in the manufacture method of a junction solar cell system again, also comprises a light-dividing device.This light-dividing device 2 can select for use first order dichroscope beam splitting system 2a and second level dichroscope beam splitting system 2b collocation to constitute, be used for sunlight A behind the optically focused is divided into high energy district A1 and relative low energy district A2 two parts earlier by first order dichroscope beam splitting system 2a, more relative low energy district A2 be divided into time high energy district A3 and low energy district A4 two parts by second level dichroscope beam splitting system 2b.Select a unijunction InGaN or ZnSe battery structure 1a for use at high energy district A1, realize absorption the above photon of 2.7ev; Then select the battery structure 1b of a binode InGaP/GaAs cascade for use in inferior high energy district, realize absorption, then adopt a binode In in the low energy district 1.4ev～2.7eV photon
0.3Ga
0.7As/Ge or be grown in InGaAsP/In on the InP substrate
0.58Ga
0.42The battery structure 1c or the 1d of As cascade realize the absorption to the following photon of 1.4ev.Add two by this two and add a structure of tying again, the semi-conducting materials different with multiple band gap width constitute the cascade solar cell system, sub-batteries at different levels absorb the solar spectrum that is complementary most with its material band gap width, thereby reduce current loss and the loss of voltage of single junction cell in photoelectric conversion process, realize the full spectrum effective conversion of sunlight, improve photoelectric conversion efficiency.
The manufacture method of this multijunction solar cell, its main implementation step is:
1. use the epitaxial wafer of metal-organic chemical vapor deposition equipment method growth for solar battery.The structure of this battery system epitaxial wafer is respectively binode In
0.3Ga
0.7As/Ge or be grown in InGaAsP/In on the InP substrate
0.58Ga
0.42As cascade, binode InGaP/GaAs cascade and unijunction InGaN or ZnSe;
2. be processed into solar cell respectively on three groups of epitaxial wafers.On the epitaxial wafer of sub-batteries at different levels, make top electrode, and below substrate, make bottom electrode;
3. make the light-dividing device that two dichroscope beam splitting systems are arranged in turn, light-dividing device as this multijunction solar cell, utilize the transmission of this dichroscope and reflect the three-beam that solar spectrum spatially is divided into different-waveband, realize efficient decomposition the full spectrum of sunlight.
4. two double junction structure are aimed at corresponding band light beam after the beam split respectively with the solar cell of a unijunction structure, battery is carried out the electricity connection and collective optics is installed, realize the integrated of solar cell, optically focused and beam splitter.
The battery of making according to the manufacture method of beam split multijunction solar cell provided by the invention system, add a solar battery structure of tying again by adopting light-dividing device and two to add two, constitute the solar cell of cascade with the different semi-conducting material of multiple band gap width, absorb the solar spectrum wave band that is complementary most with its material gap length, can make full use of the energy of the above sunlight of 2.4eV.By Theoretical Calculation as can be known, the solar cell of this configuration can reduce the heat energy loss in the opto-electronic conversion, realize the absorption conversion of the full spectrum of sunlight to a greater extent, under 90% external quantum efficiency, the battery efficiency under 100 times of optically focused conditions can reach 51.2%.
In addition, sunlight after adopting light-dividing device to optically focused carries out beam split, respectively by many groups of different absorbed, reduce mechanical tandem type solar cell and used expensive that a plurality of different substrate causes, and the lattice mismatch issue of the above semi-conducting material of three knots of effectively having avoided growing.Application based on the multijunction solar cell system of optically focused, beam split has promoted the power of the area of solar battery system unit, and reduced the manufacturing cost of unit power on system level, has the market using value of extensive reality.
In sum, be detailed description to the specific embodiment of the invention, this case protection range is not constituted any limitation, all employing equivalents or equivalence are replaced and the technical method of formation, all drop within the rights protection scope of the present invention.
Claims (6)
1. the light splitting manufacturing process of five-junction solar cell system is characterized in that: utilize two light-dividing devices in turn solar spectrum to be divided into continuous high energy district, inferior high energy district and low energy district, adopt a unijunction structure to mate the high energy wave band in the high energy district; And mate time high energy wave band and low energy wave bands by two two knot cascade structures respectively with the low energy district with different band gap widths in inferior high energy district, realize absorption conversion to the full spectrum of sunlight.
2. the light splitting manufacturing process of five-junction solar cell system according to claim 1, it is characterized in that: described light splitting manufacturing process comprises the steps:
Step 1: the epitaxial wafer that utilizes metal-organic chemical vapor deposition equipment method growth for solar battery;
Step 2: on epitaxial wafer, make top electrode, below substrate, make bottom electrode;
Step 3: select for use two dichroscope beam splitting systems to arrange in turn as light-dividing device, the transmission that utilizes first order dichroscope and reflection are divided into the two-beam of high energy spectrum and relative low energy spectrum with sunlight from the space, the transmission that utilizes second level dichroscope again with reflect the two-beam that the sunlight of relative low energy spectrum is divided into inferior high energy spectrum and low energy spectrum from the space;
Step 4: two the binode cascade batteries and the single junction cell of different band gap widths are aimed at corresponding spectrum band light beam after the beam split respectively, and the electricity of carrying out battery connects and light focusing unit is installed.
3. the light splitting manufacturing process of five-junction solar cell system according to claim 2, it is characterized in that: described epitaxial wafer is three groups, is made of two binode cascade structures and a unijunction structure collocation respectively.
4. the light splitting manufacturing process of five-junction solar cell system according to claim 3, it is characterized in that: a described binode cascade structure is the InGaP/GaAs structure, absorbs corresponding time high energy spectral band.
5. the light splitting manufacturing process of five-junction solar cell system according to claim 3, it is characterized in that: described another binode cascade structure is In
0.3Ga
0.7As/Ge structure or be grown in InGaAsP/In on the InP substrate
0.58Ga
0.42The As structure absorbs corresponding low energy spectral band.
6. the light splitting manufacturing process of five-junction solar cell system according to claim 3, it is characterized in that: described unijunction structure is unijunction InGaN or ZnSe structure, absorbs corresponding high energy spectral band.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976689A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Five-junction semiconductor solar photovoltaic cell chip |
| CN101976691A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Five-knot compound semiconductor solar photovoltaic cell chip |
| CN103888051A (en) * | 2014-03-24 | 2014-06-25 | 北京工业大学 | Holographic light condensing and splitting solar power generation module |
| CN104266955A (en) * | 2014-09-02 | 2015-01-07 | 上海凯度机电科技有限公司 | High content image flow biological microscopic analysis system |
| CN104393830A (en) * | 2014-10-13 | 2015-03-04 | 北京工业大学 | Novel light condensation and light splitting integration system applied to high-efficiency solar cell |
| CN110266248A (en) * | 2019-06-19 | 2019-09-20 | 中国科学院电工研究所 | A kind of thermal photovoltaic power generator |
| CN113890481A (en) * | 2021-11-03 | 2022-01-04 | 浙江大学 | Solar double-frequency-division light energy step power generation device and system |
| CN113992146A (en) * | 2021-11-03 | 2022-01-28 | 浙江大学 | Solar spectrum frequency division and residual light convergence reradiation coupled light energy cascade power generation device and system |
-
2008
- 2008-12-01 CN CNA2008102431251A patent/CN101478014A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976689A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Five-junction semiconductor solar photovoltaic cell chip |
| CN101976691A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Five-knot compound semiconductor solar photovoltaic cell chip |
| CN101976689B (en) * | 2010-08-23 | 2012-05-23 | 北京工业大学 | Five-junction semiconductor solar photovoltaic cell chip |
| CN103888051A (en) * | 2014-03-24 | 2014-06-25 | 北京工业大学 | Holographic light condensing and splitting solar power generation module |
| CN104266955A (en) * | 2014-09-02 | 2015-01-07 | 上海凯度机电科技有限公司 | High content image flow biological microscopic analysis system |
| CN104393830A (en) * | 2014-10-13 | 2015-03-04 | 北京工业大学 | Novel light condensation and light splitting integration system applied to high-efficiency solar cell |
| CN110266248A (en) * | 2019-06-19 | 2019-09-20 | 中国科学院电工研究所 | A kind of thermal photovoltaic power generator |
| CN113890481A (en) * | 2021-11-03 | 2022-01-04 | 浙江大学 | Solar double-frequency-division light energy step power generation device and system |
| CN113992146A (en) * | 2021-11-03 | 2022-01-28 | 浙江大学 | Solar spectrum frequency division and residual light convergence reradiation coupled light energy cascade power generation device and system |
| CN113890481B (en) * | 2021-11-03 | 2024-04-05 | 浙江大学 | Solar energy double-frequency-division light energy step power generation device and system |
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