CN101478015A - Light splitting manufacturing process for four-junction solar cell system - Google Patents
Light splitting manufacturing process for four-junction solar cell system Download PDFInfo
- Publication number
- CN101478015A CN101478015A CNA2008102431266A CN200810243126A CN101478015A CN 101478015 A CN101478015 A CN 101478015A CN A2008102431266 A CNA2008102431266 A CN A2008102431266A CN 200810243126 A CN200810243126 A CN 200810243126A CN 101478015 A CN101478015 A CN 101478015A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- spectrum
- solar
- junction
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000001228 spectrum Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- GTLQJUQHDTWYJC-UHFFFAOYSA-N zinc;selenium(2-) Chemical group [Zn+2].[Se-2] GTLQJUQHDTWYJC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 9
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000013082 photovoltaic technology Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses the fabrication method of a four-junction solar battery system. The method is characterized in that the solar spectrum is divided into a high-energy region and a low-energy region by a spectrum-dividing device; a single-junction structure is adopted in the high-energy region to match the spectrum in the high-energy region; and a three-junction tandem structure is adopted in the low-energy region to match the spectrum in the low-energy region, so as to achieve absorption and conversion of solar full-spectrum energy. By adopting the spectrum-dividing device and the three-plus-one structure, the battery system can absorb and utilize energy of solar spectral bands matched with the band gap width of the material, thereby reducing thermal loss during photoelectrical conversion, maximally achieving solar full-spectrum absorption and energy conversion and achieving photoelectrical conversion efficiency. The solar battery system can obviate low cost resulting from the adoption of a plurality of different substrates in a mechanical tandem solar battery system, and can effectively solve the problem of lattice mismatch during the growth of single four-junction tandem semiconductor battery material.
Description
Technical field
The present invention relates to the photovoltaic technology field that solar energy utilizes, relate in particular to the beam-splitting structure design and the making of solar cell.
Background technology
Under the energy crisis that causes in eighties of last century seventies stimulates, also under the demand pull of spacecraft energy resource system, the continuous acquisition of technology breakthrough in photovoltaic technology field.Crystal silicon solar energy battery, non-crystal silicon solar cell, amorphous silicon thin-film solar cell, III-V compound semiconductor solar cell, II-VI compound semiconductor polycrystal film solar cell etc., increasing solar battery technology reaches its maturity.Improving constantly and the lasting reduction of manufacturing cost of photoelectric conversion efficiency makes photovoltaic technology all obtain using widely in space and ground.Look back photovoltaic technology in nearest 10 years development, aspect the efficient raising, the solar battery structure of tying tandem type is the most noticeable more.The average efficiency of InGaP/ (In) GaAs/Ge three knot tandem solar cell large-scale production in 2007 is near 30%.Under 240 times of optically focused, the lab A M1.5D efficient of this multijunction solar cell has surpassed 40%.Multijunction structure can realize the full spectral absorption to sunlight effectively, thereby improves photoelectric conversion efficiency, and in theory, footing is many more, and efficient is high more, and this has been proved to be one of effective way of raising the efficiency.
The most general manufacture method of many at present knot tandem solar cell structures is exactly to prepare sub-batteries at different levels respectively, then they is mechanically stacked up.Yet the method for mechanical cascade itself has very big shortcoming, even for the simplest double-junction solar battery, the same ubiquity of these shortcomings: at first, the top battery must be " transparent " for end battery, and when using thick substrate, doping content can not be too high.Secondly, the bottom electrode Metal Contact of top battery also must be made the grid line configuration as top electrode, and will accurately aim at the top electrode figure of the sub-battery in the two poles of the earth.The sub-battery in the two poles of the earth generally has four outputs, usually will be earlier the sub-cell interconnect of several peers on electricity, go again to be connected with the sub-battery of another grade, externally constitute a two terminal device, interconnected complexity makes mechanical cascade laminated cell be difficult to really drop into large-scale production and application on the electricity.Simultaneously, the at different levels sub-battery of mechanical cascade battery generally all will use substrate separately, and this has also increased manufacturing cost greatly.
With regard to InGaP/ (In) GaAs/Ge three-joint solar cell, its band-gap energy is respectively 1.8,1.4 and 0.67eV.Thereby InGaP is used for absorbing the sunlight generation photo-generated carrier formation photogenerated current of energy greater than 1.8eV, the hot carrier that energy produces after being absorbed greater than the photon of band gap is passed to lattice with unnecessary energy with the form of phonon and is become heat energy, the loss of voltage in the formation opto-electronic conversion.
In addition, the development of the maturation of the gas phase epitaxy of metal organic compound technology of the growth technology of semi-conducting material, particularly III-V compound semiconductor makes the preparation monolithic tie tandem solar cell more becomes possibility.Yet practice up to now shows, is that the photovoltaic technology of representative still can't reach the optimum Match with solar spectrum with InGaP/ (In) GaAs/Ge three knot tandem solar cell; If will mate with solar spectrum to greatest extent, just must in this three knots cascade battery, increase a new knot material.Though band gap width can desirable be arranged in pairs or groups, but owing to be subjected to lattice constant mismatch between different semi-conducting materials and the restriction of the problems such as stress defective brought thus, the above solar cell of growth three knots becomes very difficult, and the growth rate of finished products of material is low simultaneously, cost is expensive.
Summary of the invention
At above-mentioned be that the photovoltaic technology of representative still can't reach the optimum Match with solar spectrum with InGaP/ (In) GaAs/Ge three knot tandem solar cell, and the objective difficulty of making lattice mismatch between the semi-conducting material that the above solar cell of monolithic cascade three knots exists, purpose of the present invention is intended to: the manufacture method that a kind of four-junction solar cell is provided, the mechanical cascade solar cell photoelectric conversion efficiency of three knots was higher relatively in the past inheriting, stable, on the basis of life-span length, raising entire cell system gets the utilization ratio of sunlight, thereby obtains higher open circuit voltage and higher optical output power high conversion rate.
For reaching above-mentioned purpose, the solution that the present invention proposes is:
The manufacture method of four-junction solar cell, it is characterized in that: utilize light-dividing device that solar spectrum is divided into high energy district and low energy district, adopt a unijunction structure matching high-energy section spectrum in the high energy district, and the low energy district realizes the absorption conversion to the full spectrum of sunlight by three knot cascade structure coupling low energy region spectrum.
Further, described light splitting manufacturing process comprises the steps:
Step 1: the epitaxial wafer that utilizes metal-organic chemical vapor deposition equipment method growth for solar battery;
Step 2: on epitaxial wafer, make top electrode, below substrate, make bottom electrode;
Step 3: select for use dichroscope as light-dividing device, utilize the transmission of dichroscope and reflection is divided into solar spectrum long-wave band and short-wave band from the space two-beam;
Step 4: three knot cascades and unijunction solar cell are aimed at corresponding band light beam after the beam split respectively, and the electricity of carrying out battery connects and the installation light focusing unit.
Further, described epitaxial wafer is the cascade structure of three knot indium gallium phosphorus/GaAs/germanium; And described epitaxial wafer is unijunction indium gallium N structure or unijunction zinc selenide structure.
A kind of and the corresponding solar battery structure of the described manufacture method of claim 1 is characterized in that: described solar cell is the structure that three knots add a knot.
The manufacture method of the four-junction solar cell of the present invention's design, its beneficial effect is:
(1). by adopting the solar battery structure of light-dividing device and three-plus-one knot, constitute the solar cell of cascade with the different semi-conducting material of multiple band gap width, absorb the solar spectrum that is complementary most with its material gap length, reduce the heat energy loss in the opto-electronic conversion, realize the absorption of the full spectrum of sunlight to a greater extent, improve photoelectric conversion efficiency.
(2). the incident light separated into two parts after adopting light-dividing device to optically focused, respectively by two groups of different absorbed, reduce mechanical tandem type solar cell and used expensive that a plurality of different substrate causes, and effectively avoided the lattice mismatch issue of growth monolithic cascade four pn junction p n solar cell materials.
(3). the application based on the multijunction solar cell of optically focused, beam split has promoted the power of solar cell unit are, and reduced the manufacturing cost of unit power on system level.
Description of drawings
Fig. 1 is the schematic diagram of beam split multijunction solar cell system configuration of the present invention.
Embodiment
For making the above-mentioned purpose of the present invention, feature and advantage can more obvious easy understanding, below special in conjunction with the specific embodiment of the invention, be described in detail below:
The schematic diagram of beam split multijunction solar cell system configuration of the present invention as shown in Figure 1.Can be clear that by accompanying drawing: this multijunction solar cell system configuration comprises: cell panel body, epitaxial wafer and Semiconductor substrate thereof, light-dividing device.Especially, this solar cell system is the configuration of three-plus-one knot, is promptly undertaken making after electricity links to each other by the solar cell 1a～1c of three knot InGaP/ (In) GaAs/Ge cascades and the solar cell 3 of unijunction indium gallium nitrogen or zinc selenide.Three knot InGaP/ (In) GaAs/Ge tandem solar cell 1a～1c are ripe prior aries, and its method for making is described in detail in background technology, does not repeat them here; And the method for making of unijunction solar cell part is also according to this method.As core technology of the present invention, in the manufacture method of this three-plus-one joint solar cell, also comprise a light-dividing device 2.This light-dividing device 2 can be selected dichroscope for use, is used for sunlight A is divided into high energy district A2 and low energy district A1 two parts.Adopt a unijunction InGaN or ZnSe battery structure 3 at high energy district A2, realize absorption the above photon of 2.7ev; And the low energy district still adopts InGaP/ (In) the GaAs/Ge structure 1a～1c of comparative maturity, structure by this three-plus-one knot, the semi-conducting materials different with multiple band gap width constitute tandem solar cell, sub-batteries at different levels absorb the solar spectrum that is complementary most with its material band gap width, thereby reduce current loss and the loss of voltage of each junction battery in photoelectric conversion process, realize the full spectrum effective conversion of sunlight.
The manufacture method of this multijunction solar cell system, its main implementation step is:
1. with metal-organic chemical vapor deposition equipment method growth for solar battery epitaxial wafer.The structure of this battery epitaxial wafer is respectively InGaP/ (In) the GaAs/Ge solar cell of three knots and the InGaN or the ZnSe solar cell of unijunction;
2. be processed into solar cell respectively on two groups of epitaxial wafers.On the epitaxial wafer of sub-batteries at different levels, make top electrode, and below substrate, make bottom electrode;
3. make the dichroscope beam splitting system,, utilize the transmission of this dichroscope and reflection that solar spectrum spatially is divided into long-wave band and short-wave band two-beam, realize efficient decomposition the full spectrum of sunlight as the light-dividing device of this multijunction solar cell.
4. three knot cascades and unijunction solar cell are aimed at corresponding spectrum band light beam after the beam split respectively, battery is carried out the electricity connection and collective optics is installed, realize the integrated of solar cell, optically focused and beam splitter.
The battery of making according to the manufacture method of beam split multijunction solar cell provided by the invention, by adopting the solar battery structure of light-dividing device and three-plus-one knot, constitute the solar cell of cascade with the semi-conducting material of multiple band gap width, absorb the solar spectrum that is complementary most with the material gap length, can increase the utilance of the above solar energy of 2.7eV.By Theoretical Calculation as can be known, this three-plus-one structural type can reduce the heat energy loss in the opto-electronic conversion, realizes the absorption of the full spectrum of sunlight to a greater extent, and with the efficient raising about 6% of solar cell, photoelectric conversion efficiency reaches 47%.
In addition, incident light separated into two parts after adopting light-dividing device to optically focused, respectively by two groups of different absorbed, reduce mechanical tandem type solar cell and used expensive that a plurality of different substrate causes, and effectively avoided the lattice mismatch issue of growth monolithic four knot cascaded semiconductor solar cell materials.Based on the application of the multijunction solar cell of optically focused, beam split, can promote the power of solar cell unit are, and on system level, reduce the manufacturing cost of unit power, have the market using value of extensive reality.
In sum, be detailed description to the present invention's one specific embodiment, this case protection range is not constituted any limitation, all employing equivalents or equivalence are replaced and the technical method of formation, all drop within the rights protection scope of the present invention.
Claims (6)
1. the manufacture method of four-junction solar cell system, it is characterized in that: utilize light-dividing device that solar spectrum is divided into high energy district and low energy district, mate high-energy section spectrum in the high energy district with a single junction cell, and the low energy district realizes the absorption conversion to the full spectrum of sunlight by three knot cascade structure coupling low energy region spectrum.
2. the manufacture method of four-junction solar cell system according to claim 1, it is characterized in that: described manufacture method comprises the steps:
Step 1: the epitaxial wafer that utilizes metal-organic chemical vapor deposition equipment method growth for solar battery;
Step 2: on epitaxial wafer, make top electrode, below substrate, make bottom electrode;
Step 3: select for use dichroscope as light-dividing device, utilize the transmission of dichroscope and reflection is divided into solar spectrum long-wave band and short-wave band from the space two-beam;
Step 4: three knot cascades and unijunction solar cell are aimed at corresponding band light beam after the beam split respectively, and the electricity of carrying out battery connects and the installation light focusing unit.
3. the manufacture method of four-junction solar cell system according to claim 2 is characterized in that: described epitaxial wafer is the cascade structure of three knot indium gallium phosphorus/GaAs/germanium.
4. the manufacture method of four-junction solar cell system according to claim 2, it is characterized in that: described epitaxial wafer is a unijunction indium gallium N structure.
5. the manufacture method of four-junction solar cell system according to claim 2, it is characterized in that: described epitaxial wafer is a unijunction zinc selenide structure.
One kind with the corresponding solar battery structure of the described manufacture method of claim 1, it is characterized in that: described solar cell system be three the knot add one the knot structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102431266A CN101478015A (en) | 2008-12-01 | 2008-12-01 | Light splitting manufacturing process for four-junction solar cell system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102431266A CN101478015A (en) | 2008-12-01 | 2008-12-01 | Light splitting manufacturing process for four-junction solar cell system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101478015A true CN101478015A (en) | 2009-07-08 |
Family
ID=40838673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102431266A Pending CN101478015A (en) | 2008-12-01 | 2008-12-01 | Light splitting manufacturing process for four-junction solar cell system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101478015A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976690A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Four-junction semiconductor solar photovoltaic cell chip |
| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | It is applied to temperature monitoring method prepared by the joint solar cell containing dbr structure six |
| CN110174772A (en) * | 2019-06-24 | 2019-08-27 | 北京大学深圳研究生院 | A kind of optical spectroscopic device and light splitting photovoltaic system |
| CN110190147A (en) * | 2019-06-24 | 2019-08-30 | 北京大学深圳研究生院 | A kind of concentration photovoltaic system based on beam splitter |
-
2008
- 2008-12-01 CN CNA2008102431266A patent/CN101478015A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976690A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Four-junction semiconductor solar photovoltaic cell chip |
| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | It is applied to temperature monitoring method prepared by the joint solar cell containing dbr structure six |
| CN110174772A (en) * | 2019-06-24 | 2019-08-27 | 北京大学深圳研究生院 | A kind of optical spectroscopic device and light splitting photovoltaic system |
| CN110190147A (en) * | 2019-06-24 | 2019-08-30 | 北京大学深圳研究生院 | A kind of concentration photovoltaic system based on beam splitter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Almansouri et al. | Supercharging silicon solar cell performance by means of multijunction concept | |
| Bosi et al. | The potential of III‐V semiconductors as terrestrial photovoltaic devices | |
| Flamand et al. | Towards highly efficient 4-terminal mechanical photovoltaic stacks | |
| Razykov et al. | Solar photovoltaic electricity: Current status and future prospects | |
| Miles et al. | Photovoltaic solar cells: An overview of state-of-the-art cell development and environmental issues | |
| Kazmerski | Solar photovoltaics R&D at the tipping point: A 2005 technology overview | |
| CN101859813B (en) | Method for manufacturing quadri-junction GaInP/GaAs/InGaAs/Ge solar cells | |
| CN101950774A (en) | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery | |
| Mattos et al. | New module efficiency record: 23.5% under 1-sun illumination using thin-film single-junction GaAs solar cells | |
| Zeman | Thin-film silicon PV technology | |
| CN101478014A (en) | Light splitting manufacturing process for five-junction solar cell system | |
| CN105355680A (en) | Crystal lattice matching six-junction solar energy cell | |
| Donne et al. | Solar photovoltaics: a review | |
| CN101478015A (en) | Light splitting manufacturing process for four-junction solar cell system | |
| CN104157725B (en) | Method for manufacturing GaInP/GaAs/InGaAsP/InGaAs four-junction cascading solar cell | |
| Ji et al. | Transmissive spectrum splitting multi-junction solar module for hybrid CPV/CSP system | |
| CN108172638A (en) | A kind of three-junction solar battery | |
| Bhattacharya et al. | Effects of gallium-phosphide and indium-gallium-antimonide semiconductor materials on photon absorption of multijunction solar cells | |
| Yang et al. | Silicon-based multi-junction solar cell with 19.7% efficiency at 1-sun using areal current matching for 2-terminal operation | |
| CN110931593A (en) | Lattice-matched silicon-based arsenic-free compound four-junction solar cell | |
| CN102339889A (en) | Double-junction serial InGaAs/InGaAsP (indium gallium arsenium/indium gallium arsenium phosphorus) double-end solar cell and manufacturing method thereof | |
| Arbez et al. | 4 junction dilute nitride solar cell optimization: comparing current matching approaches in detailed balance algorithms | |
| Razykov | Photovoltaic solar electricity: State of the art and future prospects | |
| Amin et al. | Cadmium selenide and cadmium telluride based high efficiency multi junction photovoltaics for solar energy harvesting | |
| Khvostikov et al. | Single− junction solar cells for spectrum splitting PV system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SIN Free format text: FORMER OWNER: SUZHOU NANO TECHNIQUE + NANO BIONIC RESEARCH INST. Effective date: 20100908 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215125 NO.398, RUOSHUI ROAD, GAOJIAO DISTRICT, DUSHUHU, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE TO: 215123 NO.398, RUOSHUI ROAD, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100908 Address after: 215123 Suzhou Industrial Park, Jiangsu, if waterway No. 398 Applicant after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: 215125 Jiangsu city of Suzhou province Dushu Lake Industrial Park No. 398 waterway if higher education Applicant before: Suzhou Nano Technique & Nano Bionic Research Inst. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20090708 |