CN101976690A - Four-junction semiconductor solar photovoltaic cell chip - Google Patents
Four-junction semiconductor solar photovoltaic cell chip Download PDFInfo
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- CN101976690A CN101976690A CN 201010259999 CN201010259999A CN101976690A CN 101976690 A CN101976690 A CN 101976690A CN 201010259999 CN201010259999 CN 201010259999 CN 201010259999 A CN201010259999 A CN 201010259999A CN 101976690 A CN101976690 A CN 101976690A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a four-junction semiconductor solar photovoltaic cell chip, belonging to the field of semiconductor optoelectronic technique. The key of the invention is that a layer of ZnSe material with high forbidden band width is added as a top cell on the material system of a traditional multi-junction solar cell chip and can expand the absorption spectrum range of the solar cell chip, therefore, the problem that the traditional solar cell chip cannot sufficiently absorb the great quantity of energy flow distributed in the visible light and the ultraviolet band of the solar radiation is solved effectively, and the photoelectric conversion efficiency of the solar cell chip is enhanced.
Description
Technical field
The invention discloses a kind of four pn junction p n solar-energy photo-voltaic cell chip structures, belong to field of semiconductor photoelectron technique.
Background technology
Solar battery chip is a kind of energy with broad prospect of application, has long-life, environmental protection and flexibility three big advantages.The solar battery chip life-span is long, as long as the sun exists, solar battery chip just can once be invested and long-term the use; Compare with thermal power generation, nuclear energy power generation, solar battery chip can not cause environmental pollution; Solar battery chip can large, medium and smallly develop simultaneously, and arrives the medium-sized power station of gigawatt greatly, and little of the solar battery chip group of only using for a family, this is that other energy is incomparable.At present, the application of solar battery chip has entered departments such as industry, commerce, agricultural, communication, household electrical appliance and public utility from military field, space industry, especially can be dispersedly in the outlying district, high mountain, desert, island and rural area use, the transmission line that involves great expense with saving.
But, existing solar battery chip photoelectric conversion efficiency is relatively low have been restricted it and further has been widely used in real work, the life, this owing to solar radiant energy stream asymmetric distribution in being peak value with the 500nm wavelength around, from ultraviolet 200nm wave band to far infrared 2600nm wave band than in the wide spectral range, particularly in China Tibet, the contour height above sea level in Xinjiang or high latitude area, solar irradiation can flow and concentrate on short-wavelength visible light and ultraviolet light wave band part especially in a large number.And top battery chip energy gap is limited in about 1.9ev in the present multijunction solar cell chip, corresponding absorbing wavelength is about 650nm, long-range after this absorbing wavelength when the shortwave subwave, absorption efficiency descends and to cause being positioned in the solar radiant energy stream the big energy that visible light and ultraviolet band inside comprises and fail to obtain effective absorption, utilization.Therefore how to improve solar battery chip the energy absorption that obtains as yet in sun visible light, the ultraviolet spectra to make full use of is become the existing solar battery chip photoelectric conversion efficiency of raising, promotion, solar battery chip development, and then promote this green energy resource to be able to the key of extensive use.
Summary of the invention
The objective of the invention is to: provide a kind of with the multijunction solar cell chip of ZnSe material as the top battery chip, the absorption spectra scope of expansion solar battery chip chip, fully absorb a large amount of energy streams that solar radiation is distributed in visible light, ultraviolet band, improve the photoelectric conversion efficiency of solar battery chip.
The objective of the invention is to realize by following technical scheme:
A kind of four pn junction p n solar-energy photo-voltaic cell chips are grow successively end battery (p-Ge, n-Ge) 2 of substrate with germanium (Ge) single-chip 1, nucleating layer (GaAs) 3, resilient coating (GaInAs) 4, barrier layer (n-GaInAs) 5, tunnel junction (n++AlGaAs, p++GaInAs) 6, barrier layer (p+GaInAs) 7, the second junction batteries (p-GaInAs, n-GaInAs) 8, Window layer (n+AlGaInP/AlInAs) 9, second tunnel junction (n++GaInAs, p++AlGaAs) 10, the second barrier layers (p+GaInP) 11, the 3rd junction battery (p-GaInP, n-GaInP) 12, the second Window layer (n+AlInP), 13, the three tunnel junction (n++ZnSe, p++ZnSe) 14, the 3rd barrier layer (n+ZnSe) 15, top battery (p-ZnSe, n-ZnSe) 16, the 3rd Window layer (n+ZnSe) 17, ohmic contact layer (n+ZnSe) 18.
Adopting the semiconductor monocrystal sheet is that substrate adopts metal organic chemical vapor deposition (MOCVD) or molecule to come extension (MBE) method growth multijunction solar cell chip.
A kind of four pn junction p n solar-energy photo-voltaic cell chips of the present invention, its key are to increase the ZnSe material top battery chip with high energy gap on existing multijunction solar cell chip material system.The ZnSe material appends to the absorption spectra scope that can expand solar battery chip on the existing multijunction solar cell chip material system as the top battery chip, effectively solve existing solar battery chip solar radiation is distributed in a large amount of problems that can streams can't fully absorb of visible light and ultraviolet band, improve the photoelectric conversion efficiency of multijunction solar cell chip.
Description of drawings
A kind of four pn junction p n solar-energy photo-voltaic cell chip schematic diagrames of Fig. 1.
Among the figure: 1, germanium (Ge) single-chip, 2, end battery, 3, nucleating layer, 4, resilient coating, 5, barrier layer, 6, tunnel junction, 7, barrier layer, 8, second junction battery, 9, Window layer, 10, second tunnel junction, 11, second barrier layer, the 12, the 3rd junction battery, 13, second Window layer, the 14, the 3rd tunnel junction, the 15, the 3rd barrier layer, 16, top battery, the 17, the 3rd Window layer, 18, ohmic contact layer.
Embodiment
In order to further specify structure of the present invention and feature, the present invention is further illustrated below in conjunction with embodiment and accompanying drawing.As shown in Figure 1, a kind of four pn junction p n solar-energy photo-voltaic cell chips adopt metal organic chemical vapor deposition (MOCVD) method, with germanium (Ge) single-chip 1 is the substrate end battery (p-Ge that grows successively, n-Ge) 2, nucleating layer (GaAs) 3, resilient coating (GaInAs) 4, barrier layer (n-GaInAs) 5, tunnel junction (n++AlGaAs, p++GaInAs) 6, barrier layer (p+GaInAs) 7, second junction battery (the p-GaInAs, n-GaInAs) 8, Window layer (n+AlGaInP/AlInAs) 9, the second tunnel junction (n++GaInAs, p++AlGaAs) 10, second barrier layer (p+GaInP), 11, the three junction batteries (p-GaInP, n-GaInP) 12, second Window layer (n+AlInP) 13, the 3rd tunnel junction (n++ZnSe, p++ZnSe) 14, the three barrier layers (n+ZnSe) 15, top battery (p-ZnSe, n-ZnSe) 16, the three Window layer (n+ZnSe) 17, ohmic contact layer (n+ZnSe) 18.After growth has the multijunction solar cell chip of ZnSe.Adopt conventional photoetching, plated film and scribing process to make solar cell.
A kind of four pn junction p n solar-energy photo-voltaic cell chips of the present invention, its key are to have increased one deck to have the ZnSe material of high energy gap as the top battery on existing multijunction solar cell chip material system.The ZnSe material appends to the absorption spectra scope that can expand solar battery chip on the existing multijunction solar cell chip material system as the top battery, effectively solve existing solar battery chip solar radiation is distributed in a large amount of problems that can streams can't fully absorb of visible light, ultraviolet band, improve the photoelectric conversion efficiency of multijunction solar cell chip.
Claims (2)
1. pn junction p n solar-energy photo-voltaic cell chip is characterized in that: with germanium (Ge) single-chip be substrate grow successively end battery (p-Ge, n-Ge), nucleating layer (GaAs), resilient coating (GaInAs) [4], barrier layer (n-GaInAs), tunnel junction (n++AlGaAs, p++GaInAs), barrier layer (p+GaInAs), and second junction battery (p-GaInAs, n-GaInAs), Window layer (n+AlGaInP/AlInAs), second tunnel junction (n++GaInAs, p++AlGaAs), second barrier layer (p+GaInP), the 3rd junction battery (p-GaInP, n-GaInP), second Window layer (n+AlInP), the 3rd tunnel junction (n++ZnSe, p++ZnSe), the 3rd barrier layer (n+ZnSe), and the top battery (p-ZnSe, n-ZnSe), the 3rd Window layer (n+ZnSe), ohmic contact layer (n+ZnSe).
2. a kind of four pn junction p n solar-energy photo-voltaic cell chips according to claim 1 is characterized in that: adopting the semiconductor monocrystal sheet is that substrate adopts metal organic chemical vapor deposition (MOCVD) or molecule to come extension (MBE) method growth multijunction solar cell chip.
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| CN 201010259999 CN101976690A (en) | 2010-08-23 | 2010-08-23 | Four-junction semiconductor solar photovoltaic cell chip |
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| CN 201010259999 CN101976690A (en) | 2010-08-23 | 2010-08-23 | Four-junction semiconductor solar photovoltaic cell chip |
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| CN 201010259999 Pending CN101976690A (en) | 2010-08-23 | 2010-08-23 | Four-junction semiconductor solar photovoltaic cell chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2610225C1 (en) * | 2015-11-18 | 2017-02-08 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Four-junction solar cell |
Citations (5)
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|---|---|---|---|---|
| CN1431721A (en) * | 2003-01-14 | 2003-07-23 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| CN101399296A (en) * | 2007-09-24 | 2009-04-01 | 昂科公司 | Thin inverted metamorphic multijunction solar cells with rigid support |
| US20090114274A1 (en) * | 2007-11-02 | 2009-05-07 | Fritzemeier Leslie G | Crystalline thin-film photovoltaic structures |
| CN101478015A (en) * | 2008-12-01 | 2009-07-08 | 苏州纳米技术与纳米仿生研究所 | Light splitting manufacturing process for four-junction solar cell system |
| CN101740647A (en) * | 2008-11-14 | 2010-06-16 | 安科太阳能公司 | Four junction inverted metamorphic multijunction solar cell with two metamorphic layers |
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2010
- 2010-08-23 CN CN 201010259999 patent/CN101976690A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1431721A (en) * | 2003-01-14 | 2003-07-23 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| CN101399296A (en) * | 2007-09-24 | 2009-04-01 | 昂科公司 | Thin inverted metamorphic multijunction solar cells with rigid support |
| US20090114274A1 (en) * | 2007-11-02 | 2009-05-07 | Fritzemeier Leslie G | Crystalline thin-film photovoltaic structures |
| CN101740647A (en) * | 2008-11-14 | 2010-06-16 | 安科太阳能公司 | Four junction inverted metamorphic multijunction solar cell with two metamorphic layers |
| CN101478015A (en) * | 2008-12-01 | 2009-07-08 | 苏州纳米技术与纳米仿生研究所 | Light splitting manufacturing process for four-junction solar cell system |
Non-Patent Citations (3)
| Title |
|---|
| 《Journal of Crystal Growth》 20041231 C.M. Fetzer等 High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE 第341-348页 第261卷, 2 * |
| 《Proceedings of the 2009 Spanish Conference on Electron Devices》 20090213 E. Barrigon等 GaInP/GaInAs/Ge triple junction solar cells for untra high concentration 第383-386页 , 2 * |
| 《太阳能学报》 20031031 李果华 等 《用于高效级联太阳电池的ZnSe材料研究》 第668-671页 第24卷, 第5期 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2610225C1 (en) * | 2015-11-18 | 2017-02-08 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Four-junction solar cell |
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Application publication date: 20110216 |