CN101814554A - Structural design method of film solar cell - Google Patents
Structural design method of film solar cell Download PDFInfo
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- CN101814554A CN101814554A CN 201010138886 CN201010138886A CN101814554A CN 101814554 A CN101814554 A CN 101814554A CN 201010138886 CN201010138886 CN 201010138886 CN 201010138886 A CN201010138886 A CN 201010138886A CN 101814554 A CN101814554 A CN 101814554A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a structural design method of a film solar cell, which comprises the structural design of microcrystalline, amorphous silicon film solar cells, CdTe/CdS and CIGS film solar cells and belongs to the field of solar cell device preparation. In the invention, aluminium foil is used as a back electrode and a substrate of the film solar cell, a transparent conductive film AZO(ZnO:Al) or FTO(SnO2:F) is adopted as a front surface electrode, a surface layer is packaged by adopting transparent resin, and the structure of a middle photovoltaic layer in current industrial production is not changed, thereby industrialized production can be realized without changing the process and the equipment in current production and without upgrading and rebuilding. The invention mainly solves the problems of high cost, incapability of bending, high transportation cost, friability and the like of the film solar cell in the current industrial production. The encountered bottleneck of the film solar cell in the current industrial production is solved by changing the back electrode, the front surface electrode and a packaging material.
Description
Technical field
The present invention relates to a kind of new construction of thin-film solar cells, particularly the various amorphous silicons of preparation, microcrystal silicon, polysilicon, thin-film solar cells such as CIS/CIGS, CdTe/CdS on flexible substrate.
Background technology
Solar energy is human inexhaustible regenerative resource.Also be clean energy resource, do not produce any environmental pollution.In the middle of effective utilization of solar energy; Big sun can solar photovoltaic utilization be a research field with fastest developing speed in the last few years, most active, is one of project that wherein attracts most attention.For this reason, people develop and have developed solar cell.All the time, high production cost is perplexing the manufacturing development of solar module.In order to improve output and to reduce cost, the novel thin film solar cell of these enterprise's production second generations, thin-film solar cells only accounts for 10% of whole solar cell market sales volumes at present, but is expected to reach about 40% after 10 years.Thin-film solar module is lower than former crystal silicon solar batteries cost, and weight is also lighter, thereby is subjected to extensive concern.
Common crystal silicon solar energy battery is to make on the high-quality silicon chip of thickness 350～450 μ m, and the sawing from the silicon ingot that lifts or cast of this silicon chip forms.Therefore the silicon materials of actual consumption are more.In order to save material, people just begin deposited polycrystalline silicon thin film on relatively inexpensive substrate from the mid-1970s, the preparation polycrystalline silicon thin film solar cell adopts chemical vapour deposition technique more at present, comprises low-pressure chemical vapor deposition (LPCVD) and plasma reinforced chemical vapour deposition (PECVD) technology.In addition, liquid phase epitaxial method (LPPE) and sputtering method also can be used to prepare polycrystalline silicon thin film solar cell.Chemical vapour deposition (CVD) mainly is with SiH
2Cl
2, SiHCl
3, SiCl
4Or SiH
4, be reacting gas, generate silicon atom and be deposited on the substrate of heating the industrial transparent conducting glass of generally selecting for use of backing material in reaction under the certain protection atmosphere.Two key issues of exploitation solar cell are exactly: improve conversion efficiency and reduce cost.Because the cost of amorphous silicon thin-film solar cell is low, be convenient to large-scale production, generally be subject to people's attention and developed rapidly, in fact as far back as the beginning of the seventies, just begun the development work to amorphous silicon battery, its development work had obtained developing rapidly in recent years.The structure of amorphous silicon thin-film solar cell is generally transparent conducting glass/p-Si/i-Si/n-Si/Al or Ag film, concrete preparation method is as follows, by preparation layer of transparent conductive films such as chemical vapour deposition (CVD), spray pyrolysis, sputtering technologies, composition is generally the SnO that F mixes on glass basis
2Or the ZnO of Al doping, deposit p-Si/i-Si/n-Si then respectively, deposit thick Al of the about 200nm of one deck or Ag film at last again as back electrode, concrete structure is as shown in Figure 1.At present, forming a lot of patents aspect crystallite, the amorphous silicon thin-film solar cell, the main version that all concentrates on silicon, unijunction, lamination, optimum preparation condition or the like, for example, the crystal silicon solar energy battery (CN200610153054.7) that people such as Xu Dong, Li Hailing, Xu Ying disclose a kind of new construction is encouraged by Beijing Solar Energy Inst. Co., Ltd., its main points are to form PN heterojunction at n type single crystal silicon substrate back deposition one deck silicon thin film, replace the PN homojunction of conventional diffusion method, improve transformation efficiency in the battery front side preparation.
As a kind of very important thin-film material, the energy gap of CdTe is 1.45eV, and its forbidden band is wide very near the desirable energy gap of photovoltaic material, and it is the direct band gap material, have the very high absorption coefficient of light, the theoretical transformation efficient of CdTe solar cell is about 29%.Though homojunction n-CdTe/p-CdTe also can make solar cell, but conversion efficiency is very low, be generally less than 10%, its reason is that the absorption coefficient of light of CdTe is very high, most of light just has been absorbed in battery surface 1-2 μ m and inspires electronics and the hole is right, but these minority carriers are almost just fallen by compound on the surface, promptly form " dead band " on the surface of battery, thereby cause its conversion efficiency low.For fear of this phenomenon, generally be at superficial growth one deck " window material " CdS of CdTe film.CdS is a semiconductor material with wide forbidden band, and band gap is 2.42eV, with CdTe relative lattice preferably, chemistry and thermal expansion matching is arranged.At present, the high conversion efficiency of CdTe/CdS solar cell is 16.7% in the laboratory, also has no small gap apart from its theoretical transformation efficient.The structure of CdTe/CdS solar cell is generally transparent conducting glass/CdS/CdTe/ metallic film back electrode, as shown in Figure 2.South China Science ﹠ Engineering University Yao Ruo river, Zheng Xueren disclose a kind of thin-film solar cells and preparation method thereof (CN1547260), its primary structure is still identical with said structure, just on the basis of original CdS/CdTe film, deposit p type, n type silicon again, improve transformation efficiency.
In order to seek the substitute of monocrystalline silicon battery, people constantly develop the solar cell of other material again except that having developed polysilicon, amorphous silicon thin-film solar cell.Comprise mainly that wherein GaAs III-V compounds of group, cadmium sulfide, cadmium sulfide and copper plugs with molten metal selenium hull cell etc.In the above-mentioned battery, although the efficient of cadmium sulfide, cadmium telluride polycrystal film battery is than amorphous silicon thin-film solar cell efficient height, cost is low than monocrystalline silicon battery, and also be easy to large-scale production, but because cadmium has severe toxicity, can cause serious pollution to environment, therefore, being not that crystal silicon solar energy battery is optimal substitutes.GaAs III-V compound and copper, indium and selenium film battery are owing to have the generally attention that high conversion rate is subjected to people.Copper indium diselenide CuInSe
2Be called for short CIS.The CIS material can reduce to 1.1eV, be suitable for the opto-electronic conversion of sunlight, in addition, there is not photic decline problem in the CIS thin film solar cell.Therefore, CIS has also caused gazing at of people as high conversion efficiency thin-film solar cells material.CIS is as the semi-conducting material of solar cell, have cheap, functional and advantage such as technology is simple, to become an important directions of Future Development solar cell, for example the Tsing-Hua University village bright greatly, draw a bow, Fang Ling, Yang Bo etc. disclose a kind of copper-indium-galliun-selenium film solar cell and preparation method thereof (CN1367536), its structure is normally at deposition on glass one deck Mo or Mo-Cu film, be CIS or Cu (InGa) Se2 (CIGS) then, deposit CdS and i-ZnO again, be the transparent conductive film electrode at last, as shown in Figure 3.
Can know that by above description and patent documentation the structure of current thin film solar cell mainly is to be matrix with glass, table electrode before transparent conductive film is done, aluminium that the 200nm left and right sides is thick or silver-colored film are done back electrode, and the centre is the battery layers of core.Both need glass to do matrix, and needed aluminium or silver-colored film to do back electrode again.Therefore, traditional thin-film solar cells cost is higher, and glass can not be crooked as matrix, cost of transportation height, a lot of unfavorable factors such as easy fragmentation.Therefore, development novel thin film solar battery structure seems particularly important.
Summary of the invention
The present invention proposes to adopt matrix and the back electrode of aluminium foil as thin-film solar cells, and preceding table electrode adopts transparent conductive film AZO (ZnO:Al) or FTO (SnO
2: F), the transparent resin encapsulation is adopted on the top layer, does not change the structure of original middle photovoltaic layer, thereby does not need to change present industrial technology and equipment.
Realize that preparation method of the present invention is as follows:
Used thickness of the present invention is from 100 microns to 1 millimeter the aluminium foil matrix as thin-film solar cells, the surface is put into vacuum chamber and is coated with photovoltaic layer after cleaning, and then the transparent conductive film that deposits 200 nanometers adopts the transparent resin encapsulation at last as preceding table electrode.
Another technical scheme of the present invention is that to adopt thickness be one of the AZO of 200-300nm or FTO film to above-mentioned preceding table electrode.
Another technical scheme of the present invention is that described photovoltaic layer is one of crystallite, amorphous silicon, CdTe/CdS or CIGS on being.
Another technical scheme of the present invention is that above-mentioned transparent epoxy resin is the ethylene-vinyl acetate copolymer of the thickness 0.3-1.0mm that is.
Advantage of the present invention
The present invention mainly solves present industrial thin-film solar cells cost height, can not be crooked, problems such as frangible, cost of transportation height, by using aluminium foil, both solved frangible problem, reduce the preparation process of aluminum back electrode again, thereby solved the bottleneck that is run into of current industrial production thin-film solar cells.
Description of drawings:
Silicon-based film solar cells structure during Fig. 1 current industrial is used
CdTe/CdS film solar battery structure during Fig. 2 current industrial is used
CIS/CIGS film solar battery structure during Fig. 3 current industrial is used
The film solar battery structure of Fig. 4 embodiment 1 design
The film solar battery structure of Fig. 5 embodiment 2 designs
The film solar battery structure of Fig. 6 embodiment 3 designs
Embodiment
The present invention will be further described in conjunction with the accompanying drawings.
Embodiment 1
As shown in Figure 4, used thickness is that 100 microns aluminium foil is as the matrix of thin-film solar cells, the surface is put into vacuum chamber and is coated with the silica-based photovoltaic layer of p-Si/i-Si/n-Si after cleaning, and then the transparent conductive film AZO (ZnO:Al) that deposits 200 nanometer thickness is as preceding table electrode, adopt at last that thickness is the 0.3-1.0mm transparent epoxy resin---ethylene-vinyl acetate copolymer encapsulates as encapsulated layer.
Embodiment 2
As shown in Figure 5, used thickness is the matrixes of 300 micron aluminum foils as thin-film solar cells, the surface is put into vacuum chamber and is coated with the CdTe photovoltaic layer after cleaning, prepare the CdS Window layer then, the transparent conductive film AZO (ZnO:Al) that deposits 200 nanometer thickness afterwards again is as preceding table electrode, adopt at last that thickness is the 0.3-1.0mm transparent epoxy resin---ethylene-vinyl acetate copolymer encapsulates as encapsulated layer.
Embodiment 3
As shown in Figure 6, used thickness is the matrix of 1 millimeter aluminium foil as thin-film solar cells, vacuum chamber deposition one deck Mo film is put on the surface after cleaning, be CIS or CIGS then, deposit CdS and i-ZnO again, the transparent conductive film AZO (ZnO:Al) that deposits 200 nanometer thickness at last is as preceding table electrode, adopt at last that thickness is the 0.3-1.0mm transparent epoxy resin---ethylene-vinyl acetate copolymer encapsulates as encapsulated layer.
Claims (4)
1. the construction design method of a thin-film solar cells, the aluminium foil that its feature used thickness is 100 microns to 1 millimeter is as the matrix of thin-film solar cells, the surface is put into vacuum chamber and is coated with photovoltaic layer after cleaning, and then the transparent conductive film that deposits 200 nanometers adopts the transparent resin encapsulation at last as preceding table electrode.
2. the construction design method of a kind of thin-film solar cells as claimed in claim 1 is characterized in that, one of the AZO that described preceding table electrode employing thickness is 200-300nm or FTO film.
3. the construction design method of a kind of thin-film solar cells as claimed in claim 1 is characterized in that described photovoltaic layer is one of crystallite, amorphous silicon, CdTe/CdS or CIGS.
4. the construction design method of a kind of thin-film solar cells as claimed in claim 1 is characterized in that,
Described transparent epoxy resin is the ethylene-vinyl acetate copolymer of the thickness 0.3-1.0mm that is.
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| CN 201010138886 CN101814554A (en) | 2010-03-31 | 2010-03-31 | Structural design method of film solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270670A (en) * | 2011-07-15 | 2011-12-07 | 河北汉盛光电科技有限公司 | Silicon-based thin-film solar battery |
| CN102476694A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Electric bicycle with transparent thin-film solar panel |
| CN102587545A (en) * | 2011-01-11 | 2012-07-18 | 上海泰莱钢结构工程有限公司 | Photovoltaic building glass curtain wall component |
| CN102842629A (en) * | 2011-06-21 | 2012-12-26 | 张国生 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201069776Y (en) * | 2007-06-13 | 2008-06-04 | 上海银翊龙投资管理咨询有限公司 | Thin film solar battery |
| CN101286537A (en) * | 2007-04-09 | 2008-10-15 | 信越化学工业株式会社 | Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar |
| CN201408768Y (en) * | 2009-05-18 | 2010-02-17 | 王小牛 | Concentrating solar cell module |
-
2010
- 2010-03-31 CN CN 201010138886 patent/CN101814554A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286537A (en) * | 2007-04-09 | 2008-10-15 | 信越化学工业株式会社 | Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar |
| CN201069776Y (en) * | 2007-06-13 | 2008-06-04 | 上海银翊龙投资管理咨询有限公司 | Thin film solar battery |
| CN201408768Y (en) * | 2009-05-18 | 2010-02-17 | 王小牛 | Concentrating solar cell module |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102476694A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Electric bicycle with transparent thin-film solar panel |
| CN102587545A (en) * | 2011-01-11 | 2012-07-18 | 上海泰莱钢结构工程有限公司 | Photovoltaic building glass curtain wall component |
| CN102842629A (en) * | 2011-06-21 | 2012-12-26 | 张国生 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
| CN102270670A (en) * | 2011-07-15 | 2011-12-07 | 河北汉盛光电科技有限公司 | Silicon-based thin-film solar battery |
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Open date: 20100825 |