CN201956362U - Five-junction compound semiconductor solar energy photovoltaic battery chip - Google Patents
Five-junction compound semiconductor solar energy photovoltaic battery chip Download PDFInfo
- Publication number
- CN201956362U CN201956362U CN 201020502435 CN201020502435U CN201956362U CN 201956362 U CN201956362 U CN 201956362U CN 201020502435 CN201020502435 CN 201020502435 CN 201020502435 U CN201020502435 U CN 201020502435U CN 201956362 U CN201956362 U CN 201956362U
- Authority
- CN
- China
- Prior art keywords
- alpsb
- znsse
- gainas
- junction
- battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a five-junction compound semiconductor solar energy photovoltaic battery chip, which takes a germanium single wafer (1) as the substrate to grow a battery p-Ge/n-Ge (2), a nucleating layer GaAs (3), a buffer layer GaInAs (4), a first barrier layer n-GaInAs (5), a first tunnel junction n++AlGaAs/p++GaInAs (6), a second barrier layer p+GaInAs (7), a second junction battery p-GaInAs/n-GaInAs (8), a first window layer n+AlGaInP/AlInAs (9), a second tunnel junction n++GaInAs/p++AlGaAs (10), a third barrier layer p+GaInP (11), a third junction battery p-GaInP/n-GaInP (12), a second window layer n+AlPSb (13), a third tunnel junction n++AlPSb/p++AlPSb (14), a fourth barrier layer n+AlPSb (15), a fourth junction battery p-AlPSb/n-AlPSb (16), a third window layer n+AlPSb (17), a fourth tunnel junction n++ZnSSe/p++ZnSSe (18), a fifth barrier layer n+ZnSSe (19), a top battery p-ZnSSe/n-ZnSSe (20), a fourth window layer n+ZnSSe (21) and an ohmic contact layer n+ZnSSe (22) in sequence. The five-junction compound semiconductor solar energy photovoltaic battery chip effectively solves the problem that the existing solar energy battery chip can not fully absorb a mass of energy flow distributed in the visible light band and the ultraviolet band by solar radiation, thereby improving the photoelectric conversion efficiency of a multi-junction solar battery.
Description
Technical field
The utility model relates to a kind of solar-energy photo-voltaic cell chip structure, relates in particular to a kind of five knot compound semiconductor solar-energy photo-voltaic cell chip structures, belongs to field of semiconductor photoelectron technique.
Background technology
When non-renewable energy resources such as electric power, coal, oil signal for help repeatedly, when energy problem became the bottleneck of restriction international community economic development day by day, solar energy was subjected to special concern with the characteristic of its inexhaustible, nexhaustible and zero pollution.In the long run; utility model along with the improvement of solar cell manufacturing technology and new light-electrical switching device; in conjunction with various countries to the protection of environment with to the great demand of regeneration clean energy resource; solar cell will be the most practicable approach of human use's solar radiant energy, and it is for utilizing solar energy to open vast vistas on a large scale human future.At present, the application of solar cell has entered departments such as industry, commerce, agricultural, communication, household electrical appliance and public utility from military field, space industry, especially can be dispersedly in the outlying district, high mountain, desert, island and rural area use, the transmission line that involves great expense with saving.
But, existing solar cell photoelectric conversion efficiency is relatively low have been restricted it and further has been widely used in real work, the life, this owing to solar radiant energy stream asymmetric distribution in being peak value with the 500nm wavelength around, from ultraviolet 200nm wave band to far infrared 2600nm wave band than in the wide spectral range, particularly in China Tibet, the contour height above sea level in Xinjiang or high latitude area, solar irradiation can flow and concentrate on short-wavelength visible light and ultraviolet light wave band part especially in a large number.And top battery energy gap is limited in about 1.9ev in the present multijunction solar cell chip, corresponding absorbing wavelength is about 650nm, long-range after this absorbing wavelength when the shortwave subwave, absorption efficiency descends and to cause being positioned in the solar radiant energy stream the big energy that visible light and ultraviolet band inside comprises and fail to obtain effective absorption, utilization.Therefore how to improve solar battery chip the energy absorption that obtains as yet in sun visible light, the ultraviolet spectra to make full use of is become the existing solar cell photoelectric conversion efficiency of raising, promotion, high performance solar batteries development, and then promote this green energy resource to be able to the key of extensive use.
Summary of the invention
In order to expand the absorption spectra scope of solar battery chip, fully absorb a large amount of energy streams that solar radiation is distributed in visible light and ultraviolet band, improve the photoelectric conversion efficiency of solar cell, the utility model provide a kind of with the ZnSSe material as the top battery, the AlPSb material is tied compound semiconductor solar-energy photo-voltaic cell chip structures as five of inferior top battery of next-door neighbour's top battery below.
The purpose of this utility model is to be realized by following technical scheme:
With germanium (Ge) single-chip 1 is the substrate end cell p-Ge that grows successively, n-Ge2, nucleating layer GaAs3, resilient coating GaInAs4, the first barrier layer n-GaInAs5, the first tunnel junction n++AlGaAs, p++GaInAs6, the second barrier layer p+GaInAs7, the second junction battery p-GaInAs, n-GaInAs8, the first Window layer n+AlGaInP/AlInAs9, the second tunnel junction n++GaInAs, p++AlGaAs10, the 3rd barrier layer p+GaInP11, the 3rd junction battery p-GaInP, n-GaInP12, the second Window layer n+AlPSb13, the 3rd tunnel junction n++AlPSb, p++AlPSb14, the 4th barrier layer n+AlPSb15, the 4th junction battery p-AlPSb, n-AlPSb16, the 3rd Window layer n+AlPSb17, the 4th tunnel junction n++ZnSSe, p++ZnSSe18, the 5th barrier layer n+ZnSSe19, top cell p-ZnSSe, n-ZnSSe20, the 4th Window layer n+ZnSSe21, ohmic contact layer n+ZnSSe22.
The disclosed five knot compound semiconductor solar-energy photo-voltaic cells of the utility model, adopting the semiconductor monocrystal sheet is substrate, adopts metal organic chemical vapor deposition MOCVD or molecular beam epitaxy MBE method growth multijunction solar cell chip.
The utility model can obtain following beneficial effect:
On existing Ge/GaInAs/InGaP three-joint solar cell epitaxial material system, increase AlPSb top battery of growth acquisition and ZnSSe material top battery, fully absorb a large amount of energy streams that solar radiation is distributed in visible light and ultraviolet band, improve the photoelectric conversion efficiency of solar cell.
Description of drawings
Fig. 1 five knot compound semiconductor solar-energy photo-voltaic cell schematic diagrames.
Among the figure: 1, single germanium wafer, 2, end cell p-Ge, n-Ge, 3, nucleating layer GaAs, 4, resilient coating GaInAs, 5, the first barrier layer n-GaInAs, 6, the first tunnel junction n++AlGaAs, p++GaInAs6,7, the second barrier layer p+GaInAs, 8, the second junction battery p-GaInAs, n-GaInAs, 9, the first Window layer n+AlGaInP/AlInAs, 10, the second tunnel junction n++GaInAs, p++AlGaAs, 11, the 3rd barrier layer p+GaInP, 12, the 3rd junction battery p-GaInP, n-GaInP, 13, the second Window layer n+AlPSb, 14, the 3rd tunnel junction n++AlPSb, p++AlPSb, 15, the 4th barrier layer n+AlPSb, 16, the 4th junction battery p-AlPSb, n-AlPSb, 17, the 3rd Window layer n+AlPSb, 18, the 4th tunnel junction n++ZnSSe, p++ZnSSe, 19, the 5th barrier layer n+ZnSSe, 20, top cell p-ZnSSe, n-ZnSSe, 21, the 4th Window layer n+ZnSSe, 22, ohmic contact layer n+ZnSSe.
Embodiment
In order to further specify structure of the present utility model and feature, the utility model is further described below in conjunction with embodiment and accompanying drawing.As shown in Figure 1, five knot compound semiconductor solar-energy photo-voltaic cells adopt metal organic chemical vapor deposition (MOCVD) method, with germanium (Ge) single-chip 1 is the substrate end cell p-Ge that grows successively, n-Ge2, nucleating layer GaAs3, resilient coating GaInAs4, the first barrier layer n-GaInAs5, the first tunnel junction n++AlGaAs, p++GaInAs6, the second barrier layer p+GaInAs7, the second junction battery p-GaInAs, n-GaInAs8, the first Window layer n+AlGaInP/AlInAs9, the second tunnel junction n++GaInAs, p++AlGaAs10, the 3rd barrier layer p+GaInP11, the 3rd junction battery p-GaInP, n-GaInP12, the second Window layer n+AlPSb13, the 3rd tunnel junction n++AlPSb, p++AlPSb14, the 4th barrier layer n+AlPSb15, the 4th junction battery p-AlPSb, n-AlPSb16, the 3rd Window layer n+AlPSb17, the 4th tunnel junction n++ZnSSe, p++ZnSSe18, the 5th barrier layer n+ZnSSe19, top cell p-ZnSSe, n-ZnSSe20, the 4th Window layer n+ZnSSe21, ohmic contact layer n+ZnSSe22.After growth has the five connection solar cell chips of AlPSb and ZnSSe, adopt conventional photoetching, plated film and scribing process to make solar cell chip.
The utility model five knot compound semiconductor solar-energy photo-voltaic cell chips, its key is to have increased the ZnSSe material top battery with high energy gap on existing Ge/GaInAs/InGaP three-joint solar cell chip material system, AlPSb material time top battery, realize the expansion of the absorption spectra scope of solar battery chip, effectively solve existing solar battery chip solar radiation is distributed in a large amount of problems that can streams can't fully absorb of visible light and ultraviolet band, improve the photoelectric conversion efficiency of multijunction solar cell chip.
Claims (1)
1. tie compound semiconductor solar-energy photo-voltaic cell chip for one kind five, it is characterized in that: with single germanium wafer (1) is the substrate end cell p-Ge that grows successively, n-Ge (2), nucleating layer GaAs (3), resilient coating GaInAs (4), the first barrier layer n-GaInAs (5), the first tunnel junction n++AlGaAs, p++GaInAs (6), the second barrier layer p+GaInAs (7), the second junction battery p-GaInAs, n-GaInAs (8), the first Window layer n+AlGaInP/AlInAs (9), the second tunnel junction n++GaInAs, p++AlGaAs (10), the 3rd barrier layer p+GaInP (11), the 3rd junction battery p-GaInP, n-GaInP (12), the second Window layer n+AlPSb (13), the 3rd tunnel junction n++AlPSb, p++AlPSb (14), the 4th barrier layer n+AlPSb (15), the 4th junction battery p-AlPSb, n-AlPSb (16), the 3rd Window layer n+AlPSb (17), the 4th tunnel junction n++ZnSSe, p++ZnSSe (18), the 5th barrier layer n+ZnSSe (19), top cell p-ZnSSe, n-ZnSSe (20), the 4th Window layer n+ZnSSe (21), ohmic contact layer n+ZnSSe (22).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020502435 CN201956362U (en) | 2010-08-23 | 2010-08-23 | Five-junction compound semiconductor solar energy photovoltaic battery chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020502435 CN201956362U (en) | 2010-08-23 | 2010-08-23 | Five-junction compound semiconductor solar energy photovoltaic battery chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201956362U true CN201956362U (en) | 2011-08-31 |
Family
ID=44500464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020502435 Expired - Lifetime CN201956362U (en) | 2010-08-23 | 2010-08-23 | Five-junction compound semiconductor solar energy photovoltaic battery chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201956362U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976691A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Five-knot compound semiconductor solar photovoltaic cell chip |
-
2010
- 2010-08-23 CN CN 201020502435 patent/CN201956362U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976691A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | Five-knot compound semiconductor solar photovoltaic cell chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101859813B (en) | Method for manufacturing quadri-junction GaInP/GaAs/InGaAs/Ge solar cells | |
| CN101950774A (en) | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery | |
| CN105355680A (en) | Crystal lattice matching six-junction solar energy cell | |
| CN102683468A (en) | Emitter structure of crystal silicon heterojunction solar battery | |
| CN101859814B (en) | Method for growing InGaP/GaAs/Ge three-junction solar cell on silicon substrate | |
| CN102790116B (en) | Upside-down mounting GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof | |
| CN102790117B (en) | GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof | |
| CN201936889U (en) | Four-junction solar photovoltaic cell chip for compound semiconductor | |
| CN101976689B (en) | Five-junction semiconductor solar photovoltaic cell chip | |
| CN101431117A (en) | Multi-junction solar cell with doping blocking layer | |
| CN101980367B (en) | Four-junction solar photovoltaic cell chip for compound semiconductor | |
| CN103000740B (en) | GaAs/GaInP double-junction solar battery and preparation method thereof | |
| CN102790119B (en) | GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof | |
| CN204315612U (en) | Double-sided growth four-junction solar cell with quantum structure | |
| CN201956362U (en) | Five-junction compound semiconductor solar energy photovoltaic battery chip | |
| CN102339889A (en) | Double-junction serial InGaAs/InGaAsP (indium gallium arsenium/indium gallium arsenium phosphorus) double-end solar cell and manufacturing method thereof | |
| CN102437227A (en) | Multi-junction solar cell containing InAs quantum dot structure | |
| CN205194710U (en) | Four knot solar cell with reflection stratum | |
| CN101814554A (en) | Structural design method of film solar cell | |
| CN101976691B (en) | Five-knot compound semiconductor solar photovoltaic cell chip | |
| CN104916725A (en) | Three-junction laminated solar cell and manufacturing method thereof | |
| CN102130206A (en) | Method for manufacturing silicon-doped indium arsenide/gallium arsenide quantum-dot solar cell | |
| CN101908581B (en) | Method for manufacturing indium arsenide quantum dot solar battery with gallium aluminum phosphide stress compensation | |
| CN205385027U (en) | Five knot solar cell that contain DBR structure | |
| CN205385028U (en) | Six knot solar cell of lattice match |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20110831 Effective date of abandoning: 20130306 |
|
| RGAV | Abandon patent right to avoid regrant |