CN201936889U

CN201936889U - Four-junction solar photovoltaic cell chip for compound semiconductor

Info

Publication number: CN201936889U
Application number: CN 201020502446
Authority: CN
Inventors: 王智勇; 李建军; 尧舜
Original assignee: Beijing University of Technology
Current assignee: Beijing University of Technology
Priority date: 2010-08-23
Filing date: 2010-08-23
Publication date: 2011-08-17
Anticipated expiration: 2020-08-23

Abstract

The utility model relates to a four-junction solar photovoltaic cell chip for a compound semiconductor. By taking a single Ge wafer as the substrate, a bottom cell, a nucleating layer made from GaAs, a buffer layer made from GaInAs, a barrier layer I made from n-GaInAs, a tunnel junction made from n++AlGaAs and p+GaInAs, a barrier layer II made from p+GaInAs, a second battery, a window layer made from n+AlGaInP/AlInAs, a second tunnel junction made from n++GaInAs and p++AlGaAs, a second barrier layer made from p+GaInP, a third battery chip made from p-GaInP and n-GaInP, a second window layer made from n+AlInP, a third tunnel junction made from n++AlInAs and p++AlInAs, a third barrier layer made from n+AlInAs, a top cell chip made from p-AlInAs and n-AlInAs, a third window layer made from n+AlInAs, and an ohmic contact layer made from n+AlInAs, all grow on the substrate respectively in sequence. The four-junction solar photovoltaic cell chip effectively solves the problem that lots of solar energy stream distributed at the ultraviolet band fails to be fully absorbed by the conventional solar cell chip, and improves the photoelectric conversion efficiency of a multi-junction solar cell chip.

Description

A kind of four knot compound semiconductor solar-energy photo-voltaic cell chips

Technical field

The utility model relates to a kind of four knot compound semiconductor solar-energy photo-voltaic cell chip structures, belongs to field of semiconductor photoelectron technique.

Background technology

When non-renewable energy resources such as electric power, coal, oil signal for help repeatedly, when energy problem became the bottleneck of restriction international community economic development day by day, solar energy was subjected to special concern with the characteristic of its inexhaustible, nexhaustible and zero pollution.More and more countries comes into effect " sunlight program ", develops solar energy resources, seeks the new power of economic development.In the long run; utility model along with the improvement of solar battery chip manufacturing technology and new light one electrical switching device; in conjunction with various countries to the protection of environment with to the great demand of regeneration clean energy resource; solar battery chip will be the most practicable method of human use's solar radiant energy, for utilizing solar energy to open vast vistas on a large scale human future.At present, can predict the important seat that solar energy power generating can occupy world energy sources consumption in the near future, not only will substitute the part conventional energy resource, and will become the main body of world energy supplies.

But, existing solar battery chip photoelectric conversion efficiency is relatively low have been restricted it and further has been widely used in real work, the life, this owing to solar radiant energy stream asymmetric distribution in being peak value with the 500nm wavelength around, from ultraviolet 200nm wave band to far infrared 2600nm wave band than in the wide spectral range, particularly in China Tibet, the contour height above sea level in Xinjiang or high latitude area, solar irradiation can flow and concentrate on short-wavelength visible light and ultraviolet light wave band part especially in a large number.And top battery chip energy gap is limited in about 1.9ev in the present multijunction solar cell microarray biochip, corresponding absorbing wavelength is about 650nm, long-range after this absorbing wavelength when the shortwave subwave, absorption efficiency descends and to cause being positioned in the solar radiant energy stream the big energy that visible light and ultraviolet band inside comprises and fail to obtain effective absorption, utilization.Therefore how to improve the solar battery chip chip energy absorption that obtains as yet in sun visible light, the ultraviolet spectra to make full use of is become the existing solar battery chip photoelectric conversion efficiency of raising, promote novel, high performance solar batteries chip development, and then promote this new green power to be able to the key of extensive use.

Summary of the invention

The purpose of this utility model is: provide a kind of with the absorption spectra scope of AlInAs material as the multijunction solar cell chip expansion solar battery chip chip of top battery chip, fully absorb a large amount of energy streams that solar radiation is distributed in visible light, ultraviolet band, improve the photoelectric conversion efficiency of solar battery chip.

The purpose of this utility model is to be realized by following technical scheme:

A kind of four knot compound semiconductor solar-energy photo-voltaic cell chips, with germanium Ge single-chip is the substrate end battery of growing successively, the nucleating layer that GaAs constitutes, the resilient coating that GaInAs constitutes, the barrier layer I that n-GaInAs constitutes, the tunnel junction that n++AlGaAs and p++GaInAs constitute, the barrier layer II that p+GaInAs constitutes, second junction battery, the Window layer that n+AlGaInP/AlInAs constitutes, second tunnel junction that n++GaInAs and p++AlGaAs constitute, second barrier layer that p+GaInP constitutes, by p-GaInP and n-GaInP the 3rd junction battery chip, second Window layer that constitutes by n+AlInP, the 3rd tunnel junction that constitutes by n++AlInAs and p++AlInAs, the 3rd barrier layer that constitutes by n+AlInAs, the top battery chip that constitutes by p-AlInAs and n-AlInAs, the 3rd Window layer that constitutes by n+AlInAs, the ohmic contact layer that constitutes by n+AlInAs.

The utility model four knot compound semiconductor solar-energy photo-voltaic cell chips, adopting the semiconductor monocrystal sheet is that substrate adopts metal organic chemical vapor deposition or molecular beam epitaxial method growth multijunction solar cell microarray biochip.

The utility model increases growth and obtains AlInAs top battery chip on existing multijunction solar cell chip epitaxial material system, can expand the absorption spectra scope of solar battery chip chip, effectively solve existing solar battery chip chip solar radiation is distributed in a large amount of problems that can streams can't fully absorb of ultraviolet band, improve the photoelectric conversion efficiency of multijunction solar cell chip.

Description of drawings

A kind of four knot compound semiconductor solar-energy photo-voltaic cell chip schematic diagrames of Fig. 1.

Among the figure: 1, germanium Ge single-chip, 2, end battery, 3, nucleating layer, 4, resilient coating, 5, barrier layer I, 6, tunnel junction, 7, barrier layer II, 8, second junction battery, 9, Window layer, 10, second tunnel junction, 11, second barrier layer, the 12, the 3rd junction battery, 13, second Window layer, the 14, the 3rd tunnel junction, the 15, the 3rd barrier layer, 16, top battery, the 17, the 3rd Window layer, 18, ohmic contact layer.

Embodiment

In order to further specify structure of the present utility model and feature, the utility model is further described below in conjunction with embodiment and accompanying drawing.As shown in Figure 1, four knot compound semiconductor solar-energy photo-voltaic cell chips adopt metal organic chemical vapor deposition (MOCVD) method, with germanium Ge single-chip 1 is the substrate end battery chip (p-Ge that grows successively, n-Ge) 2, nucleating layer (GaAs) 3, resilient coating (GaInAs) 4, barrier layer I (n-GaInAs) 5, tunnel junction (n++AlGaAs, p++GaInAs) 6, barrier layer II (p+GaInAs) 7, second junction battery (the p-GaInAs, n-GaInAs) 8, Window layer (n+AlGaInP/AlInAs) 9, the second tunnel junction (n++GaInAs, p++AlGaAs) 10, second barrier layer (p+GaInP), 11, the three junction batteries (p-GaInP, n-GaInP) 12, second Window layer (n+AlInP) 13, the 3rd tunnel junction (n++AlInAs, p++AlInAs) 14, the three barrier layers (n+AlInAs) 15, top battery (p-AlInAs, n-AlInAs) 16, the three Window layer (n+AlInAs) 17, ohmic contact layer (n+AlInAs) 18.After growth has the multijunction solar cell microarray biochip of AlInAs.Adopt conventional photoetching, plated film and scribing process to make the solar cell chip chip.

The utility model four knot compound semiconductor solar-energy photo-voltaic cell chips, its key is to have increased one deck to have the AlInAs material of high energy gap as the top battery chip on existing multijunction solar cell chip material system.The AlInAs material appends to the absorption spectra scope that can expand the solar battery chip chip on the existing multijunction solar cell chip material system as the top battery chip, effectively solve existing solar battery chip chip solar radiation is distributed in a large amount of problems that can streams can't fully absorb of visible light, ultraviolet band, improve the photoelectric conversion efficiency of multijunction solar cell chip.

Claims

1. tie compound semiconductor solar-energy photo-voltaic cell chip for one kind four, it is characterized in that: with germanium Ge single-chip is the substrate end battery of growing successively, the nucleating layer that GaAs constitutes, the resilient coating that GaInAs constitutes, the barrier layer I that n-GaInAs constitutes, the tunnel junction that n++AlGaAs and p++GaInAs constitute, the barrier layer II that p+GaInAs constitutes, second junction battery, the Window layer that n+AlGaInP/AlInAs constitutes, second tunnel junction that n++GaInAs and p++AlGaAs constitute, second barrier layer that p+GaInP constitutes, by p-GaInP and n-GaInP the 3rd junction battery chip, second Window layer that constitutes by n+AlInP, the 3rd tunnel junction that constitutes by n++AlInAs and p++AlInAs, the 3rd barrier layer that constitutes by n+AlInAs, the top battery chip that constitutes by p-AlInAs and n-AlInAs, the 3rd Window layer that constitutes by n+AlInAs, the ohmic contact layer that constitutes by n+AlInAs.

2. a kind of four knot compound semiconductor solar-energy photo-voltaic cell chips according to claim 1 is characterized in that: adopting the semiconductor monocrystal sheet is that substrate adopts metal organic chemical vapor deposition or molecular beam epitaxial method growth multijunction solar cell microarray biochip.