CN101431117A - Multi-junction solar cell with doping blocking layer - Google Patents
Multi-junction solar cell with doping blocking layer Download PDFInfo
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- CN101431117A CN101431117A CNA2008101800780A CN200810180078A CN101431117A CN 101431117 A CN101431117 A CN 101431117A CN A2008101800780 A CNA2008101800780 A CN A2008101800780A CN 200810180078 A CN200810180078 A CN 200810180078A CN 101431117 A CN101431117 A CN 101431117A
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- solar cell
- blocking layer
- multijunction solar
- doping blocking
- tunnel junction
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a multijunction solar battery provided with adulterating barrier layers, and is sued for a high efficiency photospot solar energy generation system. The multijunction solar battery is characterized in that a semiconductor single crystal plate is adopted as a underlay; a metal organic chemical vapor deposition (MOCVD) or a molecular beam epitaxy (MBE) method is adopted to grow multijunction solar battery materials; the adulterating barrier layers having the same conductivity are respectively grown on both sides of a tunnel junction connecting two junction batteries and can effectively prevent dulterating impurities having high concentrations of the tunnel junction from spreading outwards; the conversion efficiency of the solar battery is enhanced; and the service life of the solar battery is prolonged.
Description
Technical field
The invention provides a kind of multijunction solar cell with doping blocking layer.
Background technology
Serious day by day along with energy shortage of fossil class and environmental pollution, the utilization of regenerative resource causes the attention of national governments.Solar energy is subjected to special concern with the characteristic of its inexhaustible, nexhaustible and zero pollution.Utilize solar power generation to have a very big obstacle, because it is too low to arrive ground solar energy density, its peak value is only about one kilowatt every square metre.Utilize condenser can improve solar energy density effectively.By concentrator larger area sunlight is converged in and form " focal spot " in the small range, and solar cell placed on this " focal spot " or " burnt band ", to increase light intensity, overcome the low defective of solar radiation energy-flux density, thereby obtain more electric energy output.As seen concentrator solar cell is to improve conversion efficiency, reduces a kind of effective measures of solar cell energy cost of electricity-generating.
But along with the increase of optically focused ratio, the optical power density that shines battery surface increases, and the temperature of battery is increased.Therefore, be used for the multijunction solar cell of concentrating solar power generation system, the impurity that must prevent the doping of tunnel junction middle and high concentration has high conversion rate to outdiffusion to guarantee solar cell, and has working life steady in a long-term.Thereby reduce the cost of concentration solar generating, improve the reliability and the useful life at concentration solar generating station, help applying of concentrator solar cell.
A kind of multijunction solar cell of the present invention with doping blocking layer, its key is the doping blocking layer of same conductivity of growing respectively in the tunnel junction both sides that connect two junction batteries, the lattice constant on barrier layer is close with the lattice constant of tunnel junction, and the bandwidth on barrier layer is greater than the bandwidth on barrier layer.This doping blocking layer has two kinds of functions, and the one, the impurity of tunnel junction that stops high-concentration dopant is to outdiffusion; Next is with the carrier confinement of tunnel junction within it, makes the transoid tunnel junction be similar to ohmic contact, reduces the series resistance of multijunction solar cell, improves the conversion efficiency and the fill factor, curve factor of solar cell.
Summary of the invention
The objective of the invention is to: a kind of multijunction solar cell with doping blocking layer is provided, can make solar cell under the situation of high power concentrator, have stable photoelectric conversion efficiency, and the assurance concentrator solar cell can stably be worked in the high power concentrator environment midium or long term.
The objective of the invention is to realize by following technical scheme:
A kind of multijunction solar cell with doping blocking layer, it is characterized in that, adopting the semiconductor monocrystal sheet is substrate, adopt metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) method growth multijunction solar cell wafer, the broad-band gap doping blocking layer of the same conductivity of growing respectively in the tunnel junction both sides that connect two batteries, can stop effectively that the impurity of tunnel junction high-concentration dopant is to outdiffusion, and within it with the carrier confinement of tunnel junction, make the transoid tunnel junction be similar to ohmic contact, reduce the series resistance of multijunction solar cell, improve the conversion efficiency and the fill factor, curve factor of solar cell, prolong the useful life of solar cell.
Description of drawings
Fig. 1 has two connection solar cell schematic diagrames of doping blocking layer.
Embodiment
In order to further specify structure of the present invention and feature, the present invention is further illustrated below in conjunction with embodiment and accompanying drawing.
As shown in Figure 1, a kind of preparation has two connection solar cells of doping blocking layer.Adopt metal organic chemical vapor deposition (MOCVD) method, with p p type gallium arensidep (p-GaAs) single-chip [1] is substrate, successively grown buffer layer (p-GaAs) [2], end battery (p-InGaAs layer, n-InGaAs layer) [3], doping blocking layer one (n-AlGaAs layer) [4], tunnel junction (n
+-GaAs layer, p
+-GaAs layer) [5], doping blocking layer two (p-AlGaAs layer) [6], top battery (p-InGaP layer, n-InGaP layer) [7], Window layer (n-AlGaP) [8], ohmic contact layer (n
+-GaAs) [9].After growth has two connection solar cell wafers of doping blocking layer, adopt conventional photoetching, plated film and scribing process and can make solar cell chip.
A kind of preparation of the present invention has the multijunction solar cell of doping blocking layer, its key is the doping blocking layer of same conductivity of growing respectively in the tunnel junction both sides that connect two junction batteries, the lattice constant on barrier layer is close with the lattice constant of tunnel junction, and the bandwidth on barrier layer is greater than the bandwidth on barrier layer.This doping blocking layer has two kinds of functions, and the one, the impurity of tunnel junction that stops high-concentration dopant is to outdiffusion; Next is with the carrier confinement of tunnel junction within it, makes the transoid tunnel junction be similar to ohmic contact, reduces the series resistance of multijunction solar cell, improves the conversion efficiency and the fill factor, curve factor of solar cell.Thereby the assurance solar cell can stably be worked in the environment of high power concentrator, and has working life steady in a long-term.
Claims (7)
1, a kind of multijunction solar cell with doping blocking layer is used for the high concentration solar generating system, it is characterized in that, utilizes doping blocking layer to stop that effectively the impurity of tunnel junction high-concentration dopant is to outdiffusion.
2, the multijunction solar cell with doping blocking layer according to claim 1 is characterized in that: multijunction solar cell is meant and is grown in knot of two on the same substrate and the above solar cell of two knots.
3, the multijunction solar cell with doping blocking layer according to claim 1, it is characterized in that: with semiconductor monocrystal sheets such as silicon, germanium, GaAs, indium phosphides is substrate, adopts metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) method growth multijunction solar cell wafer.
4, the multijunction solar cell with doping blocking layer according to claim 1, it is characterized in that: the doping blocking layer of the same conductivity of growing respectively in the tunnel junction both sides that connect two junction batteries, the lattice constant and the tunnel junction on barrier layer are close, and the bandwidth on barrier layer is greater than the barrier layer.
5, the multijunction solar cell with doping blocking layer according to claim 1 is characterized in that: adopt the method for photoetching and plated film to prepare electrode in the upper and lower surface of the good multijunction solar cell wafer of growth respectively.
6, the multijunction solar cell with doping blocking layer according to claim 1 is characterized in that: adopt the method for photoetching and plated film to prepare antireflective coating in the epi-layer surface of the good multijunction solar cell wafer of growth.
7, the multijunction solar cell with doping blocking layer according to claim 1 is characterized in that: the solar cell wafer that utilizes scribing machine will prepare electrode and antireflective coating is scratched, and makes solar cell chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101800780A CN101431117A (en) | 2008-11-24 | 2008-11-24 | Multi-junction solar cell with doping blocking layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101800780A CN101431117A (en) | 2008-11-24 | 2008-11-24 | Multi-junction solar cell with doping blocking layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101431117A true CN101431117A (en) | 2009-05-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CNA2008101800780A Pending CN101431117A (en) | 2008-11-24 | 2008-11-24 | Multi-junction solar cell with doping blocking layer |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950773A (en) * | 2010-08-09 | 2011-01-19 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell tunnel junction |
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102244114A (en) * | 2011-06-22 | 2011-11-16 | 厦门市三安光电科技有限公司 | High-concentration multi-junction solar cell and preparation method thereof |
| CN102709349A (en) * | 2012-06-21 | 2012-10-03 | 厦门乾照光电股份有限公司 | Wide-band gap multi-heterojunction tunnel junction structure |
| CN103875079A (en) * | 2011-08-29 | 2014-06-18 | Iqe公司 | Photovoltaic device |
| CN105359279A (en) * | 2013-06-18 | 2016-02-24 | 原子能和替代能源委员会 | Multi-junction solar cell |
| CN106549069A (en) * | 2015-09-21 | 2017-03-29 | 波音公司 | For the antimonide base high band gap tunnel knot of semiconductor devices |
-
2008
- 2008-11-24 CN CNA2008101800780A patent/CN101431117A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950773A (en) * | 2010-08-09 | 2011-01-19 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell tunnel junction |
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102184999B (en) * | 2011-04-02 | 2013-12-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102244114A (en) * | 2011-06-22 | 2011-11-16 | 厦门市三安光电科技有限公司 | High-concentration multi-junction solar cell and preparation method thereof |
| CN103875079A (en) * | 2011-08-29 | 2014-06-18 | Iqe公司 | Photovoltaic device |
| CN102709349A (en) * | 2012-06-21 | 2012-10-03 | 厦门乾照光电股份有限公司 | Wide-band gap multi-heterojunction tunnel junction structure |
| CN105359279A (en) * | 2013-06-18 | 2016-02-24 | 原子能和替代能源委员会 | Multi-junction solar cell |
| CN105359279B (en) * | 2013-06-18 | 2017-05-24 | 原子能和替代能源委员会 | Multi-junction solar cell |
| CN106549069A (en) * | 2015-09-21 | 2017-03-29 | 波音公司 | For the antimonide base high band gap tunnel knot of semiconductor devices |
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Open date: 20090513 |