CN102709349A - Wide-band gap multi-heterojunction tunnel junction structure - Google Patents
Wide-band gap multi-heterojunction tunnel junction structure Download PDFInfo
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- CN102709349A CN102709349A CN2012102072378A CN201210207237A CN102709349A CN 102709349 A CN102709349 A CN 102709349A CN 2012102072378 A CN2012102072378 A CN 2012102072378A CN 201210207237 A CN201210207237 A CN 201210207237A CN 102709349 A CN102709349 A CN 102709349A
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Abstract
The invention discloses a wide-band gap multi-heterojunction tunnel junction structure, which comprises four functional layers from the first to the fourth, wherein the first functional layer is provided with a first band gap and a first type doping; the second functional layer is provided with a second band gap smaller than the first band gap and the first type doping; the third functional layer is provided with a third band gap and a second type doping; and the fourth functional layer is provided with a fourth band gap larger than the third band gap and the second type doping. Due to the adoption of the structure provided by the invention, the problem that the peak current density of the wide-band tunnel junction in the prior art is low is solved, four functional layers are adopted to form the tunnel junction structure, and hetero junctions are formed among the functional layers, so that the peak tunneling current can be improved either by the band offset of a pN type or nP type heterojunction structure, or by the carrier compensation, which is realized through the injection effect of a carrier of a Pp type or Nn type heterojunction structure, and accordingly, the series resistance value is smaller. Therefore, the wide-band gap multi-heterojunction tunnel junction structure can be applied to a high-power concentrator solar cell.
Description
Technical field
The present invention relates to a kind of many heterojunction of broad-band gap tunnel junctions structure, is the tunnel junctions structure that is used to be connected in series the high power concentrator GaAs multijunction solar cell of a plurality of sub-batteries.
Technical background
The GaAs multijunction solar cell is formed by the sub-battery serial connection of some different band gap, and each sub-battery is the p-n junction structure, if directly be cascaded, then sub-battery contact interface can form anti-inclined to one side p-n junction and cause voltage to be cancelled out each other and non-conductive.Adopting tunnel junctions to connect can address this problem.Tunnel junctions also is the p-n junction structure, is characterized in that functional layer thin thickness and doping content are very high, and Fermi level gets into the valence band and the conduction band in P district and N district respectively; When solar irradiation, electrical potential difference appears in the tunnel junctions two ends, and N district majority carrier-electronics can the conduction band direct Tunneling get into P district valence band from the N district; So generation tunnelling current; Reach the effect that connects two sub-batteries, when electrical potential difference constantly increases, when N district charge carrier Fermi level is higher than P district charge carrier Fermi level; Charge carrier just can not tunnelling, and the tunnel junctions electric current was called the peak value peak and wore electric current this moment.It is relevant with doping content that electric current is worn at the peak value peak of tunnel junctions, and doping content is high more, and the peak value tunnelling current of tunnel junctions is big more.
In order to reduce the absorption of tunnel junctions to sunlight, the tunnel junctions functional layer requires to adopt wide bandgap material.Yet along with the increase of material band gap, the effective doping content and the charge carrier tunnelling probability of semiconductor layer all can descend, and cause the tunnel junctions peak current density can be exponential form and descend.Traditional tunnel junctions is made up of two functional layers, promptly only has the second and the 3rd functional layer.Like N
++GaAs/P
++GaAs, N
++GaAs/P
++Structures such as AlGaAs, its band gap is less, has limited the more application of the sub-battery of broad-band gap, and adopts the AlInP of broad-band gap
2/ GaInP
2Tunnel junctions [Electronics letters 1998 Vol. 34 No. 4], Al
0.2Ga
0.3In
0.5P/Al
0.9Ga
0.1As tunnel junctions [Sharps, P.R. Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE], peak current density all is lower than 2A/cm
2, be difficult to satisfy the application of high concentrating solar battery.
Summary of the invention
In order to solve the low problem of above-mentioned broad-band gap tunnel junctions peak current density, the object of the present invention is to provide a kind of many heterojunction of broad-band gap tunnel junctions structure, to improve the peak value tunnelling current, satisfy the application of high concentrating solar battery.
In order to reach above-mentioned purpose, solution of the present invention is:
A kind of many heterojunction of broad-band gap tunnel junctions structure is made up of four functional layers; First functional layer has first band gap and first type mixes; Second functional layer has second band gap and first type mixes, and band gap is less than first band gap; The 3rd functional layer has the 3rd band gap and second type mixes; The 4th functional layer has four-tape crack and second type mixes, and band gap is greater than the 3rd band gap.
For being positioned at outer field first functional layer and the 4th functional layer, its band gap 2.20eV (electron-volt)≤Eg (semiconducting compound energy gap Energy gap)≤2.50eV, constituent is (Al
yGa
1-y)
1-xIn
xP or (Al
yGa
1-y)
1-xIn
xAs, wherein the component of In is 0≤x≤0.85, and the component of Al is 0.50≤y≤1.00, and each constituent content is with molar ratio computing, and film thickness is 20-100 nm, doping content is 5 * 10
18-5 * 10
20Cm
-3
For second functional layer that is positioned at internal layer and the 3rd functional layer, its band gap 1.80eV≤Eg≤2.20eV, constituent is (Al
yGa
1-y)
1-xIn
xP or (Al
yGa
1-y)
1-xIn
xAs, component 0≤x≤0.85 of In wherein, component 0≤y＜0.50 of Al, film thickness is 10-20 nm, doping content is 5 * 10
18-5 * 10
20Cm
-3
After adopting such scheme; The invention solves the low problem of prior art broad-band gap tunnel junctions peak current density; Adopt four functional layers to form the tunnel junctions structure; Form heterojunction between each functional layer, both can improve the peak value tunnelling current through the band rank of pN type or nP type heterostructure, the injection effect of charge carrier that again can be through Pp type or Nn type heterostructure is realized the charge carrier compensation; Further improve peak value tunnelling current and littler series resistance, thereby satisfy the application of high concentrating solar battery.
Description of drawings
Fig. 1 is the structural representation of first embodiment;
Fig. 2 is the structural representation of second embodiment;
Fig. 3 is the structural representation of the 3rd embodiment;
Fig. 4 is the structural representation behind the bonding of peeling off of the 3rd embodiment.
Embodiment
First kind of execution mode of the present invention is as shown in Figure 1, and the sub-battery of first band gap 11, first functional layer 12, second functional layer 13, the 3rd functional layer 14, the 4th functional layer 15, the sub-battery 16 of second band gap and cap layer 17 are arranged on substrate 10 successively.Substrate 10 is Ge or GaAs.The sub-battery 11 of first band gap is the homojunction or the heterojunction of PN type by the polarity that one or more materials such as GaAs, GaInAs, GaInNAs, GaInNAsSb, GaInAsP, AlGaAs, AlGaAsP, AlGaInAs, GaInP, AlGaInP constitute.First functional layer 12 constitutes Al component 0.85, doping Si, thickness 20-100nm, doping content 1 * 10 by AlGaInP
19Cm
-3Second functional layer 13 is made up of AlGaInP, and the Al component is 0.15, is doped to Si, and thickness is 10-20nm, doping content 5 * 10
19Cm
-3The 3rd functional layer 14 is made up of AlGaAs, and the Al component is 0.15, is doped to C, and thickness is 10-20nm, doping content 1 * 10
20Cm
-3The 4th functional layer 15 is made up of AlGaAs, and the Al component is 0.85, is doped to C, and thickness is 20-100nm, doping content 1 * 10
20Cm
-3The sub-battery 16 of second band gap is the homojunction or the heterojunction of PN type by the polarity that one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP constitute.Cap layer 17 is GaAs or GaInAs.Wherein, second functional layer 13 and the 3rd functional layer 14 form pN type heterojunction, and majority carrier is compounded to form tunnelling current; First functional layer 12 and second functional layer 13 form Nn type heterojunction; Heterojunction boundary can be through diffuseing to form effective field of force; Majority carrier is constantly compensated in second functional layer 13 through drifting about, and heterojunction can form the band rank and can form potential barrier, effectively stop majority carrier to leak; The 3rd functional layer 14 and the 4th functional layer 15 form pP type heterojunction; Heterojunction boundary can be through diffuseing to form effective field of force; Majority carrier is constantly compensated in the 3rd functional layer 14 through drifting about, and heterojunction can form the band rank and can form potential barrier, effectively stop majority carrier to leak.Because the charge carrier of first functional layer 12, the 4th functional layer 15 injects and the anti-leak effect; Increased the efficient carrier concentration in second functional layer 13, the 3rd functional layer 14; Thereby this tunnel junctions structure has higher peak value tunnelling current, adopt the battery of this tunneling structure can be under the sunlight of higher light concentrating times operate as normal.
Second kind of execution mode of the present invention is as shown in Figure 2, and the sub-battery of the sub-battery of the sub-battery of first band gap 201, first tunnel junctions, first function 202, first tunnel junctions, second function 203, first tunnel junctions the 3rd function 204, first tunnel junctions the 4th function 205, second band gap 206, second tunnel junctions, first function 207, second tunnel junctions, second function 208, second tunnel junctions the 3rd function 209, second tunnel junctions the 4th function 210, the 3rd band gap 211, cap layer 212 are arranged on substrate 200 successively.Substrate 200 is Ge.The sub-battery 201 of first band gap is made up of the p-n junction of Ge.First tunnel junctions, first function 202 constitutes Al component 0.15, doping Si, thickness 20-100nm, doping content 5 * 10 by AlGaInP
19Cm
-3First tunnel junctions, second functional layer 203 constitutes Al component 0.05, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3First tunnel junctions the 3rd functional layer 204 is formed Al component 0.10, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3First tunnel junctions the 4th functional layer 205 is formed Al component 0.30, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3The sub-battery 206 of second band gap is the homojunction or the heterojunction of PN type by the polarity that one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP constitute.Second tunnel junctions, first function 207 constitutes Al component 0.85, doping Si, thickness 20-100nm, doping content 5 * 10 by AlGaInP
19Cm
-3Second tunnel junctions, second functional layer 208 constitutes Al component 0.15, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3Second tunnel junctions the 3rd functional layer 209 is formed Al component 0.15, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3Second tunnel junctions the 4th functional layer 210 is formed Al component 0.85, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3The sub-battery 211 of the 3rd band gap is the homojunction or the heterojunction of PN type by the polarity that one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP, GaAsSb constitute.Cap layer 212 is GaAs or GaInAs.Wherein, second functional layer 203 of first tunnel junctions and the 3rd functional layer 204 form pN type heterojunction, and majority carrier is compounded to form tunnelling current; First functional layer 202 of first tunnel junctions and second functional layer 203 form Nn type heterojunction; Heterojunction boundary can be through diffuseing to form effective field of force; Make majority carrier constantly compensate in second functional layer 203 through drifting about; And heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; The 3rd functional layer 204 of first tunnel junctions and the 4th functional layer 205 form pP type heterojunction; Heterojunction boundary can be through diffuseing to form effective field of force; Make majority carrier constantly compensate in the 3rd functional layer 204 through drifting about; And heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; Because the charge carrier of first functional layer 202 and the 4th functional layer 205 injects and the anti-leak effect, has increased the efficient carrier concentration in second functional layer 203 and the 3rd functional layer 204, thereby has increased the peak value tunnelling current of this tunnel junctions structure.Second functional layer 208 of second tunnel junctions and the 3rd functional layer 209 form pN type heterojunction, and majority carrier is compounded to form tunnelling current; First functional layer 207 of second tunnel junctions and second functional layer 208 form Nn type heterojunction; Heterojunction boundary can be through diffuseing to form effective field of force; Make majority carrier constantly compensate in second functional layer 208 through drifting about; And heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; The 3rd functional layer 209 of second tunnel junctions and the 4th functional layer 210 form pP type heterojunction; Heterojunction boundary can be through diffuseing to form effective field of force; Make majority carrier constantly compensate in the 3rd functional layer 209 through drifting about; And heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; Because the charge carrier of first functional layer 207 and the 4th functional layer 210 functional layers injects and the anti-leak effect; Increase the efficient carrier concentration in second functional layer 208 and the 3rd functional layer 209 functional layers, thereby increased the peak value tunnelling current of this tunnel junctions structure.Three junction batteries are owing to adopted two groups of broad stopband heterojunction tunnel junctions structures, and tunnel junctions reduces the absorption loss of sunlight, and the peak value tunnelling current of tunnel junctions is bigger, can be under the sunlight of higher light concentrating times operate as normal.
The third execution mode of the present invention is as shown in Figure 3, and the sub-battery of the sub-battery of the sub-battery of first cap layer 301, first band gap 302, first tunnel junctions, first functional layer 303, first tunnel junctions, second functional layer 304, first tunnel junctions the 3rd functional layer 305, first tunnel junctions the 4th functional layer 306, second band gap 307, second tunnel junctions, first functional layer 308, second tunnel junctions, second functional layer 309, second tunnel junctions the 3rd functional layer 310, second tunnel junctions the 4th functional layer 311, the 3rd band gap 312, second cap layer 313 are arranged on substrate 300 successively.Substrate 300 is Ge or GaAs, and first cap layer 301 is GaAs or GaInAs.Homojunction or heterojunction that the sub-battery 302 of first band gap is made up of one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP, GaAsSb.First tunnel junctions, first functional layer 303 is formed Al component 0.85, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3First tunnel junctions, second functional layer 304 is formed Al component 0.15, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3First tunnel junctions the 3rd functional layer 305 constitutes Al component 0.30, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3First tunnel junctions the 4th function 306 constitutes Al component 0.85, doping Si, thickness 20-100nm, doping content 5 * 10 by AlGaInP
19Cm
-3Homojunction or heterojunction that the sub-battery 307 of second band gap is made up of one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP.Second tunnel junctions, first functional layer 308 is formed Al component 0.45, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3Second tunnel junctions, second functional layer 309 is formed Al component 0.05, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3Second tunnel junctions the 3rd functional layer 310 constitutes Al component 0.10, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3Second tunnel junctions the 4th functional layer 311 constitutes Al component 0.45, doping Si, thickness 20-100nm, doping content 1 * 10 by AlGaInP
20Cm
-3Homojunction or heterojunction that the sub-battery 312 of the 3rd band gap is made up of one or more materials such as GaInAs, GaInAsP, GaInNAsP, AlGaInAs.Second cap layer 313 is GaInAs.Epitaxial growth is bonded in epitaxial loayer on the new substrate 314 after accomplishing, and the peel-away removal substrate 300 then.Epitaxial loayer counter-rotating and with new substrate 314 bondings after the new construction that constituted as shown in Figure 4.Second cap layer 313 is arranged on substrate 314 successively; The sub-battery 312 of the 3rd band gap; Second tunnel junctions the 4th functional layer 311; Second tunnel junctions the 3rd functional layer 310; Second tunnel junctions, second functional layer 309; Second tunnel junctions, first functional layer 308; The sub-battery 307 of second band gap; First tunnel junctions the 4th functional layer 306; First tunnel junctions the 3rd functional layer 305; First tunnel junctions, second functional layer 304; First tunnel junctions, first functional layer 303; The sub-battery 302 of first band gap; First cap layer 301.Owing to adopted two groups of broad stopband many heterojunction tunnel junctions structures, tunnel junctions reduces the absorption loss of sunlight, and the peak value tunnelling current of tunnel junctions is bigger, can be under the sunlight of higher light concentrating times operate as normal.
Above embodiment only supplies to explain the present invention's usefulness, but not limitation of the present invention.Those skilled in the art under the situation that does not break away from the spirit and scope of the present invention, can make various conversion or variation.Therefore, all technical schemes that are equal to also should belong to category of the present invention.
Claims (7)
1. many heterojunction of broad-band gap tunnel junctions structure is characterized in that: be made up of four functional layers; First functional layer has first band gap and first type mixes; Second functional layer has second band gap and first type mixes, and band gap is less than first band gap; The 3rd functional layer has the 3rd band gap and second type mixes; The 4th functional layer has four-tape crack and second type mixes, and band gap is greater than the 3rd band gap.
2. a kind of many heterojunction of broad-band gap tunnel junctions structure according to claim 1 is characterized in that: be positioned at outer field first functional layer and the 4th functional layer, its band gap 2.20eV≤Eg≤2.50eV.
3. a kind of many heterojunction of broad-band gap tunnel junctions structure according to claim 2 is characterized in that: the constituent of first functional layer and the 4th functional layer is (Al
yGa
1-y)
1-xIn
xP or (Al
yGa
1-y)
1-xIn
xAs, component 0≤x≤0.85 of In wherein, component 0.50≤y≤1.00 of Al, each constituent content is with molar ratio computing, and film thickness is 20-100nm.
4. a kind of many heterojunction of broad-band gap tunnel junctions structure according to claim 2, it is characterized in that: the doping content of first functional layer and the 4th functional layer is 5 * 10
18-5 * 10
20Cm
-3
5. a kind of many heterojunction of broad-band gap tunnel junctions structure according to claim 1 is characterized in that: be positioned at second functional layer and the 3rd functional layer of internal layer, its band gap 1.80eV≤Eg≤2.20eV.
6. a kind of many heterojunction of broad-band gap tunnel junctions structure according to claim 5 is characterized in that: the constituent of second functional layer and the 3rd functional layer is (Al
yGa
1-y)
1-xIn
xP or (Al
yGa
1-y)
1-xIn
xAs, component 0≤x≤0.85 of In wherein, component 0≤y＜0.50 of Al, each constituent content is with molar ratio computing, and film thickness is 10-20nm.
7. a kind of many heterojunction of broad-band gap tunnel junctions structure according to claim 5, it is characterized in that: the doping content of second functional layer and the 3rd functional layer is 5 * 10
18-5 * 10
20Cm
-3
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| CN106129165A (en) * | 2016-09-05 | 2016-11-16 | 上海空间电源研究所 | A kind of heterojunction solar battery helping effect containing bilateral field |
| CN113035983A (en) * | 2021-03-08 | 2021-06-25 | 扬州乾照光电有限公司 | Multi-junction solar cell and preparation method thereof |
| CN113471322A (en) * | 2020-03-30 | 2021-10-01 | 隆基绿能科技股份有限公司 | Laminated photovoltaic device and production method |
| CN114335215A (en) * | 2022-03-15 | 2022-04-12 | 南昌凯迅光电股份有限公司 | Gallium arsenide solar cell with gradual change tunneling junction and manufacturing method thereof |
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| CN106129165A (en) * | 2016-09-05 | 2016-11-16 | 上海空间电源研究所 | A kind of heterojunction solar battery helping effect containing bilateral field |
| CN113471322A (en) * | 2020-03-30 | 2021-10-01 | 隆基绿能科技股份有限公司 | Laminated photovoltaic device and production method |
| CN113471322B (en) * | 2020-03-30 | 2022-12-02 | 隆基绿能科技股份有限公司 | Laminated photovoltaic device and production method |
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| CN113035983A (en) * | 2021-03-08 | 2021-06-25 | 扬州乾照光电有限公司 | Multi-junction solar cell and preparation method thereof |
| CN113035983B (en) * | 2021-03-08 | 2022-08-09 | 扬州乾照光电有限公司 | Multi-junction solar cell and preparation method thereof |
| CN114335215A (en) * | 2022-03-15 | 2022-04-12 | 南昌凯迅光电股份有限公司 | Gallium arsenide solar cell with gradual change tunneling junction and manufacturing method thereof |
| CN114335215B (en) * | 2022-03-15 | 2022-06-14 | 南昌凯迅光电股份有限公司 | Gallium arsenide solar cell with gradual change tunneling junction and manufacturing method thereof |
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