CN102651416A - Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof - Google Patents
Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof Download PDFInfo
- Publication number
- CN102651416A CN102651416A CN2012101549981A CN201210154998A CN102651416A CN 102651416 A CN102651416 A CN 102651416A CN 2012101549981 A CN2012101549981 A CN 2012101549981A CN 201210154998 A CN201210154998 A CN 201210154998A CN 102651416 A CN102651416 A CN 102651416A
- Authority
- CN
- China
- Prior art keywords
- gaas
- battery
- layer
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a three-knot laminated GaAs laser photovoltaic battery and a preparation method thereof, which comprises a GaAs substrate, and a N-typed GaAs conductive layer, a first tunneling knot, a bottom battery, a second tunneling knot, a middle battery, a third tunneling knot, a top battery, a window layer and a GaAs contacting layer which are sequentially arranged on the substrate. The invention also provides a preparation method of the three-knot laminated GaAs laser photovoltaic battery, which comprises steps of: (1) providing the GaAs substrate; and (2) sequentially growing the N-typed GaAs conductive layer, the first tunneling knot, the bottom battery, the second tunneling knot, the middle battery, the third tunneling knot, the top battery, the window layer and the GaAs contacting layer on the substrate.
Description
Technical field
The present invention relates to laser photovoltaic field of batteries, relate in particular to three knot lamination GaAs laser photovoltaic cells and preparation method thereof.
Background technology
The laser energy supplying system is the energy delivery system of an innovation, relies on this system, and the light that LASER Light Source is sent passes through fibre to the laser photovoltaic cell, and stable power output can be provided.Than traditional metal wire and coaxial cable power transmission technology more advantage is arranged for electricity through the fiber optic conduction phototransformation; Can be applied in need to eliminate electromagnetic interference maybe need situation with electronic device and surrounding environment isolation under, in directions such as radio communication, industrial sensor, national defence, aviation, medicine, the energy important application is arranged.The operation principle and the solar cell of laser photovoltaic cell are similar; Just have to obtain higher conversion efficiency, bigger output voltage can transmit more energy; Different with general solar cell is that light source adopts the laser of the 790 nm-850 nm wavelength that is fit to Optical Fiber Transmission.
GaAs is an III/V family semi-conducting material; Energy gap Eg under the room temperature is 1.428 eV; GaAs PN junction battery can be used for converting the laser energy of 808 nm into electric energy; As the laser battery in the laser energy supplying system, but to have only be 1 V to the open circuit voltage of GaAs battery, can not directly be used for the power supply of electronic device circuit.Early stage laser photovoltaic cell be with several single junction cell units in series to obtain required output voltage, through the mode of etching isolated groove the battery chip of unit are is isolated, again through the lead-in wire mode with several single junction cell units in series.The more effective light-receiving areas of battery that will cause of the number of isolated groove are just more little; We propose each battery unit is designed to the binode battery structure through the tunnel junctions connection for head it off; Can reduce the influence of isolated groove like this; Increase effective light-receiving area of laser light battery, reduce the interconnected series resistance of battery, help to improve the performance of device.
Summary of the invention
Technical problem to be solved by this invention is that three knot lamination GaAs laser photovoltaic cells and preparation method thereof are provided.
In order to address the above problem; The invention provides a kind of three knot lamination GaAs laser photovoltaic cells; The substrate that comprises GaAs, and the N type GaAs conductive layer, first tunnel junctions, end battery, second tunnel junctions, middle battery, the 3rd tunnel junctions, top battery, N type Window layer and the GaAs contact layer that on said substrate, set gradually.
Described three knot lamination GaAs laser photovoltaic cells further comprise isolation channel, and said isolation channel is for to run through to the substrate direction from contact layer, until manifesting substrate, and are filled with silica or polyimides glue in the said isolation channel.
Said first tunnel junctions, second tunnel junctions and the 3rd tunnel junctions include according to N type (Al) GaAs ((Al) GaInP) layer, the N type GaAs (Ga that grow successively away from the substrate direction
0.51In
0.49P) layer, P type (Al) GaAs layer and P type AlGaAs ((Al) GaInP) layer.
Battery of the said end, middle battery and top battery are the PN junction battery based on GaAs, and separately P district of battery of the said end, middle battery and top battery, N district are all successively away from substrate.
Described three knot lamination GaAs laser photovoltaic cells further comprise the positive electrode window, and said positive electrode window is for running through from contact layer toward the conductive layer direction, until manifesting conductive layer.
Described three knot lamination GaAs laser photovoltaic cells comprise that further material is ZnSe/MgF or TiO
2/ SiO
2Antireflective coating, place on the exposed surface of said Window layer.
In order to address the above problem, the present invention also provides three a kind of as above-mentioned knot lamination GaAs laser photovoltaic battery preparation methods, and comprise step: (1) provides GaAs substrate; (2) on substrate, grow successively N type GaAs conductive layer, first tunnel junctions, end battery, second tunnel junctions, middle battery, the 3rd tunnel junctions, top battery, Window layer and GaAs contact layer.
The preparation method of described three knot lamination GaAs laser photovoltaic cells, further comprise step: (3) employing dry method or wet etching method to substrate direction etching, until manifesting substrate surface, form isolation channel from contact layer; (4) in isolation channel, fill silica or polyimides glue.
The preparation method of described three knot lamination GaAs laser photovoltaic cells, further comprise step: (5) adopt dry method or wet etching method from contact layer toward conductive layer direction etching, until manifesting conductive layer, form the positive electrode window.
The preparation method of described three knot lamination GaAs laser photovoltaic cells further comprises step: adopt the GaAs contact layer of dry method or wet etching method etching appointed area, until the surface that exposes Window layer; The antireflective coating of on the exposed surface of Window layer, growing, the method for said growth antireflective coating be in chemical vapor deposition, evaporation and the sputter any one.
The present invention provides three knot lamination GaAs laser photovoltaic cells and preparation method thereof, and advantage is:
1. three knot lamination GaAs laser photovoltaic cells have realized that there are three battery series connection each unit, have reduced series resistance, help the raising of battery efficiency;
2. among the present invention,, reduced the ratio of the shared light-receiving area of isolated groove, reduced the loss of incident light on isolated groove, helped the raising of battery efficiency for the photovoltaic cell of equal open circuit voltage;
3. among the present invention; GaAs contact layer and conductive layer all adopt N type GaAs, and a step can be accomplished the evaporation or the plating thickening of the metal ohmic contact of positive and negative electrode in battery process, reduces a step photoetching, a step stripping technology; Reduce by a reticle, save the processes time and reduce cost;
4. three knot lamination GaAs laser photovoltaic cells provided by the invention can obtain the output voltage of about 3N volt through N units in series.
Description of drawings
Fig. 1 is the battery schematic cross-section of three knot lamination GaAs laser photovoltaic cells, first embodiment provided by the invention;
Fig. 2 is the battery isolation channel schematic cross-section of three knot lamination GaAs laser photovoltaic cells, first embodiment provided by the invention;
Fig. 3 is the battery product structural section sketch map of three knot lamination GaAs laser photovoltaic cells, first embodiment provided by the invention;
Fig. 4 A to Fig. 4 D is respectively the vertical view of 3V provided by the invention, 6V, 9V, 12V three knot lamination GaAs laser photovoltaic cells.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to three knot lamination GaAs laser photovoltaic cells provided by the invention and preparation method thereof.
First embodiment
Fig. 1 is the battery schematic cross-section of said three knot lamination GaAs laser photovoltaic cells, first embodiment.
Fig. 2 is the battery isolation channel schematic cross-section of three knot lamination GaAs laser photovoltaic cells, first embodiment.
This execution mode provides a kind of three knot lamination GaAs laser photovoltaic cells; As shown in Figure 1; Comprise the substrate 01 of GaAs, and the conductive layer of the N type GaAs that on substrate 01, sets gradually 02, first tunnel junctions 23, end battery 24, second tunnel junctions 25, middle battery 26, the 3rd tunnel junctions 27, top battery 28, Window layer 21 and GaAs contact layer 22.
As shown in Figure 2; Said three knot lamination GaAs laser photovoltaic cells further comprise isolation channel 30; Said isolation channel 30 is for running through from GaAs contact layer 22 toward substrate 01 direction; Until manifesting substrate 01, and in isolation channel 30, isolate through filling out electrical insulating materials such as polyimides glue (Polyimide is called for short PI glue) or silica.
The silica or the polyimides glue of in isolation channel 30, filling in this execution mode, and the invention is not restricted to this, filler also can comprise the glue of the light sensitivity of other similar PI glue in isolation channel 30.
Wherein, the GaAs (Ga that is occurred among the application
0.51In
0.49P) be GaAs or Ga
0.51In
0.49The meaning of P.
Wherein, (Al) GaAs that is occurred among the application is Al
xGa
1-xThe meaning of As, wherein x is more than or equal to 0 and smaller or equal to 1.
Said second barrier layer 06 also can be used as the back of the body field layer of end battery 24.
Said the 3rd barrier layer 09 also can be used as the Window layer of end battery 24; The back of the body field layer of battery 26 during the 4th barrier layer 12 also can be used as.
The 3rd tunnel junctions 27 comprises according to the 5th barrier layer 15, the 3rd N type GaAs (Ga that grow successively away from substrate 01 direction
0.51In
0.49P) layer the 16, the 3rd P type (Al) GaAs layer 17 and the 6th barrier layer 18.
The Window layer of battery 26 during said the 5th barrier layer 15 can be used as; The 6th barrier layer 18 also can be used as the back of the body field layer of top battery 28.
The material of first barrier layer 03, the 3rd barrier layer 09 and the 5th barrier layer 15 is N type (Al) GaAs ((Al) GaInP); The material of said second barrier layer 06, the 4th barrier layer 12 and the 6th barrier layer 18 is P type AlGaAs ((Al) GaInP).
Wherein, (Al) GaAs that is occurred among the application ((Al) GaInP) is Al
xGa
1-xAs or Al
xGa
1-xThe meaning of InP, wherein x is more than or equal to 0 and smaller or equal to 1.
Wherein, the AlGaAs that is occurred among the application ((Al) GaInP) is AlGaAs or Al
xGa
1-xThe meaning of InP, wherein x is more than or equal to 0 and smaller or equal to 1.
The material of Window layer 21 is N type AlGaAs (Ga
0.51In
0.49P), can be used as the Window layer of top battery 28.
The material of GaAs contact layer 22 is the GaAs of N type.
Shown in Figure 3 is the battery product structural section sketch map of three knot lamination GaAs laser photovoltaic cells, first embodiment.
In this embodiment three knot lamination GaAs laser photovoltaic cell further comprises the positive electrode window, and as shown in Figure 3, the positive electrode window is for running through from GaAs contact layer 22 toward conductive layer 02 direction, until manifesting conductive layer 02.
Said three knot lamination GaAs laser photovoltaic cells further comprise GaAs contact layer 22 removals under negative electrode 31, expose Window layer 21.
Said three knot lamination GaAs laser photovoltaic cells further comprise positive electrode 32 and negative electrode 31, and said positive electrode 32 places on the exposed surface of said positive electrode window conductive layer 02; Said negative electrode 31 places on the exposed surface of contact layer 22.Positive electrode 32 is connected through contact conductor 34 with negative electrode 31.
Described three knot lamination GaAs laser photovoltaic cells comprise that further material is ZnSe/MgF or TiO
2/ SiO
2 Antireflective coating 33, place on the exposed surface of said Window layer 21.
The series resistance for preparing battery according to the structure by Fig. 1 is lower than the series resistance of a plurality of single PN kink structure batteries that under identical voltage output situation, connect through lead-in wire; Helping battery receives higher optical power density and improves battery efficiency; Therefore said structure has the conversion efficiency higher than PN junction battery, has good actual application and is worth.
Second embodiment
The described three knot lamination GaAs laser photovoltaic cells of preparation structure such as Fig. 1 comprise step:
(1) on the substrate 01 of Semi-insulating GaAs with MOCVD or MBE method growth N type GaAs conductive layer 02;
(2) first barrier layer 03 of growth N type AlGaAs ((Al) GaInP) on N type GaAs conductive layer;
(3) on first barrier layer 03, grow N type doping content greater than 1 * 10
19Cm
-3A GaAs (Ga
0.51In
0.49P) layer 04, regrowth P type doping content 1 * 10
19Cm
-3Above first (Al) GaAs layer 05 forms first tunnel junctions 23;
(4) second barrier layer 06 of growing P-type AlGaAs ((Al) GaInP) on first tunnel junctions 23, and as the back of the body field layer of GaAs battery;
(5) growing P-type GaAs absorbed layer on above-mentioned second barrier layer 06, i.e. a P district 07, growth N type GaAs absorbed layer in a P district 07, promptly a N district 08 forms a PN junction, as end battery 24;
(6) the 3rd barrier layer 09 of growth N type AlGaAs ((Al) GaInP) on end battery 24;
(7) growth N type doping content 1 * 10 on the 3rd barrier layer 09
19Cm
-3The 2nd above GaAs (Ga
0.51In
0.49P) layer 10, regrowth P type doping content 1 * 10
19Cm
-3Above second (Al) GaAs layer 11 forms second tunnel junctions 25;
(8) the 4th barrier layer 12 of growing P-type AlGaAs ((Al) GaInP) on second tunnel junctions 25, and as the back of the body field layer of GaAs battery;
(9) growing P-type GaAs absorbed layer on above-mentioned the 4th barrier layer 12, i.e. the 2nd P district 13, growth N type GaAs absorbed layer in the 2nd P district 13, promptly the 2nd N district 14 forms a PN junction, as middle battery 26;
(10) the 5th barrier layer 15 of growth N type AlGaAs ((Al) GaInP) on middle battery 26;
(11) growth N type doping content 1 * 10 on the 5th barrier layer 15
19Cm
-3The 3rd above GaAs (Ga
0.51In
0.49P) layer 16, regrowth P type doping content 1 * 10
19Cm
-3Above the 3rd (Al) GaAs layer 17 forms the 3rd tunnel junctions 27;
(12) the 6th barrier layer 18 of growing P-type AlGaAs ((Al) GaInP) on the 3rd tunnel junctions 27, and as the back of the body field layer of GaAs battery;
(13) growing P-type GaAs absorbed layer on above-mentioned the 6th barrier layer 18, i.e. the 3rd P district 19, growth N type GaAs absorbed layer in the 3rd P district 19, promptly the 3rd N district 20 forms a PN junction, as top battery 28;
(14) growth N type Al on N type GaAs absorbed layer 20
xGa
1-xAs (Ga
0.51In
0.49P) Window layer 21;
(15) the GaAs contact layer 22 of growth N type high-dopant concentration on above-mentioned Window layer 21 is as ohmic contact.
Above-mentioned steps (1) to (15) all adopts MOCVD or MBE method to prepare said three knot lamination GaAs laser photovoltaic cells.
If mocvd method is all adopted in the growth in the step (1) to (15), the foreign atom that then said N type mixes be among Si, Se, S and the Te any one, the foreign atom that said P type mixes be among Zn, Mg and the C any one.
If the growth of MBE method is all adopted in the growth in the step (1) to (15), the foreign atom that then said N type mixes be among Si, Se, S, Sn and the Te any one, the foreign atom that said P type mixes be among Be, Mg and the C any one.
Further use battery standard technology and carry out preparation, comprise step like three knot lamination GaAs laser photovoltaic battery products among Fig. 3:
(16) according to battery standard technology; Through dry method or wet etching method from GaAs contact layer 22 toward substrate 01 direction etchings; Until the substrate 01 that manifests N type Semi-insulating GaAs, isolate through filling out electrical insulating materials such as polyimides glue or silica again, form isolation channel 30;
(17), from GaAs contact layer 22 toward conductive layer 02 direction etchings,, form the positive electrode window of battery until the conductive layer 02 that manifests N type GaAs through dry method or wet etching method according to battery standard technology;
(18) according to battery standard technology, the negative electrode of battery 31 prepares through modes such as electron beam evaporation, thermal evaporation or magnetron sputterings with positive electrode 32, said negative electrode 31 and positive electrode 32 be AuGe/Ni/Au; Ag; The Au metal material, and form ohmic contact with GaAs contact layer 22 and conductive layer 02 respectively;
(19) according to battery standard technology, will remove except that the GaAs contact layer the GaAs contact layer 22 under the negative electrode 31 22, expose Window layer 21.
(20) according to battery standard technology, the antireflective coating 33 of battery is through method preparation ZnSe/MgF or TiO on exposed Window layer 21 of chemical vapor deposition, evaporation or sputter
2/ SiO
2Antireflection layer;
(21), carry out adjacent cells positive electrode 32 with 34 pairs of batteries of contact conductor and connect with negative electrode 31 interconnected realization batteries according to battery standard technology.
Next provide one embodiment of the invention.
A kind of manufacture method of three knot lamination GaAs laser photovoltaic cells, structure is as shown in Figure 1, specifically comprises the following steps:
One, uses the method growth GaAs three knot lamination GaAs laser photovoltaic cells of MOCVD or MBE.
1), adopt Semi-insulating GaAs substrate 01, thickness range is 200 microns to 500 microns;
2), get into MOCVD or MBE growth room, growth one deck thickness range is the N type GaAs conductive layer 02 of 1000nm to 5000nm earlier on Semi-insulating GaAs substrate 01 exposed surface, doping content is up to 1 * 10
18To 1 * 10
19Cm
-3
3), grow doping concentration 1 * 10 on conductive layer 02
18Cm
-3Above thickness range is first barrier layer 03 of the N type AlGaAs ((Al) GaInP) of 10nm to 50 nm,
4), on first barrier layer, 03 exposed surface, grow N type doping content greater than 1 * 10
19Cm
-3Thickness range be the GaAs (Ga of 10nm to 50 nm
0.51In
0.49P) layer 04, regrowth P type doping content is greater than 1 * 10
19Cm
-3Thickness range be first (Al) GaAs layer 05 of 10nm to 50nm, form first tunnel junctions 23, a P district 07 that makes end battery 24 can finely be connected with the conductive layer 02 of following N type GaAs;
5), grow doping concentration 1 * 10 on first tunnel junctions 23
18Cm
-3Above thickness range is second barrier layer 06 of the P type AlGaAs ((Al) GaInP) of 50nm to 100nm, and as the back of the body field layer of end battery 24;
6), the growth thickness scope is that the doping content of the P type of 2500nm to 3500nm is 5 * 10 on the exposed surface of second barrier layer 06
16To 5 * 10
17Cm
-3The GaAs absorbed layer, i.e. a P district 07, as the base of end battery 24, the regrowth thickness range is that the N type doping content of 100nm to 300nm is 1 * 10
17To 4 * 10
18Cm
-3The GaAs absorbed layer, i.e. a N district 08 is as the emitter region of end battery 24; Form a PN junction, as end battery 24;
7), grow doping concentration 1 * 10 in a N district 08
18Cm
-3Above thickness range is the 3rd barrier layer 09 of the N type AlGaAs ((Al) GaInP) of 20nm to 100nm, as the Window layer of end battery 24, also is the barrier layer of second tunnel junctions simultaneously;
8), growth N type doping content is greater than 1 * 10
19Cm
-3Thickness range be the 2nd GaAs (Ga of 10nm to 50nm
0.51In
0.49P) layer 10, regrowth P type doping content is greater than 1 * 10
19Cm
-3Thickness range be second (Al) GaAs layer 11 of 10nm to 50nm, form second tunnel junctions 25;
9), grow doping concentration 1 * 10 on second tunnel junctions 25
18Cm
-3Above thickness range is the 4th barrier layer 12 of the P type AlGaAs ((Al) GaInP) of 50nm to 100nm, and as in the back of the body field layer of battery 26;
10), the growth thickness scope is that the doping content of the P type of 300nm to 600nm is 5 * 10
16To 1 * 10
17Cm
-3The GaAs absorbed layer, i.e. the 2nd P district 13, as the base of middle battery 26, the regrowth thickness range is that the N type doping content of 100nm to 300nm is 1 * 10
17To 4 * 10
18Cm
-3The GaAs absorbed layer, i.e. the 2nd N district 14 is as the emitter region of middle battery 26; Form a PN junction, and battery 26 in the conduct, and the total thickness in the 2nd P district 13 and the 2nd N district 14 is 600nm to 800nm;
11), grow doping concentration 1 * 10 in the 2nd N district 14
18Cm
-3Above thickness range is the 5th barrier layer 15 of the N type AlGaAs ((Al) GaInP) of 20nm to 100nm, as the Window layer of middle battery 26, also is the barrier layer of the 3rd tunnel junctions 27 simultaneously;
12), grow N type doping contents greater than 1 * 10 at the 5th barrier layer 15
19Cm
-3Thickness range be the 3rd GaAs (Ga of 10nm to 50nm
0.51In
0.49P) layer 16, regrowth P type doping content is greater than 1 * 10
19Cm
-3Thickness range be the 3rd (Al) GaAs layer 17 of 10nm to 50nm, form the 3rd tunnel junctions 27;
13), grow doping concentration 1 * 10 on the 3rd tunnel junctions 27
18Cm
-3Above thickness range is the 6th barrier layer 18 of the P type AlGaAs ((Al) GaInP) of 50nm to 100nm, and as the back of the body field layer of top battery 28;
14), the growth thickness scope is that the doping content of the P type of 200nm to 500nm is 5 * 10
16To 1 * 10
17Cm
-3The GaAs absorbed layer, i.e. the 3rd P district 19, as the base of top battery 28, the N type doping content of regrowth 100nm to 300nm is 1 * 10
17To 4 * 10
18Cm
-3The GaAs absorbed layer, i.e. the 3rd N district 20 is as the emitter region of top battery 28; Form a PN junction, and as top battery 28, and the total thickness in the 3rd P district 19 and the 3rd N district 20 is 300nm to 600nm;
15), the growth thickness scope is the doping content 1 * 10 of 1000nm to 3000nm in the 3rd N district 20
18Cm
-3The Al of above N type
xGa
1-xAs (x is more than or equal to 0.2) or Ga
0.51In
0.49The Window layer 21 of P;
16), the growth thickness scope is the doping content 1 * 10 of 100nm to 300nm on Window layer 21
18Cm
-3The GaAs contact layer 22 of above N type is used for doing ohmic contact.
Two, application standard prepared three knot lamination GaAs laser photovoltaic cells.
17), the isolation channel 30 of battery is through dry method or wet etching GaAs contact layer 22, Window layer 21, top battery 28; The 3rd tunnel junctions 27, middle battery 26, the second tunnel junctions 25; End battery 25, the first tunnel junctions 23, conductive layer 02; Up to manifesting Semi-insulating GaAs substrate 01, isolate through filling out electrical insulating materials such as polyimides glue, silica again, like Fig. 2.
18), the positive electrode window of battery is through dry method or wet etching GaAs contact layer 22, Window layer 21, top battery 28, the three tunnel junctions 27; Middle battery 26, the second tunnel junctions 25, end battery 25; First tunnel junctions 23 is up to manifesting N type GaAs conductive layer 02, like Fig. 3.
19), prepare AuGe/Ni/Au=35/10/100nm through modes such as electron beam evaporation, thermal evaporation or magnetron sputterings; Ag=1 μ m; The negative electrode 31 of Au=100nm metal material forms ohmic contact with positive electrode 32, like Fig. 3, and Fig. 4.
20), will manifest Window layer 21 except that 22 removals of the GaAs contact layer the GaAs contact layer 22 under the negative electrode 31 through wet etching.
21), the method through chemical vapor deposition techniques, evaporation or sputter mode or plated film prepares antireflective coating 33, application ZnSe/MgF or TiO on exposed Window layer 21
2/ SiO
2Deng making reflection-reducing material, like Fig. 3.
22), preparation contact conductor 34, realize the battery series connection, like Fig. 3.
Be respectively the three knot lamination GaAs laser photovoltaic cell vertical views of 3V, 6V, 9V, 12V shown in Fig. 4 A, Fig. 4 B, Fig. 4 C, Fig. 4 D.
The battery that the three knot lamination GaAs laser photovoltaic battery production methods that accordinging to present embodiment provides are processed is connected to obtain required output voltage through several battery units.The open circuit voltage of one three knot lamination GaAs laser photovoltaic battery unit is about 3V, and each cell device has just the have an appointment output voltage (like 3V, 6V, 9V, 12V) of several volts of plurality of units series connection like this.The laser battery is grown on the Semi-insulating GaAs substrate so that in battery processing technology subsequently, realize electric isolation between each unit, then the positive pole of a battery is linked to each other with the negative pole of another adjacent cell and makes being connected in series of plurality of units.Result of design is that the positive electrode and the negative electrode of battery all drawn from epitaxial surface one side of battery like this; For the shading ratio that reduces electrode, the abundant absorption shine the laser energy on the battery photosurface; Hearth electrode links to each other with the conductive layer of battery bottom in the periphery of battery photosurface.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (10)
1. tie lamination GaAs laser photovoltaic cell for one kind three; It is characterized in that; The substrate that comprises GaAs, and the N type GaAs conductive layer, first tunnel junctions, end battery, second tunnel junctions, middle battery, the 3rd tunnel junctions, top battery, N type Window layer and the GaAs contact layer that on said substrate, set gradually.
2. three knot lamination GaAs laser photovoltaic cells according to claim 1; It is characterized in that further comprise isolation channel, said isolation channel is for to run through to the substrate direction from contact layer; Until manifesting substrate, and be filled with silica or polyimides glue in the said isolation channel.
3. three knot lamination GaAs laser photovoltaic cells according to claim 1; It is characterized in that said first tunnel junctions, second tunnel junctions and the 3rd tunnel junctions include according to N type (Al) GaAs ((Al) GaInP) layer, the N type GaAs (Ga that grow successively away from the substrate direction
0.51In
0.49P) layer, P type (Al) GaAs layer and P type AlGaAs ((Al) GaInP) layer.
4. three knot lamination GaAs laser photovoltaic cells according to claim 1; It is characterized in that; Battery of the said end, middle battery and top battery are the PN junction battery based on GaAs, and separately P district of battery of the said end, middle battery and top battery, N district are all successively away from substrate.
5. three knot lamination GaAs laser photovoltaic cells according to claim 2 is characterized in that further comprise the positive electrode window, said positive electrode window is for running through from contact layer toward the conductive layer direction, until manifesting conductive layer.
6. three knot lamination GaAs laser photovoltaic cells according to claim 1 is characterized in that, comprise that further material is ZnSe/MgF or TiO
2/ SiO
2Antireflective coating, place on the exposed surface of said Window layer.
7. three knot lamination GaAs laser photovoltaic battery preparation methods as claimed in claim 1 is characterized in that comprise step: (1) provides GaAs substrate; (2) on substrate, grow successively N type GaAs conductive layer, first tunnel junctions, end battery, second tunnel junctions, middle battery, the 3rd tunnel junctions, top battery, Window layer and GaAs contact layer.
8. the preparation method of three knot lamination GaAs laser photovoltaic cells according to claim 7; It is characterized in that; Further comprise step: (3) employing dry method or wet etching method to substrate direction etching, until manifesting substrate surface, form isolation channel from contact layer; (4) in isolation channel, fill silica or polyimides glue.
9. the preparation method of three knot lamination GaAs laser photovoltaic cells according to claim 8; It is characterized in that; Further comprise step: (5) adopt dry method or wet etching method from contact layer toward conductive layer direction etching, until manifesting conductive layer, form the positive electrode window.
10. the preparation method of three knot lamination GaAs laser photovoltaic cells according to claim 7 is characterized in that, further comprises step: adopt the GaAs contact layer of dry method or wet etching method etching appointed area, until the surface that exposes Window layer; The antireflective coating of on the exposed surface of Window layer, growing, the method for said growth antireflective coating be in chemical vapor deposition, evaporation and the sputter any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101549981A CN102651416A (en) | 2012-05-18 | 2012-05-18 | Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101549981A CN102651416A (en) | 2012-05-18 | 2012-05-18 | Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102651416A true CN102651416A (en) | 2012-08-29 |
Family
ID=46693371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101549981A Pending CN102651416A (en) | 2012-05-18 | 2012-05-18 | Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102651416A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117286A (en) * | 2013-01-31 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and production method thereof |
| CN103123923A (en) * | 2013-01-31 | 2013-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and manufacturing method thereof |
| CN104332479A (en) * | 2013-07-22 | 2015-02-04 | 天津恒电空间电源有限公司 | Laser powered miniature GaAs cell |
| CN106611805A (en) * | 2015-10-22 | 2017-05-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photovoltaic device and preparation method thereof, multi-junction GaAs laminated laser photovoltaic cell |
| CN107093647A (en) * | 2017-04-06 | 2017-08-25 | 江苏中天科技股份有限公司 | Laser photovoltaic cell and preparation method thereof |
| CN108461568A (en) * | 2018-03-27 | 2018-08-28 | 扬州乾照光电有限公司 | A kind of multijunction solar cell and preparation method thereof with Bragg mirror |
| CN108701738A (en) * | 2016-02-09 | 2018-10-23 | 阿聚尔斯佩西太阳能有限责任公司 | Receiver module |
| WO2018192199A1 (en) * | 2017-04-17 | 2018-10-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multi-junction laminated laser photovoltaic cell and manufacturing method thereof |
| CN111463303A (en) * | 2020-04-21 | 2020-07-28 | 扬州乾照光电有限公司 | High-voltage series structure multi-junction solar cell and manufacturing method thereof |
| US10872887B2 (en) | 2015-05-18 | 2020-12-22 | Azur Space Solar Power Gmbh | Scalable voltage source |
| CN112119506A (en) * | 2018-02-15 | 2020-12-22 | 阿雷光子学公司 | High temperature semiconductor barrier region |
| EP3144982B1 (en) * | 2015-09-19 | 2024-05-15 | AZUR SPACE Solar Power GmbH | Scalable voltage source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102244114A (en) * | 2011-06-22 | 2011-11-16 | 厦门市三安光电科技有限公司 | High-concentration multi-junction solar cell and preparation method thereof |
-
2012
- 2012-05-18 CN CN2012101549981A patent/CN102651416A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102244114A (en) * | 2011-06-22 | 2011-11-16 | 厦门市三安光电科技有限公司 | High-concentration multi-junction solar cell and preparation method thereof |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117286A (en) * | 2013-01-31 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and production method thereof |
| CN103123923A (en) * | 2013-01-31 | 2013-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and manufacturing method thereof |
| CN103117286B (en) * | 2013-01-31 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and preparation method thereof |
| CN103123923B (en) * | 2013-01-31 | 2016-08-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of laser photovoltaic cell and preparation method thereof |
| CN104332479A (en) * | 2013-07-22 | 2015-02-04 | 天津恒电空间电源有限公司 | Laser powered miniature GaAs cell |
| CN104332479B (en) * | 2013-07-22 | 2017-03-08 | 天津恒电空间电源有限公司 | A kind of miniature GaAs battery of laser power supply |
| US10872887B2 (en) | 2015-05-18 | 2020-12-22 | Azur Space Solar Power Gmbh | Scalable voltage source |
| EP3096361B1 (en) * | 2015-05-18 | 2022-03-09 | AZUR SPACE Solar Power GmbH | Scalable voltage source |
| EP3144982B1 (en) * | 2015-09-19 | 2024-05-15 | AZUR SPACE Solar Power GmbH | Scalable voltage source |
| CN106611805A (en) * | 2015-10-22 | 2017-05-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photovoltaic device and preparation method thereof, multi-junction GaAs laminated laser photovoltaic cell |
| CN108701738A (en) * | 2016-02-09 | 2018-10-23 | 阿聚尔斯佩西太阳能有限责任公司 | Receiver module |
| CN107093647A (en) * | 2017-04-06 | 2017-08-25 | 江苏中天科技股份有限公司 | Laser photovoltaic cell and preparation method thereof |
| WO2018192199A1 (en) * | 2017-04-17 | 2018-10-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multi-junction laminated laser photovoltaic cell and manufacturing method thereof |
| CN108735848A (en) * | 2017-04-17 | 2018-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | More knot lamination laser photovoltaic cells and preparation method thereof |
| US11245046B2 (en) * | 2017-04-17 | 2022-02-08 | Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences | Multi-junction tandem laser photovoltaic cell and manufacturing method thereof |
| CN108735848B (en) * | 2017-04-17 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multi-junction laminated laser photovoltaic cell and manufacturing method thereof |
| CN112119506A (en) * | 2018-02-15 | 2020-12-22 | 阿雷光子学公司 | High temperature semiconductor barrier region |
| CN108461568B (en) * | 2018-03-27 | 2020-06-02 | 扬州乾照光电有限公司 | Multi-junction solar cell with Bragg reflector and manufacturing method thereof |
| CN108461568A (en) * | 2018-03-27 | 2018-08-28 | 扬州乾照光电有限公司 | A kind of multijunction solar cell and preparation method thereof with Bragg mirror |
| CN111463303A (en) * | 2020-04-21 | 2020-07-28 | 扬州乾照光电有限公司 | High-voltage series structure multi-junction solar cell and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102651416A (en) | Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof | |
| US10128394B2 (en) | Nanowire-based solar cell structure | |
| CN102651420A (en) | Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof | |
| CN102184999B (en) | NPN-structure-based laser photovoltaic cell and preparation process thereof | |
| KR101193810B1 (en) | Multijunction solar cell and a method for manufacturing the same | |
| CN103975449A (en) | Solar cell | |
| CN103441155A (en) | Solar battery integrating bypass diode and preparation method of solar battery | |
| CN203721752U (en) | Three-junction solar cell with distributed Bragg reflector | |
| CN103247635B (en) | Laser photovoltaic cell of positive-negative-positive structure and preparation method thereof | |
| CN102790117B (en) | GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof | |
| CN104009046B (en) | Laser photovoltaic cell of inverted structure and preparation method thereof | |
| JP2011224749A (en) | Nanostructure and method of manufacturing the same | |
| CN108735848B (en) | Multi-junction laminated laser photovoltaic cell and manufacturing method thereof | |
| CN103199142B (en) | GaInP/GaAs/InGaAs/Ge four-junction solar cell and preparation method thereof | |
| CN108878550A (en) | Multijunction solar cell and preparation method thereof | |
| US20110303270A1 (en) | Solar cell structure having high photoelectric conversion efficiency and method of manufacturing the same | |
| CN103123923B (en) | A kind of laser photovoltaic cell and preparation method thereof | |
| CN103117286B (en) | Laser photovoltaic cell and preparation method thereof | |
| CN102779865A (en) | Silicon-based triple-junction solar battery using germanium as tunneling junction | |
| CN103268893B (en) | Laser photovoltaic cell of NPN structure and preparation method thereof | |
| CN106611805A (en) | Photovoltaic device and preparation method thereof, multi-junction GaAs laminated laser photovoltaic cell | |
| CN104037251A (en) | GaAs laser photovoltaic cell with output voltage being 6V and making method thereof | |
| CN104037178A (en) | GaAs laser photovoltaic cell with output voltage being 5V and making method thereof | |
| CN104576772B (en) | laser photovoltaic cell and manufacturing method thereof | |
| CN104218108A (en) | High-efficiency flexible thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120829 |