CN104037178A - GaAs laser photovoltaic cell with output voltage being 5V and making method thereof - Google Patents

GaAs laser photovoltaic cell with output voltage being 5V and making method thereof Download PDF

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Publication number
CN104037178A
CN104037178A CN201310072324.1A CN201310072324A CN104037178A CN 104037178 A CN104037178 A CN 104037178A CN 201310072324 A CN201310072324 A CN 201310072324A CN 104037178 A CN104037178 A CN 104037178A
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China
Prior art keywords
type
layer
photovoltaic cell
battery
output voltage
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Pending
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CN201310072324.1A
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Chinese (zh)
Inventor
赵春雨
董建荣
于淑珍
赵勇明
李奎龙
孙玉润
曾徐路
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Priority to CN201310072324.1A priority Critical patent/CN104037178A/en
Publication of CN104037178A publication Critical patent/CN104037178A/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a GaAs laser photovoltaic cell with the output voltage being 5V. The laser photovoltaic cell comprises isolating grooves which divide the laser photovoltaic cell into five cell units. The five cell units include a first cell unit and four second cell units arranged around the first cell unit, and the cell units are connected in series. According to the laser photovoltaic cell, a circular cell accounting for one fifth of the total area of the laser photovoltaic cell is arranged in the middle of the laser photovoltaic cell, the area of isolating grooves in the middle of commonly-used laser cells is reduced, absorption of light with high energy density in the center of light spots can be greatly increased, and the photoelectric conversion efficiency of the cell is improved. The GaAs laser photovoltaic cell can be widely used as an efficient laser photovoltaic cell.

Description

Output voltage is GaAs laser photovoltaic cell of 5V and preparation method thereof
Technical field
The present invention relates to a kind of laser photovoltaic cell, relating in particular to a kind of output voltage is GaAs laser photovoltaic cell of 5V and preparation method thereof.
Background technology
Laser energy supplying system is the energy delivery system of an innovation, relies on this system, and the light that LASER Light Source is sent is transported on laser photovoltaic cell by optical fiber, and stable power supply output can be provided.By optical fiber transmission leaded light, be converted into electricity and have more advantage than traditional metal wire and coaxial cable power transmission technology, can be applied in and need to eliminate electromagnetic interference and maybe need, by the situation of electronic device and surrounding environment isolation, in directions such as radio communication, industrial sensor, national defence, aviation, medicine, the energy, have important application.Operation principle and the solar cell of laser photovoltaic cell are similar, just can obtain higher conversion efficiency, and larger output voltage can transmit more energy, and light source adopts the laser of the 790 nm-850 nm wavelength that are applicable to Optical Fiber Transmission.
The laser photovoltaic cell of conventional 5V Voltage-output is generally the circular batteries average mark that meets laser facula size is made into five identical shaped sub-batteries of formed objects, as Fig. 1, like this intersection isolation channel place, center at sub-battery is produced to larger groove, will greatly reduce the area of active area, battery center.The optical energy density penetrating from optical fiber is in addition Gaussian Profile or close to Gaussian Profile, and the energy of light that causes inciding battery center is the strongest, so conventional laser battery structure can reduce the photoelectric conversion efficiency of battery in Fig. 1.
Summary of the invention
The GaAs laser photovoltaic cell structure that object of the present invention provides a kind of output voltage to be about 5V, it can effectively increase battery center active region area, thereby improves the conversion efficiency of laser photovoltaic cell.
For achieving the above object, the invention provides following technical scheme:
The application discloses the GaAs laser photovoltaic cell that a kind of output voltage is 5V, described laser photovoltaic power brick is drawn together isolation channel, this isolation channel is separated into 5 battery units by described photovoltaic cell, comprise 1 the first battery unit, and around 4 the second battery units being located at described the first battery unit surrounding, between battery unit, be connected in series.
As a further improvement on the present invention, described photovoltaic cell comprises N-type conductive layer, P/N junction battery, P type Window layer and the P type contact layer being formed at successively on SI-substrate, and described isolation channel runs through respectively described P type contact layer, P type Window layer, P/N junction battery and N-type conductive layer.
Preferably, described photovoltaic cell also comprises the barrier layer between described N-type conductive layer and P/N junction battery.
Preferably, the cross section of described the first battery unit is circular, and 4 described the second battery unit sectional areas are identical, and its cross section is arc, and 4 described the second battery units form a cylindrical structure around described the first battery unit.
As a further improvement on the present invention, for uniform circular laser facula, the light-receiving area of the first described battery unit and the second battery unit of each equates.
As a further improvement on the present invention, for centrosymmetric non-homogeneous circular laser facula, 4 described the second battery units have identical light-receiving area, and the photoelectric current of the first described battery unit and the second battery unit of each equates.
Correspondingly, disclosed herein as well is a kind of output voltage is the manufacture method of the GaAs laser photovoltaic cell of 5V, comprising:
(1) the N-type conductive layer of growing on SI-substrate;
(2) barrier layer of growing on above-mentioned N-type conductive layer;
(3) grow successively on above-mentioned barrier layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(4) growing P-type Window layer on above-mentioned P/N junction battery;
(5) in above-mentioned P type Window layer, growing P-type contact layer is used as ohmic contact;
(6) successively etching P type contact layer, P type Window layer, P/N junction battery, barrier layer, N-type conductive layer until expose SI-substrate or partial etching SI-substrate to form isolation channel;
(7) prepare positive electrode, negative electrode, antireflection layer and contact conductor, obtain target product.
As a further improvement on the present invention, described conductive layer is N-type doping content 1 * 10 18cm -3above GaAs conductive layer; Described barrier layer is doping content 1 * 10 18cm -3above N-type AlGaAs or AlGaInP barrier layer; Described P type Window layer is that doping content is 1 * 10 18cm -3above Window layer; Described P type contact layer is that doping content is 2 * 10 18cm -3above GaAs contact layer.
As a further improvement on the present invention, in described step (7), etching P type contact layer, P type Window layer, P/N junction battery, N-type barrier layer successively, until expose N-type conductive layer to form negative electrode window, then through this negative electrode window, on N-type conductive layer, prepare negative electrode again, on P type contact layer, prepare positive electrode.
Compared with prior art, the invention has the advantages that:
1. the present invention designs the GaAs laser photovoltaic cell structure that a kind of output voltage is about 5V and can avoid battery center to produce larger groove;
2. the present invention designs the GaAs laser photovoltaic cell structure that a kind of output voltage is about 5V and can absorb more efficiently incident light.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the application, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Figure 1 shows that the structural representation of the laser photovoltaic cell that in prior art, output voltage is 5V;
Figure 2 shows that the structural representation of the laser photovoltaic cell that in the specific embodiment of the invention, output voltage is 5V;
Figure 3 shows that in Fig. 2 along diametric cutaway view.
Embodiment
The embodiment of the present application discloses the GaAs laser photovoltaic cell that a kind of output voltage is 5V, described laser photovoltaic power brick is drawn together isolation channel, this isolation channel is separated into 5 battery units by described photovoltaic cell, comprise 1 the first battery unit, and around 4 the second battery units being located at described the first battery unit surrounding, between battery unit, be connected in series.
Correspondingly, the embodiment of the present application also discloses the manufacture method that a kind of output voltage is the GaAs laser photovoltaic cell of 5V, comprising:
(1) the N-type conductive layer of growing on SI-substrate;
(2) barrier layer of growing on above-mentioned N-type conductive layer;
(3) grow successively on above-mentioned barrier layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(4) growing P-type Window layer on above-mentioned P/N junction battery;
(5) in above-mentioned P type Window layer, growing P-type contact layer is used as ohmic contact;
(6) successively etching P type contact layer, P type Window layer, P/N junction battery, barrier layer, N-type conductive layer until expose SI-substrate or partial etching SI-substrate to form isolation channel;
(7) prepare positive electrode, negative electrode, antireflection layer and contact conductor, obtain target product.
In above-mentioned laser photovoltaic cell, preferred, the material of described SI-substrate, N-type conductive layer and P type contact layer is GaAs, and described P/N junction battery is GaAs battery, and the material of described P type Window layer is Al xga 1-xas (1 > x>=0.2) or Ga 0.51in 0.49p.Wherein, conductive layer is N-type doping content 1 * 10 18cm -3above GaAs conductive layer; Described barrier layer is doping content 1 * 10 18cm -3above N-type AlGaAs or AlGaInP barrier layer; Described P type Window layer is that doping content is 1 * 10 18cm -3above Window layer; Described P type contact layer is that doping content is 2 * 10 18cm -3above GaAs contact layer.
Preferably, positive electrode, negative electrode deposit respectively one or more layers metal annealing by electron beam evaporation, thermal evaporation or magnetron sputtering and form ohmic contact and make on P type contact layer and N-type conductive layer.Positive and negative electrode is realized the series connection of each element cell in photovoltaic cell by the mode of metal pressure-welding or evaporation metal.
Preferably, antireflection layer is ZnSe/MgF or the TiO preparing by chemical vapor deposition techniques or coating machine 2/ SiO 2antireflective coating.
As a kind of available execution mode, each layer in this photovoltaic cell is to adopt MOCVD or the growth of MBE method to form, and wherein the N-type foreign atom of MOCVD is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C; The N-type foreign atom of MBE is Si, Se, S or Te, and P type foreign atom is Be, Mg or C.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
The GaAs laser photovoltaic cell structure that a kind of output voltage in the present embodiment is about 5V meets following condition:
1. between 4 the second sub-batteries 10 and the first sub-battery 20, apply dry method or wet etching isolation channel, and fill;
2. the photoelectric current of 4 the second sub-batteries 10 and the first sub-battery 20 equates;
3. on each second sub-battery 10 and the first sub-battery 20, pass through dry method or wet etching negative electrode window of the same area;
4. for uniform circular laser facula, the light-receiving area on each second sub-battery 10 and the first sub-battery 20 equates;
5. for centrosymmetric non-homogeneous circular laser facula, the light-receiving area of each the second sub-battery 10 equates, designs the light-receiving area of the second sub-battery 10 and the sensitive surface ratio of the first sub-battery 20 simultaneously the electric current of each sub-battery generation is equated;
6. positive and negative electrode is realized the series connection of each element cell in battery by the mode of metal pressure-welding or evaporation metal, forms the GaAs laser photovoltaic battery device that a complete output voltage is about 5 V.
Consult Fig. 2 and Fig. 3, the manufacture craft of chip that this kind of output voltage is about the GaAs laser photovoltaic cell structure of 5V comprises the following steps:
1, by MOCVD or MBE growing epitaxial structure on Semi-insulating GaAs substrate 01, form photovoltaic cell matrix, this epitaxial structure comprises that the height of the lower conductiving layer N-type of battery mixes the PN junction 04 of GaAs layer 02, N-type AlGaAs or AlGaInP barrier layer 03, GaAs, P type Ga 0.51in 0.49p Window layer 05, P type GaAs contact layer 06;
2, in conjunction with shown in Fig. 3, on photovoltaic cell matrix, pass through dry method or wet etching to Semi-insulating GaAs substrate, then isolate by materials such as filler or silica electric insulations, form isolation channel 30;
3, by dry method or wet etching, be etched to successively N-type GaAs conductive layer, form negative electrode window (not shown);
4, by the modes such as electron beam evaporation, thermal evaporation or magnetron sputtering on P type GaAs contact layer 06, prepare the positive electrode of Pd/Zn/Pd/Au=5/10/20/200 nm metal material respectively, the negative electrode of preparing AuGe/Ni/Au=35/10/100 nm metal material on conductive layer 02 forms ohmic contact, the column electrode Au that goes forward side by side thickeies to 2 μ m;
5, by selective corrosion, the contact layer below electrode is removed, application coating machine is prepared TiO 2/ SiO 2antireflection layer;
6, prepare contact conductor, realize battery series connection;
7, after scribing, form single group laser photovoltaic cell chips.
Laser battery of the present invention comprises 4 arc batteries and a circular batteries, the photoelectric current of described 4 arc batteries and circular batteries equates, 4 arc batteries form a unitary circular structure around circular batteries, and 5 sub-batteries realize by being connected in series the output voltage that is about 5V.The present invention is provided with a circular batteries that accounts for the battery gross area 1/5th in the middle of battery, reduces the area of conventional laser battery intermediate isolating groove, can greatly increase the absorption to hot spot middle position high-energy-density light, has improved the photoelectric conversion efficiency of battery.
In other embodiments, in laser photovoltaic cell, PN junction battery also can oppositely arrange; Isolation channel also can sub-battery be unequal cuts apart by 4 second.
It should be noted that, in this article, relational terms such as the first and second grades is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply and between these entities or operation, have the relation of any this reality or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby the process, method, article or the equipment that make to comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or be also included as the intrinsic key element of this process, method, article or equipment.The in the situation that of more restrictions not, the key element being limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
The above is only the application's embodiment; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the application's protection range.

Claims (9)

1. the GaAs laser photovoltaic cell that output voltage is 5V, it is characterized in that: described laser photovoltaic power brick is drawn together isolation channel, this isolation channel is separated into 5 battery units by described photovoltaic cell, comprise 1 the first battery unit, and around 4 the second battery units being located at described the first battery unit surrounding, between battery unit, be connected in series.
2. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 5V, it is characterized in that: described photovoltaic cell comprises N-type conductive layer, P/N junction battery, P type Window layer and the P type contact layer being formed at successively on SI-substrate, and described isolation channel runs through respectively described P type contact layer, P type Window layer, P/N junction battery and N-type conductive layer.
3. the GaAs laser photovoltaic cell that output voltage according to claim 2 is 5V, is characterized in that: described photovoltaic cell also comprises the barrier layer between described N-type conductive layer and P/N junction battery.
4. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 5V, it is characterized in that: the cross section of described the first battery unit is for circular, 4 described the second battery unit sectional areas are identical, and its cross section is arc, 4 described the second battery units form a cylindrical structure around described the first battery unit.
5. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 5V, is characterized in that: for uniform circular laser facula, the light-receiving area of the first described battery unit and the second battery unit of each equates.
6. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 5V, it is characterized in that: for centrosymmetric non-homogeneous circular laser facula, 4 described the second battery units have identical light-receiving area, and the photoelectric current of the first described battery unit and the second battery unit of each equates.
7. the manufacture method of the GaAs laser photovoltaic cell that the arbitrary described output voltage of claim 1 to 6 is 5V, is characterized in that, comprising:
(1) the N-type conductive layer of growing on SI-substrate;
(2) barrier layer of growing on above-mentioned N-type conductive layer;
(3) grow successively on above-mentioned barrier layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(4) growing P-type Window layer on above-mentioned P/N junction battery;
(5) in above-mentioned P type Window layer, growing P-type contact layer is used as ohmic contact;
(6) successively etching P type contact layer, P type Window layer, P/N junction battery, barrier layer, N-type conductive layer until expose SI-substrate or partial etching SI-substrate to form isolation channel;
(7) prepare positive electrode, negative electrode, antireflection layer and contact conductor, obtain target product.
8. the manufacture method of laser photovoltaic cell according to claim 7, is characterized in that: described conductive layer is N-type doping content 1 * 10 18cm -3above GaAs conductive layer; Described barrier layer is doping content 1 * 10 18cm -3above N-type AlGaAs or AlGaInP barrier layer; Described P type Window layer is that doping content is 1 * 10 18cm -3above Window layer; Described P type contact layer is that doping content is 2 * 10 18cm -3above GaAs contact layer.
9. the manufacture method of laser photovoltaic cell according to claim 7, it is characterized in that: in described step (7), etching P type contact layer, P type Window layer, P/N junction battery, N-type barrier layer successively, until expose N-type conductive layer to form negative electrode window, then through this negative electrode window, on N-type conductive layer, prepare negative electrode again, on P type contact layer, prepare positive electrode.
CN201310072324.1A 2013-03-07 2013-03-07 GaAs laser photovoltaic cell with output voltage being 5V and making method thereof Pending CN104037178A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7178154B1 (en) * 2022-06-22 2022-11-25 株式会社京都セミコンダクター optical power converter
JP7178152B1 (en) * 2022-06-30 2022-11-25 株式会社京都セミコンダクター optical power converter

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5342451A (en) * 1990-06-07 1994-08-30 Varian Associates, Inc. Semiconductor optical power receiver
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
CN101431084A (en) * 2006-12-20 2009-05-13 Jds尤尼弗思公司 Multi-segment photovoltaic power converter with a center portion
CN102184999A (en) * 2011-04-02 2011-09-14 中国科学院苏州纳米技术与纳米仿生研究所 NPN-structure-based laser photovoltaic cell and preparation process thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342451A (en) * 1990-06-07 1994-08-30 Varian Associates, Inc. Semiconductor optical power receiver
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
CN101431084A (en) * 2006-12-20 2009-05-13 Jds尤尼弗思公司 Multi-segment photovoltaic power converter with a center portion
CN102184999A (en) * 2011-04-02 2011-09-14 中国科学院苏州纳米技术与纳米仿生研究所 NPN-structure-based laser photovoltaic cell and preparation process thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7178154B1 (en) * 2022-06-22 2022-11-25 株式会社京都セミコンダクター optical power converter
WO2023248372A1 (en) * 2022-06-22 2023-12-28 株式会社京都セミコンダクター Optical power feed converter
JP7178152B1 (en) * 2022-06-30 2022-11-25 株式会社京都セミコンダクター optical power converter
WO2024004151A1 (en) * 2022-06-30 2024-01-04 株式会社京都セミコンダクター Optical power supply converter

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Application publication date: 20140910