CN104009046B - Laser photovoltaic cell of inverted structure and preparation method thereof - Google Patents
Laser photovoltaic cell of inverted structure and preparation method thereof Download PDFInfo
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- CN104009046B CN104009046B CN201310060831.3A CN201310060831A CN104009046B CN 104009046 B CN104009046 B CN 104009046B CN 201310060831 A CN201310060831 A CN 201310060831A CN 104009046 B CN104009046 B CN 104009046B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of laser photovoltaic cell of inverted structure, described photovoltaic cell includes the second dielectric substrate and the epitaxial layer in second dielectric substrate, and described epitaxial layer includes negative electrode, N-type conductive layer, P/N junction batteries, p-type Window layer and the p-type contact layer being sequentially formed in second dielectric substrate.Disclosed herein as well is the preparation method of the laser battery of above-mentioned inverted structure.The laser battery of the application, greatly reduces series resistance, improves the heat dispersion of battery, so as to improve the conversion efficiency of photovoltaic cell, and the first substrate peeled off is repeatable to be utilized, and reduces cost.
Description
Technical field
The invention belongs to laser photovoltaic cell and its making side in photovoltaic cell field, more particularly to a kind of inverted structure
Method.
Background technology
Laser power supply system is the energy delivery system of an innovation, by this system, the light that LASER Light Source is sent
It is transported to by optical fiber in laser photovoltaic cell, stable power supply output can be provided.Electric ratio is converted into by fiber optic conduction light
Traditional metal wire and coaxial cable power transmission technology has more advantages, and can apply is needing to eliminate electromagnetic interference or needing
In the case that electronic device is isolated with surrounding environment, in radio communication, industrial sensor, national defence, aviation, medicine, energy
There is important application in the directions such as source.The operation principle of laser photovoltaic cell is similar with solar cell, simply can obtain higher
Conversion efficiency, bigger output voltage can transmit more energy, light source is using 790 nm -850 for being adapted to optical fiber transmission
The laser of nm wavelength.
GaAs PN junction batteries can be used for 808 nm laser energy being converted to electric energy, as in laser power supply system
Laser battery, but the open-circuit voltage of GaAs batteries only be 1 V, it is impossible to be directly used in the electricity in electronic circuit
Source.The laser photovoltaic cell of early stage is that GaAs PN junction batteries are grown on half-insulating GaAs substrate, by etching isolated groove
Mode the battery chip of unit area is isolated, then by way of lead by several single junction cell units series connection obtain
High voltage is exported, after series connection, and series resistance will be one of topmost factor of influence battery performance.Series resistance is main by outer
Prolong sheet resistance, positive and negative electrode contact resistance, positive and negative electrode metal the bulk resistor composition of layer.The sheet resistance of epitaxial layer is battery
Topmost part in series resistance, is mainly determined by growth technique；Electrodes and electrode metal bulk resistor are main
Determined by device preparation technology and electrode structural designs.It is inversely proportional because resistance is directly proportional to length with sectional area, i.e., electric current leads to
The distance resistance crossed is larger, and photo-generated carrier transmission range is long, causes sheet resistance big, and series resistance is increased, by reduction electricity
The performance in pond.Used in the past on SI-substrate and grow conductive layer, and the mode of etching window significantly increases series resistance.
In view of this, it is necessary to which a kind of new laser photovoltaic cell is provided.
The content of the invention
It is an object of the invention to for it is of the prior art it is not enough there is provided a kind of laser photovoltaic cell of inverted structure and
Its preparation method, greatly reduces series resistance, improves the heat dispersion of battery, so as to improve the conversion effect of photovoltaic cell
Rate, the first substrate peeled off is repeatable to be utilized, and reduces cost.
To achieve the above object, the present invention provides following technical scheme：
This application discloses a kind of laser photovoltaic cell of inverted structure, described photovoltaic cell includes the second dielectric substrate
And the epitaxial layer in second dielectric substrate, described epitaxial layer is including being sequentially formed in second dielectric substrate
On negative electrode, N-type conductive layer, P/N junction batteries, p-type Window layer and p-type contact layer.
As a further improvement on the present invention, in addition to the potential barrier between the N-type conductive layer and P/N junction batteries
Layer.
It is preferred that, the barrier layer is the AlGaAs ((Al) GaInP) of N-type, and AlGaAs ((Al) GaInP) refers to AlGaAs
Or AlGaAs (AlGaInP) (GaInP).
As a further improvement on the present invention, the material of described N-type conductive layer and p-type contact layer is GaAs, described
P/N junction batteries be GaAs batteries.
As a further improvement on the present invention, the material of the p-type Window layer is AlxGa1-xAs (1 ＞ x >=0.2) or
Ga0.51In0.49P。
As a further improvement on the present invention, in addition to isolation channel, the photovoltaic cell is separated into many by the isolation channel
Be connected in series between individual battery unit, battery unit, described isolation channel extend through the p-type contact layer, p-type Window layer,
P/N junction batteries, N-type conductive layer and negative electrode.
As a further improvement on the present invention, in addition to positive electrode, the positive electrode is formed on the contact layer.
Disclosed herein as well is a kind of preparation method of the laser photovoltaic cell of inverted structure, including：
（1）Growth is used as the sacrifice layer for peeling off the first substrate on the first substrate；
（2）Growing P-type contact layer is used as Ohmic contact, and cutting as selective corrosion sacrifice layer on above-mentioned sacrifice layer
Only layer；
（3）The p-type Window layer grown on above-mentioned contact layer；
（4）Growing P-type absorbed layer and N-type absorbed layer form P/N junction batteries successively in aforementioned p-type Window layer；
（5）N-type barrier layer is grown on above-mentioned P/N junction batteries；
（6）N-type conductive layer is grown on above-mentioned barrier layer；
（7）Negative electrode is prepared on N-type conductive layer, and annealing forms Ohmic contact；
（8）Bonding/adhesion arrangement layer is prepared between negative electrode surface and the second insulated substrate surface using bonding technology,
It is attached onto by bonding pattern/bonding mode；
（9）Sacrifice layer is removed by way of wet etching, the first substrate is peeled off, is formed in the second dielectric substrate
The laser photovoltaic cell matrix of upper inverted structure；
（10）According to battery standard technique, isolation channel, positive electricity are prepared on the photovoltaic cell matrix formed by abovementioned steps
Pole, antireflection layer and contact conductor, obtain target product.
As a further improvement on the present invention, the conductive layer is n-type doping concentration 1 × 1018 cm-3GaAs above is led
Electric layer；The barrier layer is doping concentration 1 × 1018 cm-3N-type AlGaAs ((Al) GaInP) barrier layer above；The p-type
Window layer is doping concentration 1 × 1018 cm-3Window layer above；The p-type contact layer is doping concentration 2 × 1018 cm-3
GaAs contact layers above.
As a further improvement on the present invention, the step（10）In, it is sequentially etched p-type contact layer, p-type Window layer, P/N
Junction battery, N-type barrier layer, N-type conductive layer and negative electrode are until expose the second dielectric substrate or the dielectric substrate of partial etching second
To form isolation channel.
As a further improvement on the present invention, the step（10）In, it is sequentially etched p-type contact layer, p-type Window layer, P/N
Junction battery, N-type barrier layer and N-type conductive layer, until exposing negative electrode to form negative electrode window, are prepared on p-type contact layer
Positive electrode.Positive electrode is that one or more layers metal is deposited on p-type contact layer by electron beam evaporation, thermal evaporation or magnetron sputtering
And annealing forms Ohmic contact and is made.Positive and negative electrode realizes photovoltaic cell by way of metal pressure-welding or evaporation metal
The series connection of middle each unit battery.
As a further improvement on the present invention, antireflective coating is also formed with Window layer, antireflective coating is by chemical gas
ZnSe/MgF or TiO prepared by phase deposition technology or coating machine2/SiO2Antireflective coating.
As a kind of available embodiment, each layer in the photovoltaic cell is to grow shape using MOCVD or MBE methods
Into, wherein MOCVD n-type doping atom is Si, Se, S or Te, and p-type foreign atom is Zn, Mg or C；MBE n-type doping is former
Son is Si, Se, S or Te, and p-type foreign atom is Be, Mg or C.
Compared with prior art, the advantage of the invention is that：
1. the inverted structure photovoltaic cell that the present invention is designed is by there is several unit series connection to may produce up to the output of the three ten-day period of hot season
Voltage.
2. the novel inverted structure that the present invention is designed improves the heat dispersion of battery to be effectively reduced series resistance,
Greatly improve the performance of device.
Utilized 3. the first substrate peeled off is repeatable, greatly reduce cost.
Brief description of the drawings
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 show the structural representation of the matrix of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention；
Fig. 2 show the matrix bonding of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention and to first
The schematic diagram that substrate is peeled off；
Fig. 3 show the schematic diagram of the isolation channel of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention；
Fig. 4 show the sectional view of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention；
Fig. 5 show the top view of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention.
Embodiment
In view of many deficiencies of the prior art, how to improve parallel resistance, reduce series resistance, increase laser battery
Conversion efficiency, and solve corresponding production technology and be significant.
The embodiment of the present application discloses a kind of laser photovoltaic cell of inverted structure, and it is exhausted that described photovoltaic cell includes second
Edge substrate and the epitaxial layer in second dielectric substrate, described epitaxial layer are exhausted including being sequentially formed in described second
Negative electrode, N-type conductive layer, P/N junction batteries, p-type Window layer and p-type contact layer on edge substrate.
Correspondingly, disclosed herein as well is a kind of preparation method of the laser photovoltaic cell of inverted structure, including：
（1）Growth is used as the sacrifice layer for peeling off the first substrate on the first substrate；
（2）Growing P-type contact layer is used as Ohmic contact, and cutting as selective corrosion sacrifice layer on above-mentioned sacrifice layer
Only layer；
（3）The p-type Window layer grown on above-mentioned contact layer；
（4）Growing P-type absorbed layer and N-type absorbed layer form P/N junction batteries successively in aforementioned p-type Window layer；
（5）N-type barrier layer is grown on above-mentioned P/N junction batteries；
（6）N-type conductive layer is grown on above-mentioned barrier layer；
（7）Negative electrode is prepared on N-type conductive layer, and annealing forms Ohmic contact；
（8）Bonding/adhesion arrangement layer is prepared between negative electrode surface and the second insulated substrate surface using bonding technology,
It is attached onto by bonding pattern/bonding mode；
（9）Sacrifice layer is removed by way of wet etching, the first substrate is peeled off, is formed in the second dielectric substrate
The laser photovoltaic cell of upper inverted structure；
（10）According to battery standard technique, isolation channel, positive electricity are prepared on the photovoltaic cell matrix formed by abovementioned steps
Pole, antireflection layer and contact conductor, obtain target product.
It is preferred that, abovementioned steps（7）In be utilized on GaAs conductive layers and prepare negative electrode, and anneal to form ohm and connect
Touch, wherein the extremely necessary metal ohmic contact of negative electricity and carry out electrode thickening；Abovementioned steps（9）In be by wet etching
Mode removes sacrifice layer, and the first substrate is peeled off, and the selective corrosion liquid used only corrodes to AlAs sacrifice layers,
To battery other materials structure without corrosion；After p-type contact layer forms foregoing positive electrode, the metal will not be also distributed in
Contact layer immediately below electrode is removed；The ZnSe/MgF that foregoing antireflection layer is prepared by chemical vapor deposition techniques or coating machine
Or TiO2/SiO2Antireflective coating.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, detailed retouch is carried out to the technical scheme in the embodiment of the present invention
State, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on the present invention
In embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
Refering to Fig. 1-5, the manufacture craft of the GaAs laser photovoltaic cell preparation methods of inverted structure comprises the following steps：
1st, using the first GaAs substrates 01, thickness is used as substrate growth GaAs laser photovoltaics in 200 to 500 microns
Battery structure material；
2nd, into MOCVD or MBE growth rooms, one layer of 5-100nm AlAs sacrifice layers 02 are first grown；
3rd, 100-300 nm doping concentration 1 × 10 is grown in AlAs sacrifice layers 0218 cm-3The GaAs of p-type above connects
Contact layer 03, and it is used as the cutoff layer of corrosion sacrifice layer；
4th, 1000-3000 nm doping concentration 1 × 10 is grown on GaAs contact layers 0318 cm-3P-type above
AlxGa1-xAs (1 ＞ x >=0.2) or Ga0.51In0.49P Window layers 04；
5th, the doping concentration that 100-600 nm p-type is grown in Window layer 04 is 5 × 1016-1×1018 cm-3GaAs
Absorbed layer 05, as the launch site of GaAs solar cells, regrowth 2500-3500 nm n-type doping concentration is 1 × 1017-4
×1018 cm-3GaAs absorbed layers 06, be used as the base of GaAs solar cells；Form a PN junction battery 09；
6th, doping concentration 1 × 10 is grown on PN junction battery 0918 cm-3N-type AlGaAs ((Al) GaInP) gesture above
Barrier layer 07, and it is used as the back surface field layer of GaAs batteries；
7th, one layer of 1000-5000 nm N-type GaAs conductive layers 08 are grown on barrier layer 07, doping concentration is up to 1 ×
1018 -1×1019 cm-3；
8th, AuGe/Ni/Au is prepared on GaAs conductive layers 08 by modes such as electron beam evaporation, thermal evaporation or magnetron sputterings
The formation Ohmic contact of negative electrode 11 of the nm metal materials of=35/10/100 nm, Ag=1 μm and Au=100, and Au is carried out to it
=200-1000 nm metal electrode thickeies；
9th, bonding/adhesion arrangement is prepared between the surface of negative electrode 11 and the surface of the second dielectric substrate 12 using bonding technology
Layer, is attached onto by bonding pattern/bonding mode, and the second dielectric substrate 12 is preferably ceramic substrate or insulation PI linings
Bottom；
10th, sacrifice layer 02 is removed by way of wet etching, the first substrate 01 is peeled off, the second insulation lining is formed
The laser photovoltaic cell of inverted structure on bottom 12, is so far made photovoltaic cell matrix；
11st, p-type contact layer 03, p-type Window layer 04, P/N junction batteries 09, N-type potential barrier are sequentially etched by wet method or dry method
Layer 07, N-type conductive layer 08, negative electrode 11 until expose or the second dielectric substrate of partial etching 12 mode in photovoltaic cell matrix
Middle shape isolation channel 13；
12nd, p-type contact layer 03, p-type Window layer 04, P/N junction batteries 09, N-type are sequentially etched by dry or wet etch
Barrier layer 07, N-type conductive layer 08 form negative electrode window up to exposing the reinforcement of negative electrode 11；
13rd, Pd/Zn/Pd/ is prepared by modes such as electron beam evaporation, thermal evaporation or magnetron sputterings on p-type contact layer 03
The formation Ohmic contact of positive electrode 14 of the nm metal materials of Au=5/10/20/200 nm, Ag=1 μm and Au=100；
14th, contact layer 03 of the positive electrode 14 beyond following is removed by wet etching；
15th, antireflection layer 15 is prepared in p-type Window layer 04 by chemical vapor deposition techniques or coating machine, applied
ZnSe/MgF or TiO2/SiO2Etc. reflection-reducing material, such as Fig. 4；
16th, contact conductor 16 is prepared, the series connection of each unit battery, such as Fig. 5 is realized.
The laser battery of the present invention is by several battery cells in series with the output voltage needed for obtaining, wherein GaAs batteries
Open-circuit voltage be about 1 V, so each cell device has the series connection of several units just to have the output voltages (such as 6 V) of about several volts.
The laser photovoltaic cell of the inverted structure of the application include being grown in battery epitaxial layer on the first GaAs substrates and
Second dielectric substrate carries out bonding chip, and the first substrate is peeled off by wet etching AlAs sacrifice layers, forms second exhausted
The laser photovoltaic cell structure of inverted structure on edge substrate.The series resistance of this inverted structure photovoltaic cell is low, output voltage
Height, improves the heat dispersion of battery, improves the photoelectric transformation efficiency of battery, and the first substrate peeled off is repeatable to be utilized,
Cost is reduced, efficient laser photovoltaic cell extensive use can be used as.
It will be readily apparent, in other embodiments, laser photovoltaic cell also can be separated into any amount by isolation channel
Battery unit, such as by one isolation channel, 2 battery units of formation, isolation channel 4 battery units of formation that 2 roads intersect
Deng.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
1. a kind of laser photovoltaic cell of inverted structure, it is characterised in that：Described photovoltaic cell include the second dielectric substrate with
And the epitaxial layer in second dielectric substrate, described epitaxial layer is including being sequentially formed in second dielectric substrate
Negative electrode, N-type conductive layer, P/N junction batteries, p-type Window layer, p-type contact layer and be formed on the p-type contact layer just
Electrode, wherein, the material of the negative electrode is AuGe/Ni/Au=35/10/100 nm, the nm of Ag=1 μm and Au=100, and is passed through
Cross Au=200-1000 nm thickening.
2. the laser photovoltaic cell of inverted structure according to claim 1, it is characterised in that：Also include being located at the N-type
Barrier layer between conductive layer and P/N junction batteries.
3. the laser photovoltaic cell of inverted structure according to claim 2, it is characterised in that：The barrier layer is N-type
AlGaAs, GaInP or AlGaInP.
4. the laser photovoltaic cell of inverted structure according to claim 1, it is characterised in that：Described N-type conductive layer and P
The material of type contact layer is GaAs, and described P/N junction batteries are GaAs batteries.
5. the laser photovoltaic cell of inverted structure according to claim 1, it is characterised in that：The material of the p-type Window layer
Expect for AlxGa1-xAs (1 ＞ x >=0.2) or Ga0.51In0.49P。
6. the laser photovoltaic cell of inverted structure according to claim 1, it is characterised in that：Also include isolation channel, it is described
The photovoltaic cell is separated between multiple battery units, battery unit and is connected in series by isolation channel, described isolation channel difference
Through the p-type contact layer, p-type Window layer, P/N junction batteries, N-type conductive layer and negative electrode.
7. the preparation method of the laser photovoltaic cell of any described inverted structure of claim 1 to 6, it is characterised in that including：
（1）Growth is used as the sacrifice layer for peeling off the first substrate on the first substrate；
（2）Growing P-type contact layer is used as Ohmic contact, and the cut-off as selective corrosion sacrifice layer on above-mentioned sacrifice layer
Layer；
（3）The p-type Window layer grown on above-mentioned contact layer；
（4）Growing P-type absorbed layer and N-type absorbed layer form P/N junction batteries successively in aforementioned p-type Window layer；
（5）N-type barrier layer is grown on above-mentioned P/N junction batteries；
（6）N-type conductive layer is grown on above-mentioned barrier layer；
（7）Negative electrode is prepared on N-type conductive layer, and annealing forms Ohmic contact；
（8）Bonding/adhesion arrangement layer is prepared between negative electrode surface and the second insulated substrate surface using bonding technology, is passed through
Bonding pattern/bonding mode is attached onto；
（9）Sacrifice layer is removed by way of wet etching, the first substrate is peeled off, is formed and is fallen in the second dielectric substrate
The laser photovoltaic cell matrix of assembling structure；
（10）According to battery standard technique, isolation channel, positive electrode are prepared on the photovoltaic cell matrix formed by abovementioned steps, is subtracted
Reflecting layer and contact conductor, obtain target product.
8. the preparation method of the laser photovoltaic cell of inverted structure according to claim 7, it is characterised in that：The conduction
Layer is n-type doping concentration 1 × 1018 cm-3GaAs conductive layers above；The barrier layer is doping concentration 1 × 1018 cm-3More than
N-type AlGaAs, GaInP or AlGaInP barrier layers；The p-type Window layer is doping concentration 1 × 1018 cm-3Window above
Mouth layer；The p-type contact layer is doping concentration 2 × 1018 cm-3GaAs contact layers above.
9. the preparation method of the laser photovoltaic cell of inverted structure according to claim 7, it is characterised in that：The step
（10）In, be sequentially etched p-type contact layer, p-type Window layer, P/N junction batteries, N-type barrier layer, N-type conductive layer and negative electrode until
Expose the second dielectric substrate or the dielectric substrate of partial etching second to form isolation channel.
10. the preparation method of the laser photovoltaic cell of inverted structure according to claim 7, it is characterised in that：The step
Suddenly（10）In, p-type contact layer, p-type Window layer, P/N junction batteries, N-type barrier layer and N-type conductive layer are sequentially etched, until exposing
Negative electrode prepares positive electrode to form negative electrode window on p-type contact layer.
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| CN105390566B (en) * | 2014-09-03 | 2017-07-18 | 新疆中兴能源有限公司 | A kind of upside-down mounting solar battery chip manufacture method |
| CN104347359B (en) * | 2014-09-18 | 2017-06-06 | 厦门乾照光电股份有限公司 | A kind of efficient substrate desquamation method |
| CN111048602B (en) * | 2019-11-29 | 2021-11-16 | 上海空间电源研究所 | Laser charging efficient solar cell based on interconnection technology and preparation method thereof |
| CN115020547A (en) * | 2022-07-12 | 2022-09-06 | 中国电子科技集团公司第十八研究所 | Forming process of laser photovoltaic device |
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| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102800726A (en) * | 2012-09-04 | 2012-11-28 | 天津三安光电有限公司 | Flip solar battery chip and preparation method thereof |
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| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102800726A (en) * | 2012-09-04 | 2012-11-28 | 天津三安光电有限公司 | Flip solar battery chip and preparation method thereof |
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