CN102651420A - Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof - Google Patents
Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof Download PDFInfo
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- CN102651420A CN102651420A CN2012101549784A CN201210154978A CN102651420A CN 102651420 A CN102651420 A CN 102651420A CN 2012101549784 A CN2012101549784 A CN 2012101549784A CN 201210154978 A CN201210154978 A CN 201210154978A CN 102651420 A CN102651420 A CN 102651420A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention provides a double-junction GaAs lamination laser photovoltaic cell which comprises a GaAs substrate, and an N-type GaAs conducting layer, a first tunnel junction, a P-type AlGaAs ((Al)GaInP) first barrier layer, a bottom battery, a second tunnel junction, a P-type AlGaAs ((Al)GaInP) second barrier layer, a top battery, an AlGaAs (Ga0.51In0.49P) window layer and a GaAs contact layer that are grown on the substrate sequentially, and further comprises an isolation trench, wherein the isolation trench penetrates through the GaAs contact layer till being exposed out of the substrate; and silicon oxide or polyimide glue is filled in the isolation trench. The invention further provides a fabrication method of the double-junction GaAs lamination laser photovoltaic cell, which comprises the steps of (1) providing a substrate, (2) allowing the conducting layer, the first tunnel junction, the first barrier layer, the bottom battery, the second tunnel junction, the second barrier layer, the top battery, the window layer and the GaAs contact layer to be grown on the substrate sequentially, (3) etching the GaAs contact layer till the surface of the substrate is exposed by a dry etching method or a wet etching method, to form the isolation trench, and (4) filling the isolation trench with the silicon oxide or polyimide glue.
Description
Technical field
The present invention relates to laser photovoltaic field of batteries, relate in particular to binode GaAs lamination laser photovoltaic cell and preparation method thereof.
Background technology
The laser energy supplying system is the energy delivery system of an innovation, relies on this system, and the light that LASER Light Source is sent passes through fibre to the laser photovoltaic cell, and stable power output can be provided.Than traditional metal wire and coaxial cable power transmission technology more advantage is arranged for electricity through the fiber optic conduction phototransformation; Can be applied in need to eliminate electromagnetic interference maybe need situation with electronic device and surrounding environment isolation under; In radio communication, industrial sensor, national defence; Aviation, directions such as medicine, the energy have important application.The operation principle and the solar cell of laser photovoltaic cell are similar; Just have to obtain higher conversion efficiency, bigger output voltage can transmit more energy; Different with general solar cell is that light source adopts the laser of the 790 nm-850 nm wavelength that is fit to Optical Fiber Transmission.
GaAs is an III/V family semi-conducting material; Energy gap Eg under the room temperature is 1.428 eV; GaAs PN junction battery can be used for converting the laser energy of 808 nm into electric energy; As the laser battery in the laser energy supplying system, but to have only be 1 V to the open circuit voltage of GaAs battery, can not directly be used for the power supply of electronic device circuit.Early stage laser photovoltaic cell be with several single junction cell units in series to obtain required output voltage, through the mode of etching isolated groove the battery chip of unit are is isolated, again through the lead-in wire mode with several single junction cell units in series.The more effective light-receiving areas of battery that will cause of the number of isolated groove are just more little; We propose each battery unit is designed to the binode battery structure through the tunnel junctions connection for head it off; Can reduce the influence of isolated groove like this; Increase effective light-receiving area of laser light battery, reduce the interconnected series resistance of battery, help to improve the performance of device.
Summary of the invention
Technical problem to be solved by this invention is that binode GaAs lamination laser photovoltaic cell and preparation method thereof is provided.
In order to address the above problem; The invention provides a kind of binode GaAs lamination laser photovoltaic cell; Comprise the GaAs substrate, and conductive layer, first tunnel junctions, end battery, second tunnel junctions, top battery, the AlGaAs (Ga of the N type GaAs that on said substrate, sets gradually
0.51In
0.49P) Window layer and GaAs contact layer.
Described binode GaAs lamination laser photovoltaic cell further comprises isolation channel, and said isolation channel is for to run through to the substrate direction from the GaAs contact layer, until manifesting substrate, and is filled with silica or polyimides glue in the said isolation channel.
Said first tunnel junctions, second tunnel junctions include according to the N type GaAs (Ga that sets gradually away from the substrate direction
0.51In
0.49P) layer, P type (Al) GaAs layer and P type AlGaAs ((Al) GaInP) layer.
Battery of the said end, top battery are the PN junction battery based on GaAs, and separately P district of battery of the said end and top battery, N district are all successively away from substrate.
Described binode GaAs lamination laser photovoltaic cell further comprises the positive electrode window, and said positive electrode window is for running through from the GaAs contact layer toward the conductive layer direction, until manifesting conductive layer.
Described binode GaAs lamination laser photovoltaic cell further comprises placing the antireflective coating of ZnSe/MgF or TiO2/SiO2 on the exposed surface of said Window layer.
In order to address the above problem, the present invention also provides a kind of as above-mentioned binode GaAs lamination laser photovoltaic battery preparation method, and comprise step: (1) provides GaAs substrate; (2) on substrate, grow successively conductive layer, first tunnel junctions, end battery, second tunnel junctions, top battery, Window layer and GaAs contact layer;
The preparation method of described binode GaAs lamination laser photovoltaic cell further comprises step: (3) employing dry method or wet etching method to substrate direction etching, until manifesting substrate surface, form isolation channel from the GaAs contact layer; (4) in isolation channel, fill silica or polyimides glue.
The preparation method of described binode GaAs lamination laser photovoltaic cell further comprises step: (5) employing dry method or wet etching method to substrate direction etching, until manifesting conductive layer surface, form the positive electrode window from the GaAs contact layer.
The preparation method of described binode GaAs lamination laser photovoltaic cell further comprises step: adopt the GaAs contact layer of dry method or wet etching method etching appointed area, until the surface that manifests Window layer; The antireflective coating of on the exposed surface of Window layer, growing, the method for said growth antireflective coating be in chemical vapor deposition, evaporation and the sputter any one.
The present invention provides binode GaAs lamination laser photovoltaic cell and preparation method thereof, and advantage is:
1. binode GaAs lamination laser photovoltaic cell has realized that there are two battery series connection each unit, has reduced series resistance, helps the raising of battery efficiency;
2. among the present invention,, reduced the ratio of the shared light-receiving area of isolated groove, reduced the loss of incident light on isolated groove, helped the raising of battery efficiency for the photovoltaic cell of equal open circuit voltage;
3. among the present invention; GaAs contact layer and conductive layer all adopt N type GaAs, and a step can be accomplished the evaporation or the plating thickening of the metal ohmic contact of positive and negative electrode in battery process, reduces a step photoetching, a step stripping technology; Reduce by a reticle, save the processes time and reduce cost;
4. binode GaAs lamination laser photovoltaic cell provided by the invention can obtain the output voltage of about 2N volt through N units in series.
Description of drawings
Fig. 1 is the schematic cross-section of binode GaAs lamination laser photovoltaic cell first embodiment provided by the invention;
Fig. 2 is the binode GaAs lamination laser photovoltaic cell first embodiment isolation moat structure schematic cross-section provided by the invention;
Fig. 3 is the product structure schematic cross-section of binode GaAs lamination laser photovoltaic cell first embodiment provided by the invention;
Fig. 4 A to Fig. 4 D is respectively the vertical view of 2V provided by the invention, 4V, 6V, 12V binode GaAs lamination laser photovoltaic cell.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to binode GaAs lamination laser photovoltaic cell provided by the invention and preparation method thereof.
First embodiment
Fig. 1 is the schematic cross-section of said binode GaAs lamination laser photovoltaic cell first embodiment.
Fig. 2 is the said binode GaAs lamination laser photovoltaic cell first embodiment isolation moat structure schematic cross-section.
This execution mode provides a kind of binode GaAs lamination laser photovoltaic cell; Comprise Semi-insulating GaAs substrate 01, and on said substrate 01 conductive layer 02 of the N type GaAs of growth, first tunnel junctions 17, end battery 18, second tunnel junctions 19, top battery 20, Window layer 15 and GaAs contact layer 16 successively.
Said binode GaAs lamination laser photovoltaic cell further comprises isolation channel 22; Said isolation channel 22 is for to run through to substrate 01 direction from GaAs contact layer 16; Until manifesting substrate 01, and be filled with silica or polyimides glue (Polyimide is called for short PI glue) in the said isolation channel 22.
The silica or the polyimides glue of in isolation channel 22, filling in this execution mode, and the invention is not restricted to this, filler also can comprise the glue of the light sensitivity of other similar PI glue in isolation channel 22.
Said first tunnel junctions 17 comprises according to the N type of growing successively away from a substrate direction GaAs (Ga
0.51In
0.49P) first barrier layer 06 of layer 04, P type first (Al) GaAs layer 05 and P type AlGaAs ((Al) GaInP).
Said second tunnel junctions 19 comprises according to the N type of growing successively away from substrate 01 direction the 2nd GaAs (Ga
0.51In
0.49P) second barrier layer 12 of layer 10, P type second (Al) GaAs layer 11 and P type AlGaAs ((Al) GaInP);
As optional execution mode, said first tunnel junctions 17 further comprises the 3rd barrier layer 03 of N type AlGaAs ((Al) GaInP), is positioned at conductive layer 02 and N type the one GaAs (Ga
0.51In
0.49P) between the layer 04.
As optional execution mode, said second tunnel junctions 19 further comprises the 4th barrier layer 09 of N type AlGaAs ((Al) GaInP), is positioned at end battery 18 and N type the 2nd GaAs (Ga
0.51In
0.49P) between the layer 10, also can be used as the Window layer of end battery 18.
Wherein, the AlGaAs that is occurred among the application ((Al) GaInP) is AlGaAs or Al
xGa
1-xThe meaning of InP, wherein x is more than or equal to 0 and smaller or equal to 1.
Wherein, the GaAs (Ga that is occurred among the application
0.51In
0.49P) be GaAs or Ga
0.51In
0.49The meaning of P.
Wherein, (Al) GaAs that is occurred among the application is Al
xGa
1-xThe meaning of As, wherein x is more than or equal to 0 and smaller or equal to 1.
Battery of the said end 18 is the PN junction battery based on GaAs, comprises a P district 07 of P type GaAs absorbed layer and a N district 08 of N type GaAs absorbed layer, and a P district 07 of end battery 18, a N district 08 are all successively away from substrate 01.
Said Window layer 15 is AlGaAs (Ga
0.51In
0.49P) layer.
Said top battery 20 is the PN junction battery based on GaAs, comprises the 2nd P district 13 of P type GaAs absorbed layer and the 2nd N district 14 of N type GaAs absorbed layer, and the 2nd P district 13 of top battery 20, the 2nd N district 14 are all successively away from substrate 01.
Said GaAs contact layer 16 is the GaAs of N type.
The series resistance for preparing battery according to the structure by Fig. 1 is lower than the series resistance of a plurality of single PN kink structure batteries that under identical voltage output situation, connect through lead-in wire; Helping battery receives higher optical power density and improves battery efficiency; Therefore said structure has the conversion efficiency higher than PN junction battery, has good actual application and is worth.
Fig. 3 is the product structure schematic cross-section of binode GaAs lamination laser photovoltaic cell first embodiment provided by the invention.
Said binode GaAs lamination laser photovoltaic battery product further comprises the positive electrode window on said binode GaAs lamination laser photovoltaic battery structure, said positive electrode window runs through said GaAs contact layer 16 successively until manifesting conductive layer 02.
Said binode GaAs lamination laser photovoltaic battery product further comprises positive electrode 24 and negative electrode 23, and said positive electrode 24 places on the exposed surface of said positive electrode window conductive layer 02; Said negative electrode 23 places on the exposed surface of Window layer 15.
Further comprise ZnSe/MgF or TiO
2/ SiO
2 Antireflective coating 25, place the exposed surface of said Window layer 15.
Second embodiment
Preparation structure such as the described binode GaAs of Fig. 1 lamination laser photovoltaic cell comprise step:
(1) growth N type GaAs conductive layer 02 on Semi-insulating GaAs substrate 01;
(2) growth N type AlGaAs ((Al) GaInP) the 3rd barrier layer 03 on N type GaAs conductive layer 02;
(3) on the 3rd barrier layer 03, grow N type doping content greater than 1 * 10
19Cm
-3A GaAs (Ga
0.51In
0.49P) layer 04, regrowth P type doping content is greater than 1 * 10
19Cm
-3First (Al) GaAs layer 05, form first tunnel junctions 17;
(4) P type AlGaAs ((Al) GaInP) first barrier layer 06 of growth first tunnel junctions 17 on first (Al) GaAs layer 05 also can be used as the back of the body field layer of end battery 18;
(5) a P district 07 of growing P-type GaAs absorbed layer on above-mentioned first barrier layer 06, a N district 08 of growth N type GaAs absorbed layer forms a PN junction, as end battery 18 in a P district 07 of P type GaAs absorbed layer;
(6) the 4th barrier layer 09 of growth N type AlGaAs ((Al) GaInP) on end battery 18;
(7) growth N type doping content 1 * 10 on the 4th barrier layer 09
19Cm
-3The 2nd above GaAs (Ga
0.51In
0.49P) layer 10, regrowth P type doping content 1 * 10
19Cm
-3Above second (Al) GaAs layer 11 forms second tunnel junctions 19;
(8) second barrier layer 12 of P type AlGaAs ((Al) GaInP) of growth second tunnel junctions 19 on second (Al) GaAs layer 11 also can be used as the back of the body field layer of top battery 20;
(9) the 2nd P district 13 of growing P-type GaAs absorbed layer on above-mentioned second barrier layer 12, the 2nd N district 14 of growth N type GaAs absorbed layer forms a PN junction, as top battery 20 in the 2nd P district 13;
(10) growth N type Al in the 2nd N district 14
xGa
1-xAs (Ga
0.51In
0.49P) Window layer 15;
(11) the GaAs contact layer 16 of growth N type high-dopant concentration on above-mentioned Window layer 15 is as ohmic contact.
Above-mentioned steps (1) to (11) all adopts MOCVD or MBE method to prepare said binode GaAs lamination laser photovoltaic cell.
If mocvd method is all adopted in the growth in the step (1) to (11), the foreign atom that then said N type mixes be among Si, Se, S and the Te any one, the foreign atom that said P type mixes be among Zn, Mg and the C any one.
If the growth of MBE method is all adopted in the growth in the step (1) to (11), the foreign atom that then said N type mixes be among Si, Se, S, Sn and the Te any one, the foreign atom that said P type mixes be among Be, Mg and the C any one.
Further use battery standard technology and carry out the preparation of binode GaAs lamination laser photovoltaic cell, comprise step:
(12) as shown in Figure 2, according to battery standard technology, through dry method or wet etching method from GaAs contact layer 16 to substrate 01 direction etching, until manifesting N type substrate 01 surface, isolate through materials such as filler or silica again, form isolation channel 22;
(13) as shown in Figure 3, according to battery standard technology, through dry method or wet etching method from GaAs contact layer 16 to substrate 01 direction etching, until manifesting conductive layer 02 surface, form the positive electrode window of battery;
(14) according to battery standard technology, the negative electrode of battery 23 prepares through modes such as electron beam evaporation, thermal evaporation or magnetron sputterings with positive electrode 24, said negative electrode 23 and positive electrode 24 be AuGe/Ni/Au; Ag; The Au metal material, and form ohmic contact with GaAs contact layer 16 and conductive layer 02 respectively;
(15), adopt dry method or wet etching method under negative electrode 23, to remove by the GaAs contact layer the GaAs contact layer 16 16, until the surface that manifests Window layer 15 according to battery standard technology;
(16) according to battery standard technology, the antireflective coating 25 of battery is through method preparation ZnSe/MgF or TiO on exposed Window layer 15 of chemical vapor deposition, evaporation or sputter
2/ SiO
2Antireflective coating 25, and the height of antireflective coating 25 is lower than the height of GaAs contact layer 16;
(17), adopt contact conductor 26 that battery is carried out adjacent cells positive electrode 24 and connect with negative electrode 23 interconnected realization batteries according to battery standard technology.
Next provide one embodiment of the invention.
A kind of manufacture method of binode lamination laser photovoltaic cell, structure is as shown in Figure 1, specifically comprises the following steps:
One, uses the method growth GaAs binode lamination laser photovoltaic cell of MOCVD or MBE.
1), adopt Semi-insulating GaAs substrate 01, thickness range is at 200 to 500 microns;
2), get into the growth room of MOCVD or MBE, growth one deck thickness range is the N type GaAs conductive layer 02 of 1000nm to 5000nm earlier, the doping content scope is 1 * 10
18Cm
-3To 1 * 10
19Cm
-3
3), grow doping concentration 1 * 10 on conductive layer 02
18Cm
-3Above thickness range is the 3rd barrier layer 03 of the N type AlGaAs ((Al) GaInP) of 10nm to 50nm;
4), on the 3rd barrier layer 03, grow N type doping content greater than 1 * 10
19Cm
-3Thickness range be the GaAs (Ga of 10nm to 50nm
0.51In
0.49P) layer 04, regrowth P type doping content is greater than 1 * 10
19Cm
-3First (Al) GaAs layer 05 of about 10nm to 50nm, form first tunnel junctions 17, a P district 07 that makes end battery 18 can finely be connected with the conductive layer 02 of following N type GaAs;
5), on first (Al) GaAs layer 05 grow doping concentration greater than 1 * 10
18Cm
-3 First barrier layer 06 of P type AlGaAs ((Al) GaInP) of 50nm to 100nm, and can be used as the back of the body field layer of end battery 18;
6), the doping content of the P type of growth 2500nm to 3500nm is 5 * 10 on first barrier layer 06
16Cm
-3To 5 * 10
17Cm
-3The GaAs absorbed layer, i.e. a P district 07, as the base of end battery 18, the N type doping content of regrowth 100nm to 300nm is 1 * 10
17Cm
-3To 4 * 10
18Cm
-3The GaAs absorbed layer, i.e. a N district 08 is as the emitter region of end battery 18; Form a PN junction, as end battery 18;
7), in a N district 08 grow doping concentration greater than 1 * 10
18Cm
-3Thickness range be the 4th barrier layer 09 of second tunnel junctions 19 of the N type AlGaAs ((Al) GaInP) of 20nm to 100nm, also can be used as the Window layer of end battery 18 simultaneously;
8), on the 4th barrier layer 09, grow N type doping content greater than 1 * 10
19Cm
-3Thickness range be the 2nd GaAs (Ga of 10nm to 50nm
0.51In
0.49P) layer 10, regrowth P type doping content is greater than 1 * 10
19Cm
-3Thickness range be second (Al) GaAs layer 11 of 10nm to 50nm, form second tunnel junctions 19;
9), grow doping concentration 1 * 10 on second (Al) GaAs layer 11
18Cm
-3 Second barrier layer 12 of the P type AlGaAs ((Al) GaInP) of above 50nm to 100nm, and can be used as the back of the body field layer of top battery 20;
10), the doping content of the P type of growth 300nm to 600nm is 5 * 10 on second barrier layer 12
16To 5 * 10
17Cm
-3The GaAs absorbed layer, i.e. the 2nd P district 13, as the base of top battery 20, the N type doping content of regrowth 100nm to 300nm is 1 * 10
17To 4 * 10
18Cm
-3The GaAs absorbed layer, be the 2nd N district 14, (total thickness in the 2nd P district 13 and the 2nd N district 14 is 600nm to 800nm) is as the emitter region of top battery 20; Form a PN junction, and as top battery 20;
11), in the 2nd N district 14 growth 1000nm to 3000nm doping content greater than 1 * 10
18Cm
-3The Al of N type
xGa
1-xAs or Ga
0.51In
0.49The Window layer 15 of P, wherein the scope of x is more than or equal to 0.2, and smaller or equal to 1;
12), the growth thickness scope is that the doping content of 100nm to 300nm is greater than 1 * 10 on Window layer 15
18Cm
-3N type GaAs contact layer 16, be used for doing ohmic contact.
Two, application standard prepared binode lamination laser photovoltaic cell.
13), the isolation channel 22 of battery is through dry method or wet etching method etching GaAs contact layer 16, Window layer 15, top battery 20, second barrier layer 12 of P type; Second tunnel junctions 19, the 4th barrier layer 09 of N type, end battery 18, first barrier layer 06 of P type; First tunnel junctions 17, the 3rd barrier layer 03 of N type, conductive layer 02; Until manifesting Semi-insulating GaAs substrate 01, isolate through materials such as filler or silica electric insulations again, like Fig. 2.
14), the positive electrode window of battery is for passing through dry method or wet etching method etching GaAs contact layer 16, Window layer 15, top battery 20; Second barrier layer, 12, the second tunnel junctions 19 of P type, the 4th barrier layer 09 of N type; End battery 18, first barrier layer, 06, the first tunnel junctions 17 of P type; The 3rd barrier layer 03 of N type is until the conductive layer 02 that manifests N type GaAs, like Fig. 3.
15), prepare AuGe/Ni/Au=35/10/100nm through modes such as electron beam evaporation, thermal evaporation or magnetron sputterings; Ag=1 μ m; The negative electrode 23 and the positive electrode 24 of Au=100nm metal material, and form ohmic contact, like Fig. 3.
16), will remove except that the GaAs contact layer the GaAs contact layer 16 under the negative electrode 23 16 through dry method or wet etching method, until manifesting Window layer 15.
17), through chemical vapor deposition techniques, evaporation or sputtering method preparation antireflective coating 25 on exposed Window layer 15, employing ZnSe/MgF or TiO
2/ SiO
2Deng making the antireflective coating material, like Fig. 3.
18), the preparation contact conductor 26, carry out adjacent cells positive electrode 24 with 26 pairs of batteries of contact conductor and connect, like Fig. 3 with negative electrode 23 interconnected realization batteries.
Be respectively the binode GaAs lamination laser photovoltaic cell vertical view of 2V, 4V, 6V, 12V shown in Fig. 4 A, Fig. 4 B, Fig. 4 C, Fig. 4 D.
According to the battery that binode GaAs lamination laser photovoltaic battery production method provided by the invention is processed, connect to obtain required output voltage through several battery units.The open circuit voltage of a binode GaAs lamination laser photovoltaic battery unit is about 2V, and each cell device has just the have an appointment output voltage (as 2,4,6,12V) of several volts of plurality of units series connection like this.Battery is grown on the Semi-insulating GaAs substrate so that in battery processing technology subsequently, realize the electric isolation between each unit, then the positive pole of a battery is linked to each other with the negative pole of another adjacent cell and makes being connected in series of plurality of units.Result of design is that the positive electrode and the negative electrode of battery all drawn from epitaxial surface one side of battery like this; So design can reduce the shading ratio of electrode, the abundant absorption shines the laser energy on the battery photosurface; Positive electrode links to each other with the conductive layer of battery bottom in the periphery of battery photosurface.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (10)
1. a binode GaAs lamination laser photovoltaic cell is characterized in that, comprises the GaAs substrate, and conductive layer, first tunnel junctions, end battery, second tunnel junctions, top battery, the AlGaAs (Ga of the N type GaAs that on said substrate, sets gradually
0.51In
0.49P) Window layer and GaAs contact layer.
2. binode GaAs lamination laser photovoltaic cell according to claim 1; It is characterized in that further comprise isolation channel, said isolation channel is for to run through to the substrate direction from the GaAs contact layer; Until manifesting substrate, and be filled with silica or polyimides glue in the said isolation channel.
3. binode GaAs lamination laser photovoltaic cell according to claim 1 is characterized in that said first tunnel junctions, second tunnel junctions include according to the N type GaAs (Ga that sets gradually away from the substrate direction
0.51In
0.49P) layer, P type (Al) GaAs layer and P type AlGaAs ((Al) GaInP) layer.
4. binode GaAs lamination laser photovoltaic cell according to claim 1 is characterized in that battery of the said end, top battery are the PN junction battery based on GaAs, and separately P district of battery of the said end and top battery, N district are all successively away from substrate.
5. binode GaAs lamination laser photovoltaic cell according to claim 1 is characterized in that, further comprises the positive electrode window, and said positive electrode window is for running through from the GaAs contact layer toward the conductive layer direction, until manifesting conductive layer.
6. binode GaAs lamination laser photovoltaic cell according to claim 1 is characterized in that, further comprises ZnSe/MgF or TiO
2/ SiO
2Antireflective coating, place on the exposed surface of said Window layer.
7. a binode GaAs lamination laser photovoltaic battery preparation method as claimed in claim 1 is characterized in that comprise step: (1) provides GaAs substrate; (2) on substrate, grow successively conductive layer, first tunnel junctions, end battery, second tunnel junctions, top battery, Window layer and GaAs contact layer.
8. the preparation method of binode GaAs lamination laser photovoltaic cell according to claim 7; It is characterized in that; Further comprise step: (3) employing dry method or wet etching method to substrate direction etching, until manifesting substrate surface, form isolation channel from the GaAs contact layer; (4) in isolation channel, fill silica or polyimides glue.
9. the preparation method of binode GaAs lamination laser photovoltaic cell according to claim 8; It is characterized in that; Further comprise step: (5) employing dry method or wet etching method to substrate direction etching, until manifesting conductive layer surface, form the positive electrode window from the GaAs contact layer.
10. the preparation method of binode GaAs lamination laser photovoltaic cell according to claim 7 is characterized in that, further comprises step: adopt the GaAs contact layer of dry method or wet etching method etching appointed area, until the surface that manifests Window layer; The antireflective coating of on the exposed surface of Window layer, growing, the method for said growth antireflective coating be in chemical vapor deposition, evaporation and the sputter any one.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066159A (en) * | 2013-01-11 | 2013-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Monolithic coupling assembly preparation method based on thermophotovoltaic battery |
| CN103117286A (en) * | 2013-01-31 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and production method thereof |
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| CN103247635A (en) * | 2013-01-31 | 2013-08-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell provided with PNP structure and preparation method thereof |
| CN104332479A (en) * | 2013-07-22 | 2015-02-04 | 天津恒电空间电源有限公司 | Laser powered miniature GaAs cell |
| CN105428456A (en) * | 2015-12-08 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Double-junction laminated GaAs battery with quantum well structure and preparation method therefor |
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| CN103066159A (en) * | 2013-01-11 | 2013-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Monolithic coupling assembly preparation method based on thermophotovoltaic battery |
| CN103117286B (en) * | 2013-01-31 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and preparation method thereof |
| CN103123923A (en) * | 2013-01-31 | 2013-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and manufacturing method thereof |
| CN103247635A (en) * | 2013-01-31 | 2013-08-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell provided with PNP structure and preparation method thereof |
| CN103247635B (en) * | 2013-01-31 | 2015-12-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell of positive-negative-positive structure and preparation method thereof |
| CN103117286A (en) * | 2013-01-31 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and production method thereof |
| CN103123923B (en) * | 2013-01-31 | 2016-08-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of laser photovoltaic cell and preparation method thereof |
| CN104332479A (en) * | 2013-07-22 | 2015-02-04 | 天津恒电空间电源有限公司 | Laser powered miniature GaAs cell |
| CN104332479B (en) * | 2013-07-22 | 2017-03-08 | 天津恒电空间电源有限公司 | A kind of miniature GaAs battery of laser power supply |
| CN105428456A (en) * | 2015-12-08 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Double-junction laminated GaAs battery with quantum well structure and preparation method therefor |
| CN105428456B (en) * | 2015-12-08 | 2017-02-01 | 中国电子科技集团公司第十八研究所 | Double-junction laminated GaAs battery with quantum well structure and preparation method therefor |
| CN106653925A (en) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | Two-junction laser battery epitaxial layer and preparation method thereof |
| WO2018192199A1 (en) * | 2017-04-17 | 2018-10-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multi-junction laminated laser photovoltaic cell and manufacturing method thereof |
| US11245046B2 (en) * | 2017-04-17 | 2022-02-08 | Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences | Multi-junction tandem laser photovoltaic cell and manufacturing method thereof |
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