CN104332479A - Laser powered miniature GaAs cell - Google Patents
Laser powered miniature GaAs cell Download PDFInfo
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- CN104332479A CN104332479A CN201310308779.9A CN201310308779A CN104332479A CN 104332479 A CN104332479 A CN 104332479A CN 201310308779 A CN201310308779 A CN 201310308779A CN 104332479 A CN104332479 A CN 104332479A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a laser powered miniature GaAs cell which comprises a plurality of sub-cells that are connected in series. The laser powered miniature GaAs cell is characterized in that each sub-cell comprises a P-N-N-P reverse junction epitaxial structure which is composed of a p-GaAs reverse junction layer, an i-GaAs non-doped layer, an n-GaAs buffer layer, an n-GaAs window layer, an n-GaAs base area layer, a p-GaAs transmission layer, a p-GaAs window layer and a p-GaAs heavily doped layer; wherein the p-GaAs reverse junction layer, the i-GaAs non-doped layer, the n-GaAs buffer layer, the n-GaAs window layer, the n-GaAs base area layer, the p-GaAs transmission layer, the p-GaAs window layer and the p-GaAs heavily doped layer successively grow from bottom to top on a substrate. According to the laser powered miniature GaAs cell, through the P-N-N-P reverse junction epitaxial structure which is formed through epitaxy of PN and NP on the GaAs substrate, a bias voltage is formed between the substrate and the p-GaAs reverse junction layer, thereby performing a current cut-off function, settling a bottom leakage current problem caused by physical isolation between unit cells, effectively reducing leakage current at the bottom of the cell. Furthermore an epitaxial layer is very thin, and the shape dimension of the GaAs cell is 2.2*2.2mm. The miniature GaAs cell is suitable for laser powering.
Description
Technical field
The invention belongs to photoelectric conversion technique field, particularly relate to the miniature GaAs battery of a kind of laser power supply.
Background technology
The miniature GaAs battery of laser power supply is the battery adopting laser to generate electricity as energy of light source.Due to the light source that laser is the best Single wavelength of frequency response, and sunlight is full spectrum, therefore the electric current that the miniature GaAs battery of the laser power supply of same units area produces is far longer than the electric current that sunlight energy supply battery produces, define stable big current effect, and laser power supply miniature GaAs battery also have volume little, lightweight, not by radio wave and the feature such as electromagnetic interference, safety; Current, the miniature GaAs battery of laser power supply mainly as the driving power of MEMS (micro electro mechanical system) (MEMS), and has a wide range of applications in each fields such as electric power, radio communication, medical treatment, Aero-Space.
At present, laser power supply miniature GaAs battery primary structure is multiple sub-battery of connecting on the GaAs substrate of spot size area; Owing to being cascaded structure, have the advantages that open circuit voltage is high, but there is the large problem of bottom leakage current simultaneously, therefore significantly reduce the result of use of the miniature GaAs battery of laser power supply.In order to reduce the bottom leakage current of the miniature GaAs battery of laser power supply, the method adopted is the thickness increasing each grown layer in GaAs epitaxial structure mostly, especially increase the thickness (reaching 10 μm ~ 20 μm) of resilient coating, achieve the effect reducing battery bottom leakage current; But due to the laser power supply miniature GaAs battery epitaxy layer thickness large (reaching 18 μ ~ 28 μm) that the method is made, not only epitaxial growth is complicated, cost is high, and adds the difficulty of battery post-production technique.
Summary of the invention
The present invention for solve in known technology the technical problem that exists and provide that a kind of thickness is thin, epitaxial growth and integral battery door manufacture craft is simple, cost is low, and the miniature GaAs battery of a kind of laser power supply that battery bottom leakage current is little.
The technical scheme that the present invention takes is:
The miniature GaAs battery of a kind of laser power supply, comprise a series connection all-in-one-piece plural number battery, be characterized in: the P-N-N-P reef knot epitaxial structure that the heavily doped layer of p-GaAs reef knot layer, i-GaAs non-doped layer, n-GaAs resilient coating, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer, p-GaAs Window layer and p-GaAs that described sub-battery grows successively from bottom to top on substrate is formed; The top electrode of sub-battery is formed on the heavily doped layer of p-GaAs, the bottom electrode of sub-battery is formed on bottom electrode region, and described bottom electrode region is remove the n-GaAs resilient coating that in P-N-N-P reef knot epitaxial structure, the heavily doped layer of part p-GaAs, p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer are exposed; Have isolation channel between P-N-N-P reef knot epitaxial structure below described top electrode and the n-GaAs resilient coating below bottom electrode, i-GaAs non-doped layer, p-GaAs reef knot layer, the substrate exposed in isolation channel is as bottom isolation channel.
The present invention can also adopt following technical scheme:
The one that described power on very top electrode gold lower floor, top electrode silver layer become with top electrode gold upper strata evaporation.
The one that described bottom electrode is bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer become with bottom electrode gold upper strata evaporation.
The integral spun gold welding of described plural number sub-serial battery is as interconnecting electrode.
Form the cell area of besieged city, the battery boundary line 2.2mm × 2.2mm of the substrate perimeter of miniature GaAs battery.
The advantage that the present invention has and good effect are:
1, the P-N-N-P reef knot epitaxial structure that formed by extending PN and NP outside face on gaas substrates of the present invention, substrate and p-GaAs reef knot layer is made to define reversed bias voltage, serve the effect of current cut-off, the physical isolation solved between element cell causes the problem of bottom leakage current, effectively reduce the leakage current of battery bottom, and epitaxial loayer is very thin, thickness is only less than 9 μm, reduce the difficulty of the techniques such as later stage corrosion isolation, and effectively improve epitaxially grown quality.
2, present invention employs spun gold welding interconnecting electrode, without the need to PI glue isolation technology, not only avoid the interconnected short circuit of electrode, and technique is simple, the manufacturing cost that effectively reduces product.
Accompanying drawing explanation
Fig. 1 is that laser power supply of the present invention miniature GaAs battery master looks section expansion schematic diagram;
Fig. 2 is laser power supply of the present invention miniature GaAs battery plan shape schematic diagram;
Fig. 3 is laser power supply of the present invention miniature GaAs cell I-V electric performance test curve chart.
In figure: 1, the heavily doped layer of p-GaAs, 2, p-GaAs Window layer, 3, p-GaAs emission layer, 4, n-GaAs base layer, 5, n-GaAs Window layer, 6, n-GaAs resilient coating, 7, i-GaAs non-doped layer, 8, p-GaAs reef knot layer, 9, substrate, 10, top electrode, 11, top electrode gold lower floor, 12, top electrode silver layer, 13, top electrode gold upper strata, 14, bottom electrode, 15, bottom electrode gold lower floor, 16, bottom electrode germanium layer, 17, bottom electrode silver layer, 18, bottom electrode gold upper strata, 19, isolation channel, 20, interconnecting electrode, 21, battery boundary line, 22, bottom isolation channel, 23, bottom electrode region.
Embodiment
For summary of the invention of the present invention, Characteristic can be understood further, hereby exemplify following examples, and coordinate accompanying drawing to be described in detail as follows:
The miniature GaAs battery of a kind of laser power supply, comprises a series connection all-in-one-piece plural number battery;
Innovative point of the present invention comprises:
The P-N-N-P reef knot epitaxial structure that the heavily doped layer 1 of p-GaAs reef knot layer 8, i-GaAs non-doped layer 7, n-GaAs resilient coating 6, n-GaAs Window layer 5, n-GaAs base layer 4, p-GaAs emission layer 3, p-GaAs Window layer 2 and p-GaAs that described sub-battery grows successively from bottom to top on substrate 9 is formed; The top electrode 10 of sub-battery is formed on the heavily doped layer of p-GaAs, the bottom electrode 14 of sub-battery is formed on bottom electrode region 23, and described bottom electrode region is remove the n-GaAs resilient coating that in P-N-N-P reef knot epitaxial structure, the heavily doped layer of part p-GaAs, p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer are exposed; Have isolation channel 19 between P-N-N-P reef knot epitaxial structure below described top electrode and the n-GaAs resilient coating below bottom electrode, i-GaAs non-doped layer, p-GaAs reef knot layer, the substrate exposed in isolation channel is as bottom isolation channel 22.
Innovative point of the present invention also comprises:
The one that described power on very top electrode gold lower floor 11, top electrode silver layer 12 become with top electrode gold upper strata 13 evaporation.
The one that described bottom electrode is bottom electrode gold lower floor 15, bottom electrode germanium layer 16, bottom electrode silver layer 17 become with bottom electrode gold upper strata 18 evaporation.
The integral spun gold welding of described plural number sub-serial battery is as interconnecting electrode 20.
Encircle a city the cell area of 2.2mm × 2.2mm in the battery boundary line 21 forming the substrate perimeter of miniature GaAs battery.
The manufacturing process of the miniature GaAs battery of laser power supply of the present invention:
Step 1, preparing substrate
The Semi-insulating GaAs material selecting diameter 100mm, thickness 300 μm, radial direction to depart from 2 ° is as the GaAs substrate of grown epitaxial layer as shown in Figure 1;
Step 2, reef knot grown epitaxial layer
Adopt vapor phase epitaxial growth (MOVPE) technology, in step 1 above GaAs substrate from bottom to top successively growth thickness be 0.3 μm p-GaAs reef knot layer, 0.1 μm i-GaAs non-doped layer, 2 μm n-GaAs resilient coating,
n-GaAs Window layer, the n-GaAs base layer of 3 μm, the p-GaAs emission layer of 1 μm, the p-GaAs Window layer of 2 μm, the heavily doped layer of p-GaAs of 0.2 μm; Form P-N-N-P reef knot epitaxial loayer;
Step 3, make sub-battery
(1) photoetching isolation channel figure
After step 2 completes, GaAs substrate is placed in glue spreader, the heavily doped layer of p-GaAs is coated with the thick BP218 positive photo glue more than 5 μm of last layer glue, the rotating speed whirl coating of less than 1000 revs/min, after even glue, 90 DEG C of drying glues 30 minutes; With mask aligner with 20mW/cm
2expose 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, with TR baking oven 110 DEG C of post bakes 30 minutes; With the area that 2.2mm × 2.2mm is a battery, on the heavily doped layer of p-GaAs of diameter 100mm area, make multiple battery isolation channel figure as shown in Figure 2 by reticle by lithography;
(2) wet etching isolation channel
In the figure of the isolation channel (1) made by lithography in step 3, use volume ratio citric acid saturated solution successively: H
2o
2=5:1 corrodes 3 minutes as citric acid corrosive liquid, and remove the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, remove p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid; Corrode 6 minutes with citric acid corrosive liquid, remove p-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, remove n-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid; With citric acid corrosive liquid corrosion 4min, remove n-GaAs resilient coating, i-GaAs non-doped layer and p-GaAs reef knot layer, deionized water rinsing falls citric acid corrosive liquid, until expose GaAs substrate as bottom isolation channel, each cell area to erode away shown in Fig. 2 six uniform isolation channels, and six casting lug thereons that each cell area of GaAs substrate isolates are as six sub-batteries;
Step 4, making bottom electrode
(1) the figure in photoetching bottom electrode region
After step 3 completes, GaAs substrate is placed on glue spreader, every six heavily doped layers of sub-cell p-GaAs that step 3 is made are coated with the thick BP218 positive photo glue of last layer more than 5 μm, the rotating speed whirl coating of less than 1000 revs/min, after even glue, 90 DEG C of drying glues 30 minutes; With mask aligner with 20mW/cm
2expose 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, with TR baking oven 110 DEG C of post bakes 30 minutes, on the heavily doped layer of p-GaAs, make the figure in the bottom electrode region of the evaporation bottom electrode shown in Fig. 2 by lithography by reticle;
(2) wet etching goes out bottom electrode region
On the bottom electrode regional graphics that (1) step 4 makes by lithography, use volume ratio citric acid saturated solution successively: H
2o
2=5:1 was as citric acid corrosive liquid corrosive attack 3 minutes, and get rid of the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, get rid of p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid; Corrode 6 minutes with citric acid corrosive liquid, get rid of p-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, get rid of n-GaAs Window layer to exposing n-GaAs resilient coating, deionized water rinsing falls dense HCL corrosive liquid, and each cell area erodes away the bottom electrode region of the bottom electrode of evaporation shown in Fig. 1;
(3) evaporation bottom electrode metal level
For preventing battery short circuit, in isolation channel, filling PI glue, be greater than 5 × 10 by vacuum degree
-4the high vacuum coating unit of Pa, above the n-GaAs resilient coating in each sub-battery bottom electrode region according to the bottom electrode region shown in Fig. 2 from bottom to top successively evaporation thickness be
bottom electrode gold lower floor,
bottom electrode germanium layer, 5 μm bottom electrode silver layer and
bottom electrode gold upper strata, complete the manufacturing process of each sub-battery bottom electrode.
Step 5, making top electrode
PI glue is filled in gap between each sub-battery and its bottom electrode, is greater than 5 × 10 by vacuum degree
-4the high vacuum coating unit of Pa, makes the top electrode figure shown in Fig. 2 by reticle by lithography on the heavily doped layer of p-GaAs of each sub-battery, according to top electrode figure on the heavily doped layer of p-GaAs from bottom to top successively evaporation thickness be
top electrode gold lower floor, 5 μm top electrode silver layer and
top electrode gold upper strata, complete the manufacturing process of each sub-battery top electrode;
Step 6, welding interconnecting electrode
The spun gold with diameter being 25 μm, to the top electrode of adjacent subcell in six sub-batteries and bottom electrode welding, forms five gold thread interconnecting electrodes, makes six sub-serial battery integral;
Step 7, evaporation antireflective coating
After step 6 completes, GaAs substrate is put on the evaporation disc of high vacuum coating unit, and the titanium sesquioxide of 50g-60g and the silicon monoxide of 80g-110g are respectively charged into crucible, and crucible is placed on evaporation disc; Close the door for vacuum chamber of high vacuum coating unit, vacuum degree is carried out to high vacuum coating unit and is greater than 5 × 10
-4pa vacuumizes, and successively carry out the thick titanium sesquioxide evaporation of 56n m and the thick silicon monoxide vapor deposition of 90nm to cell integrated surface, cell integrated surface forms antireflective coating;
Step 8, scribing
With scribing machine, the battery disk after evaporation antireflective coating is carried out scribing along the boundary line of battery shown in Fig. 2, make multiple 2.2mm × 2.2mm foursquare leakproof electric current ultra-thin micro GaAs battery, complete the manufacture process that profile of the present invention is 2.2mm × 2.2mm, epitaxy layer thickness is the leakproof electric current ultra-thin micro GaAs battery of 9 μm.
The electric performance test of the miniature GaAs battery of laser power supply:
Because whether the size of short circuit current and fill factor, curve factor can be effectively controlled in the electric leakage of reaction cell.The adjustable laser that employing optical maser wavelength 830nm, power are 600mW, fibre diameter is 1.8mm carries out I-V electric performance test and battery bottom leakage tests to the miniature GaAs battery of laser power supply prepared by the present invention, test data as shown in table 1 and Fig. 3: open circuit voltage is 6.5V, short circuit current reaches 47.2mA, fill factor, curve factor is 67%, and maximum power point place magnitude of voltage reaches 5.4V.Experimental result describes the battery that the present invention manufactures, and not only thickness is thin, epitaxial growth and integral battery door manufacture craft is simple, cost is low, and serves obvious effect to what reduce battery bottom electric leakage.
Table 1 battery bottom leakage tests tables of data
| Open circuit voltage (V) | Short circuit current (mA) | Fill factor, curve factor (%) | Maximum power point place magnitude of voltage (V) |
| 6.5 | 47.2 | 67 | 5.4 |
Although be described the preferred embodiments of the present invention by reference to the accompanying drawings above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; do not departing under the ambit that present inventive concept and claim protect, can also make a lot of form, these all belong within protection scope of the present invention.
Claims (5)
1. the miniature GaAs battery of laser power supply, comprise a series connection all-in-one-piece plural number battery, it is characterized in that: the P-N-N-P reef knot epitaxial structure that the heavily doped layer of p-GaAs reef knot layer, i-GaAs non-doped layer, n-GaAs resilient coating, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer, p-GaAs Window layer and p-GaAs that described sub-battery grows successively from bottom to top on substrate is formed; The top electrode of sub-battery is formed on the heavily doped layer of p-GaAs, the bottom electrode of sub-battery is formed on bottom electrode region, and described bottom electrode region is remove the n-GaAs resilient coating that in P-N-N-P reef knot epitaxial structure, the heavily doped layer of part p-GaAs, p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer are exposed; Have isolation channel between P-N-N-P reef knot epitaxial structure below described top electrode and the n-GaAs resilient coating below bottom electrode, i-GaAs non-doped layer, p-GaAs reef knot layer, the substrate exposed in isolation channel is as bottom isolation channel.
2. the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: described in power on the one that very top electrode gold lower floor, top electrode silver layer become with top electrode gold upper strata evaporation.
3. the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: the one that described bottom electrode is bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer become with bottom electrode gold upper strata evaporation.
4. the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: the integral spun gold welding of described plural number sub-serial battery is as interconnecting electrode.
5. the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: the cell area forming besieged city, the battery boundary line 2.2mm × 2.2mm of the substrate perimeter of miniature GaAs battery.
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Cited By (1)
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| CN106788238A (en) * | 2017-02-10 | 2017-05-31 | 成都聚立汇信科技有限公司 | A kind of photovoltaic and photothermal solar set composite |
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Effective date of registration: 20221116 Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Energy Co.,Ltd. Address before: No. 6, Haitai Huake 7th Road, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: The 18th Research Institute of China Electronics Technology Group Corporation |
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Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Blue Sky Technology Co.,Ltd. Address before: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: CETC Energy Co.,Ltd. |
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