CN104332479B - A kind of miniature GaAs battery of laser power supply - Google Patents
A kind of miniature GaAs battery of laser power supply Download PDFInfo
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- CN104332479B CN104332479B CN201310308779.9A CN201310308779A CN104332479B CN 104332479 B CN104332479 B CN 104332479B CN 201310308779 A CN201310308779 A CN 201310308779A CN 104332479 B CN104332479 B CN 104332479B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The present invention relates to a kind of miniature GaAs battery of laser power supply, including the series connection all-in-one-piece battery of plural number, it is characterized in：The P N N P reef knot epitaxial structure that p GaAs reef knot layer, i GaAs non-doped layer, n GaAs cushion, n GaAs Window layer, n GaAs base layer, p GaAs emission layer, p GaAs Window layer and the heavily doped layer of p GaAs that described sub- battery includes growing successively from bottom to top on substrate is constituted.The present invention is by extending the P N N P reef knot epitaxial structure of PN and NP formation outside face on gaas substrates, substrate and p GaAs reef knot layer is made to define reversed bias voltage, serve the effect of current cut-off, solve the problems, such as that the physical isolation between element cell causes bottom leakage current, effectively reduce the leakage current of battery bottom, and epitaxial layer is very thin, overall dimensions are 2.2 × 2.2mm, are suitable for laser power supply.
Description
Technical field
The invention belongs to photoelectric conversion technique field, the miniature GaAs battery of more particularly to a kind of laser power supply.
Background technology
Laser power supply miniature GaAs battery is the battery being generated electricity as energy of light source using laser.Because laser is frequency
Respond the light source of best Single wavelength, and sunlight is full spectrum, the laser power supply miniature GaAs electricity of thus like unit area
The electric current that pond produces is far longer than the electric current of sun laser energy supply battery generation, defines stable high current effect, and laser supplies
Can miniature GaAs battery also have small volume, lightweight, be not subject to radio wave and electromagnetic interference, safe the features such as；Currently, laser
Energy supply miniature GaAs battery primarily as the driving power supply of MEMS (MEMS), and electric power, radio communication, medical treatment,
Each field such as Aero-Space has a wide range of applications.
At present, laser power supply miniature GaAs battery primary structure be connect on the GaAs substrate of spot size area multiple
Sub- battery；Due to being cascaded structure, have the characteristics that open-circuit voltage is high, but there is a problem of that bottom leakage current is big, therefore simultaneously
Significantly reduce the using effect of laser power supply miniature GaAs battery.Bottom in order to reduce laser power supply miniature GaAs battery is leaked
Electric current, the method for employing is to increase the thickness of each grown layer in GaAs epitaxial structure mostly, is especially to increase the thickness of cushion
(reaching 10 μm～20 μm), achieves the effect reducing battery bottom leakage current；But because the laser power supply that the method is made is micro-
Type GaAs battery epitaxy layer thickness is big (reaching 18 μ～28 μm), and not only epitaxial growth is complicated, high cost, and increased battery
The difficulty of post-production technique.
Content of the invention
The present invention provides a kind of thickness of thin, epitaxial growth and overall electricity for solving technical problem present in known technology
Pond processing technology is simple, low cost, and a kind of little laser power supply miniature GaAs battery of battery bottom leakage current.
The present invention adopts the technical scheme that：
A kind of miniature GaAs battery of laser power supply, including the series connection all-in-one-piece battery of plural number, is characterized in：Described son
P-GaAs reef knot layer that battery includes growing successively from bottom to top on substrate, i-GaAs non-doped layer, n-GaAs buffering
The P- that layer, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer, p-GaAs Window layer and the heavily doped layer of p-GaAs are constituted
N-N-P reef knot epitaxial structure；The Top electrode of sub- battery is formed on the heavily doped layer of p-GaAs, and the bottom electrode of sub- battery is formed on lower electrode area
Domain, described lower pole region is to remove the heavily doped layer of part p-GaAs, p-GaAs Window layer, p- in P-N-N-P reef knot epitaxial structure
The n-GaAs cushion that GaAs emission layer, n-GaAs base layer and n-GaAs Window layer are exposed；The isolation channel exposing substrate is formed
Between the lower electrode arrangement and adjacent upper electrode arrangement of a sub- battery.
The present invention can also adopt the following technical scheme that：
The one that described Top electrode is Top electrode gold lower floor, Top electrode silver layer is deposited with Top electrode gold upper strata.
Described bottom electrode is bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer are deposited with bottom electrode gold upper strata
Integrally.
The spun gold that the sub- battery strings of described plural number join together welds as interconnecting electrode.
Constitute the cell area of the battery boundary line besieged city 2.2mm × 2.2mm of the substrate perimeter of miniature GaAs battery.
The present invention has the advantages and positive effects that：
1st, the present invention, by extending the P-N-N-P reef knot epitaxial structure of PN and NP formation outside face on gaas substrates, makes lining
Bottom and p-GaAs reef knot layer define reversed bias voltage, serve the effect of current cut-off, solve physics between element cell every
From the problem causing bottom leakage current, effectively reduce the leakage current of battery bottom, and epitaxial layer is very thin, thickness is only 9 μm
Hereinafter, reduce the difficulty of the techniques such as later stage corrosion isolation, and effectively increase epitaxially grown quality.
2nd, present invention employs spun gold welding interconnecting electrode, without PI glue isolation technology, not only avoid electrode interconnection short circuit,
And process is simple, effectively reduce the manufacturing cost of product.
Brief description
Fig. 1 is laser power supply of the present invention miniature GaAs battery main view section expanded schematic diagram；
Fig. 2 is laser power supply of the present invention miniature GaAs battery plan shape schematic diagram；
Fig. 3 is laser power supply of the present invention miniature GaAs cell I-V electric performance test curve chart.
In figure：1st, the heavily doped layer of p-GaAs, 2, p-GaAs Window layer, 3, p-GaAs emission layer, 4, n-GaAs base layer, 5, n-
GaAs Window layer, 6, n-GaAs cushion, 7, i-GaAs non-doped layer, 8, p-GaAs reef knot layer, 9, substrate, 10, Top electrode,
11st, Top electrode gold lower floor, 12, Top electrode silver layer, 13, Top electrode gold upper strata, 14, bottom electrode, 15, bottom electrode gold lower floor, 16,
Bottom electrode germanium layer, 17, bottom electrode silver layer, 18, bottom electrode gold upper strata, 19, isolation channel, 20, interconnecting electrode, 21, battery boundary line,
22nd, isolate trench bottom, 23, lower pole region.
Specific embodiment
For content of the invention, feature and effect of the present invention can be further appreciated that, hereby enumerate following examples, and coordinate accompanying drawing
Describe in detail as follows：
A kind of miniature GaAs battery of laser power supply, including the series connection all-in-one-piece battery of plural number；
The innovative point of the present invention includes：
Described sub- battery includes p-GaAs reef knot layer 8, the i-GaAs undoped growing successively from bottom to top on substrate 9
Layer 7, n-GaAs cushion 6, n-GaAs Window layer 5, n-GaAs base layer 4, p-GaAs emission layer 3, p-GaAs Window layer 2 and p-
The P-N-N-P reef knot epitaxial structure that the heavily doped layer of GaAs 1 is constituted；The Top electrode 10 of sub- battery is formed on the heavily doped layer of p-GaAs, son electricity
The bottom electrode 14 in pond is formed on lower pole region 23, and described lower pole region is to remove part p- in P-N-N-P reef knot epitaxial structure
The n-GaAs that the heavily doped layer of GaAs, p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer are exposed delays
Rush layer；P-N-N-P reef knot epitaxial structure below described Top electrode and the n-GaAs cushion below bottom electrode, i-GaAs is non-mixes
There is isolation channel 19, the substrate exposing in isolation channel is as isolation trench bottom 22 between diamicton, p-GaAs reef knot layer.
The innovative point of the present invention also includes：
The one that described Top electrode is Top electrode gold lower floor 11, Top electrode silver layer 12 is deposited with Top electrode gold upper strata 13.
Described bottom electrode be bottom electrode gold lower floor 15, bottom electrode germanium layer 16, bottom electrode silver layer 17 and bottom electrode gold upper strata 18
The one being deposited with.
The spun gold that the sub- battery strings of described plural number join together welds as interconnecting electrode 20.
Constitute the cell area of the battery boundary line 21 besieged city 2.2mm × 2.2mm of the substrate perimeter of miniature GaAs battery.
The manufacturing process of the miniature GaAs battery of laser power supply of the present invention：
Step 1, preparing substrate
From diameter 100mm, 300 μm of thickness, be radially offset from 2 ° of Semi-insulating GaAs material as shown in Figure 1 grow outer
Prolong the GaAs substrate of layer；
Step 2, reef knot grown epitaxial layer
Using vapor phase epitaxial growth (MOVPE) technology, growth thickness successively from bottom to top above GaAs substrate in step 1
P-GaAs reef knot layer for 0.3 μm, 0.1 μm of i-GaAs non-doped layer, 2 μm of n-GaAs cushion,N-GaAs
Window layer, 3 μm of n-GaAs base layer, 1 μm of p-GaAs emission layer, 2 μm of p-GaAs Window layer, 0.2 μm of p-GaAs weight
Mix layer；Form P-N-N-P reef knot epitaxial layer；
Step 3, the sub- battery of making
(1) photoetching isolation channel figure
After the completion of step 2, GaAs substrate is placed in glue spreader, the heavily doped layer of p-GaAs applies last layer glue thick 5 μm with
On BP218 positive photo glue, less than 1000 revs/min of rotating speed whirl coating, after spin coating, 90 DEG C of drying glues 30 minutes；Use litho machine
With 20mW/cm2Exposure 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, with 110 DEG C of post bakes of TR baking oven 30 minutes；
The area being a battery with 2.2mm × 2.2mm, is made by lithography on the heavily doped layer of p-GaAs of diameter 100mm area with reticle
Multiple battery isolation channel figure as shown in Figure 2；
(2) wet etching isolation channel
In the figure of the isolation channel that (1) step 3 makes by lithography, use volume ratio citric acid saturated solution successively：H2O2=5:1 conduct
Citric acid corrosion corrosion 3 minutes, removes the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid；With dense HCL corrosion
1 minute, remove p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid；Corrode corrosion 6 minutes with citric acid, remove
P-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid；Corroded 1 minute with dense HCL, remove n-
GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid；With citric acid corrode corrosion 4min, remove n-GaAs cushion,
I-GaAs non-doped layer and p-GaAs reef knot layer, deionized water rinsing falls citric acid corrosive liquid, until exposing GaAs substrate conduct
Isolation trench bottom, each cell area is corroded and six uniform isolation channels shown in Fig. 2, in each cell area of GaAs substrate every
Six casting lug thereons separating out are as six sub- batteries；
Step 4, making bottom electrode
(1) the figure of photoetching lower pole region
After the completion of step 3, GaAs substrate is placed on glue spreader, the every six sub- cell p-GaAs weights made in step 3
Mix and more than 5 μm thick BP218 positive photo glue of last layer are applied on layer, less than 1000 revs/min of rotating speed whirl coating, after spin coating, 90
DEG C drying glue 30 minutes；With litho machine with 20mW/cm2Exposure 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, use thermal resistance
110 DEG C of post bakes of formula baking oven 30 minutes, make the lower electricity of the evaporation bottom electrode shown in Fig. 2 on the heavily doped layer of p-GaAs by lithography with reticle
The figure in polar region domain；
(2) wet etching goes out lower pole region
On the lower pole region figure that (1) step 4 makes by lithography, use volume ratio citric acid saturated solution successively：H2O2=5:1 work
For citric acid corrosive liquid corrosive attack 3 minutes, get rid of the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid；With
Dense HCL corrodes 1 minute, gets rid of p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid；Rotten with citric acid corrosive liquid
Erosion 6 minutes, gets rid of p-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid；Rotten with dense HCL
Erosion 1 minute, gets rid of n-GaAs Window layer to exposing n-GaAs cushion, deionized water rinsing falls dense HCL corrosive liquid, each electricity
Pool area corrodes the lower pole region evaporation bottom electrode shown in Fig. 1；
(3) it is deposited with bottom electrode metal level
For preventing battery short circuit, isolation channel is filled PI glue, is more than 5 × 10 with vacuum-4The high vacuum coating unit of Pa,
On the n-GaAs cushion in each sub- battery lower pole region according to the lower pole region shown in Fig. 2 from bottom to top according to
Secondary evaporation thickness isBottom electrode gold lower floor,Bottom electrode germanium layer, 5 μm of bottom electrode silver layer and
Bottom electrode gold upper strata, complete the manufacturing process of each sub- battery bottom electrode.
Step 5, making Top electrode
Gap filling PI glue between each sub- battery and its bottom electrode, is more than 5 × 10 with vacuum-4The fine vacuum of Pa
Coater, makes the Top electrode figure shown in Fig. 2 with reticle by lithography on the heavily doped layer of p-GaAs of each sub- battery, according to
Top electrode figure on the heavily doped layer of p-GaAs from bottom to top successively evaporation thickness beTop electrode gold lower floor, 5 μm
Top electrode silver layer andTop electrode gold upper strata, complete the manufacturing process of each sub- battery Top electrode；
Step 6, welding interconnecting electrode
With a diameter of 25 μm of spun golds, the Top electrode of adjacent subcell in six sub- batteries and bottom electrode are welded, form five
Individual gold thread interconnecting electrode, makes six sub- battery strings join together；
Step 7, evaporation antireflective coating
After the completion of step 6, GaAs substrate is put on the evaporation disc of high vacuum coating unit, by the titanium sesquioxide of 50g-60g
It is respectively charged into crucible with the silicon monoxide of 80g-110g, crucible is placed on evaporation disc；Close the door for vacuum chamber of high vacuum coating unit,
High vacuum coating unit is carried out with vacuum and is more than 5 × 10-4The evacuation of Pa, carries out 56n m thickness to battery integral surface priority
Titanium sesquioxide evaporation and the silicon monoxide vapor deposition of 90nm thickness, battery integral surface forms antireflective coating；
Step 8, scribing
With scribing machine, the battery disk being deposited with after antireflective coating is carried out scribing along battery boundary line shown in Fig. 2, make
Multiple 2.2mm × 2.2mm foursquare leakproof electric current ultra-thin micro GaAs battery, complete profile of the present invention be 2.2mm ×
2.2mm, epitaxy layer thickness are the manufacture process of 9 μm of leakproof electric current ultra-thin micro GaAs battery.
The electric performance test of laser power supply miniature GaAs battery：
Whether the electric leakage being sized to reaction cell due to short circuit current and fill factor, curve factor is effectively controlled.Using sharp
The laser power supply that the adjustable laser that optical wavelength 830nm, power are 600mW, fibre diameter is 1.8mm is prepared to the present invention is micro-
Type GaAs battery carries out I-V electric performance test and battery bottom leakage testses, the test data as shown in table 1 and Fig. 3：Open circuit electricity
Press as 6.5V, short circuit current reaches 47.2mA, fill factor, curve factor is 67%, and at maximum power point, magnitude of voltage reaches 5.4V.Experiment knot
Fruit illustrates the battery that the present invention manufactures, and not only thickness of thin, epitaxial growth and integral battery door processing technology are simple, low cost, and
Serve obvious effect to reducing battery bottom electric leakage.
Table 1 battery bottom leakage testses tables of data
| Open-circuit voltage (V) | Short circuit current (mA) | Fill factor, curve factor (%) | Magnitude of voltage (V) at maximum power point |
| 6.5 | 47.2 | 67 | 5.4 |
Although being described to the preferred embodiments of the present invention above in conjunction with accompanying drawing, the invention is not limited in
The specific embodiment stated, above-mentioned specific embodiment is only schematically, is not restricted, this area common
Technical staff, under the enlightenment of the present invention, in the case of without departing from present inventive concept and scope of the claimed protection, also may be used
To make a lot of forms, these belong within protection scope of the present invention.
Claims (5)
1. the miniature GaAs battery of a kind of laser power supply, including the series connection all-in-one-piece battery of plural number it is characterised in that：Described son
P-GaAs reef knot layer that battery includes growing successively from bottom to top on substrate, i-GaAs non-doped layer, n-GaAs cushion,
The P-N-N- that n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer, p-GaAs Window layer and the heavily doped layer of p-GaAs are constituted
P reef knot epitaxial structure；The Top electrode of sub- battery is formed on the heavily doped layer of p-GaAs, and the bottom electrode of sub- battery is formed on lower pole region,
Described lower pole region is to remove the heavily doped layer of part p-GaAs, p-GaAs Window layer, p-GaAs in P-N-N-P reef knot epitaxial structure
The n-GaAs cushion that emission layer, n-GaAs base layer and n-GaAs Window layer are exposed；The isolation channel exposing substrate is formed at one
Between the lower electrode arrangement of sub- battery and adjacent upper electrode arrangement.
2. the miniature GaAs battery of laser power supply according to claim 1 it is characterised in that：Described Top electrode is Top electrode gold
The one that lower floor, Top electrode silver layer are deposited with Top electrode gold upper strata.
3. the miniature GaAs battery of laser power supply according to claim 1 it is characterised in that：Described bottom electrode is bottom electrode gold
The one that lower floor, bottom electrode germanium layer, bottom electrode silver layer are deposited with bottom electrode gold upper strata.
4. the miniature GaAs battery of laser power supply according to claim 1 it is characterised in that：Described plural sub- battery strings connection
Integral spun gold welds as interconnecting electrode.
5. the miniature GaAs battery of laser power supply according to claim 1 it is characterised in that：Constitute the lining of miniature GaAs battery
The cell area of the battery boundary line besieged city 2.2mm × 2.2mm around bottom.
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| US6864414B2 (en) * | 2001-10-24 | 2005-03-08 | Emcore Corporation | Apparatus and method for integral bypass diode in solar cells |
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| KR20030085379A (en) * | 2002-04-30 | 2003-11-05 | 국방과학연구소 | Pin diode and the method of manufacturing pin diode |
| WO2009101739A1 (en) * | 2008-02-12 | 2009-08-20 | Nec Corporation | Surface-emitting laser and method for manufacturing the same |
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Effective date of registration: 20221116 Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Energy Co.,Ltd. Address before: No. 6, Haitai Huake 7th Road, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: The 18th Research Institute of China Electronics Technology Group Corporation |
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Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Blue Sky Technology Co.,Ltd. Address before: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: CETC Energy Co.,Ltd. |