CN104332525B - The manufacture method of laser power supply miniature GaAs battery - Google Patents
The manufacture method of laser power supply miniature GaAs battery Download PDFInfo
- Publication number
- CN104332525B CN104332525B CN201310308181.XA CN201310308181A CN104332525B CN 104332525 B CN104332525 B CN 104332525B CN 201310308181 A CN201310308181 A CN 201310308181A CN 104332525 B CN104332525 B CN 104332525B
- Authority
- CN
- China
- Prior art keywords
- gaas
- layer
- battery
- electrode
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 166
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000002955 isolation Methods 0.000 claims abstract description 25
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 25
- 239000010931 gold Substances 0.000 claims description 25
- 229910052737 gold Inorganic materials 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000001459 lithography Methods 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 36
- 239000007788 liquid Substances 0.000 description 14
- 239000003292 glue Substances 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000011056 performance test Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000012047 saturated solution Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Secondary Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to the manufacture method of a kind of laser power supply miniature GaAs battery, including preparation GaAs substrate, be characterized in: on substrate, after reef knot grown epitaxial layer, make sub-battery；Every sub-battery makes bottom electrode and upper electrode, with interconnecting electrode, upper electrode and the bottom electrode of adjacent subcell are welded, the battery forming series connection is overall, battery integral surface is deposited with antireflective coating, scribing, i.e. makes laser power supply of the present invention miniature GaAs battery.The present invention is by extending the P N N P reef knot epitaxial structure that PN and NP is formed outside face on gaas substrates, substrate and p GaAs reef knot layer is made to define reversed bias voltage, serve the effect of current cut-off, solve the problem that the physical isolation between element cell causes bottom leakage current, effectively reducing the leakage current of battery bottom, and epitaxial layer is the thinnest, thickness is only below 9 μm, reduce the difficulty of the techniques such as later stage corrosion isolation, and be effectively increased epitaxially grown quality.
Description
Technical field
The invention belongs to photoelectric conversion technique field, particularly relate to the manufacturer of a kind of laser power supply miniature GaAs battery
Method.
Background technology
Laser power supply miniature GaAs battery is the battery using laser to generate electricity as energy of light source.Owing to laser is frequency
Respond the light source of best Single wavelength, and sunlight is full spectrum, the laser power supply miniature GaAs electricity of thus like unit are
The electric current that pond produces is far longer than the electric current that sunlight energy supply battery produces, and defines and stablizes big current effect, and laser supplies
It is little, lightweight, not by radio wave and the feature such as electromagnetic interference, safety that the miniature GaAs battery of energy also has volume；Currently, laser
Energy supply miniature GaAs battery primarily as the driving power supply of MEMS (MEMS), and electric power, radio communication, medical treatment,
Each field such as Aero-Space has a wide range of applications.
At present, laser power supply miniature GaAs battery primary structure be connect on the GaAs substrate of spot size area multiple
Sub-battery；Owing to being cascaded structure, have the advantages that open-circuit voltage is high, but the problem that bottom existing, leakage current is big simultaneously, therefore
Significantly reduce the using effect of laser power supply miniature GaAs battery.Leak to reduce the bottom of laser power supply miniature GaAs battery
Electric current, the method for employing is mostly to increase the thickness of each grown layer in GaAs epitaxial structure, especially increases the thickness of cushion
(reaching 10 μm～20 μm), achieves the effect reducing battery bottom leakage current；But the laser power supply made due to the method is micro-
Type GaAs battery epitaxy layer thickness is big (reaching 18 μ～28 μm), and not only epitaxial growth is complicated, cost is high, and adds battery
The difficulty of post-production technique.
Summary of the invention
The present invention solves technical problem present in known technology and provide that a kind of thickness is thin, epitaxial growth and entirety electricity
Pond processing technology is simple, low cost, and the manufacture method of the little laser power supply miniature GaAs battery of battery bottom leakage current.
The present invention adopts the technical scheme that:
The manufacture method of laser power supply miniature GaAs battery, including preparation GaAs substrate, be characterized in: thickness 300 μm,
Sub-battery, described reef knot growth extension is made after reef knot grown epitaxial layer on the substrate of the Semi-insulating GaAs material being radially offset from 2 °
Layer process include: use vapor phase epitaxy method, on gaas substrates face grow the most successively p-GaAs reef knot layer,
I-GaAs non-doped layer, n-GaAs cushion, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer 3, p-GaAs window
Mouth layer and the heavily doped layer of p-GaAs, form P-N-N-P reef knot epitaxial structure；The manufacturing process of described sub-battery includes: (1) at p-
Isolation channel figure is made by lithography on the heavily doped layer of GaAs；(2) in isolation channel figure, erode the heavily doped layer of p-GaAs successively, remove p-
GaAs Window layer, p-GaAs emission layer, n-GaAs base layer, n-GaAs Window layer, n-GaAs cushion, i-GaAs non-doped layer
With p-GaAs reef knot layer, until expose GaAs substrate as isolation channel bottom, the part being corroded is isolation channel, is not corroded
Part as sub-battery；Every sub-battery makes bottom electrode and upper electrode, the manufacturing process of described sub-battery bottom electrode
Including: on the heavily doped layer of p-GaAs, make lower pole region figure by lithography, in lower pole region figure, erode p-GaAs successively
Heavily doped layer, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer to expose n-GaAs delay
Rush the layer lower pole region as evaporation bottom electrode；Bottom electrode gold lower floor, lower electricity it is deposited with the most successively at lower pole region
Pole germanium layer, bottom electrode silver layer and bottom electrode gold upper strata, complete the manufacturing process of each sub-battery bottom electrode；On described sub-battery
The manufacturing process of electrode includes: make electrode pattern by lithography, according to powering on the heavily doped layer of p-GaAs of each sub-battery
Pole figure on the heavily doped layer of p-GaAs the most successively electrode gold lower floor on evaporation, on electrode silver layer and upper electrode gold
Layer, completes the manufacturing process of electrode on each sub-battery；With interconnecting electrode, upper electrode and the bottom electrode of adjacent subcell are welded
Connecing, the battery forming series connection is overall, battery integral surface is deposited with antireflective coating, scribing, i.e. makes laser power supply of the present invention micro-
Type GaAs battery.
The present invention can also adopt the following technical scheme that
Described interconnecting electrode is spun gold.
Described antireflective coating is surveyed layer by titanium sesquioxide and one silica layer is constituted.
The present invention has the advantage that with good effect:
1, the present invention is by extending the P-N-N-P reef knot epitaxial structure that PN and NP is formed outside face on gaas substrates, makes lining
The end and p-GaAs reef knot layer define reversed bias voltage, serve the effect of current cut-off, solve physics between element cell every
Bottom causing, the problem of leakage current, effectively reduces the leakage current of battery bottom, and epitaxial layer is the thinnest, and thickness is only 9 μm
Hereinafter, reduce the difficulty of the techniques such as later stage corrosion isolation, and be effectively increased epitaxially grown quality.
2, present invention employs spun gold welding interconnecting electrode, it is not necessary to PI glue isolation technology, not only avoid electrode interconnection short circuit,
And technique is simple, effectively reduce the manufacturing cost of product.
Accompanying drawing explanation
Fig. 1 is that laser power supply miniature GaAs battery master prepared by the present invention regards section expansion schematic diagram；
Fig. 2 is laser power supply miniature GaAs battery plan shape schematic diagram prepared by the present invention；
Fig. 3 is laser power supply miniature GaAs cell I-V electric performance test curve chart prepared by the present invention.
In figure: 1, the heavily doped layer of p-GaAs, 2, p-GaAs Window layer, 3, p-GaAs emission layer, 4, n-GaAs base layer, 5, n-
GaAs Window layer, 6, n-GaAs cushion, 7, i-GaAs non-doped layer, 8, p-GaAs reef knot layer, 9, substrate, 10, upper electrode,
11, upper electrode gold lower floor, 12, upper electrode silver layer, 13, upper electrode gold upper strata, 14, bottom electrode, 15, bottom electrode gold lower floor, 16, under
Electrode germanium layer, 17, bottom electrode silver layer, 18, bottom electrode gold upper strata, 19, isolation channel, 20, interconnecting electrode, 21, battery boundary line,
22, bottom isolation channel, 23, lower pole region.
Detailed description of the invention
For the summary of the invention of the present invention, feature and effect can be further appreciated that, hereby enumerate following example, and coordinate accompanying drawing
Describe in detail as follows:
The manufacture method of laser power supply miniature GaAs battery, including preparation GaAs substrate；
The innovative point of the present invention includes:
Substrate makes after reef knot grown epitaxial layer battery；Every sub-battery makes bottom electrode and upper electrode,
Upper electrode and the bottom electrode of adjacent subcell being welded with interconnecting electrode, the battery forming series connection is overall, to battery integral surface
Evaporation antireflective coating, scribing, i.e. make laser power supply of the present invention miniature GaAs battery.
The innovative point of the present invention also includes:
Described substrate is thickness 300 μm, is radially offset from the Semi-insulating GaAs material of 2 °.
The process of described reef knot grown epitaxial layer includes: use vapor phase epitaxy method, on gaas substrates face under
Supreme growth p-GaAs reef knot layer, i-GaAs non-doped layer, n-GaAs cushion, n-GaAs Window layer, n-GaAs base successively
Layer, p-GaAs emission layer 3, p-GaAs Window layer and the heavily doped layer of p-GaAs, form P-N-N-P reef knot epitaxial structure；Described son electricity
The manufacturing process in pond includes: (1) make isolation channel figure by lithography on the heavily doped layer of p-GaAs；(2) corrode successively in isolation channel figure
Fall the heavily doped layer of p-GaAs, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer, n-GaAs Window layer, n-GaAs
Cushion, i-GaAs non-doped layer and p-GaAs reef knot layer, until expose GaAs substrate as isolation channel bottom, be corroded
Part is isolation channel, and the part not being corroded is as sub-battery.
The manufacturing process of described sub-battery bottom electrode includes: make lower pole region figure by lithography on the heavily doped layer of p-GaAs,
In lower pole region figure, erode the heavily doped layer of p-GaAs successively, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs
Base layer and n-GaAs Window layer are to exposing the n-GaAs cushion lower pole region as evaporation bottom electrode；At lower pole region
Evaporation bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer and bottom electrode gold upper strata, complete each height the most successively
The manufacturing process of battery bottom electrode.
On described sub-battery, the manufacturing process of electrode includes: make by lithography on the heavily doped layer of p-GaAs of each sub-battery
Upper electrode pattern, according to upper electrode pattern on the heavily doped layer of p-GaAs the most successively electrode gold lower floor on evaporation, power on
Pole silver layer and upper electrode gold upper strata, complete the manufacturing process of electrode 10 on each sub-battery.
Described interconnecting electrode is spun gold.
Described antireflective coating is surveyed layer by titanium sesquioxide and one silica layer is constituted.
Embodiment:
Step 1, preparing substrate
Select diameter 100mm, thickness 300 μm, be radially offset from the Semi-insulating GaAs material of 2 ° as growing as shown in Figure 1 outside
Prolong the GaAs substrate 9 of layer；
Step 2, reef knot grown epitaxial layer
Use vapor phase epitaxial growth (MOVPE) technology, in step 1 growth thickness the most successively above GaAs substrate
Be i-GaAs non-doped layer 7,2 μm of p-GaAs reef knot layer 8,0.1 μm of 0.3 μm n-GaAs cushion 6,N-
P-GaAs Window layer 2,0.2 μm of p-GaAs emission layer 3,2 μm of n-GaAs base layer 4,1 μm of GaAs Window layer 5,3 μm
The heavily doped layer of p-GaAs 1；Form P-N-N-P reef knot epitaxial structure；
Step 3, make sub-battery
(1) photoetching isolation channel figure
After step 2 completes, GaAs substrate is placed in glue spreader, the heavily doped layer of p-GaAs is coated with last layer glue thick 5 μm with
On BP218 positive photo glue, the rotating speed whirl coating of less than 1000 revs/min, after spin coating, 90 DEG C of drying glues 30 minutes；Use litho machine
With 20mW/cm2Expose 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, with 110 DEG C of post bakes of TR baking oven 30 minutes；
With the area that 2.2mm × 2.2mm is a battery, make by lithography on the heavily doped layer of p-GaAs of diameter 100mm area by reticle
Multiple batteries isolation channel 19 figure as shown in Figure 2；
(2) wet etching isolation channel
In the figure of the isolation channel (1) made by lithography in step 3, successively with volume ratio citric acid saturated solution: H2O2=5:1 conduct
Citric acid corrosive liquid corrodes 3 minutes, removes the heavily doped layer of p-GaAs, and deionized water rinsing falls citric acid corrosive liquid；Corrode with dense HCL
1 minute, removing p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid；Corrode 6 minutes with citric acid corrosive liquid, remove
P-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid；Corrode 1 minute with dense HCL, remove n-
GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid；With citric acid corrosive liquid corrode 4min, remove n-GaAs cushion,
I-GaAs non-doped layer and p-GaAs reef knot layer, deionized water rinsing falls citric acid corrosive liquid, until exposing GaAs substrate conduct
Bottom isolation channel 22, each cell area is corroded and shown in Fig. 2 six uniform isolation channels 19, each cell area of GaAs substrate
On six casting lug thereons isolating as six sub-batteries；
Step 4, making bottom electrode
(1) the figure of photoetching lower pole region
After step 3 completes, GaAs substrate is placed on glue spreader, in every six sub-cell p-GaAs weight that step 3 is made
Mix and on layer, be coated with the BP218 positive photo glue that more than last layer 5 μm is thick, the rotating speed whirl coating of less than 1000 revs/min, after spin coating, 90
DEG C drying glue 30 minutes；With litho machine with 20mW/cm2Expose 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, use thermal resistance
110 DEG C of post bakes of formula baking oven 30 minutes, make the lower electricity of the evaporation bottom electrode shown in Fig. 2 on the heavily doped layer of p-GaAs by lithography by reticle
The figure in territory, polar region 23；
(2) wet etching goes out lower pole region
On the lower pole region figure that (1) step 4 makes by lithography, successively with volume ratio citric acid saturated solution: H2O2=5:1 makees
For citric acid corrosive liquid corrosive attack 3 minutes, getting rid of the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid；With
Dense HCL corrodes 1 minute, gets rid of p-GaAs Window layer, and deionized water rinsing falls dense HCL corrosive liquid；Rotten with citric acid corrosive liquid
Losing 6 minutes, get rid of p-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid；Rotten with dense HCL
Losing 1 minute, get rid of n-GaAs Window layer to exposing n-GaAs cushion, deionized water rinsing falls dense HCL corrosive liquid, Mei Ge electricity
Pool area corrodes the lower pole region 23 evaporation bottom electrode shown in Fig. 1；
(3) evaporation bottom electrode metal level
For preventing battery short circuit, isolation channel is filled PI glue, by vacuum more than 5 × 10-4The high vacuum coating unit of Pa,
Depend on from bottom to top according to the lower pole region shown in Fig. 2 above n-GaAs cushion in each sub-battery lower pole region
Secondary evaporation thickness isBottom electrode gold lower floor 15,Bottom electrode silver layer 17 and of bottom electrode germanium layer 16,5 μmBottom electrode gold upper strata 18, complete the manufacturing process of each sub-battery bottom electrode 14.
Electrode in step 5, making
PI glue is filled in gap between each sub-battery and its bottom electrode, by vacuum more than 5 × 10-4The fine vacuum of Pa
Coater, makes the upper electrode pattern shown in Fig. 2 by reticle by lithography on the heavily doped layer of p-GaAs of each sub-battery, according to
Upper electrode pattern on the heavily doped layer of p-GaAs the most successively evaporation thickness beUpper electrode gold lower floor 11,5 μm
Upper electrode silver layer 12 HeUpper electrode gold upper strata 13, complete the manufacturing process of electrode 10 on each sub-battery；
Step 6, welding interconnecting electrode
With the spun gold of a diameter of 25 μm, upper electrode and the bottom electrode of adjacent subcell in six sub-batteries are welded, form five
Individual gold thread interconnecting electrode 20, makes six sub-battery strings join together；
Step 7, evaporation antireflective coating
After step 6 completes, GaAs substrate is put on the evaporation disc of high vacuum coating unit, by the titanium sesquioxide of 50g-60g
Being respectively charged into crucible with the silicon monoxide of 80g-110g, crucible is placed on evaporation disc；Close the door for vacuum chamber of high vacuum coating unit,
High vacuum coating unit is carried out vacuum more than 5 × 10-4The evacuation of Pa, successively carries out 56n m thickness to battery integral surface
Titanium sesquioxide evaporation and the silicon monoxide vapor deposition of 90nm thickness, battery integral surface forms antireflective coating；
Step 8, scribing
With scribing machine, the battery disk after evaporation antireflective coating is carried out scribing along battery boundary line shown in Fig. 2 21, system
Become the foursquare laser power supply of multiple 2.2mm × 2.2mm miniature GaAs battery, complete profile of the present invention be 2.2mm × 2.2mm,
Epitaxy layer thickness is the manufacture process of the laser power supply miniature GaAs battery of 9 μm.
The electric performance test of laser power supply miniature GaAs battery:
Owing to whether the electric leakage being sized to reaction cell of short circuit current and fill factor, curve factor is effectively controlled.Use and swash
The laser power supply that the present invention is prepared by the adjustable laser that optical wavelength 830nm, power are 600mW, fibre diameter is 1.8mm is micro-
Type GaAs battery carries out I-V electric performance test and battery bottom leakage tests, the test data as shown in table 1 and Fig. 3: open circuit electricity
Pressure is 6.5V, and short circuit current reaches 47.2mA, fill factor, curve factor is 67%, and at maximum power point, magnitude of voltage reaches 5.4V.Experiment knot
Fruit illustrates that the battery not only thickness that the present invention manufactures is thin, epitaxial growth and integral battery door processing technology is simple, low cost, and
Obvious effect is served to reducing battery bottom electric leakage.
Table 1 battery bottom leakage tests tables of data
| Open-circuit voltage (V) | Short circuit current (mA) | Fill factor, curve factor (%) | Magnitude of voltage (V) at maximum power point |
| 6.5 | 47.2 | 67 | 5.4 |
Although the preferred embodiments of the present invention being described above in conjunction with accompanying drawing, but the invention is not limited in
The detailed description of the invention stated, above-mentioned detailed description of the invention is only schematically, is not restrictive, this area common
Technical staff, under the enlightenment of the present invention, in the case of without departing from present inventive concept and scope of the claimed protection, also may be used
To make a lot of form, within these belong to protection scope of the present invention.
Claims (3)
1. the manufacture method of laser power supply miniature GaAs battery, including preparation GaAs substrate, it is characterised in that: thickness 300 μm,
Sub-battery, described reef knot growth extension is made after reef knot grown epitaxial layer on the substrate of the Semi-insulating GaAs material being radially offset from 2 °
Layer process include: use vapor phase epitaxy method, on gaas substrates face grow the most successively p-GaAs reef knot layer,
I-GaAs non-doped layer, n-GaAs cushion, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer 3, p-GaAs window
Mouth layer and the heavily doped layer of p-GaAs, form P-N-N-P reef knot epitaxial structure；The manufacturing process of described sub-battery includes: (1) at p-
Isolation channel figure is made by lithography on the heavily doped layer of GaAs；(2) in isolation channel figure, erode the heavily doped layer of p-GaAs successively, remove p-
GaAs Window layer, p-GaAs emission layer, n-GaAs base layer, n-GaAs Window layer, n-GaAs cushion, i-GaAs non-doped layer
With p-GaAs reef knot layer, until expose GaAs substrate as isolation channel bottom, the part being corroded is isolation channel, is not corroded
Part as sub-battery；Every sub-battery makes bottom electrode and upper electrode, the manufacturing process of described sub-battery bottom electrode
Including: on the heavily doped layer of p-GaAs, make lower pole region figure by lithography, in lower pole region figure, erode p-GaAs successively
Heavily doped layer, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer to expose n-GaAs delay
Rush the layer lower pole region as evaporation bottom electrode；Bottom electrode gold lower floor, lower electricity it is deposited with the most successively at lower pole region
Pole germanium layer, bottom electrode silver layer and bottom electrode gold upper strata, complete the manufacturing process of each sub-battery bottom electrode；On described sub-battery
The manufacturing process of electrode includes: make electrode pattern by lithography, according to powering on the heavily doped layer of p-GaAs of each sub-battery
Pole figure on the heavily doped layer of p-GaAs the most successively electrode gold lower floor on evaporation, on electrode silver layer and upper electrode gold
Layer, completes the manufacturing process of electrode on each sub-battery；With interconnecting electrode, upper electrode and the bottom electrode of adjacent subcell are welded
Connecing, the battery forming series connection is overall, battery integral surface is deposited with antireflective coating, scribing, i.e. makes laser power supply of the present invention micro-
Type GaAs battery.
The manufacture method of laser power supply the most according to claim 1 miniature GaAs battery, it is characterised in that: described interconnection electricity
Extremely spun gold.
The manufacture method of laser power supply the most according to claim 1 miniature GaAs battery, it is characterised in that: described antireflective
Film is made up of titanium sesquioxide layer and one silica layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310308181.XA CN104332525B (en) | 2013-07-22 | 2013-07-22 | The manufacture method of laser power supply miniature GaAs battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310308181.XA CN104332525B (en) | 2013-07-22 | 2013-07-22 | The manufacture method of laser power supply miniature GaAs battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104332525A CN104332525A (en) | 2015-02-04 |
| CN104332525B true CN104332525B (en) | 2016-12-28 |
Family
ID=52407217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310308181.XA Active CN104332525B (en) | 2013-07-22 | 2013-07-22 | The manufacture method of laser power supply miniature GaAs battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104332525B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256895B (en) * | 2017-05-23 | 2018-09-04 | 西安航谷微波光电科技有限公司 | A kind of production method of high-performance GaAs laser batteries |
| CN111952398A (en) * | 2019-05-17 | 2020-11-17 | 清华大学 | Balance detector and preparation method thereof |
| CN110534601A (en) * | 2019-08-14 | 2019-12-03 | 上海空间电源研究所 | A kind of solar cell and preparation method thereof of band protection integrated bypass diode |
| CN115020547B (en) * | 2022-07-12 | 2024-05-28 | 中国电子科技集团公司第十八研究所 | Forming process of laser photovoltaic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN103117286A (en) * | 2013-01-31 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and production method thereof |
-
2013
- 2013-07-22 CN CN201310308181.XA patent/CN104332525B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN103117286A (en) * | 2013-01-31 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Laser photovoltaic cell and production method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 激光供能微型GaAs电池;梁存宝 等;《电源技术》;20120731;第36卷(第7期);正文第1015、1016、1029页以及附图1-7 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104332525A (en) | 2015-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104332525B (en) | The manufacture method of laser power supply miniature GaAs battery | |
| CN109273545A (en) | A kind of production method of cadmium telluride diaphragm solar battery component | |
| CN107134531B (en) | A kind of increase perovskite CH3NH3PbI3Crystal grain is to improve the method for film crystalline quality | |
| CN101728458B (en) | Preparation method of multi-junction solar cell | |
| US20170069782A1 (en) | Four-Junction Solar Cell and Fabrication Method | |
| CN105762219B (en) | Cuprous oxide-based multi-lamination heterojunction solar cell and preparation method thereof | |
| CN110120438B (en) | Preparation method of solar cell based on metal flexible substrate | |
| Baek et al. | Characterization of optical absorption and photovoltaic properties of silicon wire solar cells with different aspect ratio | |
| CN105576128A (en) | Method for controlling features of light absorption layer of perovskite solar battery | |
| CN110491964A (en) | A kind of flexible double-sided solar battery and preparation method thereof | |
| WO2022001037A1 (en) | Method for preparing monocrystalline silicon material by means of high-temperature electrodeposition of molten salt | |
| JP2016531428A (en) | Composite structure silicon wafer, method for producing the same, and solar cell using the same | |
| CN104332479B (en) | A kind of miniature GaAs battery of laser power supply | |
| CN210866245U (en) | Gallium nitride micron line array photoelectric detector | |
| CN103872179B (en) | A kind of preparation method improving thin-film solar cells efficiency | |
| CN203398114U (en) | Ultrathin miniature GaAs cell with leakage current prevention | |
| CN108258062B (en) | Gallium arsenide solar cell and preparation method thereof | |
| CN105977318A (en) | Sodium-doped CIGS (copper indium gallium selenide) film based on composite substrate and preparation method thereof | |
| CN103123923B (en) | A kind of laser photovoltaic cell and preparation method thereof | |
| CN102593198B (en) | Manufacturing method of II-VI group laminating integrated nano photovoltaic device and | |
| CN104600195A (en) | Perovskite solar battery and preparation method thereof | |
| CN107482123A (en) | A kind of preparation method for being bonded self-enclosure type organic solar batteries | |
| CN102709340A (en) | Heterojunction solar cell of inclined metal contact structure based on N type silicon wafer | |
| CN111599881B (en) | Single crystal cuprous oxide composite semiconductor nano generator and manufacturing method thereof | |
| CN106898666B (en) | A kind of radial direction (110) body silicon solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221117 Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Energy Co.,Ltd. Address before: No. 6, Haitai Huake 7th Road, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: The 18th Research Institute of China Electronics Technology Group Corporation |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Blue Sky Technology Co.,Ltd. Address before: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: CETC Energy Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |