CN104332525A - Method for manufacturing laser powered miniature GaAs battery - Google Patents
Method for manufacturing laser powered miniature GaAs battery Download PDFInfo
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- CN104332525A CN104332525A CN201310308181.XA CN201310308181A CN104332525A CN 104332525 A CN104332525 A CN 104332525A CN 201310308181 A CN201310308181 A CN 201310308181A CN 104332525 A CN104332525 A CN 104332525A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 170
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000002955 isolation Methods 0.000 claims abstract description 26
- 238000001704 evaporation Methods 0.000 claims abstract description 23
- 230000008020 evaporation Effects 0.000 claims abstract description 23
- 238000003466 welding Methods 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 25
- 239000010931 gold Substances 0.000 claims description 25
- 229910052737 gold Inorganic materials 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 238000001459 lithography Methods 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000006748 scratching Methods 0.000 abstract 1
- 230000002393 scratching effect Effects 0.000 abstract 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 36
- 239000007788 liquid Substances 0.000 description 14
- 239000003292 glue Substances 0.000 description 12
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000011056 performance test Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000012047 saturated solution Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a method for manufacturing a laser powered miniature GaAs battery, which comprises preparing a GaAs substrate. The method is characterized by comprising the steps of: after reversely growing an epitaxial layer on the substrate, manufacturing sub-batteries; manufacturing a lower electrode and an upper electrode on each sub-battery, welding the upper electrode of each sub-battery with the lower electrode of an adjacent battery through interconnected electrodes for forming a serial-connected battery body, and performing reflection reducing film evaporation and scratching on the surface of the battery body, thereby preparing the laser powered miniature GaAs battery. According to the method, through a reverse-grown P-N-N-P epitaxial structure which is formed by an epitaxial PN and NP on the GaAs substrate, a reversed bias voltage is formed, thereby performing a current cut-off function, settling a problem of bottom leakage current caused by physical isolation between the sub-batteries and effectively reducing leakage current at the bottom of the battery. Furthermore the thickness of the epitaxial layer is smaller than 9 mu m, thereby reducing difficulties of later-period processes such as corrosion and isolation, and effectively improving epitaxial growth quality.
Description
Technical field
The invention belongs to photoelectric conversion technique field, particularly relate to the manufacture method of the miniature GaAs battery of a kind of laser power supply.
Background technology
The miniature GaAs battery of laser power supply is the battery adopting laser to generate electricity as energy of light source.Due to the light source that laser is the best Single wavelength of frequency response, and sunlight is full spectrum, therefore the electric current that the miniature GaAs battery of the laser power supply of same units area produces is far longer than the electric current that sunlight energy supply battery produces, define stable big current effect, and laser power supply miniature GaAs battery also have volume little, lightweight, not by radio wave and the feature such as electromagnetic interference, safety; Current, the miniature GaAs battery of laser power supply mainly as the driving power of MEMS (micro electro mechanical system) (MEMS), and has a wide range of applications in each fields such as electric power, radio communication, medical treatment, Aero-Space.
At present, laser power supply miniature GaAs battery primary structure is multiple sub-battery of connecting on the GaAs substrate of spot size area; Owing to being cascaded structure, have the advantages that open circuit voltage is high, but there is the large problem of bottom leakage current simultaneously, therefore significantly reduce the result of use of the miniature GaAs battery of laser power supply.In order to reduce the bottom leakage current of the miniature GaAs battery of laser power supply, the method adopted is the thickness increasing each grown layer in GaAs epitaxial structure mostly, especially increase the thickness (reaching 10 μm ~ 20 μm) of resilient coating, achieve the effect reducing battery bottom leakage current; But due to the laser power supply miniature GaAs battery epitaxy layer thickness large (reaching 18 μ ~ 28 μm) that the method is made, not only epitaxial growth is complicated, cost is high, and adds the difficulty of battery post-production technique.
Summary of the invention
The present invention for solve in known technology the technical problem that exists and provide that a kind of thickness is thin, epitaxial growth and integral battery door manufacture craft is simple, cost is low, and the manufacture method of the little miniature GaAs battery of laser power supply of battery bottom leakage current.
The technical scheme that the present invention takes is:
The manufacture method of the miniature GaAs battery of laser power supply, comprises preparation GaAs substrate, is characterized in: on substrate, make sub-battery after reef knot grown epitaxial layer; Every sub-battery makes bottom electrode and top electrode, with interconnecting electrode by the top electrode of adjacent subcell and bottom electrode welding, form the cell integrated of series connection, to cell integrated surperficial evaporation antireflective coating, scribing, namely make the miniature GaAs battery of laser power supply of the present invention.
The present invention can also adopt following technical scheme:
Described substrate is thickness 300 μm, radial direction departs from the Semi-insulating GaAs material of 2 °.
The process of described reef knot grown epitaxial layer comprises: adopt vapor phase epitaxy method, face grows p-GaAs reef knot layer, i-GaAs non-doped layer, n-GaAs resilient coating, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer 3, p-GaAs Window layer and the heavily doped layer of p-GaAs from bottom to top successively on gaas substrates, forms P-N-N-P reef knot epitaxial structure; The manufacturing process of described sub-battery comprises: (1) on the heavily doped layer of p-GaAs, make isolation channel figure by lithography; (2) in isolation channel figure, erode the heavily doped layer of p-GaAs successively, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer, n-GaAs Window layer, n-GaAs resilient coating, i-GaAs non-doped layer and p-GaAs reef knot layer, until expose GaAs substrate as bottom isolation channel, the part be corroded is isolation channel, and the part be not corroded is as sub-battery.
The manufacturing process of described sub-battery bottom electrode comprises: on the heavily doped layer of p-GaAs, make lower electrode area territory figure by lithography, erodes the heavily doped layer of p-GaAs successively, removes p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer be to exposing the bottom electrode region of n-GaAs resilient coating as evaporation bottom electrode in bottom electrode regional graphics; Evaporation bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer and bottom electrode gold upper strata successively from bottom to top in bottom electrode region, complete the manufacturing process of each sub-battery bottom electrode.
The manufacturing process of described sub-battery top electrode comprises: on the heavily doped layer of p-GaAs of each sub-battery, make top electrode figure by lithography, according to top electrode figure evaporation top electrode gold lower floor, top electrode silver layer and top electrode gold upper strata successively from bottom to top on the heavily doped layer of p-GaAs, complete the manufacturing process of each sub-battery top electrode 10.
Described interconnecting electrode is spun gold.
Described antireflective coating surveys layer by titanium sesquioxide and one silica layer is formed.
The advantage that the present invention has and good effect are:
1, the P-N-N-P reef knot epitaxial structure that formed by extending PN and NP outside face on gaas substrates of the present invention, substrate and p-GaAs reef knot layer is made to define reversed bias voltage, serve the effect of current cut-off, the physical isolation solved between element cell causes the problem of bottom leakage current, effectively reduce the leakage current of battery bottom, and epitaxial loayer is very thin, thickness is only less than 9 μm, reduce the difficulty of the techniques such as later stage corrosion isolation, and effectively improve epitaxially grown quality.
2, present invention employs spun gold welding interconnecting electrode, without the need to PI glue isolation technology, not only avoid the interconnected short circuit of electrode, and technique is simple, the manufacturing cost that effectively reduces product.
Accompanying drawing explanation
Fig. 1 is that laser power supply miniature GaAs battery master prepared by the present invention looks section expansion schematic diagram;
Fig. 2 is laser power supply miniature GaAs battery plan shape schematic diagram prepared by the present invention;
Fig. 3 is laser power supply miniature GaAs cell I-V electric performance test curve chart prepared by the present invention.
In figure: 1, the heavily doped layer of p-GaAs, 2, p-GaAs Window layer, 3, p-GaAs emission layer, 4, n-GaAs base layer, 5, n-GaAs Window layer, 6, n-GaAs resilient coating, 7, i-GaAs non-doped layer, 8, p-GaAs reef knot layer, 9, substrate, 10, top electrode, 11, top electrode gold lower floor, 12, top electrode silver layer, 13, top electrode gold upper strata, 14, bottom electrode, 15, bottom electrode gold lower floor, 16, bottom electrode germanium layer, 17, bottom electrode silver layer, 18, bottom electrode gold upper strata, 19, isolation channel, 20, interconnecting electrode, 21, battery boundary line, 22, bottom isolation channel, 23, bottom electrode region.
Embodiment
For summary of the invention of the present invention, Characteristic can be understood further, hereby exemplify following examples, and coordinate accompanying drawing to be described in detail as follows:
The manufacture method of the miniature GaAs battery of laser power supply, comprises preparation GaAs substrate;
Innovative point of the present invention comprises:
Substrate makes sub-battery after reef knot grown epitaxial layer; Every sub-battery makes bottom electrode and top electrode, with interconnecting electrode by the top electrode of adjacent subcell and bottom electrode welding, form the cell integrated of series connection, to cell integrated surperficial evaporation antireflective coating, scribing, namely make the miniature GaAs battery of laser power supply of the present invention.
Innovative point of the present invention also comprises:
Described substrate is thickness 300 μm, radial direction departs from the Semi-insulating GaAs material of 2 °.
The process of described reef knot grown epitaxial layer comprises: adopt vapor phase epitaxy method, face grows p-GaAs reef knot layer, i-GaAs non-doped layer, n-GaAs resilient coating, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer 3, p-GaAs Window layer and the heavily doped layer of p-GaAs from bottom to top successively on gaas substrates, forms P-N-N-P reef knot epitaxial structure; The manufacturing process of described sub-battery comprises: (1) on the heavily doped layer of p-GaAs, make isolation channel figure by lithography; (2) in isolation channel figure, erode the heavily doped layer of p-GaAs successively, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer, n-GaAs Window layer, n-GaAs resilient coating, i-GaAs non-doped layer and p-GaAs reef knot layer, until expose GaAs substrate as bottom isolation channel, the part be corroded is isolation channel, and the part be not corroded is as sub-battery.
The manufacturing process of described sub-battery bottom electrode comprises: on the heavily doped layer of p-GaAs, make lower electrode area territory figure by lithography, erodes the heavily doped layer of p-GaAs successively, removes p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer be to exposing the bottom electrode region of n-GaAs resilient coating as evaporation bottom electrode in bottom electrode regional graphics; Evaporation bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer and bottom electrode gold upper strata successively from bottom to top in bottom electrode region, complete the manufacturing process of each sub-battery bottom electrode.
The manufacturing process of described sub-battery top electrode comprises: on the heavily doped layer of p-GaAs of each sub-battery, make top electrode figure by lithography, according to top electrode figure evaporation top electrode gold lower floor, top electrode silver layer and top electrode gold upper strata successively from bottom to top on the heavily doped layer of p-GaAs, complete the manufacturing process of each sub-battery top electrode 10.
Described interconnecting electrode is spun gold.
Described antireflective coating surveys layer by titanium sesquioxide and one silica layer is formed.
Embodiment:
Step 1, preparing substrate
The Semi-insulating GaAs material selecting diameter 100mm, thickness 300 μm, radial direction to depart from 2 ° is as the GaAs substrate 9 of grown epitaxial layer as shown in Figure 1;
Step 2, reef knot grown epitaxial layer
Adopt vapor phase epitaxial growth (MOVPE) technology, in step 1 above GaAs substrate from bottom to top successively growth thickness be the i-GaAs non-doped layer 7,2 μm of 8,0.1 μm, the p-GaAs reef knot layer of 0.3 μm n-GaAs resilient coating 6,
the heavily doped layer 1 of p-GaAs of p-GaAs Window layer 2,0.2 μm of p-GaAs emission layer 3,2 μm of n-GaAs base layer 4,1 μm of n-GaAs Window layer 5,3 μm; Form P-N-N-P reef knot epitaxial structure;
Step 3, make sub-battery
(1) photoetching isolation channel figure
After step 2 completes, GaAs substrate is placed in glue spreader, the heavily doped layer of p-GaAs is coated with the thick BP218 positive photo glue more than 5 μm of last layer glue, the rotating speed whirl coating of less than 1000 revs/min, after even glue, 90 DEG C of drying glues 30 minutes; With mask aligner with 20mW/cm
2expose 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, with TR baking oven 110 DEG C of post bakes 30 minutes; With the area that 2.2mm × 2.2mm is a battery, on the heavily doped layer of p-GaAs of diameter 100mm area, make multiple battery isolation channel 19 figure as shown in Figure 2 by lithography by reticle;
(2) wet etching isolation channel
In the figure of the isolation channel (1) made by lithography in step 3, use volume ratio citric acid saturated solution successively: H
2o
2=5:1 corrodes 3 minutes as citric acid corrosive liquid, and remove the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, remove p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid; Corrode 6 minutes with citric acid corrosive liquid, remove p-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, remove n-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid; With citric acid corrosive liquid corrosion 4min, remove n-GaAs resilient coating, i-GaAs non-doped layer and p-GaAs reef knot layer, deionized water rinsing falls citric acid corrosive liquid, until expose GaAs substrate as bottom isolation channel 22, each cell area to erode away shown in Fig. 2 six casting lug thereons that six uniform each cell area of isolation channel 19, GaAs substrate isolate as six sub-batteries;
Step 4, making bottom electrode
(1) the figure in photoetching bottom electrode region
After step 3 completes, GaAs substrate is placed on glue spreader, every six heavily doped layers of sub-cell p-GaAs that step 3 is made are coated with the thick BP218 positive photo glue of last layer more than 5 μm, the rotating speed whirl coating of less than 1000 revs/min, after even glue, 90 DEG C of drying glues 30 minutes; With mask aligner with 20mW/cm
2expose 12 seconds, room temperature environment 1%NaOH solution development 35 seconds, with TR baking oven 110 DEG C of post bakes 30 minutes, on the heavily doped layer of p-GaAs, make the figure in the bottom electrode region 23 of the evaporation bottom electrode shown in Fig. 2 by lithography by reticle;
(2) wet etching goes out bottom electrode region
On the bottom electrode regional graphics that (1) step 4 makes by lithography, use volume ratio citric acid saturated solution successively: H
2o
2=5:1 was as citric acid corrosive liquid corrosive attack 3 minutes, and get rid of the heavily doped layer of p-GaAs, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, get rid of p-GaAs Window layer, deionized water rinsing falls dense HCL corrosive liquid; Corrode 6 minutes with citric acid corrosive liquid, get rid of p-GaAs emission layer and n-GaAs base layer, deionized water rinsing falls citric acid corrosive liquid; Corrode 1 minute with dense HCL, get rid of n-GaAs Window layer to exposing n-GaAs resilient coating, deionized water rinsing falls dense HCL corrosive liquid, and each cell area erodes away the bottom electrode region 23 of the bottom electrode of evaporation shown in Fig. 1;
(3) evaporation bottom electrode metal level
For preventing battery short circuit, in isolation channel, filling PI glue, be greater than 5 × 10 by vacuum degree
-4the high vacuum coating unit of Pa, above the n-GaAs resilient coating in each sub-battery bottom electrode region according to the bottom electrode region shown in Fig. 2 from bottom to top successively evaporation thickness be
bottom electrode gold lower floor 15,
bottom electrode silver layer 17 and of bottom electrode germanium layer 16,5 μm
bottom electrode gold upper strata 18, complete the manufacturing process of each sub-battery bottom electrode 14.
Step 5, making top electrode
PI glue is filled in gap between each sub-battery and its bottom electrode, is greater than 5 × 10 by vacuum degree
-4the high vacuum coating unit of Pa, makes the top electrode figure shown in Fig. 2 by reticle by lithography on the heavily doped layer of p-GaAs of each sub-battery, according to top electrode figure on the heavily doped layer of p-GaAs from bottom to top successively evaporation thickness be
top electrode gold lower floor 11,5 μm top electrode silver layer 12 and
top electrode gold upper strata 13, complete the manufacturing process of each sub-battery top electrode 10;
Step 6, welding interconnecting electrode
The spun gold with diameter being 25 μm, to the top electrode of adjacent subcell in six sub-batteries and bottom electrode welding, forms five gold thread interconnecting electrodes 20, makes six sub-serial battery integral;
Step 7, evaporation antireflective coating
After step 6 completes, GaAs substrate is put on the evaporation disc of high vacuum coating unit, and the titanium sesquioxide of 50g-60g and the silicon monoxide of 80g-110g are respectively charged into crucible, and crucible is placed on evaporation disc; Close the door for vacuum chamber of high vacuum coating unit, vacuum degree is carried out to high vacuum coating unit and is greater than 5 × 10
-4pa vacuumizes, and successively carry out the thick titanium sesquioxide evaporation of 56n m and the thick silicon monoxide vapor deposition of 90nm to cell integrated surface, cell integrated surface forms antireflective coating;
Step 8, scribing
With scribing machine, the battery disk after evaporation antireflective coating is carried out scribing along the boundary line of battery shown in Fig. 2 21, make the miniature GaAs battery of the foursquare laser power supply of multiple 2.2mm × 2.2mm, complete the manufacture process that profile of the present invention is 2.2mm × 2.2mm, epitaxy layer thickness is the miniature GaAs battery of laser power supply of 9 μm.
The electric performance test of the miniature GaAs battery of laser power supply:
Because whether the size of short circuit current and fill factor, curve factor can be effectively controlled in the electric leakage of reaction cell.The adjustable laser that employing optical maser wavelength 830nm, power are 600mW, fibre diameter is 1.8mm carries out I-V electric performance test and battery bottom leakage tests to the miniature GaAs battery of laser power supply prepared by the present invention, test data as shown in table 1 and Fig. 3: open circuit voltage is 6.5V, short circuit current reaches 47.2mA, fill factor, curve factor is 67%, and maximum power point place magnitude of voltage reaches 5.4V.Experimental result describes the battery that the present invention manufactures, and not only thickness is thin, epitaxial growth and integral battery door manufacture craft is simple, cost is low, and serves obvious effect to what reduce battery bottom electric leakage.
Table 1 battery bottom leakage tests tables of data
| Open circuit voltage (V) | Short circuit current (mA) | Fill factor, curve factor (%) | Maximum power point place magnitude of voltage (V) |
| 6.5 | 47.2 | 67 | 5.4 |
Although be described the preferred embodiments of the present invention by reference to the accompanying drawings above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; do not departing under the ambit that present inventive concept and claim protect, can also make a lot of form, these all belong within protection scope of the present invention.
Claims (7)
1. the manufacture method of the miniature GaAs battery of laser power supply, comprises preparation GaAs substrate, it is characterized in that: on substrate, make sub-battery after reef knot grown epitaxial layer; Every sub-battery makes bottom electrode and top electrode, with interconnecting electrode by the top electrode of adjacent subcell and bottom electrode welding, form the cell integrated of series connection, to cell integrated surperficial evaporation antireflective coating, scribing, namely make the miniature GaAs battery of laser power supply of the present invention.
2. the manufacture method of the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: described substrate is thickness 300 μm, radial direction departs from the Semi-insulating GaAs material of 2 °.
3. the manufacture method of the miniature GaAs battery of laser power supply according to claim 1 and 2, it is characterized in that: the process of described reef knot grown epitaxial layer comprises: adopt vapor phase epitaxy method, face grows p-GaAs reef knot layer, i-GaAs non-doped layer, n-GaAs resilient coating, n-GaAs Window layer, n-GaAs base layer, p-GaAs emission layer 3, p-GaAs Window layer and the heavily doped layer of p-GaAs from bottom to top successively on gaas substrates, forms P-N-N-P reef knot epitaxial structure; The manufacturing process of described sub-battery comprises: (1) on the heavily doped layer of p-GaAs, make isolation channel figure by lithography; (2) in isolation channel figure, erode the heavily doped layer of p-GaAs successively, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer, n-GaAs Window layer, n-GaAs resilient coating, i-GaAs non-doped layer and p-GaAs reef knot layer, until expose GaAs substrate as bottom isolation channel, the part be corroded is isolation channel, and the part be not corroded is as sub-battery.
4. the manufacture method of the miniature GaAs battery of laser power supply according to claim 3, it is characterized in that: the manufacturing process of described sub-battery bottom electrode comprises: on the heavily doped layer of p-GaAs, make lower electrode area territory figure by lithography, in bottom electrode regional graphics, erode the heavily doped layer of p-GaAs successively, remove p-GaAs Window layer, p-GaAs emission layer, n-GaAs base layer and n-GaAs Window layer be to exposing the bottom electrode region of n-GaAs resilient coating as evaporation bottom electrode; Evaporation bottom electrode gold lower floor, bottom electrode germanium layer, bottom electrode silver layer and bottom electrode gold upper strata successively from bottom to top in bottom electrode region, complete the manufacturing process of each sub-battery bottom electrode.
5. the manufacture method of the miniature GaAs battery of laser power supply according to claim 3, it is characterized in that: the manufacturing process of described sub-battery top electrode comprises: on the heavily doped layer of p-GaAs of each sub-battery, make top electrode figure by lithography, according to top electrode figure evaporation top electrode gold lower floor, top electrode silver layer and top electrode gold upper strata successively from bottom to top on the heavily doped layer of p-GaAs, complete the manufacturing process of each sub-battery top electrode 10.
6. the manufacture method of the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: described interconnecting electrode is spun gold.
7. the manufacture method of the miniature GaAs battery of laser power supply according to claim 1, is characterized in that: described antireflective coating surveys layer by titanium sesquioxide and one silica layer is formed.
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| CN110534601A (en) * | 2019-08-14 | 2019-12-03 | 上海空间电源研究所 | A kind of solar cell and preparation method thereof of band protection integrated bypass diode |
| CN111952398A (en) * | 2019-05-17 | 2020-11-17 | 清华大学 | Balance detector and preparation method thereof |
| CN115020547A (en) * | 2022-07-12 | 2022-09-06 | 中国电子科技集团公司第十八研究所 | Forming process of laser photovoltaic device |
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| CN111952398A (en) * | 2019-05-17 | 2020-11-17 | 清华大学 | Balance detector and preparation method thereof |
| CN110534601A (en) * | 2019-08-14 | 2019-12-03 | 上海空间电源研究所 | A kind of solar cell and preparation method thereof of band protection integrated bypass diode |
| CN115020547A (en) * | 2022-07-12 | 2022-09-06 | 中国电子科技集团公司第十八研究所 | Forming process of laser photovoltaic device |
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Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Blue Sky Technology Co.,Ltd. Address before: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: CETC Energy Co.,Ltd. |