CN107134499B - Composite curved surface light trapping structure and preparation method thereof - Google Patents
Composite curved surface light trapping structure and preparation method thereof Download PDFInfo
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- CN107134499B CN107134499B CN201710366413.5A CN201710366413A CN107134499B CN 107134499 B CN107134499 B CN 107134499B CN 201710366413 A CN201710366413 A CN 201710366413A CN 107134499 B CN107134499 B CN 107134499B
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- 239000002131 composite material Substances 0.000 title abstract description 13
- 238000002360 preparation method Methods 0.000 title description 4
- 239000010408 film Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 11
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 230000003595 spectral effect Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses composite curved surface light trapping structures for improving the efficiency of a thin film silicon solar cell, which are composed of periodic unit light trapping structures as a whole, each unit is composed of a composite curved surface, layers of transparent passivation films are covered on the unit light trapping structures, except for the outermost curved surface, 3 groups of curved surfaces (two in the x direction are groups, two in the y direction are groups, and 4 in the inclined direction are groups) are arranged between each curved surface and the closest 8 identical curved surfaces, the three groups of curved surfaces are different from each other, any two adjacent curved surfaces are smoothly connected with each other at the respective lowest points so as to avoid strong reflection to a certain angle caused by sharp surfaces, as shown in the figure, the curved surface marked as 1 is group, the curved surface marked as 2 is group, the curved surface marked as 3 is group, the curved surface marked as 4 is group, the curved surfaces of each group have the same period and are compounded at .
Description
Technical Field
The invention relates to the field of novel clean energy and micro-nano photons, in particular to a composite curved surface light trapping structure of solar cells and a preparation method thereof.
Background
The photovoltaic cell which is the dominant photovoltaic cell in the market at present is a crystalline silicon cell, which has the advantages of mature process, stable performance and high photoelectric conversion efficiency, the assembly efficiency of commercial production currently exceeds 19 percent, and the highest efficiency of a cell slice also reaches 25.6 percent.
At present, , the light trapping structure is an effective method for solving the optical loss, and the light trapping structure is that special structures are made on the surface of the solar cell, so that the absorption rate of sunlight can be increased.
The light trapping structures for thin film silicon solar cells studied internationally today can be divided into two categories: random surface transparent conductive glass and inverted pyramid periodic structures.
The random surface light trapping structure has a simple process and low cost, can prolong the optical path in the absorption layer, and has poor light enhancement and absorption capacity.
The inverted pyramid nanostructure is kinds of periodic structures, and the light absorption effect with better spectral and angular response can be well obtained by optimizing the periodic structures, but the structure has limitations, is only suitable for monocrystalline silicon cells, and secondly, the structure is usually obtained by adopting a deep ultraviolet photoetching method, so the preparation cost is higher.
Disclosure of Invention
Aiming at the technical defects, the invention designs composite curved surface light trapping structures which theoretically have better performance than an inverted pyramid structure, and the structures can be prepared on a large-area silicon wafer at low cost.
In order to improve the absorptivity of light in different wave bands, four different curved surfaces exist in each period of the structure, so that the absorptivity of the whole sunlight wave band can be comprehensively improved.
The invention adopts the following technical scheme:
light trapping structure for thin film solar cell, wherein the structure surface has periodic compound curved surface, and layers of passivation film are covered on the curved surface.
In addition to the outermost curved surfaces, 3 groups of curved surfaces ( groups for two in the x direction, groups for two in the y direction, and groups for 4 in the oblique direction) are spaced between each curved surface and the 8 identical curved surfaces which are the closest to each other, and the three groups of curved surfaces are different from each other, and any two adjacent curved surfaces are smoothly connected with each other at the respective lowest points.
Moreover, the method for manufacturing the composite curved light trapping structure is characterized by comprising the following steps:
a process of manufacturing a light trapping structure having a surface with a complex curved surface using an interference method, and,
and forming a passivation layer on the compound curved surface light trapping structure.
In the resist mask required for preparing the light trapping structure, 3 sets of curved surfaces (two in the x direction are sets, two in the y direction are sets, and 4 in the oblique direction are sets) are spaced between each curved surface and the nearest 8 identical curved surfaces except for the outermost curved surface, and the three sets of curved surfaces are different from each other, and any two adjacent curved surfaces are smoothly connected with each other at the respective lowest points.
The structure is arranged on the light-facing surface of the cell and is used for reducing the reflectivity of the surface light and increasing the optical path of light inside the solar cell, so that the short-circuit current density of the cell is increased.
Compared with the prior art, the invention has the following excellent properties:
, the structure is formed by compounding a plurality of curved surfaces, and can enhance the absorptivity of light in a plurality of wave bands, thereby improving the absorptivity of the solar cell as a whole.
Secondly, the curved surface of the structure is connected smoothly, and the reflectivity of angles is effectively prevented from being enhanced due to sharp surfaces.
The method for preparing the composite curved surface light trapping structure is a multi-step interference method, and can prepare large areas (larger than 1 m)2) The light trapping structure has good uniformity, which cannot be achieved by the previous method.
The structure does not depend on the properties of the material, so that the structure can be prepared on various materials.
Drawings
FIG. 1 is a schematic diagram of a solar cell with a compound curved light trapping structure;
FIG. 2 is a spectral response of a structure;
FIG. 3 is an angular spectral response of a structure;
Detailed Description
The invention proceeds to the description of step with reference to the drawings and the detailed description:
the specific shape of the structure is shown in fig. 1, except for the outermost curved surface, 3 groups of curved surfaces (two in the x direction are groups, two in the y direction are groups, and 4 in the inclined direction are groups) are spaced between each curved surface and the closest 8 identical curved surfaces, the three groups of curved surfaces are different from each other, and any two adjacent curved surfaces are smoothly connected with each other at the respective lowest points.
The method for preparing the light trapping structure comprises the following steps:
, preparing a compound curved mask on the resist by four-step interference method, which comprises (1) forming a resist film on a substrate, (2) exposing the resist film with a 1 st interference fringe with light intensity varying along the 1 st direction, (3) exposing the resist film with a 2 nd interference fringe with light intensity varying along the 2 nd direction perpendicular to the 1 st direction, (4) exposing the resist film with a 3 rd interference fringe with light intensity varying along the 1 st direction with a fringe period twice that of the 1 st interference fringe, (5) exposing the resist film with a 4 th interference fringe with light intensity varying along the 2 nd direction with a fringe period twice that of the 2 nd interference fringe, and (6) developing the resist film after all the fringes are exposed.
And step two, transferring the pattern on the resist to the surface of the silicon wafer serving as the substrate by using a chemical or physical method, wherein the chemical or physical method comprises but is not limited to a reactive ion etching method and a plasma etching method.
And step three, washing away residual reactants to obtain the composite curved surface light trapping structure on the solar cell.
And step four, covering layers of passivation films on the surface of the compound curved surface light trapping structure by methods such as vacuum sputtering film formation and the like.
The following description will be given with reference to examples.
Example (b):
in the embodiment, the period of the structure to be prepared is 1 μm, the size of each curved surface in the structure is 500nm x 500nm, the height difference between the highest point and the lowest point of the structure is 300nm, and silicon is used as a substrate.
The method comprises the steps of uniformly coating layers of AZ6112 resist films on the upper surface of a silicon substrate by a spin coating method, exposing the resist films for four times, and developing the resist to manufacture a mask with a composite curved surface structure, wherein a light source for manufacturing interference fringes in the step is a semiconductor laser with the wavelength of 405nm, the times of interference fringes are perpendicular to the second time of interference directions, interference included angles are 23.4 degrees, the third time of interference fringes are perpendicular to the fourth time of interference directions, interference included angles are 47.8 degrees, and the times of interference fringes are identical to the third time of interference directions.
By using the plasma etching method, the pattern on the resist mask is proportionally driven into the surface of the silicon substrate, and finally a compound curved surface structure like the mask is formed on the silicon surface.
And a passivation film is formed on the silicon light trapping structure to eliminate surface dangling bonds. The passivation film was a silicon nitride film formed by a vacuum sputtering method and had a thickness of 30 nm.
Finally, the structure is formed on a 1 μm crystalline silicon cell.
Fig. 2 and 3 show the spectral and angular spectral response of a cell with the compound curved surface structure compared with cells with other structures.
As can be seen from the attached figure 2, in the aspect of spectral response, the three structures have the light trapping function, the response cancellation of the pyramid structure and the cosine structure is similar, and the composite curved surface structure is superior to the pyramid structure and the single cosine structure, particularly in the 700-900 nm wave band and far beyond the other two structures, so that the near infrared absorption of the solar cell can be greatly enhanced. The absorption enhancement coefficients of these three structures are: 31.94 of compound curved surface, 11.70 of pyramid and 12.89 of single cosine.
As can be seen from the attached figure 3, in the aspect of an angular spectrum, the composite curved surface structure is obviously superior to other structures in the full angle, the short-circuit current density is better represented within 65 degrees of incidence, and the reduction rate along with the angle is less than 5 percent. Even if the incident angle reaches 80 degrees, the short-circuit current density of the composite curved surface structure can still keep 20mA/cm2In the above, the use of the solar light tracking system can be reduced, and the cost of solar power generation can be further reduced.
Claims (2)
1, A compound curved light trapping structure for improving efficiency of thin film silicon cell, the structure comprising:
an antireflection structure body having a periodic compound curved surface on the surface thereof; and a transparent passivation film formed on the compound curved surface;
except for the outermost curved surface, 3 groups of curved surfaces are arranged between each curved surface and the 8 same curved surfaces which are the closest to the curved surface, the three groups of curved surfaces are different from each other, wherein the two curved surfaces in the x direction are groups, the two curved surfaces in the y direction which are perpendicular to the x direction are groups, the 4 curved surfaces in the inclined direction are groups, and any two adjacent curved surfaces are smoothly connected with each other at the respective lowest points.
2. The light trapping structure of claim 1, wherein,
the light trapping structures are periodically arranged in a regular tetragonal lattice shape.
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| CN102074591A (en) * | 2010-12-02 | 2011-05-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Composite micro-nano photon structure for enhancing absorption efficiency of solar cell and manufacturing method thereof |
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| CN102074591A (en) * | 2010-12-02 | 2011-05-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Composite micro-nano photon structure for enhancing absorption efficiency of solar cell and manufacturing method thereof |
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