CN107256895B - A kind of production method of high-performance GaAs laser batteries - Google Patents
A kind of production method of high-performance GaAs laser batteries Download PDFInfo
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- CN107256895B CN107256895B CN201710369370.6A CN201710369370A CN107256895B CN 107256895 B CN107256895 B CN 107256895B CN 201710369370 A CN201710369370 A CN 201710369370A CN 107256895 B CN107256895 B CN 107256895B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 56
- 238000001259 photo etching Methods 0.000 claims abstract description 50
- 238000004544 sputter deposition Methods 0.000 claims abstract description 32
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005260 corrosion Methods 0.000 claims abstract description 28
- 230000007797 corrosion Effects 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 238000002604 ultrasonography Methods 0.000 claims abstract description 7
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 31
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 20
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 239000000908 ammonium hydroxide Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- BWKOZPVPARTQIV-UHFFFAOYSA-N azanium;hydron;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [NH4+].OC(=O)CC(O)(C(O)=O)CC([O-])=O BWKOZPVPARTQIV-UHFFFAOYSA-N 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 230000008719 thickening Effects 0.000 claims description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 239000011630 iodine Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- -1 tetramethyl hydrogen Chemical compound 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000011161 development Methods 0.000 abstract description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 54
- 239000010410 layer Substances 0.000 description 42
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of production methods of high-performance GaAs laser batteries, are included in Semi-insulating GaAs grown on substrates compound semiconductor GaAs material；Make P-type electrode, positive photoresist photoetching, development baking；Plasma cleaning, Ti/Pt/Au sputterings；Impregnate ultrasound stripping, annealing；Positive photoresist photoetching, development, baking；N-type groove corrosion is to N-type absorbed layer upper surface；AuGeNi alloys and Au sputterings are carried out using equal conditions N-type electrode；Acetone soak and ultrasonic positive photoresist are removed, short annealing；Make isolation channel, positive photoresist photoetching, development, baking；Groove corrosion is isolated to GaAs epitaxial wafer semi-insulating substrate layers upper surface, removes photoresist；Positive photoresist high concentration layer photoetching, development, baking；High concentration layer corrodes to finishing；SiO2Antireflective film deposits；Acetone soak and ultrasonic positive photoresist are removed；Au is sputtered；Positive photoresist photoetching, development, baking, corrosion；Chemical polishing is thinned, scribing, that is, completes the making of GaAs laser batteries.Electrode bulk resistor of the present invention is substantially reduced, and whole series resistance reduces, and cell output is high.
Description
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of compound-material GaAs (GaAs) High-performance lasers battery
Production method, the battery have remote control function, be mainly used for needing the place of laser power supply, in power grid measuring system
Photo-electricity mutual-inductor in.
Background technology
With the continuous development of modernized society of China, the electric power labour energy most basic as this society, in work
The demand of industry, agricultural and civilian aspect will be increasing.With being incremented by for electricity consumption, the increase of transmission line capability, power transmission line
The electric energy of road heating loss waste is more and more huger.Benefit of transmitting electricity is more and more important.To improve benefit, voltage class will be carried constantly
It is high.Up to the present, extra-high voltage 1000KV till now is improved via the just 10KV that founds the state.
Currently, the electric power mutual-inductor of the metering of China's electric power networks, monitoring and protection is mainly conventional electromagnetic mutual inductor,
There are many fatal problems and deficiencies.
1. measurement accuracy is not high, range is not wide.2. mutual inductors carry out high-voltage isulation using SF6 gases, have prodigious exhausted
Intermarginal gap so that fuselage is huge, installs a large amount of copper materials of inconvenience , Hao Charges.3. is insulated using SF6 gases, longtime running
Oxidizable and leakage, reduces insulation performance, needs to safeguard.The maintenance cost of insulation is much larger than design, manufacturing cost.4. electromagnetism
Formula mutual inductor uses SF6 gas-insulateds, and when 500KV, insulate awkward, 1500KV, and 2000KV is not with SF6 insulants
It is in the cards.
Had the advantages that using photoelectricity electric power mutual-inductor following irreplaceable：
Since optical fiber is excellent insulator, so thoroughly solving super-pressure Insulation Problems；Due to not applying electromagnetic induction
Principle, the shortcomings that avoiding traditional electromagnetic power mutual inductor；Due to not using greenhouse gases SF6, being maintenance-free green electricity
Device；
Photo-electricity mutual-inductor equipment composition is roughly divided into three parts：1. hot side signal acquisition process part, 2. ground potential
Side signal processing, 3. hot side power supply power supply part.
Power supply power supply part is one of core of system, due to the distally mounted high electricity of the sensing head of photo-electricity mutual-inductor
Position side, Bing You Unit piece machines；16 A/D converters；The electronic circuits such as communication laser are constituted.Therefore there must be power supply electron
Circuit is powered.It is that laser is irradiated to from low-pressure side on laser battery by optical fiber, converts out electric energy and supply on high-tension side sensing
Device.
Therefore making high performance GaAs batteries ensures that its stability and reliability become particularly significant problem.GaAs
Laser battery is newly established at home, complex manufacturing technology, so there are a little technical problems.Mainly have：
1. p-type metal electrode bulk resistor in series resistance, the big influence output power of N-type metal electrode bulk resistor.
2. p-type metal and semiconductor contact resistance in series resistance, N-type metal is exported with the big influence of semiconductor contact resistance
Power.
3. because sputtering substrate heating temperature is low, metal adhesion is weak, easy to fall off.Influence qualification rate and long-term reliability
4. there is N electrode cutting in processing procedure, it is electrically isolated cutting and etching high concentration layer 3 times is groove etched any work once is not achieved
Skill technology requires that entire technique can all be made to fail.
For these presently, there are the technical issues of, propose that a kind of production method of high-performance gallium arsenide laser battery becomes
This field technical problem urgently to be resolved hurrily at present.
Invention content
To solve drawbacks described above existing in the prior art, the object of the present invention is to provide a kind of high-performance GaAs (arsenic
Gallium) laser battery production method, solve problems of the prior art, it is GaAs (GaAs) laser battery of making, short
Road electric current is big, open-circuit voltage is high, output power, good operating stability, and long-term reliability is high.
The present invention is realized by following technical proposals.
A kind of production method of high-performance GaAs laser batteries, this method include the following steps：
Step S1 uses MBE molecular beam epitaxial method growth compounds on Semi-insulating GaAs substrate by design level structure
Semiconductor GaAs material epitaxy piece；
Step S2 makes P-type electrode, using positive photoresist photoetching on the epitaxial wafer that growth has compound semiconductor GaAs material
Technique carries out photoetching, and uses hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing；
Step S3, by the GaAs epitaxial wafers after photoetching in sputtering unit, under high-purity Ar gas atmosphere, plasma cleaning,
Ti/Pt/Au sputterings are carried out to P-type electrode using four targets or three target magnetic control sputtering machines；
Step S4, the GaAs epitaxial wafers after being sputtered using acetone soak, then use ultrasonic wave to the GaAs epitaxial wafers into
Row ultrasound positive photoresist stripping；
Step S5 carries out short annealing at a certain temperature under high nitrogen atmosphere；
Step S6 makes N-type electrode on making the GaAs epitaxial wafers for having P-type electrode, is carried out using positive photoresist photoetching process
Photoetching, and use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing；
Step S7 carries out N-type groove corrosion to the GaAs epitaxial wafers after photoetching under 780-820nm/min corrosion rates, rotten
Depth is lost to N-type absorbed layer upper surface；
Step S8, using with step S3 equal conditions progress plasma cleaning and using four targets or three target magnetic control sputtering machines pair
N-type electrode carries out AuGeNi alloys and Au sputterings；
Step S9 carries out acetone soak and ultrasonic positive photoresist using with step S4 the same terms to the GaAs epitaxial wafers after sputtering
Stripping；
Step S10 carries out short annealing to N-type electrode at a certain temperature under high nitrogen atmosphere；
Step S11 makes isolation channel on making the GaAs epitaxial wafers for having N-type electrode, is carried out using positive photoresist photoetching process
Photoetching, and use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing；
Step S12 carries out the GaAs epitaxial wafers after photoetching isolation channel corruption under 1376-1400nm/min corrosion rates
Erosion, corrosion depth are removed photoresist to GaAs epitaxial wafer semi-insulating substrate layers upper surface；
Step S13 carries out high concentration layer photoetching to GaAs epitaxial wafers upper surface using positive photoresist photoetching process, and uses tetramethyl
Hot plate high-temperature baking is used after base ammonium hydroxide developing liquid developing；
Step S14 carries out high concentration layer to GaAs epitaxial wafers upper surface using positive photoresist photoetching process and corrodes to finishing；
Step S15 carries out SiO using PECVD2Antireflective film deposits；
Then step S16, the GaAs epitaxial wafers after being sputtered using acetone soak carry out ultrasonic positive photoresist stripping；
Step S17 carries out Au sputterings using four targets or three target magnetic control sputtering machines, and Au layer thickness is 1.2 μm -2.5 μm；
Step S18 carries out photoetching using positive photoresist photoetching process on thickening the epitaxial wafer for having Au, and uses tetramethyl hydrogen-oxygen
Hot plate high-temperature baking is used after changing ammonium developing liquid developing；
Step S19 corrodes the GaAs epitaxial wafers after photoetching；
Step S20 uses surface with chemical polishing technology be thinned to thickness to GaAs epitaxial wafers as 120 μm -160 μm, then draws
Piece completes the making of GaAs laser batteries.
Further, in the step S3, under high-purity Ar gas atmosphere, use power for 90-110W, with 80ml/min flows
Carry out 2-4min plasma cleanings；Power is used to be bombarded GaAs epitaxial wafers for 50-90W under same Ar gas atmosphere；
Rate is to be sputtered under 5.0-7.5nm/min.
Further, in the step S4, the acetone soak GaAs epitaxial wafer times are 30-50min, and ultrasound stripping power is
50W, ultrasonic time 10-20s.
Further, in the step S5, short annealing 60-70s is carried out at 390-410 DEG C of temperature.
Further, in the step S7, corrosive liquid uses the raw material of following volume ratios：
Ammonium hydroxide：H2O2：H2O=1:(1-1.5)：(7-9).
Further, in the step S10, short annealing 60-70s is carried out at 470-490 DEG C of temperature.
Further, in the step S12, corrosive liquid uses the raw material of following volume ratios：
Ammonium hydroxide：H2O2：H2O=1:1:(2.8-3.6).
Further, in the step S14, corrosive liquid uses the raw material of following mass ratioes：
Citric acid ammonia water mixture：H2O2=1：(3-5)；
Citric acid ammonia water mixture is citric acid：H2O：Ammonium hydroxide=3：200：3.5.
Further, in the step S15, SiO is deposited2Refractive index be 1.44-1.48, deposit SiO2Thickness be 125-
135nm。
Further, in the step S19, corrosive liquid uses the raw material of following mass ratioes：
Iodine：Potassium iodide：Water=1：(3-5):(7-9).
The method have the characteristics that：
Due to taking above-mentioned technical proposal, can only be fabricated by solving the problems, such as that positive photoresist is removed by 0.2 μm, and now be fabricated into 1 μ
M or more.P-type electrode and N-type electrode all thicken, and p-type metal electrode bulk resistor and N-type metal electrode bulk resistor reduce.Battery
Output power small-power driving under, have 6% raising, under middle power drive, the output power of battery has 11% raising,
Under high-power driving, the output power of battery has 17% raising.
Description of the drawings
Fig. 1 is high-performance GaAs (GaAs) laser battery production method flow diagram of the present invention；
Fig. 2 is N-type groove corrosion diagrammatic cross-section；
Fig. 3 is isolation channel erosion profile schematic diagram；
Fig. 4 is high concentration layer erosion profile schematic diagram；
Fig. 5 (a) is that former P, N thicken thickness of electrode diagrammatic cross-section；
Fig. 5 (b) is that existing P, N thicken thickness of electrode diagrammatic cross-section.
In figure：1, high concentration layer；2, Window layer；3, P absorbed layers；4, N absorbed layers；5, cutoff layer；6, buffer layer；7, half absolutely
Edge substrate；8, original P thickeies electrode；9, original N thickeies electrode；10, existing P thickeies electrode；11, existing N thickeies electrode.
Specific implementation mode
The invention will be described in further detail with reference to the accompanying drawings and examples, but is not intended as doing any limit to invention
The foundation of system.
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The method and step of the present invention is illustrated in conjunction with the flow chart of Fig. 1：
Step S1, on Semi-insulating GaAs substrate, by design level structure MBE (molecular beam epitaxy) method growth compound
Semiconductor GaAs material epitaxy piece.
Step S2 makes P-type electrode, using positive photoresist photoetching on the epitaxial wafer that growth has compound semiconductor GaAs material
Technique carries out photoetching, and positive photoresist uses hot plate 85-100 using Soviet Union thirty auspicious red 304 after using tetramethylammonium hydroxide developing liquid developing
DEG C high-temperature baking.
It is easy to remove, it should be noted that：1. film thickness is usually 5-10 times of metal layer thickness；2. high temperature dries after development
Roasting hot plate not use baking oven, and T=90-100 DEG C, t=5-10min, the shorter the temperature lower time the better；3. developer solution does not have to
KOH (reduces electric leakage caused by potassium ion stains), uses tetramethylammonium hydroxide.
Step S3, by the GaAs epitaxial wafers after photoetching in sputtering unit, under high-purity Ar gas atmosphere, Ar gas purity is
99.999%, it uses power for 90-110W, 2-4min plasma cleanings is carried out with 80ml/min rates；In same Ar gas atmosphere
It is lower to use four targets or three target magnetic control sputtering machines, it is that 50-90W bombards GaAs epitaxial wafers in power；It is 5.0- in rate
It is sputtered under 7.5nm/min.
Then step S4, the GaAs epitaxial wafers after being sputtered using acetone soak, soaking time 30-50min use ultrasound
Wave power is 50W, ultrasonic time 10-20S, to the GaAs epitaxial wafers carry out ultrasound positive photoresist Stripping from.
The positive photoresist stripper acetone or import positive photoresist stripper of positive photoresist stripping.
Step S5 carries out short annealing 60S-70S under high nitrogen atmosphere at a temperature of 390-410 DEG C.
Step S6 makes N-type electrode on making the GaAs epitaxial wafers for having P-type electrode, is carried out using positive photoresist photoetching process
Photoetching, positive photoresist Soviet Union thirty auspicious red 304, and use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing.
Step S7 carries out N-type groove corrosion to the GaAs epitaxial wafers after photoetching under 780-820nm/min corrosion rates, rotten
Erosion depth to N-type electrode absorbed layer upper surface is followed successively by figure from top to bottom as shown in Figure 2, high concentration layer 1, Window layer 2, P
Absorbed layer 3, N absorbed layers 4, cutoff layer 5, buffer layer 6, semi-insulating substrate 7.
Corrosive liquid uses the raw material of following volume ratios：
Ammonium hydroxide：H2O2：H2O=1:(1-1.5)：(7-9).
The step is one of emphasis of the present invention, it is desirable that accurate corrosion is corroded less than on the absorbed layer of the poles N, N electrode can not drawn
Come, N absorbed layers were corroded in technique failure, and battery is poor to the assimilation effect of light, and technique failure is suitable using above-mentioned corrosion rate
Proportioning, can accurately corrode.
Step S8, using with step S3 equal conditions progress plasma cleaning and using four targets or three target magnetic control sputtering machines pair
N-type electrode carries out AuGeNi alloys and Au sputterings.
Step S9 carries out immersion and ultrasonic positive photoresist stripping using with step S4 the same terms to the GaAs epitaxial wafers after sputtering
From；
Step S10 carries out short annealing 60S-70S, cooling under high nitrogen atmosphere at 470 DEG C -490 DEG C of temperature
To 50 DEG C of slices
Step S11 makes isolation channel on making the GaAs epitaxial wafers for having N-type electrode, is carried out using positive photoresist photoetching process
Photoetching, as shown in Figure 3, positive photoresist Soviet Union thirty auspicious red 304, and dried with hot plate high temperature using after tetramethylammonium hydroxide developing liquid developing
It is roasting.
Step S12 carries out N-type groove corrosion to the GaAs epitaxial wafers after photoetching under 1376-1400nm/min corrosion rates,
Corrosion depth is removed photoresist to GaAs epitaxial wafer semi-insulating substrate layers upper surface.
Corrosive liquid uses the raw material of following volume ratios：
Ammonium hydroxide：H2O2：H2O=1:1:(2.8-3.6).
The step is one of emphasis of the present invention, it is desirable that accurate corrosion, less than on semi-insulating layer, electric isolution is unable to shape for corrosion
At open-circuit voltage can only accomplish the forward voltage of a monomer, and technique failure, corrosion is too deep, and isolation channel is very wide very deep, surface leakage
Electricity increases, and influences cell output.To the proportioning of corrosive liquid, Longitude, which crosses many experiments, has corrosion rate suitably to match, energy
Accurate corrosion.
Step S13 carries out high concentration layer photoetching using positive photoresist photoetching process to GaAs epitaxial wafers upper surface, as shown in Figure 4,
Positive photoresist Soviet Union thirty auspicious red 304, and use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing.
Step S14 carries out high concentration layer to GaAs epitaxial wafers upper surface using positive photoresist photoetching process and corrodes to finishing.Corrosion
Liquid uses the raw material of following mass ratioes：
Citric acid ammonia water mixture：H2O2=1：(3-5)；
Citric acid ammonia water mixture is citric acid：H2O：Ammonium hydroxide=3：200：3.5.
High concentration layer is carried out using above-mentioned corrosive liquid and corrodes high selectivity 30：1 or more, high concentration layer 300nm, Window layer
300nm, since it is very thin, it is desirable that accurate corrosion, selection is more easy to operate than high technology, and corrosion precision easily ensures.That is GaAs epitaxial wafers
Upper surface high concentration layer corrodes 50nm, AlxGa1-xAs Window layers only corrode 1nm.If high concentration layer corrodes endless, photoproduction can be absorbed
Carrier reduces outer quantum effect 30%-40%, reduces the output power 25%-35% of battery.
Step S15 carries out SiO using PECVD2Antireflective film deposits；Deposit SiO2Refractive index be 1.44-1.48, deposit
SiO2Thickness be 125-135nm.
Then step S16, the GaAs epitaxial wafers after being sputtered using acetone soak use ultrasonic wave to carry out ultrasound to antireflective film
Positive photoresist is removed, and positive photoresist stripper uses acetone or import positive photoresist stripper.
Step S17 carries out Au sputterings using four targets or three target magnetic control sputtering machines, and Au layer thickness is 1.2 μm -2.5 μm.
Step S18, photoetching is carried out on thickening the epitaxial wafer for having Au using positive photoresist photoetching process, and positive photoresist is auspicious red with Soviet Union thirty
304, and use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing.
Step S19 corrodes the GaAs epitaxial wafers after photoetching；Corrosive liquid uses the raw material of following mass ratioes：
Iodine：Potassium iodide：Water=1：(3-5):(7-9).
The step is also one of the emphasis of the present invention, is only made with the metal thickness of positive photoresist stripping technology P, N electrode are most thick
To 0.2 μm.The present invention uses positive photoresist etching process method, can the metal thickness of P, N electrode be accomplished 1.2 μ with iodine system corrosive liquid
M-2.5 μm, see shown in Fig. 5 (b), in figure：10 thicken electrode 10,11 for existing P thickeies electrode for existing N.
Thickness of electrode (see shown in Fig. 5 (a), 8 thicken electrode for original P, and 9 thicken electrode for original N) is thickeied relative to former P, N,
The high-performance GaAs laser batteries that the present invention makes greatly improve the performance of battery.
Step S20 uses surface with chemical polishing technology be thinned to thickness to GaAs epitaxial wafers as 120 μm -160 μm, then draws
Piece completes the making of GaAs laser batteries.
Advantage of the invention is that：
Series resistance is to influence one of most important factor of battery performance, when several element cells are connected, series resistance pair
The influence of battery performance is even more serious.Series resistance consists of the following parts：P-type metal electrode bulk resistor；P-type metal with partly lead
Body contact resistance；The sheet resistance of epitaxial layer；N-type metal electrode bulk resistor；N-type metal and semiconductor contact resistance.Wherein p-type
Metal electrode bulk resistor and N-type metal electrode bulk resistor are one of chief components of series resistance.Resistance and length
It is directly proportional to be inversely proportional with sectional area.
The metal sputtering three times of the present invention, in order to which positive photoresist stripping is unaffected, substrate heating temperature is relatively low, after thickening electrode
No longer alloy, so metal is big with semiconductor contact resistance, and metal is easy to fall off when positive photoresist stripping and routing.
The present invention sputters in P-type electrode, N-type electrode sputtering and when thickening electrode sputtering, using carried out etc. before 1. sputtering from
Son cleaning, power 100W, high-purity Ar 5N, 80ml/min, 2-3min.Journey Ar bombardment 100W are had suffered 2. sputtering, Ar gas 99.999%,
100ml/min.Contact of the metal with semiconductor is improved, p-type N-type metal and semiconductor contact resistance are significantly reduced, is improved
The output power of battery.
Positive photoresist stripping technology metal layer thickness only accomplishes 0.2 μm, positive photoresist etching process method of the invention, and repeatedly real
The best corrosive liquid proportioning tested may be implemented to thicken the thick metal layers technique of electrode, and metal layer thickness generally can reach positive photoresist stripping
8 times or more of process.Electrode metal thickeies, and P-type electrode bulk resistor and N-type electrode bulk resistor have significant reduction, to
It plays a role to the reduction of whole series resistance, improves the output power of battery.
This laser battery is that open-circuit is accomplished 6V, is first electrically isolated and then is connected.
The Window layer of this laser battery, N absorbed layers, semi-insulating layer not on the surface layer of epitaxial wafer and in the inside of epitaxial wafer,
They, which are drawn, must etch on corresponding layer.
Table 2 is that the example product of the present invention and the technical indicator of home products compare.
Table 2 is compared with home products：
Compared with home products, in technical indicator, quality, reliability, present example is superior to domestic similar product.
Example and test result
Due to taking foregoing invention technical solution, the performance of battery, which has, to be substantially improved, the small work(of output power of battery
Under rate driving, there is 6% raising, under middle power drive, the output power of battery has 11% raising, in high-power driving
Under, the output power of battery has 17% raising.
The invention is not limited in above-described embodiments, on the basis of technical solution disclosed by the invention, the skill of this field
For art personnel according to disclosed technology contents, one can be made to some of which technical characteristic by not needing performing creative labour
A little to replace and deform, these are replaced and deformation is within the scope of the invention.
Claims (10)
1. a kind of production method of high-performance GaAs laser batteries, which is characterized in that this method includes the following steps：
Step S1 is partly led by design level structure using MBE molecular beam epitaxial methods growth compound on Semi-insulating GaAs substrate
Body GaAs material epitaxy pieces；
Step S2 makes P-type electrode, using positive photoresist photoetching process on the epitaxial wafer that growth has compound semiconductor GaAs material
Photoetching is carried out, and hot plate high-temperature baking is used after using tetramethylammonium hydroxide developing liquid developing；
Step S3, by the GaAs epitaxial wafers after photoetching in sputtering unit, under high-purity Ar gas atmosphere, plasma cleaning uses
Four targets or three target magnetic control sputtering machines carry out Ti/Pt/Au sputterings to P-type electrode；
Then step S4, the GaAs epitaxial wafers after being sputtered using acetone soak surpass the GaAs epitaxial wafers using ultrasonic wave
Sound positive photoresist is removed；
Step S5 carries out short annealing at a certain temperature under high nitrogen atmosphere；
Step S6 makes N-type electrode on making the GaAs epitaxial wafers for having P-type electrode, and photoetching is carried out using positive photoresist photoetching process,
And use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing；
Step S7 carries out N-type groove corrosion to the GaAs epitaxial wafers after photoetching under 780-820nm/min corrosion rates, and corrosion is deep
It spends to N-type absorbed layer upper surface；
Step S8 carries out plasma cleaning and using four targets or three target magnetic control sputtering machines to N-type using with step S3 equal conditions
Electrode carries out AuGeNi alloys and Au sputterings；
Step S9 carries out acetone soak and ultrasonic positive photoresist stripping using with step S4 the same terms to the GaAs epitaxial wafers after sputtering
From；
Step S10 carries out short annealing to N-type electrode at a certain temperature under high nitrogen atmosphere；
Step S11 makes isolation channel on making the GaAs epitaxial wafers for having N-type electrode, and photoetching is carried out using positive photoresist photoetching process,
And use hot plate high-temperature baking after using tetramethylammonium hydroxide developing liquid developing；
Step S12 carries out isolation groove corrosion to the GaAs epitaxial wafers after photoetching under 1376-1400nm/min corrosion rates, rotten
Depth is lost to GaAs epitaxial wafer semi-insulating substrate layers upper surface, is removed photoresist；
Step S13 carries out high concentration layer photoetching to GaAs epitaxial wafers upper surface using positive photoresist photoetching process, and uses tetramethyl hydrogen
Hot plate high-temperature baking is used after amine-oxides developing liquid developing；
Step S14 carries out high concentration layer to GaAs epitaxial wafers upper surface using positive photoresist photoetching process and corrodes to finishing；
Step S15 carries out SiO using PECVD2Antireflective film deposits；
Then step S16, the GaAs epitaxial wafers after being sputtered using acetone soak carry out ultrasonic positive photoresist stripping；
Step S17 carries out Au sputterings using four targets or three target magnetic control sputtering machines, and Au layer thickness is 1.2 μm -2.5 μm；
Step S18 carries out photoetching using positive photoresist photoetching process on thickening the epitaxial wafer for having Au, and uses tetramethylammonium hydroxide
Hot plate high-temperature baking is used after developing liquid developing；
Step S19 corrodes the GaAs epitaxial wafers after photoetching；
Step S20 uses surface with chemical polishing technology be thinned to thickness for 120 μm -160 μm, then scribing, i.e., to GaAs epitaxial wafers
Complete the making of GaAs laser batteries.
2. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S3
In, it under high-purity Ar gas atmosphere, uses power for 90-110W, 2-4min plasma cleanings is carried out with 80ml/min flows；Same
Power is used to be bombarded GaAs epitaxial wafers for 50-90W under equal Ar gas atmosphere；It is carried out in the case where rate is 5.0-7.5nm/min
Sputtering.
3. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S4
In, the acetone soak GaAs epitaxial wafer times are 30-50min, and ultrasound stripping power is 50W, ultrasonic time 10-20s.
4. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S5
In, short annealing 60-70s is carried out at 390-410 DEG C of temperature.
5. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S7
In, corrosive liquid uses the raw material of following volume ratios：
Ammonium hydroxide：H2O2：H2O=1:(1-1.5)：(7-9).
6. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S10
In, short annealing 60-70s is carried out at 470-490 DEG C of temperature.
7. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S12
In, corrosive liquid uses the raw material of following volume ratios：
Ammonium hydroxide：H2O2：H2O=1:1:(2.8-3.6).
8. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S14
In, corrosive liquid uses the raw material of following mass ratioes：
Citric acid ammonia water mixture：H2O2=1：(3-5)；
Citric acid ammonia water mixture is citric acid：H2O：Ammonium hydroxide=3：200：3.5.
9. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S15
In, deposit SiO2Refractive index be 1.44-1.48, deposit SiO2Thickness be 125-135nm.
10. the production method of high-performance GaAs laser batteries according to claim 1, which is characterized in that the step S19
In, corrosive liquid uses the raw material of following mass ratioes：
Iodine：Potassium iodide：Water=1：(3-5):(7-9).
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| CN112011340A (en) * | 2020-08-04 | 2020-12-01 | 中国电子科技集团公司第十一研究所 | Corrosive liquid and corrosion method for corroding zinc sulfide ZnS film on mercury cadmium telluride surface |
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| CN105161531A (en) * | 2015-08-26 | 2015-12-16 | 西安电子科技大学 | 4h-sic metal semiconductor field effect transistor and manufacturing method thereof |
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| CN105161531A (en) * | 2015-08-26 | 2015-12-16 | 西安电子科技大学 | 4h-sic metal semiconductor field effect transistor and manufacturing method thereof |
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