CN102881785A - Light-emitting diode chip and manufacturing method thereof - Google Patents

Light-emitting diode chip and manufacturing method thereof Download PDF

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Publication number
CN102881785A
CN102881785A CN2012103585624A CN201210358562A CN102881785A CN 102881785 A CN102881785 A CN 102881785A CN 2012103585624 A CN2012103585624 A CN 2012103585624A CN 201210358562 A CN201210358562 A CN 201210358562A CN 102881785 A CN102881785 A CN 102881785A
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layer
type
shaped
pad
chip
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吴继清
张建宝
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HC Semitek Corp
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HC Semitek Corp
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Abstract

The invention discloses a light-emitting diode chip and a manufacturing method thereof, which belongs to the technical field of semiconductors. The chip includes a substrate as well as an n-type layer, an MQWs (Multiple Quantum Wells) layer and a p-type layer which are sequentially stacked on the substrate, wherein a groove which is etched from the n-type layer to the n-type layer is formed on the chip; an n-type pad is arranged on the n-type layer in the groove; a p-type pad is arranged on the p-type layer; passivation layers are arranged on the p-type layer and the n-type layer in the groove; and each passivation layer includes a first layer and a second layer which are sequentially stacked on the p-type layer and the n-type layer in the groove, wherein the first layer is a Al2O3 layer and the second layer is a SiO2 layer and a SiNx layer or a SiONx layer. By adopting the technical scheme, excellent moisture-proof and anti-contamination capability of the chip are ensured, the light extraction efficiency is increased, and the Al2O3 layer can effectively reduce the surface defect density after the n-type layer in the groove is etched, thereby reducing the electric leakage.

Description

A kind of light-emitting diode chip for backlight unit and preparation method thereof
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technology
Light-emitting diode is a kind of semiconductor solid luminescence device, and it can be luminous energy with electric energy conversion directly, and can make its light that sends different colours by regulating crystal structure, compares with conventional light source that it is with the obvious advantage.At present, light-emitting diode has been widely used in the fields such as display screen, backlight, illumination, car light.Light-emitting diode chip for backlight unit is semiconductor wafer, is the core component of light-emitting diode.
Light-emitting diode chip for backlight unit comprises substrate and epitaxial loayer, epitaxial loayer comprises N-shaped layer, the MQWs(Multiple Quantum Wells that is grown in successively on the substrate, Multiple Quantum Well) layer and p-type layer, epitaxial loayer is provided with the groove that etches into the N-shaped layer from the p-type layer, N-shaped layer in the groove is provided with the N-shaped pad, and the p-type layer is provided with the p-type pad.Because epitaxial wafer can form a large amount of defectives after etching, these defectives can cause the generation of leakage current, in order to reduce leakage current, generally can be provided with passivation layer by the N-shaped layer in p-type layer and groove.
In realizing process of the present invention, the inventor finds that there is following problem at least in prior art:
Existing passivation layer is generally the SiO of individual layer 2Layer or the Al of individual layer 2O 3Layer; As the SiO that is individual layer 2During layer, because SiO 2Structure is comparatively loose, and moistureproof anti-contamination ability is relatively poor, and chip can leak electricity in use, the less stable of chip; As the Al that is individual layer 2O 3During layer, because Al 2O 3The bright dipping critical angle smaller, reduced the luminous efficiency of chip.
Summary of the invention
In order to solve the problem of prior art, the embodiment of the invention provides a kind of light-emitting diode chip for backlight unit and preparation method thereof.Described technical scheme is as follows:
On the one hand, the embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, and described chip comprises:
Substrate and stack gradually N-shaped layer, multiple quantum well layer and p-type layer on described substrate, described chip is provided with the groove that etches into described N-shaped layer from described p-type layer, described N-shaped layer in the described groove is provided with the N-shaped pad, described p-type layer is provided with the p-type pad, N-shaped layer in described p-type layer and the described groove is provided with passivation layer, described N-shaped pad and described p-type pad pass described passivation layer, wherein, described passivation layer comprises ground floor and the second layer on the N-shaped layer that stacks gradually in described p-type layer and described groove, wherein, described ground floor is Al 2O 3Layer, the described second layer is SiO 2Layer, SiN xLayer or SiON xLayer.
Preferably, also be provided with described nano indium tin metal oxide current-diffusion layer between described p-type layer and the described ground floor.
Preferably, the thickness of described ground floor is 5-10nm.
Preferably, the thickness of the described second layer is 50-100nm.
Preferably, described N-shaped pad and described p-type pad are made by Cr/Pt/Au.
On the other hand, the embodiment of the invention also provides a kind of manufacture method of light-emitting diode chip for backlight unit, and described method comprises:
Stack gradually growing n-type layer, multiple quantum well layer and p-type layer at substrate;
Etch away the described p-type layer of part and described multiple quantum well layer, so that the described N-shaped layer of part is exposed out;
Form the N-shaped pad at exposed described N-shaped layer out, form the p-type pad at described p-type layer;
Growth of passivation layer on described p-type layer and exposed out described N-shaped layer;
Wherein, described on described p-type layer and exposed out described N-shaped layer the growth of passivation layer comprise:
Stack gradually growth regulation one deck and the second layer at described p-type layer and exposed described N-shaped layer out, wherein, described ground floor is Al 2O 3Layer, the described second layer is SiO 2Layer, SiN xLayer or SiON xLayer.
Preferably, form the N-shaped pad at described exposed described N-shaped layer out, before described p-type layer formed the p-type pad, described method also comprised:
Depositing nano indium tin metal oxide current diffusion layer on described p-type layer;
Then, described at described p-type layer with exposed out described N-shaped layer stacks gradually growth regulation one deck and the second layer specifically comprises:
Stack gradually the described ground floor of growth and the described second layer at described nano indium tin metal oxide current-diffusion layer and exposed described N-shaped layer out.
Preferably, the thickness of described ground floor is 5-10nm.
Preferably, the thickness of the described second layer is 50-100nm.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: be set to the composite bed that ground floor and the second layer form by passivation layer, and ground floor is Al 2O 3Layer, so that the moistureproof anti-contamination ability of chip is good, and Al 2O 3Layer can effectively reduce the surface defect density after the interior N-shaped layer etching of groove, thereby has reduced leakage current, has improved the stability of chip; And the second layer and ground floor form the composite bed that refractive index is successively decreased, so that this chip obtains larger bright dipping critical angle, have increased the light extraction efficiency of chip.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of a kind of light-emitting diode chip for backlight unit of providing of the embodiment of the invention one;
Fig. 2 is the structural representation of a kind of light-emitting diode chip for backlight unit of providing of the embodiment of the invention two.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Embodiment one
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, and referring to Fig. 1, this chip comprises:
Substrate 11 and stack gradually N-shaped layer 12, multiple quantum well layer 13 and p-type layer 14 on substrate 11, chip is provided with the groove 15 that etches into N-shaped layer 12 from p-type layer 4, N-shaped layer 12 in the groove 15 is provided with N-shaped pad 121, p-type layer 14 is provided with p-type pad 141, N-shaped layer 12 in p-type layer 14 and the groove 15 is provided with passivation layer 16, N-shaped pad 121 and p-type pad 141 pass passivation layer 16, this passivation layer 16 comprises ground floor 161 and the second layer 162 on the N-shaped layer 12 that stacks gradually in p-type layer 14 and groove 15, wherein, ground floor 161 is Al 2O 3Layer, the second layer 162 is SiO 2Layer, SiN xLayer or SiON xLayer.
Through the light-emitting diode chip for backlight unit test, under identical condition, the embodiment of the invention provides the more traditional light-emitting diode chip for backlight unit of the leakage current of light-emitting diode chip for backlight unit can reduce by 90%, and the more traditional light-emitting diode chip for backlight unit of its light extraction efficiency can improve 5-8%.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: be set to the composite bed that ground floor and the second layer form by passivation layer, and ground floor is Al 2O 3Layer, so that the moistureproof anti-contamination ability of chip is good, and Al 2O 3Layer can effectively reduce the surface defect density after the interior N-shaped layer etching of groove, thereby has reduced leakage current, has improved the stability of chip; And the second layer and ground floor form the composite bed that refractive index is successively decreased, so that this chip obtains larger bright dipping critical angle, have increased the light extraction efficiency of chip.
Embodiment two
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, and referring to Fig. 2, this chip comprises:
Substrate 21 and stack gradually N-shaped layer 22, multiple quantum well layer 23 and p-type layer 24 on substrate 21, chip is provided with the groove 25 that etches into N-shaped layer 22 from p-type layer 24, N-shaped layer 22 in the groove 25 is provided with N-shaped pad 221, p-type layer 24 is provided with p-type pad 241, N-shaped layer 22 in p-type layer 24 and the groove 25 is provided with passivation layer 26, and N-shaped pad 221 and p-type pad 241 pass passivation layer 26, and this passivation layer 26 comprises ground floor 261 and the second layer 262 that stacks gradually, wherein, ground floor 261 is Al 2O 3Layer, the second layer 262 is SiO 2Layer, SiN xLayer or SiON xLayer.
Particularly, this substrate 21 can be Sapphire Substrate.
Particularly, the second layer 262 forms the composite bed that refractive index is successively decreased with ground floor 261, so that chip has obtained larger bright dipping critical angle, has increased the light extraction efficiency of chip.
Preferably, also be provided with ITO(Indium Tin Oxides, nano indium tin metal oxide between p-type layer 24 and the ground floor 261) current-diffusion layer 27.By ITO current-diffusion layer 27 is set, so that second form the composite bed that refractive indexes are successively decreased with ITO current-diffusion layer 27, ground floor 261, further increased the bright dipping critical angle, obtained larger light emission rate.And by ITO current-diffusion layer 27 is set, so that p-type pad 241 forms good ohmic contact with p-type layer 24.
Preferably, the thickness of ground floor 261 is 5-10nm.
Preferably, the thickness of the second layer 262 is 50-100nm.Because ground floor 261 is different with the thickness of the second layer 262, its refractive index is also different with transmitance, and the thickness of ground floor 261 and the second layer 262 is made as respectively 5-10nm, 50-100nm, can improve the light extraction efficiency of chip.
Preferably, N-shaped pad 221 and p-type pad 241 are made by Cr/Pt/Au.
Through the light-emitting diode chip for backlight unit test, under identical condition, the embodiment of the invention provides the more traditional light-emitting diode chip for backlight unit of the leakage current of light-emitting diode chip for backlight unit can reduce by 90%, and the more traditional light-emitting diode chip for backlight unit of its light extraction efficiency can improve 5-8%.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: be set to the composite bed that ground floor and the second layer form by passivation layer, and ground floor is Al 2O 3Layer, so that the moistureproof anti-contamination ability of chip is good, and Al 2O 3Layer can effectively reduce the surface defect density after the interior N-shaped layer etching of groove, thereby has reduced leakage current, has improved the stability of chip; And the second layer and ITO current-diffusion layer, ground floor form the composite bed that refractive index is successively decreased, so that this chip has obtained larger bright dipping critical angle, have increased the light extraction efficiency of chip.
Embodiment three
The embodiment of the invention provides a kind of manufacture method of light-emitting diode chip for backlight unit, and the method comprises:
Step 101: stack gradually growing n-type layer, multiple quantum well layer and p-type layer at substrate.
Particularly, can adopt the metallo-organic compound chemical vapour deposition technique to stack gradually growing n-type layer, multiple quantum well layer and p-type layer at substrate.
Step 102: etch away part p-type layer and multiple quantum well layer, so that part N-shaped layer is exposed out.
Usually, can utilize dry etching to etch away part p-type layer and multiple quantum well layer, so that part N-shaped layer is exposed out.
Step 103: form the N-shaped pad at exposed N-shaped layer out, form the p-type pad at the p-type layer.
Particularly, can use apparatus for electron beam evaporation evaporating n type pad and p-type pad, N-shaped pad and p-type pad are made by Cr/Pt/Au, then chip are carried out annealing in process under 300 ℃ temperature.
Step 104: growth of passivation layer on p-type layer and exposed out N-shaped layer.
Wherein, step 104 comprises:
Stack gradually growth regulation one deck and the second layer at p-type layer and exposed N-shaped layer out, ground floor is Al 2O 3Layer, the second layer is SiO 2Layer, SiN xLayer or SiON xLayer.
Particularly, can adopt the metallo-organic compound chemical vapour deposition technique to stack gradually growth Al at p-type layer and exposed N-shaped layer out 2O 3Layer and SiO 2Layer (or SiN xLayer or SiON xLayer).Then use photo etched mask technology and lithographic technique to etch away the Al of N-type pad and P type bond pad surface 2O 3Layer and SiO 2Layer (or SiN xLayer or SiON xLayer), obtain required light-emitting diode chip for backlight unit.
Preferably, form the N-shaped pad at exposed N-shaped layer out, before the p-type layer formed the p-type pad, the method also comprised:
At p-type layer deposition ITO current-diffusion layer;
Then, step 104 specifically comprises:
Stack gradually growth regulation one deck and the second layer at ITO current-diffusion layer and exposed N-shaped layer out.
Usually, can adopt magnetic control sputtering device at the surface deposition one lamination ITO current-diffusion layer of p-type layer with exposed N-shaped layer out, the ITO current-diffusion layer on the surface of the N-shaped layer that then will expose out with photoetching and lithographic technique erodes, then adopt the metallo-organic compound chemical vapour deposition technique, stack gradually growth Al at ITO current-diffusion layer and exposed N-shaped layer out 2O 3Layer and SiO 2Layer (or SiN xLayer or SiON xLayer).By the ITO current-diffusion layer is set, so that SiO 2Layer (or SiN xLayer or SiON xLayer) with ITO current-diffusion layer, Al 2O 3Layer forms the composite bed that refractive index is successively decreased, and has further increased the bright dipping critical angle, has obtained larger light emission rate.And by the ITO current-diffusion layer is set, so that p-type pad and p-type layer form good ohmic contact.
Preferably, the thickness of ground floor is 5-10nm.
Preferably, the thickness of the second layer is 50-100nm.Because the thickness of ground floor and the second layer is different, its refractive index is also different with transmitance, and the thickness of ground floor and the second layer is made as respectively 5-10nm, 50-100nm, can improve the light extraction efficiency of chip.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: be set to the composite bed that ground floor and the second layer form by passivation layer, and ground floor is Al 2O 3Layer, so that the moistureproof anti-contamination ability of chip is good, and Al 2O 3Layer can effectively reduce the surface defect density after the interior N-shaped layer etching of groove, thereby has reduced leakage current, has improved the stability of chip; And the second layer and ITO current-diffusion layer, ground floor form the composite bed that refractive index is successively decreased, so that this chip has obtained larger bright dipping critical angle, have increased the light extraction efficiency of chip.
The invention described above embodiment sequence number does not represent the quality of embodiment just to description.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (9)

1. light-emitting diode chip for backlight unit, described chip comprises substrate and stacks gradually N-shaped layer on described substrate, multiple quantum well layer and p-type layer, described chip is provided with the groove that etches into described N-shaped layer from described p-type layer, described N-shaped layer in the described groove is provided with the N-shaped pad, described p-type layer is provided with the p-type pad, N-shaped layer in described p-type layer and the described groove is provided with passivation layer, described N-shaped pad and described p-type pad pass described passivation layer, it is characterized in that, described passivation layer comprises ground floor and the second layer on the N-shaped layer that stacks gradually in described p-type layer and described groove, wherein, described ground floor is Al 2O 3Layer, the described second layer is SiO 2Layer, SiN xLayer or SiON xLayer.
2. chip according to claim 1 is characterized in that, also is provided with nano indium tin metal oxide current-diffusion layer between described p-type layer and the described ground floor.
3. chip according to claim 1 is characterized in that, the thickness of described ground floor is 5-10nm.
4. chip according to claim 1 is characterized in that, the thickness of the described second layer is 50-100nm.
5. chip according to claim 1 is characterized in that, described N-shaped pad and described p-type pad are made by Cr/Pt/Au.
6. the manufacture method of a light-emitting diode chip for backlight unit is characterized in that, described method comprises:
Stack gradually growing n-type layer, multiple quantum well layer and p-type layer at substrate;
Etch away the described p-type layer of part and described multiple quantum well layer, so that the described N-shaped layer of part is exposed out;
Form the N-shaped pad at exposed described N-shaped layer out, form the p-type pad at described p-type layer;
Growth of passivation layer on described p-type layer and exposed out described N-shaped layer;
It is characterized in that, described on described p-type layer and exposed out described N-shaped layer the growth of passivation layer comprise:
Stack gradually growth regulation one deck and the second layer at described p-type layer and exposed described N-shaped layer out, wherein, described ground floor is Al 2O 3Layer, the described second layer is SiO 2Layer, SiN xLayer or SiON xLayer.
7. method according to claim 6 is characterized in that, forms the N-shaped pad at described exposed described N-shaped layer out, and before described p-type layer formed the p-type pad, described method also comprised:
Depositing nano indium tin metal oxide current diffusion layer on described p-type layer;
Then, describedly stack gradually growth regulation one deck and the second layer at described p-type layer and exposed out described N-shaped layer, comprising:
Stack gradually the described ground floor of growth and the described second layer at described ITO current-diffusion layer and exposed described N-shaped layer out.
8. chip according to claim 6 is characterized in that, the thickness of described ground floor is 5-10nm.
9. chip according to claim 6 is characterized in that, the thickness of the described second layer is 50-100nm.
CN2012103585624A 2012-09-24 2012-09-24 Light-emitting diode chip and manufacturing method thereof Pending CN102881785A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104518065A (en) * 2013-10-04 2015-04-15 Lg伊诺特有限公司 Light emitting device
CN105742437A (en) * 2016-03-02 2016-07-06 华灿光电(苏州）有限公司 Light emitting diode chip and fabrication method thereof
CN105789404A (en) * 2016-03-16 2016-07-20 华灿光电(苏州）有限公司 GaN-based light-emitting diode chip and preparation method thereof
WO2022032572A1 (en) * 2020-08-13 2022-02-17 厦门三安光电有限公司 Semiconductor light-emitting element and light-emitting device

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CN101320766A (en) * 2007-06-05 2008-12-10 台达电子工业股份有限公司 Current-diffusing layer, LED device and its preparing process
US20080308832A1 (en) * 2007-06-14 2008-12-18 Epistar Corporation Light-emitting device
CN102290473A (en) * 2011-07-06 2011-12-21 中国科学院上海技术物理研究所 Back point contact crystalline silicon solar cell and preparation method thereof
CN102468391A (en) * 2010-11-03 2012-05-23 佛山市奇明光电有限公司 Light-emitting diode structure, and manufacturing method thereof

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Publication number Priority date Publication date Assignee Title
CN101320766A (en) * 2007-06-05 2008-12-10 台达电子工业股份有限公司 Current-diffusing layer, LED device and its preparing process
US20080308832A1 (en) * 2007-06-14 2008-12-18 Epistar Corporation Light-emitting device
CN102468391A (en) * 2010-11-03 2012-05-23 佛山市奇明光电有限公司 Light-emitting diode structure, and manufacturing method thereof
CN102290473A (en) * 2011-07-06 2011-12-21 中国科学院上海技术物理研究所 Back point contact crystalline silicon solar cell and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104518065A (en) * 2013-10-04 2015-04-15 Lg伊诺特有限公司 Light emitting device
CN105742437A (en) * 2016-03-02 2016-07-06 华灿光电(苏州）有限公司 Light emitting diode chip and fabrication method thereof
CN105742437B (en) * 2016-03-02 2019-01-18 华灿光电(苏州）有限公司 A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN105789404A (en) * 2016-03-16 2016-07-20 华灿光电(苏州）有限公司 GaN-based light-emitting diode chip and preparation method thereof
WO2022032572A1 (en) * 2020-08-13 2022-02-17 厦门三安光电有限公司 Semiconductor light-emitting element and light-emitting device

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Application publication date: 20130116