CN109742200A - A kind of preparation method of display panel, display panel and display device - Google Patents
A kind of preparation method of display panel, display panel and display device Download PDFInfo
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- CN109742200A CN109742200A CN201910027341.0A CN201910027341A CN109742200A CN 109742200 A CN109742200 A CN 109742200A CN 201910027341 A CN201910027341 A CN 201910027341A CN 109742200 A CN109742200 A CN 109742200A
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Abstract
The present invention provides preparation method, display panel and the display device of a kind of display panel, and the preparation method of the display panel that the present invention uses is by by the first SiO2Layer and the 2nd SiO2Direct Bonding between layer, then removed wafer substrate and buffer layer, do not need transition substrate in transfer in this way, therefore can reduce the complexity and cost of transfer process；And epitaxial structure is performed etching and to form multiple independent inorganic light-emitting diodes, the technique for not needing to be aligned in the prior art in this way, the problem of reducing the aligning accuracy that Micro LED is shifted to target base plate in the prior art.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of preparation method of display panel, display panel and show
Showing device.
Background technique
Existing glass base Micro LED, which is shown, to be needed the Micro LED on sapphire or Si substrate passing through transfer skill
Art is transferred on glass substrate, and currently used transfer techniques include electrostatic transfer, elastomeric stamp transfer, laser transfer etc., but
It is all immature that each transfer scheme is at development phase, equipment and technique, leads to shift that yield is low, speed is slow.More than and
Transfer techniques require that first Micro LED is transferred on transition substrate, then is transferred to from transition substrate using transition substrate
In target base plate, the step for not only increase the complexity and cost of transfer process, can also reduce Micro LED to target base
The aligning accuracy of plate transfer, therefore show that there is presently no more mature schemes for glass base Micro LED.
Summary of the invention
The embodiment of the invention provides a kind of preparation method of display panel, display panel and display devices, for avoiding
The complexity and cost of transfer process, and drop are increased when making glass base Micro light-emitting diode display part in the prior art
The problem of aligning accuracy that low Micro LED is shifted to target base plate.
Therefore, the embodiment of the invention provides a kind of preparation methods of display panel, comprising:
TFT backplate, first electrode and the first SiO of lamination setting are sequentially formed on underlay substrate2Layer；
Buffer layer, epitaxial structure and the 2nd SiO of lamination setting are sequentially formed on the wafer substrates2Layer；
Using wafer bonding technology by the first SiO2Layer and the 2nd SiO2Layer is bonded；
Remove the wafer substrates and the buffer layer；
The epitaxial structure is performed etching to form multiple independent inorganic light-emitting diodes；
Connect the inorganic light-emitting diode bottom and the first electrode；
The second electrode being electrically connected with the top layer of the inorganic light-emitting diode is formed on the inorganic light-emitting diode.
Optionally, in the specific implementation, in above-mentioned preparation method provided in an embodiment of the present invention, the connection nothing
The bottom of machine light emitting diode and the first electrode, specifically include:
Form bottom, the first SiO for running through the inorganic light-emitting diode2Layer and the 2nd SiO2The via hole of layer；
Filling connects the bottom of the inorganic light-emitting diode and the interconnecting piece of the first electrode in the via hole.
Optionally, in the specific implementation, in above-mentioned preparation method provided in an embodiment of the present invention, described second is being formed
Before electrode, further includes: form the interlayer dielectric layer for covering the interconnecting piece.
Optionally, in the specific implementation, in above-mentioned preparation method provided in an embodiment of the present invention, the epitaxy junction is formed
Structure specifically includes:
P-type epitaxial layer, multiple quantum well layer and N-type extension are sequentially formed in the wafer substrates for being formed with the buffer layer
Layer.
Correspondingly, the embodiment of the invention also provides a kind of display panels, including underlay substrate, are located at the underlay substrate
On successively lamination setting TFT backplate, first electrode and the first SiO2Layer, the 2nd SiO2Layer, inorganic light-emitting diode and the second electricity
Pole；Wherein the bottom of the inorganic light-emitting diode is electrically connected with the first electrode, the top layer of the inorganic light-emitting diode
It is electrically connected with the second electrode.
Optionally, in the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, the inorganic light-emitting two
The bottom of pole pipe, the first SiO2Layer and the 2nd SiO2Layer has perforative via hole, the bottom of the inorganic light-emitting diode
Layer and the first electrode are electrically connected by the interconnecting piece being filled in the via hole.
Optionally, in the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, the inorganic light-emitting two
Pole pipe includes the N-type epitaxy layer being electrically connected with the first electrode, multiple quantum well layer, the p-type being electrically connected with the second electrode
Epitaxial layer.
It optionally, in the specific implementation, further include positioned at described in above-mentioned display panel provided in an embodiment of the present invention
Interlayer dielectric layer between second electrode and the interconnecting piece.
Optionally, in the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, the inorganic light-emitting two
Pole pipe is blue light inorganic light-emitting diode or ultraviolet light inorganic light-emitting diode；
When the inorganic light-emitting diode is blue light inorganic light-emitting diode, the display panel further includes positioned at described
In second electrode with the one-to-one red sub-pixel of each inorganic light-emitting diode, green sub-pixels and transparent resin layer；
When the inorganic light-emitting diode is ultraviolet light light inorganic light-emitting diode, the display panel further includes being located at
In the second electrode with the one-to-one red sub-pixel of each inorganic light-emitting diode, green sub-pixels and the sub- picture of blue
Element.
Correspondingly, the embodiment of the invention also provides a kind of display device, including it is provided in an embodiment of the present invention above-mentioned aobvious
Show panel.
The embodiment of the present invention the utility model has the advantages that
Preparation method, display panel and the display device of above-mentioned display panel provided in an embodiment of the present invention, the present invention adopt
The preparation method of display panel is by by the first SiO2Layer and the 2nd SiO2Direct Bonding between layer, then removed wafer
Substrate and buffer layer do not need transition substrate in transfer in this way, therefore can reduce the complexity and cost of transfer process；And
Epitaxial structure is performed etching to form multiple independent inorganic light-emitting diodes, does not need to be aligned in the prior art in this way
Technique, the problem of reducing the aligning accuracy that Micro LED is shifted to target base plate in the prior art.
Detailed description of the invention
Fig. 1 is one of the flow diagram of preparation method of display panel provided in an embodiment of the present invention；
Fig. 2 is the two of the flow diagram of the preparation method of display panel provided in an embodiment of the present invention；
Fig. 3 is one of the structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 4 is the second structural representation of display panel provided in an embodiment of the present invention；
Fig. 5 A to Fig. 5 J is structural schematic diagram of the display panel shown in Fig. 3 after executing each step；
Fig. 6 is the structural schematic diagram of display device provided in an embodiment of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.
Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts all
Other embodiments shall fall within the protection scope of the present invention.
The shapes and sizes of each component do not reflect actual proportions in attached drawing, and purpose is schematically illustrate the content of present invention.
A kind of preparation method of display panel provided in an embodiment of the present invention, as shown in Figure 1, comprising:
S101, TFT backplate, first electrode and the first SiO that lamination setting is sequentially formed on underlay substrate2Layer；Specifically
Ground forms TFT backplate and specifically includes to form multiple TFT elements, capacity cell；In the TFT backplate that preparation is completed, it can use
Vapour deposition method prepares multiple independent first electrodes, prepares the first SiO using CVD2Layer；
S102, buffer layer, epitaxial structure and the 2nd SiO for sequentially forming lamination setting on the wafer substrates2Layer；Specifically
Ground, wafer substrates can be the substrates such as sapphire, Si, GaN, and epitaxial structure (Epitaxy layer) is by III-V such as In, Ga, N
Race's element is constituted, and is prepared using MOCVD technique；After having prepared epitaxial structure, the 2nd SiO is prepared using CVD2Layer；
S103, using wafer bonding technology by the first SiO2Layer and the 2nd SiO2Layer is bonded；Specifically, using SiO2-
SiO2Bonding techniques are by the first SiO2Layer and the 2nd SiO2Layer is bonded；
S104, removed wafer substrate and buffer layer；It specifically, can if wafer substrates are sapphire (sapphire) substrates
Chemical etching method can be used if wafer substrates are Si or GaN substrate using laser lift-off (laser lift off, LLO) technology
Carry out substrate desquamation；After wafer substrates removing, epitaxial structure is transferred in TFT backplate；
S105, epitaxial structure is performed etching to form multiple independent inorganic light-emitting diodes；Specifically, using semiconductor
Photoetching process prepares the i.e. micro- LED chip array of multiple independent inorganic light-emitting diodes；
S106, the bottom and first electrode for connecting inorganic light-emitting diode；
S107, the second electrode being electrically connected with the top layer of inorganic light-emitting diode is formed on inorganic light-emitting diode；Tool
Body, second electrode is prepared using evaporation process, second electrode is the structure of a flood, can be used as public electrode.
The preparation method of above-mentioned display panel provided in an embodiment of the present invention, by by the first SiO2Layer and the 2nd SiO2Layer
Between Direct Bonding, then removed wafer substrate and buffer layer do not need transition substrate in transfer in this way, therefore can drop
The complexity and cost of low transfer process；And epitaxial structure is performed etching and to form multiple independent inorganic light-emitting diodes, this
Sample does not need the technique aligned in the prior art, reduces pair that Micro LED is shifted to target base plate in the prior art
The problem of position precision.
In the specific implementation, in above-mentioned preparation method provided in an embodiment of the present invention, as shown in Fig. 2, connecting inorganic hair
The bottom and first electrode of optical diode, specifically include:
S201, bottom, the first SiO for running through inorganic light-emitting diode are formed2Layer and the 2nd SiO2The via hole of layer；
S202, filling connects the bottom of inorganic light-emitting diode and the interconnecting piece of first electrode in via hole.
In the specific implementation, the material of interconnecting piece is metal material.
In the specific implementation, since epitaxial structure is etched to multiple independent inorganic light-emitting diodes, in order to avoid
Two electrodes are electrically connected with the bottom of inorganic light-emitting diode, in above-mentioned preparation method provided in an embodiment of the present invention, are being formed
Before second electrode, further includes: form the interlayer dielectric layer of covering interconnecting piece.Second electrode and inorganic light-emitting diode in this way
Bottom will not be electrically connected.
In the specific implementation, in above-mentioned preparation method provided in an embodiment of the present invention, epitaxial structure is formed, it is specific to wrap
It includes:
P-type epitaxial layer, multiple quantum well layer and N-type epitaxy layer are sequentially formed in the wafer substrates for be formed with buffer layer.Tool
Body, p-type epitaxial layer can be P-GaN, and N-type epitaxy layer can be N-GaN.
Based on the same inventive concept, the embodiment of the invention also provides a kind of display panels, as shown in figure 3, including substrate
Substrate 1, TFT backplate 2, first electrode 3 and the first SiO that successively lamination is arranged on underlay substrate 12The 4, the 2nd SiO of layer2Layer
5, inorganic light-emitting diode 6 and second electrode 7；Wherein the bottom of inorganic light-emitting diode 6 is electrically connected with first electrode 3, inorganic
The top layer of light emitting diode 6 is electrically connected with second electrode 7.
In the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, underlay substrate can be glass lined
Bottom.
In the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, as shown in figure 3, inorganic light-emitting two
Bottom 6, the first SiO of pole pipe2Layer 4 and the 2nd SiO2Layer 5 has perforative via hole V, the bottom of inorganic light-emitting diode 6 and the
One electrode 3 is electrically connected by the interconnecting piece 01 being filled in via hole V.Specifically, the material of interconnecting piece 01 is metal material.
In the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, as shown in figure 3, inorganic light-emitting two
Pole pipe 6 includes the N-type epitaxy layer 61 being electrically connected with first electrode 3, multiple quantum well layer 62, outside the p-type that connect with second electrode electric 7
Prolong layer 63.Specifically, p-type epitaxial layer can be P-GaN, and N-type epitaxy layer can be N-GaN.
In the specific implementation, since epitaxial structure is etched to multiple independent inorganic light-emitting diodes, in order to avoid
Two electrodes are electrically connected with the bottom of inorganic light-emitting diode, therefore in above-mentioned display panel provided in an embodiment of the present invention, such as
It further include the interlayer dielectric layer 8 between second electrode 7 and interconnecting piece 01 shown in Fig. 3.
In the specific implementation, in above-mentioned display panel provided in an embodiment of the present invention, inorganic light-emitting diode is blue light
Inorganic light-emitting diode or ultraviolet light inorganic light-emitting diode；
When inorganic light-emitting diode 6 is blue light inorganic light-emitting diode, as shown in figure 3, display panel further includes being located at
In second electrode 7 with the one-to-one red sub-pixel R of each inorganic light-emitting diode 6, green sub-pixels G and transparent resin layer
02；Blue light inorganic light-emitting diode, red sub-pixel R and green sub-pixels G, which can be mixed, in this way launches white light, transparent resin
Layer 02 can be the transparent resin of colourless conversion nanoparticles；
When inorganic light-emitting diode 6 is ultraviolet light light inorganic light-emitting diode, display panel further includes being located at the second electricity
Extremely upper and the one-to-one red sub-pixel R of each inorganic light-emitting diode 6, green sub-pixels G and blue subpixels B；It is red in this way
Sub-pixels R, green sub-pixels G and blue subpixels B, which can be mixed, launches white light.
In the specific implementation, it in above-mentioned display panel provided in an embodiment of the present invention, as shown in Figure 3 and Figure 4, is making
Complete correspondingly red sub-pixel R, green sub-pixels G and transparent resin layer 02 or red sub-pixel R, green sub-pixels G and blue
After sub-pixel B, circular polarizing disk can be sticked, or further includes the substrate 9 being oppositely arranged with underlay substrate 1, substrate 9 is with touching
The substrate of function, i.e. inorganic self light emitting of the composition with touch function are controlled, since LED is phosphor, work
Make that temperature range is wide, the service life is long, resistance to high current density, may be implemented high brightness, and it is provided by the invention will be in wafer substrates
Structure be transferred to the bonding technology in glass substrate and replace existing shifting process, yield can be improved, improve efficiency, increase essence
Degree, thus it is suitble to the device of production high-resolution, high colour gamut.
It is carried out below by preparation method of the specific example to display panel shown in Fig. 3 provided in an embodiment of the present invention
Be described in detail, as shown in Fig. 5 A to 5J, the preparation method specifically includes the following steps:
(1) TFT backplate 2, first electrode 3 and the first SiO of lamination setting are sequentially formed on underlay substrate 12Layer 4, such as
Shown in Fig. 5 A；Specifically, TFT backplate 2 specifically includes buffer layer, active layer, gate insulating layer, on underlay substrate 1
One grid, second grid, insulating layer, source-drain electrode and flatness layer, first electrode 3 pass through the via hole and TFT backplate 2 through flatness layer
Drain electrode be connected, the function and connection relationship of these film layers of above-mentioned TFT backplate 2 are the same as those in the prior art, do not do herein in detail
It states；First electrode 3 is specifically prepared using vapour deposition method, the first SiO is prepared using CVD2Layer 4；
(2) buffer layer 11, epitaxial structure 12 and the 2nd SiO of lamination setting are sequentially formed in wafer substrates 102Layer 5；
Specifically, epitaxial structure 12 includes the p-type epitaxial layer 63 (such as P-GaN) being cascading, multiple quantum well layer 62 and N-type extension
61 (such as N-GaN) of layer；After having prepared epitaxial structure 12, the 2nd SiO is prepared using CVD2Layer 5, as shown in Figure 5 B；
(3) SiO is used2-SiO2Bonding techniques are by the first SiO2Layer 4 and the 2nd SiO2Layer 5 is bonded, as shown in Figure 5 C；
(4) removed wafer substrate 10 and buffer layer 11, specifically, if wafer substrates 10 are sapphire (sapphire) linings
Laser lift-off (laser lift off, LLO) technology can be used, if wafer substrates 10 are Si or GaN substrate, can be used in bottom
It learns etching method and carries out substrate desquamation, as shown in Figure 5 D；
(5) epitaxial structure 12 is performed etching to form multiple independent inorganic light-emitting diodes using semiconductor lithography process
6, as shown in fig. 5e；
(6) bottom (i.e. N-type epitaxy layer 61), the first SiO for running through inorganic light-emitting diode 6 are formed2Layer 4 and the 2nd SiO2
The via hole V of layer 5, as illustrated in figure 5f；
(7) bottom (i.e. N-type epitaxy layer 61) and first electrode 3 for connecting inorganic light-emitting diode 6 are filled in via hole V
Interconnecting piece 01, as depicted in fig. 5g.
(8) interlayer dielectric layer 8 of covering interconnecting piece 02 is formed, as illustrated in fig. 5h；
(9) it is formed on inorganic light-emitting diode 6 and is electrically connected with the top layer (i.e. p-type epitaxial layer 63) of inorganic light-emitting diode 6
The second electrode 7 connect, as shown in fig. 5i；
(10) it is formed and the one-to-one red sub-pixel R of inorganic light-emitting diode 6, green sub-pixels G and transparent resin
Layer 02, as indicated at figure 5j；
(11) structure of substrate 9 and above-mentioned steps (10) formation with touch function is formed into the embodiment of the present invention to box
Display panel shown in Fig. 3.
(1)-(11) can obtain display panel shown in Fig. 3 of the embodiment of the present invention through the above steps.
It should be noted that patterning processes can only include photoetching in above-mentioned preparation method provided in an embodiment of the present invention
Technique, or, may include photoetching process and etch step, while can also include printing, ink-jet etc. other be used to form it is pre-
The technique for determining figure；Photoetching process, which refers to, utilizes photoresist, mask plate, exposure including technical process such as film forming, exposure, developments
The technique of the formation figure such as machine.In the specific implementation, can according to the present invention formed in the corresponding patterning processes of structure choice.
Based on the same inventive concept, the embodiment of the invention also provides a kind of display devices, including in above-described embodiment
Display panel.Since the principle that the display device solves the problems, such as is similar to a kind of aforementioned display panel, the display device
Implementation may refer to the implementation of aforementioned display panel, and overlaps will not be repeated.
In the specific implementation, above-mentioned display device provided in an embodiment of the present invention can be comprehensive screen display device, or
Or flexible display apparatus etc., it is not limited thereto.
In the specific implementation, above-mentioned display device provided in an embodiment of the present invention as shown in FIG. 6 can shield comprehensively
Mobile phone.Certainly, above-mentioned display device provided in an embodiment of the present invention may be tablet computer, television set, display, notebook
Any products or components having a display function such as computer, Digital Frame, navigator.Other for the display device must can not
Few component part is it will be apparent to an ordinarily skilled person in the art that having, and this will not be repeated here, also be should not be used as pair
Limitation of the invention.
Preparation method, display panel and the display device of above-mentioned display panel provided in an embodiment of the present invention, the present invention adopt
The preparation method of display panel is by by the first SiO2Layer and the 2nd SiO2Direct Bonding between layer, then removed wafer
Substrate and buffer layer do not need transition substrate in transfer in this way, therefore can reduce the complexity and cost of transfer process；And
Epitaxial structure is performed etching to form multiple independent inorganic light-emitting diodes, does not need to be aligned in the prior art in this way
Technique, the problem of reducing the aligning accuracy that Micro LED is shifted to target base plate in the prior art.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of preparation method of display panel characterized by comprising
TFT backplate, first electrode and the first SiO of lamination setting are sequentially formed on underlay substrate2Layer；
Buffer layer, epitaxial structure and the 2nd SiO of lamination setting are sequentially formed on the wafer substrates2Layer；
Using wafer bonding technology by the first SiO2Layer and the 2nd SiO2Layer is bonded；
Remove the wafer substrates and the buffer layer；
The epitaxial structure is performed etching to form multiple independent inorganic light-emitting diodes；
Connect the inorganic light-emitting diode bottom and the first electrode；
The second electrode being electrically connected with the top layer of the inorganic light-emitting diode is formed on the inorganic light-emitting diode.
2. preparation method as described in claim 1, which is characterized in that the bottom of the connection inorganic light-emitting diode and
The first electrode, specifically includes:
Form bottom, the first SiO for running through the inorganic light-emitting diode2Layer and the 2nd SiO2The via hole of layer；
Filling connects the bottom of the inorganic light-emitting diode and the interconnecting piece of the first electrode in the via hole.
3. preparation method as claimed in claim 2, which is characterized in that before forming the second electrode, further includes: formed
Cover the interlayer dielectric layer of the interconnecting piece.
4. preparation method as described in any one of claims 1-3, which is characterized in that form the epitaxial structure, specifically include:
P-type epitaxial layer, multiple quantum well layer and N-type epitaxy layer are sequentially formed in the wafer substrates for being formed with the buffer layer.
5. a kind of display panel, which is characterized in that including underlay substrate, on the underlay substrate successively lamination setting
TFT backplate, first electrode and the first SiO2Layer, the 2nd SiO2Layer, inorganic light-emitting diode and second electrode；It is wherein described inorganic
The bottom of light emitting diode is electrically connected with the first electrode, the top layer of the inorganic light-emitting diode and second electrode electricity
Connection.
6. display panel as claimed in claim 5, which is characterized in that the bottom of the inorganic light-emitting diode, described first
SiO2Layer and the 2nd SiO2Layer has perforative via hole, and the bottom of the inorganic light-emitting diode and the first electrode are logical
Cross the interconnecting piece electrical connection being filled in the via hole.
7. display panel as claimed in claim 6, which is characterized in that the inorganic light-emitting diode include and it is described first electricity
The N-type epitaxy layer of pole electrical connection, multiple quantum well layer, the p-type epitaxial layer being electrically connected with the second electrode.
8. display panel as claimed in claim 6, which is characterized in that further include being located at the second electrode and the interconnecting piece
Between interlayer dielectric layer.
9. display panel as claimed in claim 5, which is characterized in that the inorganic light-emitting diode is blue light inorganic light-emitting two
Pole pipe or ultraviolet light inorganic light-emitting diode；
When the inorganic light-emitting diode is blue light inorganic light-emitting diode, the display panel further includes being located at described second
On electrode with the one-to-one red sub-pixel of each inorganic light-emitting diode, green sub-pixels and transparent resin layer；
When the inorganic light-emitting diode is ultraviolet light light inorganic light-emitting diode, the display panel further includes positioned at described
In second electrode with the one-to-one red sub-pixel of each inorganic light-emitting diode, green sub-pixels and blue subpixels.
10. a kind of display device, which is characterized in that including such as described in any item display panels of claim 5-8.
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| CN110265587A (en) * | 2019-07-09 | 2019-09-20 | 昆山梦显电子科技有限公司 | Display panel and its manufacturing method |
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