CN102437170B - Blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and manufacturing method thereof - Google Patents
Blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and manufacturing method thereof Download PDFInfo
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- CN102437170B CN102437170B CN201110367494.3A CN201110367494A CN102437170B CN 102437170 B CN102437170 B CN 102437170B CN 201110367494 A CN201110367494 A CN 201110367494A CN 102437170 B CN102437170 B CN 102437170B
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Abstract
The invention discloses a blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and a manufacturing method thereof. A semiconductor integrating technique is utilized to integrate double TFTs and a blue LED unit on one substrate; blue-light-excited fluorescent powder is utilized to implement white light emission; and a color film technology is utilized to implement blue-light-excited TFT-LED array display. Two TFTs and a capacitor are integrated on each isolated light-emitting array unit as a control circuit of the light emitting unit; a fluorescent powder layer is covered on the array substrate, and a color film substrate matched with the array substrate is covered on the fluorescent powder layer; or the fluorescent powder layer and the color film substrate are integrated, and the color film substrate is directly covered on the array substrate. The substrate disclosed by the invention can overcome the defects in the existing LED and LCD (liquid crystal display) display to some extent, and greatly enhance the display quality and display effect; and the manufacturing method is compatible with the existing semiconductor technique, and can easily implement industrialization.
Description
Technical field
The present invention relates to a kind of LED array display base plate and manufacture method thereof, relate in particular to a kind of blue-light excited TFT-LED array display substrate structure and manufacture method thereof.
Background technology
Along with the continuous improvement of people's material and cultural life, people are also more and more higher to the requirement of Display Technique.The progressively aspect development such as, power consumptive province little, lightweight towards panelized, volume of Display Technique.Owing to having that volume is little, radiation is little and low in energy consumption etc., advantage has obtained development rapidly to liquid crystal display, becomes the main flow of current Display Technique, in many applications, is progressively replacing traditional CRT Display Technique.But the response speed of liquid crystal display is relatively slow, in color rendition, also exist a lot of not enough.Along with take being successful of blue-ray LED that GaN is luminescent material the nineties in last century, it is white luminous that blue-ray LED excites yellow fluorescent powder to realize, and this provides good basis for LED color display technology.LED has that luminous efficiency is high, color rendering good and the advantage such as energy savings, aspect current large scale display, is being widely used.Current light-emitting diode display is mainly formed by monochromatic LED unit spliced, has that power consumption is few, brightness is high, operating voltage is low, driving is simple, the life-span is long, fast response time and a steady performance.But there is the deficiencies such as resolution is low, color uniformity is poor, volume is large in the light-emitting diode display that the splicing form adopting at present forms, the harmony of the different splicing parts of light-emitting diode display and consistency are difficult to guarantee, cost of manufacture is relatively high, high power device heat dissipation design difficulty, be only applicable to the problems such as large scale display, limited further developing of splicing LED chromogenic device.
Summary of the invention
The invention provides a kind of blue-light excited TFT-LED array display base plate and manufacture method thereof, it is manufactured, and the light-emitting diode display resolution obtaining is high, volume is little, radiating effect is good, can realize very color and the small screen demonstration, and there is the not available advantage of other display modes.
A kind of blue-light excited TFT-LED array display base plate provided by the invention, comprises substrate, is followed successively by resilient coating and N-shaped GaN layer above substrate; On N-shaped GaN layer, be blue light-emitting layer, on blue light-emitting layer, be followed successively by p-type GaN layer and transparent electrode layer; N-shaped GaN layer, blue light-emitting layer, p-type GaN layer and transparent electrode layer form display unit jointly, are provided with controlled area on display unit, are provided with lead district between display unit; In controlled area, be provided with by capacitor bottom crown and capacitor top crown, and be in the capacitor that the insulating barrier between them forms together; The work TFT being formed by work TFT grid, work TFT raceway groove, work TFT source electrode, work TFT drain electrode and intermediate insulating layer; And by the control TFT that controls TFT grid, controls TFT raceway groove, controls TFT source electrode and control TFT drain electrode and intermediate insulating layer forms; In lead district, be provided with N-shaped GaN layer ground lead, work TFT source lead, controls TFT source lead and controls TFT grid lead; Wherein capacitor bottom crown contacts with N-shaped GaN layer, and N-shaped GaN layer ground lead is connected with capacitor bottom crown; Capacitor top crown is connected with work TFT grid and control TFT drain electrode respectively, work TFT drain electrode is connected with transparent electrode layer, the TFT source electrode of working is connected with work TFT source lead, controls TFT source electrode and is connected with control TFT source lead, controls TFT grid and is connected with control TFT grid lead; Insulating barrier, between each layer of metal electrode and different layers lead-in wire, has passivation protection layer in controlled area and lead district; Above transparent electrode layer, cover phosphor powder layer, above phosphor powder layer, cover supporting color membrane substrates; Or be the structure that phosphor powder layer and color membrane substrates become one.During concrete making, the color cell inner side of each color film is applied to certain thickness phosphor powder layer, then directly color membrane substrates is covered on transparent electrode layer.
Above array base palte, be coated with phosphor powder layer, the selection of phosphor material powder need to meet blue-ray LED and excite, the light sending by with blue light colour mixture after obtain the requirement of white light.On phosphor powder layer, be coated with color membrane substrates, color cell on color membrane substrates distributes and light transmittance will meet the requirement of colored demonstration to pixel unit, the size and shape of color cell need with LED substrate on array element match.In addition, also phosphor powder layer and color membrane substrates can be integrated, color cell inner side at each color film applies certain thickness phosphor powder layer, then directly color membrane substrates is covered on array base palte, thereby avoids phosphor powder layer to be directly coated on LED array substrate.
Backing material can be sapphire single-crystal substrate or SiC single crystalline substrate.N-shaped semiconductor layer and p-type semiconductor layer are comprised of p-type or the N-shaped GaN epitaxial film of different levels of doping, and wherein N-shaped semiconductor layer can mix Si, and p-type semiconductor layer can mix Mg, Zn etc.
Blue light-emitting layer forms light emitting array, and the luminescent layer of each light emitting array is the InGaN of individual layer or the InGaN layer of multilayer and GaN layer, forms multiple quantum well layer.Transparent electrode layer is ITO, IZO or the kin transparent electrode material of growth in situ.
Capacitor bottom crown, top crown, work TFT grid, work TFT drain electrode, work TFT source electrode, the material of controlling TFT grid, control TFT drain electrode, control TFT source electrode and various lead-in wires is the alloy of one or more compositions in the metals such as Mo, Au, Cu, Ag, Ni or Al, or their collocation or combination.Insulating barrier and passivation protection layer can adopt SiO
x, SiN
xor SiO
xn
ydeng insulating material.Work TFT raceway groove and control TFT channel layer adopt the semi-conducting materials such as amorphous silicon (a-Si), polysilicon (poly-Si) or monocrystalline silicon (Si).
Phosphor powder layer adopts yttrium-aluminium-garnet yellow-green fluorescence powder YAG:Ce
3+, or YAG:Ce
3+with tungstate red fluorescent powder SrWO
4: Eu
3+collocation, or blue-light excited lower sent light by with blue light colour mixture after obtain other fluorescent material of white light.
Color membrane substrates comprises red resin, green resin and blue resins, and other assemblies relevant to color film.
The present invention also provides a kind of manufacture method of blue-light excited TFT-LED array display base plate simultaneously, comprises the following steps:
Step 1, on substrate base, utilize mocvd method to deposit successively resilient coating, N-shaped GaN layer;
Step 7, in controlled area and lead district, adopt PECVD method depositing insulating layer, then on insulating barrier, adopt magnetron sputtering method to deposit metal level II, metal level II is carried out after photoetching and etching, metal level II on controlled area has formed respectively capacitor top crown, the work TFT grid being connected with capacitor top crown and has controlled TFT grid, and the metal level II in lead district has formed control TFT grid lead;
Blue light-emitting layer forms light emitting array, and the luminescent layer of each light emitting array is the blue light-emitting layer InGaN of individual layer or the InGaN layer of multilayer and GaN layer, forms multiple quantum well layer blue light-emitting layer.
N-shaped GaN layer, blue light-emitting layer and p-type GaN layer adopt MOCVD(metallo-organic compound gas deposition) technique, or adopt MBE(molecular beam epitaxy) method preparation.
Photoetching technique adopts the universal method adopting on semiconductor technology, and lithographic method adopts the combination of dry quarter (as strengthened plasma etching, reactive ion etching etc.), wet etching or above method
Adopt method growth transparent electrode layer, metal level I, metal level II, the metal level of magnetron sputtering or electron beam evaporation
with metal level IV; Insulating barrier, a-Si active layer and passivation protection layer adopt PECVD(plasma enhanced chemical vapor deposition) method deposits, and the active layer of polysilicon or monocrystalline silicon need adopt the more complicated technique growth of ratio PECVD of being combined with heat treatment phase.
The present invention adopts mocvd method to deposit in large area single crystalline substrate to have equally resilient coating and the N-shaped GaN layer of complete structure, and on N-shaped GaN layer by MOCVD technique growth blue led luminescent layer, the preparation of p-type GaN layer and transparent electrode layer, use lithographic technique that blue light-emitting layer, p-type GaN layer and transparent electrode layer are separated into array of display, on the light emitting array unit isolating at each by integrated two TFT and capacitor the control circuit as this luminescence unit.Therefore the volume of each pixel luminescence unit can be little more a lot of than the single led luminescence unit of existing LED large scale display, and the pixel unit sizableness showing with current LCD, can improve greatly the resolution of demonstration, thereby can greatly improve display quality.In addition, N-shaped GaN layer is en-block construction, and on N-shaped GaN layer, connection metal lead-in wire, also has metal lead wire in lead district, thereby can greatly improve the heat dissipation problem of product.Production technology and existing semiconductor technology are compatible, and when being easy to extensive industrialization, properties of product increase substantially.
The operation principle of the blue-light excited TFT-LED array of the present invention display base plate is: TFT-LED color array display base plate comprises a capacitor, a work TFT and a control TFT; Work TFT source electrode is connected with driving power by work TFT source lead, controlling TFT grid is connected with sweep signal by controlling TFT grid lead, controlling TFT source electrode is connected with data-signal by controlling TFT source lead, capacitor infrabasal plate is connected with N-shaped layer with LED, and is connected with ground lead; When control TFT grid lead has sweep signal, control TFT in opening, data-signal is sent to work TFT grid by controlling TFT source electrode, and is capacitor charging.The outer driving voltage of supposing work TFT is constant, and works in non-saturated region more than cut-ff voltage, and the size of work TFT drain current is determined by the TFT grid voltage of working; When control TFT grid lead does not have sweep signal, control TFT in cut-off state, be stored in the voltage that electric charge in capacitor still can maintenance work TFT grid and keep constant, make work TFT in opening, so just guaranteed in the whole frame period, LED has constant electric current to be passed through.This circuit, by controlling the voltage of the voltage data signal change work TFT grid in TFT source lead, is controlled and is flow through the electric current of work TFT, thereby controlled the electric current that flows through LED, reaches the object of controlling LED luminosity.
Owing to having adopted above-mentioned technical scheme, compared with prior art, the present invention adopts a kind of brand-new thinking, adopt semiconductor integrated technique, luminescence unit (LED unit) and luminous control unit (TFT unit) are integrated on underlay substrate complete on same substrate jointly, thereby form array of display substrate.According to the needs that show, the state of each luminescence unit is controlled by the control unit of answering in contrast, and the on off state of each array light-emitting unit can regulate by the control unit being connected with circuit with bright degree (gray scale).In order to realize colored demonstration, first outside blue-light LED chip array, apply the high-quality fluorescent material of suitable kind (as yttrium-aluminium-garnet yellow-green fluorescence powder YAG:Ce
3+, or YAG:Ce
3+with tungstate red fluorescent powder SrWO
4: Eu
3+arrange in pairs or groups), thus after the blue-light excited fluorescent material colour mixture of sending by LED, realize white luminous.The blue light that InGaN blue-light LED chip unit sends (centre wavelength is roughly positioned at 450-480nm left and right) is luminous for excitated fluorescent powder, and the green-yellow light that fluorescent material sends is (as YAG:Ce
3+, the about 550nm of centre wavelength) and ruddiness (as SrWO
4: Eu
3+, the about 613nm of centre wavelength) and send out residue blue light formation white light with LED.On white luminous basis, by matching with color membrane technology, select color film (Color Filter) substrate corresponding with LED array substrate, thereby white light is reduced into and shows needed Red, Blue, Green.Color cell on color membrane substrates distributes and light transmittance will meet the colored requirement showing pixel unit.Under the cooperation of control unit, thereby realize colored demonstration.The light-emitting diode display resolution of manufacture is high like this, volume is little, radiating effect is good, can realize very color and the small screen demonstration, the environment such as applicable family and office, can effectively overcome the deficiency of existing splicing light-emitting diode display and TFT-LCD, and have the not available advantage of other display modes.Preparation method of the present invention and existing semiconductor technology are compatible, and when being easy to extensive industrialization, properties of product increase substantially simultaneously.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is sapphire Al
2o
3(0001) sectional view after epitaxial growth buffer and n-GaN layer on face substrate;
Fig. 3 is the sectional view of growing after blue light-emitting layer on n-GaN layer;
The sectional view of Fig. 4 for growing on blue light-emitting layer after p-GaN layer;
The sectional view of Fig. 5 for growing after transparency electrode on p-GaN layer;
Fig. 6 is the plane graph after etching formation control district and lead district on Fig. 5 basis;
Fig. 7 is the sectional view in corresponding A-A cross section in Fig. 6;
Fig. 8 is depositing metal layers
rear etching forms the plane graph of capacitor bottom crown and N-shaped GaN layer ground lead;
Fig. 9 is the sectional view in corresponding A-A cross section in Fig. 8;
Figure 10 is depositing metal layers
after, etching forms capacitor top crown, the work TFT grid being connected with capacitor top crown and control TFT grid, and in lead district the plane graph after formation control TFT grid lead;
Figure 11 is the sectional view in corresponding A-A cross section in Figure 10;
Figure 12, for depositing a-Si active layer, carries out photoetching and etching, forms work TFT raceway groove and controls TFT raceway groove, and on gate insulation layer, forming the plane graph after work TFT grid lead end via hole;
Figure 13 is the sectional view in corresponding A-A cross section in Figure 12;
Figure 14 is the sectional view in corresponding B-B cross section in Figure 12;
Figure 15 is the sectional view in corresponding C-C cross section in Figure 12;
Figure 16 is depositing metal layers III, and carries out photoetching and etching, the plane graph after source, drain electrode and the control TFT source lead of the source of formation work TFT, drain electrode, control TFT;
Figure 17 is the sectional view in middle corresponding A-A cross section of Figure 16;
Figure 18 is the sectional view in the middle corresponding B-B cross section of Figure 16;
Figure 19 is the sectional view in the middle corresponding C-C cross section of Figure 16;
Figure 20 is depositing metal layers IV, carries out photoetching and etching, forms the plane graph of work TFT source lead;
The plane graph of Figure 21 for growing after passivation protection layer;
Figure 22 is the sectional view in corresponding A-A cross section in Figure 21;
Figure 23 is the sectional view in corresponding B-B cross section in Figure 21;
Figure 24 is the sectional view in corresponding C-C cross section in Figure 21.
Reference numeral
1, substrate;
2, resilient coating;
3, N-shaped GaN layer;
4, luminescent layer;
5, p-type GaN layer;
6, transparent electrode layer;
7, controlled area;
8, lead district;
9, luminous zone;
10, capacitor bottom crown;
11, n electrode grounding lead-in wire;
12, capacitor top crown;
13, work TFT grid;
14, work TFT grid lead;
15, control TFT grid;
16, control TFT grid lead;
17, work TFT raceway groove;
18, control TFT raceway groove;
19, control TFT source electrode;
20, control TFT source lead;
21, control TFT drain electrode;
22, work TFT source electrode;
23, work TFT drain electrode;
24, work TFT source lead;
25, insulating barrier;
26, passivation protection layer.
Embodiment
A kind of blue-light excited TFT-LED array display substrate structure of the present invention as shown in figure 24, is followed successively by resilient coating 2 and N-shaped GaN layer 3 above substrate 1; On N-shaped GaN layer 3, be blue light-emitting layer 4, on blue light-emitting layer, be followed successively by p-type GaN layer 5 and transparent electrode layer 6.The common display unit that forms of N-shaped GaN layer 3, blue light-emitting layer 4, p-type GaN layer 5 and transparent electrode layer 6 is provided with controlled area 7 on display unit, is provided with lead district 8 between display unit.In controlled area 7, be provided with by capacitor bottom crown 10 and capacitor top crown 12, and be in the capacitor that the insulating barrier 25 of bottom crown between them forms together.The work TFT being formed by work TFT grid 13, work TFT raceway groove 17, work TFT source electrode 22, work TFT drain electrode 23 and intermediate insulating layer 25; And by the control TFT that controls TFT grid 15, controls TFT raceway groove 18, controls TFT source electrode 19 and control TFT drain electrode 21 and intermediate insulating layer 25 forms.In lead district, be provided with N-shaped GaN layer ground lead 11, work TFT source lead 24, controls TFT source lead 20 and controls TFT grid lead 16.Wherein capacitor bottom crown 10 and N-shaped GaN layer 3 good contact, ground lead 11 is the extension of capacitor bottom crown 10; Capacitor top crown 12 is connected with work TFT grid 13 and control TFT drain electrode 21 respectively, work TFT drain electrode 23 is connected with transparent electrode layer 6, work TFT source electrode 22 is connected with work TFT source lead 24, control TFT source electrode 19 and be connected with control TFT source lead 20, control TFT grid 15 and be connected with control TFT grid lead 16.Between each layer of metal electrode and different layers lead-in wire, there is insulating barrier 25, in controlled area 7 and lead district 8, have passivation protection layer 26.Above array base palte, cover phosphor powder layer, above phosphor powder layer, cover the color membrane substrates supporting with array base palte.(or phosphor powder layer and color membrane substrates can be integrated, color cell inner side at each color film applies certain thickness phosphor powder layer, then directly color membrane substrates is covered on array base palte, thereby avoid phosphor powder layer to be directly coated on LED array substrate.）
In the present invention, the gallium source of MOCVD method is TMGa(trimethyl gallium), nitrogenous source is NH
3(ammonia), indium source is TMIn(trimethyl indium), aluminium source is TMAl(trimethyl aluminium), magnesium source is TMMg(trimethyl magnesium), silicon source is SiH
4(silane).
Be below the manufacture method of the blue-light excited TFT-LED array of this embodiment display base plate, it comprises following key step:
Step 1, adopt large-area monoblock sapphire single-crystal as substrate 1, substrate 1 is put into MOCVD equipment, first pass into H
2under atmosphere, be heated to 1100 ℃ of baking 20min; Then at 800 ℃, pass into nitrogen and substrate is carried out to the nitrogen treatment of 100s; After processing, pass into NH
3(ammonia) and TMAl(trimethyl aluminium), vapor phase epitaxial growth thickness is 80nm on substrate under the condition of 800 ℃ AlN resilient coating, then pass into TMGa(trimethyl gallium) and ammonia growth thickness at 600 ℃ GaN resilient coating that is 200nm; AlN resilient coating, GaN resilient coating form resilient coating 2 jointly; Under the condition of 600 ℃, pass into SiH
4(silane) N-shaped GaN layer 3 that growth thickness is 2um on resilient coating 2, as shown in Figure 2;
Step 7, substrate is cleaned after, layer of sin x or SiO grow in controlled area 7 and lead district 8 by PECVD method
2as insulating barrier 25; Then continue to adopt magnetron sputtering method on insulating barrier 26, to deposit metal level II, metal level II is carried out to photoetching and etching, insulating barrier 26 on controlled area has formed the dielectric layer of capacitor, metal level II on controlled area has formed respectively capacitor top crown 12, the work TFT grid 13 being connected with capacitor top crown 12 and work TFT grid lead 14, and control TFT grid 15, metal level II in lead district 8 has formed control TFT grid lead 16, as shown in Figure 10, Figure 11;
According to above-mentioned steps and technique, can obtain the blue-light excited TFT-LED array display base plate compared with good quality.
Above said content of the present invention, only provided and realized a kind of embodiment of the present invention, but shape, the thickness of the each several part structure in this scheme, and process conditions can change, but this change does not depart from double T FT structure, to control LED luminous, and form white light and coordinate color film to meet thought and the category of display requirement by blue-light excited fluorescent material, all changes that those skilled in the art oneself are understood should be included within the scope of described claim.
Claims (9)
1. a blue-light excited TFT-LED array display base plate, comprises substrate (1), it is characterized in that: in substrate (1) top, be followed successively by resilient coating (2) and N-shaped GaN layer (3); Upper for blue light-emitting layer (4) at N-shaped GaN layer (3), on blue light-emitting layer, be followed successively by p-type GaN layer (5) and transparent electrode layer (6); N-shaped GaN layer (3), blue light-emitting layer (4), p-type GaN layer (5) and transparent electrode layer (6) form display unit jointly, are provided with controlled area (7) on display unit, are provided with lead district (8) between display unit; In controlled area (7), be provided with by capacitor bottom crown (10) and capacitor top crown (12), and be in the capacitor that the insulating barrier (25) between them forms together; The work TFT being formed by work TFT grid (13), work TFT raceway groove (17), work TFT source electrode (22), work TFT drain electrode (23) and intermediate insulating layer (25); And by the control TFT that controls TFT grid (15), controls TFT raceway groove (18), controls TFT source electrode (19) and control TFT drain electrode (21) and intermediate insulating layer (25) forms; In lead district, be provided with N-shaped GaN layer ground lead (11), work TFT source lead (24), controls TFT source lead (20) and controls TFT grid lead (16); Wherein capacitor bottom crown (10) contacts with N-shaped GaN layer (3), and N-shaped GaN layer ground lead (11) is connected with capacitor bottom crown (10); Capacitor top crown (12) is connected with work TFT grid (13) and control TFT drain electrode (21) respectively, work TFT drain electrode (23) is connected with transparent electrode layer (6), work TFT source electrode (22) is connected with work TFT source lead (24), control TFT source electrode (19) and be connected with control TFT source lead (20), control TFT grid (15) and be connected with control TFT grid lead (16); Insulating barrier (25), between each layer of metal electrode and different layers lead-in wire, has passivation protection layer (26) in controlled area (7) and lead district (8); In transparent electrode layer (6) top, cover phosphor powder layer, above phosphor powder layer, cover supporting color membrane substrates; Or be phosphor powder layer and the color membrane substrates structure that becomes one.
2. blue-light excited TFT-LED array display base plate according to claim 1, is characterized in that: substrate (1) material is sapphire single-crystal substrate or SiC single crystalline substrate.
3. blue-light excited TFT-LED array display base plate according to claim 1, it is characterized in that: N-shaped GaN layer (3) and p-type GaN layer (5) are comprised of p-type or the N-shaped GaN epitaxial film of different levels of doping, wherein N-shaped GaN layer mixes Si, and p-type GaN layer mixes Mg or Zn.
4. blue-light excited TFT-LED array display base plate according to claim 1, is characterized in that: blue light-emitting layer (4) forms light emitting array, and the blue light-emitting layer of each light emitting array (4) is more than one deck.
5. according to claim 1, described blue-light excited TFT-LED array display base plate, is characterized in that: transparent electrode layer (6) is the ITO of growth in situ or IZO; Insulating barrier (25) and passivation protection layer (26) adopt SiO
x, SiN
xor SiO
xn
yinsulating material is made; Work TFT raceway groove (17) and control TFT raceway groove (18) adopt amorphous silicon, polysilicon or monocrystalline silicon; Phosphor powder layer adopts yttrium-aluminium-garnet yellow-green fluorescence powder YAG:Ce
3+or YAG:Ce
3+with SrWO
4: Eu
3+, CaSnO
3: Eu
3+the mixed powder of red fluorescence powder or blue-light excited lower sent light by with blue light colour mixture after obtain the fluorescent material of white light.
6. blue-light excited TFT-LED array display base plate according to claim 1, it is characterized in that: capacitor bottom crown (10), top crown (12), work TFT grid (13), work TFT drain electrode (23), work TFT source electrode (22), the material of control TFT grid (15), control TFT drain electrode (21), controlling TFT source electrode (19) and various lead-in wires is one or more collocation and the combination in Mo, Au, Cu, Ag, Ni or Al, or their alloy, or the collocation of Metal and Alloy and combination.
7. blue-light excited TFT-LED array display base plate according to claim 1, is characterized in that: color membrane substrates comprises red resin, green resin and blue resins.
8. a manufacture method for blue-light excited TFT-LED array display base plate, is characterized in that:
Step 1, on substrate (1) substrate, utilize mocvd method to deposit successively resilient coating (2), N-shaped GaN layer (3);
Step 2, at the upper mocvd method growth blue light-emitting layer (4) that adopts of N-shaped GaN layer (3);
Step 3, at the upper sputtering method that adopts of blue light-emitting layer (4), deposit p-type GaN layer (5);
Step 4, at the upper magnetron sputtering method deposit transparent electrode layer (6) that adopts of p-type GaN layer (5);
Step 5, on the basis of step 4, carry out photoetching and etching, etching depth surpasses blue light-emitting layer (4), but must not carve, wear N-shaped GaN layer (3), the formation control district, region (7) being etched and lead district (8), the formation luminous zone, region (9) not being etched, they form array of display jointly;
Step 6, in controlled area, the upper magnetron sputtering method that adopts of (7) and lead district (8) deposits metal level I, metal level I is carried out to photoetching and etching, make the metal level I of controlled area form capacitor bottom crown (10), make the metal level I of lead district (8) form N-shaped GaN layer ground lead (11);
Step 7, in controlled area, the upper PECVD method that adopts of (7) and lead district (8) deposits insulating barrier (25), then at the upper magnetron sputtering method that adopts of insulating barrier (25), deposit metal level II, metal level II is carried out after photoetching and etching, metal level II on controlled area has formed respectively capacitor top crown (12), the work TFT grid (13) being connected with capacitor top crown (12) and has controlled TFT grid (15), and the metal level II in lead district (8) has formed control TFT grid lead (16);
Step 8, on step 7 basis, adopt PECVD method to deposit insulating barrier (25); Adopt again PECVD method depositing a-Si active layer on insulating barrier (25), and carry out photoetching and etching, form respectively work TFT channel layer (17) and control TFT channel layer (18), in the top insulating barrier (25) of work TFT grid (13) lead terminal, form a via hole, a part of exposing work TFT grid lead (14) end, for controlling TFT drain electrode (21) in next step, be connected with work TFT grid (13), to reach the object of controlling work TFT switch by controlling the switch of TFT;
Step 9, on step 8 basis, adopt magnetron sputtering method to deposit metal level III, metal level III is carried out to photoetching and etching, metal level III on controlled area forms respectively the work TFT drain electrode (23) being connected with transparent electrode layer, work TFT source electrode (22), the control TFT drain electrode (21) being connected with work TFT grid (13) and control TFT source electrode (19), and the control TFT drain electrode (21) being connected with work TFT grid (13) by via hole, and control TFT source electrode (19), metal level III in lead district has formed control TFT source lead (20),
Step 10, adopting PECVD method to deposit insulating barrier (25), and by photoetching and etching, in the insulating barrier (25) at work TFT source electrode (22) top, forming a via hole, so that the TFT source electrode (22) of working is connected with lead wire circuit; Adopt magnetron sputtering method to deposit metal level IV, and carry out photoetching and etching, form the work TFT source lead (24) being connected with work TFT source electrode (22);
Step 11, employing PECVD method deposit passivation protection layer (26), to controlled area (7) and lead district (8) circuit and relevant portion formation protection; Passivation protection layer (26) is carried out to photoetching and etching, form the pad circuit part of substrate, to be connected with external circuit, keep the complete and clean of light-emitting zone simultaneously;
Step 12, in transparent electrode layer (6) top, cover phosphor powder layer, above phosphor powder layer, cover supporting color membrane substrates; Or phosphor powder layer and color membrane substrates are integrated, in the color cell inner side of each color film, apply certain thickness phosphor powder layer, then directly color membrane substrates is covered on transparent electrode layer (6).
9. the manufacture method of blue-light excited TFT-LED array display base plate according to claim 8, is characterized in that: the method that the method for etching adopts wet etching and dry etching to combine.
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|---|---|---|---|
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| CN105467670A (en) * | 2016-02-19 | 2016-04-06 | 京东方科技集团股份有限公司 | Array substrate, display panel and liquid crystal display |
| CN106328638A (en) * | 2016-10-31 | 2017-01-11 | 佛山市中昊光电科技有限公司 | COB light source |
| KR102395993B1 (en) * | 2017-06-05 | 2022-05-11 | 삼성전자주식회사 | Display apparatus |
| CN108987423B (en) | 2017-06-05 | 2023-09-12 | 三星电子株式会社 | display device |
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| CN1438828A (en) * | 2002-02-15 | 2003-08-27 | 伊斯曼柯达公司 | Organic electroluminescent device of electroluminescent unit with lamina |
| JP2005164937A (en) * | 2003-12-02 | 2005-06-23 | Nippon Hoso Kyokai <Nhk> | Image display controller and image display device |
| CN1988196A (en) * | 2005-12-20 | 2007-06-27 | 株式会社半导体能源研究所 | Semiconductor device and its manufacturing method, and display device and electronic appliance |
| CN202363462U (en) * | 2011-11-18 | 2012-08-01 | 贵州大学 | Blue-light excitation TFT-LED array display substrate |
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| KR100698048B1 (en) * | 2003-06-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device |
| KR100830318B1 (en) * | 2007-04-12 | 2008-05-16 | 삼성에스디아이 주식회사 | Light emitting display device and fabrication method for the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438828A (en) * | 2002-02-15 | 2003-08-27 | 伊斯曼柯达公司 | Organic electroluminescent device of electroluminescent unit with lamina |
| JP2005164937A (en) * | 2003-12-02 | 2005-06-23 | Nippon Hoso Kyokai <Nhk> | Image display controller and image display device |
| CN1988196A (en) * | 2005-12-20 | 2007-06-27 | 株式会社半导体能源研究所 | Semiconductor device and its manufacturing method, and display device and electronic appliance |
| CN202363462U (en) * | 2011-11-18 | 2012-08-01 | 贵州大学 | Blue-light excitation TFT-LED array display substrate |
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