CN101887938B - LED chip and manufacturing method thereof - Google Patents
LED chip and manufacturing method thereof Download PDFInfo
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- CN101887938B CN101887938B CN 201010213947 CN201010213947A CN101887938B CN 101887938 B CN101887938 B CN 101887938B CN 201010213947 CN201010213947 CN 201010213947 CN 201010213947 A CN201010213947 A CN 201010213947A CN 101887938 B CN101887938 B CN 101887938B
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Abstract
The invention relates to an LED chip and a manufacturing method thereof. The LED chip comprises a substrate and a luminous epitaxial stack on the substrate, wherein the luminous epitaxial stack sequentially comprises an n-shaped interface layer, a luminous layer on the n-shaped interface layer and a p-shaped interface layer on the luminous layer. The area of the p-shaped interface layer is same as that of the luminous layer and the n-shaped interface layer; the p-shaped interface layer is provided with a p electrode; the back surface of the substrate is provided with an external electrode layer; and the side wall of the n-shaped interface layer is electrically connected with the external electrode layer by a conductive part.
Description
Technical field
The present invention relates to lighting technology, particularly light-emitting diode chip for backlight unit and manufacturing approach thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of solid-state semiconductor device that can electric energy be converted into visible light.Because it has that volume is little, power consumption is low and the advantage of long service life, replace conventional light source gradually and be applied to lighting field more and more widely.
At present, the III-V hi-nitride semiconductor material has been widely used in the manufacturing process of light-emitting diode.With GaN is example, and it grows on the Sapphire Substrate usually.Yet, because sapphire can't remove to change its conductive characteristic through means such as doping originally as insulator.Therefore, need the LED device that grow on the Sapphire Substrate be electrically connected with extraneous formation through electrode.With reference to shown in Figure 1; For example in the one Chinese patent application 200610004656.6, manufacturing method for LED comprises: 1 growing GaN crystallizing layer 2, GaN two dimension smoothing layer 3, n type GaN layer 4, luminescent layer 5 and p type GaN layer 6 successively on the Sapphire Substrate of roughening; P type GaN layer 6 is carried out partial etching to n type GaN layer 4; Forming p electrode 8, n electrode 7 respectively on the p type GaN layer 6 and on the n type GaN layer 4 that is exposed.
The making of p, n electrode is in order to realize ohmic contact, the usefulness of nail line when also can be used as encapsulation on the other hand on the one hand.But, in the method for manufacturing light-emitting of similar above-mentioned one Chinese patent application, p, n electrode be produced in partial etching p type GaN layer and the part n type GaN layer on.This kind method will make the actual light-emitting area of LED device reduce.For remedying this problem, must the size of LED device be done greatly.Thus, can increase material cost and can increase the area of LED device again.
Summary of the invention
The present invention provides a kind of light-emitting diode and manufacturing approach thereof, makes the problem that the light-emitting diode area reduces with the manufacturing approach that solves prior art p, n electrode.
For addressing the above problem, light-emitting diode chip for backlight unit of the present invention comprises: the luminous extension lamination on substrate and the substrate, and said luminous extension lamination comprises successively: n type boundary layer; Luminescent layer on the n type boundary layer; P type boundary layer on the luminescent layer, wherein,
Said p type boundary layer is identical with the area of said luminescent layer, n type boundary layer; Has the p electrode on the said p type boundary layer; The back side of said substrate has the external electrode layer; The sidewall of said n type boundary layer is electrically connected with said external electrode layer through conductive part.
Alternatively, the concentration impurity ion at said n type boundary layer edge is greater than the concentration impurity ion at center.
Correspondingly, the present invention also provides a kind of manufacturing approach of light-emitting diode chip for backlight unit, comprising:
On substrate, form luminous extension lamination, comprise successively: on substrate, form n type boundary layer; On said n type boundary layer, form luminescent layer; On said luminescent layer, form p type boundary layer;
Substrate to having said luminous extension lamination carries out scribing;
Substrate back after the scribing and external electrode layer is bonding, and the sidewall of the n type boundary layer after scribing formation conductive part, said conductive part makes said n type boundary layer be electrically connected with said external electrode layer;
On the p type boundary layer after the scribing, form the p electrode.
Alternatively, the concentration impurity ion at said n type boundary layer edge is greater than the concentration impurity ion at center.
Compared with prior art, above-mentioned light-emitting diode chip for backlight unit and manufacturing approach thereof have the following advantages:
1) make n type boundary layer be electrically connected through conductive part with the external electrode layer; Bear the conducting function of n electrode with the external electrode layer; Thereby the entire area of p type boundary layer and n type boundary layer all is positioned at the luminous zone, has increased the actual light-emitting area of light-emitting diode chip for backlight unit;
2) some manufacturing process and the scribing process of light-emitting diode chip for backlight unit are integrated, thereby need not to adopt etch process, saved manufacturing cost;
3) in the possibility, said n type boundary layer sidewall has than high impurity concentration, makes that the inner CURRENT DISTRIBUTION of light-emitting diode chip for backlight unit is more even, has improved the luminous efficiency of light-emitting diode chip for backlight unit.
Description of drawings
Fig. 1 is the structural representation of accomplishing in a kind of method for manufacturing light-emitting of prior art behind p, the n electrode;
Fig. 2 is a kind of execution mode flow chart of method for manufacturing light-emitting of the present invention;
Fig. 3 to Fig. 8 is a kind of embodiment sketch map of method for manufacturing light-emitting of the present invention.
Embodiment
Inventor of the present invention finds that through the analysis to the prior art method for manufacturing light-emitting prior art all is produced on p, n electrode with one side when the p that makes light-emitting diode, n electrode.For p, n electrode being produced on one side, the area of just having to sacrifice a part of n type boundary layer is to settle the n electrode.Thereby the actual light-emitting area of light-emitting diode reduces.And, settle the part n type boundary layer of n electrode to expose for making, in manufacture process, also need introduce etch process, so also caused the raising of manufacturing cost.
In view of this, inventor of the present invention is electrically connected said n type boundary layer through the conductive part that is formed at n type boundary layer sidewall with the external electrode layer of substrate back, bear the conducting function of n electrode with said external electrode layer.By this kind mode, make p, n electrode be positioned at different facial, and all need not to take each self-corresponding p type, n type boundary layer, so that actual light-emitting area increases.In addition, inventor of the present invention is the scribing process in the chip manufacturing also, makes the sidewall of n type boundary layer expose, and need not as prior art, to adopt etch process.Thereby the cost of making light-emitting diode reduces greatly.
With reference to shown in Figure 2, a kind of execution mode of method for manufacturing LED chip of the present invention comprises:
Step s1 forms luminous extension lamination on substrate, comprise successively: on substrate, form n type boundary layer; On said n type boundary layer, form luminescent layer; On said luminescent layer, form p type boundary layer;
Step s2 forms conductive layer on said luminous extension lamination;
Step s3 carries out scribing to the substrate with said luminous extension lamination and conductive layer;
Step s4, substrate back after the scribing and external electrode layer is bonding;
Step s5, the sidewall of the n type boundary layer after scribing forms conductive part, and said conductive part makes said n type boundary layer be electrically connected with said external electrode layer;
Step s6 forms the p electrode on the conductive layer after the scribing.
Technology below in conjunction with blue light-emitting diode further specifies the execution mode of above-mentioned method for manufacturing light-emitting for example.
With reference to shown in Figure 3, on substrate 100, form resilient coating 200.Said substrate 1 00 can be Sapphire Substrate or silicon carbide substrates.The method that forms said resilient coating 200 can be metal-organic chemical vapor deposition equipment (MOCVD).The material of said resilient coating 200 can be GaN.
Shown in Fig. 4 a, on said resilient coating 200, form n type boundary layer 301.The distribution of concentration impurity ion can be uniformly in the said n type boundary layer 301, perhaps also can be uneven.Shown in Fig. 4 b, in one embodiment, the concentration impurity ion at the edge of said n type boundary layer 301 is greater than the concentration impurity ion at center.
Shown in Fig. 4 c and 4d, the step that forms said concentration impurity ion n type pockety boundary layer 301 can comprise:
At first, on said resilient coating 200, form the first boundary layer 301a.The method that forms the said first boundary layer 301a can be metal-organic chemical vapor deposition equipment, and the material of the said first boundary layer 301a can be GaN.
Then, the said first boundary layer 301a is carried out the n type ion injection first time, form a n type boundary layer 301b.At this moment, the foreign ion of a said n type boundary layer 301b distributes still uniformly, and promptly the concentration impurity ion of margin and center is identical or basic identical.Alternatively, after the said n type ion injection first time, can also carry out annealing in process one time.。
Then, cover a M of mask portion at a said n type boundary layer 301b, the said mask M of portion has hidden the core of a n type boundary layer 301b, only exposes the marginal portion.The said mask M of portion can be soft mask, for example photoresist; Perhaps also can be hard mask, for example silicon nitride hard mask.
Behind the M of coverage mask portion, a said n type boundary layer 301b is proceeded n type ion inject, form final n type boundary layer 301.Alternatively, after the said n type ion injection second time, can also carry out annealing in process one time.
In the said process that the second time, ion injected, because the core of a n type boundary layer 301b has the M of mask portion to hide, thereby the concentration impurity ion of core does not change.And relatively, the marginal portion is because outside being exposed to, after the said ion injection second time, the concentration impurity ion of marginal portion increases.Consequently, the concentration impurity ion of edge and core just presents the distribution like Fig. 4 b.
With reference to shown in Figure 5, on said n type boundary layer 301, form luminescent layer 302.The method that forms said luminescent layer 302 can be metal-organic chemical vapor deposition equipment.The material of said luminescent layer 302 is GaN or InGaN.Particularly, said luminescent layer 302 can be single quantum well (SQW) or MQW (MQW) structure.
Continue with reference to shown in Figure 5, on said luminescent layer 302, form p type boundary layer 303.Forming said p type boundary layer 303 steps can comprise:
At first, on said luminescent layer 302, form the second contact surface layer.The method that forms said second contact surface layer can be metal-organic chemical vapor deposition equipment, and the material of said second contact surface layer can be GaN.
Then, said second contact surface layer is carried out p type ion inject, form p type boundary layer 303.
After forming p type boundary layer 303, the luminous extension lamination 300 of light-emitting diode has just completed, and it comprises successively: n type boundary layer; Luminescent layer on the n type boundary layer; P type boundary layer on the luminescent layer.
With reference to shown in Figure 6, on said luminous extension lamination 300, form conductive layer 400.Specifically, depositing electrically conductive film on said p type boundary layer 303.The material of said conductive film can be Sn
xO
y, SnO for example
2Perhaps also can be other conductive film materials, for example tin indium oxide (ITO), indium zinc oxide (IZO), zinc oxide aluminum (AZO) etc.
After forming conductive layer 400, the substrate 100 with luminous extension lamination 300 and conductive layer 400 is carried out scribing.Said scribing can be adopted traditional mechanical scribing technology, for example adopts the scribing technology of diamond pen or diamond blade; Perhaps, also can adopt laserscribing, for example Ultra-Violet Laser scribing technology; Perhaps, also can adopt water to lead laser (Water Jet Guided Laser) scribing technology.For the quite hard substrate of materials such as sapphire, laser scribing or water are led laserscribing and are had better scribing effect.
With reference to shown in Figure 7, after scribing, luminous extension lamination 300 and conductive layer 400 on the substrate 100 all have area identical.And via scribing, the sidewall of each layer also comes out.
With reference to shown in Figure 8, after scribing, the back side and the metallic plate 500 of substrate 100 is bonding, and said metallic plate 500 is as the external electrode layer of light-emitting diode chip for backlight unit.The back side of said substrate 100 is the opposite face of corresponding said luminous extension lamination on the substrate.
After the back side of substrate 100 is adhered to said metallic plate 500, at each layer sidewall coated with conductive material from substrate 100 to n type boundary layers 301 places.Said electric conducting material can be elargol, aluminium glue or silver-colored aluminium glue.The electric conducting material of said coating is promptly as conductive part 600.
With the elargol is example, and after coating, said n type boundary layer 301 has just been set up with said metallic plate 500 and has been electrically connected.Said metallic plate 500 has then been born the function that external power source is communicated with n type boundary layer 301, has also promptly born the conducting function of n electrode originally.
Continue with reference to shown in Figure 8, after this, on conductive layer 400, form the p electrode.Particularly, definition p electrode zone on said conductive layer 400, and at p electrode zone sputter formation p electrode.
So far, light-emitting diode chip for backlight unit forms, and it comprises: the luminous extension lamination 300 on substrate 100 and the substrate 100, and said luminous extension lamination 300 comprises successively: n type boundary layer 301; Luminescent layer 302 on the n type boundary layer 301; P type boundary layer 303 on the luminescent layer 302, wherein,
Said p type boundary layer 303 is identical with the area of said luminescent layer 302, n type boundary layer 301; Has the p electrode on the said p type boundary layer 303; The back side of said substrate 100 has external electrode layer 500; The sidewall of said n type boundary layer 301 is electrically connected with said external electrode layer 500 through conductive part 600.
When said p electrode and metallic plate 500 were connected to two ends V+, the V-of power supply, p type boundary layer 303 had just been set up with the two ends of said power supply respectively with n type boundary layer 301 and has been electrically connected.Thereby, make the light-emitting diode chip for backlight unit that constitutes by this sandwich construction send blue light.
This shows that the electrode that said light-emitting diode chip for backlight unit is connected with power supply lays respectively at top and bottom, thereby and vacant light-emitting zone, thereby the actual light-emitting area of said light-emitting diode chip for backlight unit is bigger compared to prior art.
And, because the concentration impurity ion at said n type boundary layer 301 edges is greater than the concentration impurity ion at center.Said light-emitting diode chip for backlight unit in Fig. 8 for example is with after power supply is electrically connected, and the CURRENT DISTRIBUTION that concentrates on the p electrode originally relatively also will change at n type boundary layer 301 places to the edge of n type boundary layer 301 to be concentrated.Thereby, make that via the change of this kind CURRENT DISTRIBUTION the inner CURRENT DISTRIBUTION of light-emitting diode chip for backlight unit is more even, improved luminous efficiency.
In addition, need to prove that above-mentioned method for manufacturing light-emitting is only given an example with the technology of blue light-emitting diode, wherein layers of material is also considered glow color and is decided.Those skilled in the art should be able to adjust layers of material according to the difference of the required glow color of light-emitting diode chip for backlight unit; It is red for example needing glow color, and the material of corresponding resilient coating, n type boundary layer, luminescent layer and p type boundary layer just can be adjusted into the material that AlInGaP etc. can produce ruddiness.
More than disclose many aspects of the present invention and execution mode, it will be understood by those skilled in the art that others of the present invention and execution mode.Disclosed many aspects and execution mode just are used to illustrate among the present invention, are not to be to qualification of the present invention, and real protection range of the present invention and spirit should be as the criterion with claims.
Claims (15)
1. light-emitting diode chip for backlight unit comprises: the luminous extension lamination on substrate and the substrate, and said luminous extension lamination comprises successively: n type boundary layer; Luminescent layer on the n type boundary layer; P type boundary layer on the luminescent layer is characterized in that, said p type boundary layer is identical with the area of said luminescent layer, n type boundary layer; Has the p electrode on the said p type boundary layer; The back side of said substrate has the external electrode layer; The sidewall of said n type boundary layer is electrically connected with said external electrode layer through conductive part, and the concentration impurity ion at said n type boundary layer edge is greater than the concentration impurity ion at center.
2. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, has conductive layer on the said p type boundary layer, and said p electrode is positioned on the said conductive layer.
3. light-emitting diode chip for backlight unit as claimed in claim 2 is characterized in that, the material of said conductive layer is SnO
2, a kind of among the ITO, IZO, AZO.
4. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, also has resilient coating between said luminous extension lamination and said substrate.
5. light-emitting diode chip for backlight unit as claimed in claim 4 is characterized in that, said light-emitting diode is a blue light-emitting diode; The material of said resilient coating is GaN; The GaN that the material of said n type boundary layer mixes for the n type; The material of said luminescent layer is GaN or InGaN; The GaN that the material of said p type boundary layer mixes for the p type.
6. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, the material of said conductive part is a kind of in elargol, aluminium glue, the silver-colored aluminium glue.
7. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, said external electrode layer is a metallic plate.
8. the manufacturing approach of a light-emitting diode chip for backlight unit comprises: on substrate, form luminous extension lamination, comprise successively: on substrate, form the n type boundary layer of the concentration impurity ion at edge greater than the concentration impurity ion at center; On said n type boundary layer, form luminescent layer; On said luminescent layer, form p type boundary layer,
It is characterized in that, also comprise:
Substrate to having said luminous extension lamination carries out scribing;
Substrate back after the scribing and external electrode layer is bonding, and the sidewall of the n type boundary layer after scribing formation conductive part, said conductive part makes said n type boundary layer be electrically connected with said external electrode layer;
On the p type boundary layer after the scribing, form the p electrode.
9. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 8 is characterized in that, the concentration impurity ion at formation edge comprises greater than the n type boundary layer of the concentration impurity ion at center on substrate:
On substrate, form first boundary layer;
Said first boundary layer is carried out the n type ion injection first time, form a n type boundary layer;
Shadow mask layer on a n type boundary layer, an and n type boundary layer is proceeded n type ion inject makes the concentration impurity ion at said n type boundary layer edge greater than the concentration impurity ion at center.
10. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 8 is characterized in that, before forming n type boundary layer on the substrate, on substrate, forms resilient coating earlier.
11. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 8 is characterized in that, before scribing, on said luminous extension lamination, forms conductive layer.
12. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 11 is characterized in that, the material of said conductive layer is SnO
2, a kind of among the ITO, IZO, AZO.
13. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 8 is characterized in that, said external electrode layer is a metallic plate;
Substrate back after the scribing and external electrode layer is bonding, and the sidewall of the n type boundary layer after scribing formation conductive part comprises:
Substrate back after the scribing and metallic plate is bonding;
Coated with conductive material on the sidewall to n type boundary layer from substrate.
14. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 13 is characterized in that, said electric conducting material is a kind of in elargol, aluminium glue, the silver-colored aluminium glue.
15. the manufacturing approach of light-emitting diode chip for backlight unit as claimed in claim 8 is characterized in that, said scribing is that mechanical scribing, laser scribing or water are led laser scribing.
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| CN102214649B (en) * | 2011-05-25 | 2013-03-13 | 映瑞光电科技(上海)有限公司 | LED (light-emitting diode) packaging structure and manufacturing method thereof |
| CN103794687B (en) * | 2014-01-28 | 2017-06-06 | 圆融光电科技有限公司 | Gallium nitride based LED preparation method, gallium nitride based LED and chip |
| CN104143598A (en) * | 2014-07-22 | 2014-11-12 | 李媛 | Electrode structure of substrate-free LED chip |
| CN104157767B (en) * | 2014-07-22 | 2017-07-14 | 李媛 | A kind of LED chip electrode structure with non-conductive substrate |
| CN104201269A (en) * | 2014-08-29 | 2014-12-10 | 李媛 | LED (Light Emitting Diode) packaging structure of unilateral electrode chip |
| CN104393137B (en) * | 2014-09-30 | 2017-08-25 | 厦门市三安光电科技有限公司 | A kind of flip-chip light emitting device and preparation method thereof |
| CN105355747A (en) * | 2015-10-28 | 2016-02-24 | 江苏新广联半导体有限公司 | Sapphire-substrate single-electrode LED chip structure and preparation method thereof |
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| JP3274271B2 (en) * | 1994-03-09 | 2002-04-15 | 株式会社東芝 | Semiconductor light emitting device |
| JP3916726B2 (en) * | 1997-05-27 | 2007-05-23 | 星和電機株式会社 | Compound semiconductor light emitting device |
| US20080315240A1 (en) * | 2006-08-31 | 2008-12-25 | Epivalley Co., Ltd. | III-Nitride Semiconductor light Emitting Device |
| KR101327106B1 (en) * | 2007-08-09 | 2013-11-07 | 엘지이노텍 주식회사 | Semiconductor light emitting device |
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