CN104201269A - LED (Light Emitting Diode) packaging structure of unilateral electrode chip - Google Patents

LED (Light Emitting Diode) packaging structure of unilateral electrode chip Download PDF

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Publication number
CN104201269A
CN104201269A CN201410438731.4A CN201410438731A CN104201269A CN 104201269 A CN104201269 A CN 104201269A CN 201410438731 A CN201410438731 A CN 201410438731A CN 104201269 A CN104201269 A CN 104201269A
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chip
semiconductor layer
type semiconductor
electrode
type
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CN201410438731.4A
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Chinese (zh)
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李媛
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The invention provides an LED (Light Emitting Diode) packaging structure of a unilateral electrode chip. The LED packaging structure of the unilateral electrode chip comprises a chip, a conductive substrate of the chip in electric contact with one N-type semiconductor layer or one P-type semiconductor layer, and an other electrode of the chip in electric contact with another P-type semiconductor or another N-type semiconductor layer; the conductive substrate and the other electrode are electrically connected with a conductive base plate respectively; the surfaces on the two sides of the N-type semiconductor layer and the P-type semiconductor layer of the chip are light emitting surfaces of the chip, and the other surfaces located at the lateral sides of the light emitting surfaces are side surfaces of the chip; the other electrode is arranged on one side surface of the chip. As the electrode of the chip is located on one side surface of the chip, line welding is unnecessary on the light emitting surfaces of the chip, light shielding is reduced, and the l luminous efficiency of the LED is improved.

Description

A kind of LED encapsulating structure of single-sided electrode chip
Technical field
The present invention relates to a kind of LED encapsulating structure, especially a kind of LED encapsulating structure that adopts lateral electrode chip.
Background technology
The electric conductivity of pressing substrate is different, existing LED chip is generally divided into non-conductive substrate chip and conductive substrates chip, the former mainly refers to Sapphire Substrate chip, also be formal dress structure chip or bipolar electrode chip, mainly comprise afterwards silicon carbide substrates, silicon substrate and gallium nitride substrate chip etc., be also thin-film LED or single electrode chip.The P type electrode of positive cartridge chip can directly be produced on p type semiconductor layer, but because the Sapphire Substrate of carrying n type semiconductor layer does not have conducting function, when making N-type electrode, need on P type semiconductor face, cut out subregion, until expose n type semiconductor layer, then make N-type electrode on the n type semiconductor layer of this exposure.Chip with 8mil * 7mil size is calculated, and total light-emitting area of chip is 8 * 7=56mil 2, the area of P type electrode is about 3 * 3=9mil 2, the P type semiconductor region of cutting is about 4 * 4=16mil 2, having made the remaining light-emitting area of chip after electrode is 56-9-16=31mil, the utilance of light-emitting area is 31/56 * 100%=55%.Comparatively speaking, because the substrate of thin-film LED can conduct electricity, only need on p type semiconductor layer, make a P type electrode again, light-emitting area utilization increases, but because P type electrode is arranged on exiting surface, has still blocked part light.Visible, existing LED chip all need to be made electrode in light-emitting area, and chip light emitting area is existed to blocking in various degree, cannot use whole light-emitting areas of chip completely, and internal quantum is low.Meanwhile, because a large amount of light is reflected back toward in chip, cause heat accumulation in chip, also accelerated the rate of decay of chip, reduce the useful life of chip.While adopting above-mentioned chip package to be LED, owing to also need to welding gold thread on chip electrode, further increase is blocked chip light emitting, reduces the light emission rate of LED.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of light extraction efficiency high, heat localization is few, the LED encapsulating structure of high life.
The present invention solves the technological means that its technical problem adopts:
A kind of LED encapsulating structure of single-sided electrode chip, comprise chip, the conductive substrates that one of chip and n type semiconductor layer or p type semiconductor layer electrically contact and another electrode electrically contacting with another p type semiconductor layer or n type semiconductor layer, described conductive substrates and described another electrode are electrically connected to electrically-conductive backing plate respectively, it is characterized in that: the exiting surface that the face of the n type semiconductor layer of chip and p type semiconductor layer both sides is chip, the side that its lap that is positioned at exiting surface side is chip; Described another electrode arranges on the side of chip.
The invention has the beneficial effects as follows: because the present invention is arranged on electrode the side of chip, the amount of light of chip sides is significantly smaller than the amount of light of chip sides, the amount of light of LED will be increased greatly, reduce the heat accumulation in LED simultaneously, improve the LED life-span.
As a further improvement on the present invention, the n type semiconductor layer of described conductive substrates and described chip electrically contacts, and described another electrode is the P type electrode electrically contacting with p type semiconductor layer.
As a further improvement on the present invention, the p type semiconductor layer of described conductive substrates and described chip electrically contacts, and described another electrode is the N-type electrode electrically contacting with n type semiconductor layer.
As a further improvement on the present invention, the light-emitting area of described chip is towards described substrate, described conductive substrates is directly welded and is electrically connected to described substrate, and described another electrode is directly welded and is electrically connected to described substrate by lower surface, thereby is conducive to adopt unified welding procedure.
As a further improvement on the present invention, the light-emitting area of described chip is towards described substrate, described conductive substrates is directly welded and is electrically connected to described substrate, and described another electrode is electrically connected to by bonding wire with described substrate by upper surface, thereby is conducive to adopt bonding wire craft.
Accompanying drawing explanation
Fig. 1 is that electrode of the present invention is at the structural representation of chip same side;
Fig. 2 is electrode of the present invention at the chip structural representation of ipsilateral not;
Fig. 3 arranges the structural representation of conductive layer on electrode of the present invention;
Fig. 4 has the structural representation of making lateral electrode on the chip of conductive substrates;
Fig. 5 is without the structural representation of making lateral electrode in substrate chip;
Fig. 6 for without substrate chip only electrode be arranged on the structural representation of side;
Fig. 7 is one of LED encapsulating structure schematic diagram of single electrode chip;
Fig. 8 be single electrode chip LED encapsulating structure schematic diagram two.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.The present invention at least can be implemented on the LED chip with non-conductive substrate, has on the LED chip of conductive substrates and the LED chip at the linerless end.Unless otherwise stated, in those of ordinary skills' ken, the electrode structure of describing on the following chip for a certain type has versatility on the chip of other types.
With reference to figure 1, take that to have the chip structure that non-conductive medium sapphire is substrate be example, be followed successively by from the bottom to top substrate 1, n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4.Chip is cut into hexahedron structure, and the exiting surface 01 that Sapphire Substrate 1 side of chip and the face of p type semiconductor layer 4 both sides are chip is positioned at all the other 4 sides that face is chip 00 that exiting surface 01 side is vertical with exiting surface 01.The most light of chip all sends from exiting surface 01, and chip sides 00 bright dipping is less.For above-mentioned every semi-conductor layer, its face that is positioned at this chip sides 00 also can be referred to as the side of this semiconductor layer.On the side 00 of described chip, be provided with the N-type electrode 5 electrically contacting with n type semiconductor layer 2, N-type electrode 5 sticks to the side 00 of chip, and extend on the stacked direction of each semiconductor layer of chip, electrically contact with the side of n type semiconductor layer 2, adhesion strength for intensifier electrode and chip sides 00, can small part extend on the exiting surface 01 of chip, but main part is still retained in chip sides 00.N-type electrode 5 is cover part semiconductor layer only, also all n type semiconductor layers 2, luminescent layer 3 and p type semiconductor layer 4 can have been covered, when adopting the latter's structure, for avoiding N-type electrode 5 and the side of luminescent layer 3 and p type semiconductor layer 4 to electrically contact formation short circuit, between described N-type electrode 5 and chip sides 00, insulating barrier 51 is set.Described insulating barrier 51 can cover the side of whole n type semiconductor layers 2, luminescent layer 3 and p type semiconductor layer 4, and N-type electrode 5 is electrically connected to by the n type semiconductor layer 2 of exiting surface 01 side; Described insulating barrier 51 also can only cover the side of luminescent layer 3 and p type semiconductor layer 4, and N-type electrode 5 can be electrically connected to by exiting surface 01 side of n type semiconductor layer 2 and/or the side of n type semiconductor layer 2 00.On the same side 00 of chip, also be provided with the P type electrode 6 electrically contacting with p type semiconductor layer 2, P type electrode 6 is similar with N-type electrode 5, difference is, when described P type electrode 6 has covered the semiconductor layer of all chip sides, described insulating barrier 51 can cover the side of whole n type semiconductor layers 2, luminescent layer 3 and p type semiconductor layer 4, and P type electrode 6 is electrically connected to by the p type semiconductor layer 4 of exiting surface 01 side; Described insulating barrier 51 also can only cover the side of luminescent layer 3 and n type semiconductor layer 2, and P type electrode 6 can be electrically connected to by exiting surface 01 side of p type semiconductor layer 4 and/or the side of p type semiconductor layer 4 00.
On described p type semiconductor layer 4, also can be provided with current-diffusion layer 41, at this moment P type electrode 6 can electrically contact with the side of p type semiconductor layer 4 and the side of current-diffusion layer 41 simultaneously, can directly not electrically contact with p type semiconductor layer 4 yet, but electrically contact by current-diffusion layer 41 and p type semiconductor layer 4, electric current enters p type semiconductor layer 4 after spreading by current-diffusion layer 41 again.Equally, also similar current-diffusion layer 21 can be set on n type semiconductor layer 2.For ease of increasing the directivity of chip light emitting or working as the intensity of light-emitting directions, also can or be provided with reflection layer 7 on described n type semiconductor layer 2 or p type semiconductor layer 4 in Sapphire Substrate.
Described N-type electrode 5 and P type electrode 4 can be arranged on the same side 00 of chip, and such chip can adopt the mode of flip chip bonding to encapsulate, thereby save operation and the cost of weldering gold thread, strengthen the heat sinking function of chip simultaneously.Also can be with reference to shown in figure 2, described N-type electrode 2 and P type electrode 4 are separately positioned on the not ipsilateral 00 of chip, wherein lay respectively on relative two sides 00 when two electrodes, and while being positioned at chip diagonal position, it is the most even that electric current flows through luminescent layer 3, and illumination effect is best.Can also only N-type electrode 2 be arranged on to chip sides 00,4, P type electrode is arranged on the exiting surface 01 of chip p type semiconductor layer 4.
With reference to figure 3, described N-type electrode 5 also can be extended out other sides 00 around chip, and the N utmost point conductive layer 52 electrically contacting with the n type semiconductor layer 2 of other sides 00; Described P type electrode 6 also extends other sides 00 around chip, and the P utmost point conductive layer 62 electrically contacting with the p type semiconductor layer 4 of other sides 00.Like this, electric current can flow into from a plurality of sides of p type semiconductor layer 4 equably, from a plurality of sides of n type semiconductor layer 2, flows out, and current spread is better, flow through luminescent layer 3 just more even, thereby chip light emitting is more even.While being also provided with current-diffusion layer 41 on described p type semiconductor layer 4, described P type electrode 6 and P utmost point conductive layer 62 electrically contact with described p type semiconductor layer 4 by described current-diffusion layer 41.Now, electric current enters p type semiconductor layer 4 after spreading by current-diffusion layer 41 again, and CURRENT DISTRIBUTION is more even.While being also provided with current-diffusion layer 21 on described n type semiconductor layer 2, described N-type electrode 5 and N utmost point conductive layer 52 electrically contact with described n type semiconductor layer 2 by described current-diffusion layer 21, and its structure and principle are aforementioned similar.
To thering is the LED chip of conductive substrates, while being carborundum, silicon, zinc oxide or gallium nitride etc. as backing material, because substrate itself has conducting function, so only need to make an electrode, be P type electrode, the side electrode structure of other structures and above-mentioned Sapphire Substrate chip is same or similar.There is the conductive substrates chip structure of lateral electrode as shown in Figure 4, be followed successively by from the bottom to top, conductive substrates 1, n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4, chip cutting is hexahedron structure, the exiting surface 01 that conductive substrates 1 side of chip and the face of p type semiconductor layer 4 both sides are chip, is positioned at all the other 4 sides that face is chip 00 that exiting surface 01 side is vertical with exiting surface 01.P type electrode 6 sticks to the side 00 of chip, and its concrete structure is substantially identical with the aforementioned electrode structure with Sapphire Substrate chip.Difference is that described insulating barrier 51 need to be covered to the side 00 of conductive substrates 1 in order to avoid P type electrode 6 conductive substrates 1 to electrically contact.
As the further improvement with conductive substrates LED chip side electrode structure, also can be as shown in figures 1 and 3, on described p type semiconductor layer 4, also can be provided with current-diffusion layer 41, at this moment P type electrode 6 can electrically contact with the side of p type semiconductor layer 4 and the side of current-diffusion layer 41 simultaneously, can directly not electrically contact with p type semiconductor layer 4 yet, but electrically contact by current-diffusion layer 41 and p type semiconductor layer 4, electric current enters p type semiconductor layer 4 after spreading by current-diffusion layer 41 again.Can be as shown in Figure 1, on described p type semiconductor layer 4, also can be provided with current-diffusion layer 41, at this moment P type electrode 6 can electrically contact with the side of p type semiconductor layer 4 and the side of current-diffusion layer 41 simultaneously, can directly not electrically contact with p type semiconductor layer 4 yet, but electrically contact by current-diffusion layer 41 and p type semiconductor layer 4, electric current enters p type semiconductor layer 4 after spreading by current-diffusion layer 41 again.Also can reflection layer 7 be set in substrate side.
With reference to Fig. 5, for the LED chip of the linerless end of having peeled off substrate, chip does not comprise substrate, chip body structure comprises n type semiconductor layer 2, be laminated in the luminescent layer 3 on n type semiconductor layer 2 and be laminated in the p type semiconductor layer 4 on luminescent layer 3, the exiting surface 01 that the face of n type semiconductor layer 2 and p type semiconductor layer 4 both sides is chip, the side 00 that its lap that is positioned at exiting surface 01 side is chip, the N-type electrode 5 electrically contacting with n type semiconductor layer 2 and the P type electrode 6 electrically contacting with p type semiconductor layer 4, described N-type electrode 5 and P type electrode 6 at least one electrode are arranged on the side 00 of described chip, this is arranged on the N-type electrode 5 of chip sides and/or P type electrode 6 and 00 of chip sides and is provided with insulating barrier 51.It is identical with aforementioned N electrode or the P electrode with Sapphire Substrate chip that this is arranged on the N-type electrode 5 of chip sides and/or P type electrode 6.Difference is owing to there is no substrate on n type semiconductor layer 2, and in the time need to N-type electrode 5 being set on the exiting surface 01 of n type semiconductor layer 2 sides, N-type electrode 5 can be set directly on n type semiconductor layer 2.
Further improvement as LED chip of the linerless end, with reference to figure 1 and Fig. 2, N-type electrode 5 and P type electrode 6 all can be arranged on the side 00 of described chip, be that described N-type electrode 5 and P type electrode 6 are arranged on the same side 00 of chip, or described N-type electrode 5 is separately positioned on the two sides 00 that chip is relative with P type electrode 6.Or only one of P type electrode 6 or N electrode 5 are arranged on the side of described chip 00, another electrode is arranged on corresponding semiconductor layer.As with reference to figure 6, P type electrode 6 is arranged on chip sides, and N-type electrode 5 arranges on n type semiconductor layer 2.Or N-type electrode 5 is arranged on chip sides, P type electrode 6 is arranged on p type semiconductor layer 4.With reference to figure 1 and Fig. 3, described in be arranged on the electrode of chip sides 00 and be also provided with other sides 00 around chip, and the conductive layer electrically contacting with other corresponding semiconductor layers in side 00.On described p type semiconductor layer 4 and/or n type semiconductor layer 2, be also provided with current-diffusion layer 41,21.On described n type semiconductor layer 2 or P semiconductor layer 4, be provided with reflection layer 7.
For thering is conductive substrates chip, can adopt the packaged type with reference to figure 7, include cup f1, cup inwall f11 for by electroplate or polish there is good reflecting effect reflective surface, cup bottom f12 is embedded with electrically-conductive backing plate f2.Electrically-conductive backing plate f2 is for connecting the conductor of chip and LED external power source, and electrically-conductive backing plate f2 is divided into positive and negative polarities, be connected respectively, or both positive and negative polarity electrically-conductive backing plate f2 extends to the outer positive and negative lamp base f3 of formation of cup by conductive pole 21 with the positive and negative lamp base electricity f3 outside cup f1.In cup, also comprise the packing colloid of packaged chip and bonding wire structure.Because chip has conductive substrates 1, when conductive substrates 1 and the n type semiconductor layer 2 of chip electrically contact formation N-type electrode 5, what be arranged on chip sides is the P type electrode 6 electrically contacting with p type semiconductor layer 4; When described conductive substrates 1 and p type semiconductor layer 4 electrically contact, form P type electrode 6, what be arranged on chip sides is exactly the N-type electrode 5 that the n type semiconductor layer 2 with chip electrically contacts.
Take side electrode as P type electrode 6 be example, the LED packaged type with conductive substrates chip specifically can be divided into again two kinds of forms, wherein a kind of with reference to Fig. 7, the light-emitting area of described chip is towards described substrate f2, described conductive substrates 1 is directly welded and is electrically connected to described substrate f2, and P type electrode 6 is directly welded and is electrically connected to described substrate f2 by lower surface f01.Described welding manner can adopt electric welding, can adopt conducting resinl bonding, or after directly both being electrically contacted, adopts the material with adhesive effect to fix again.
Another kind of packaged type is with reference to Fig. 8, and the light-emitting area of described chip is towards described substrate f2, and described conductive substrates 1 is directly welded and is electrically connected to described substrate f2, and 6, P type electrode is electrically connected to by bonding wire f4 with described substrate f2 by upper surface f011.

Claims (5)

1. the LED encapsulating structure of a single-sided electrode chip, comprise chip, the conductive substrates that one of chip and n type semiconductor layer or p type semiconductor layer electrically contact and another electrode electrically contacting with another p type semiconductor layer or n type semiconductor layer, described conductive substrates and described another electrode are electrically connected to electrically-conductive backing plate respectively, it is characterized in that: the exiting surface that the face of the n type semiconductor layer of chip and p type semiconductor layer both sides is chip, the side that its lap that is positioned at exiting surface side is chip; Described another electrode arranges on the side of chip.
2. the LED encapsulating structure of a kind of single-sided electrode chip according to claim 1, is characterized in that: the n type semiconductor layer of described conductive substrates and described chip electrically contacts, and described another electrode is the P type electrode electrically contacting with p type semiconductor layer.
3. the LED encapsulating structure of a kind of single-sided electrode chip according to claim 1, is characterized in that: the p type semiconductor layer of described conductive substrates and described chip electrically contacts, and described another electrode is the N-type electrode electrically contacting with n type semiconductor layer.
4. the LED encapsulating structure of a kind of single-sided electrode chip according to claim 1, it is characterized in that: the light-emitting area of described chip is towards described substrate, described conductive substrates is directly welded and is electrically connected to described substrate, and described another electrode is directly welded and is electrically connected to described substrate by lower surface.
5. the LED encapsulating structure of a kind of single-sided electrode chip according to claim 1, it is characterized in that: the light-emitting area of described chip is towards described substrate, described conductive substrates is directly welded and is electrically connected to described substrate, and described another electrode is electrically connected to by bonding wire with described substrate by upper surface.
CN201410438731.4A 2014-08-29 2014-08-29 LED (Light Emitting Diode) packaging structure of unilateral electrode chip Pending CN104201269A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658288A (en) * 1979-10-17 1981-05-21 Matsushita Electric Ind Co Ltd Semiconductor device
CN1780002A (en) * 2004-11-19 2006-05-31 中国科学院半导体研究所 Production of inverted gallium nitride base light emitting diode chip
US20070262329A1 (en) * 2006-05-12 2007-11-15 Yasuhiro Tada Semiconductor Device and Method for Manufacturing the Same
CN101887938A (en) * 2010-06-29 2010-11-17 张汝京 LED chip and manufacturing method thereof
CN102214623A (en) * 2010-04-07 2011-10-12 精材科技股份有限公司 Chip package and method for forming the same
US20120007120A1 (en) * 2010-07-12 2012-01-12 Hak Hwan Kim Light emitting device and method of manufacturing the same
CN103400916A (en) * 2013-08-21 2013-11-20 深圳市凯信光电有限公司 LED wafer structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658288A (en) * 1979-10-17 1981-05-21 Matsushita Electric Ind Co Ltd Semiconductor device
CN1780002A (en) * 2004-11-19 2006-05-31 中国科学院半导体研究所 Production of inverted gallium nitride base light emitting diode chip
US20070262329A1 (en) * 2006-05-12 2007-11-15 Yasuhiro Tada Semiconductor Device and Method for Manufacturing the Same
CN102214623A (en) * 2010-04-07 2011-10-12 精材科技股份有限公司 Chip package and method for forming the same
CN101887938A (en) * 2010-06-29 2010-11-17 张汝京 LED chip and manufacturing method thereof
US20120007120A1 (en) * 2010-07-12 2012-01-12 Hak Hwan Kim Light emitting device and method of manufacturing the same
CN103400916A (en) * 2013-08-21 2013-11-20 深圳市凯信光电有限公司 LED wafer structure

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Application publication date: 20141210