CN205488192U - Nitride -based flip -chip LED chip - Google Patents
Nitride -based flip -chip LED chip Download PDFInfo
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- CN205488192U CN205488192U CN201620293200.5U CN201620293200U CN205488192U CN 205488192 U CN205488192 U CN 205488192U CN 201620293200 U CN201620293200 U CN 201620293200U CN 205488192 U CN205488192 U CN 205488192U
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- 150000004767 nitrides Chemical class 0.000 title abstract 3
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 168
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 110
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 20
- 239000010980 sapphire Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
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- 238000009413 insulation Methods 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The utility model discloses a nitride -based flip -chip LED chip, it is mirror symmetry's a structure, and the upper surface of following its sapphire substrate makes progress, and the N type gallium nitride layer, multi -quantum well structural layer and the P type gallium nitride layer that are distributing in proper order constitute the epitaxial structure. The upper surface of N type gallium nitride layer exposes two shoulders that first portion and second portion outside the multi -quantum well structural layer formed the epitaxial structure respectively, the metal electrode of three rectangular shape extends each other parallelly, and wherein middle one is the P electrode, its well axis extend who follows the upper surface of P type gallium nitride layer, the both sides branch maybe first, the 2nd N electrode, and they distribute respectively and extend on first, second portion. The utility model discloses a nitride -based flip -chip LED chip adopts mirror symmetry's structure, can guarantee that the current distribution of chip is even through the position of two N electrodes, has the light efficiency height, production process is simple and convenient, advantage that the reliability is high.
Description
Technical field
This utility model relates to LED chip technical field, particularly relates to a kind of GaN-based flip-chip LED chip.
Background technology
The basic structure of galliumnitride base LED chip include Sapphire Substrate, n type gallium nitride (N-GaN) layer,
Multi-quantum pit structure layer (luminescent layer) and p-type gallium nitride (P-GaN) layer.During forward energising, electric current injects many
Quantum well structure layer, electric energy is converted into light, the surface of Sapphire Substrate, the surface of P-GaN layer and LED chip
Side all have light outgoing.
At present, galliumnitride base LED chip has formal dress (as shown in Figure 1) and upside-down mounting (as shown in Figure 2) two kinds
Structure, wherein has reflecting layer between Sapphire Substrate and the N-GaN layer of nitridation gallio packed LED chip, makes
Obtain most light to send from the upper surface (i.e. the surface of P-GaN layer) of chip；GaN-based flip-chip LED core
On the surface of the P-GaN layer of sheet, there is reflecting layer so that (sapphire serves as a contrast most light from the lower surface of chip
The surface at the end) send.Relative to nitridation gallio packed LED chip, GaN-based flip-chip LED chip has more
Low thermal resistance, electric current transmit and evenly, more preferably go out light and without using the advantages such as gold thread, and these advantages determine nitridation
Gallio flip LED chips drives demand side to have significantly in backlight high reliability demand and illumination super-large current
Advantage, it well and can last a long time, so that terminal client can be saved into higher electric current, heat radiation
This.
The reflecting layer arranged is needed and for applying voltage V's on the P-GaN layer of GaN-based flip-chip LED chip
Electrical contact layer, generally has two ways to realize.One class is directly to arrange W metal Ag layer so that it is both conducts
Electrical contact layer on P-GaN layer, again as reflecting layer；Another kind of is (as ITO is thin with transparent conductive film
Film) as the electrical contact layer on P-GaN layer, arrange that dielectric reflection film (DBR) is as anti-the most thereon
Penetrate layer and realize reflective.Based on both the above technology path, the scheme of existing various flip LED chips occurs, its
In typical the most such as: Chinese Patent Application No. is " LED flip chip " of CN201310149879.1, Chinese patent
Application No. CN201310280172.4 " there is flip-chip light emitting diode and the system thereof of Bragg reflecting layer
Preparation Method " and Chinese Patent Application No. be CN201310406608.X " a kind of LED high brightness flip-chip with
And manufacture method " etc.." a kind of LED high brightness flip-chip and manufacture method " therein is under big electric current
Current flow uniformity be difficult to ensure, light efficiency can be affected；And " LED flip chip " and " there is Bragg reflection
Flip-chip light emitting diode of layer and preparation method thereof " in order to make flip-chip CURRENT DISTRIBUTION when large driven current density
Uniformly, P electrode is prepared multiple salient point, then deposits metal connecting layer.Although this scheme can be effective
Solve current distribution uniformity problem, but technique is relative complex, has higher requirements photoetching alignment precision, thus
Manufacturing cost can be increased.
Therefore, those skilled in the art is devoted to develop a kind of GaN-based flip-chip LED chip, it is achieved upside-down mounting
The low cost of chip, specular removal, high reliability.
Utility model content
For achieving the above object, this utility model provides a kind of GaN-based flip-chip LED chip, including transversal
Sapphire Substrate that face is rectangle and the N-type nitrogen being upwards sequentially distributed from the upper surface of described Sapphire Substrate
Changing gallium layer, multi-quantum pit structure layer and p-type gallium nitride layer, described n type gallium nitride layer, described MQW are tied
The cross section of structure layer and described p-type gallium nitride layer is all rectangle, and they constitute epitaxial structure；
It is characterized in that,
Described GaN-based flip-chip LED chip is minute surface symmetrical structure, and the longitudinal section of described epitaxial structure becomes convex
Font；The upper surface of described n type gallium nitride layer has first be exposed to outside described multi-quantum pit structure layer
Point and Part II, described Part I and described Part II form two shoulders of described epitaxial structure respectively；
Described GaN-based flip-chip LED chip also includes the P electricity being distributed in the upper surface of described p-type gallium nitride layer
Pole, the first N electrode being distributed on described Part I and the second N electrode being distributed on described Part II；
Described P electrode electrically connects with described p-type gallium nitride layer, and described first, second N electrode nitrogenizes with described N-type
Gallium layer electrically connects；
Described P electrode is strip, and the axis along the upper surface of described p-type gallium nitride layer extends, from described P
One side edge of the upper surface of type gallium nitride layer extends to another side edge, described p-type gallium nitride layer upper
Described side and another side described on surface are relative to each other；
Described first, second N electrode, all in strip, all nitrogenizes from described N-type with described P electrode abreast
One side edge of the upper surface of gallium layer extends to another side edge, the upper surface of described n type gallium nitride layer
Described side and another side described are relative to each other.
Further, described GaN-based flip-chip LED chip also includes reflecting layer, and described reflecting layer covers described
Part I, described Part II, the upper surface of described p-type gallium nitride layer, described P electrode, a described N
Electrode and described second N electrode.
Further, described reflecting layer is the dielectric reflective layer of insulation.
Further, described reflecting layer is distributed bragg reflector mirror, and described distributed bragg reflector mirror is by handing over
SiO for stacking2Thin film and TiO2Thin film is constituted.
Alternatively, the upper surface of described p-type gallium nitride layer has layer of transparent conductive film, described P electrode shape
Become on described transparent conductive film, and electrically connected with described p-type gallium nitride layer by described transparent conductive film.
Further, described transparent conductive film is ito thin film or ZnO film.
Further, described P electrode contacts with described p-type gallium nitride layer part and described first N electrode
The part contacted with described n type gallium nitride layer with described second N electrode is metal level CrAl or metal level CrAg.
Further, described P electrode, described first N electrode and described second N electrode connect with described reflecting layer
The part touched is metal Cr, Ti, Ni or Al.
Further, described P electrode, described first N electrode and described second N electrode have lead portion,
Corresponding to drawing described in described P electrode, described first N electrode and described second N electrode in described reflecting layer
The position of line part has fairlead.
Further, described P electrode, described first N electrode and described second N electrode all has an institute
State lead portion, described reflecting layer has three described fairleads；Each described fairlead accommodates conduction material
Material.
Further, described reflecting layer having two pads, a described pad is by a described fairlead
Described conductive material electrically connect with described P electrode, another described pad is respectively by drawing described in two other
Described conductive material in string holes is electrically connected with the described lead portion of described first N electrode and described second N electrode
Connect.
In better embodiment of the present utility model, it is provided that a kind of GaN-based flip-chip LED chip, it is
Minute surface symmetrical structure, the upper surface of Sapphire Substrate from which upwards, be sequentially distributed n type gallium nitride layer,
Multi-quantum pit structure layer and p-type gallium nitride layer, this cross section of three layers is rectangle, and they constitute longitudinal section and become
The epitaxial structure of convex shape.The upper surface of p-type gallium nitride layer has layer of transparent conductive film, n type gallium nitride layer
Upper surface be exposed to the Part I outside multi-quantum pit structure layer and Part II forms epitaxial structure respectively
Two shoulders.The metal electrode of three strips extends parallel to each other, and wherein middle one is P electrode, its
Along the axis of the upper surface of p-type gallium nitride layer, extend from a side edge of the upper surface of p-type gallium nitride layer
To another side edge；Both sides are first, second N electrode respectively, and they are respectively distributed to first, second
On Fen, extend to another side edge from a side edge of the upper surface of n type gallium nitride layer.
GaN-based flip-chip LED chip of the present utility model, by design minute surface symmetrical structure, nitrogenizes in p-type
On the axis of the upper surface of gallium layer arrange P electrode, this P electrode lateral symmetry at n type gallium nitride layer
Upper surface on arrange two N electrode, it is possible to be ensured the electric current of chip by the position of two N electrode
It is evenly distributed.It addition, this utility model uses the distributed bragg reflector mirror of insulation as reflecting layer, cover
The upper surface of p-type gallium nitride layer, the upper surface of n type gallium nitride layer be exposed to the part outside multi-quantum pit structure layer,
P electrode and two N electrode, can replace SiO of the prior art2Layer realizes the electrical insulation of device, also can
Prevent the light between P electrode and N electrode gap from spilling, light efficiency more than 10% can be improved relative to prior art,
And Making programme is easy, reliability is high.
Below with reference to accompanying drawing, the technique effect of design of the present utility model, concrete structure and generation is made furtherly
Bright, to be fully understood from the purpose of this utility model, feature and effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the nitridation gallio packed LED chip of prior art, and shown in figure is device
The structure of longitudinal section.
Fig. 2 is the structural representation of the GaN-based flip-chip LED chip of prior art, and shown in figure is device
The structure of longitudinal section.
Fig. 3 shows the GaN-based flip-chip LED chip in a preferred embodiment of the present utility model.
Fig. 4 is the structural representation of the longitudinal section of the GaN-based flip-chip LED chip shown in Fig. 3.
Fig. 5 shows the vertical of the GaN-based flip-chip LED chip in another preferred embodiment of the present utility model
The structure in cross section.
Fig. 6 is the upper schematic diagram of the GaN-based flip-chip LED chip shown in Fig. 3.
Fig. 7 is the one of the longitudinal section of the GaN-based flip-chip LED chip shown in the Fig. 3 after being applied with reflecting layer
Structural representation.
Fig. 8 is the upper schematic diagram of the GaN-based flip-chip LED chip shown in Fig. 7.
Fig. 9 is that the structure of the longitudinal section of the GaN-based flip-chip LED chip shown in the Fig. 7 after being applied with pad is shown
It is intended to.
Figure 10 is the second structural representation of the longitudinal section of GaN-based flip-chip LED chip.
Figure 11 is application IC making technology, makes the showing of multiple GaN-based flip-chip LED chip of formation simultaneously
It is intended to, figure shows two GaN-based flip-chip LED chip.
Figure 12 is the third structural representation of the longitudinal section of GaN-based flip-chip LED chip.
Detailed description of the invention
As it is shown on figure 3, in a preferred embodiment of the present utility model, it is provided that a kind of GaN-based flip-chip
LED chip.This GaN-based flip-chip LED chip includes Sapphire Substrate and from the upper surface of Sapphire Substrate
N type gallium nitride layer, multi-quantum pit structure layer and the p-type gallium nitride layer being upwards sequentially distributed, it is that minute surface is symmetrical
Structure.N type gallium nitride layer, multi-quantum pit structure layer and p-type gallium nitride layer constitute epitaxial structure, this epitaxy junction
Structure be perpendicular to the plane of symmetry of GaN-based flip-chip LED chip longitudinal section (in the application, GaN-based flip-chip LED
Chip, the longitudinal section of epitaxial structure i.e. refer to be perpendicular to the cross section of this plane of symmetry) become convex shape, as shown in Figure 4.
The GaN-based flip-chip LED chip of this structure can be by successively shape in rectangular Sapphire Substrate
Become n type gallium nitride layer, multi-quantum pit structure layer and p-type gallium nitride layer, the most from the top down nitridation of etching p-type
Gallium layer and multi-quantum pit structure layer, until exposing with making n type gallium nitride layer segment.In particular make N-type nitrogen
Two long edge positions changing gallium layer expose a part respectively, are referred to as the upper surface of n type gallium nitride layer in the application
Part I and Part II, these two parts define two shoulders of epitaxial structure.In other words, these two parts exist
It the longitudinal section of epitaxial structure is the middle twice horizontal line section of above-mentioned type.As shown in Figure 4, due at etching P
Type gallium nitride layer and multi-quantum pit structure layer are so that the process that n type gallium nitride layer segment ground exposes may be partly
Etch into n type gallium nitride layer segment, so the n type gallium nitride in the GaN-based flip-chip LED chip after molding
The upper surface of layer is not likely to be continuous print, but middle part (is i.e. covered by multi-quantum pit structure layer as illustrated by figure 3
The part of lid) form protruded.
It is preferred that the Part I of the upper surface of n type gallium nitride layer and the strip that Part II is that two shapes are identical
The rectangle of shape, they extend to relative with this side another from a side of the upper surface of n type gallium nitride layer
One side.
It is described above Part I and the Part II extended along two long limits of n type gallium nitride layer, permissible
Make the n type gallium nitride layer of expose portion respectively at two minor faces of n type gallium nitride layer, i.e. such as Fig. 3 institute simultaneously
As showing.But in other embodiments, it is also possible to make to be not exposed at two minor faces of n type gallium nitride layer
Outside multi-quantum pit structure layer, the Part I that the most only extends along two long limits of n type gallium nitride layer and the
Two are partially exposed at outside multi-quantum pit structure layer.
As in Figure 3-5, GaN-based flip-chip LED chip of the present utility model includes a P electrode 11 and two
Individual N electrode 21,22, it is all metal electrode.Wherein, P electrode 11 is distributed in the upper table of p-type gallium nitride layer
Face, electrically connects to power up to p-type gallium nitride layer with p-type gallium nitride layer；N electrode 21,22 is respectively distributed to N
First, second part of the upper surface of type gallium nitride layer, electrically connects with n type gallium nitride layer with to n type gallium nitride
Layer powers up.Specifically, P electrode 11 is in strip, along the axis of upper surface of p-type gallium nitride layer (in this
Axis is in the aforesaid plane of symmetry) extend, extend to from a side edge of the upper surface of p-type gallium nitride layer
Another side edge relative with this side；N electrode 21,22 is all in strip, all with P electrode 11 abreast
Another side edge relative with this side is extended to from a side edge of the upper surface of n type gallium nitride layer.This
In described extend to another side edge from a side edge, can be the position at place, edge from a side
Extend to the position at the place, edge of another side, it is also possible to be from the edge of a side less than position extend
To another side edge less than position, as shown in Figure 6.Such as, an end of electrode away from
From the position of edge 5 μm of a side, its another end is in the position of edge 5 μm apart from another side
Put.
It is preferred that owing to the electric conductivity of p-type gallium nitride layer is poor, P electrode 11 is not directly and p-type gallium nitride
Layer contact, but be electrically connected with the formation of p-type gallium nitride layer by layer of transparent conductive film.As shown in Figure 5
Second preferred embodiment of the present utility model in GaN-based flip-chip LED chip, its p-type gallium nitride
The upper surface of layer is distributed layer of transparent conductive film, such as ito film or ZnO film.P electrode 11 is distributed in this
On transparent conductive film, and (such as thickness is owing to this layer of transparent conductive film is relatively thin), still may be used
To think that it is the axis of the upper surface along p-type gallium nitride layer, from one of the upper surface of p-type gallium nitride layer
Side edge extends to another side edge relative with this side.Apply transparent conductive film in the present embodiment, can
Effectively to improve CURRENT DISTRIBUTION this defect uneven that p-type gallium nitride layer poorly conductive causes so that be added in P
The electric current of electrode 11 more uniformly can inject multi-quantum pit structure layer by p-type gallium nitride layer, so that chip is whole
Individual light-emitting area is luminous uniformly.
As shown in Figure 6, P electrode 11 and two N electrode 21,22 each have for being electrically connected with external circuit
The lead portion connect, such as lead portion 111, the lead portion 211 and N electricity of N electrode 21 of P electrode 11
The lead portion of pole 22.The live width of P electrode 11 and N electrode 21,22 is about 6～20 μm, these leading parts
Dividing is then from P electrode 11 and the abducent part of N electrode 21,22, lead portion 111 as shown in Figure 6
Being the diameter circle that is about 30 μm, the lead portion of lead portion 211 and N electrode 22 is that diameter is about 30 μm
Semicircle.Owing to P electrode 11 and N electrode 21,22 are thinner linear structures, by they partly to
External expansion, they can be more easily connected by the lead portion forming each of which with external circuit.Correspondingly,
May be also required at the Part I of the upper surface of the n type gallium nitride layer at these lead portion places and Part II
Outward expansion, to adapt to the existence of these lead portion.Such as, as shown in Figure 6, in order to adapt to lead portion
211, sidewall 1a inwardly (i.e. away from the direction of N electrode 21) can be made partly to cave in, form recess 1a1.
Sidewall 1a, the 1b so with recess can be at aforesaid etching p-type gallium nitride layer and MQWs from the top down
Structure sheaf is to realize in the step of partially exposed n type gallium nitride layer.
As it is shown in fig. 7, GaN-based flip-chip LED chip of the present utility model also includes one layer of reflecting layer 30, should
Reflecting layer 30 covers the Part I and outside the upper surface of n type gallium nitride layer is exposed to multi-quantum pit structure layer
Two parts, the upper surface of p-type gallium nitride layer, P electrode 11, N electrode 21,22, and the most also cover P
Each side of type gallium nitride layer and multi-quantum pit structure layer, i.e. covers the part of such as sidewall 1a, 1b.More excellent
Selection of land, also covering n type gallium nitride layer (as shown in Figure 10), or even Sapphire Substrate (as shown in figure 12)
Each side, so that GaN-based flip-chip LED chip only goes out light from Sapphire Substrate face.Wherein shown in Figure 10
Structure be that application IC making technology makes GaN-based flip-chip LED chip of the present utility model on a large scale and is prone to obtain
, it implements step and will be described later.Structure shown in Figure 12 is then to make this reality of single one
The structure being easily obtained during by novel GaN-based flip-chip LED chip.
Fig. 7 is illustrated that the GaN-based flip-chip LED chip to having structure shown in Fig. 4 applies reflecting layer 30
After structure, i.e. to the GaN-based flip-chip LED chip not arranging transparent conductive film on p-type gallium nitride layer
Apply the structure behind reflecting layer 30；For the GaN-based flip-chip LED chip of structure shown in Fig. 5, i.e. to P
There is on type gallium nitride layer the GaN-based flip-chip LED chip of transparent conductive film and apply as reflecting layer 30 is also
, it is not repeated herein.
The reflecting layer 30 used in this utility model is the dielectric reflective layer of insulation, preferably uses distributed Bradley
Lattice reflecting mirror (DBR, distributed Bragg reflection), this distributed bragg reflector mirror is by alternately laminated
SiO2Thin film and TiO2Thin film is constituted.Therefore, reflecting layer 30 is also used as P electrode 11 and N electrode
21, the insulating protective layer of 22.
Owing to P electrode 11 is distributed between p-type gallium nitride layer and reflecting layer 30, N electrode 21,22 is distributed in
Between n type gallium nitride layer and reflecting layer 30, in order to realize the good contact between each electrode and each layer, P electrode
11, N electrode 21,22 all uses the metal of stacking to constitute, and wherein, P electrode 11 contacts with p-type gallium nitride layer
Part and the part that contacts with n type gallium nitride layer of N electrode 21,22 be metal level CrAl (CrAl herein
Representing double layer of metal, the most respectively Cr and Al, metal level herein represents the most by this way) or
Metal level CrAg, it is preferred that the thickness of Cr typically existsThe thickness of Al or Ag exists
Further, the part that P electrode 11, N electrode 21,22 contact with reflecting layer 30 is metal Cr, Ti, Ni or Al.
That is, P electrode 11, N electrode 21,22 can be metal level CrAlCr, CrAlTi, CrAlNi, CrAl, CrAgCr,
The structures such as CrAgTi, CrAgNi or CrAgAl.
In order to P electrode 11 and two N electrode 21,22 are drawn from reflecting layer 30, right in reflecting layer 30
The position answering the lead portion of P electrode 11, N electrode 21,22 has fairlead, goes between in this utility model
Hole is the through hole in up/down perforation reflecting layer 30, and the lower limb of through hole falls in corresponding lead portion, through hole big
The little lead portion being generally less than correspondence.As shown in Figure 8,9, reflecting layer 30 has three fairleads 301,
302,303, wherein fairlead 301 corresponds to lead portion 111 corresponding to lead portion 211, fairlead 303,
Fairlead 302 is corresponding to the lead portion of N electrode 22.In this example, the horizontal stroke of fairlead 301,302,303
Cross section is circular, and diameter is less than the lead portion of its correspondence.
Thus, each electrode can be drawn by each fairlead, as Fig. 9,10,12 show P electricity
The example that pole 11 is drawn from reflecting layer 30.In this example, GaN-based flip-chip LED chip has for inciting somebody to action
The pad that electrode is drawn, such as pad 403.The material of pad 403 is metal, and it is distributed on reflecting layer 30,
Having conductive material in fairlead 303, pad 403 is realized and leading part by the conductive material in fairlead 303
Divide 111 electrical connections.In this example, the metal with the identical material of pad 403 is used to insert lead-in wire as conductive material
Hole 303, the metal part one end in this fairlead 303 contacts with lead portion 111, the other end and pad 403
Contact.In actual fabrication, in fairlead, filler metal and deposition are that a step is complete for making the metal level of pad
Become.Make pad N electrode 21,22 drawn from reflecting layer 30 similarly, it is preferred that make one
Pad electrically connects with the two electrode simultaneously.
GaN-based flip-chip LED chip described above is the structure of one single chip, during actual fabrication,
Application IC making technology, makes multiple such GaN-based flip-chip in full wafer Sapphire Substrate simultaneously often
LED chip, obtains the GaN-based flip-chip LED chip of multiple separation finally by scribing.It specifically made
Journey is briefly described as follows:
The first step, is sequentially depositing n type gallium nitride layer, multi-quantum pit structure layer and p-type nitrogen on a sapphire substrate
Change gallium layer, this so-called " epitaxial wafer growth ".
Then, photoetching, etching n type gallium nitride layer, multi-quantum pit structure layer and p-type gallium nitride layer, such as make
With ICP, from the top down etching p-type gallium nitride layer, multi-quantum pit structure layer and n type gallium nitride layer, until blue
The upper surface of gem substrate, to form a series of discrete epitaxial structure, each epitaxial structure is for forming a nitrogen
Change gallio flip LED chips, as shown in figure 11.Groove between each epitaxial structure that etching is formed is as drawing
Film trap, so when scribing, sliver, will not be damaged to p-type gallium nitride layer/multi-quantum pit structure layer/N-type nitridation
Gallium Rotating fields part, thus avoids causing the damage of chip.
Second step, the upper surface in the structure formed through the first step deposits layer of transparent conductive film, and etching should
Transparent conductive film so that it is exist only in the upper surface of p-type gallium nitride layer, this layer of transparent conductive film can be
ITO, ZnO, the mode of deposition can be evaporation or sputtering.
3rd step, photoetching, etching transparent conductive film, p-type gallium nitride layer and multi-quantum pit structure layer so that N
Type gallium nitride layer is partially exposed, to form the epitaxial structure of longitudinal section one-tenth convex shape.Wherein it is possible to employing wet method
Corrosion transparent conductive film uses dry method (such as ICP) etching p-type gallium nitride layer and multi-quantum pit structure layer then；
Can also be only with the above-mentioned three-decker of dry etching.
4th step, annealing so that transparent conductive film forms low-resistance Ohm contact with p-type gallium nitride layer, and makes
The light transmittance of transparent conductive film is higher.
5th step, deposits such as CrAlCr, CrAlTi, CrAlNi, CrAl, CrAgCr, CrAgTi, CrAgNi
Or the metal level of CrAgAl etc., make P electrode 11, N electrode 21,22.It is preferred that employing metal-stripping
Mode make these electrodes.
6th step, the upper surface in the structure formed through the 5th step alternately deposits SiO2Thin film and TiO2Thin film,
Form distributed bragg reflector mirror, as reflecting layer 30.Such as Figure 10, shown in 11, this reflecting layer 30 covers
The upper surface of n type gallium nitride layer is exposed to the Part I outside multi-quantum pit structure layer and Part II, P
The upper surface of type gallium nitride layer, P electrode 11, N electrode 21,22, and cover p-type gallium nitride layer, many
Each side of quantum well structure layer and n type gallium nitride layer.
7th step, photoetching, etching reflecting layer 30, form fairlead wherein.
8th step, deposits metal on reflecting layer 30, forms pad.
9th step, grinds, polishes scribing, sliver after Sapphire Substrate, it is thus achieved that multiple discrete GaN-based flip-chips
LED chip.
Need the Sapphire Substrate of size, shape with a piece of cutting into, make single one nitridation of the present utility model
(as shown in figure 12, it is capable of reflecting layer 30 is covered each of Sapphire Substrate gallio flip LED chips
Individual side) processing step be similar with above-mentioned processing step, be not repeated herein.
Preferred embodiment of the present utility model described in detail above.Should be appreciated that the ordinary skill of this area
Personnel just can make many modifications and variations according to design of the present utility model without creative work.Therefore, all
Those skilled in the art pass through logical analysis on the basis of existing technology, push away according to design of the present utility model
Reason or the limited available technical scheme of experiment, all should be at the protection domain being defined in the patent claims
In.
Claims (10)
1. a GaN-based flip-chip LED chip, the Sapphire Substrate being rectangle including cross section and from institute
State n type gallium nitride layer, multi-quantum pit structure layer and p-type nitrogen that the upper surface of Sapphire Substrate is upwards sequentially distributed
Change gallium layer；Described n type gallium nitride layer, described multi-quantum pit structure layer and the cross section of described p-type gallium nitride layer
All being rectangle, they constitute epitaxial structure；
It is characterized in that,
Described GaN-based flip-chip LED chip is minute surface symmetrical structure, and the longitudinal section of described epitaxial structure becomes convex
Font；The upper surface of described n type gallium nitride layer has first be exposed to outside described multi-quantum pit structure layer
Point and Part II, described Part I and described Part II form two shoulders of described epitaxial structure respectively；
Described GaN-based flip-chip LED chip also includes the P electricity being distributed in the upper surface of described p-type gallium nitride layer
Pole, the first N electrode being distributed on described Part I and the second N electrode being distributed on described Part II；
Described P electrode electrically connects with described p-type gallium nitride layer, and described first, second N electrode nitrogenizes with described N-type
Gallium layer electrically connects；
Described P electrode is strip, and the axis along the upper surface of described p-type gallium nitride layer extends, from described P
One side edge of the upper surface of type gallium nitride layer extends to another side edge, described p-type gallium nitride layer upper
Described side and another side described on surface are relative to each other；
Described first, second N electrode, all in strip, all nitrogenizes from described N-type with described P electrode abreast
One side edge of the upper surface of gallium layer extends to another side edge, the upper surface of described n type gallium nitride layer
Described side and another side described are relative to each other.
2. GaN-based flip-chip LED chip as claimed in claim 1, wherein said GaN-based flip-chip LED
Chip also includes reflecting layer, and described reflecting layer covers described Part I, described Part II, described p-type nitrogen
Change the upper surface of gallium layer, described P electrode, described first N electrode and described second N electrode.
3. GaN-based flip-chip LED chip as claimed in claim 2, wherein said reflecting layer is Jie of insulation
Matter reflecting layer.
4. GaN-based flip-chip LED chip as claimed in claim 3, wherein said reflecting layer is distributed cloth
Glug reflecting mirror, described distributed bragg reflector mirror is by alternately laminated SiO2Thin film and TiO2Thin film is constituted.
5. the GaN-based flip-chip LED chip as described in any one in claim 2, wherein said p-type nitrogen
The upper surface changing gallium layer has layer of transparent conductive film, and described P electrode is formed on described transparent conductive film,
And electrically connected with described p-type gallium nitride layer by described transparent conductive film.
6. GaN-based flip-chip LED chip as claimed in claim 5, wherein said transparent conductive film is ITO
Thin film or ZnO film.
7. the GaN-based flip-chip LED chip as described in any one in claim 2-5, wherein said P electricity
Part that pole contacts with described p-type gallium nitride layer and described first N electrode and described second N electrode are with described
The part of n type gallium nitride layer contact is metal level CrAl or metal level CrAg.
8. GaN-based flip-chip LED chip as claimed in claim 7, wherein said P electrode, described first
The part that N electrode contacts with described reflecting layer with described second N electrode is metal Cr, Ti, Ni or Al.
9. the GaN-based flip-chip LED chip as described in claim 2 or 5, wherein said P electrode, described
In first N electrode and described second N electrode, there is lead portion, corresponding to described P electricity in described reflecting layer
The position of the described lead portion of pole, described first N electrode and described second N electrode has fairlead.
10. GaN-based flip-chip LED chip as claimed in claim 9, wherein said P electrode, described the
In one N electrode and described second N electrode, all there is a described lead portion, described reflecting layer has three
Described fairlead；Each described fairlead accommodates conductive material.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265872A (en) * | 2019-06-18 | 2019-09-20 | 威科赛乐微电子股份有限公司 | A kind of bottom emissive type VCSEL chip and its manufacturing method |
| CN110265875A (en) * | 2019-05-29 | 2019-09-20 | 威科赛乐微电子股份有限公司 | GaN type VCSEL chip that can be emitted white light and preparation method thereof |
| CN110931610A (en) * | 2019-05-08 | 2020-03-27 | 深圳第三代半导体研究院 | Front-mounted integrated unit diode chip |
| CN111048638A (en) * | 2019-04-25 | 2020-04-21 | 深圳第三代半导体研究院 | Vertical integrated unit diode chip |
| CN113644176A (en) * | 2021-07-29 | 2021-11-12 | 厦门三安光电有限公司 | LED chip |
-
2016
- 2016-04-07 CN CN201620293200.5U patent/CN205488192U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048638A (en) * | 2019-04-25 | 2020-04-21 | 深圳第三代半导体研究院 | Vertical integrated unit diode chip |
| CN110931610A (en) * | 2019-05-08 | 2020-03-27 | 深圳第三代半导体研究院 | Front-mounted integrated unit diode chip |
| CN110265875A (en) * | 2019-05-29 | 2019-09-20 | 威科赛乐微电子股份有限公司 | GaN type VCSEL chip that can be emitted white light and preparation method thereof |
| CN110265872A (en) * | 2019-06-18 | 2019-09-20 | 威科赛乐微电子股份有限公司 | A kind of bottom emissive type VCSEL chip and its manufacturing method |
| CN113644176A (en) * | 2021-07-29 | 2021-11-12 | 厦门三安光电有限公司 | LED chip |
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Effective date of registration: 20200904 Address after: 315336 2nd floor, building 2, No. 68, Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province Patentee after: Ningbo Yifeng Photoelectric Technology Co.,Ltd. Address before: 518048, room 26, floor 2611, Shenzhen International Chamber of Commerce, Xinzhou Road, Shenzhen, Guangdong, Futian District Patentee before: SHENZHEN TIANRUIHE TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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