CN103367610A - High-voltage LED chip and production method thereof - Google Patents
High-voltage LED chip and production method thereof Download PDFInfo
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- CN103367610A CN103367610A CN2012100871910A CN201210087191A CN103367610A CN 103367610 A CN103367610 A CN 103367610A CN 2012100871910 A CN2012100871910 A CN 2012100871910A CN 201210087191 A CN201210087191 A CN 201210087191A CN 103367610 A CN103367610 A CN 103367610A
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Abstract
The invention provides a high-voltage LED chip and a production method thereof. The chip comprises a substrate. A buffer layer, an n-type nitride layer, a luminescent layer and a p-type nitride layer are in order formed on the substrate; a plurality of grooves are etched on the p-type nitride layer, and the grooves extends vertically to the n-type nitride layer; a portion of a bottom of the grooves is etched with a groove to form microcrystalline arranged at intervals, and the groove extends vertically to the substrate; a passivation layer is formed between the groove and an adjacent microcrystalline sidewall, and a current diffusion layer is formed on the p-type nitride layer of the microcrystalline; a conducting layer for connecting the groove bottom and the adjacent microcrystalline current diffusion layer covers the passivation layer, and a phosphor layer is formed on the current diffusion layer and between the adjacent microcrystallines. In the invention, the phosphor layer with even concentration and thickness and smooth surface is coated on the surface of the high-voltage LED chip, so that the uniformity of the high-voltage LED chip emitting light is guaranteed and the light emitting effect of the high-voltage LED chip is improved.
Description
Technical field
The invention belongs to semiconductor applications, relate in particular to a kind of high-voltage LED chip and preparation method thereof.
Background technology
At present on the LED general lighting market, what generally use is traditional DC LED(direct-current LED) chip, the DC led chip is generally worked under large current low voltage, be booster tension and the needed luminous flux of satisfied illumination, general employing COB (integration packaging) structure, i.e. multiple chips connection in series-parallel.The HV LED(high-voltage LED that occurs subsequently) then just realized the connection in series-parallel of micromeritics in chip-scale, the chip-scale connection in series-parallel has following advantage: the consistency problem that the one, HV LED has avoided COB structure medium wavelength, voltage, brightness span to bring; The 2nd, HV LED realizes that easily encapsulation finished product operating voltage near civil power, has improved the conversion efficiency of driving power because self operating voltage is high, because operating current is low, its line loss in finished product is used also will be starkly lower than traditional DC led chip; The 3rd, reduced die bond and the bonding quantity of chip, be conducive to reduce the cost of encapsulation; Therefore HV LED has wide prospect of the application in illumination market.
Now white light LEDs generally adopts blue-light LED chip to add that yellow fluorescent powder makes, because the size of HV led chip is larger, tens of extremely crystallites of up to a hundred are arranged on it, in order to guarantee that the white light that whole HV LED sends is uniform, the blue light that requires epitaxial wafer to send is uniformly, reaches the gold-tinted that fluorescent material sends on every crystallite and also wants evenly.
The present inventor finds, traditional dosing technology, namely utilize and manually or automatically put silica gel or the epoxy resin that the glue instrument will mix fluorescent material and be coated on chip surface, exist significantly not enough: the one, phosphor powder layer in uneven thickness, thick middle, the thin edge balling-up is crown, the middle gold-tinted that transforms by fluorescent material is obviously more than the marginal portion, so that the white light irregular colour that the HV led chip sends is even, local appearance is Huang or partially blue inhomogeneous hot spot partially, has affected the light effect that goes out of HV LED.The 2nd, no matter be manual or automatically dropping glue, all chip point glue one by one is difficult to the accurately some glue amount of each chip of control, and this just causes the chip colour temperature of the same glue of marking words and phrases for special attention all different, so that the consistency of HV led chip is bad, limited applying of HV LED.
Summary of the invention
The present invention provides a kind of high-voltage LED chip and preparation method thereof for improving the light effect that of HV led chip.
The invention provides a kind of high-voltage LED chip, comprise substrate, the resilient coating, N-shaped nitride layer, luminescent layer and the p-type nitride layer that form successively on the substrate are etched with a plurality of grooves on the described p-type nitride layer, and the degree of depth of described groove is to the N-shaped nitride layer; The subregion of described bottom portion of groove is etched with groove to form spaced crystallite, and the degree of depth of described groove is to substrate; The sidewall of described groove and adjacent crystallite is provided with passivation layer, is formed with current-diffusion layer on the p-type nitride layer of described crystallite; Be coated with the conductive layer of connecting groove bottom and adjacent crystallite current-diffusion layer on the described passivation layer, be coated with phosphor powder layer on the described current-diffusion layer and between the adjacent crystallite.
The present invention also provides a kind of preparation method of high-voltage LED chip, said method comprising the steps of:
Provide substrate, successively grown buffer layer, N-shaped nitride layer, luminescent layer and p-type nitride layer on substrate;
The a plurality of grooves of etching on the p-type nitride layer, the degree of depth of described groove is to the N-shaped nitride layer;
At the subregion of described bottom portion of groove etching groove, the degree of depth of described groove forms spaced crystallite thus to substrate;
Sidewall at described groove and adjacent crystallite forms passivation layer;
P-type nitride layer at described crystallite forms current-diffusion layer;
Be formed for the conductive layer of connecting groove bottom and adjacent crystallite current-diffusion layer;
Form phosphor powder layer at chip surface.
Beneficial effect of the present invention: by apply the phosphor powder layer of one deck concentration and even thickness, surfacing at the high-voltage LED chip surface, so that the light that the light of outgoing is changed behind phosphor powder layer on the high-voltage LED chip surface almost is identical, thereby guarantee the uniformity of high-voltage LED chip light-emitting, improved the light effect that of high-voltage LED chip.
Description of drawings
Fig. 1 is epitaxial slice structure schematic diagram among the embodiment of the invention HV led chip preparation method;
Fig. 2 is the structural representation that embodiment of the invention HV led chip forms groove;
Fig. 3 is the structural representation that embodiment of the invention HV led chip forms groove;
Fig. 4 is the structural representation that embodiment of the invention HV led chip forms passivation layer;
Fig. 5 is the structural representation that embodiment of the invention HV led chip forms current-diffusion layer;
Fig. 6 is the structural representation that embodiment of the invention HV led chip forms conductive layer;
Fig. 7 is the structural representation that embodiment of the invention HV led chip forms phosphor powder layer;
Fig. 8 is the structural representation that embodiment of the invention HV led chip forms protective layer;
Fig. 9 is the structural representation that embodiment of the invention HV led chip forms metal level.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Such as Fig. 5, shown in Figure 7, the invention provides a kind of high-voltage LED chip, comprise substrate 1, the resilient coating 2, N-shaped nitride layer 3, luminescent layer 4 and the p-type nitride layer 5 that form successively on the substrate 1, be etched with a plurality of grooves 11 on the described p-type nitride layer 5, the degree of depth of described groove 11 is to N-shaped nitride layer 3; The subregion of described groove 11 bottoms is etched with groove 12 to form spaced crystallite, and the degree of depth of described groove 12 is to substrate 1; The sidewall of described groove 12 and adjacent crystallite is provided with passivation layer 13, is formed with current-diffusion layer 6 on the p-type nitride layer 5 of described crystallite; Be coated with the conductive layer 14 of connecting groove 11 bottoms and adjacent crystallite current-diffusion layer 6 on the described passivation layer 13, be coated with phosphor powder layer 7 on the described current-diffusion layer 6 and between the adjacent crystallite.
In the embodiment of the invention, substrate is selected nonconducting substrate, such as Sapphire Substrate or AlN substrate.Described N-shaped nitride layer 3 can be N-shaped GaN, and p-type nitride layer 5 can be p-type GaN.
As shown in Figure 8, be formed with protective layer 8 on the phosphor powder layer 7, its role is to protect phosphor powder layer 7, and improve the translucent effect of HV led chip.In the present embodiment, the material of described protective layer 8 is silica gel, and the thickness of protective layer 8 is 1 ~ 3um.
As shown in Figure 9, the bottom of substrate 1 is provided with metal level 9, and the effect of described metal level 9 mainly contains two: the one, and the light that sends by reflection HV led chip improves the external quantum efficiency of chip, thereby further improves the light effect that of HV led chip; The 2nd, the heat-sinking capability of enhancing chip.Consider the eutectic Welding that will cooperate follow-up encapsulated phase to adopt, the fusing point of metal level 9 selected materials need be higher than the eutectic point of eutectic wlding material.Therefore, in the present invention, the material of described metal level 9 adopts Ag or Al.
The present invention also provides a kind of preparation method of high-voltage LED chip, said method comprising the steps of:
S101, provide substrate, successively grown buffer layer, N-shaped nitride layer, luminescent layer and p-type nitride layer on substrate;
S102, on the p-type nitride layer a plurality of grooves of etching, the degree of depth of described groove is to the N-shaped nitride layer;
S103, at the subregion of described bottom portion of groove etching groove, the degree of depth of described groove forms spaced crystallite thus to substrate;
S104, form passivation layer at the sidewall of described groove and adjacent crystallite;
S105, form current-diffusion layer at the p-type nitride layer of described crystallite;
S106, be formed for the conductive layer of connecting groove bottom and adjacent crystallite current-diffusion layer;
S107, form phosphor powder layer at chip surface.
Elaborate structure and the preparation method of high-voltage LED chip of the present invention below in conjunction with accompanying drawing:
Step S101 as shown in Figure 1, provides substrate 1, adopts MOCVD(metallo-organic compound chemical vapour deposition technique) sequentially deposition forms resilient coating 2, N-shaped nitride layer 3, luminescent layer 4 and p-type nitride layer 5 on substrate 1.Substrate 1 can adopt AlN substrate, Sapphire Substrate etc.In implementation, described N-shaped nitride layer 3 can be N-shaped GaN, and p-type nitride layer 5 can be p-type GaN.
Step S102 as shown in Figure 2, utilizes photoetching and ICP(inductively coupled plasma) a plurality of grooves 11 of technology etching on p-type nitride layer 5, the degree of depth of groove 11 is to N-shaped nitride layer 3.
In implementation, but etching is tens of to hundreds of grooves 11 on every HV led chip.
Step S103 as shown in Figure 3, utilizes photoetching and ICP technology at the subregion etching groove 12 of described groove 11 bottoms, and namely the width of groove 12 is less than the width of groove 11.The degree of depth of groove 12 forms spaced crystallite thus to substrate 1.
Step S104 as shown in Figure 4, particularly, utilizes first PECVD(plasma enhanced chemical vapor deposition method) technology is at HV led chip surface deposition one deck passivation layer 13, and the material of passivation layer 13 is SiO
2Or SiN, use again corrosive liquid etching passivation layer, passivation layer 13 is only covered on the sidewall of groove 12 and adjacent crystallite.
Step S105, as shown in Figure 5, particularly, first at HV led chip surface deposition current-diffusion layer 6, the material of current-diffusion layer 6 can adopt the ITO(tin indium oxide), ZnO:In (mixing indium zinc oxide), ZnO:Ga (gallium-doped zinc oxide), ZnO:Al (Al-Doped ZnO) or In
2O
3-ZnO(indium oxide zinc oxide mixture); Use again the current-diffusion layer 6 on etching liquid etched recesses 11 and the groove 12, until expose N-shaped nitride layer 3 and passivation layer 13, finally only keep the current-diffusion layer 6 on the crystallite p-type nitride layer 5.
Step S106 as shown in Figure 6, is formed for the conductive layer 14 of connecting groove 11 bottoms and adjacent crystallite current-diffusion layer 6, and its effect is the N-shaped nitride layer 3(negative pole that makes a crystallite) anodal with the current-diffusion layer 6(of adjacent crystallite) be electrically connected.Particularly, carry out first photoetching process, form conductive layer pattern between required crystallite, carry out conductive layer deposition again, the material of described conductive layer is Au, Cr, Pt, in order to improve the adhesive force of Au and chip, needs first sequential aggradation Cr layer, Pt layer, deposits the Au layer again; Then adopt metal lift-off techniques, remove required conductive layer pattern outer Au layer, Pt layer and Cr layer, the final conductive layer 14 that connects the crystallite both positive and negative polarity that forms.In this step, also finish the making of chip electrode when forming conductive layer 14, described chip electrode comprises P electrode 21 and N electrode 22.
Described conductive layer 14 covers on the passivation layer 13, and passivation layer 13 can prevent the conductive layer 14 and luminescent layer 4 and 3 conductings of N-shaped nitride layer between crystallite, so that electric current flows to the positive pole of adjacent crystallite from the negative pole of a crystallite.
Step S107, as shown in Figure 7, form phosphor powder layer 7 at chip surface, particularly, fluorescent material is evenly mixed with silica gel or epoxy resin, utilize the methods such as spin coating, silk screen printing or spraying that the mixture of fluorescent material and silica gel or epoxy resin is coated on HV led chip surface, cover in the groove 11 between crystallite surface and the crystallite, form even thickness, the phosphor powder layer 7 of surfacing.Like this, because it is even to directly overlay phosphor powder layer 7 concentration on HV led chip surface, even thickness, the light that the light of outgoing is changed behind phosphor powder layer 7 on the chip surface almost is identical, thereby guarantee that the HV led chip goes out uniformity of light, helps to improve the light effect that of HV led chip.
Preferably, also comprise before the described step S107: apply one deck tackifier at chip surface, to improve the adhesive force of phosphor powder layer 7 and chip surface, make phosphor powder layer 7 be difficult for breaking away from from chip surface because of the reason such as be heated.Described tackifier are silane coupling agent or HMDS(HMDS).
Preferably, as shown in Figure 8, also comprise behind the described step S107: on phosphor powder layer 7, form protective layer 8, its role is to protect phosphor powder layer 7, and improve the translucent effect of HV led chip.
In implementation, the material of described protective layer 8 can adopt silica gel, and the thickness of protective layer 8 is 1 ~ 3um.Particularly, can adopt spin coating, the methods such as dip-coating method or spraying are made protective layer 8.
Further, as shown in Figure 9, also comprise step S108 after the described step S107: form a metal level 9 in the bottom of substrate 1.The effect of described metal level 9 mainly contains two: the one, and the light that sends by reflection HV led chip improves the external quantum efficiency of chip, thereby further improves the light effect that of HV led chip; The 2nd, the heat-sinking capability of enhancing chip.
Consider the eutectic Welding that will cooperate follow-up encapsulated phase to adopt, the fusing point of metal level 9 selected materials need be higher than the eutectic point of eutectic wlding material.Therefore, in the present invention, the material of described metal level 9 is Ag or Al, makes metal level 9 by the method for electron beam evaporation plating in the bottom of substrate 1.
Before step S108, also can grind attenuate to the substrate 1 of chip, the thickness that makes chip is 110 ~ 150um.
So far, the preparation method of high-voltage LED chip provided by the invention has finished the FEOL of chip, can proceed the last part technology of chip, comprises cutting, bursts apart, and expands crystalline substance, and point is surveyed, and the links such as sorting are finished the making of whole chip.
In sum, the present invention is by applying the phosphor powder layer of one deck concentration and even thickness, surfacing at the high-voltage LED chip surface, so that the light that the light of outgoing is changed behind phosphor powder layer on the high-voltage LED chip surface almost is identical, thereby guarantee the uniformity of high-voltage LED chip light-emitting, improved the light effect that of high-voltage LED chip.
And the present invention forms a metal level in the bottom of substrate, and the light that sends by reflection HV led chip improves the external quantum efficiency of chip, thereby the light effect that goes out of HV led chip is further enhanced.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a high-voltage LED chip comprises substrate, and the resilient coating, N-shaped nitride layer, luminescent layer and the p-type nitride layer that form successively on the substrate is characterized in that be etched with a plurality of grooves on the described p-type nitride layer, the degree of depth of described groove is to the N-shaped nitride layer; The subregion of described bottom portion of groove is etched with groove to form spaced crystallite, and the degree of depth of described groove is to substrate; The sidewall of described groove and adjacent crystallite is provided with passivation layer, is formed with current-diffusion layer on the p-type nitride layer of described crystallite; Be coated with the conductive layer of connecting groove bottom and adjacent crystallite current-diffusion layer on the described passivation layer, be coated with phosphor powder layer on the described current-diffusion layer and between the adjacent crystallite.
2. a kind of high-voltage LED chip as claimed in claim 1 is characterized in that the bottom of described substrate is provided with metal level.
3. a kind of high-voltage LED chip as claimed in claim 2 is characterized in that, the material of described metal level is Ag or Al.
4. a kind of high-voltage LED chip as claimed in claim 1 is characterized in that described phosphor powder layer is provided with protective layer.
5. a kind of high-voltage LED chip as claimed in claim 1 is characterized in that, the material of described passivation layer is SiO
2Or SiN.
6. a kind of high-voltage LED chip as claimed in claim 1 is characterized in that, described substrate is Sapphire Substrate or AlN substrate.
7. the preparation method of a high-voltage LED chip is characterized in that, said method comprising the steps of:
Provide substrate, successively grown buffer layer, N-shaped nitride layer, luminescent layer and p-type nitride layer on substrate;
The a plurality of grooves of etching on the p-type nitride layer, the degree of depth of described groove is to the N-shaped nitride layer;
At the subregion of described bottom portion of groove etching groove, the degree of depth of described groove forms spaced crystallite thus to substrate;
Sidewall at described groove and adjacent crystallite forms passivation layer;
P-type nitride layer at described crystallite forms current-diffusion layer;
Be formed for the conductive layer of connecting groove bottom and adjacent crystallite current-diffusion layer;
Form phosphor powder layer at chip surface.
8. the preparation method of a kind of high-voltage LED chip as claimed in claim 7 is characterized in that, also comprises: form a metal level in the bottom of described substrate.
9. the preparation method of a kind of high-voltage LED chip as claimed in claim 7 is characterized in that, also comprises: form before the phosphor powder layer, apply one deck tackifier at chip surface.
10. the preparation method of a kind of high-voltage LED chip as claimed in claim 7 is characterized in that, also comprises: form protective layer on phosphor powder layer.
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| CN104425663A (en) * | 2013-08-29 | 2015-03-18 | 无锡华润华晶微电子有限公司 | Manufacturing method of gallium nitride-based high-voltage light emitting diode |
| CN104766914A (en) * | 2015-04-20 | 2015-07-08 | 电子科技大学 | High-lighting-rate high-voltage LED chip structure |
| CN105679886A (en) * | 2016-01-20 | 2016-06-15 | 杨秀静 | Manufacturing method of light-emitting diode |
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Application publication date: 20131023 |