CN102339913A - High-voltage LED (Light Emitting Diode) device and manufacturing method thereof - Google Patents
High-voltage LED (Light Emitting Diode) device and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a manufacturing method of a high-voltage LED (Light Emitting Diode) device, which comprises the following steps of: providing a substrate, and sequentially forming an N-type limit layer, an epitaxial layer and a reflecting layer on the substrate; manufacturing at least one isolation trench on the substrate so as to isolate at least two regions on the substrate, and manufacturing a plurality of uniformly-distributed N-type through holes in each region; depositing insulation layers on the inner surfaces, except for bottoms, of the N-type through holes and the isolation trench and the surface of a part of reflection layer; depositing metal to form conductive bolts in the N-type through holes, forming a positive electrode conductive bump on the exposed partial reflection layer, and forming negative electrode conductive bumps which are connected with the conductive bolts in the single region, so as to form LED modules; and packaging one or more LED module(s) and a functional chip to form a high-voltage LED device. The invention also provides the high-voltage LED device, and the problems of current density local crowding effect and heat dissipation of a power-type chip are solved.
Description
Technical field
The invention belongs to luminescent device and make the field, relate in particular to a kind of high-voltage LED device and manufacturing approach thereof.
Background technology
Along with high brightness LED (the Light Emitting Diode that with the nitride is the basis; The exploitation of LED) using; New generation of green environmental protection solid light source nitride LED has become the emphasis of research, is the exploitation of the blue led of representative with third generation semiconductor gallium nitride (GaN) especially.With gallium nitride (GaN), InGaN (InGaN) and aluminium gallium nitride alloy (AlGaN) alloy is that master's III hi-nitride semiconductor material has characteristics such as wide direct band gap, interior external quantum efficiency height, high heat conductance, high temperature resistant, anticorrosive, shock resistance, high strength and high rigidity, is the ideal material of making the high brightness luminescent device at present.
Traditional LED forms P type contact structures on Sapphire Substrate GaN structure; This structure is to avoid light to take out and the deposition current diffusion layer from the low P type GaN layer top of conductance; But the current-diffusion layer thickness can limit the ability that light extraction efficiency and big electric current are spread respectively, and the heat of pn knot derives through the low Sapphire Substrate of thermal conductivity coefficient and go, and thermally conductive pathways is long, thermal resistance is big; In addition, the P electrode also can block part light with lead-in wire and get into device package.So, flip-chip (Flip chip) structure is proposed, in this structure; Light needn't pass through current-diffusion layer and directly take out from Sapphire Substrate, and therefore, lighttight current-diffusion layer can increase current density and reverberation simultaneously through thickening; And the heat of pn knot is directly led to thermal conductivity coefficient high silicon substrate or aluminium nitride ceramics substrate through metal salient point; Thermally conductive pathways is short, thermal resistance is little, good heat dissipation effect, and; Between pn knot and P electrode, increased the reflector layer that is in the light that can eliminate electrode and lead-in wire, therefore this structure has the more excellent characteristics in aspect such as electricity, light, heat.
But, along with the application of high-power LED illumination industry is fast-developing, often need be several or tens, even up to a hundred LED use that is together in series or parallel, to prepare the high-voltage LED device.The high-voltage LED device key of this structure is many with lead-in wire, cost is high, area is big, and at big circuit down owing to the generation of auger recombination, the current density part is easy to generate crowding effect, the decline of LED light efficiency straight line.Because under same power output, though the high-voltage LED device is lower than the needed drive current of low-voltage LED device, LED light efficiency under low current is very high.
Existing is example with a kind of general high-voltage LED device making technics, referring to Fig. 1, on substrate 10, deposits N type limiting layer 12, multiple quantum well active layer 14 and P type limiting layer 16 successively; Then; On described N limiting layer 12 and described P type limiting layer 16, make N electrode 18 and P electrode 20, form a LED, then through plated metal; A plurality of LED are carried out on the plate wafer directly adorn (Chip On Board; COB) encapsulation is bonded in described a plurality of LED on the substrate through the metal connecting line 22 that is provided with on the electrode, forms a plurality of LED series connection and/or parallel connection; Form the high-voltage LED device therefore, hope to solve the problems referred to above through series connection and/or the parallel connection formation high-voltage LED structure of using low-power LED.But; Because the power density of high-power LED chip is very high, power is very big, and heating is very severe; Only through simple series connection of low-power LED and/or parallel connection; Through Flip chip technology preparation high-voltage LED, still can not save the step of the solid crystalline substance of chip, gold thread bonding, therefore again; Can not reduce area and eliminate being in the light of electrode and lead-in wire, can not reduce the chip self-resistance, can not solve area excessive and the current density local congestion effect of generation and the heat dissipation problem of high-power LED chip simultaneously effectively.Therefore, the heat dissipation problem of current density local congestion effect and power-type chip has become the serious bottleneck of restriction high-voltage LED.So, still need the hot system to device be optimized design at aspects such as structure and materials, addressing the above problem, and then the miniaturization that realizes the LED package dimension is with integrated, the reliability of raising device.
In order to address the above problem; Can when realizing III group-III nitride high-voltage LED device, directly on the led chip internal structure, make the integrated manufacturing of the high-voltage LED structure that can reduce current density local congestion effect; Adopt Flip chip technology that wafer on the enterprising andante of substrate of integrated pottery that is inverted in the band interconnect architecture of high-voltage LED structure and functional chip or silicon substrate is directly adorned then, can dispersed high-voltage LED device to prepare big electric current.But; In the implementation process of reality, still there is sizable barrier; Demand introducing the new method that effectively to improve above-mentioned defective urgently, use making the high-voltage LED device but can not solving the problem of the integrated and encapsulation technology of current density local congestion effect of facing to solve third generation semi-conducting material.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacturing approach that realizes the high-voltage LED device, to solve the heat dissipation problem of current density local congestion effect and power-type chip.
For addressing the above problem, the invention provides a kind of manufacturing approach of high-voltage LED device, comprise the steps: to provide a substrate, on said substrate, form N type limiting layer, epitaxial loayer and reflector successively; Make the isolated groove that at least one runs through reflector, epitaxial loayer, N type limiting layer, above substrate, to isolate at least two zones, in each said zone, make a plurality of equally distributed N type through holes, said N type through hole runs through reflector, epitaxial loayer; First depositing insulating layer on the inner surface of N type through hole and isolated groove and surface, reflector is removed the surperficial partial insulative layer in bottom and reflector of N type through hole and isolated groove again, exposes the bottom and the partially reflecting layer of N type through hole and isolated groove; Plated metal in N type through hole, to form conductive plugs, forms the positive electrode conductive projection, and forms the negative electrode conductive projection that connects all conductive plugs in the single zone, thereby forms led module on the partially reflecting layer that exposes; One or more above-mentioned led modules and functional chip are encapsulated, to form the high-voltage LED device.
According to a further aspect in the invention; A kind of high-voltage LED device has also been proposed; Comprise substrate, functional chip and also comprise at least one led module; The surface of said substrate is provided with metal line, and said each led module advances to comprise at least two LED, and said each LED has negative electrode conductive projection and positive electrode conductive projection; Wherein, said led module and functional chip are welded on the metal line on the substrate through the salient point solder-ball flip.
This shows; Do not changing the LED epitaxial structure and effectively utilizing under the prerequisite of led chip self structure characteristic; In the N electrode process that forms each LED,, then, in N type through hole, form conductive plugs through adopting the through hole technology to prepare the N type through hole that can reduce the current density local effect; And form the negative electrode conductive projection that connects all conductive plugs in the single zone and on the reflector that exposes, form the positive electrode conductive projection; Then, led module is welded on the metal line on the substrate through the salient point solder-ball flip, accomplishes the integrated manufacturing of high-voltage LED device.Therefore, the local big electric current that produces among each LED can be evenly dispersed through the through hole that exists, therefore; Solved the problem of current density local congestion effect; Electric current through after the through hole dispersion also reduces in local pyrexia thereupon, has solved the heat dissipation problem of high-voltage LED device simultaneously.In addition; The negative electrode conductive projection of each LED in the said led module and positive electrode conductive projection can directly be welded in the metal line on the substrate through the salient point solder-ball flip; Said functional chip can also be welded in the metal line on the substrate through the salient point solder-ball flip; All omitted the chip step of crystalline substance, gold thread bonding admittedly significantly, therefore, reduced area and eliminated being in the light of electrode and lead-in wire; And self-resistance also reduces thereupon in the chip body, has also further improved the heat dissipation problem of high-voltage LED device.
Description of drawings
Fig. 1 is the structural representation of high-voltage LED device of the prior art.
Fig. 2 a to Fig. 2 h is the manufacturing approach of the high-voltage LED device of one embodiment of the invention.
Fig. 2 i is the structural representation that covers the high-voltage LED device of fluorescent powder silica gel in one embodiment of the invention.
Fig. 2 j is the structural representation that covers the substrate of fluorescent powder silica gel in one embodiment of the invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual manufacturing, should comprise in addition, length, width and the degree of depth.
Referring to Fig. 2 f; The present invention proposes a kind of high-voltage LED device, comprise led module (said led module is made up of substrate 100, nitride nucleating layer 102, N type limiting layer 104, epitaxial loayer 111, reflector 112, isolated groove 114, insulating barrier 118, conductive plugs 120, negative electrode conductive projection 122, positive electrode conductive projection 124), functional chip (not shown) and substrate 2 '.A high-voltage LED device 3 ' comprises at least one led module; Can comprise several according to actual needs or tens even up to a hundred led modules (be example with a led module only in the Figure of description, the actual requirement as according to the high-voltage LED device can also comprise the led module more than 2 or 2); Said each led module comprises that at least (led module in the Figure of description comprises 3 LED to two LED; So LED is identified as L1, L2, L3 respectively, the sign of LED is similar in other led modules, as comprising 4 LED in other led modules; LED in then said other led modules is identified as L1, L2, L3, L4 respectively, does not give unnecessary details one by one at this).Said each LED comprises conductive plugs 120, negative electrode conductive projection 122 and positive electrode conductive projection 124; And realize N type limiting layer 104 to be connected with negative electrode conductive projection 122 through said conductive plugs 120, voltage evenly is added to P type limiting layer 110 and realizes being electrically connected with positive electrode conductive projection 124 via reflector 112.When included led module quantity increased, said functional chip number also can increase thereupon.Said functional chip comprises led drive circuit and esd protection circuit at least.Said substrate 2 ' can be pottery or silicon substrate chip on board, and said substrate 2 ' is provided with metal line, and said led module all is connected with substrate 2 ' through the metal line on the substrate 2 ' with said functional chip.
Be example with a kind of high-voltage LED device shown in Fig. 2 f below; In conjunction with accompanying drawing 2a to 2h; The manufacturing approach that only has a high-voltage LED device of a led module with manufacturing is that example is described in detail, yet those skilled in the art should know how this method is applied to make the high-voltage LED device blocks with a plurality of led modules.Described method comprises the steps:
S100 a: substrate is provided, on said substrate, forms N type limiting layer, epitaxial loayer and reflector successively.
Referring to Fig. 2 a, a substrate 100 is provided, on said substrate 100, form N type limiting layer 104, epitaxial loayer 111 and reflector 112 from the bottom to top successively.
Said epitaxial loayer 111 comprises multiple quantum well active layer 106, P type nitride layer 108, the P type limiting layer 110 that is formed at successively on the said N type limiting layer 104.
More excellent, before forming N type limiting layer 104 on the said substrate 100, on said substrate 100, form nitride nucleating layer 102.
Wherein, said N type limiting layer 104 can be a N type nitride layer, and said P type limiting layer 110 can be a P type nitride layer.
The material of making said reflector 112 is nickel gold (Ni/Au) alloy or other metals, and thickness is that
is so that subsequent technique is made the P electrode of LED.
S101: make the isolated groove that at least one runs through reflector, epitaxial loayer, N type limiting layer; Above substrate, to isolate at least two zones; In each said zone, make a plurality of equally distributed N type through holes, said N type through hole runs through reflector, epitaxial loayer.
Referring to Fig. 2 b; At first, adopt inductively coupled plasma engraving method (Inductively Coupled Plasma Etcher, ICP) at least one isolated groove 114 of preparation on substrate 100; And said isolated groove 114 runs through reflector 112, epitaxial loayer 111 and N type limiting layer 104; Expose the surface of substrate 100, and the part on the substrate 100 is divided into a plurality of zones, so that subsequent technique prepares N type through hole 116.
If after forming said substrate 100; On substrate 100, deposited nitride nucleating layer 102; When then on substrate 100, preparing isolated groove 114, said isolated groove runs through after reflector 112, epitaxial loayer 111, the N type limiting layer 104, also need continue nitride etching nucleating layer 102.
Then; Adopt the through hole technology on said each regional substrate 100, to prepare a plurality of equally distributed N type through holes 116; Said through hole 116 runs through reflector 112 and epitaxial loayer 111 and stops on the surface of N type limiting layer 104; So that in N type through hole 116, carry out the negative electrode conductive projection that subsequent technique prepares LED, the width dimensions (CD) of said N type through hole 116 is 1～50um (micron).
Certainly; Said through hole 116 also can run through reflector 112 with epitaxial loayer 111 and extend into N type limiting layer 104 and (promptly etch away the N type nitride nucleating layer 104 of segment thickness; Shown in Fig. 2 b); So that in N type through hole 116, carry out the negative electrode conductive projection that subsequent technique prepares LED, can realize the object of the invention equally.
S102: first depositing insulating layer on the inner surface of N type through hole and isolated groove and surface, reflector; Remove the partial insulative layer on the bottom and the surface, reflector of N type through hole and isolated groove again, expose the bottom and the partially reflecting layer of N type through hole and isolated groove.
Referring to Fig. 2 c, at first, go up depositing insulating layer 118 on the inner surface (comprising sidewall and bottom) and 112 surfaces, reflector of said N type through hole 116 and said isolated groove 114.Then; The photoresist of deposition patternization and be mask on insulating barrier 118 with patterned photoresist; The lip-deep partial insulative layer 118 in bottom and reflector of etching vias 116 and isolated groove 114 in said each zone; Exposing the bottom and the partially reflecting layer 112 of N type through hole 116 and isolated groove 114, for example can be to close on isolated groove 114 in each zone and near the partially reflecting layer of this edges of regions.At last, remove photoresist.Referring to Fig. 2 d; This is the vertical view of Fig. 2 c; Structure by Fig. 2 d is visible; This structure can be in order to constituting the led module that subsequent technique is made, and the LED regional 3 on the substrate 2 ' that needs in number, shape and position and the subsequent technique of included through hole 116, isolated groove 114 and the partially reflecting layer 112 that exposes among Fig. 2 d " structure is corresponding one by one.
Said insulating barrier 118 is silicon dioxide (SiO2) or other materials, and thickness is
More excellent, the position of etched partial insulative layer 118 in said each zone will be selected consistent with shape.But; The expression that position and the shape of said etched partial insulative layer 118 in each zone is not limited to this legend; The requirement that also can will realize according to the high-voltage LED device; To wanting etched partial insulative layer 118 carry out the selection and the adjusting of position and shape in each zone, forming the said reflector that exposes 112, and be used for the positive electrode conductive projection that subsequent technique prepares LED.
S103: plated metal in N type through hole, to form conductive plugs, forms the positive electrode conductive projection, and forms the negative electrode conductive projection that connects all conductive plugs in the single zone, thereby forms led module on the partially reflecting layer that exposes.
Referring to Fig. 2 e; Adopt lift-off technology (lift off technology), plated metal in the N type through hole 116 in said each zone, on the insulating barrier 118 between the through hole 116 and said reflector that exposes 112 constitutes conductive plugs 120, negative electrode conductive projection 122, positive electrode conductive projection 124 respectively; Form 3 LED; Said 3 LED are identified as L1, L2 and L3 respectively, and 3 LED have constituted led module jointly through preparation on same said substrate 100.
Owing to adopted lift off technology; Conductive plugs 120 once forms with negative electrode conductive projection 122 and positive electrode conductive projection 124 in said each zone; And realized N type limiting layer 104 to be electrically connected with negative electrode conductive projection 122 through conductive plugs 120, voltage evenly is added to P type limiting layer 110 and realizes being connected with positive electrode conductive projection 124 through reflector 112.This shows; The technology that not only forms LED is simple, and since the probability of happening of auger recombination be directly proportional with 3 powers of carrier density, so the big electric current that each LED fully can be according to actual needs controls passing through the quantity of through hole 116 evenly disperses; And then can reduce the generation of auger recombination; Carry out the optimization of properties of product, eliminated current density local congestion effect, effectively the problem of the decline of the LED light efficiency straight line under the big electric current of suppression device.
S104: one or more above-mentioned led modules and functional chip are encapsulated, to form the high-voltage LED device.
Referring to Fig. 2 f; Said substrate 2 ' is provided with metal line; So that said led module and said functional chip (not shown) are all realized welding through metal line on the substrate 2 ' and substrate 2 '; And cover guaranteeing reliability with resin, and form the salient point soldered ball synchronously, and then form high-voltage LED device 3 '.
Referring to Fig. 2 g, said substrate 2 ' can be the pottery or the silicon substrate chip on board of band interconnect architecture.Said substrate 2 ' can be divided into the LED zone 3 that is used for the bonding LED module " and the functional area (not shown) of key function chip.Said LED zone can be divided into a plurality of region D again
i(D
1, D
2..., D
i, the number of i is more than or equal to the LED number, and the LED number in the present embodiment is 3), in described each region D
iIn comprise substrate first electrode 126 and a plurality of substrate second electrodes 128, said each region D
iIn number and the conduction among said each LED of substrate second electrode 128 to fasten 120 numbers identical.
Then, referring to Fig. 2 h, in described each region D
iIn substrate first electrode 126 on cover the first metal layer 130 (also can be in said each region D
iIn substrate first electrode on do not cover the first metal layer), in described each region D
iIn a plurality of substrates second electrode 128 on cover second metal level 132, through described second metal level 132 so that described a plurality of substrate second electrode 128 is interconnected each other, thereby form the substrate 2 ' of band interconnect architecture.Then, in that first metal line 134 (also can directly on substrate first electrode, first metal line be set) is set on the said the first metal layer 130, on said second metal level 132, second metal line 136 is set.Therefore, the positive electrode conductive projection 124 of said each LED is through first metal line 134 and said each region D
iIn substrate first electrode 126 connect, the negative electrode conductive projection 122 of said each LED is through second metal line 136 and said each region D
iIn substrate second electrode 128 connect, form the salient point soldered ball synchronously on the positive electrode conductive projection 124 of each LED and the negative electrode conductive projection 122 during welding, and be welded on the substrate 2 ' of band interconnect architecture through the salient point soldered ball.
In like manner; Said functional area on the said substrate 2 ' comprises that number can be one substrate first electrode 126 and substrate second electrode 128; On substrate first electrode 126 in said functional area and substrate second electrode 128 first metal line and second metal line can be set directly respectively; Also can on first electrode 126 of the substrate in the said functional area and substrate second electrode 128, cover the first metal layer and second metal level respectively as required, and then on said the first metal layer and said second metal level, first metal line and second metal line are set respectively.Said each functional chip is connected with substrate second electrode 128 with substrate first electrode 126 in said each functional area through said first metal line and said second metal line; On functional chip, also form the salient point soldered ball during welding synchronously, and be welded on the substrate 2 ' of band interconnect architecture through the salient point soldered ball.
When loading power, each LED on said each led module isolates through isolated groove 114 on electricity fully.
Because led module adopts the through hole technology, and can through the control of number of through-holes, the big electric current in part be disperseed according to the requirement of actual high-voltage LED device, local pyrexia reduces thereupon, has solved the heat dissipation problem of current density local congestion effect.Simultaneously; Led module and functional chip utilization flip chip technology have directly omitted the chip step of crystalline substance, gold thread bonding admittedly, have reduced area and have eliminated being in the light of electrode and lead-in wire; And self-resistance also reduces thereupon in the chip body, has also further improved the heat dissipation problem of high-voltage LED device.
More excellent, on said led module, apply fluorescent powder silica gel 138 (referring to Fig. 2 i and 2j), prepare the high-voltage LED device that can adapt to different demands.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (18)
1. the manufacturing approach of a high-voltage LED device comprises the steps:
One substrate is provided, on said substrate, forms N type limiting layer, epitaxial loayer and reflector successively;
Make the isolated groove that at least one runs through reflector, epitaxial loayer, N type limiting layer, above substrate, to isolate at least two zones, in each said zone, make a plurality of equally distributed N type through holes, said N type through hole runs through reflector, epitaxial loayer;
First depositing insulating layer on the inner surface of N type through hole and isolated groove and surface, reflector is removed the surperficial partial insulative layer in bottom and reflector of N type through hole and isolated groove again, exposes the bottom and the partially reflecting layer of N type through hole and isolated groove;
Plated metal in N type through hole, to form conductive plugs, forms the positive electrode conductive projection, and forms the negative electrode conductive projection that connects all conductive plugs in the single zone, thereby forms led module on the partially reflecting layer that exposes;
One or more above-mentioned led modules and functional chip are encapsulated, to form the high-voltage LED device.
2. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: before forming N type limiting layer on the said substrate, also comprise: on said substrate, form the nitride nucleating layer.
3. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: said epitaxial loayer comprises multiple quantum well active layer, P type nitride layer, the P type limiting layer that is formed at successively on the said N type limiting layer.
4. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: said N type through hole runs through reflector, epitaxial loayer and extends in the part N type limiting layer.
5. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: said basic N type limiting layer is a N type nitride layer.
6. the manufacturing approach of high-voltage LED device according to claim 3 is characterized in that: said P type limiting layer is a P type nitride layer.
7. high-voltage LED device according to claim 1 is characterized in that: said conductive plugs is connected N type limiting layer with the negative electrode conductive projection.
8. the manufacturing approach of high-voltage LED device according to claim 1; It is characterized in that: the material in said reflector is the nickel billon, and thickness is
9. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: the width dimensions of said N type through hole is 1～50 micron.
10. the manufacturing approach of high-voltage LED device according to claim 1; It is characterized in that: said insulating barrier is a silicon dioxide, and thickness is
11. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: each corresponding LED in said zone, carry out the isolation fully on the electricity through isolated groove between each LED on the said led module.
12. the manufacturing approach of high-voltage LED device according to claim 1 is characterized in that: adopt on the plate wafer directly to adorn encapsulation technology said one or more led modules and functional chip are encapsulated.
13. the manufacturing approach of high-voltage LED device according to claim 12 is characterized in that: said wafer is directly adorned encapsulation technology and is used pottery or silicon substrate chip on board as substrate.
14. the manufacturing approach of high-voltage LED device according to claim 13 is characterized in that: said substrate is an interconnect architecture.
15. the manufacturing approach of the high-voltage LED device of stating according to claim 13 is characterized in that: have metal line on the surface of institute's substrate.
16. high-voltage LED device according to claim 1 is characterized in that: form after the high-voltage LED device, also comprise: on said high-voltage LED device, apply fluorescent powder silica gel.
17. high-voltage LED device according to claim 1 is characterized in that: said functional chip comprises that at least LED drives function and esd protection circuit function.
18. a high-voltage LED device that utilizes the manufacturing approach formation of the described high-voltage LED device of claim 1 comprises:
Substrate, its surface is provided with metal line; And
Functional chip;
Said high-voltage LED device also comprises:
At least one led module, each led module further comprises at least two LED, each said LED has negative electrode conductive projection and positive electrode conductive projection; Wherein,
Said led module and functional chip are welded on the metal line on the substrate through the salient point solder-ball flip.
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