CN102339913B - High-voltage LED (Light Emitting Diode) device and manufacturing method thereof - Google Patents
High-voltage LED (Light Emitting Diode) device and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a manufacturing method of a high-voltage LED (Light Emitting Diode) device, which comprises the following steps of: providing a substrate, and sequentially forming an N-type limit layer, an epitaxial layer and a reflecting layer on the substrate; manufacturing at least one isolation trench on the substrate so as to isolate at least two regions on the substrate, and manufacturing a plurality of uniformly-distributed N-type through holes in each region; depositing insulation layers on the inner surfaces, except for bottoms, of the N-type through holes and the isolation trench and the surface of a part of reflection layer; depositing metal to form conductive bolts in the N-type through holes, forming a positive electrode conductive bump on the exposed partial reflection layer, and forming negative electrode conductive bumps which are connected with the conductive bolts in the single region, so as to form LED modules; and packaging one or more LED module(s) and a functional chip to form a high-voltage LED device. The invention also provides the high-voltage LED device, and the problems of current density local crowding effect and heat dissipation of a power-type chip are solved.
Description
Technical field
The invention belongs to luminescent device and make the field, relate in particular to a kind of high-voltage LED device and manufacture method thereof.
Background technology
Along with take nitride as the basis high brightness LED (Light Emitting Diode, the exploitation of LED) using, new generation of green environmental protection solid light source nitride LED has become the emphasis of research, the especially exploitation take third generation semiconductor gallium nitride (GaN) as the blue led of representative.Have take gallium nitride (GaN), InGaN (InGaN) and aluminium gallium nitride alloy (AlGaN) alloy as main III hi-nitride semiconductor material that wide direct band gap, interior external quantum efficiency are high, the characteristics such as high heat conductance, high temperature resistant, anticorrosive, shock resistance, high strength and high rigidity, be the ideal material of making at present the high brightness luminescent device.
Traditional LED forms P type contact structures on Sapphire Substrate GaN structure, this structure is to avoid light from the low P type GaN layer top taking-up of conductance and the deposition current diffusion layer, but the current-diffusion layer thickness can limit respectively the ability that light extraction efficiency and large electric current are diffused, and the heat of pn knot goes by the low Sapphire Substrate derivation of thermal conductivity coefficient, thermally conductive pathways is long, thermal resistance is large, in addition, P electrode and lead-in wire also can block part light and enter device package.so, flip-chip (Flip chip) structure is proposed, in this structure, light needn't directly take out from Sapphire Substrate through current-diffusion layer, therefore, lighttight current-diffusion layer can increase current density and reverberation simultaneously by thickening, and the heat of pn knot is directly led to thermal conductivity coefficient high silicon substrate or aluminum nitride ceramic substrate by metal salient point, thermally conductive pathways is short, thermal resistance is little, good heat dissipation effect, and, increased the reflector layer that is in the light that to eliminate electrode and lead-in wire between pn knot and P electrode, therefore this structure has electricity, light, the more excellent characteristics in aspect such as heat.
But, along with the application of high-power LED illumination industry is fast-developing, often needing several or tens, even up to a hundred LED uses that be together in series or parallel is to prepare high-voltage LED device.The high-voltage LED device key of this structure and lead-in wire is many, cost is high, area is large, and under large circuit due to the generation of auger recombination, the local crowding effect that easily produces of current density, the decline of LED light efficiency straight line.Due under same power output, although high-voltage LED device is lower than the needed drive current of low-voltage LED device, LED light efficiency under low current is very high.
now take a kind of general high-voltage LED device manufacture craft as example, referring to Fig. 1, deposit successively N-type limiting layer 12 on substrate 10, multiple quantum well active layer 14 and P type limiting layer 16, then, make N electrode 18 and P electrode 20 by plated metal on described N limiting layer 12 and described P type limiting layer 16, form a LED, then, to a plurality of LED (Chip On Board that carries out that on plate, wafer directly fills, COB) encapsulation, by the metal connecting line 22 that arranges on electrode, described a plurality of LED are bonded on substrate, form a plurality of LED series connection and/or in parallel, form high-voltage LED device therefore, hope solves the problems referred to above by series connection and/or the high-voltage LED structure that forms in parallel of using low-power LED.But, because the power density of high-power LED chip is very high, power is very large, generate heat very severe, only by the simple series connection of low-power LED and/or in parallel, prepare high-voltage LED through Flip chip technology again, still can not save the step of chip die bond, gold thread bonding, therefore, can not reduce area and eliminate being in the light of electrode and lead-in wire, can not reduce the chip self-resistance, can not effectively solve area excessive and the current density local congestion effect that produces and the heat dissipation problem of high-power LED chip simultaneously.Therefore, the heat dissipation problem of current density local congestion effect and power-type chip has become the serious bottleneck of restriction high-voltage LED.So, still need to the hot system to device be optimized design at aspects such as structure and materials, addressing the above problem, and then realize the miniaturization of LED package dimension and integrated, improve device reliability.
In order to address the above problem, can directly make the integrated manufacturing of the high-voltage LED structure that can reduce current density local congestion effect on the LED chip internal structure when realizing III group-III nitride high-voltage LED device, then adopt Flip chip technology that high-voltage LED structure and integrated being inverted in wafer on the enterprising andante of substrate of the pottery of interconnect architecture or silicon substrate of functional chip are directly filled, can dispersed high-voltage LED device to prepare large electric current.But, still there is sizable barrier in the implementation process of reality, demand introducing the new method that effectively to improve defects urgently, use to solve third generation semi-conducting material making high-voltage LED device but can not solving the problem of the integrated and encapsulation technology of current density local congestion effect of facing.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of manufacture method that realizes high-voltage LED device, to solve the heat dissipation problem of current density local congestion effect and power-type chip.
For addressing the above problem, the invention provides a kind of manufacture method of high-voltage LED device, comprise the steps: to provide a substrate, form successively N-type limiting layer, epitaxial loayer and reflector on described substrate; Make the isolated groove that at least one runs through reflector, epitaxial loayer, N-type limiting layer, to isolate at least two zones above substrate, make a plurality of equally distributed N-type through holes in each described zone, described N-type through hole runs through reflector, epitaxial loayer; First depositing insulating layer on the inner surface of N-type through hole and isolated groove and surface, reflector, then remove the partial insulative layer on bottom and the surface, reflector of N-type through hole and isolated groove, expose bottom and the partially reflecting layer of N-type through hole and isolated groove; Plated metal to form conductive plugs in the N-type through hole, forms the positive electrode conductive projection, and forms the negative electrode conductive projection that connects all conductive plugs in single zone, thereby forms LED module on the partially reflecting layer that exposes; One or more above-mentioned LED modules and functional chip are encapsulated, to form high-voltage LED device.
According to a further aspect in the invention, a kind of high-voltage LED device has also been proposed, comprise substrate, functional chip and also comprise at least one LED module, be provided with metal line on the surface of described substrate, described each LED module advances to comprise at least two LED, and described each LED has negative electrode conductive projection and positive electrode conductive projection; Wherein, described LED module and functional chip are welded on metal line on substrate by the salient point solder-ball flip.
this shows, do not changing the LED epitaxial structure, and effectively utilize under the prerequisite of LED chip self structure characteristic, can reduce the N-type through hole of current density local effect by employing through hole technology with preparation in the N electrode process that forms each LED, then, form conductive plugs in the N-type through hole, and form the negative electrode conductive projection that connects all conductive plugs in single zone and form the positive electrode conductive projection on the reflector that exposes, then, LED module is welded on metal line on substrate by the salient point solder-ball flip, complete the integrated manufacturing of high-voltage LED device.Therefore, the local large electric current that produces in each LED can be evenly dispersed by the through hole that exists, therefore, solved the problem of current density local congestion effect, electric current after disperseing by through hole also reduces in local pyrexia thereupon, has solved simultaneously the heat dissipation problem of high-voltage LED device.In addition, the negative electrode conductive projection of each LED in described LED module and positive electrode conductive projection can be directly be welded in metal line on substrate by the salient point solder-ball flip, described functional chip can also be welded in metal line on substrate by the salient point solder-ball flip, all omitted significantly the step of chip die bond, gold thread bonding, therefore, reduce area and eliminated being in the light of electrode and lead-in wire, and in chip body, self-resistance also reduces thereupon, has also further improved the heat dissipation problem of high-voltage LED device.
Description of drawings
Fig. 1 is the structural representation of high-voltage LED device of the prior art.
Fig. 2 a to Fig. 2 h is the manufacture method of the high-voltage LED device of one embodiment of the invention.
Fig. 2 i covers the structural representation of the high-voltage LED device of fluorescent powder silica gel in one embodiment of the invention.
Fig. 2 j covers the structural representation of the substrate of fluorescent powder silica gel in one embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that should comprise in addition, length, width and the degree of depth in Practical manufacturing.
Referring to Fig. 2 f, the present invention proposes a kind of high-voltage LED device, comprise LED module (described LED module is made of substrate 100, nitride nucleating layer 102, N-type limiting layer 104, epitaxial loayer 111, reflector 112, isolated groove 114, insulating barrier 118, conductive plugs 120, negative electrode conductive projection 122, positive electrode conductive projection 124), functional chip (not shown) and substrate 2 '.a high-voltage LED device 3 ' comprises at least one LED module, can comprise several or tens according to actual needs, even up to a hundred LED modules are (in Figure of description only take a LED module as example, as the actual requirement according to high-voltage LED device, can also comprise the LED module more than 2 or 2), described each LED module comprises that at least (LED module in Figure of description comprises 3 LED to two LED, therefore LED is identified as respectively L1, L2, L3, in other LED modules, the sign of LED is similar, comprise 4 LED as other LED modules, the LED in described other LED modules is identified as respectively L1, L2, L3, L4, do not give unnecessary details one by one at this).Described each LED comprises conductive plugs 120, negative electrode conductive projection 122 and positive electrode conductive projection 124, and by described conductive plugs 120, N-type limiting layer 104 is realized being connected with negative electrode conductive projection 122, voltage evenly is added to P type limiting layer 110 and realizes being electrically connected to positive electrode conductive projection 124 via reflector 112.When included LED module quantity increased, described functional chip number also can increase thereupon.Described functional chip comprises LED drive circuit and esd protection circuit at least.Described substrate 2 ' can be pottery or silicon substrate chip on board, and is provided with metal line on described substrate 2 ', described LED module be connected functional chip and all be connected with substrate 2 ' by the metal line on substrate 2 '.
The below is take a kind of high-voltage LED device shown in Fig. 2 f as example, 2a to 2h by reference to the accompanying drawings, the manufacture method that only has a high-voltage LED device of a LED module take manufacturing is described in detail as example, yet those skilled in the art should know how the method is applied to make the high-voltage LED device module with a plurality of LED modules.Described method comprises the steps:
S100 a: substrate is provided, forms successively N-type limiting layer, epitaxial loayer and reflector on described substrate.
Referring to Fig. 2 a, a substrate 100 is provided, form successively from the bottom to top N-type limiting layer 104, epitaxial loayer 111 and reflector 112 on described substrate 100.
Described epitaxial loayer 111 comprises multiple quantum well active layer 106, P type nitride layer 108, the P type limiting layer 110 that is formed at successively on described N-type limiting layer 104.
More excellent, before forming N-type limiting layer 104 on described substrate 100, form nitride nucleating layer 102 on described substrate 100.
Wherein, described N-type limiting layer 104 can be the N-type nitride layer, and described P type limiting layer 110 can be P type nitride layer.
The material of making described reflector 112 is nickel gold (Ni/Au) alloy or other metals, and thickness is
So that subsequent technique is made the P electrode of LED.
S101: make the isolated groove that at least one runs through reflector, epitaxial loayer, N-type limiting layer, to isolate at least two zones above substrate, make a plurality of equally distributed N-type through holes in each described zone, described N-type through hole runs through reflector, epitaxial loayer.
Referring to Fig. 2 b, at first, adopt inductively coupled plasma engraving method (Inductively Coupled Plasma Etcher, ICP) at least one isolated groove 114 of preparation on substrate 100, and described isolated groove 114 runs through reflector 112, epitaxial loayer 111 and N-type limiting layer 104, expose the surface of substrate 100, and the part on substrate 100 is divided into a plurality of zones, so that subsequent technique prepares N-type through hole 116.
If after forming described substrate 100, deposited nitride nucleating layer 102 on substrate 100, when preparing isolated groove 114 on substrate 100, after described isolated groove runs through reflector 112, epitaxial loayer 111, N-type limiting layer 104, also need to continue nitride etching nucleating layer 102.
Then, adopt the through hole technology to prepare a plurality of equally distributed N-type through holes 116 on described each regional substrate 100, described through hole 116 runs through reflector 112 and epitaxial loayer 111 and stops on the surface of N-type limiting layer 104, in order to carry out the negative electrode conductive projection that subsequent technique prepares LED in N-type through hole 116, the width dimensions of described N-type through hole 116 (CD) is 1～50um (micron).
Certainly, described through hole 116 also can run through reflector 112 and epitaxial loayer 111 and extend into N-type limiting layer 104 and (namely etches away the N-type nitride nucleating layer 104 of segment thickness, as shown in Fig. 2 b), in order to carry out the negative electrode conductive projection that subsequent technique prepares LED in N-type through hole 116, can realize purpose of the present invention equally.
S102: first depositing insulating layer on the inner surface of N-type through hole and isolated groove and surface, reflector, remove again the partial insulative layer on bottom and the surface, reflector of N-type through hole and isolated groove, expose bottom and the partially reflecting layer of N-type through hole and isolated groove.
Referring to Fig. 2 c, at first, at inner surface (comprising sidewall and bottom) and the reflector 112 upper depositing insulating layers 118 in surface of described N-type through hole 116 and described isolated groove 114.Then, the photoresist of deposition pattern and take patterned photoresist as mask on insulating barrier 118, the lip-deep partial insulative layer 118 in the bottom of etching vias 116 and isolated groove 114 and reflector in described each zone, exposing bottom and the partially reflecting layer 112 of N-type through hole 116 and isolated groove 114, can be for example the partially reflecting layer that closes on isolated groove 114 and close this edges of regions in each zone.At last, remove photoresist.Referring to Fig. 2 d, this is the vertical view of Fig. 2 c, by the structure of Fig. 2 d as seen, the LED module that this structure can be made in order to consist of subsequent technique, and the LED zone on the substrate 2 ' that needs in number, shape and position and the subsequent technique of included through hole 116, isolated groove 114 and the partially reflecting layer 112 that exposes in Fig. 2 d 3 " structure is corresponding one by one.
Described insulating barrier 118 is silicon dioxide (SiO2) or other materials, and thickness is
More excellent, the position of etched partial insulative layer 118 in described each zone will be selected consistent with shape.But, position and the shape expression that be not limited to this legend of described etched partial insulative layer 118 in each zone, the requirement that also can will realize according to high-voltage LED device, to wanting etched partial insulative layer 118 to carry out selection and the adjusting of position and shape in each zone, forming the described reflector that exposes 112, and be used for the positive electrode conductive projection that subsequent technique prepares LED.
S103: plated metal to form conductive plugs in the N-type through hole, forms the positive electrode conductive projection, and forms the negative electrode conductive projection that connects all conductive plugs in single zone, thereby forms LED module on the partially reflecting layer that exposes.
Referring to Fig. 2 e, adopt lift-off technology (lift off technology), plated metal on insulating barrier 118 in N-type through hole 116 in described each zone, between through hole 116 and on the described reflector that exposes 112, consist of respectively conductive plugs 120, negative electrode conductive projection 122, positive electrode conductive projection 124, form 3 LED, described 3 LED are identified as respectively L1, L2 and L3, and 3 LED have consisted of LED module jointly by preparation on same described substrate 100.
Owing to having adopted lift off technology, in described each zone, conductive plugs 120 once forms with negative electrode conductive projection 122 and positive electrode conductive projection 124, and by conductive plugs 120, N-type limiting layer 104 has been realized being electrically connected to negative electrode conductive projection 122, voltage evenly is added to P type limiting layer 110 and realizes being connected with positive electrode conductive projection 124 by reflector 112.This shows, the technique that not only forms LED is simple, and because the probability of happening of auger recombination is directly proportional to 3 powers of carrier density, so the large electric current that each LED fully can be according to actual needs controls passing through the quantity of through hole 116 carries out Uniform Dispersion, and then can reduce the generation of auger recombination, carry out the optimization of properties of product, eliminated current density local congestion effect, effectively the problem of the decline of the LED light efficiency straight line under the large electric current of suppression device.
S104: one or more above-mentioned LED modules and functional chip are encapsulated, to form high-voltage LED device.
Referring to Fig. 2 f, be provided with metal line on described substrate 2 ', so that described LED module and described functional chip (not shown) are all realized welding by the metal line on substrate 2 ' and substrate 2 ', and cover to guarantee reliability with resin, and synchronously form the salient point soldered ball, and then form high-voltage LED device 3 '.
Referring to Fig. 2 g, described substrate 2 ' can be with the pottery of interconnect architecture or silicon substrate chip on board.Described substrate 2 ' can be divided into the LED zone 3 for the bonding LED module " and the functional area (not shown) of key function chip.Described LED zone can be divided into again a plurality of regional D
i(D
1, D
2..., D
i, the number of i is more than or equal to the LED number, and the LED number in the present embodiment is 3), at described each regional D
iComprise substrate the first electrode 126 and a plurality of substrate the second electrode 128, described each regional D
iIn number and the conduction in described each LED of substrate the second electrode 128 to fasten 120 numbers identical.
Then, referring to Fig. 2 h, at described each regional D
iIn substrate the first electrode 126 on cover the first metal layer 130 (also can be at described each regional D
iIn substrate the first electrode on do not cover the first metal layer), at described each regional D
iIn a plurality of substrates the second electrode 128 on cover the second metal level 132, by described the second metal level 132 so that described a plurality of substrate the second electrode 128 is interconnected each other, thereby form substrate 2 ' with interconnect architecture.Then, the first metal line 134 (also can directly on substrate the first electrode, the first metal line be set) is set on described the first metal layer 130, on described the second metal level 132, the second metal line 136 is set.Therefore, the positive electrode conductive projection 124 of described each LED is by the first metal line 134 and described each regional D
iIn substrate the first electrode 126 connect, the negative electrode conductive projection 122 of described each LED is by the second metal line 136 and described each regional D
iIn substrate the second electrode 128 connect, the synchronous salient point soldered ball that forms on the positive electrode conductive projection 124 of each LED and negative electrode conductive projection 122 during welding, and being welded on substrate 2 ' with interconnect architecture by the salient point soldered ball.
In like manner, described functional area on described substrate 2 ' comprises that number can be one substrate the first electrode 126 and substrate the second electrode 128, on substrate the first electrode 126 in described functional area and substrate the second electrode 128, the first metal line and the second metal line can be set directly respectively, cover respectively the first metal layer and the second metal level on substrate the first electrode 126 that as required also can be in described functional area and substrate the second electrode 128, and then on described the first metal layer and described the second metal level, the first metal line and the second metal line are set respectively.Described each functional chip by described the first metal line be connected the second metal line and substrate the first electrode 126 in described each functional area and be connected electrode 128 with substrate and be connected, also synchronously form the salient point soldered ball during welding on functional chip, and be welded on substrate 2 ' with interconnect architecture by the salient point soldered ball.
When loading power, each LED on described each LED module isolates fully by isolated groove 114 on electricity.
Because LED module adopts the through hole technology, and can by the via count the Control of the aim, the large electric current in part be disperseed according to the requirement of actual high-voltage LED device, local pyrexia reduces thereupon, has solved the heat dissipation problem of current density local congestion effect.Simultaneously, LED module and functional chip use flip chip technology, directly omitted the step of chip die bond, gold thread bonding, reduced area and eliminated being in the light of electrode and lead-in wire, and in chip body, self-resistance also reduces thereupon, has also further improved the heat dissipation problem of high-voltage LED device.
More excellent, apply fluorescent powder silica gel 138 (referring to Fig. 2 i and 2j) on described LED module, prepare the high-voltage LED device that can adapt to different demands.
Although the present invention with preferred embodiment openly as above; but it is not to limit claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (16)
1. the manufacture method of a high-voltage LED device, comprise the steps:
One substrate is provided, forms successively N-type limiting layer, epitaxial loayer and reflector on described substrate;
Make the isolated groove that at least one runs through reflector, epitaxial loayer, N-type limiting layer, to isolate at least two zones above substrate, make a plurality of equally distributed N-type through holes in each described zone, described N-type through hole runs through reflector, epitaxial loayer;
First depositing insulating layer on the inner surface of N-type through hole and isolated groove and surface, reflector, then remove the partial insulative layer on bottom and the surface, reflector of N-type through hole and isolated groove, expose bottom and the partially reflecting layer of N-type through hole and isolated groove;
Plated metal to form conductive plugs in the N-type through hole, forms the positive electrode conductive projection, and forms the negative electrode conductive projection that connects all conductive plugs in single zone, thereby forms LED module on the partially reflecting layer that exposes;
One or more above-mentioned LED modules and functional chip are encapsulated, and forming high-voltage LED device, described being encapsulated on the metal line that a substrate surface with interconnect architecture is provided with carried out.
2. the manufacture method of high-voltage LED device according to claim 1, is characterized in that: before forming the N-type limiting layer on described substrate, also comprise: form the nitride nucleating layer on described substrate.
3. the manufacture method of high-voltage LED device according to claim 1, it is characterized in that: described epitaxial loayer comprises multiple quantum well active layer, P type nitride layer, the P type limiting layer that is formed at successively on described N-type limiting layer.
4. the manufacture method of high-voltage LED device according to claim 1, it is characterized in that: described N-type through hole runs through reflector, epitaxial loayer and extends in part N-type limiting layer.
5. the manufacture method of high-voltage LED device according to claim 1, it is characterized in that: described basic N-type limiting layer is the N-type nitride layer.
6. the manufacture method of high-voltage LED device according to claim 3, it is characterized in that: described P type limiting layer is P type nitride layer.
7. high-voltage LED device according to claim 1, it is characterized in that: described conductive plugs is connected the N-type limiting layer with the negative electrode conductive projection.
8. the manufacture method of high-voltage LED device according to claim 1, it is characterized in that: the material in described reflector is the nickel billon, and thickness is
9. the manufacture method of high-voltage LED device according to claim 1, it is characterized in that: the width dimensions of described N-type through hole is 1～50 micron.
10. the manufacture method of high-voltage LED device according to claim 1, it is characterized in that: described insulating barrier is silicon dioxide, and thickness is
11. the manufacture method of high-voltage LED device according to claim 1 is characterized in that: the corresponding LED in each described zone, carry out isolation fully on electricity by isolated groove between each LED on described LED module.
12. the manufacture method of high-voltage LED device according to claim 1 is characterized in that: adopt on plate wafer directly to fill encapsulation technology described one or more LED modules and functional chip are encapsulated.
13. the manufacture method of high-voltage LED device according to claim 12 is characterized in that: described wafer directly fills encapsulation technology and uses pottery or silicon substrate chip on board as substrate.
14. high-voltage LED device according to claim 1 is characterized in that: after forming high-voltage LED device, also comprise: apply fluorescent powder silica gel on described high-voltage LED device.
15. high-voltage LED device according to claim 1 is characterized in that: described functional chip comprises that at least LED drives function and esd protection circuit function.
16. a high-voltage LED device that utilizes the manufacture method formation of high-voltage LED device claimed in claim 1 comprises:
Substrate, described substrate are interconnect architecture and are provided with metal line at described substrate surface; And
Functional chip;
Described high-voltage LED device also comprises:
At least one LED module, each LED module further comprises at least two LED, and each LED is respectively formed in the zone that is isolated by isolated groove, and each described LED has negative electrode conductive projection and positive electrode conductive projection; Wherein,
Described LED module and functional chip are welded on metal line on substrate by the salient point solder-ball flip.
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