CN103794695A - Flip chip type light-emitting diode (LED) chip - Google Patents
Flip chip type light-emitting diode (LED) chip Download PDFInfo
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- CN103794695A CN103794695A CN201410065675.4A CN201410065675A CN103794695A CN 103794695 A CN103794695 A CN 103794695A CN 201410065675 A CN201410065675 A CN 201410065675A CN 103794695 A CN103794695 A CN 103794695A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a flip chip type light-emitting diode (LED) chip which comprises a substrate, wherein a first conductive semiconductor layer, a light emitting layer, a second conductive semiconductor layer, a conductive layer and a reflective layer are stacked on the front surface of the substrate upwards in sequence. The flip chip type LED chip further comprises first electrode holes and second electrode holes, wherein each first electrode hole is exposed out of the first conductive semiconductor layer, an insulation layer is coated on the wall of the first electrode hole, and each second electrode hole is exposed out of the conductive layer. A first electrode is arranged in each first electrode hole, one end of the first electrode is positioned on the front surface of the reflective layer, and the other end of the first electrode electrically contacts with the first conductive semiconductor layer. A second electrode is arranged in each second electrode hole, one end of the second electrode is positioned on the front surface of the reflective layer, and the other end of the second electrode electrically contacts with the conductive layer. The first electrode holes are distributed in the LED chip uniformly, and the second electrode holes are distributed around the first electrode holes uniformly. By means of the flip chip type LED chip, values of resistance of resistors between different positive electrodes and negative electrodes are relatively the same, and therefore, the LED chip can emit uniform light.
Description
Technical field
The present invention relates to light-emitting component technical field, relate in particular to a kind of crystal covering type LED chip.
Background technology
Along with LED(Light Emitting Diode, light-emitting diode) lighting technology growing, the application of LED in people's daily life is also more and more extensive.Employing is covered LED(that crystalline substance (Flip Chip) mode encapsulates hereinafter referred to as crystal covering type LED) die bond mode simple, have higher reliability, volume production feasibility is significantly promoted, and the advantages such as the processing procedure time, high yield, the heat-conducting effect that have shortening high-temperature baking concurrently are good, high amount of light, become the technology that industry does one's utmost to carry out then.
The luminous of LED is to utilize anodal electric current to arrive negative pole to complete, electric current can arrive negative pole by positive pole with minimum resistance route, general resistance value is decided by the distance of electric current route, and anodal to negative pole, more resistance value is less, more resistance is just larger to negative pole for positive pole.But, electrode in existing LED is generally wire-like, this makes an electric current of single-point enter negative pole from positive pole, and the brightest to the nearest distance of electric current to negative pole with positive pole, other position will due to apart from metal wire compared with far away and resistance more greatly, relatively dark, thereby there is the problem of non-uniform light.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of crystal covering type LED chip.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of crystal covering type LED chip is provided, comprise substrate, stack gradually and be provided with the first conductive-type semiconductor layer, luminescent layer, the second conductive-type semiconductor layer, conductive layer and reflector by facing up of substrate; Also comprise at least one first electrode hole and at least one second electrode hole, described the first electrode hole is through to luminescent layer and is exposed the first conductive-type semiconductor layer by described reflector, described the second electrode hole runs through reflector and exposes conductive layer, on the hole wall of the first electrode hole, is coated with insulating barrier; In the first electrode hole, be provided with the first electrode, it is in electrical contact that one end of described the first electrode is positioned at the front in reflector, the other end and the first conductive-type semiconductor layer; In the second electrode hole, be provided with the second electrode, it is in electrical contact that one end of described the second electrode is positioned at the front in reflector, the other end and conductive layer; Described the first electrode hole is evenly distributed on LED chip, and described the second electrode hole is evenly distributed on around the first electrode hole.
Wherein, described the first electrode hole and the second electrode hole are provided with at least two, between described the first electrode, are interconnected to form the first region, between described the second electrode, are interconnected to form the second electrode district.
Wherein, described the first electrode can be divided into many groups, and each group at least comprises first electrode; Number of electrodes in is on the same group more than one, and the first electrode being positioned on the same group interconnects, and between the first electrode on the same group, is not at least connected with the first electrode in another group by first electrode in this group.
Wherein, on described the first region and the second electrode district, cover the separator of being made by insulating material, described separator is provided with at least two through holes, in described through hole, is provided with conductive metal electrode, and described conductive metal electrode is connected with the first region and the second electrode district separately respectively.
Wherein, be made up of identical high reflectance insulating material in described insulating barrier and reflector, and described high reflectance insulating material comprises distributed bragg reflector mirror DBR or SiO
2, SiNx, AlN.
Wherein, the material of described the first electrode and the second electrode is the one in gold, silver, platinum, titanium, chromium, nickel, copper and aluminium.
Wherein, the material of described separator is silicon dioxide or distributed bragg reflector mirror DBR.
Wherein, the material of described conductive layer is transparent electric conducting material.
Wherein, the material of described conductive layer is tin-doped indium oxide ITO.
The invention has the beneficial effects as follows: the first electrode is evenly set on LED chip and around the first electrode, the second electrode is evenly set, can guarantee that the resistance between different positive and negative electrodes is comparatively approaching, thereby make LED chip send uniform light.
Accompanying drawing explanation
Fig. 1 is the cross section view of the first execution mode of crystal covering type LED chip of the present invention;
Fig. 2 is the vertical view of the first execution mode of crystal covering type LED chip of the present invention;
Fig. 3 is the vertical view of the second execution mode of crystal covering type LED chip of the present invention;
Fig. 4 is that the second execution mode of crystal covering type LED chip of the present invention covers the vertical view after separator;
Fig. 5 is the vertical view of the 3rd execution mode of crystal covering type LED chip of the present invention;
Fig. 6 is the vertical view of the 4th execution mode of crystal covering type LED chip of the present invention.
Main element symbol description:
10, substrate; 20, the first conductive-type semiconductor layer; 30, luminescent layer; 40, the second conductive-type semiconductor layer; 50, conductive layer; 60, reflector; 61, insulating barrier; 70, the first electrode hole; 71, the first electrode; 72, the first region; 80, the second electrode hole; 81, the second electrode; 82, the second electrode district; 90, separator; 91, the first through hole; 92, the second through hole; 100, conductive metal electrode.
Embodiment
By describing technology contents of the present invention, structural feature in detail, being realized object and effect, below in conjunction with execution mode and coordinate accompanying drawing to be explained in detail.
Fig. 1 is the longitudinal sectional drawing of the first execution mode of the present invention, comprises substrate 10, is stacked gradually and is provided with the first conductive-type semiconductor layer 20, luminescent layer 30, the second conductive-type semiconductor layer 40, conductive layer 50 and reflector 60 by facing up of substrate 10.Wherein, also comprise three the first electrode holes 70 and multiple the first electrode hole 70 the second electrode hole 80 around that is centered around, the first electrode hole 70 is through to luminescent layer 30 and is exposed the first conductive-type semiconductor layer 20 by reflector 60, the second electrode hole 80 runs through reflector 60 and exposes on the hole wall of conductive layer 50, the first electrode holes 70 and is coated with insulating barrier 61.It is in electrical contact that the one end that is provided with the first electrode 71, the first electrodes 71 in the first electrode hole 70 is positioned at the front in reflector 60, the other end and the first conductive-type semiconductor layer 20; It is in electrical contact that the one end that is provided with the second electrode 81, the second electrodes 81 in the second electrode hole 80 is positioned at front, the other end and the conductive layer 50 in reflector.
Fig. 2 is the vertical view of Fig. 1, and in Fig. 2, the first electrode hole 70 is evenly distributed on LED chip, equal 80 even being distributed in around the first electrode hole 70 of the second electrode hole.Wherein between the first electrode 70, be interconnected to form the first region 71, as shown in the first electrode 70 dash area around in figure; Between the second electrode 80, be interconnected to form the second electrode district 81, as shown in the second electrode 80 dash area around in figure.
This execution mode, by the first electrode being evenly set on LED chip and around the first electrode, the second electrode being evenly set, can guarantee that the resistance between different positive and negative electrodes is comparatively approaching, thereby make LED chip send uniform light.In this execution mode and follow-up execution mode, the first electrode can be made as to positive electrode, the second electrode is made as negative electrode, otherwise or, the first electrode is made as to negative electrode, the second electrode is made as positive electrode, does not affect the implementation result of these execution modes.
Particularly, in the first execution mode a optimization is improved, be made up of identical high reflectance insulating material in described insulating barrier 61 and reflector 60.In comparatively desirable execution mode, described high reflectance insulating material can be selected with SiO
2, one in the raw material such as SiNx, AlN to be to reach good insulation and reflecting effect, or adopts distributed bragg reflector mirror DBR to be used as reflector.
Particularly, in the first execution mode a optimization is improved, the material of described the first electrode 71 and the second electrode 72 is the one in gold, silver, platinum, titanium, chromium, nickel, copper and aluminium, adopts these materials can reach best effect.
Particularly, in the first execution mode a optimization is improved, described conductive layer 50 can adopt transparent electric conducting material, can make like this light of luminescent layer 30 be reflected back by the reflector 60 of conductive layer 50 tops through after conductive layer 50, reaches better lighting effect.Further, conductive layer 50 can be selected tin-doped indium oxide ITO, although ITO is comparatively expensive, can make the present invention reach best effect.
Fig. 3 is the second execution mode of the present invention, the difference of itself and the first execution mode is, comprise equally distributed 13 the first electrodes 71, and be divided into 4 groups, wherein three groups every group comprises four interconnective the first electrodes 71 and forms three the first regions 72, has one group to comprise first electrode 71 and form separately a first region 72.All the other second electrodes 81 that are uniformly distributed around form the second electrode district 82.
Shown in Fig. 4, on four groups of the first regions 72 and the second electrode district 82, cover the separator 90 of being made by insulating material.The lower right corner of this separator 90 is provided with 91, four the first through holes 91 of four the first through holes and exposes four the first electrodes 71 that belong to respectively four groups of different the first regions 72; Be provided with two the second through holes 92 in the upper left corner of this separator 90, these two the second through holes 92 expose the second electrode district 82, in the first through hole 91 and the second through hole 92, are respectively equipped with conductive metal electrode 100.The conductive metal electrode 100 that is arranged in the first through hole 91 is electrically connected respectively and is interconnected to constitute on separator 90 the first electrode layer (i.e. the delta-shaped region in the figure lower right corner) with four groups of the first regions 72; The conductive metal electrode 100 and the second electrode district 82 that are arranged in the second through hole 92 are electrically connected and are interconnected to constitute on separator 90 the second electrode lay (i.e. the delta-shaped region in the figure upper left corner).The first electrode layer and the second electrode lay for subsequent handling as a whole electrode contacts be combined with tin cream processing procedure, between two electrode layers, must there is certain interval, otherwise in subsequent handling, may occur that the phenomenon that the conducting metal on electrode layer overflows causes short circuit.
Present embodiment is conducive to the first region 72 that is distributed in diverse location on LED chip to be connected as a single entity, thereby the first all electrodes 71 is electrical connected, and increase again that separator is after 90s forms different overall electrode contacts for the first region 72 and the second electrode district 82 arrange respectively two by conductive metal electrode 100, can facilitate so follow-up packaging process, prevent the short circuit between the first electrode and the second electrode, significantly improving product yield.
Particularly, in the second execution mode a optimization is improved, the material of separator 90 adopts silicon dioxide or distributed bragg reflector mirror DBR to reach best insulation isolation effect.
Fig. 5 enters to be that with the 4th execution mode and the difference of the second execution mode the arrangement mode of the first electrode 71 and the first region 72 is different with the 3rd execution mode shown in Fig. 6, and remaining structure is all identical.Its object is to be all to level off to best Uniform Illumination effect, and in actual production, the arrangement mode of the first electrode 71 and the first region 72 is not limited to above-mentioned several.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes specification of the present invention and accompanying drawing content to do; or be directly or indirectly used in other correlative technology fields, be all in like manner included in scope of patent protection of the present invention.
Claims (9)
1. a crystal covering type LED chip, comprises substrate, is stacked gradually and is provided with the first conductive-type semiconductor layer, luminescent layer, the second conductive-type semiconductor layer, conductive layer and reflector by facing up of substrate;
Also comprise at least one first electrode hole and at least one second electrode hole, described the first electrode hole is through to luminescent layer and is exposed the first conductive-type semiconductor layer by described reflector, described the second electrode hole runs through reflector and exposes conductive layer, on the hole wall of the first electrode hole, is coated with insulating barrier;
In the first electrode hole, be provided with the first electrode, it is in electrical contact that one end of described the first electrode is positioned at the front in reflector, the other end and the first conductive-type semiconductor layer; In the second electrode hole, be provided with the second electrode, it is in electrical contact that one end of described the second electrode is positioned at the front in reflector, the other end and conductive layer;
It is characterized in that, described the first electrode hole is evenly distributed on LED chip, and described the second electrode hole is evenly distributed on around the first electrode hole.
2. crystal covering type LED chip according to claim 1, it is characterized in that, described the first electrode hole and the second electrode hole are provided with at least two, between described the first electrode, are interconnected to form the first region, between described the second electrode, are interconnected to form the second electrode district.
3. crystal covering type LED chip according to claim 2, is characterized in that, described the first electrode can be divided into many groups, and each group at least comprises first electrode; Number of electrodes in is on the same group more than one, and the first electrode being positioned on the same group interconnects, and between the first electrode on the same group, is not at least connected with the first electrode in another group by first electrode in this group.
4. crystal covering type LED chip according to claim 3, it is characterized in that, on described the first region and the second electrode district, cover the separator of being made by insulating material, described separator is provided with at least two through holes, in described through hole, be provided with conductive metal electrode, described conductive metal electrode is connected with the first region and the second electrode district separately respectively.
5. according to the crystal covering type LED chip described in claim 1 to 4 any one, it is characterized in that, be made up of identical high reflectance insulating material in described insulating barrier and reflector, and described high reflectance insulating material comprises distributed bragg reflector mirror DBR or SiO
2, SiNx, AlN.
6. according to the crystal covering type LED chip described in claim 1 to 4 any one, it is characterized in that, the material of described the first electrode and the second electrode is the one in gold, silver, platinum, titanium, chromium, nickel, copper and aluminium.
7. according to the crystal covering type LED chip described in claim 1 to 4 any one, it is characterized in that, the material of described separator is silicon dioxide or distributed bragg reflector mirror DBR.
8. according to the crystal covering type LED chip described in claim 1 to 4 any one, it is characterized in that, the material of described conductive layer is transparent electric conducting material.
9. crystal covering type LED chip according to claim 8, is characterized in that, the material of described conductive layer is tin-doped indium oxide ITO.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410065675.4A CN103794695A (en) | 2014-02-25 | 2014-02-25 | Flip chip type light-emitting diode (LED) chip |
| PCT/CN2014/082509 WO2015127744A1 (en) | 2014-02-25 | 2014-07-18 | Flip-chip led chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410065675.4A CN103794695A (en) | 2014-02-25 | 2014-02-25 | Flip chip type light-emitting diode (LED) chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103794695A true CN103794695A (en) | 2014-05-14 |
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ID=50670183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410065675.4A Pending CN103794695A (en) | 2014-02-25 | 2014-02-25 | Flip chip type light-emitting diode (LED) chip |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103794695A (en) |
| WO (1) | WO2015127744A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015127744A1 (en) * | 2014-02-25 | 2015-09-03 | 深圳市兆明芯科技控股有限公司 | Flip-chip led chip |
| CN105322066A (en) * | 2014-07-10 | 2016-02-10 | 晶元光电股份有限公司 | Photoelectric element and manufacture method thereof |
| CN107768500A (en) * | 2017-09-27 | 2018-03-06 | 广东晶科电子股份有限公司 | A kind of LED support and its luminescent device |
| US9966519B2 (en) | 2014-05-15 | 2018-05-08 | The Hong Kong University Of Science And Technology | Gallium nitride flip-chip light emitting diode |
| CN109524526A (en) * | 2018-11-19 | 2019-03-26 | 华中科技大学鄂州工业技术研究院 | Novel deep-UV light-emitting diode chip and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10658559B2 (en) | 2018-02-28 | 2020-05-19 | Nichia Corporation | Light emitting element and light emitting device |
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| CN102339913A (en) * | 2011-09-30 | 2012-02-01 | 映瑞光电科技(上海)有限公司 | High-voltage LED (Light Emitting Diode) device and manufacturing method thereof |
| EP2421059A2 (en) * | 2010-08-20 | 2012-02-22 | Chi Mei Lighting Technology Corp. | Light-emitting diode structure and method for manufacturing the same |
| CN203260616U (en) * | 2013-02-08 | 2013-10-30 | 刘艳 | Led chip |
| CN203456495U (en) * | 2013-08-12 | 2014-02-26 | 刘艳 | Led chip |
| CN203536464U (en) * | 2013-11-08 | 2014-04-09 | 刘艳 | Led chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794695A (en) * | 2014-02-25 | 2014-05-14 | 深圳市兆明芯科技控股有限公司 | Flip chip type light-emitting diode (LED) chip |
-
2014
- 2014-02-25 CN CN201410065675.4A patent/CN103794695A/en active Pending
- 2014-07-18 WO PCT/CN2014/082509 patent/WO2015127744A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2421059A2 (en) * | 2010-08-20 | 2012-02-22 | Chi Mei Lighting Technology Corp. | Light-emitting diode structure and method for manufacturing the same |
| CN102339913A (en) * | 2011-09-30 | 2012-02-01 | 映瑞光电科技(上海)有限公司 | High-voltage LED (Light Emitting Diode) device and manufacturing method thereof |
| CN203260616U (en) * | 2013-02-08 | 2013-10-30 | 刘艳 | Led chip |
| CN203456495U (en) * | 2013-08-12 | 2014-02-26 | 刘艳 | Led chip |
| CN203536464U (en) * | 2013-11-08 | 2014-04-09 | 刘艳 | Led chip |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015127744A1 (en) * | 2014-02-25 | 2015-09-03 | 深圳市兆明芯科技控股有限公司 | Flip-chip led chip |
| US9966519B2 (en) | 2014-05-15 | 2018-05-08 | The Hong Kong University Of Science And Technology | Gallium nitride flip-chip light emitting diode |
| CN105322066A (en) * | 2014-07-10 | 2016-02-10 | 晶元光电股份有限公司 | Photoelectric element and manufacture method thereof |
| CN105322066B (en) * | 2014-07-10 | 2020-11-27 | 晶元光电股份有限公司 | Photoelectric element and manufacturing method thereof |
| CN107768500A (en) * | 2017-09-27 | 2018-03-06 | 广东晶科电子股份有限公司 | A kind of LED support and its luminescent device |
| CN109524526A (en) * | 2018-11-19 | 2019-03-26 | 华中科技大学鄂州工业技术研究院 | Novel deep-UV light-emitting diode chip and preparation method thereof |
| CN109524526B (en) * | 2018-11-19 | 2020-07-31 | 华中科技大学鄂州工业技术研究院 | Deep ultraviolet light-emitting diode chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015127744A1 (en) | 2015-09-03 |
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