CN104037296A - Light-emitting element and manufacturing method thereof - Google Patents
Light-emitting element and manufacturing method thereof Download PDFInfo
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- CN104037296A CN104037296A CN201310073254.1A CN201310073254A CN104037296A CN 104037296 A CN104037296 A CN 104037296A CN 201310073254 A CN201310073254 A CN 201310073254A CN 104037296 A CN104037296 A CN 104037296A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The invention relates to a light-emitting element and a manufacturing method thereof. The light-emitting element comprises a substrate, a U type gallium nitride (U-GaN) layer arranged at the substrate, an N type gallium nitride (N-GaN) layer arranged on the U type gallium nitride (U-GaN) layer, a multi-layer quantum well (MQWS) arranged above the N type gallium nitride (N-GaN) layer, and a P type gallium nitride (P-GaN) layer arranged above the multi-layer quantum well (MQWS); and a transparent conductive layer and a reflection layer are combined on the P type gallium nitride (P-GaN) layer in sequence. An insulating layer coats the transparent conductive layer, the reflection layer, the P type gallium nitride (P-GaN) layer, and the multi-layer quantum well (MQWS) and at least extends to the N type gallium nitride (N-GaN) layer. A plurality of through holes are respectively formed in the two sides of the insulating layer, thereby forming a P contact electrode based on cooperation with the P type gallium nitride (P-GaN) layer and forming an N contact electrode based on cooperation with the N type gallium nitride (N-GaN) layer. Therefore, the light-emitting area of the light-emitting element in a rectangular extending mode can be improved and the heat radiation effect also can be enhanced; and the chip cutting can reach an optimum utilization efficiency.
Description
Technical field
The present invention relates to a kind of light-emitting component and preparation method thereof, refer to that especially one is used in light emitting device group body, insulating barrier is at least arrived to N shape gallium nitride layer from transparency conducting layer and reflector extension, to guarantee in a glue process, avoid elargol to be communicated with P-N, reduce the crisis of short circuit, and can be homonymy arrangement by the N electrode in light emitting device group body and P electrode, simplifying the combination of light-emitting component associated components in the time making implements, and chip package, and can really promote the effective light transmission region of light-emitting component, and the anisotropic etching that utilizes the n type gallium nitride layer in light emitting device group body increases the degree of adhering to of insulating barrier, thereby reach desired thickness, to prevent the generation of short circuit, make light-emitting diode (Light Emitting Diode, LED) qualification rate improves.
Background technology
Gallium nitride (GaN) light-emitting diode (the Light Emitting Diode of existing form, LED) composition as shown in Figure 1, light-emitting diode 60 comprises: on a substrate 10 in conjunction with a n type gallium nitride layer (N-GaN) 20, and on n type gallium nitride layer (N-GaN) 20, be combined with multi-layer quantum well (MQWS) 30, again on the quantum well (MQWS) 30 of the superiors in conjunction with a P type gallium nitride layer (P-GaN) 40, afterwards, on P type gallium nitride layer (P-GaN) 40 in conjunction with a transparent luminescent layer 50, and n type gallium nitride layer (N-GaN) wherein 20 takes down part with P type gallium nitride layer (P-GaN) 40 by etching, with the n type gallium nitride layer (N-GaN) 20 of expose portion, on the n type gallium nitride layer (N-GaN) 20 of this exposure, negative electrode 201 is set, separately between P type gallium nitride layer (P-GaN) 40 and transparency conducting layer 50, positive electrode 401 is set, between positive electrode 401 and transparency conducting layer 50, be respectively combined a protective layer 402 between n type gallium nitride layer (N-GaN) 20 and negative electrode 201, 202.
The substrate 10 that adopts the light-emitting diode 60 of above-mentioned composition is to adopt sapphire (Sapphire) to make, so that cannot conduct electricity, therefore positive and negative electrode 401,201 must be located at light-emitting diode (Light Emitting Diode, LED) 60 effect front (be the front that positive electrode 401 is located at P type gallium nitride layer (P-GaN) 40, negative electrode 201 is located at the front of n type gallium nitride layer (N-GaN) 20).This composition form, make light-emitting diode (Light Emitting Diode, LED) surface of the P type gallium nitride layer (P-GaN) 40 in 60 is by being etched to n type gallium nitride layer (N-GaN) 20, and the groove that this etching forms must have enough width, could on the surface of n type gallium nitride layer (N-GaN) 20, negative electrode 201 be set in routing mode.Therefore, cause the default light-emitting zone part of multi-layer quantum well (MQWS) 30 wherein etched, so that have influence on the light-emitting zone of light-emitting diode 60.In addition, the poor thermal conductivity of the substrate 10 of making due to sapphire, therefore also reduces the performance of light-emitting diode (Light Emitting Diode, LED) 60.
Summary of the invention
For the problems referred to above, main purpose of the present invention is to provide a kind of light-emitting component and preparation method thereof, it can promote effective light-emitting zone of light-emitting component really, and increase the degree of adhering to of insulating barrier by the anisotropic etching of n type gallium nitride layer wherein, and reach desired thickness, to prevent the generation of short circuit, the qualification rate of light-emitting diode (Light Emitting Diode, LED) is improved.
For achieving the above object, a kind of light-emitting component provided by the present invention, it comprises: a substrate, on described substrate, be combined with both sides be tilt and on U-shaped gallium nitride layer (U-GaN) and n type gallium nitride layer (N-GaN), and be combined with multi-layer quantum well (MQWS) at the default paragraph of described n type gallium nitride layer (N-GaN), separately in conjunction with a P type gallium nitride layer (P-GaN), on described P type gallium nitride layer (P-GaN), be combined with transparency conducting layer and reflector in described multi-layer quantum well (MQWS) top; It is characterized in that: the insulating barrier of a preset thickness is covered on described transparency conducting layer and reflector, and extend to n type gallium nitride layer (N-GaN) and locate; Described insulating barrier is coated described P type gallium nitride layer (P-GaN) and described multi-layer quantum well (MQWS), at the multiple open-works of the both sides of the described insulating barrier each formation in default position, above described insulating barrier, both sides is respectively combined with N electrode and P electrode, and the multiple described open-work of corresponding site is utilized to conductive metallic material conducting N electrode and P electrode, and adjust electric current by the number of described open-work quantity; Described N electrode forms a N contact electrode through corresponding multiple described open-works and described n type gallium nitride layer (N-GaN), and the described P electrode corresponding described open-work of process and described transparency conducting layer and reflector, described P type gallium nitride layer (P-GaN) form a P contact electrode.
In the technical scheme of the invention described above, the N electrode in described light-emitting component and P electrode are combined in the both sides of described insulating barrier top, can extend to described n type gallium nitride layer (N-GaN) or described substrate, and it extends the degree of sticking together when area is more large is more conducive to die bond.
The present invention also provides another technical scheme: a kind of light-emitting component, it comprises: a substrate, on described substrate, be combined with both sides be tilt and on U-shaped gallium nitride layer (U-GaN) and n type gallium nitride layer (N-GaN), and be combined with multi-layer quantum well (MQWS) at the default paragraph of described n type gallium nitride layer (N-GaN), separately in conjunction with a P type gallium nitride layer (P-GaN), and on described P type gallium nitride layer (P-GaN), be combined with transparency conducting layer and reflector in described multi-layer quantum well (MQWS) top; It is characterized in that: the insulating barrier of a preset thickness is covered on described transparency conducting layer and reflector, and extend to U-shaped gallium nitride layer (U-GaN) and locate; Described insulating barrier is by coated to described P type gallium nitride layer (P-GaN) and described multi-layer quantum well (MQWS), at the multiple open-works of the both sides of the described insulating barrier each formation in default position, above described insulating barrier, both sides is respectively combined with N electrode and P electrode, and the multiple described open-work of corresponding site is utilized to conductive metallic material conducting N electrode and P electrode, and utilize the number of described open-work quantity to adjust electric current; Described N electrode forms a N contact electrode by corresponding multiple described open-works and described n type gallium nitride layer (N-GaN), and described P electrode is by corresponding described open-work and described transparency conducting layer and reflector, described P type gallium nitride layer (P-GaN) formation one P contact electrode.
Wherein, the N electrode in described light-emitting component and P electrode are combined in the both sides of described insulating barrier top, can extend to described n type gallium nitride layer (N-GaN) or described substrate, and it extends the degree of sticking together when area is more large is more conducive to die bond.
The present invention also provides a kind of manufacture method of light-emitting component, it is characterized in that: adopt etching mode to form the n type gallium nitride layer (N-GaN) that is combined in substrate top, both sides aspect on to form an inclination, and the default paragraph of described n type gallium nitride layer (N-GaN) be sequentially combined with slightly tilt and on multi-layer quantum well (MQWS), P type gallium nitride layer (P-GaN) and transparency conducting layer and reflector, afterwards, along the effect aspect in described transparency conducting layer and reflector, cover the insulating barrier of a preset thickness and extend to described n type gallium nitride layer (N-GaN) and the intersection of described substrate with described P type gallium nitride layer (P-GaN) and the both sides of described multi-layer quantum well (MQWS), the both sides that described insulating barrier can form by described n type gallium nitride layer (N-GaN) tilt and on aspect obtain the enough power that covers, reach required thickness, default position, both sides at described insulating barrier is respectively reserved with multiple open-works, and utilize conductive metallic material conducting N electrode and P electrode, make described N electrode form a N contact electrode through corresponding open-work and described n type gallium nitride layer (N-GaN), described P electrode is through corresponding open-work and described transparency conducting layer and reflector and described P type gallium nitride layer (P-GaN) formation one P contact electrode, the number of described open-work quantity is used for adjusting electric current, described n type gallium nitride layer (N-GaN) and described P type gallium nitride layer (P-GaN) are after contacting with described multi-layer quantum well (MQWS) and conducting, the light that described multi-layer quantum well (MQWS) is produced is through the reflection in described reflector, according to refraction principle by from all directions by launching everywhere.
In the above technical scheme of the present invention, described conductive metallic material is chromium (Cr), aluminium (Al), titanium (Ti), gold (Au).
Adopt technique scheme, in light emitting device group body of the present invention, insulating barrier is at least arrived to N shape gallium nitride layer from transparency conducting layer and reflector extension, to guarantee in a glue process, avoid silver (Ag) glue to be communicated with P-N, reduce the crisis of short circuit, and can be the structure that homonymy is arranged by N electrode and P electrode wherein, simplify the operation of the associated components of light-emitting component on making in conjunction with enforcement and chip package, and can really promote effective light-emitting zone of light-emitting component, and increased the degree of adhering to of insulating barrier by the anisotropic etching of n type gallium nitride layer wherein, to reach desired thickness, prevent the generation of short circuit, make light-emitting diode (Light Emitting Diode, LED) qualification rate improves.
Brief description of the drawings
Fig. 1 is the schematic cross-section of existing light-emitting component;
Fig. 2 is the schematic top plan view of light-emitting component of the present invention;
Fig. 3 is the A-A schematic cross-section (insulating barrier reaches N-GAN layer, and N electrode and P electrode extend to N-GAN layer) of Fig. 2;
Fig. 4 is that light-emitting component of the present invention is not in conjunction with the schematic top plan view with N electrode and P electrode;
Fig. 5 is another better enforcement sectional view (insulating barrier extension reaches U-GAN layer) of light-emitting component of the present invention;
Fig. 6 a is the N electrode of light-emitting component of the present invention and the enforcement state () of P electrode;
Fig. 6 b is the N electrode of light-emitting component of the present invention and the enforcement state (two) of P electrode;
Fig. 6 c is the N electrode of light-emitting component of the present invention and the enforcement state (three) of P electrode.
Embodiment
Now lift following examples and by reference to the accompanying drawings structure of the present invention and effect be elaborated.
Light-emitting component provided by the present invention is as shown in Fig. 2～Fig. 6, as shown in Figure 3, light-emitting component 9 comprises: a substrate 1, on substrate 1, be combined with that both sides is to tilt and on U-shaped gallium nitride layer (U-GaN) 21 and n type gallium nitride layer (N-GaN) 2, and be combined with multi-layer quantum well (MQWS) 3 at the default paragraph of n type gallium nitride layer (N-GaN) 2, in multi-layer quantum well (MQWS) 3 tops separately in conjunction with a P type gallium nitride layer (P-GaN) 4, and on P type gallium nitride layer (P-GaN) 4, be combined with transparency conducting layer (material using as: ITO(indium tin oxide), GZO(zinc-gallium oxide) etc.) and the reflector 5(material that uses as aluminium (Al), silver (Ag), DBR(Bragg mirror) etc.), the material again the insulating barrier 6(of a preset thickness being used is as silicon dioxide etc.) cover transparency conducting layer and reflector 5, and at least extend to n type gallium nitride layer (N-GaN) 2(as shown in Figure 3), or extend to the intersection better (as shown in Figure 5) of U-shaped gallium nitride layer (U-GaN) and substrate 1, so that P type gallium nitride layer (P-GaN) 4 and multi-layer quantum well (MQWS) 3 are coated, at the multiple open-works 61 of the both sides of the insulating barrier 6 each formation in default position, 62, above insulating barrier 6, both sides is each in conjunction with N electrode 7 and P electrode 8, and by multiple open-works 61 of corresponding site, 62 utilize chromium (Cr), aluminium (Al), titanium (Ti), conductive metallic material conducting N electrode 7 and the P electrodes 8 such as gold (Au), make N electrode 7 form a N contact electrode 71 through corresponding open-work 61 and n type gallium nitride layer (N-GaN) 2, P electrode 8 is through corresponding open-work 62 and transparency conducting layer and reflector 5, P type gallium nitride layer (P-GaN) 4 forms a P contact electrode 81, after conducting with contacting of multi-layer quantum well (MQWS) 3 with P type gallium nitride layer (P-GaN) 4 by n type gallium nitride layer (N-GaN) 2, the light that multi-layer quantum well (MQWS) 3 is produced is via the reflection in reflector, utilize refraction principle by from all directions by launching (being to be penetrated by orientation substrate mostly) everywhere.
As Fig. 2, Fig. 3, shown in Fig. 5 and Fig. 6 a～Fig. 6 c, the manufacture method of light-emitting component 9 of the present invention is: adopt etching mode formation to be combined in the U-shaped gallium nitride layer (U-GaN) 21 and n type gallium nitride layer (N-GaN) 2 of substrate 1 top, both sides aspect on to form an inclination, and the default paragraph of n type gallium nitride layer (N-GaN) 2 be sequentially combined with slightly tilt and on multi-layer quantum well (MQWS) 3, P type gallium nitride layer (P-GaN) 4 and a transparency conducting layer and reflector 5, afterwards, again along the effect aspect in transparency conducting layer and reflector 5, cover the insulating barrier 6 of a preset thickness and at least extend to n type gallium nitride layer (N-GaN) 2(as shown in Figure 3 with P type gallium nitride layer (P-GaN) 4 and the both sides of multi-layer quantum well (MQWS) 3), or extend to the intersection better (as shown in Figure 5) of U-shaped gallium nitride layer (U-GaN) 21 and substrate 1, the both sides that insulating barrier 6 can be formed by n type gallium nitride layer (N-GaN) 2 tilt and on aspect obtain the enough power that covers, easily reach required thickness.Default position, both sides at insulating barrier 6 is respectively reserved with multiple open-works 61,62, to utilize conductive metallic material conducting N electrode 7 and the P electrodes 8 such as chromium (Cr), aluminium (Al), titanium (Ti), gold (Au), and must keep one section of non-contact area 91 between N electrode 7 and P electrode 8.And the insulating barrier 6 that reaches preset thickness can avoid n type gallium nitride layer (N-GaN) 2 and P type gallium nitride layer (P-GaN) 4 to come in contact, and the short circuit causing because of silver (Ag) the glue conducting in a glue process, thereby by the disqualification rate reducing in producing.
The light-emitting component that adopts above-mentioned composition on the implementation tool has the following advantages:
1. light-emitting component adopts rectangular form to extend, and is conducive to N electrode and P electrode to be located at the both sides of insulating barrier, easily forms one section of non-contact area.
2. the n type gallium nitride layer (N-GaN) in light-emitting component and P type gallium nitride layer (P-GaN) remain on one and are subject to the space that insulating barrier definitely separates, to avoid, because silver (Ag) glue in a glue process contacts simultaneously, causing low qualification rate.
3. light emitting device group body, because N electrode and P electrode are wherein homonymy arrangement, therefore can be simplified the associated components of light-emitting component on making in conjunction with implementing and chip package operation.
4. light emitting device group body can utilize by reserved multiple open-works material conducting N electrode and the P electrodes such as chromium (Cr), aluminium (Al), titanium (Ti), gold (Au), and adjusts electric current by the number of open-work quantity.
5. when light emitting device group body can be conducive to die bond by the area of N electrode and P electrode development length, the conducting of degree of sticking together, to increase the degree of fixation of support, contributes to the heat conduction brightness of LED and the lifting of qualification rate.
Claims (8)
1. a light-emitting component, it comprises: a substrate, on described substrate, be combined with both sides be tilt and on U-shaped gallium nitride layer (U-GaN) and n type gallium nitride layer (N-GaN), and be combined with multi-layer quantum well (MQWS) at the default paragraph of described n type gallium nitride layer (N-GaN), separately in conjunction with a P type gallium nitride layer (P-GaN), on described P type gallium nitride layer (P-GaN), be combined with transparency conducting layer and reflector in described multi-layer quantum well (MQWS) top;
It is characterized in that: the insulating barrier of a preset thickness is covered on described transparency conducting layer and reflector, and extend to described n type gallium nitride layer (N-GaN) and locate;
Described insulating barrier is coated described P type gallium nitride layer (P-GaN) and described multi-layer quantum well (MQWS), at the multiple open-works of the both sides of the described insulating barrier each formation in default position, above described insulating barrier, both sides is respectively combined with N electrode and P electrode, and the multiple described open-work of corresponding site is utilized to conductive metallic material conducting N electrode and P electrode, and adjust electric current by the number of described open-work quantity; Described N electrode forms a N contact electrode through corresponding multiple described open-works and described n type gallium nitride layer (N-GaN), and the described P electrode corresponding described open-work of process and described transparency conducting layer and reflector, described P type gallium nitride layer (P-GaN) form a P contact electrode.
2. light-emitting component as claimed in claim 1, it is characterized in that: the N electrode in described light-emitting component and P electrode are combined in the both sides of described insulating barrier top, can extend to described n type gallium nitride layer (N-GaN) or described substrate, it extends the degree of sticking together when area is more large is more conducive to die bond.
3. light-emitting component as claimed in claim 1, is characterized in that: described conductive metallic material is chromium (Cr), aluminium (Al), titanium (Ti), gold (Au).
4. a light-emitting component, it comprises: a substrate, on described substrate, be combined with both sides be tilt and on U-shaped gallium nitride layer (U-GaN) and n type gallium nitride layer (N-GaN), and be combined with multi-layer quantum well (MQWS) at the default paragraph of described n type gallium nitride layer (N-GaN), separately in conjunction with a P type gallium nitride layer (P-GaN), and on described P type gallium nitride layer (P-GaN), be combined with transparency conducting layer and reflector in described multi-layer quantum well (MQWS) top;
It is characterized in that: the insulating barrier of a preset thickness is covered on described transparency conducting layer and reflector, and extend to described U-shaped gallium nitride layer (U-GaN) and locate;
Described insulating barrier is by coated to described P type gallium nitride layer (P-GaN) and described multi-layer quantum well (MQWS), at the multiple open-works of the both sides of the described insulating barrier each formation in default position, above described insulating barrier, both sides is respectively combined with N electrode and P electrode, and the multiple described open-work of corresponding site is utilized to conductive metallic material conducting N electrode and P electrode, and utilize the number of described open-work quantity to adjust electric current; Described N electrode forms a N contact electrode by corresponding multiple described open-works and described n type gallium nitride layer (N-GaN), and described P electrode is by corresponding described open-work and described transparency conducting layer and reflector, described P type gallium nitride layer (P-GaN) formation one P contact electrode.
5. light-emitting component as claimed in claim 4, it is characterized in that: the N electrode in described light-emitting component and P electrode are combined in the both sides of described insulating barrier top, can extend to described n type gallium nitride layer (N-GaN) or described substrate, it extends the degree of sticking together when area is more large is more conducive to die bond.
6. light-emitting component as claimed in claim 4, is characterized in that: described conductive metallic material is chromium (Cr), aluminium (Al), titanium (Ti), gold (Au).
7. the manufacture method of a light-emitting component, it is characterized in that: adopt etching mode to form the n type gallium nitride layer (N-GaN) that is combined in substrate top, both sides aspect on to form an inclination, and the default paragraph of described n type gallium nitride layer (N-GaN) be sequentially combined with slightly tilt and on multi-layer quantum well (MQWS), P type gallium nitride layer (P-GaN) and transparency conducting layer and reflector, afterwards, along the effect aspect in described transparency conducting layer and reflector, cover the insulating barrier of a preset thickness and extend to described n type gallium nitride layer (N-GaN) and the intersection of described substrate with described P type gallium nitride layer (P-GaN) and the both sides of described multi-layer quantum well (MQWS), the both sides that described insulating barrier can form by described n type gallium nitride layer (N-GaN) tilt and on aspect obtain the enough power that covers, reach required thickness, default position, both sides at described insulating barrier is respectively reserved with multiple open-works, and utilize conductive metallic material conducting N electrode and P electrode, make described N electrode form a N contact electrode through corresponding open-work and described n type gallium nitride layer (N-GaN), described P electrode is through corresponding open-work and described transparency conducting layer and reflector and described P type gallium nitride layer (P-GaN) formation one P contact electrode, the number of described open-work quantity is used for adjusting electric current,
Described n type gallium nitride layer (N-GaN) and described P type gallium nitride layer (P-GaN) are after contacting with described multi-layer quantum well (MQWS) and conducting, the light that described multi-layer quantum well (MQWS) is produced is through the reflection in described reflector, according to refraction principle by from all directions by launching everywhere.
8. the manufacture method of light-emitting component as claimed in claim 7, is characterized in that: described conductive metallic material is chromium (Cr), aluminium (Al), titanium (Ti), gold (Au).
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| CN105633240A (en) * | 2016-03-17 | 2016-06-01 | 厦门乾照光电股份有限公司 | CSP package chip structure and fabrication method thereof |
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| CN105655458B (en) * | 2016-03-17 | 2019-06-04 | 厦门乾照光电股份有限公司 | A kind of increase light-emitting area LED chip structure and production method |
| CN109216399A (en) * | 2018-09-29 | 2019-01-15 | 华南理工大学 | Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof |
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