CN106025010A - Flip LED chip based on conductive DBR structure and manufacturing method thereof - Google Patents
Flip LED chip based on conductive DBR structure and manufacturing method thereof Download PDFInfo
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- CN106025010A CN106025010A CN201610567047.5A CN201610567047A CN106025010A CN 106025010 A CN106025010 A CN 106025010A CN 201610567047 A CN201610567047 A CN 201610567047A CN 106025010 A CN106025010 A CN 106025010A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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Abstract
The invention discloses a flip LED chip based on a conductive DBR structure and a manufacturing method thereof. A buffer layer, an N-GaN layer, an active layer and a P-GaN layer are sequentially grown on a substrate. The active layer and the P-GaN layer are etched to form a step and to expose part of the N-GaN layer. A DBR conductive reflection layer and a metal reflection layer are sequentially formed on the step of the P-GaN layer. An N metal conductive layer and a current expansion bar are arranged in the exposed portion of the N-GaN layer. An insulating layer is formed on the metal reflective layer and on the exposed portions of the N metal conductive layer and the N-GaN layer. Multiple through holes are formed on the insulating layer. A P eutectic layer and an N eutectic layer are formed on the insulating layer. The P eutectic layer is connected with the metal conductive layer via the through holes, and the N eutectic layer is connected with the N metal conductive layer via the through holes. The insulating layer isolates the N metal conductive layer from the P eutectic layer, and isolates the DBR conductive reflection layer from the N eutectic layer. The light emitting reliability of light-emitting diode products is improved, and the process difficulty and manufacture cost are reduced.
Description
Technical field
The present invention relates to emitting LED chip technical field, a kind of flip LED chips based on conduction dbr structure and preparation method thereof.
Background technology
In order to avoid in packed LED chip because electrode ties up light-emitting area thus affects luminous efficiency, chip research staff devises the chip of inverted structure, i.e. formal dress chip upside down, the light making luminescent layer inspire i.e. sends from transparent substrate from the back side of chip, meanwhile, go out to facilitate LED to encapsulate the wire bond structure of exempting from of factory for flip-chip design, thus, whole chip is referred to as flip-chip (FlipChip), and this structure is more using in high-power chip.The advantage of flip LED chips is: one is the diffusion of whole of P electrode current, can lead to big electric current and use；Two is that size can be accomplished less, and optics is easier to coupling；Three is not dispelled the heat by Sapphire Substrate, and the life-span of chip is improved；Four is the lifting of antistatic effect；Five is to lay the first stone for subsequent encapsulating process development.But existing flip LED chips there is also following shortcoming:
The light of LED flip chip needs to take out from the back side; in order to improve the extraction efficiency of light; the reflecting layer of light is all done in the front of chip; reflector material is divided into two kinds; a kind of flip LED chips uses Ag as reflecting layer; Ag has higher reflectance and can conduct electricity; but owing to Ag atom is easier to diffusion; ease and the reliability of technique are affected by certain; another kind of flip LED chips uses the DBR of insulation as reflecting layer, and this structure generally also needs to add ITO layer (indium tin oxide transparent conductive semiconductor film) on P layer surface increases the diffusion of electric current.ITO introduces the absorption to light and process complexity increased.
In view of this, the present inventor, for overcoming drawbacks described above, proposes a kind of flip LED chips based on conduction dbr structure and preparation method thereof, and this case thus produces.
Summary of the invention
It is an object of the invention to provide a kind of flip LED chips based on conduction dbr structure and preparation method thereof, to improve the luminous reliability of light emitting diode product, reduce technology difficulty and cost of manufacture.
To achieve these goals, technical scheme is as follows:
A kind of flip LED chips based on conduction dbr structure, grown buffer layer, N-GaN layer, active layer and P-GaN layer successively on substrate, active layer and P-GaN layer etching form step and by exposed for N-GaN layer segment, P-GaN layer step sequentially forms DBR conductive reflective and metallic reflector, exposed part at N-GaN layer arranges N metal conducting layer and current expansion bar, forms insulating barrier above metallic reflector and above N metal conducting layer and N-GaN layer exposed part；
Some through holes are formed on described insulating barrier, it is respectively provided with P layer gold altogether and N layer gold altogether on the insulating layer, P layer gold altogether is connected with metallic reflector by through hole, N layer gold altogether is connected with N metal conducting layer by through hole, insulating barrier is by N metal conducting layer and P layer gold isolation altogether, by DBR conductive reflective and N layer gold isolation altogether.
Described DBR conductive reflective is by can alternately form by conductive transparent material film layer, and this can conductive transparent material can be ITO or TiN.
Described insulating barrier is by insulating dbr structure or monolayer insulating layer is constituted, and the material constituting insulation dbr structure or monolayer insulating layer can be SiO2, Si3N4Or TiO2。
The manufacture method of a kind of flip LED chips based on conduction dbr structure, comprises the following steps:
Step one, substrate uses grow cushion, N-GaN layer, active layer and P-GaN layer successively；
Step 2, employing ICP etch step on active layer and P-GaN layer, expose the N-GaN layer below P-GaN layer；
Step 3, by evaporation and be etched in above P-GaN layer and sequentially form DBR conductive reflective and metallic reflector, above the exposed part of N-GaN layer, form N metal conducting layer and current expansion bar；
Step 4, above metallic reflector and above N metal conducting layer and N-GaN layer exposed part, it is deposited with insulating barrier；
Step 5, etching some through holes on the insulating layer, one of which through hole leads to the metallic reflector being positioned at above P-GaN layer, and one group of through hole leads to the N metal conducting layer above N-GaN layer；
Step 6, forming P altogether layer gold and N layer gold altogether in the way of stripping on the insulating layer, wherein P layer gold altogether is connected with metallic reflector by the through hole of insulating barrier, and N is total to layer gold to be passed through the through hole of insulating barrier and be connected with N metal conducting layer.
After using such scheme, the invention have the advantages that
1, current-diffusion layer and reflection layer are united two into one by the flip LED chips of the present invention, use DBR conductive reflective and metallic reflector is the most electrically conductive and reflection, in structure simply, technique ease improves, and is different from traditional LED chip structure separated by current-diffusion layer with reflection layer；
2, the present invention the most directly uses Ag or other metals as conductive reflective, reduces and is migrated, by metal, the LED failure caused, adds the luminous reliability of chip.
3, by the appropriate design of the structural membrane system to DBR conductive reflective, can reach higher reflectance increases extraction efficiency and the more effective current spreading effect increase current injection efficiency of light,
In a word, the flip LED chips production procedure of the present invention is the simplest, and cost is relatively low, and luminous efficiency is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of present invention flip LED chips based on conduction dbr structure；
Fig. 2 is present invention structural representation of intermediate member when making；
Fig. 3 is that another kind of the present invention implements structural representation.
Label declaration
Substrate 1, cushion 2, N-GaN layer 3, active layer 4, P-GaN layer 5, DBR conductive reflective 6, metallic reflector 7, N metal conducting layer and current expansion bar 8, insulating barrier 9, through hole 91, P layer gold 10 altogether, N layer gold 11 altogether.
Detailed description of the invention
As shown in Figure 1, a kind of based on conduction dbr structure the flip LED chips that the present invention discloses, grown buffer layer 2, N-GaN layer 3, active layer 4 and P-GaN layer 5 the most successively, active layer and P-GaN layer etching form step and by exposed for N-GaN layer segment, P-GaN layer step sequentially forms DBR conductive reflective 6 and metallic reflector 7, exposed part at N-GaN layer arranges N metal conducting layer and current expansion bar 8, forms insulating barrier 9 above metallic reflector 7 and above N metal conducting layer 8 and N-GaN layer 3 exposed part；
Some through holes 91 are formed on described insulating barrier 9, insulating barrier 9 is respectively provided with P layer gold 10 and N layer gold 11 altogether altogether, P layer gold 10 altogether is connected with metallic reflector 7 by through hole 91, N layer gold 11 altogether is connected with N metal conducting layer 8 by through hole, N metal conducting layer 8 is isolated by insulating barrier 9 with P layer gold 10 altogether, DBR conductive reflective 6 is isolated with N layer gold 11 altogether.
Described DBR conductive reflective 6 is by can alternately form by conductive transparent material film layer, and this can conductive transparent material can be ITO or TiN
Described insulating barrier 9 is made up of insulation dbr structure or monolayer insulating layer, and the material constituting insulation dbr structure or monolayer insulating layer can be SiO2, Si3N4Or TiO2。
As shown in Figure 3, the another kind of enforcement structure that the present invention discloses, on the basis of above-mentioned flip LED chips, lighting requirements according to LED chip, the numbers of steps etched can increase, insulating barrier above a step offers through hole 91 wherein, this through hole arranges P layer gold 10 altogether, wherein in the middle of two steps, N metal conducting layer and current expansion bar 8 are set, N metal conducting layer 8 through hole opened above 91, this through hole arranges N layer gold 11 altogether, it is achieved current spread, DBR conductive reflective 6 and metallic reflector 7 that each step sequentially forms reflect light.
The manufacture method of a kind of flip LED chips based on conduction dbr structure, comprises the following steps:
Step one, use and grow cushion 2, N-GaN layer 3, active layer 4 and P-GaN layer 5 successively on substrate 1；
Step 2, employing ICP etch step on active layer 4 and P-GaN layer 5, expose the N-GaN layer 3 below P-GaN layer 5, and after etching step, structure is as shown in Figure 2；
Step 3, by evaporation and be etched in above P-GaN layer 5 and sequentially form DBR conductive reflective 6 and metallic reflector 7, above the exposed part of N-GaN layer 3, form N metal conducting layer and current expansion bar 8；N metal conducting layer shown in figure and current expansion bar 8 are N metal conducting layer and the sketch of current expansion bar combination, therefore label 8 can also refer to N metal conducting layer；
Step 4, above metallic reflector 7 and above N metal conducting layer 8 and N-GaN layer 3 exposed part be deposited with insulating barrier 9；
Step 5, etching some through holes 91 on insulating barrier 9, one of them through hole leads to the metallic reflector 6 being positioned at above P-GaN layer 5, and a through hole leads to the N metal conducting layer 8 above N-GaN layer 3；
Step 6, forming P altogether layer gold 10 and N layer gold 11 altogether by evaporation and etching on insulating barrier 9, wherein P layer gold 10 altogether is connected with metallic reflector 7 by the through hole 91 of insulating barrier, and the N through hole 91 that layer gold 11 passes through insulating barrier altogether is connected with N metal conducting layer 8.
These are only the specific embodiment of the present invention, the not restriction to protection scope of the present invention.All equivalent variations done according to the mentality of designing of this case, each fall within the protection domain of this case.
Claims (4)
1. a flip LED chips based on conduction dbr structure, it is characterized in that: grown buffer layer, N-GaN layer, active layer and P-GaN layer successively on substrate, active layer and P-GaN layer etching form step and by exposed for N-GaN layer segment, P-GaN layer step sequentially forms DBR conductive reflective and metallic reflector, exposed part at N-GaN layer arranges N metal conducting layer and current expansion bar, forms insulating barrier above metallic reflector and above N metal conducting layer and N-GaN layer exposed part；
Some through holes are formed on described insulating barrier, it is respectively provided with P layer gold altogether and N layer gold altogether on the insulating layer, P layer gold altogether is connected with metallic reflector by through hole, N layer gold altogether is connected with N metal conducting layer by through hole, insulating barrier is by N metal conducting layer and P layer gold isolation altogether, by DBR conductive reflective and N layer gold isolation altogether.
A kind of flip LED chips based on conduction dbr structure, it is characterised in that: described DBR conductive reflective is by can alternately form by conductive transparent material film layer, and this can conductive transparent material can be ITO or TiN.
A kind of flip LED chips based on conduction dbr structure, it is characterised in that: described insulating barrier is by insulating dbr structure or monolayer insulating layer is constituted, and the material constituting insulation dbr structure or monolayer insulating layer can be SiO2, Si3N4Or TiO2。
4. the manufacture method of a flip LED chips based on conduction dbr structure, it is characterised in that comprise the following steps:
Step one, substrate uses grow cushion, N-GaN layer, active layer and P-GaN layer successively；
Step 2, employing ICP etch step on active layer and P-GaN layer, expose the N-GaN layer below P-GaN layer；
Step 3, by evaporation and be etched in above P-GaN layer and sequentially form DBR conductive reflective and metallic reflector, above the exposed part of N-GaN layer, form N metal conducting layer and current expansion bar；
Step 4, above metallic reflector and above N metal conducting layer and N-GaN layer exposed part, it is deposited with insulating barrier；
Step 5, etching some through holes on the insulating layer, one of which through hole leads to the metallic reflector being positioned at above P-GaN layer, and one group of through hole leads to the N metal conducting layer above N-GaN layer；
Step 6, forming P altogether layer gold and N layer gold altogether in the way of stripping on the insulating layer, wherein P layer gold altogether is connected with metallic reflector by the through hole of insulating barrier, and N is total to layer gold to be passed through the through hole of insulating barrier and be connected with N metal conducting layer.
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Cited By (9)
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| CN106997917A (en) * | 2017-05-08 | 2017-08-01 | 珠海市芯半导体科技有限公司 | A kind of LED flip chip and preparation method thereof |
| CN108461583A (en) * | 2018-02-05 | 2018-08-28 | 广东省半导体产业技术研究院 | A kind of production method of UV LED chip |
| CN108649107A (en) * | 2018-05-11 | 2018-10-12 | 河源市众拓光电科技有限公司 | A kind of LED chip and preparation method thereof of the ultraviolet through-hole structure of Multifunctional reflective mirror |
| CN109638131A (en) * | 2018-11-30 | 2019-04-16 | 广东德力光电有限公司 | A kind of production method of DBR flip-chip |
| WO2019169755A1 (en) * | 2018-03-08 | 2019-09-12 | 昆山工研院新型平板显示技术中心有限公司 | Micro-led chip, display screen and preparation method therefor |
| US10861834B2 (en) | 2018-03-08 | 2020-12-08 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | Micro-LED chips, display screens and methods of manufacturing the same |
| CN112331753A (en) * | 2020-11-06 | 2021-02-05 | 业成科技（成都）有限公司 | Light emitting diode structure |
| CN113451477A (en) * | 2021-07-14 | 2021-09-28 | 业成科技（成都）有限公司 | Light emitting diode and display |
| WO2022177998A1 (en) * | 2021-02-17 | 2022-08-25 | Meta Platforms Technologies, Llc | Self-aligned ito dbr based p-contact for small pitch micro-led |
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| CN106997917A (en) * | 2017-05-08 | 2017-08-01 | 珠海市芯半导体科技有限公司 | A kind of LED flip chip and preparation method thereof |
| CN108461583A (en) * | 2018-02-05 | 2018-08-28 | 广东省半导体产业技术研究院 | A kind of production method of UV LED chip |
| CN108461583B (en) * | 2018-02-05 | 2019-11-08 | 广东省半导体产业技术研究院 | A kind of production method of UV LED chip |
| WO2019169755A1 (en) * | 2018-03-08 | 2019-09-12 | 昆山工研院新型平板显示技术中心有限公司 | Micro-led chip, display screen and preparation method therefor |
| CN110246931A (en) * | 2018-03-08 | 2019-09-17 | 昆山工研院新型平板显示技术中心有限公司 | A kind of Micro-LED chip, display screen and preparation method |
| US10861834B2 (en) | 2018-03-08 | 2020-12-08 | Kunshan New Flat Panel Display Technology Center Co., Ltd. | Micro-LED chips, display screens and methods of manufacturing the same |
| CN108649107A (en) * | 2018-05-11 | 2018-10-12 | 河源市众拓光电科技有限公司 | A kind of LED chip and preparation method thereof of the ultraviolet through-hole structure of Multifunctional reflective mirror |
| CN109638131A (en) * | 2018-11-30 | 2019-04-16 | 广东德力光电有限公司 | A kind of production method of DBR flip-chip |
| CN112331753A (en) * | 2020-11-06 | 2021-02-05 | 业成科技（成都）有限公司 | Light emitting diode structure |
| WO2022177998A1 (en) * | 2021-02-17 | 2022-08-25 | Meta Platforms Technologies, Llc | Self-aligned ito dbr based p-contact for small pitch micro-led |
| US11569414B2 (en) | 2021-02-17 | 2023-01-31 | Meta Platforms Technologies, Llc | Self-aligned ITO DBR based p-contact for small pitch micro-LED |
| CN113451477A (en) * | 2021-07-14 | 2021-09-28 | 业成科技（成都）有限公司 | Light emitting diode and display |
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Application publication date: 20161012 |