CN106997917A - A kind of LED flip chip and preparation method thereof - Google Patents
A kind of LED flip chip and preparation method thereof Download PDFInfo
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- CN106997917A CN106997917A CN201710318359.7A CN201710318359A CN106997917A CN 106997917 A CN106997917 A CN 106997917A CN 201710318359 A CN201710318359 A CN 201710318359A CN 106997917 A CN106997917 A CN 106997917A
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- 238000002360 preparation method Methods 0.000 title claims description 16
- 229910000679 solder Inorganic materials 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000605 extraction Methods 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000004411 aluminium Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical group 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- -1 aluminium gold Chemical compound 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000000284 extract Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED flip chip, including LED flip chip main body, ODR structures are all covered with the P-type conduction region of LED flip chip main body solder side and N-type conductive region and flip-chip main body non-solder face region, ODR structures extract light extraction using omnidirectional reflection；ODR structures include luminescent layer and in the DBR reflecting layer or the first insulating barrier that are stacked gradually on luminescent layer, metallic reflector, the second insulating barrier.The LED flip chip carries out omnidirectional reflection extraction light extraction using ODR structures, compared with the flip chip structure of prior art, the LED flip chip of the present invention produces light reflection to the P-type conduction region and N-type conductive region of the non-solder face of chip and the solder side of traditional non-light extraction, energy is comprehensively and full angle produces reflecting light, luminous efficiency is higher, conductive and heat-conductive effect more preferably, while reflective metal layer and electrode layer can together with processing and fabricating, technique simple possible.
Description
Technical field
It is especially a kind of that there is omnidirectional reflection light extraction knot the present invention relates to a kind of LED chip structure and preparation method thereof
LED flip chip of structure and preparation method thereof.
Background technology
At present, metallic reflector can provide that wideband is wide and high reflection of wide-angle in visible light wave range, but metal
Mechanism lossy They；And Bragg reflecting layer (Distributed Bragg reflector abbreviation DBR) is dieletric reflection
Structure, can be considered that 1-D photon crystal prohibits Tapes (photonic gap) there is provided photon, when incidence wave paragraph is in this photon taboo Tapes
Inner will be totally reflected, and will not produce loss, but DBR reflectivity is relevant with incident angle, with incident angle
Increase, photon, which prohibits Tapes, to be drifted about towards high frequency, and reduce reflectivity.Therefore DBR catoptric arrangements and metallic reflector knot are combined
The omnidirectional reflection layer (Omnidirectional reflector abbreviation ODR) of structure) a lossless mechanism can be provided and had
The reflecting spectrum that one wideband is wide and full angle is incident.
Existing flip-chip typically individually uses metallic reflection Rotating fields using DBR reflection layer structures or individually.Individually
With the flip-chip of DBR reflection layer structures, as shown in figure 5, structure includes electrode 8, DBR reflecting layer 3, luminescent layer 4（Luminescent layer bag
Containing structures such as substrate, epitaxial layer, transparency electrodes）.Individually using the flip-chip of metallic reflection Rotating fields, as shown in fig. 6, structure
Including electrode 8, metallic reflector 9, luminescent layer 4, insulating barrier 10.Due to each by reflection angle limited and can not efficiently by
The light that LED is produced reflects chip, and the manufacture of catoptric arrangement is separated with the manufacture of electrode, and technics comparing is cumbersome.
With the present invention be closer to be Publication No. CN 104037295A Chinese patent, the patent provides one kind
Dielectric reflective layer adds the flip chip structure of metallic reflector.This light reflection structure is located at the transparency conducting layer in p-type GaN layer region
On, light reflection is carried out just in chip P-type conduction region, and can not be to the N-type conductive regions of chip N-type GaN exposed layers
Light reflection is carried out, so the whole lighting efficiency of chip is not ideal.
The content of the invention
It is an object of the invention to the shortcoming and defect for solving above-mentioned prior art there is provided a kind of LED flip chip, it is somebody's turn to do
LED flip chip carries out omnidirectional reflection extraction light extraction using ODR structures, compared with the flip chip structure of prior art, this
P-type conduction region and N-type conduction region of the LED flip chip of invention to the non-solder face of chip and the solder side of traditional non-light extraction
Domain produces light reflection, and energy is comprehensively and full angle produces reflecting light, and luminous efficiency is higher, and conductive and heat-conductive effect is more preferable, simultaneously
Reflective metal layer and electrode layer can together with processing and fabricating, technique simple possible.
The present invention solve its technical problem use technical scheme for：A kind of LED flip chip, including LED flip chip
Main body, in the P-type conduction region of LED flip chip main body solder side and N-type conductive region and flip-chip main body non-solder face
Region is all covered with ODR structures, and ODR structures extract light extraction using omnidirectional reflection；Described ODR structures include luminescent layer and in
The DBR reflecting layer stacked gradually on luminescent layer or the first insulating barrier, metallic reflector, the second insulating barrier.
Further, in metal electrode structure can also be deposited on the second insulating barrier.
Further, described DBR reflecting layer or the first thickness of insulating layer are 10-10000nm, and metallic reflector thickness is
1-1000nm, the second thickness of insulating layer is 10-10000nm, and metal electrode structure thickness is 1-10000nm.
Further, described DBR reflecting layer are that at least one of silica, titanium oxide and aluminum oxide composition are many
In the multi-layer compound structure of double-layer structure.
Further, the first described insulating barrier and the second insulating barrier are insulating layer of silicon oxide or silicon nitride dielectric layer.
Further, described metallic reflector is constructed of aluminium reflecting layer or silver metallic structure reflecting layer.
Further, described metallic reflector is using aluminum metal and the laminated construction of golden metal.
Further, described metal electrode structure is golden structure electrode or constructed of aluminium electrode.
It is in addition, the invention further relates to the preparation method of LED flip chip, the step of the preparation method：In LED upside-down mounting cores
The P-type conduction region of piece main body solder side and N-type conductive region and the luminous layer surface in flip-chip main body non-solder face region
Growth DBR reflecting layer or the first insulating barrier, metallic reflector, redeposited second insulating barrier, expose by graphical treatment successively
Go out metal electrode structure, form LED flip chip；Or it is P-type conduction region and the N of LED flip chip main body solder side
The luminous layer surface in type conductive region and flip-chip main body non-solder face region grows DBR reflecting layer or the first insulation successively
Layer, metallic reflector, redeposited second insulating barrier, are deposited layer of metal electrode structure again, form LED flip chip.
Or, the preparation method of the LED flip chip can also use following steps：It is that LED flip chip main body is welded
The luminous layer surface in the P-type conduction region in face and N-type conductive region and flip-chip main body non-solder face region passes sequentially through gas
Mutually deposition makes DBR reflecting layer or the first insulating barrier, evaporation or jet-plating metallization reflecting layer, redeposited second insulating barrier, by figure
Shapeization processing exposes metal electrode structure, forms LED flip chip；Or it is the p-type of LED flip chip main body solder side
The luminous layer surface in conductive region and N-type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition system
Make DBR reflecting layer or the first insulating barrier, evaporation or jet-plating metallization reflecting layer, redeposited second insulating barrier, by graphical treatment
Layer of metal electrode structure is deposited again afterwards, LED flip chip is formed.
In summary, LED flip chip of the invention carries out omnidirectional reflection extraction light extraction using ODR structures, and existing
The flip chip structure of technology is compared, and LED flip chip of the invention is to the non-solder face of chip and the welding of traditional non-light extraction
The P-type conduction region in face and N-type conductive region produce light reflection, can comprehensive and full angle generation reflecting light, luminous efficiency
It is higher, conductive and heat-conductive effect more preferably, while reflective metal layer and electrode layer can together with processing and fabricating, technique simple possible.
Brief description of the drawings
Below in conjunction with the accompanying drawings, and by reference to following detailed description, the present invention will be better understood and its advantage is understood
And feature, accompanying drawing be used for illustrate the present invention, be not intended to limit the present invention；Representing the accompanying drawing of structure may be not necessarily drawn to scale；And
And, in accompanying drawing, same or similar element indicates same or similar label：
Fig. 1 is the schematic diagram of the ODR structures of the embodiment of the present invention 1 and the LED flip chip of example 3；
Fig. 2 is the schematic diagram of the ODR structures of the LED flip chip of the embodiment of the present invention 2；
Fig. 3 is the schematic diagram of the ODR structures of the LED flip chip of the embodiment of the present invention 4；
Fig. 4 is the schematic diagram of the ODR structures of the LED flip chip of the embodiment of the present invention 5；
Fig. 5 is the schematic diagram of the traditional dbr structure of LED flip chip of prior art；
Fig. 6 is the schematic diagram of the conventional metals reflection layer structure of prior art.
Embodiment
Embodiment 1
A kind of LED flip chip described described in the present embodiment 1, including LED flip chip main body, in LED flip chip main body
The P-type conduction region of solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures,
ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 1.ODR structures include luminescent layer 4 and in heap successively on luminescent layer
Folded DBR reflecting layer 3, constructed of aluminium reflecting layer 2, silicon nitride dielectric layer 5.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, evaporation constructed of aluminium reflecting layer, then the silicon nitride dielectric layer that is vapor-deposited, constructed of aluminium electrode, shape are exposed by graphical treatment
Into LED flip chip.
Embodiment 2
A kind of LED flip chip described described in the present embodiment 2, including LED flip chip main body, in LED flip chip main body
The P-type conduction region of solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures,
ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 2.ODR structures include luminescent layer 4 and in heap successively on luminescent layer
Folded DBR reflecting layer 3, constructed of aluminium reflecting layer 2, the first insulating layer of silicon oxide 6.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, evaporation constructed of aluminium reflecting layer, redeposited insulating layer of silicon oxide exposes constructed of aluminium electrode by graphical treatment, forms LED
Flip-chip.
Embodiment 3
A kind of LED flip chip described described in the present embodiment 3, including LED flip chip main body, in LED flip chip main body
The P-type conduction region of solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures,
ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 1.ODR structures include luminescent layer 4 and in heap successively on luminescent layer
Folded DBR reflecting layer 3, constructed of aluminium reflecting layer 2, silicon nitride dielectric layer 5.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, sputter constructed of aluminium reflecting layer, redeposited silicon nitride dielectric layer exposes constructed of aluminium electrode by graphical treatment, forms LED
Flip-chip.
Embodiment 4
A kind of LED flip chip described by the present embodiment 4, including LED flip chip main body, in the weldering of LED flip chip main body
The P-type conduction region of junction and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures, ODR
Structure extracts light extraction using omnidirectional reflection, as shown in Figure 3.ODR structures include luminescent layer 4 and in being stacked gradually on luminescent layer
DBR reflecting layer 3, constructed of aluminium reflecting layer 2, the first insulating layer of silicon oxide 6, golden structure electrode 1.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, sputter constructed of aluminium reflecting layer, redeposited insulating layer of silicon oxide, the gold evaporation structure electrode again after graphical treatment is formed
LED flip chip.
Embodiment 5
A kind of LED flip chip described by the present embodiment 5, including LED flip chip main body, in the weldering of LED flip chip main body
The P-type conduction region of junction and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures, ODR
Structure extracts light extraction using omnidirectional reflection, as shown in Figure 4.ODR structures include luminescent layer 4 and in being stacked gradually on luminescent layer
Second insulating layer of silicon oxide 7, constructed of aluminium reflecting layer 2, the first insulating layer of silicon oxide 6.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes the second oxidation
Silicon insulating barrier, evaporation constructed of aluminium reflecting layer, redeposited first insulating layer of silicon oxide exposes constructed of aluminium electricity by graphical treatment
Pole, forms LED flip chip.
The above described is only a preferred embodiment of the present invention, not making any formal to the structure of the present invention
Limitation.Any simple modification, equivalent variations and modification that every technical spirit according to the present invention is made to above example,
In the range of still falling within technical scheme.
Claims (10)
1. a kind of LED flip chip, including LED flip chip main body, it is characterised in that in LED flip chip main body solder side
P-type conduction region and N-type conductive region and flip-chip main body non-solder face region be all covered with ODR structures, ODR structures are adopted
Light extraction is extracted with omnidirectional reflection；Described ODR structures include luminescent layer and in the DBR reflecting layer stacked gradually on luminescent layer or
First insulating barrier, metallic reflector, the second insulating barrier.
2. a kind of LED flip chip according to claim 1, it is characterised in that in can be also deposited on the second insulating barrier
Metal electrode structure.
3. a kind of LED flip chip according to claim 2, it is characterised in that described DBR reflecting layer or the first insulation
Thickness degree is 10-10000nm, and metallic reflector thickness is 1-1000nm, and the second thickness of insulating layer is 10-10000nm, metal
Electrode structure thickness is 1-10000nm.
4. a kind of LED flip chip according to claim 2, it is characterised in that described DBR reflecting layer are titanium dioxide
Multi-layer compound structure of at least one of silicon, titanium oxide and aluminum oxide composition no less than double-layer structure.
5. a kind of LED flip chip according to claim 2, it is characterised in that the first described insulating barrier and second exhausted
Edge layer is insulating layer of silicon oxide or silicon nitride dielectric layer.
6. a kind of LED flip chip according to claim 2, it is characterised in that described metallic reflector is constructed of aluminium
Reflecting layer or silver metallic structure reflecting layer.
7. a kind of LED flip chip according to claim 2, it is characterised in that described metallic reflector uses aluminium gold
The laminated construction of category and golden metal.
8. a kind of LED flip chip according to claim 2, it is characterised in that described metal electrode structure is tied for gold
Structure electrode or constructed of aluminium electrode.
9. a kind of preparation method of LED flip chip according to claim 2, it is characterised in that be the step of the preparation method：
In the P-type conduction region of LED flip chip main body solder side and N-type conductive region and flip-chip main body non-solder face area
The luminous layer surface in domain grows DBR reflecting layer or the first insulating barrier, metallic reflector successively, and redeposited second insulating barrier passes through
Graphical treatment exposes metal electrode structure, forms LED flip chip；Or it is the P of LED flip chip main body solder side
The luminous layer surface in type conductive region and N-type conductive region and flip-chip main body non-solder face region grows DBR reflections successively
Layer or the first insulating barrier, metallic reflector, redeposited second insulating barrier, are deposited layer of metal electrode structure again, form LED upside-down mountings
Chip.
10. a kind of preparation method of LED flip chip according to claim 2, it is characterised in that the step of the preparation method
For：
It is the P-type conduction region and N-type conductive region and flip-chip main body non-solder face of LED flip chip main body solder side
The luminous layer surface in region passes sequentially through vapour deposition and makes DBR reflecting layer or the first insulating barrier, evaporation or jet-plating metallization reflection
Layer, redeposited second insulating barrier exposes metal electrode structure by graphical treatment, forms LED flip chip；Or be
The P-type conduction region of LED flip chip main body solder side and N-type conductive region and the hair in flip-chip main body non-solder face region
Photosphere surface passes sequentially through vapour deposition and makes DBR reflecting layer or the first insulating barrier, evaporation or jet-plating metallization reflecting layer, redeposited
Second insulating barrier, is deposited layer of metal electrode structure again after graphical treatment, forms LED flip chip.
Priority Applications (1)
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| CN201710318359.7A CN106997917A (en) | 2017-05-08 | 2017-05-08 | A kind of LED flip chip and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710318359.7A CN106997917A (en) | 2017-05-08 | 2017-05-08 | A kind of LED flip chip and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019054943A1 (en) * | 2017-09-15 | 2019-03-21 | Nanyang Technological University | Light-emitting device and method of forming the same |
| CN115050878A (en) * | 2022-07-27 | 2022-09-13 | 淮安澳洋顺昌光电技术有限公司 | Flip LED chip and preparation method thereof |
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2017
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| CN106025010A (en) * | 2016-07-19 | 2016-10-12 | 厦门乾照光电股份有限公司 | Flip LED chip based on conductive DBR structure and manufacturing method thereof |
| CN106252477A (en) * | 2016-10-31 | 2016-12-21 | 江苏新广联半导体有限公司 | The flip LED chips structure of a kind of compound completely reflecting mirror and manufacture method |
| CN206961863U (en) * | 2017-05-08 | 2018-02-02 | 珠海市一芯半导体科技有限公司 | A kind of LED flip chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019054943A1 (en) * | 2017-09-15 | 2019-03-21 | Nanyang Technological University | Light-emitting device and method of forming the same |
| CN115050878A (en) * | 2022-07-27 | 2022-09-13 | 淮安澳洋顺昌光电技术有限公司 | Flip LED chip and preparation method thereof |
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