CN206961863U - A kind of LED flip chip - Google Patents
A kind of LED flip chip Download PDFInfo
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- CN206961863U CN206961863U CN201720502276.9U CN201720502276U CN206961863U CN 206961863 U CN206961863 U CN 206961863U CN 201720502276 U CN201720502276 U CN 201720502276U CN 206961863 U CN206961863 U CN 206961863U
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Abstract
The utility model discloses a kind of LED flip chip, including LED flip chip main body, ODR structures are all covered with the P-type conduction region of LED flip chip main body solder side and N-type conductive region and flip-chip main body non-solder face region, ODR structures are using omnidirectional reflection extraction light extraction；ODR structures include luminescent layer and in stacked gradually on luminescent layer DBR reflecting layer or the first insulating barrier, metallic reflector, the second insulating barrier.The LED flip chip carries out omnidirectional reflection extraction light extraction using ODR structures, compared with the flip chip structure of prior art, LED flip chip of the present utility model produces light reflection to the non-solder face of chip with the P-type conduction region of the solder side of the non-light extraction of tradition and N-type conductive region, energy is comprehensively and full angle produces reflecting light, luminous efficiency is higher, conductive and heat-conductive effect is more preferable, at the same reflective metal layer and electrode layer can together with processing and fabricating, technique simple possible.
Description
Technical field
A kind of LED chip structure is the utility model is related to, especially a kind of LED with omnidirectional reflection light emitting structures falls
Cartridge chip.
Background technology
At present, metallic reflector can provide that wideband is wide and the high reflection of wide-angle in visible light wave range, but metal
Mechanism lossy They；And Bragg reflecting layer (Distributed Bragg reflector abbreviation DBR) is dieletric reflection
Structure, it can be considered 1-D photon crystal, there is provided photon prohibits Tapes (photonic gap), when incidence wave paragraph prohibits Tapes in this photon
Inner will be totally reflected, and will not produce loss, but DBR reflectivity is relevant with incident angle, with incident angle
Increase, photon, which prohibits Tapes, to be drifted about towards high frequency, and reduce reflectivity.Therefore combination DBR catoptric arrangements and metallic reflector knot
The omnidirectional reflection layer (Omnidirectional reflector abbreviation ODR) of structure) a lossless mechanism can be provided and had
The reflecting spectrum that one wideband is wide and full angle is incident.
Existing flip-chip typically individually uses DBR reflection layer structures or individually uses metallic reflection Rotating fields.Individually
With the flip-chip of DBR reflection layer structures, as shown in figure 5, structure includes electrode 8, DBR reflecting layer 3, luminescent layer 4（Luminescent layer bag
Containing structures such as substrate, epitaxial layer, transparency electrodes）.The flip-chip of metallic reflection Rotating fields is individually used, as shown in fig. 6, structure
Including electrode 8, metallic reflector 9, luminescent layer 4, insulating barrier 10.Due to each by reflection angle limited and can not efficiently by
Light caused by LED reflects chip, and the manufacture of catoptric arrangement separates with the manufacture of electrode, and technics comparing is cumbersome.
With the utility model be closer to be Publication No. CN 104037295A Chinese patent, the patent provides
A kind of dielectric reflective layer adds the flip chip structure of metallic reflector.This light reflection structure is located at transparent the leading in p-type GaN layer region
On electric layer, light reflection is carried out just in chip P-type conduction region, and can not be to the N-type conduction of chip N-type GaN exposed layers
Region carries out light reflection, so the whole lighting efficiency of chip is not ideal.
The content of the invention
The purpose of this utility model is solve the shortcomings that above-mentioned prior art and deficiency, there is provided a kind of LED flip chip,
The LED flip chip carries out omnidirectional reflection extraction light extraction using ODR structures, compared with the flip chip structure of prior art,
LED flip chip of the present utility model is to P-type conduction region and N-type of the non-solder face of chip with the solder side of the non-light extraction of tradition
Conductive region produces light reflection, and energy is comprehensively and full angle produces reflecting light, and luminous efficiency is higher, and conductive and heat-conductive effect is more
It is good, at the same reflective metal layer and electrode layer can together with processing and fabricating, technique simple possible.
The utility model solve technical scheme that its technical problem uses for：A kind of LED flip chip, including LED upside-down mountings
Chip body, in the P-type conduction region of LED flip chip main body solder side and N-type conductive region and the non-weldering of flip-chip main body
Connection surface zone is all covered with ODR structures, and ODR structures are using omnidirectional reflection extraction light extraction；Described ODR structures include luminescent layer
With in stacked gradually on luminescent layer DBR reflecting layer or the first insulating barrier, metallic reflector, the second insulating barrier.
Further, in metal electrode structure can also be deposited on the second insulating barrier.
Further, described DBR reflecting layer or the first thickness of insulating layer are 10-10000nm, and metallic reflector thickness is
1-1000nm, the second thickness of insulating layer are 10-10000nm, and metal electrode structure thickness is 1-10000nm.
Further, described DBR reflecting layer are that at least one of silica, titanium oxide and aluminum oxide composition are many
In the multi-layer compound structure of double-layer structure.
Further, the first described insulating barrier and the second insulating barrier are insulating layer of silicon oxide or silicon nitride dielectric layer.
Further, described metallic reflector is constructed of aluminium reflecting layer or silver metallic structure reflecting layer.
Further, described metallic reflector is using aluminum metal and the laminated construction of metal.
Further, described metal electrode structure is golden structure electrode or constructed of aluminium electrode.
It is in addition, the utility model further relates to the preparation method of LED flip chip, the step of the preparation method：Fallen in LED
The P-type conduction region of cartridge chip main body solder side and N-type conductive region and the luminescent layer in flip-chip main body non-solder face region
Surface grows DBR reflecting layer or the first insulating barrier, metallic reflector, redeposited second insulating barrier, by graphical treatment successively
Metal electrode structure is exposed, forms LED flip chip；Or it is the P-type conduction region of LED flip chip main body solder side
DBR reflecting layer or first exhausted are grown successively with the luminous layer surface of N-type conductive region and flip-chip main body non-solder face region
Edge layer, metallic reflector, redeposited second insulating barrier, layer of metal electrode structure is deposited again, forms LED flip chip.
Or the preparation method of the LED flip chip can also use following steps：It is that LED flip chip main body is welded
The luminous layer surface in the P-type conduction region in face and N-type conductive region and flip-chip main body non-solder face region passes sequentially through gas
Mutually deposition makes DBR reflecting layer or the first insulating barrier, evaporation or jet-plating metallization reflecting layer, redeposited second insulating barrier, by figure
Shapeization processing exposes metal electrode structure, forms LED flip chip；Or it is the p-type of LED flip chip main body solder side
The luminous layer surface in conductive region and N-type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition system
Make DBR reflecting layer or the first insulating barrier, evaporation or jet-plating metallization reflecting layer, redeposited second insulating barrier, by graphical treatment
Layer of metal electrode structure is deposited again afterwards, forms LED flip chip.
In summary, LED flip chip of the present utility model carries out omnidirectional reflection extraction light extraction using ODR structures, with
The flip chip structure of prior art is compared, LED flip chip of the present utility model it is non-to the non-solder face of chip and tradition go out
The P-type conduction region of the solder side of light and N-type conductive region produce light reflection, and energy is comprehensively and full angle produces reflecting light,
Luminous efficiency is higher, and conductive and heat-conductive effect is more preferable, at the same reflective metal layer and electrode layer can together with processing and fabricating, technique is simple
It is feasible.
Brief description of the drawings
Below in conjunction with the accompanying drawings, and by reference to following detailed description, the utility model will be better understood and understand it
Advantages and features, accompanying drawing is used to illustrate the utility model, and unrestricted the utility model；Representing the accompanying drawing of structure may not press
Ratio is drawn；Also, in accompanying drawing, same or similar element indicates same or similar label：
Fig. 1 is the schematic diagram of the ODR structures of the utility model embodiment 1 and the LED flip chip of example 3；
Fig. 2 is the schematic diagram of the ODR structures of the LED flip chip of the utility model embodiment 2；
Fig. 3 is the schematic diagram of the ODR structures of the LED flip chip of the utility model embodiment 4；
Fig. 4 is the schematic diagram of the ODR structures of the LED flip chip of the utility model embodiment 5；
Fig. 5 is the schematic diagram of the LED flip chip tradition dbr structure of prior art；
Fig. 6 is the schematic diagram of the conventional metals reflection layer structure of prior art.
Embodiment
Embodiment 1
A kind of LED flip chip described described in the present embodiment 1, including LED flip chip main body, in LED flip chip
The P-type conduction region of main body solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR knots
Structure, ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 1.ODR structures include luminescent layer 4 and on luminescent layer according to
The DBR reflecting layer 3 of secondary stacking, constructed of aluminium reflecting layer 2, silicon nitride dielectric layer 5.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, evaporation constructed of aluminium reflecting layer, then the silicon nitride dielectric layer that is vapor-deposited, expose constructed of aluminium electrode, shape by graphical treatment
Into LED flip chip.
Embodiment 2
A kind of LED flip chip described described in the present embodiment 2, including LED flip chip main body, in LED flip chip
The P-type conduction region of main body solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR knots
Structure, ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 2.ODR structures include luminescent layer 4 and on luminescent layer according to
The DBR reflecting layer 3 of secondary stacking, constructed of aluminium reflecting layer 2, the first insulating layer of silicon oxide 6.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, evaporation constructed of aluminium reflecting layer, redeposited insulating layer of silicon oxide, constructed of aluminium electrode is exposed by graphical treatment, forms LED
Flip-chip.
Embodiment 3
A kind of LED flip chip described described in the present embodiment 3, including LED flip chip main body, in LED flip chip
The P-type conduction region of main body solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR knots
Structure, ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 1.ODR structures include luminescent layer 4 and on luminescent layer according to
The DBR reflecting layer 3 of secondary stacking, constructed of aluminium reflecting layer 2, silicon nitride dielectric layer 5.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, sputter constructed of aluminium reflecting layer, redeposited silicon nitride dielectric layer, constructed of aluminium electrode is exposed by graphical treatment, forms LED
Flip-chip.
Embodiment 4
A kind of LED flip chip described by the present embodiment 4, including LED flip chip main body, in LED flip chip master
The P-type conduction region of body solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures,
ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 3.ODR structures include luminescent layer 4 and in heaps successively on luminescent layer
Folded DBR reflecting layer 3, constructed of aluminium reflecting layer 2, the first insulating layer of silicon oxide 6, golden structure electrode 1.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes DBR reflections
Layer, sputter constructed of aluminium reflecting layer, redeposited insulating layer of silicon oxide, the gold evaporation structure electrode again after graphical treatment, formed
LED flip chip.
Embodiment 5
A kind of LED flip chip described by the present embodiment 5, including LED flip chip main body, in LED flip chip master
The P-type conduction region of body solder side and N-type conductive region and flip-chip main body non-solder face region are all covered with ODR structures,
ODR structures extract light extraction using omnidirectional reflection, as shown in Figure 4.ODR structures include luminescent layer 4 and in heaps successively on luminescent layer
Folded the second insulating layer of silicon oxide 7, constructed of aluminium reflecting layer 2, the first insulating layer of silicon oxide 6.
The preparation method of above-mentioned LED flip chip is：In the P-type conduction region of LED flip chip main body solder side and N
The luminous layer surface in type conductive region and flip-chip main body non-solder face region passes sequentially through vapour deposition and makes the second oxidation
Silicon insulating barrier, evaporation constructed of aluminium reflecting layer, redeposited first insulating layer of silicon oxide, expose constructed of aluminium electricity by graphical treatment
Pole, form LED flip chip.
It is described above, only it is preferred embodiment of the present utility model, not structure of the present utility model is made any
Formal limitation.Every any simple modification made according to the technical essence of the utility model to above example, it is equal
Change and modification, in the range of still falling within the technical solution of the utility model.
Claims (8)
1. a kind of LED flip chip, including LED flip chip main body, it is characterised in that in LED flip chip main body solder side
P-type conduction region and N-type conductive region and flip-chip main body non-solder face region be all covered with ODR structures, ODR structures are adopted
Light extraction is extracted with omnidirectional reflection；Described ODR structures include luminescent layer and in the DBR reflecting layer stacked gradually on luminescent layer or
First insulating barrier, metallic reflector, the second insulating barrier.
2. a kind of LED flip chip according to claim 1, it is characterised in that in can be also deposited on the second insulating barrier
Metal electrode structure.
3. a kind of LED flip chip according to claim 2, it is characterised in that described DBR reflecting layer or the first insulation
Thickness degree is 10-10000nm, and metallic reflector thickness is 1-1000nm, and the second thickness of insulating layer is 10-10000nm, metal
Electrode structure thickness is 1-10000nm.
4. a kind of LED flip chip according to claim 2, it is characterised in that described DBR reflecting layer are titanium dioxide
Multi-layer compound structure of at least one of silicon, titanium oxide and aluminum oxide composition no less than double-layer structure.
A kind of 5. LED flip chip according to claim 2, it is characterised in that the first described insulating barrier and second exhausted
Edge layer is insulating layer of silicon oxide or silicon nitride dielectric layer.
6. a kind of LED flip chip according to claim 2, it is characterised in that described metallic reflector is constructed of aluminium
Reflecting layer or silver metallic structure reflecting layer.
7. a kind of LED flip chip according to claim 2, it is characterised in that described metallic reflector uses aluminium gold
The laminated construction of category and metal.
8. a kind of LED flip chip according to claim 2, it is characterised in that described metal electrode structure is tied for gold
Structure electrode or constructed of aluminium electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720502276.9U CN206961863U (en) | 2017-05-08 | 2017-05-08 | A kind of LED flip chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720502276.9U CN206961863U (en) | 2017-05-08 | 2017-05-08 | A kind of LED flip chip |
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| CN206961863U true CN206961863U (en) | 2018-02-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106997917A (en) * | 2017-05-08 | 2017-08-01 | 珠海市芯半导体科技有限公司 | A kind of LED flip chip and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106997917A (en) * | 2017-05-08 | 2017-08-01 | 珠海市芯半导体科技有限公司 | A kind of LED flip chip and preparation method thereof |
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