CN112510133A - Light emitting diode chip, light emitting diode and light emitting diode chip preparation method - Google Patents

Light emitting diode chip, light emitting diode and light emitting diode chip preparation method Download PDF

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Publication number
CN112510133A
CN112510133A CN201910871335.3A CN201910871335A CN112510133A CN 112510133 A CN112510133 A CN 112510133A CN 201910871335 A CN201910871335 A CN 201910871335A CN 112510133 A CN112510133 A CN 112510133A
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layer
sacrificial layer
emitting diode
sacrificial
reflective
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刘珊珊
纪思美
陈顺利
李士涛
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Elec Tech Photoelectric Technology Dalian Co ltd
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Elec Tech Photoelectric Technology Dalian Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The application relates to a light-emitting diode chip, a light-emitting diode and a light-emitting diode chip preparation method. The light emitting diode chip comprises a reflecting layer, a sacrificial layer, a substrate, an N semiconductor layer, a light emitting layer and a P semiconductor layer which are sequentially stacked. The sacrificial layer comprises a first sacrificial layer and a second sacrificial layer which are arranged in a laminated mode, the first sacrificial layer is arranged between the reflecting layer and the second sacrificial layer, the second sacrificial layer is arranged between the first sacrificial layer and the substrate, and the refractive index of the first sacrificial layer is larger than that of the second sacrificial layer. The application provides the luminance of emitting diode chip is higher.

Description

Light emitting diode chip, light emitting diode and light emitting diode chip preparation method
Technical Field
The present disclosure relates to the field of light emitting diodes, and particularly to a light emitting diode chip, a light emitting diode, and a method for manufacturing the light emitting diode chip.
Background
A Light Emitting Diode (LED) is a semiconductor device capable of converting electrical energy into Light energy, has the characteristics of energy saving, environmental protection, long service life, small size and the like, and is widely applied to the fields of backlight, illumination, panels and the like. In most applications, the LED chip only needs to have a 180 ° light emitting surface. In order to improve the light emitting efficiency of the light emitting diode, a reflective layer is generally prepared on the back surface of the LED chip. The reflective layer generally uses metal, bragg reflector, or the superposition of both to achieve the purpose of high reflectivity.
In the conventional technology, an N semiconductor layer, a light emitting layer and a P semiconductor layer are sequentially formed on a surface of a substrate, and then a reflective layer is formed on a surface of the substrate away from the N semiconductor layer.
However, such LED chips have a problem of low luminance.
Disclosure of Invention
In view of the above, it is necessary to provide a light emitting diode chip, a light emitting diode and a method for manufacturing the light emitting diode chip.
A light emitting diode chip comprises a reflecting layer, a substrate, an N semiconductor layer, a light emitting layer and a P semiconductor layer which are sequentially stacked;
the light emitting diode chip further comprises a sacrificial layer, the sacrificial layer comprises a first sacrificial layer and a second sacrificial layer which are arranged in a laminated mode, the first sacrificial layer is arranged between the reflecting layer and the second sacrificial layer, the second sacrificial layer is arranged between the first sacrificial layer and the substrate, and the refractive index of the first sacrificial layer is larger than that of the second sacrificial layer.
In one embodiment, the thickness of the first sacrificial layer is 50nm-100nm, and the thickness of the second sacrificial layer is 50nm-500 nm.
In one embodiment, the thickness of the first sacrificial layer is 75nm, and the thickness of the second sacrificial layer is 100 nm.
In one embodiment, the reflective layer comprises a bragg mirror.
In one embodiment, the reflective layer includes a plurality of first reflective layers and a plurality of second reflective layers alternately stacked, the refractive index of the first reflective layers is greater than that of the second reflective layers, the material of the first sacrificial layers is the same as that of the first reflective layers, and the material of the second sacrificial layers is the same as that of the second reflective layers.
In one embodiment, the material of the first reflective layer is TiO2The material of the second reflecting layer is SiO2The material of the first sacrificial layer is TiO2The material of the second sacrificial layer is SiO2。
A light emitting diode comprising a light emitting diode chip as described above.
The light emitting diode chip and the light emitting diode provided by the embodiment of the application comprise sacrificial layers, wherein the sacrificial layers are formed by stacking two film layers with larger refractive index difference. The sacrificial layer is additionally arranged between the reflecting layer and the substrate, so that the roughness of the surface of the substrate can be reduced, the reflecting capacity of the reflecting layer can be improved, the brightness of the light-emitting diode chip can be improved, the stress of the reflecting layer can be released by the sacrificial layer, the hygroscopicity is low, and the problem that the film layer falls off can be avoided. Meanwhile, in the embodiment, the sacrificial layer and the reflecting layer are made of the same material and can be prepared simultaneously by the same preparation method, so that the preparation time can be reduced, and the maintenance is convenient.
A preparation method of a light-emitting diode chip comprises the following steps:
providing a substrate, wherein the substrate comprises a substrate, an N semiconductor layer, a light emitting layer and a P semiconductor layer which are sequentially stacked;
depositing and forming a second sacrificial layer on the surface of the substrate far away from the N semiconductor layer;
depositing a first sacrificial layer on the surface of the second sacrificial layer far away from the substrate, wherein the refractive index of the first sacrificial layer is larger than that of the second sacrificial layer;
and depositing a reflecting layer on the surface of the first sacrificial layer far away from the second sacrificial layer.
In one embodiment, the first sacrificial layer, the second sacrificial layer and the reflective layer are deposited by ion-assisted evaporation.
In one embodiment, the thickness of the first sacrificial layer is 50nm-100nm, and the thickness of the second sacrificial layer is 50nm-500 nm.
According to the preparation method of the light-emitting diode chip, the second sacrificial layer is formed on the surface, far away from the N semiconductor layer, of the substrate in a deposition mode. And depositing a first sacrificial layer on the surface of the second sacrificial layer far away from the substrate. And depositing a reflecting layer on the surface of the first sacrificial layer far away from the second sacrificial layer. In the embodiment of the present application, the first sacrificial layer and the second sacrificial layer are collectively referred to as a sacrificial layer, and the reflective layer and the sacrificial layer are made of the same material and have the same physical properties, and can be simultaneously made by the same manufacturing method, which can reduce the manufacturing time and facilitate maintenance. Meanwhile, the prepared sacrificial layer can reduce the roughness of the surface of the substrate, so that the reflection capability of the reflection layer can be improved, the brightness of the light-emitting diode chip can be improved, the stress of the reflection layer can be released by the sacrificial layer, the hygroscopicity is low, and the problem that the film layer falls off can be avoided.
Drawings
Fig. 1 is a schematic view of a light emitting diode chip according to an embodiment of the present disclosure;
fig. 2 is a schematic view of a light emitting diode chip according to an embodiment of the present disclosure;
FIG. 3 is a schematic cross-sectional view of a reflective layer according to an embodiment of the present disclosure;
fig. 4 is a schematic flow chart of a method for manufacturing a light emitting diode chip according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a substrate according to an embodiment of the present disclosure;
FIG. 6 is a schematic structural diagram of a second sacrificial layer deposited on a surface of the substrate away from the N semiconductor layer according to an embodiment of the present disclosure;
FIG. 7 is a schematic structural diagram of a first sacrificial layer deposited on a surface of a second sacrificial layer away from a substrate according to an embodiment of the present disclosure;
FIG. 8 is a schematic structural diagram of a reflective layer deposited on a surface of a first sacrificial layer away from a second sacrificial layer according to an embodiment of the present disclosure;
fig. 9 is a schematic flow chart of a method for manufacturing a light emitting diode chip according to an embodiment of the present application;
fig. 10 is a schematic structural view illustrating the fabrication of a current blocking layer over a P semiconductor layer according to an embodiment of the present application;
fig. 11 is a schematic structural diagram illustrating a current spreading layer formed over a P-semiconductor layer according to an embodiment of the present disclosure;
FIG. 12 is a schematic structural diagram of a P electrode and an N electrode fabricated according to one embodiment of the present application;
fig. 13 is a schematic diagram illustrating a comparison of the reflectivity of the reflective layer of the conventional design provided in the present application and the reflectivity of the reflective layer of the led chip provided in the present application in the visible wavelength range.
Description of reference numerals:
10. light emitting diode chip
20. Substrate
100. Reflective layer
110. A first reflective layer
120. Second reflecting layer
200. Sacrificial layer
210. First sacrificial layer
220. Second sacrificial layer
300. Substrate
400. N semiconductor layer
410. Step
500. Luminescent layer
600. P semiconductor layer
700. Current blocking layer
800. Current spreading layer
900. Electrode for electrochemical cell
910. P electrode
920. N electrode
Detailed Description
In order to make the purpose, technical solution and advantages of the present application more clearly understood, the following embodiments are taken in conjunction with the accompanying drawings to further describe the light emitting diode chip, the light emitting diode and the method for manufacturing the light emitting diode chip in detail. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1, an embodiment of the present application provides a light emitting diode chip 10, where the light emitting diode chip 10 includes a reflective layer 100, a sacrificial layer 200, a substrate 300, an N semiconductor layer 400, a light emitting layer 500, and a P semiconductor layer 600, which are stacked in sequence from bottom to top.
The material of the substrate 300 may be sapphire, silicon carbide, or the like. The N semiconductor layer 400 may be an N-type GaN layer. The P-type semiconductor layer 600 may be a P-type GaN layer.
The sacrificial layer 200 includes a first sacrificial layer 210 and a second sacrificial layer 220 stacked. The first sacrificial layer 210 is disposed between the reflective layer 100 and the second sacrificial layer 220, and the second sacrificial layer 220 is disposed between the first sacrificial layer 210 and the substrate 300. That is, the light emitting diode chip 10 includes the reflective layer 100, the first sacrificial layer 210, the second sacrificial layer 220, the substrate 300, the N semiconductor layer 400, the light emitting layer 500, and the P semiconductor layer 600, which are sequentially stacked from bottom to top. The first sacrificial layer 210 and the second sacrificial layer 220 are disposed between the reflective layer 100 and the substrate 300, and the refractive index of the first sacrificial layer 210 is greater than the refractive index of the second sacrificial layer 220. The sacrificial layer 200 is used to reduce the roughness of the surface of the substrate 300 and balance the stress of the substrate 300 and the reflective layer 100. The specific material, thickness, preparation method, and the like of the first sacrificial layer 210 and the second sacrificial layer 220 may be selected according to actual requirements.
In this embodiment, the sacrificial layer 200 is disposed between the reflective layer 100 and the substrate 300. The sacrificial layer 200 has a certain thickness, so that the roughness of the surface of the substrate 300 can be reduced, that is, the reflective layer 100 can have a relatively flat reflective interface, and thus, the reflective capability of the reflective layer 100 can be effectively exerted through the cooperation between the reflective layer 100 and the sacrificial layer 200, so that the brightness of the light emitting diode chip 10 can be improved. The embodiment of the present application provides that the light emitting diode chip 10 not only considers the reflectivity of the reflective layer 100, but also considers the cooperation between the substrate 300 and the reflective layer 100, so as to better exert the reflective capability of the reflective layer 100. Meanwhile, because the stress of the film layer with a high refractive index is greater than that of the film layer with a low refractive index, and the refractive indexes of the first sacrificial layer 210 and the second sacrificial layer 220 are different, the first sacrificial layer 210 and the second sacrificial layer 220 can be used as stress transition layers between the reflective layer 100 and the substrate 300, so that the stress between the reflective layer 100 and the substrate 300 can be balanced, and the problem of film layer falling off is avoided.
Referring to fig. 2, the light emitting diode chip 10 further includes a current blocking layer 700 and a current spreading layer 800, and both the current blocking layer 700 and the current spreading layer 800 are disposed on a surface of the P-semiconductor layer 600 away from the light emitting layer 500. The current blocking layer 700 is disposed between the P semiconductor layer 600 and the current spreading layer 800. The material of the current blocking layer 700 may include SiO2、Si3N4Or TiO2And one or more of the insulating materials, and is deposited by PECVD (Plasma Enhanced Chemical vapor deposition) or evaporation. The material of the current spreading layer 800 may include a Ni/Au composite film layer, a doped metal oxide, such as indium tin oxide, Ga doped ZnO2And the like.
With continued reference to fig. 2, the led chip 10 further includes an electrode 900 and a step 410, wherein the electrode 900 includes a P electrode 910 and an N electrode 920. The P-electrode 910 is disposed on the current spreading layer 800, and the P-electrode 910 is electrically connected to the P-semiconductor layer 600 through the current spreading layer 800 and the current blocking layer 700 in sequence. The step 410 extends from the P semiconductor layer 600 to the N semiconductor layer 400, the N electrode 920 is disposed on the step 410, and the N electrode 920 is electrically connected to the N semiconductor layer 400. A portion of the P-type semiconductor layer 600 and a portion of the light emitting layer 500 may be etched by dry etching or the like to expose a portion of the N-type semiconductor layer 400, thereby forming the step 410. The P electrode 910 and the N electrode 920 may have a Ni/Al/Cr/Au structure or a Ti/Al/Ni/Au structure.
In one embodiment, the first sacrificial layer 210 has a thickness between 50nm and 100nm, and the second sacrificial layer 220 has a thickness between 50nm and 500 nm. The thickness of the second sacrificial layer 220 cannot be too small nor too large. If the thickness of the second sacrificial layer 220 is too small, the roughness of the substrate 300 is not sufficiently reduced, and the reflective capability of the reflective layer 100 cannot be effectively exerted. If the thickness of the second sacrificial layer 220 is too large, the stress mismatch between the reflective layer 100, the sacrificial layer 200 and the substrate 300 may cause a film peeling problem. Since the material of the first sacrificial layer 210 is generally a light absorbing material, the thickness of the first sacrificial layer 210 is small, and the first sacrificial layer will not absorb too much light and will not affect the reflection capability of the reflective layer 100, so that the brightness of the led chip 10 can be prevented from being reduced.
In one embodiment, the thickness of the first sacrificial layer 210 is 75nm and the thickness of the second sacrificial layer 220 is 100 nm. In this embodiment, the thickness of the second sacrificial layer 220 is moderate, so that the stress among the reflective layer 100, the sacrificial layer 200, and the substrate 300 can be better balanced, and the problem of film peeling can be avoided. The first sacrificial layer 210 has a small thickness, does not absorb too much light, and does not affect the reflective ability of the reflective layer 100, so that the brightness of the led chip 10 can be prevented from being reduced.
In one embodiment, the reflective layer 100 is a bragg mirror. The Bragg reflector may be made of SiO2、Si3N4、TiO2、Al2O3、Nb2O5、MgF2And the like. The bragg mirrors are typically made of two or three materials with widely differing refractive indices. The bragg mirror may be formed by ion assisted evaporation or the like.
In another embodiment, the reflective layer 100 may be a stack of a bragg mirror and a metal. The reflection performance of the reflective layer 100 is improved by the superposition of the bragg mirror and the metal.
Referring to fig. 3, in one embodiment, the reflective layer 100 includes a plurality of first reflective layers 110 and a plurality of second reflective layers 120 alternately stacked. That is, the reflective layer 100 is composed of one layer of the first reflective layer 110, one layer of the second reflective layer 120, one layer of the first reflective layer 110, and one layer of the second reflective layer 120 … …. The refractive index of the first reflective layer 110 is greater than the refractive index of the second reflective layer 120. The refractive indexes of the first reflective layer 110 and the second reflective layer 120 are higher or lower to improve the reflective performance of the reflective layer 100.
The number of the alternate stacking layers of the first reflective layer 110 and the second reflective layer 120 may be variously selected. In one embodiment, the thickness of the reflective layer 100 is between 1um and 4um, so that the reflective layer 100 can obtain a larger reflective power as long as the thickness of the multi-layer overlapping of the first reflective layer 110 and the second reflective layer 120 is between 1um and 4 um. Therefore, the light emitting effect of the light emitting diode chip 10 can be improved, so that the light emitting diode chip 10 has higher brightness. In a specific embodiment, the reflective layer 100 has a thickness of 2.4 um.
In one embodiment, the material of the first sacrificial layer 210 is the same as the material of the first reflective layer 110, and the material of the second sacrificial layer 220 is the same as the material of the second reflective layer 120. Thus, when the light emitting diode chip 10 is manufactured, the reflective layer 100 and the sacrificial layer 200 may be manufactured by the same method, which simplifies the manufacturing process, reduces the manufacturing time, and facilitates maintenance.
In one embodiment, the material of the first reflective layer 110 is TiO2The material of the second reflective layer 120 is SiO2The material of the first sacrificial layer 210 is TiO2The material of the second sacrificial layer 220 is SiO2. Wherein, SiO2Has a lower refractive index, TiO2The refractive index of (3) is higher. The stress of the film layer with high refractive index is larger than that of the film layer with low refractive index, the sacrificial layer 200 added between the reflecting layer 100 and the substrate 300 can be used as a stress transition layer, the stress between the substrate 300 and the reflecting layer 100 can be balanced, and the problem of film layer falling off is avoided. In addition, TiO2And SiO2The water absorption is low, and the problem of falling off of the film layer can be avoided.
An embodiment of the present application provides a light emitting diode including the light emitting diode chip 10 as described above. The led includes the led chip 10, and therefore has all the structures and advantages of the led chip 10, which are not described herein again.
Referring to fig. 4 to 8, an embodiment of the present application further provides a method for manufacturing a light emitting diode chip, where the method includes:
s10, providing a substrate 20, wherein the substrate 20 includes a substrate 300, an N semiconductor layer 400, a light emitting layer 500, and a P semiconductor layer 600 stacked in sequence;
s20, depositing a second sacrificial layer 220 on the surface of the substrate 300 away from the N semiconductor layer 400;
s30, depositing a first sacrificial layer 210 on the surface of the second sacrificial layer 220 away from the substrate 300, wherein the refractive index of the first sacrificial layer 210 is greater than that of the second sacrificial layer 220;
s40, depositing a reflective layer 100 on the surface of the first sacrificial layer 210 away from the second sacrificial layer 220.
In this embodiment, the substrate 20 is provided first, and the second sacrificial layer 220, the first sacrificial layer 210 and the reflective layer 100 are prepared under the substrate 300 of the substrate 20. The first sacrificial layer 210 and the second sacrificial layer 220 are collectively referred to as a sacrificial layer 200. The preparation methods of the first sacrificial layer 210, the second sacrificial layer 220 and the reflective layer 100 can be selected according to actual needs, and are not limited in this embodiment. Wherein the refractive index of the first sacrificial layer 210 is greater than the refractive index of the second sacrificial layer 220. If the stress of the film layer with a high refractive index is greater than the stress of the film layer with a low refractive index, the refractive indexes of the first sacrificial layer 210 and the second sacrificial layer 220 are different, so that the first sacrificial layer 210 and the second sacrificial layer 220 can be used as a stress transition layer between the reflective layer 100 and the substrate 300, the stress between the reflective layer 100 and the substrate 300 can be balanced, and the problem of film layer falling off can be avoided. Meanwhile, the prepared sacrificial layer 200 is arranged between the substrate 300 and the reflective layer 100, and the sacrificial layer 200 can reduce the roughness of the surface of the substrate 300, and can effectively exert the reflective capability of the reflective layer 100, so that the prepared light-emitting diode chip 10 has higher brightness.
In one embodiment, the first sacrificial layer 210, the second sacrificial layer 220 and the reflective layer 100 are deposited by ion evaporation. In this embodiment, when the light emitting diode chip 10 is manufactured, the first sacrificial layer 210, the second sacrificial layer 220 and the reflective layer 100 are manufactured by the same method, so that the manufacturing process is simplified, the manufacturing time is reduced, and the maintenance is facilitated.
In one embodiment, the thickness of the first sacrificial layer 210 is 50nm to 100nm, and the thickness of the second sacrificial layer 220 is 50nm to 500 nm.
In the embodiment, in the preparation of the sacrificial layer 200, the thickness of the first sacrificial layer 210 is between 50nm and 100nm, and the thickness of the second sacrificial layer 220 is between 50nm and 500 nm. The thicknesses of the first sacrificial layer 210 and the second sacrificial layer 220 deposited cannot be too large or too small. If the thickness of the second sacrificial layer 220 is too small, the roughness of the substrate 300 is not sufficiently reduced, and the reflective capability of the reflective layer 100 cannot be effectively exerted. If the thickness of the second sacrificial layer 220 is too large, the stress mismatch of the reflective layer 100, the sacrificial layer 200 and the substrate 300 may be caused, which may cause the problem of film peeling. In general, the material selected when the first sacrificial layer 210 is deposited has a problem of absorbing light, and the thickness of the deposited first sacrificial layer 210 cannot be too large, otherwise most of the light is absorbed, which affects the reflective capability of the reflective layer 100, and thus the brightness of the led chip 10 is reduced.
Referring to fig. 9 to 12, in an embodiment, the method further includes:
s50, preparing a current blocking layer 700 over the P semiconductor layer 600.
In this embodiment, the current blocking layer 700 is deposited by PECVD, or the current blocking layer 700 may be deposited by evaporation.
S60, a current spreading layer 800 is prepared over the P semiconductor layer 600.
In this embodiment, the current spreading layer 800 is deposited by conventional methods, such as evaporation, sputtering, etc.
S70, a P electrode 910 and an N electrode 920 are prepared.
In this embodiment, conventional means are employed, such as: the P-electrode 910 is prepared above the current spreading layer by evaporation, sputtering, chemical plating, and the like. A dry etching method may be used to etch away a portion of the P semiconductor layer 600 and a portion of the light emitting layer 500, exposing a portion of the N semiconductor layer 400, and forming a step 410. On the step 410, in a conventional manner, for example: the N electrode 920 is prepared by evaporation, sputtering, chemical plating, and the like.
The comparison of the reflectivity of the reflective layer 100 of the conventional design and the reflective layer 100 of the led chip 10 prepared in the embodiment of the present application in the visible wavelength range is shown in fig. 13. As can be seen from the figure, the reflectivity of the reflective layer 100 can reach more than 95% when the visible light wavelength is about 420nm-730nm, and the reflectivity of the reflective layer 100 of the led chip 10 prepared in the embodiment of the present application is higher than that of the reflective layer 100 of the conventional design when the visible light wavelength is about 730nm-800 nm.
In another embodiment, the reflective layer 100 is deposited at a wavelength of about 420nm to 730nm, and the reflectivity of the reflective layer 100 can reach more than 95%. And the material used for depositing the emissive layer 100 is in turn TiO2Layer and SiO2The material of the layer, i.e. the first reflective layer 110, is TiO2The material of the second reflective layer 120 is SiO2. The deposition thickness of the reflective layer 100 is 2.4um, that is, the total thickness of the first reflective layer 110 and the second reflective layer 120 is 2.4 um. The material used for depositing the first sacrificial layer 210 is TiO2The first sacrificial layer 210 is deposited to a thickness of 75 nm. The material used for depositing the second sacrificial layer 220 is SiO2The second sacrificial layer 220 is deposited to a thickness of 100 nm. The preparation method provided by the embodiment can avoid the problem of film fallingMoreover, the reflection capability of the reflection layer 100 can be effectively exerted, and the light emission of the light emitting diode chip 10 is increased, so that the brightness of the light emitting diode chip 10 is improved by 2%.
Only some embodiments of the method for manufacturing the light emitting diode chip are described above, and the structures of other portions may refer to the embodiment of the structure of the light emitting diode chip 10, which is not described herein again.
It should be understood that, although the steps in the flowcharts in the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in the figures may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performance of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least some of the sub-steps or stages of other steps.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A light emitting diode chip, comprising:
the light-emitting diode comprises a reflecting layer (100), a substrate (300), an N semiconductor layer (400), a light-emitting layer (500) and a P semiconductor layer (600) which are sequentially stacked;
the light emitting diode chip further comprises a sacrificial layer (200), wherein the sacrificial layer (200) comprises a first sacrificial layer (210) and a second sacrificial layer (220) which are arranged in a stacked mode, the first sacrificial layer (210) is arranged between the reflecting layer (100) and the second sacrificial layer (220), the second sacrificial layer (220) is arranged between the first sacrificial layer (210) and the substrate (300), and the refractive index of the first sacrificial layer (210) is larger than that of the second sacrificial layer (220).
2. The light-emitting diode chip as claimed in claim 1, wherein the thickness of the first sacrificial layer (210) is 50nm to 100nm, and the thickness of the second sacrificial layer (220) is 50nm to 500 nm.
3. The light-emitting diode chip as claimed in claim 1, characterized in that the thickness of the first sacrificial layer (210) is 75nm and the thickness of the second sacrificial layer (220) is 100 nm.
4. The light-emitting diode chip as claimed in claim 1, characterized in that the reflective layer (100) comprises a bragg mirror.
5. The light emitting diode chip as claimed in claim 4, wherein said reflective layer (100) comprises a plurality of first reflective layers (110) and second reflective layers (120) alternately stacked, said first reflective layers (110) having a refractive index greater than that of said second reflective layers (120), said first sacrificial layers (210) being made of the same material as said first reflective layers (110), said second sacrificial layers (220) being made of the same material as said second reflective layers (120).
6. The light-emitting diode chip as claimed in claim 5, characterized in that the material of the first reflective layer (110) is TiO2Said second reflective layer(120) Is made of SiO2The material of the first sacrificial layer (210) is TiO2The material of the second sacrificial layer (220) is SiO2。
7. Light-emitting diode, characterized in that it comprises a light-emitting diode chip (10) as claimed in any of claims 1 to 6.
8. A method for preparing a light-emitting diode chip is characterized by comprising the following steps:
providing a substrate (20), wherein the substrate (20) comprises a substrate (300), an N semiconductor layer (400), a light-emitting layer (500) and a P semiconductor layer (600) which are sequentially stacked;
depositing a second sacrificial layer (220) on the surface of the substrate (300) far away from the N semiconductor layer (400);
depositing a first sacrificial layer (210) on the surface of the second sacrificial layer (220) far away from the substrate (300), wherein the refractive index of the first sacrificial layer (210) is larger than that of the second sacrificial layer (220);
and depositing a reflecting layer (100) on the surface of the first sacrificial layer (210) far away from the second sacrificial layer (220).
9. The method according to claim 8, wherein the first sacrificial layer (210), the second sacrificial layer (220) and the reflective layer (100) are deposited by ion assisted evaporation.
10. The method of claim 8, wherein the first sacrificial layer (210) has a thickness of 50nm to 100nm and the second sacrificial layer (220) has a thickness of 50nm to 500 nm.
CN201910871335.3A 2019-09-16 2019-09-16 Light emitting diode chip, light emitting diode and light emitting diode chip preparation method Pending CN112510133A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038876A (en) * 2021-08-09 2022-02-11 重庆康佳光电技术研究院有限公司 Manufacturing method of light-emitting chip, light-emitting chip and light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038876A (en) * 2021-08-09 2022-02-11 重庆康佳光电技术研究院有限公司 Manufacturing method of light-emitting chip, light-emitting chip and light-emitting device

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